CN102201538A - Substrate for flexible photoelectronic device and preparation method thereof - Google Patents
Substrate for flexible photoelectronic device and preparation method thereof Download PDFInfo
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- CN102201538A CN102201538A CN 201110096846 CN201110096846A CN102201538A CN 102201538 A CN102201538 A CN 102201538A CN 201110096846 CN201110096846 CN 201110096846 CN 201110096846 A CN201110096846 A CN 201110096846A CN 102201538 A CN102201538 A CN 102201538A
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Abstract
The invention discloses a substrate for a flexible photoelectronic device, which comprises a flexible substrate and a conductive layer, and is characterized in that: the flexible substrate and the conductive layer are formed in one of the following two modes: 1, the flexible substrate is made of a transparent dielectric polymer material, the conductive layer is a silver nanowire film, and graphene is filled in a gap of the silver nanowire film; and 2, the flexible substrate is made of a transparent dielectric polymer material doped with the graphene, the conductive layer is the silver nanowire film, and the transparent dielectric polymer material doped with the graphene is filled in the gap of the silver nanowire film. By the substrate, the problems of high roughness of the silver nanowire film and low bonding force between the silver nanowire film and the flexible substrate are solved, the electrical conductivity and surface smoothness of the silver nanowire film are improved, and the bonding force between the silver nanowire film and the flexible substrate is improved.
Description
Technical field
The present invention relates to the organic optoelectronic technical field, be specifically related to a kind of base board for flexible optoelectronic part and preparation method thereof.
Background technology
Photoelectron technology is the very high industry of scientific and technological content that develops rapidly after microelectric technique.Along with the fast development of photoelectron technology, photoelectron products such as solar cell, optical image transducer, flat-panel screens, thin-film transistor are all full-fledged gradually, and they have improved people's life greatly.Simultaneously, opto-electronic information technology has also been created growing great market in the extensive use of social life every field.Developed country all the optoelectronic information industry as one of field of giving priority to, the competition of the field of opto-electronic information just launches at world wide.
Organic optoelectronic device mostly is that preparation is at rigid substrates (on glass or silicon chip), though they have good device performance, anti-vibration at present, shock proof ability a little less than, weight is heavier relatively, and it is very not convenient to carry, and is very restricted in the application of some occasion.People begin to attempt to be deposited on organic optoelectronic device on the flexible base, board rather than on the rigid substrates.
With flexible base, board replace the benefit of rigid substrates be product lighter, be difficult for broken, institute takes up space little and be more convenient for carrying.But, although these advantages are arranged, replace rigid substrates also to have many restrictions with flexible base, board, the preparation of flexible device still has many underlying issues to need to solve.For flexible substrate, because the profile pattern of flexible substrate is far away from rigid substrate, to handle equipment and the technology difficulty of wanting special bigger and flexible substrate is carried out surface smoothing, improved substrate production cost; The water of flexible substrate, oxygen permeability be much larger than rigid substrate, causes opto-electronic device to be subjected to the influence of the water oxygen that sees through from substrate, reduced the performance of device.
For electrode layer, conventional electrode layer material In
2O
3: SnO
2(ITO) there is following shortcoming in the electrode as flexible base, board: the indium among (1) ITO has severe toxicity, and is harmful in preparation and application; (2) In among the ITO
2O
3Cost an arm and a leg, cost is higher; (3) ito thin film is vulnerable to the reduction of hydrogen plasma, and effect reduces, and this phenomenon also can take place under low temperature, low plasma density; (4) phenomenon that conductivity descends can appear because of the bending of flexible substrate in the ito thin film on flexible substrate; (5) adopt thick ITO layer can reduce light transmittance, the light of 50-80% sponges at glass, ITO and organic layer, adopts thin ITO layer process difficulty bigger.In recent years, because the nano silver wire film has the electrode material that higher conductivity and visible light transmissivity have become potential replaced ITO, but there is the shortcoming of adhesion difference between surface roughness big and nano silver wire film and the flexible substrate in the nano silver wire film, has reduced the performance based on the opto-electronic device of nano silver wire membrane electrode.
Therefore, if can solve above-mentioned these problems, will make opto-electronic device obtain using more widely and development more fast.
Summary of the invention
Problem to be solved by this invention is: how a kind of base board for flexible optoelectronic part and preparation method thereof is provided, this substrate has solved the problem of adhesion difference between nano silver wire film roughness big and nano silver wire film and the flexible substrate, has improved adhesion between the evenness of nano silver wire film surface and nano silver wire film and the flexible substrate.
Technical problem proposed by the invention is to solve like this: a kind of base board for flexible optoelectronic part is provided, comprise flexible substrate and conductive layer, it is characterized in that, described flexible substrate and conductive layer are made of a kind of in the following dual mode: 1. described flexible substrate is transparent dielectricity polymeric material, described conductive layer is the nano silver wire film, is filled with Graphene in the space of described nano silver wire film; 2. described flexible substrate is the transparent dielectricity polymeric material of doped graphene, and described conductive layer is the nano silver wire film, is filled with the transparent dielectricity polymeric material of doped graphene in the space of described nano silver wire film.
According to base board for flexible optoelectronic part provided by the present invention, it is characterized in that, be less than or equal to 40% at the doping mass ratio of 2. planting Graphene in the structure.
According to base board for flexible optoelectronic part provided by the present invention, it is characterized in that described transparent dielectricity polymeric material comprises polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin polyacrylic acid, PAEK, Kynoar, polyester, PEN, polyacrylate, poly-paraphenylene terephthalamide's trimethyl hexamethylene diamine, polybutene or polyvinyl alcohol.
A kind of preparation method of base board for flexible optoelectronic part is characterized in that, may further comprise the steps:
1. the rigid substrates (as glass or silicon chip) of surface roughness less than 1nm cleaned, clean the back and dry up with drying nitrogen;
2. take the mode of spin coating or spraying or self assembly or inkjet printing or silk screen printing on the substrate of cleaning, to prepare the nano silver wire film;
3. on the nano silver wire film spin coating or the spraying doped graphene transparent dielectricity polymer material layer, or first spin coating or drip the solution be coated with or spray graphitiferous alkene, spin coating or spray transparent dielectricity polymer material layer again, described transparent dielectricity polymeric material comprise polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin polyacrylic acid, PAEK, Kynoar, polyester, PEN, polyacrylate, poly-paraphenylene terephthalamide's trimethyl hexamethylene diamine, polybutene and polyvinyl alcohol;
4. hot curing being carried out on the rigid substrates surface handles;
5. the transparent dielectricity polymer material layer after nano silver wire film and the curing or the transparent dielectricity polymer material layer of doped graphene are peeled off the rigid substrates surface, form the compliant conductive substrate;
6. test the parameters of transmitance, conductivity and the surface topography of compliant conductive substrate.
Beneficial effect of the present invention: conductive layer of the present invention prepares on the little rigid substrates of roughness, be filled with the transparent dielectricity polymeric material of Graphene or doped graphene in the conductive layer space, with conductive layer from the rigid substrates sur-face peeling, form the conductive layer of flexible base, board, not only improve the evenness of conductive layer surface, and increased the conductivity of conductive layer; Transparent dielectricity polymeric material in the flexible substrate of the present invention has the characteristics of high visible light transmissivity, has improved the visible light transmissivity of flexible base, board; The mode that adopts elder generation's preparation conductive layer to prepare flexible substrate again forms flexible base, board, has increased the adhesion between conductive layer and flexible substrate.
Description of drawings
Fig. 1 is the structural representation of the base board for flexible optoelectronic part of embodiment of the invention 1-10;
Fig. 2 is the visible light transmissivity of the substrate in the embodiment of the invention 1.
Wherein, 1, flexible substrate, 2, conductive layer.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described:
Technical scheme of the present invention provides a kind of base board for flexible optoelectronic part, and as shown in Figure 1, the structure of device comprises flexible substrate 1, conductive layer 2.
Below be specific embodiments of the invention:
Board structure as shown in Figure 1, flexible substrate 1 adopts polyethylene, and conductive layer 2 adopts the nano silver wire films, fills Graphene in the space of described nano silver wire film.
The preparation method is as follows:
1. the silicon substrate of surface roughness less than 1nm cleaned, clean the back and dry up with drying nitrogen;
2. nano silver wire is dispersed in the solvent, takes the spin coating mode to prepare the nano silver wire film on the silicon substrate of cleaning, rotating speed is 4000 revolutions per seconds during spin coating, duration 60 seconds, and thickness is about 80 nanometers;
3. the solution of spraying graphitiferous alkene on the nano silver wire film is placed silicon substrate 30 minutes in 80 ℃ environment, removes solvent remaining in the nano silver wire film, again spraying polyethylene on the nano silver wire film;
4. hot curing being carried out on the silicon substrate surface handles;
5. the polyethylene layer after nano silver wire film and the curing is peeled off the silicon substrate surface, form the compliant conductive substrate;
6. test the parameters of transmitance, conductivity and the surface topography of compliant conductive substrate.
Board structure as shown in Figure 1, flexible substrate 1 adopts polyimides, and conductive layer 2 adopts the nano silver wire films, fills Graphene in the space of described nano silver wire film.
The preparation method is as follows:
1. the silicon substrate of surface roughness less than 1nm cleaned, clean the back and dry up with drying nitrogen;
2. nano silver wire is dispersed in the solvent, takes spraying method on the silicon substrate of cleaning, to prepare the nano silver wire film;
3. the solution of spraying graphitiferous alkene on the nano silver wire film is placed silicon substrate 30 minutes in 80 ℃ environment, removes solvent remaining in the nano silver wire film, sprays polyimides again on the nano silver wire film;
4. hot curing being carried out on the silicon substrate surface handles;
5. the polyimide layer after nano silver wire film and the curing is peeled off the silicon substrate surface, form the compliant conductive substrate;
6. test the parameters of transmitance, conductivity and the surface topography of compliant conductive substrate.
Embodiment 3
Board structure as shown in Figure 1, flexible substrate 1 adopts polyester, and conductive layer 2 adopts the nano silver wire films, fills Graphene in the space of described nano silver wire film.
The preparation method is as follows:
1. the silicon substrate of surface roughness less than 1nm cleaned, clean the back and dry up with drying nitrogen;
2. nano silver wire is dispersed in the solvent, takes the mode of inkjet printing on the silicon substrate of cleaning, to prepare the nano silver wire film;
3. the solution of spraying graphitiferous alkene on the nano silver wire film is placed silicon substrate 30 minutes in 80 ℃ environment, removes solvent remaining in the nano silver wire film, sprays polyester again on the nano silver wire film;
4. hot curing being carried out on the silicon substrate surface handles;
5. the polyester after nano silver wire film and the curing is peeled off the silicon substrate surface, form the compliant conductive substrate;
6. test the parameters of transmitance, conductivity and the surface topography of compliant conductive substrate.
Embodiment 4
Board structure as shown in Figure 1, flexible substrate 1 adopts polybutene, and conductive layer 2 adopts the nano silver wire films, fills Graphene in the space of described nano silver wire film.
The preparation method is as follows:
1. the silicon substrate of surface roughness less than 1nm cleaned, clean the back and dry up with drying nitrogen;
2. nano silver wire is dispersed in the solvent, takes the mode of silk screen printing on the silicon substrate of cleaning, to prepare the nano silver wire film;
3. the solution of spraying graphitiferous alkene on the nano silver wire film is placed silicon substrate 30 minutes in 80 ℃ environment, removes solvent remaining in the nano silver wire film, sprays polybutene again on the nano silver wire film;
4. hot curing being carried out on the silicon substrate surface handles;
5. the polybutene after nano silver wire film and the curing is peeled off the silicon substrate surface, form the compliant conductive substrate;
6. test the parameters of transmitance, conductivity and the surface topography of compliant conductive substrate.
Embodiment 5
Board structure as shown in Figure 1, flexible substrate 1 adopts polyvinyl alcohol, and conductive layer 2 nano silver wire films are filled the polyvinyl alcohol of doped graphene in the space of described nano silver wire film, and the doping mass ratio of described Graphene is 5%.
The preparation method is similar to embodiment 1.
Embodiment 6
Board structure as shown in Figure 1, flexible substrate 1 adopts PAEK, and conductive layer 2 adopts the nano silver wire films, fills the PAEK of doped graphene in the space of described nano silver wire film, and the doping mass ratio of described Graphene is 10%.
The preparation method is similar to embodiment 1.
Embodiment 7
Board structure as shown in Figure 1, flexible substrate 1 adopts poly-paraphenylene terephthalamide's trimethyl hexamethylene diamine, conductive layer 2 adopts the nano silver wire film, fills poly-paraphenylene terephthalamide's trimethyl hexamethylene diamine of doped graphene in the space of described nano silver wire film, and the doping mass ratio of described Graphene is 15%.
The preparation method is similar to embodiment 1.
Embodiment 8
Board structure as shown in Figure 1, flexible substrate 1 adopts Kynoar, and conductive layer 2 adopts the nano silver wire films, fills the Kynoar of doped graphene in the space of described nano silver wire film, and the doping mass ratio of described Graphene is 20%.
The preparation method is similar to embodiment 1.
Embodiment 9
Board structure as shown in Figure 1, flexible substrate 1 adopts polyurethanes, and conductive layer 2 adopts the nano silver wire films, fills the polyurethanes of doped graphene in the space of described nano silver wire film, and the doping mass ratio of described Graphene is 30%.
The preparation method is similar to embodiment 1.
Embodiment 10
Board structure as shown in Figure 1, flexible substrate 1 adopts PEN, conductive layer 2 adopts the nano silver wire film, fills the PEN of doped graphene in the space of described nano silver wire film, and the doping mass ratio of described Graphene is 40%.
The preparation method is similar to embodiment 1.
Claims (4)
1. base board for flexible optoelectronic part, comprise flexible substrate and conductive layer, it is characterized in that, described flexible substrate and conductive layer are made of a kind of in the following dual mode: 1. described flexible substrate is transparent dielectricity polymeric material, described conductive layer is the nano silver wire film, is filled with Graphene in the space of described nano silver wire film; 2. described flexible substrate is the transparent dielectricity polymeric material of doped graphene, and described conductive layer is the nano silver wire film, is filled with the transparent dielectricity polymeric material of doped graphene in the space of described nano silver wire film.
2. base board for flexible optoelectronic part according to claim 1 is characterized in that, is less than or equal to 40% at the doping mass ratio of 2. planting Graphene in the structure.
3. base board for flexible optoelectronic part according to claim 1, it is characterized in that described transparent dielectricity polymeric material comprises polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin polyacrylic acid, PAEK, Kynoar, polyester, PEN, polyacrylate, poly-paraphenylene terephthalamide's trimethyl hexamethylene diamine, polybutene and polyvinyl alcohol.
4. the preparation method of a base board for flexible optoelectronic part is characterized in that, may further comprise the steps:
1. the rigid substrates of surface roughness less than 1nm cleaned, clean the back and dry up with drying nitrogen;
2. take the mode of spin coating or spraying or self assembly or inkjet printing or silk screen printing on the substrate of cleaning, to prepare the nano silver wire film;
3. on the nano silver wire film spin coating or the spraying doped graphene transparent dielectricity polymer material layer, or first spin coating or drip the solution be coated with or spray graphitiferous alkene, spin coating or spray transparent dielectricity polymer material layer again, described transparent dielectricity polymeric material comprise polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin polyacrylic acid, PAEK, Kynoar, polyester, PEN, polyacrylate, poly-paraphenylene terephthalamide's trimethyl hexamethylene diamine, polybutene and polyvinyl alcohol;
4. hot curing being carried out on the rigid substrates surface handles;
5. the transparent dielectricity polymer material layer after nano silver wire film and the curing or the transparent dielectricity polymer material layer of doped graphene are peeled off the rigid substrates surface, form the compliant conductive substrate;
6. test the parameters of transmitance, conductivity and the surface topography of compliant conductive substrate.
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| CN 201110096846 CN102201538A (en) | 2011-04-18 | 2011-04-18 | Substrate for flexible photoelectronic device and preparation method thereof |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820074A (en) * | 2012-05-07 | 2012-12-12 | 上海交通大学 | Conductive base plate for photoelectric device and preparation method for conductive base plate |
| CN103426494A (en) * | 2012-05-15 | 2013-12-04 | 中国科学院上海有机化学研究所 | Conducting film combined by graphene and metal nanowires, preparing method thereof and application for preparing transparent conducting film |
| CN104651784A (en) * | 2015-03-13 | 2015-05-27 | 福建省诺希科技园发展有限公司 | Manufacturing method of carbon-silver composite target for curved touch screen |
| CN104766932A (en) * | 2015-04-22 | 2015-07-08 | 电子科技大学 | Biodegradable baseplate used for soft light electron device and manufacturing method thereof |
| EP2765582A4 (en) * | 2011-10-06 | 2015-08-26 | Korea Electro Tech Res Inst | One-dimensional conductive nanomaterial-based conductive film having the conductivity thereof enhanced by a two-dimensional nanomaterial |
| CN105070352A (en) * | 2015-07-22 | 2015-11-18 | 西安交通大学 | Flexible super-flat transparent conductive film and preparing method thereof |
| CN106299160A (en) * | 2016-11-15 | 2017-01-04 | 吉林大学 | A kind of using plasma technical finesse nano silver wire the method preparing organic optoelectronic device flexible electrode by substrate transfer |
| CN106611638A (en) * | 2016-12-30 | 2017-05-03 | 华中科技大学 | Low temperature conductive micrometer and/or nanowire network transfer method |
| CN109580739A (en) * | 2018-12-17 | 2019-04-05 | 电子科技大学 | A kind of flexible exhalation ammonia gas sensor and preparation method thereof based on porous-substrates |
| CN110797140A (en) * | 2019-11-13 | 2020-02-14 | 东南大学 | Silver nanowire and graphene composite flexible transparent conductive film and preparation method thereof |
| CN115922096A (en) * | 2022-04-15 | 2023-04-07 | 山东理工大学 | Method for preparing flexible transparent electrode material by femtosecond laser ablation |
-
2011
- 2011-04-18 CN CN 201110096846 patent/CN102201538A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2765582A4 (en) * | 2011-10-06 | 2015-08-26 | Korea Electro Tech Res Inst | One-dimensional conductive nanomaterial-based conductive film having the conductivity thereof enhanced by a two-dimensional nanomaterial |
| CN102820074A (en) * | 2012-05-07 | 2012-12-12 | 上海交通大学 | Conductive base plate for photoelectric device and preparation method for conductive base plate |
| CN103426494A (en) * | 2012-05-15 | 2013-12-04 | 中国科学院上海有机化学研究所 | Conducting film combined by graphene and metal nanowires, preparing method thereof and application for preparing transparent conducting film |
| CN104651784B (en) * | 2015-03-13 | 2017-05-17 | 福建省诺希科技园发展有限公司 | Manufacturing method of carbon-silver composite target for curved touch screen |
| CN104651784A (en) * | 2015-03-13 | 2015-05-27 | 福建省诺希科技园发展有限公司 | Manufacturing method of carbon-silver composite target for curved touch screen |
| CN104766932A (en) * | 2015-04-22 | 2015-07-08 | 电子科技大学 | Biodegradable baseplate used for soft light electron device and manufacturing method thereof |
| CN105070352B (en) * | 2015-07-22 | 2017-10-20 | 西安交通大学 | A kind of flexible super flat transparent conductive film and preparation method thereof |
| CN105070352A (en) * | 2015-07-22 | 2015-11-18 | 西安交通大学 | Flexible super-flat transparent conductive film and preparing method thereof |
| CN106299160A (en) * | 2016-11-15 | 2017-01-04 | 吉林大学 | A kind of using plasma technical finesse nano silver wire the method preparing organic optoelectronic device flexible electrode by substrate transfer |
| CN106611638A (en) * | 2016-12-30 | 2017-05-03 | 华中科技大学 | Low temperature conductive micrometer and/or nanowire network transfer method |
| CN109580739A (en) * | 2018-12-17 | 2019-04-05 | 电子科技大学 | A kind of flexible exhalation ammonia gas sensor and preparation method thereof based on porous-substrates |
| CN110797140A (en) * | 2019-11-13 | 2020-02-14 | 东南大学 | Silver nanowire and graphene composite flexible transparent conductive film and preparation method thereof |
| CN115922096A (en) * | 2022-04-15 | 2023-04-07 | 山东理工大学 | Method for preparing flexible transparent electrode material by femtosecond laser ablation |
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Application publication date: 20110928 |