CN110297337A - Two selenizing rhenium nanometer sheet terahertz polarization modulation devices of regulating and controlling voltage - Google Patents
Two selenizing rhenium nanometer sheet terahertz polarization modulation devices of regulating and controlling voltage Download PDFInfo
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- 230000010287 polarization Effects 0.000 title claims abstract description 33
- 230000001276 controlling effect Effects 0.000 title claims abstract description 11
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 11
- 229910052702 rhenium Inorganic materials 0.000 title claims description 9
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 title claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 239000007791 liquid phase Substances 0.000 claims abstract description 5
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 239000002356 single layer Substances 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 230000005684 electric field Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000001228 spectrum Methods 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 6
- 230000003595 spectral effect Effects 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims description 3
- 230000035772 mutation Effects 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000002052 molecular layer Substances 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite alkenes Chemical class 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229940125730 polarisation modulator Drugs 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0136—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The present invention relates to ultrafast Terahertz Technology fields, and for the output power for polarizing THz wave for realizing the automatically controlled modulation of active control, modulation degree is big, and polarization sensitivity is high.The technical solution adopted by the present invention is that being based on ReSe2The terahertz polarization modulation device of nanometer sheet regulating and controlling voltage, comprising: ReSe2Nanometer sheet, additional electrode, active control DC power supply, the source THz of linear polarization, THz polarizer；The ReSe2Nanometer sheet is that using liquid phase stripping means, perhaps the preparation of chemical vapor deposition CVD method forms monolayer or the less structure of molecular layer on a glass substrate, and the bearing mark of Re chain is a axis in plane, and natural joint plane bearing mark is b axis.Present invention is mainly applied to the design and manufacture occasions of terahertz polarization modulation device.
Description
Technical field
The present invention relates to ultrafast Terahertz Technology fields.In particular to two selenizing rhenium (ReSe of a kind of regulating and controlling voltage2) receive
Rice piece terahertz polarization modulator.
Technical background
THz wave (THz, 1THz=1012Hz electromagnetic wave of the frequency within the scope of 0.1THz-10THz) is typically referred to,
On electromagnetic spectrum between far infrared light wave and microwave.Compared to the electromagnetic wave with its all band, THz wave has its unique excellent
Gesture: cosmic background radiation, the rotational energy level of many organic macromolecules, especially large biological molecule and vibration level are located at THz
Wave band.The advantages that ultrafast THz pulse is because of its transient state, broadband property, coherence, low energy, in imaging, lossless detection, safety check, object
Change the fields such as analysis and presents good application prospect [1-3].Currently, being in terms of THz emission source, THz imaging and THz device
The research hotspot in the field.
In terms of THz modulation device research and development, it is broadly divided into passive device and active device at present.Passive device mainly by
Conventional material or artificial Meta Materials are constituted, such as: lens, beam splitter, grating and polarizer [4-6]；Active device mainly by
Material with special sensitive response, such as: the materials such as piezoelectricity, electric light, acousto-optic, magneto-optic, phase transformation or artificial Meta Materials structure
At, and parameter [7-9] is passed through come active control THz by extra electric field, light field, magnetic field, thermal field.It is invented from grapheme material
Since, the hot spot that two-dimentional (2D) stratified material is always studied in recent ten years, however the molecule in graphite alkenes 2D material is
Hexagonal structure is shown as isotropism under natural conditions, and polarization selectivity is relatively poor, and in transient metal sulfide 2D material
In molecular structure be three oblique mechanisms, be shown as anisotropy, ReSe under natural conditions2Nanometer sheet is exactly one of [10].
The present invention is based in ReSe2On the basis of nanometer sheet nature polarization properties, extra electric field is added and realizes that the THz of active control is inclined
Shake modulation device.
Bibliography:
1 Tonouchi M.Cutting-edge terahertz technology,Nature Photon,2007,1:
97-105.
2 Ferguson B,Zhang X C.Materials for terahertz science and
technology,Nature Materials,2002,1:26-33.
3 Lang L Y,Xing Q R,Li S X,et al.Experiment study on terahertz
radiation,Chin.Opt.Lett.,2004,2(11):677-679.
4 Scherger B,Scheller M,Jansen C,et al.Terahertz lenses made by
compression molding of micropowders,Appl.Opt.,2011,50(15):2256-2262.
5 Berry C.W.and Jarrahi M.,Broadband terahertz polarizing beam
splitter on a Polymer Substrate,J Infrared Milli Terahz Waves,2012,33:127-
130.
6 Gan Qiaoqiang,Fu Zhan,Ding Yujie et al.,Ultrawide-bandwidth slow-
light system based on THz plasmonic graded metallic grating structures,
Phys.Rev.Lett.,2008,100:256803.
7 Minah Seo,Jisoo Kyoung,,Hyeongryeol Park et al.,Active terahertz
nanoantennas based on VO 2phase transition,Nano Lett.,2010,10:2064–2068.
8 Jianqiang Gu,Ranjan singh,Xiaojun Liu,et al.,Active control of
electromagnetically induced transparency analogue in terahertz metamaterials,
2012,Nat.Commun.3:1151
9 Oliver Paul,Christian Imhof,Bert et al.,Polarization-
independent active metamaterial for high-frequency terahertz modulation,2008,
Opt.Express,2008,17(2):819-827.
10 Ashish Arora,Jonathan Noky,Matthias Drüppel,et al.Highly
Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,Nano
Lett.,2017,17:3202.
Summary of the invention
In order to overcome the deficiencies of the prior art, it proposes a kind of based in ReSe2On the basis of nanometer sheet nature polarization properties, add
Enter the THz Polarization Modulation device that extra electric field realizes active control.The modulation device structure is simple, can by lateral electrodes application
Time variant voltage, to increase ReSe2The anisotropy of nanometer sheet realizes the output work of the polarization THz wave of the automatically controlled modulation of active control
Rate, modulation degree is big, and polarization sensitivity is high.The technical solution adopted by the present invention is that two selenizing rhenium nanometer sheet terahertzs of regulating and controlling voltage
Hereby Polarization Modulation device, comprising: ReSe2Nanometer sheet, additional electrode, active control DC power supply, the source THz of linear polarization, THz
Polarizer；
The ReSe2Nanometer sheet is to use liquid phase stripping means or the chemical vapor deposition side CVD on a glass substrate
Method preparation forms the structure of monolayer or few molecular layer, and the bearing mark of Re chain is a axis, natural joint plane in plane
Bearing mark is b axis；
The additional electrode material can be tin-doped indium oxide, gold or silver, and applying electrode direction is along ReSe2Nanometer sheet is raw
Object a axis direction；
The active control DC power supply is programmable DC power supply, is applied between additional electrode automatically controlled required straight
Galvanic electricity pressure and random waveform；
The source THz of the linear polarization is that any THz transmitter is exported by THz polarizer.
Use detector for THz power detector and THz time-domain spectral instrument, ReSe is passed through in detection2Nanometer sheet voltage modulated
THz intensity, electric field amplitude and frequency spectrum afterwards.
Apply electrode direction in ReSe2The Re chain direction of nanometer sheet；The device is facing perpendicularly to the placement of incident THz wave direction,
Adjustment THz half wave plate makes the linear polarization and electrode direction i.e. ReSe of incident THz wave2Nanometer sheet a axis direction is parallel；
Pass through ReSe2The THz wave of nanometer sheet outgoing goes out maximum outgoing THz wave by THz polarizer analyzing, and by Golay-cell or
THz time-domain spectral instrument detection outgoing THz wave power or THz electric field amplitude or frequency spectrum；In active voltage modulated process, using can
DC power supply is programmed, in ReSe2Modulation waveform voltage needed for applying modulation between nanometer plate electrode, by changing ReSe2Nanometer
Carrier quantity and flow direction in piece, and apply voltage to ReSe2Molecule fetters the modulation of key stress, realizes to across ReSe2
The THz wave polarization of nanometer sheet or the active modulation of intensity；If in ReSe2Apply positive and negative mutation electricity between the electrode of nanometer sheet
Pressure, maximum percentage modulation can be realized, behind NAND gate circuit is added, THz switching device can be realized.
Compared with the prior art, the technical features and effects of the present invention are:
Currently used for the polarizer of THz, it is several to be broadly divided into metallic mesh, carbon nanotube, artificial Meta Materials.First two
Device belongs to passive device, not can be carried out active control, and artificial Meta Materials are although can be arbitrarily devised in principle, practical
On be a kind of design be exactly a kind of function, and it is only feasible to specific (design) wavelength, can not achieve wide-band modulation.In addition,
Photoetching and etching process are needed, process is complicated, and cost is very high, and especially size is too small after especially preparing, and is not easy large area and answers
With.In addition, Meta Materials are mostly metal material and semiconductor material, therefore actively modulation mostly uses temperature control or magnetic control, and regulates and controls
It is limited in scope.The present invention is based on ReSe2The technical characterstic and effect of the terahertz polarization modulating device of nanometer sheet regulating and controlling voltage are such as
Under: (1) ReSe2The preparation of nanometer sheet uses liquid phase stripping means or chemical vapor deposition (CVD) method, and preparation is relatively simple
Single, versatility and popularization are high；(2)ReSe2Nanometer sheet belongs to monolayer or lacks molecule layer state, by weak between upper and lower level
Van der Waals for constraint, therefore ReSe2Nanometer sheet natural quality is the anisotropic of strand in the 2 dimension levels shown, no
As the two-dimensional symmetrics material such as graphene, black squama, itself just has polarization selectivity；(3)ReSe2Nanometer sheet itself is semiconductor
Material, therefore in ReSe2ReSe can be obviously increased by applying voltage on the basis of the anisotropic natural quality of nanometer sheet2Nanometer sheet
Polarization Modulation degree, and the voltage-drop loading on the direction of atom Re chain have maximum percentage modulation；(4) regulation voltage source is selected
Programmable DC voltage source can realize the modulated voltage signal of forward and reverse random waveform and amplitude with design programming, therefore can
To realize that polarization or strength signal arbitrarily regulate and control；(5) this modulation device belongs to wideband modulator, is ok in THz wave band
Realize modulating action.
Detailed description of the invention
Fig. 1 is ReSe of the invention2Nanometer sheet molecular structure, molecular chain orientation label apply the signal in direction with electrode
Figure.
Fig. 2 is experimental principle block diagram of the invention.
In figure: 1 is the source linear polarization THz；2 be THz half wave plate；3 be paraboloidal mirror to (with 5)；4 be ReSe2It receives
Rice piece；5 be paraboloidal mirror to (with 3)；6 be THz polarizer；7 be THz detector；8 programmable DC power supplys.
Fig. 3 is the effect picture for applying square-wave voltage modulation.
Specific embodiment
The present invention is achieved through the following technical solutions, a kind of two selenizing rhenium nanometer sheet terahertz polarizations of regulating and controlling voltage
Modulation device, the device and experimental provision include: the source THz 1, output pulse pass through half wave plate 2, after by paraboloid
Mirror is expanded, collimates and is focused to 3, is incident on ReSe2Nanometer sheet 4, in ReSe2Apply modulation voltage in nanometer sheet, through 4 modulation
THz wave converge to THz detector 7 to 5 by paraboloidal mirror, and analyzing is realized by THz polarizer 6, THz detector 7 carries out function
Rate or electric field (frequency spectrum) measurement, are applied to ReSe2The active modulated voltage signal of nanometer sheet 4 is provided by programmable DC power supply 8.
Its device tests schematic diagram such as attached drawing 2.
It is characterized by:
Above-mentioned ReSe2Nanometer sheet 4 is prepared using using liquid phase stripping means or chemical vapor deposition (CVD) method,
Added with monolayer or few molecular layer (2-10 layers), and at Re chain direction (a axis in Fig. 1) using sedimentation or embedding inlay technique
Enter electrode, electrode size are as follows: long 6mm × wide 5mm × thickness 0.06mm, electrode gap 15mm.
Above-mentioned programmable DC power supply 8 is commercial product or the DC power supply that modularization integrates, and can be exported any
Required waveform and generating positive and negative voltage meet to ReSe2The active of nanometer sheet 4 is modulated.
The above-mentioned source THz 1 is the THz wave that existing THz generation technology issues.
Above-mentioned THz half wave plate 2 is existing commercialization THz wave plate product.
Above-mentioned paraboloidal mirror is respectively made of a pair of of metal off axis paraboloidal mirror to 3,5.
Above-mentioned THz polarizer 6 is that existing commercialization THz polarizes product (metallic mesh, thin polymer film).
Above-mentioned THz detector 7 is commercialization Golay-cell and THz time-domain spectral instrument, is respectively used to THz power and electric field
(frequency spectrum) measurement.
Two selenizing rhenium nanometer sheet terahertz polarization modulation device of regulating and controlling voltage of the invention applies electrode direction in ReSe2
The Re chain direction (a axis direction in Fig. 1) of nanometer sheet；The device is facing perpendicularly to incident THz wave direction and places, and adjustment THz bis-/
One wave plate makes the linear polarization and electrode direction (ReSe of incident THz wave2Nanometer sheet a axis direction) it is parallel；Pass through ReSe2Nanometer
The THz wave of piece outgoing goes out maximum outgoing THz wave by THz polarizer analyzing, and by Golay-cell or THz time-domain spectral instrument
Detection outgoing THz wave power or THz electric field amplitude (or frequency spectrum)；In active voltage modulated process, using programmable DC electricity
Source, in ReSe2Modulation waveform voltage needed for applying modulation between nanometer plate electrode, by changing ReSe2Current-carrying in nanometer sheet
Subnumber amount and flow direction, and apply voltage to ReSe2Molecule fetters the modulation of key stress, realizes to across ReSe2Nanometer sheet
The active of THz wave polarization or intensity is modulated；The ReSe2The nanometer sheet modulated response time is picosecond magnitude, square-wave voltage modulation effect
Fruit is as shown in Figure 3；If in ReSe2Apply positive and negative mutation voltage between the electrode of nanometer sheet, maximum percentage modulation can be realized,
NAND gate circuit is added below, THz switching device can be realized.
Claims (3)
1. a kind of two selenizing rhenium nanometer sheet terahertz polarization modulation devices of regulating and controlling voltage, characterized in that include: ReSe2Nanometer
Piece, additional electrode, active control DC power supply, the source THz of linear polarization, THz polarizer；The ReSe2Nanometer sheet be
Using liquid phase stripping means, perhaps the preparation of chemical vapor deposition CVD method forms monolayer or few molecule in glass substrate
The structure of layer, the bearing mark of Re chain is a axis in plane, and natural joint plane bearing mark is b axis；
The additional electrode material can be tin-doped indium oxide, gold or silver, and applying electrode direction is along ReSe2Nanometer sheet biology a axis
Direction；
The active control DC power supply is programmable DC power supply, applies automatically controlled required direct current between additional electrode
Pressure and random waveform；
The source THz of the linear polarization is that any THz transmitter is exported by THz polarizer.
2. two selenizing rhenium nanometer sheet terahertz polarization modulation devices of regulating and controlling voltage as described in claim 1, characterized in that adopt
It is THz power detector and THz time-domain spectral instrument with detector, ReSe is passed through in detection2THz after nanometer sheet voltage modulated is strong
Degree, electric field amplitude and frequency spectrum.
3. two selenizing rhenium nanometer sheet terahertz polarization modulation devices of regulating and controlling voltage as described in claim 1, characterized in that apply
Extreme direction is powered in ReSe2The Re chain direction of nanometer sheet；The device is facing perpendicularly to the placement of incident THz wave direction, and adjustment THz bis- divides
One of wave plate make incident THz wave linear polarization and electrode direction i.e. ReSe2Nanometer sheet a axis direction is parallel；Pass through ReSe2It receives
The THz wave of rice piece outgoing goes out maximum outgoing THz wave by THz polarizer analyzing, and by Golay-cell or THz time-domain spectral
Instrument detection outgoing THz wave power or THz electric field amplitude or frequency spectrum；In active voltage modulated process, using programmable DC electricity
Source, in ReSe2Modulation waveform voltage needed for applying modulation between nanometer plate electrode, by changing ReSe2Current-carrying in nanometer sheet
Subnumber amount and flow direction, and apply voltage to ReSe2Molecule fetters the modulation of key stress, realizes to across ReSe2Nanometer sheet
The active of THz wave polarization or intensity is modulated；If in ReSe2Apply positive and negative mutation voltage, Ji Keshi between the electrode of nanometer sheet
Existing maximum percentage modulation, behind NAND gate circuit is added, THz switching device can be realized.
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| JP2013029461A (en) * | 2011-07-29 | 2013-02-07 | Sumitomo Osaka Cement Co Ltd | Terahertz wave generating device, terahertz wave detection device, and terahertz wave spectral device |
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2019
- 2019-06-26 CN CN201910558232.1A patent/CN110297337B/en not_active Expired - Fee Related
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