CN110297337B - Voltage-controlled terahertz polarization modulation device with rhenium diselenide nanosheets - Google Patents
Voltage-controlled terahertz polarization modulation device with rhenium diselenide nanosheets Download PDFInfo
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- CN110297337B CN110297337B CN201910558232.1A CN201910558232A CN110297337B CN 110297337 B CN110297337 B CN 110297337B CN 201910558232 A CN201910558232 A CN 201910558232A CN 110297337 B CN110297337 B CN 110297337B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0136—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
Abstract
The invention relates to the technical field of ultrafast terahertz, and aims to realize active regulation and control of output power of electrically-controlled modulated polarized THz waves, and the terahertz wave polarization modulator is large in modulation degree and high in polarization sensitivity. The technical scheme adopted by the invention is based on ReSe2Terahertz polarization modulation device that nanometer piece voltage was regulated and control includes: ReSe2The system comprises a nanosheet, an additional electrode, an active control direct current power supply, a linearly polarized THz source and a THz polarizer; the said ReSe2The nano-sheet is prepared on a glass substrate by adopting a liquid phase stripping method or a chemical vapor deposition CVD method to form a monomolecular layer or a small molecular layer structure, the direction of a Re chain in a plane of the nano-sheet is marked as an a axis, and the direction of a natural joint plane is marked as a b axis. The terahertz polarization modulation device is mainly applied to the design and manufacturing occasions of terahertz polarization modulation devices.
Description
Technical Field
The invention relates to the technical field of ultrafast terahertz. In particular to a voltage-controlled rhenium diselenide (ReSe)2) A nano-sheet terahertz polarization modulator.
Technical Field
Terahertz wave (THz, 1THz ═ 10)12Hz) generally refers to electromagnetic waves having a frequency in the range of 0.1THz to 10THz, between the far infrared and microwaves in the electromagnetic spectrum. Compared with electromagnetic waves of other wave bands, the THz wave has unique advantages: cosmic background radiation, the rotational energy levels and vibrational energy levels of many organic macromolecules, especially biological macromolecules, lie in the THz band. The ultrafast THz pulse has the advantages of transient property, broadband property, coherence, low energy property and the like, and shows good application prospect in the fields of imaging, nondestructive detection, security inspection, physicochemical analysis and the like [1-3 ]]. Currently, it is in the field of THz emission sources, THz imaging and THz devicesThe research focus.
In the development of THz modulation devices, the THz modulation devices are mainly divided into passive devices and active devices. The passive device is mainly composed of conventional materials or artificial metamaterials, such as: lens, beam splitter, grating and polarizing device [4-6 ]](ii) a Active devices are mainly made of materials with a particularly sensitive response, such as: piezoelectric, electrooptical, acousto-optic, magneto-optic, phase change materials or artificial metamaterials, and the passing parameters of THz are actively regulated and controlled by an external electric field, an optical field, a magnetic field and a thermal field [7-9 ]]. Since the invention of graphene materials, two-dimensional (2D) layered materials have been the hot spot of research in recent ten years, however, the molecules in graphene 2D materials are hexagonal structures, which are shown to be isotropic in nature and relatively poor in polarization selectivity, while the molecular structures in transition metal sulfide 2D materials are triclinic structures, which are shown to be anisotropic in nature, and ReSe2One of the nano-sheets is [10 ]]. The invention is based on the discovery of ReSe2On the basis of the natural polarization property of the nano-sheet, an external electric field is added to realize the THz polarization modulation device with active control.
Reference documents:
1 Tonouchi M.Cutting-edge terahertz technology,Nature Photon,2007,1:97-105.
2 Ferguson B,Zhang X C.Materials for terahertz science and technology,Nature Materials,2002,1:26-33.
3 Lang L Y,Xing Q R,Li S X,et al.Experiment study on terahertz radiation,Chin.Opt.Lett.,2004,2(11):677-679.
4 Scherger B,Scheller M,Jansen C,et al.Terahertz lenses made by compression molding of micropowders,Appl.Opt.,2011,50(15):2256-2262.
5 Berry C.W.and Jarrahi M.,Broadband terahertz polarizing beam splitter on a Polymer Substrate,J Infrared Milli Terahz Waves,2012,33:127-130.
6 Gan Qiaoqiang,Fu Zhan,Ding Yujie et al.,Ultrawide-bandwidth slow-light system based on THz plasmonic graded metallic grating structures,Phys.Rev.Lett.,2008,100:256803.
7 Minah Seo,Jisoo Kyoung,,Hyeongryeol Park et al.,Active terahertz nanoantennas based on VO 2phase transition,Nano Lett.,2010,10:2064–2068.
8 Jianqiang Gu,Ranjan singh,Xiaojun Liu,et al.,Active control of electromagnetically induced transparency analogue in terahertz metamaterials,2012,Nat.Commun.3:1151
9 Oliver Paul,Christian Imhof,Bert
et al.,Polarization-independent active metamaterial for high-frequency terahertz modulation,2008,Opt.Express,2008,17(2):819-827.
10 Ashish Arora,Jonathan Noky,Matthias Drüppel,et al.Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,Nano Lett.,2017,17:3202.
disclosure of Invention
In order to overcome the defects of the prior art, the method is based on the ReSe2On the basis of the natural polarization property of the nano-sheet, an external electric field is added to realize the THz polarization modulation device with active control. The modulation device has simple structure, and can increase the ReSe by applying variable voltage to the lateral electrodes2The anisotropism of the nano-sheet realizes the active regulation and control of the output power of the electrically-controlled modulated polarized THz wave, and the modulation degree is large and the polarization sensitivity is high. The invention adopts the technical scheme that a voltage-regulated rhenium diselenide nanosheet terahertz polarization modulation device comprises: ReSe2The system comprises a nanosheet, an additional electrode, an active control direct current power supply, a linearly polarized THz source and a THz polarizer;
the said ReSe2The nano-sheet is prepared on a glass substrate by adopting a liquid phase stripping method or a chemical vapor deposition CVD method to form a monomolecular layer or a small molecular layer structure, the direction of a Re chain in a plane of the nano-sheet is marked as an a axis, and the direction of a natural joint plane is marked as a b axis;
the additional electrode material can be tin-doped indium oxide, gold or silver, and the direction of the applied electrode is along the ReSe2The nano-sheet is in the a-axis direction;
the active control direct current power supply is a programmable direct current power supply, and direct current voltage and any waveform required by electric control are applied between the additional electrodes;
the linearly polarized THz source is any THz emitter and is output through a THz polarizer.
The detector is a THz power detector and a THz time domain spectrometer, and the detection is performed by ReSe2THz intensity, electric field amplitude and frequency spectrum after voltage modulation of the nanosheets.
Applying an electrode in the direction of ReSe2The Re chain direction of the nanosheets; the device is placed in a way of facing the direction of the incident THz wave vertically, and the THz half wave plate is adjusted to ensure that the linear polarization direction of the incident THz wave and the electrode direction, namely the ReSe2The a-axis directions of the nano sheets are parallel; by ReSe2The THz wave emitted by the nanosheets is detected and deflected out of the maximum outgoing THz wave through the THz polarizer, and the power of the outgoing THz wave or the amplitude or the frequency spectrum of a THz electric field is detected by a Golay-cell or a THz time domain spectrometer; in the active voltage modulation process, a programmable DC power supply is adopted, in the ReSe2Applying modulation waveform voltage required by modulation between nanosheet electrodes by changing the ReSe2Number and flow direction of carriers in nanosheets, and application of voltage to the ReSe2Modulation of molecular bond-binding stress to achieve cross-ReSe2Active modulation of THz wave polarization or intensity of the nanoplates; if in ReSe2The maximum modulation degree can be realized by applying positive and negative mutation voltages between the electrodes of the nano-sheets, and the THz switch device can be realized by adding a NAND gate circuit behind the THz switch device.
Compared with the prior art, the invention has the technical characteristics and effects that:
at present, the polarization devices used for THz are mainly divided into a metal mesh grid, a carbon nano tube and an artificial metamaterial. The first two devices belong to passive devices and cannot be actively regulated, and although artificial metamaterials can be designed in principle at will, the artificial metamaterials are actually designed to be functions, and are only feasible for specific (designed) wavelengths, so that broadband modulation cannot be realized. In addition, the photoetching and etching processes are required, the process is complicated, the cost is high, and particularly, the size is too small and is not easy to be large after the preparationAnd (4) area application. In addition, most metamaterials are metallic materials and semiconductor materials, so that temperature control or magnetic control is mostly adopted for active modulation, and the regulation range is limited. The invention is based on ReSe2The technical characteristics and effects of the terahertz polarization modulation device regulated by the nanosheet voltage are as follows: (1) ReSe2The preparation of the nano-sheets adopts a liquid phase stripping method or a Chemical Vapor Deposition (CVD) method, the preparation is relatively simple, and the universality and the popularity are high; (2) ReSe2The nano-sheets are in a monomolecular layer or a few-molecular layer state, and the upper layer and the lower layer are bound by weak van der Waals force, so that the ReSe2The natural property of the nano-sheet is the anisotropy of molecular chains on a 2-dimensional layer, and the nano-sheet has polarization selectivity unlike two-dimensional symmetrical materials such as graphene and black scales; (3) ReSe2The nanoplatelets themselves are semiconducting materials and are thus in ReSe2The application of voltage on the basis of the natural property of the anisotropy of the nano-sheets can obviously increase the ReSe2The polarization modulation degree of the nanosheets, and the voltage loading has the maximum modulation degree in the direction of the atomic Re chain; (4) the control voltage source adopts a programmable direct current voltage source, and can design and program a modulation voltage signal with any waveform and amplitude in forward and reverse directions, so that the polarization or intensity signal can be controlled randomly; (5) the modulation device belongs to a broadband modulator, and can realize modulation action in THz wave band.
Drawings
FIG. 1 shows the ReSe of the present invention2A schematic diagram of the molecular structure of the nanosheet, the molecular chain orientation mark and the electrode application direction.
FIG. 2 is a schematic diagram of the experiment of the present invention.
In the figure: 1 is a linearly polarized THz source; 2 is THz half wave plate; 3 is a parabolic mirror pair (same as 5); 4 is ReSe2Nanosheets; 5 is a paraboloidal mirror pair (same as 3); 6 is THz polarizer; THz detector 7; 8 programmable dc power supply.
Fig. 3 is a graph of the effect of applying square wave voltage modulation.
Detailed Description
The invention is realized by the following technical scheme that the terahertz polarization modulation of the rhenium diselenide nanosheet is regulated and controlled by voltageMake the device, this device and experimental apparatus include: the output pulse of the THz source 1 passes through a half wave plate 2, then is subjected to beam expansion, collimation and focusing of a parabolic mirror pair 3, and is incident to the ReSe2 Nanosheet 4 in ReSe2Modulating voltage is applied to the nano-chip, THz waves modulated by 4 are converged to a THz detector 7 by a parabolic mirror pair 5, the THz polarizer 6 realizes polarization analysis, the THz detector 7 carries out power or electric field (frequency spectrum) measurement and applies the power or electric field (frequency spectrum) measurement to the ReSe2The actively modulated voltage signal of the nanoplate 4 is provided by a programmable dc power supply 8. The experimental schematic diagram of the device is shown in the attached figure 2.
The method is characterized in that:
the above-mentioned ReSe2The nano-sheet 4 is prepared by adopting a liquid phase stripping method or a Chemical Vapor Deposition (CVD) method, has a monomolecular layer or a small molecular layer (2-10 layers), and is added with an electrode in a Re chain direction (a axis in figure 1) by adopting a deposition method or an embedding method, wherein the size of the electrode is as follows: the length is 6mm, the width is 5mm, the thickness is 0.06mm, and the electrode spacing is 15 mm.
The programmable DC power supply 8 is a commercial product or a modularized integrated DC power supply, can output any required waveform and positive and negative voltage, and meets the requirement of ReSe2Active modulation of the nanoplatelets 4.
The THz source 1 described above is a THz wave generated by the existing THz generation technology.
The above-mentioned THz half-wave plate 2 is a commercial THz-wave plate product.
Each of the parabolic mirror pairs 3 and 5 is formed of a pair of metal off-axis parabolic mirrors.
The THz polarizer 6 described above is a commercially available THz polarizing product (metal mesh, polymer film).
The above-mentioned THz detector 7 is a commercial Golay-cell and THz time-domain spectrometer, which is used for THz power and electric field (spectrum) measurements, respectively.
According to the voltage-regulated rhenium diselenide nanosheet terahertz polarization modulation device, the direction of the applied electrode is in the ReSe2Re chain direction of the nanosheets (a-axis direction in fig. 1); the device is placed vertically to the incident THz wave direction, and the THz half wave plate is adjusted to make the linear polarization direction of the incident THz wave and the electrode direction (ReSe)2Nano meterThe sheet a axis direction) is parallel; by ReSe2The THz wave emitted by the nanosheets is detected and deflected out of the maximum outgoing THz wave through the THz polarizer, and the power of the outgoing THz wave or the amplitude (or frequency spectrum) of a THz electric field is detected by a Golay-cell or a THz time domain spectrometer; in the active voltage modulation process, a programmable DC power supply is adopted, in the ReSe2Applying modulation waveform voltage required by modulation between nanosheet electrodes by changing the ReSe2Number and flow direction of carriers in nanosheets, and application of voltage to the ReSe2Modulation of molecular bond-binding stress to achieve cross-ReSe2Active modulation of THz wave polarization or intensity of the nanoplates; the ReSe2The response time of the nanosheet modulation is picosecond magnitude, and the square wave voltage modulation effect is shown in figure 3; if in ReSe2The maximum modulation degree can be realized by applying positive and negative mutation voltages between the electrodes of the nano-sheets, and the THz switch device can be realized by adding a NAND gate circuit behind the THz switch device.
Claims (2)
1. A voltage-regulated rhenium diselenide nanosheet terahertz polarization modulation device is characterized by comprising: ReSe2The device comprises a nanosheet, an additional electrode, an active control direct current power supply, a linearly polarized THz source and a THz half wave plate; the said ReSe2The nano-sheet is prepared on a glass substrate by adopting a liquid phase stripping method or a chemical vapor deposition CVD method to form a monomolecular layer or a small molecular layer structure, the direction of a Re chain in a plane of the nano-sheet is marked as an a axis, and the direction of a natural joint plane is marked as a b axis; the additional electrode material is tin-doped indium oxide, gold or silver, and is in ReSe along the a-axis direction2Electrodes are arranged on two sides of the nanosheet;
the active control direct current power supply applies direct current voltage and any waveform required by electric control between the additional electrodes;
the linearly polarized THz source is any THz emitter and is output through a THz polarizer;
in the direction of the a-axis at ReSe2Electrodes are arranged on two sides of the nanosheet; the device is placed in a way of facing the direction of an incident THz wave perpendicularly, the output pulse of the THz polarizer passes through a THz half wave plate and then is subjected to beam expansion, collimation and focusing by a parabolic mirror pair, and the incident pulse is incidentTo ReSe2Nanosheets, adjusting the THz half wave plate to make the incident THz wave linearly polarized and oriented in the electrode direction, i.e. ReSe2The a-axis directions of the nano sheets are parallel; by ReSe2The THz wave emitted by the nanosheets is detected and deflected out of the maximum outgoing THz wave through the THz polarizer, and the power of the outgoing THz wave or the amplitude or the frequency spectrum of a THz electric field is detected by a Golay-cell or a THz time domain spectrometer; in the active voltage modulation process, an active control direct current power supply is adopted, and in the ReSe process2Applying modulation waveform voltage required by modulation between nanosheet electrodes by changing the ReSe2Number and flow direction of carriers in nanosheets, and application of voltage to the ReSe2Modulation of molecular bond-binding stress to achieve cross-ReSe2Active modulation of THz wave polarization or intensity of the nanoplates; if in ReSe2The maximum modulation degree can be realized by applying positive and negative mutation voltages between the electrodes of the nano-sheets, and the THz switch device can be realized by adding a NAND gate circuit behind the THz switch device.
2. The voltage-controlled rhenium diselenide nanosheet terahertz polarization modulation device as claimed in claim 1, wherein the detector is a THz power detector and a THz time domain spectrometer, and detection is performed by ReSe2THz intensity, electric field amplitude and frequency spectrum after voltage modulation of the nanosheets.
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