CN110299338A - A kind of inner prop external circular type two-region composite welding structure and hybrid bonded method - Google Patents

A kind of inner prop external circular type two-region composite welding structure and hybrid bonded method Download PDF

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Publication number
CN110299338A
CN110299338A CN201910502021.6A CN201910502021A CN110299338A CN 110299338 A CN110299338 A CN 110299338A CN 201910502021 A CN201910502021 A CN 201910502021A CN 110299338 A CN110299338 A CN 110299338A
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China
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photoresist
metal
circular type
inner prop
external circular
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CN201910502021.6A
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CN110299338B (en
Inventor
李震
顾轶峰
简·史蒂芬·莫泰
龚里
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Sus Trade (shanghai) Co Ltd
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Sus Trade (shanghai) Co Ltd
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Abstract

The invention discloses a kind of inner prop external circular type two-region composite welding structures, including kernel column and outer collarette, the kernel column using can cold welding at room temperature metal or metal system, the outer collarette uses high-temperature solder metal or metal system, a kind of hybrid bonded method based on above-mentioned welding spot structure is also disclosed, includes the following steps: that (1) provides the wafer (substrate) for having inner prop external circular type two-region composite welding structure；(2) multiple chips are bonded on wafer (substrate) in advance one by one by way of room temperature/low temperature pressing；(3) the multiple chips being bonded in advance are subjected to primary whole thermocompression bonding.The present invention thoroughly avoids conventional multi-chip to single wafer (substrate) eutectic bonding technique because being bonded failure caused by heating repeatedly, substantially increase the efficiency of technique entirety, the technology difficulty in chip fabrication process is effectively reduced, process costs are greatly saved.

Description

A kind of inner prop external circular type two-region composite welding structure and hybrid bonded method
Technical field
The present invention relates to technical field of manufacturing semiconductors, specifically a kind of inner prop external circular type two-region composite welding structure and mixed Close bonding method.
Background technique
Currently, common multi-chip to single wafer or multi-chip to the bonding techniques of single substrate usually only with A kind of combination of brazing metal, common solder combinations include Jin-tin, Yin-tin, copper-tin, tin-lead etc., and the bonding temperature needed is logical Often between 200 DEG C~350 DEG C.
Excessively high bonding temperature may be such that in the bonding process of multi-chip to wafer (substrate), wafer or Person's substrate by heating-cooling repeatedly, cause chip risen repeatedly-cooling after fail or the repeatedly heated rear surface of solder generates Severe oxidation, which is eventually led to, to be bonded.
Summary of the invention
The purpose of the present invention is to overcome the deficiency in the prior art, provide a kind of inner prop external circular type two-region composite welding structure and Hybrid bonded method.
In order to achieve the above objectives, The technical solution adopted by the invention is as follows:
A kind of inner prop external circular type two-region composite welding structure, including kernel column and outer collarette, the kernel column uses can room The metal or metal system of the lower cold welding of temperature, the outer collarette use high-temperature solder metal or metal system.
Preferably, can at room temperature cold welding metal be indium or tin；Can at room temperature cold welding metal system be gold-indium, indium-indium Or any one in Jin-tin.
Preferably, high-temperature solder metal is gold or tin, and high-temperature solder metal system is Jin-tin, Yin-tin, copper-tin or tin- Any one in lead.
The present invention discloses the preparation methods of above-mentioned inner prop external circular type two-region composite welding structure, including walk as follows It is rapid:
(1) in crystal column surface coating photoresist, photoresist with a thickness of 5~50 μm；
(2) step (1) is coated with the wafer of photoresist successively through exposure and development and after baking processing, obtained photoetching Glue pattern is in the pattern that crystal column surface is in inverted trapezoidal；
(3) by the way of vapor deposition or sputtering, the metal of cold welding or metal system step (2) will can be deposited at room temperature Photoetching offset plate figure surface, photoresist opening ground the metal of cold welding or metal system can deposit to wafer table at room temperature Face, deposition with a thickness of 3~50 μm, and be less than photoresist thickness；
(4) use wet process metal lift-off material, by step (3) photoresist surface can cold welding at room temperature metal or metal System removal, then photoresist is removed, form welding column inner core；
(5) formed the crystal column surface coating photoresist of welding column inner core in step (4), photoresist with a thickness of 5~ 50μm；
(6) step (5) is coated with the wafer of photoresist successively through exposure and development and after baking processing, obtained photoetching Glue pattern is in the pattern that crystal column surface and welding column inner core surface are in inverted trapezoidal；
(7) by the way of vapor deposition or sputtering or plating, high-temperature solder metal or metal system are deposited into step (6) photoetching offset plate figure surface deposits to crystal column surface in the local high-temperature solder metal or metal system of photoresist opening；
(8) wet process metal lift-off material is used, by the high-temperature solder metal or metal system on step (7) photoresist surface Removal, then photoresist is removed, form welding column peripheral structure；
(9) wafer of step (8) is flowed back at a temperature of 150~250 DEG C, make can cold welding at room temperature metal or metallic object It is that surface forms protrusion, obtains inner prop external circular type two-region composite welding structure.
Further, the step (2) and (6) exposure light source using visible light, 436nm wavelength light, 365nm wavelength light, One or more mixing of 405nm wavelength light, 248nm wavelength light or 193nm wavelength light, the mode of exposure can be used projection, Contact or proximity, developer solution use alkaline solution or organic solvent.
Further, the mode that the step (4) and step (8) remove photoresist is impregnated using reagent；Or/and use reagent When impregnating photoresist dissolution removal, completed by the way of high pressure wet-chemical spray gun or ultrasonic vibration auxiliary.
It is another object of the present invention to protect the mixing based on above-mentioned inner prop external circular type two-region composite welding structure Bonding method includes the following steps:
(1) wafer for having inner prop external circular type two-region composite welding structure is provided；
(2) high-precision flip-chip bonder is used, multiple chips are bonded in advance one by one in such a way that low temperature presses On wafer, pre- bonding temperature≤100 DEG C, pre- bonding pressure is 100~4000N；
(3) the multiple chips being bonded in advance are carried out by primary whole thermocompression bonding, bonding temperature by wafer bonding machine It is 200~450 DEG C, bonding pressure is 4~100KN.
Compared with prior art, the advantages and positive effects of the present invention are as follows:
It is possible, firstly, to complete the pre- bonding in multi-chip to single wafer (substrate) at low temperature, it is then transferred into wafer Bonder last time high temperature completes the final high temperature bonding of multiple chips；Thoroughly avoid conventional multi-chip to single wafer (substrate) Eutectic bonding technique is because being bonded failure caused by heating repeatedly.
Secondly, the pre- bonding process under low temperature efficiently avoids each chip in the welding process of Xiang Jingyuan (substrate) One by one the tediously long time needed for heating-temperature-fall period, substantially increase the production efficiency of technique entirety.
Again, it the metal system (gold-indium, indium-indium etc.) of cold welding and common high temperature can be welded at room temperature using one group Material system (Jin-tin, Yin-tin, copper-tin, tin-lead, tin etc.) combines, and forms combined type welding spot structure, combined type solder joint Cold welding mode can be used at room temperature, the pre- bonding of multi-chip to single wafer (substrate) is completed, after being then bonded in advance again Chip be put into wafer bonding machine and apply temperature and pressure, to complete final bonding.
Finally, being avoided in such a way that cold welding material metal system and room temperature are bonded in advance
Metal-Direct-Bonding (direct bonded metal conjunction) or hybrid bonded (HybirdBonding) work of semiconductor Before skill, the rigors processed and polished to chip bonding face effectively reduce the technology difficulty in chip fabrication process, significantly Process costs are saved.
Detailed description of the invention
Fig. 1 inner prop external circular type of the present invention two-region composite welding structure front view；
Fig. 2 inner prop external circular type of the present invention two-region composite welding structure top view；
The corresponding composite welding structure preparation process flow diagrammatic cross-section of the embodiment of the present invention of Fig. 3~8.
The corresponding hybrid bonded method and process process profile diagram of the embodiment of the present invention of Fig. 9~10.
Fig. 1-2 mark meaning is as follows: 1- kernel column, the outer collarette of 2-.
Specific embodiment
It elaborates below to specific embodiments of the present invention.
A kind of inner prop external circular type two-region composite welding structure, as shown in Figs. 1-2, including kernel column 1 and outer collarette 2, it is described Kernel column 1 uses indium metal, and the outer collarette 2 uses gold-tin alloy.
The preparation method of above-mentioned inner prop external circular type two-region composite welding structure, includes the following steps:
(1) in crystal column surface coating photoresist, photoresist with a thickness of 25 μm；
(2) wafer that step (1) is coated with photoresist is successively handled with baking through exposure and development, obtained photoresist Figure is in the pattern that crystal column surface is in inverted trapezoidal；As shown in Figure 3；
(3) it adopts vapor deposition method, indium metal is deposited to the photoetching offset plate figure surface of step (2), and open in photoresist Mouthful local indium metal deposit to crystal column surface, deposition with a thickness of 20 μm；As shown in Figure 4；
(4) wet process metal lift-off material is used, the indium metal on step (3) photoresist surface is removed, then photoresist is gone It removes, forms welding column inner core；As shown in Figure 5；
(5) formed the crystal column surface coating photoresist of welding column inner core in step (4), photoresist with a thickness of 25 μm；
(6) wafer that step (5) is coated with photoresist is successively handled with baking through exposure and development, obtained photoresist Figure is in the pattern that crystal column surface and welding column inner core surface are in inverted trapezoidal；As shown in Figure 6；
(7) it adopts vapor deposition method, gold-tin alloy is deposited into step (6) photoetching offset plate figure surface, and open in photoresist The local gold-tin alloy of mouth deposits to crystal column surface；As shown in Figure 7；
(8) wet process metal lift-off material is used, the gold-tin alloy on step (7) photoresist surface is removed, then photoetching Glue removal, forms welding column peripheral structure；As shown in Figure 8；
(9) wafer of step (8) is flowed back at a temperature of 200 DEG C, indium metal surface forms protrusion, obtains inner prop external circular type Two-region composite welding structure.
The light source of the step (2) and (6) exposure uses high-pressure sodium lamp mixed wavelengths light source, and the mode of exposure is using close Formula, developer solution use 2.38% tetramethylammonium hydroxide.
When the step (4) and step (8) impregnate dissolution removal photoresist using 85 DEG C of nmp solution, and with ultrasound shake The mode for swinging auxiliary is completed.
Based on the hybrid bonded method of above-mentioned inner prop external circular type two-region composite welding structure, include the following steps:
(1) wafer for having above-mentioned inner prop external circular type two-region composite welding structure is provided；
(2) high-precision flip-chip bonder is used, multiple chips are bonded to wafer in advance one by one by way of pressing On, 25 DEG C of pre- bonding temperature, pre- bonding pressure is 1000N；As shown in Figure 9；
(3) the multiple chips being bonded in advance are subjected to primary whole thermocompression bonding through wafer bonding machine, bonding temperature is 350 DEG C, bonding pressure 70KN, as shown in Figure 10；.
Remarks: vapor deposition is using ei-5z high vacuum evaporation filming equipment (Japanese ULVAC) or U.S.'s pellet vacuum Explorer The thickness of evaporating and coating equipment, photoresist film is measured with DektakXT step instrument, and proximity printing uses Germany's SUSS exposure machine MA6/MA8/MA150e/MA200, high-precision flip-chip bonder use the FC150/FC300/FC NEO/ of SET company, France ACCuRA100/ACCuRA Plus, wafer bonding machine use the XB8 type or XBC200 type of SUSS.
The present invention is based on the welding spot structures of inside and outside ring type, and multiple chips are led to the direct pressure welding of excessive pressure one by one at room temperature Onto wafer, pre- bonding is completed, then the multiple chips being bonded in advance are carried out by primary whole hot pressing key using the big pressure of high temperature It closes, cold pressing and hot pressing wafer bond techniques is combined, thoroughly avoid conventional multi-chip to single wafer (substrate) eutectic bonding work Skill substantially increases the efficiency of technique entirety, effectively reduces chip fabrication process because being bonded failure caused by heating repeatedly In technology difficulty, process costs are greatly saved.
Above-described embodiment is only more excellent embodiment of the invention, is implemented according to the technical essence of the invention to above Any simple modification, modification and the alternate variation that example is made, belong in the range of technical solution of the present invention.

Claims (7)

1. a kind of inner prop external circular type two-region composite welding structure, which is characterized in that including kernel column and outer collarette, the kernel column Using can cold welding at room temperature metal or metal system, the outer collarette uses high-temperature solder metal or metal system.
2. a kind of inner prop external circular type two-region according to claim 1 composite welding structure, which is characterized in that can be cold at room temperature The metal of weldering is indium or tin；Can at room temperature cold welding metal system be gold-indium, indium-indium or Jin-tin in any one.
3. a kind of inner prop external circular type two-region according to claim 1 composite welding structure, which is characterized in that high-temperature solder gold Belonging to is gold or tin, and high-temperature solder metal system is any one in Jin-tin, Yin-tin, copper-tin or tin-lead.
4. the preparation method of the inner prop external circular type two-region composite welding structure as described in claims 1 to 3 any one, feature It is, includes the following steps:
(1) in crystal column surface coating photoresist, photoresist with a thickness of 5~50 μm；
(2) step (1) is coated with the wafer of photoresist successively through exposure and development and after baking processing, obtained photoresist figure Shape is in the pattern that crystal column surface is in inverted trapezoidal；
(3) by the way of vapor deposition or sputtering, the metal of cold welding or metal system the light of step (2) will can be deposited at room temperature Photoresist patterned surface the metal of cold welding or metal system can deposit to crystal column surface at room temperature on the ground of photoresist opening, sink It is long-pending with a thickness of 3~50 μm, and be less than the thickness of photoresist；
(4) use wet process metal lift-off material, by step (3) photoresist surface can cold welding at room temperature metal or metal system Removal, then photoresist is removed, form welding column inner core；
(5) formed the crystal column surface coating photoresist of welding column inner core in step (4), photoresist with a thickness of 5~50 μm；
(6) step (5) is coated with the wafer of photoresist successively through exposure and development and after baking processing, obtained photoresist figure Shape is in the pattern that crystal column surface and welding column inner core surface are in inverted trapezoidal；
(7) by the way of vapor deposition or sputtering or plating, high-temperature solder metal or metal system are deposited into step (6) light Photoresist patterned surface deposits to crystal column surface in the local high-temperature solder metal or metal system of photoresist opening；
(8) use wet process metal lift-off material, by step (7) photoresist surface high-temperature solder metal or metal system go It removes, then photoresist is removed, form welding column peripheral structure；
(9) wafer of step (8) is flowed back at a temperature of 150~250 DEG C, making can the metal of cold welding or metal system table at room temperature Face forms protrusion, obtains inner prop external circular type two-region composite welding structure.
5. a kind of preparation method of inner prop external circular type two-region according to claim 4 composite welding structure, which is characterized in that The light source of the step (2) and (6) exposure uses visible light, 436nm wavelength light, 365nm wavelength light, 405nm wavelength light, Projection, contact or close can be used in one or more mixing of 248nm wavelength light or 193nm wavelength light, the mode of exposure Formula, developer solution use alkaline solution or organic solvent.
6. a kind of preparation method of inner prop external circular type two-region according to claim 5 composite welding structure, which is characterized in that The mode that the step (4) and step (8) remove photoresist is impregnated using reagent；Or/and it is impregnated with reagent photoetching peptization When solution removal, completed by the way of high pressure wet-chemical spray gun or ultrasonic vibration auxiliary.
7. a kind of based on the hybrid bonded of inner prop external circular type two-region composite welding structure described in claims 1 to 3 any one Method, which comprises the steps of:
(1) wafer for having inner prop external circular type two-region composite welding structure is provided；
(2) high-precision flip-chip bonder is used, multiple chips are bonded to wafer in such a way that low temperature presses in advance one by one On, pre- bonding temperature≤100 DEG C, pre- bonding pressure is 100~4000N；
(3) the multiple chips being bonded in advance are carried out by primary whole thermocompression bonding, bonding temperature 200 by wafer bonding machine ~450 DEG C, bonding pressure is 4~100KN.
CN201910502021.6A 2019-06-11 2019-06-11 Inner column outer ring type double-area composite welding spot structure and hybrid bonding method Expired - Fee Related CN110299338B (en)

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