CN110281350A - For the method for connecting material, board shaft device and so as to form multi-layer board - Google Patents

For the method for connecting material, board shaft device and so as to form multi-layer board Download PDF

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Publication number
CN110281350A
CN110281350A CN201910523867.8A CN201910523867A CN110281350A CN 110281350 A CN110281350 A CN 110281350A CN 201910523867 A CN201910523867 A CN 201910523867A CN 110281350 A CN110281350 A CN 110281350A
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CN
China
Prior art keywords
aluminium
linking part
axis
plate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910523867.8A
Other languages
Chinese (zh)
Inventor
A·G·埃利奥特
B·D·A·埃利奥特
F·巴尔马
R·E·舒斯特
D·G·雷克斯
A·维伊特泽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Watlow Electric Manufacturing Co
Original Assignee
Component Re Engineering Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/543,727 external-priority patent/US8932690B2/en
Application filed by Component Re Engineering Co Inc filed Critical Component Re Engineering Co Inc
Publication of CN110281350A publication Critical patent/CN110281350A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
    • B28B1/00—Producing shaped prefabricated articles from the material
    • B28B1/14—Producing shaped prefabricated articles from the material by simple casting, the material being neither forcibly fed nor positively compacted
    • B28B1/16—Producing shaped prefabricated articles from the material by simple casting, the material being neither forcibly fed nor positively compacted for producing layered articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
    • B23K35/005—Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of a refractory metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • B23K35/286—Al as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
    • B28B1/00—Producing shaped prefabricated articles from the material
    • B28B1/30—Producing shaped prefabricated articles from the material by applying the material on to a core or other moulding surface to form a layer thereon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
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    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • B32B7/14—Interconnection of layers using interposed adhesives or interposed materials with bonding properties applied in spaced arrangements, e.g. in stripes
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
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    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
    • F16B9/00—Connections of rods or tubular parts to flat surfaces at an angle
    • F16B9/01—Welded or bonded connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • B32B2315/02—Ceramics
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
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Abstract

The present invention relates to a kind of for linking the method for the first ceramic member and the second ceramic member, which comprises the layer of continuous connecting material is brazed between two ceramic members.Connecting material get wet and flow can by selection connecting material, junction temperatures, at a temperature of time and connection atmosphere and other factors controlled.Ceramic member can be aluminium nitride, and ceramic member can use aluminium alloy brazing under controlled atmosphere.Linking part material, which may be adapted to then not only withstand, is handling indoor environment during substrate processing, but also withstands oxygen-containing atmosphere, and the oxygen-containing atmosphere can be seen in heater or electrostatic chuck axis.

Description

For the method for connecting material, board shaft device and so as to form multi-layer board
The application be it is entitled " for the method for connecting material, board shaft device and so as to form multi-layer board ", state The border applying date is that November 30, international application no PCT/US2012/067491, national application number in 2012 are 201280068344.5 application for a patent for invention divisional application.
Technical field
The present invention relates to the methods for object to link together, and more particularly, the present invention relate to link The method for welding of ceramic bodies.
Background technique
The connection of ceramic material can involve a need to the processing of very high temperature and very high contact pressure.For example, liquid Phase sintering can be used for linking together ceramic material.In the manufacture of the type, it is seen that at least two disadvantages.Firstly, compared with Hot pressurization/sintering of big complicated ceramic member needs biggish physical space in very professional treatment furnace.If secondly, at A part of product part loss on transmission evil idea or failure due to abrasion, then not can be used for dismantling the restorative procedure of larger part.Due to dedicated It fixture, high temperature and can not dismantle, these components lead to very high manufacturing cost invariably.
Other processing can be towards intensity, and stronger bonding force can be generated between part, although the bonding force It is sufficient in structure, but does not hermetically seal off part.In certain processing, using diffusion bonding, the diffusion is viscous Credit union expends the obvious a large amount of time, and can also change each, so that these parts are formed about noval chemical compound in linking part. This meeting is so that noval chemical compound is unsuitable for certain applications, and cannot be reworked or repair or and link again.
It needs a kind of for linking the linking method of ceramic member at low temperature, and provides a kind of airtight sealing element, and And it is allowed for repairing.
Detailed description of the invention
Fig. 1 is the SEM cross-sectional view of linking part according to certain embodiments of the present invention；
Fig. 2 is the SEM cross-sectional view of linking part according to certain embodiments of the present invention；
Fig. 3 is the SEM cross-sectional view of linking part according to certain embodiments of the present invention,
Fig. 4 is the SEM cross-sectional view of linking part according to certain embodiments of the present invention；
Fig. 5 is the SEM cross-sectional view of linking part according to certain embodiments of the present invention；
Fig. 6 is the schematic diagram of the schematic diagram of the ceramic component of connection according to certain embodiments of the present invention；
Fig. 7 is the cross-sectional view of the ceramic component of connection according to certain embodiments of the present invention；
Fig. 8 is the perspective view of ceramic member according to certain embodiments of the present invention, with support table top；
Fig. 9 is the cross-sectional view of the linking part of some embodiments bridge joint different atmosphere according to the present invention；
Figure 10 is the view for indicating the linking part integrality of linking part；
Figure 11 is the view for indicating the linking part integrality of linking part；
Figure 12 is the view for indicating the linking part integrality of linking part；
Figure 13 is the view for indicating the linking part integrality of linking part；
Figure 14 is the view for indicating the linking part integrality of linking part；
Figure 15 is the view for indicating the linking part integrality of linking part；
Figure 16 is the view for indicating the linking part integrality of linking part；
Figure 17 is the view for indicating the linking part integrality of linking part；
Figure 18 is the view for indicating the linking part integrality of linking part；
Figure 19 is the view for indicating the linking part integrality of linking part；
Figure 20 is the view of board shaft devices according to certain embodiments of the present invention, in semiconductor processes；
Figure 21 be it is according to certain embodiments of the present invention, for the high temperature press of plate and the schematic diagram of furnace；
Figure 22 be it is according to certain embodiments of the present invention, for the high temperature press of multiple plates and the schematic diagram of furnace；
Figure 23 is the schematic diagram of the high temperature press and furnace for board shaft device；
Figure 24 is the cross-sectional view of linking part according to certain embodiments of the present invention, between plate and axis；
Figure 25 is the cross-sectional view of linking part according to certain embodiments of the present invention, between plate and axis；
Figure 26 is the perspective view of shaft end according to certain embodiments of the present invention, with table top；
Figure 27 is broken section according to certain embodiments of the present invention, with board shaft device in semiconductor fabrication Figure；
Figure 28 is the close-up cross-sectional view of linking part according to certain embodiments of the present invention, between axis and plate；
Figure 29 is the view of board shaft device according to certain embodiments of the present invention；
Figure 30 is view that is according to certain embodiments of the present invention, preparing the plate and axis that are used for assembling；
Figure 31 is the view of the plate and axis with fixture according to certain embodiments of the present invention, that preparation is for assembling；
Figure 32 is the view of the plate and axis with fixture according to certain embodiments of the present invention, that preparation is for assembling；
Figure 33 is the decomposition of plates and shaft assembly according to certain embodiments of the present invention, with multiple concentric binder couses Figure；
Figure 34 is multiple-plate schematic cross sectional views according to certain embodiments of the present invention；
Figure 35 shows the partial sectional view of board group part according to certain embodiments of the present invention；
Figure 36 shows the partial sectional view of board group part according to certain embodiments of the present invention；
Figure 37 shows the partial sectional view of board group part according to certain embodiments of the present invention；
Figure 38 shows heating element according to certain embodiments of the present invention, between plate layer；
Figure 39 shows heating element according to certain embodiments of the present invention, between plate layer；
Figure 40 shows heating element according to certain embodiments of the present invention, between plate layer；And
Figure 41 shows electrode according to certain embodiments of the present invention, for board group part.
Specific embodiment
In one embodiment of the invention, a kind of side for by hermetically sealed linking part connection ceramic member is provided Method, and this method may include: the layer that connecting material is brazed between two parts.Getting wet and flowing for connecting material can lead to It crosses selection connecting material, junction temperatures, connection atmosphere and other factors and is controlled.Ceramic member can be aluminium nitride, and make pottery Porcelain piece can use aluminium alloy brazing under controlled atmosphere.Linking part material may be adapted to then both withstand in the substrate processing phase Between handling indoor environment, and withstand oxygen-containing atmosphere, the oxygen-containing atmosphere can be in heater or electrostatic chuck axis Inside see.
It is certain existing for linking the furnace and the compression presses in furnace that the processing of ceramic material needs profession, so as to even Tie material.For example, two parts can link together at very high temperature and contact pressure for liquid-phase sintering.It is high Warm liquid-phase sintering processing is it can be seen that temperature in the range of 1700 DEG C and the contact pressure in the range of 2500psi Power.
Other existing processing can use that binder couse is diffused into ceramics and/or ceramics are diffused into binder couse.At this In the processing of sample, the material composition that the reaction at linking part region will lead to the ceramics in the region near linking part becomes Change.The reaction can depend on the oxygen in atmosphere to promote diffusion reaction.
It is contrasted with above-mentioned DIFFUSION TREATMENT, linking method according to certain embodiments of the present invention is opposite by connecting material In the control that ceramic member to be linked gets wet and flows.In certain embodiments, the shortage of the oxygen during connection processing allows For suitably being got wet in the case where no reaction for changing the material in linking part region.It is suitably got wet in connecting material In the case where flowing, hermetically sealed linking part can be obtained at a lower temperature.In certain embodiments of the present invention, Pre-metallization is carried out to the ceramics in the region of linking part before connection processing.
In certain applications of the final products of the ceramics using connection, the intensity of linking part will not be crucial design because Element.In some applications, it may be desirable to which the leakproofness of linking part is to be allowed for separating the atmosphere on the either side of linking part.And And connecting material is important at branch, to make connecting material for the chemistry of ceramic component final products can be exposed Object has resistance.Connecting material may require that in addition may cause linking part deterioration and lose hermetically sealed chemicals and have resistance Power.Connecting material can also require be such type material, that is, the material by the ceramic device completed to then being supported Processing have no adverse effect.
The ceramic final products of embodiment according to the present invention manufacture can have been saved quite relative to past processing It is manufactured in the case where big energy.For example, the high-temperature-phase ratio with the liquid-phase sintering processing for connecting piece of the prior art, by It is used for the low temperature of connecting piece according to the method for the present invention, needs less energy.Furthermore it is possible to it is a large amount of energy-efficient the reason is that, Connection processing of the invention is without need for professional high temperature furnace and professional fixture and pressure needed for generating high physical contact stress Machine, the profession high temperature furnace and professional fixture and press are needed for the liquid-phase sintering processing of the prior art.
Having in the manufacture for the heater assembly being used in semiconductor processes can be with embodiment according to the present invention manufacture The example of the ceramic final products of connection.
Fig. 1 is the cross-sectional view of linking part 10 according to certain embodiments of the present invention.The figure such as passes through scanning electron microscopy Mirror (SEM) is observed, and is obtained under the magnifying power of 20,000x.First ceramic member 11 is attached to by binder couse 13 Second ceramic member 12.In this exemplary embodiment, the first ceramic member and the second ceramic member are made of single-crystal aluminum nitride (AlN). Binder couse starts as the aluminium foil with 0.4Wt%Fe.Junction temperatures are 1200 DEG C and are kept for 120 minutes.It is held in the palm in 7.3x10E-5 Vacuum degree under linked, across the physical contact pressure of linking part be about 290psi during connection.
Fig. 1 is shown with the coboundary 15 between the first ceramic member 11 and binder couse 13 and in binder couse 13 and second The linking part of lower boundary 16 between ceramic member 12.With the power view of 20,000x such as at frontier district, connection is not seen Layer is diffused into ceramic member.The sign of the reaction in ceramics is not seen.Any sign in gap is not shown in boundary, and It does not indicate to get wet during connection is handled by the boundary that aluminium is completed.The bright spot 14 seen in binder couse is iron aluminide, Iron is the residue of the foil for binder couse.
Fig. 2 is the cross-sectional view of linking part 20 according to certain embodiments of the present invention.The figure such as passes through scanning electron microscopy Mirror (SEM) is observed, and is obtained under the magnifying power of 8,000x.First ceramic member 21 is attached to by binder couse 23 Two ceramic members 22.In this exemplary embodiment, the first ceramic member and the second ceramic member are made of single-crystal aluminum nitride (AlN).Even Knot layer starts as the aluminium foil with 0.4Wt%Fe.Junction temperatures are 900 DEG C and are kept for 15 minutes.In the true of 1.9x10E-5 support Linked under the minimal physical contact pressure of linking part during connection under reciprocal of duty cycle.Binder couse 23 is shown as in the first pottery After porcelain piece 21 and second 22 connection, residual aluminum layer is remained between the part of connection.
Fig. 2 shows the coboundary 24 having between the first ceramic member 21 and binder couse 23 and in binder couse 23 and second The linking part of lower boundary 25 between ceramic member 22.With the power view of 8,000x such as at frontier district, connection is not seen Layer is diffused into ceramic member.The sign of the reaction in ceramics is not seen.Any sign in gap is not shown in boundary, and It does not indicate to get wet during connection is handled by the boundary that aluminium is completed.The bright spot 26 seen in binder couse contains Fe, and Fe is to use In the residue of the foil of binder couse.
Fig. 1 and linking part Fig. 2 shows embodiment according to the present invention, such as single-crystal aluminum nitride in the linking part Ceramics link with aluminium binder couse, this is realized and get wet comprehensively during connection is handled.Connection is not shown in these linking parts Layer is diffused into the sign in ceramics, and the sign of the reaction zone in binder couse or in ceramic member is not shown.In ceramic member Or the not no sign of chemical conversion in binder couse.There are remaining aluminium layers after connection processing.
Fig. 3 shows embodiment according to the present invention, linking part 30 using polycrystalline aluminum nitride ceramics.In Fig. 3, it is seen that Binder couse 32 is attached to lower ceramic member 31.The figure such as passes through scanning electron microscope (SEM) and observes, and with 4,000x Magnifying power.In this exemplary embodiment, the first ceramic member is made of polycrystalline aluminum nitride (A1N).Binder couse start for The aluminium foil of 0.4Wt%Fe.Junction temperatures are 1200 DEG C and are kept for 60 minutes.Connected under the vacuum degree of 2.4x10E-5 support Knot, the physical contact pressure during connection across linking part is about 470psi.
In certain embodiments, the polymorph A lN for the ceramics that e.g. Fig. 3 sees into Fig. 5 includes 96% AlN and 4% Yttrium oxide.This ceramics can be used for industrial application, this is because can make during the liquid-phase sintering for manufacturing ceramics Use low temperature.It is contrasted with single crystal AlN, low-temperature treatment reduces the energy dissipation and cost of manufacture ceramics.Polycrystalline material can also have There is preferred performance, for example, than high-tenacity.What other dopants of yttrium oxide and such as Sm2O3 were frequently used for material property can Manufacturing and tuning.
Fig. 3, which is shown, equally lacks diffusion at the boundary 33 between binder couse 32 and the first ceramic member 31, first pottery Porcelain piece 31 is polycrystalline AlN ceramic, the monocrystalline example as shown in referring to Fig. 1 and Fig. 2.Although boundary 33 can seem to compare Fig. 1 and 2 Shown in boundary it is somewhat coarse, this is because rougher initial surface.Diffusion is not seen along boundary.
Such as referring to Fig. 3 to Fig. 5, for the polymorph A lN of the ceramics such as containing 96%AlN and 4% yttrium oxide, ceramics tool There is AlN crystal grain, the AlN crystal grain is scattered with yttrium aluminate.In the presence of the ceramics are together with aluminium, for example, it is according to the present invention certain The binder couse of a little embodiments, under the high higher temperature of the liquidus temperature than Al, Al brazing material can rise anti-with yttrium aluminate It answers, cause in the AlN crystal grain at the surface of ceramics certain are expelled out of and discharge.
Fig. 4 shows embodiment according to the present invention, linking part 40 using polycrystalline aluminum nitride ceramics.In fig. 4, it is seen that Upper ceramic member 42 is attached to lower ceramic member 41 by binder couse 43.The figure such as passes through scanning electron microscope (SEM) and observes, and Magnifying power with 8,000x.In this exemplary embodiment, the first ceramic member is made of polycrystalline aluminum nitride (AlN), binder couse Start as the aluminium foil with 99.8%Al.Junction temperatures are 1120 DEG C and are kept for 60 minutes.In the vacuum degree of 2.0x10E-5 support Under during connection across linking part minimal physical contact pressure under linked.
Fig. 4 shows certain AlN crystal grain 46 in binder couse 43.Crystal grain 46 from the surface 44 of upper ceramic member 42 and/ Or the surface 45 of lower ceramic member 41 migrates.Since the aluminium of binder couse has attacked the yttrium aluminate between polymorph A lN crystal grain, from Expel AlN crystal grain in surface.AlN grain itself did not both react with aluminium binder couse, nor the aluminium seen is diffused into AlN crystalline substance Any sign of intragranular.Previously seen in the example of the single crystal AlN of Fig. 1 and Fig. 2, embodiment according to the present invention AlN is for the insensitivity that spreads with aluminium under treatment conditions, and maintains the insensitivity in the polycrystalline example of Fig. 4.
Fig. 5 shows embodiment according to the present invention, linking part 50 using polycrystalline aluminum nitride ceramics.In Fig. 5, it is seen that Binder couse 52 is attached to ceramic member 51.The figure such as passes through scanning electron microscope (SEM) and observes, and with 2,300X Magnifying power.In this exemplary embodiment, the first ceramic member 51 is made of polycrystalline aluminum nitride (AlN).Binder couse start for The aluminium powder of 5Wt%Zr.Junction temperatures are 1060 DEG C, and are kept for 15 minutes.Connected under the vacuum degree of 4.0x10E-5 support Knot, the physical contact pressure during connection across linking part is about 8psi.
It needs to can be used such as in the example of Fig. 1 to Fig. 5 in the application of hermetically sealed linking part between ceramic member The linking part seen.The existing processing of the airtight connection of ceramic member is needed into very high temperature, very professional using liquid-phase sintering Furnace and press, obvious a large amount of time, and it is fairly expensive.Using the processing of embodiment according to the present invention by airtight close The linking part of envelope and low temperature, not enough extensively but the treatment furnace of less valuableness, less time is needed to the connection of ceramics, and make Obtain significant save the cost.In addition, the part of connection can be separated and be reprocessed later according to expectation.
Fig. 6 shows the ceramic component 70 illustratively linked.In certain aspects, the ceramic component 70 of connection is by such as nitrogen The ceramics for changing aluminium are constituted.Other materials can be used, for example, aluminium oxide, silicon nitride, silicon carbide or beryllium oxide.In some aspects In, the first ceramic member 72 can be aluminium nitride, and the second ceramic member 71 can be aluminium nitride, zirconium oxide, aluminium oxide or other potteries Porcelain.In certain processing of the invention, 70 component of ceramic component of connection can be first in the initial treatment for being related to treatment furnace It manufactures eachly, forms first 72 and second 71 in the initial treatment.
Fig. 7 shows the cross-sectional view that the first ceramic member 72 is attached to the embodiment of linking part of the second ceramic member 71, for example, First ceramic member 72 and the second ceramic member 71 can be made of identical material or different materials.It can be related to linking material Material, for example, soldering filler material 74, the connecting material can be selected from the combination of brazing material as described herein or adhesive It selects, and linking part can be transported to according to method described herein.About linking part shown in fig. 7, the first ceramic member 72 It is located so that the linking part interface surface 73A of the first ceramic member 72 along the linking part interface surface 73B of the second ceramic member 71 The second ceramic member 71 is abutted, is only plugged with soldering filler between surface to be linked.In order to clearly show, linking part is exaggerated Thickness.In some embodiments it is possible to include recessed portion in one in mesh piece, one in the mesh piece shows at this It is the first ceramic member 72 in example, the recessed portion allows another mesh piece to be placed in recessed portion.
It as in the embodiment depicted in figure 7 may include multiple supports suitable for maintaining minimum brazing layer thickness.In certain realities It applies in example, such as referring to Fig. 8, one in ceramic member, such as the second ceramic member 71, it can use wait be attached to the first ceramic member Multiple support table tops 75 on the end 73B of 72 the second ceramic member 71.It is same that table top 75, which can be with the second ceramic member 71, A part of the structure of structure, and table top can be left and machining away structure from second ceramic member to be formed.Even After knot processing, table top 75 can abut the end 73A of the first ceramic member 72.In certain embodiments, table top can be used for producing The raw minimum brazing layer thickness for being used for linking part.In other embodiments, for the minimum brazing layer thickness of linking part by It is generated in brazing layer filler material containing dusty material.The maximum particle size for the dusty material for being included determines minimum linking part Thickness.Dusty material can be mixed with powdered brazing layer filler material, or be coated on ceramic bonds portion surface, or applied Onto the brazing layer filler material foil with suitable thickness, or it is included directly into the brazing layer filler material with suitable thickness In foil.In certain embodiments, soldering layer material thickness before the brazing will be greater than by between shaft end and plate table top or The maintained distance of powder particle.In some embodiments it is possible to set up minimum brazing layer thickness using other methods.? In some embodiments, Ceramic Balls can be used to set up minimum brazing layer thickness.In certain aspects, linking part thickness can be with Slightly larger than the size of support or other minimum thickness determining devices, not all brazing material can be from support and adjacent It is squeezed out between interface surface.In certain aspects, it can be found in aluminum brazing layer between support and adjacent interface surface It is certain.In certain embodiments, brazing material can have 0.006 inch of thickness before the brazing, and the linking part of completion is most Small thickness is 0.004 inch.Brazing material can be the aluminium with 0.4Wt%Fe.
Such as referring to Fig. 9, brazing material can be bridged between two kinds of completely different atmosphere, two kinds of completely different atmosphere Can there is a problem of for existing brazing material serious.On the first surface of linking part, brazing material may require that with The processing just carried out is compatible, and there are environment 77 in the semiconductor process chamber that will use the ceramic component of connection.Linking On the second surface in portion, brazing material may require that compatible from different atmosphere 76, and atmosphere 76 can be oxygen-containing atmosphere.With ceramics one It acts the existing brazing material used and is not met by the two criterion.For example, cupric, argentiferous or the soldering element containing gold can interfere Just in room with the lattice structure of the processed together silicon wafer of ceramics of connection, to be unsuitable.However, in certain situations Under, the surface of the linking part of soldering can face the oxygen-containing atmosphere of high temperature.Soldering linking part incites somebody to action the part for being exposed to the atmosphere Oxidation, and can inwardly be oxidized in linking part, cause the leakproofness of linking part to fail.It, will be half other than structure attaching Even if the linking part between the ceramic member of connection used in conductor manufacture is not in most of or whole usages be it is airtight, It also must be airtight in many usages.
When seeing that the atmosphere of above two type is in two sides across linking part in this device, will with it is above two The compatible brazing material of the atmosphere of type is aluminium.Aluminium has the characteristic from limiting layer for the aluminium for forming oxidation.The layer is usually equal Matter, and once being formed, just prevent or obviously limit additional oxygen or other oxidation chemistry compositions (this fluorine chemistry composition) It penetrates base aluminium and prevents from or obviously limit to continue oxidation process.In this way, when the oxidation or corrosion of aluminium have initial transient Phase, the oxidation or corrosion of the aluminium are then stopped by oxide (or fluoride) layer on the surface for having been formed in aluminium substantially Only or slow down.Brazing material can have sheet material, powder, film form or be suitable for it is as described herein soldering processing The form of any other formative factor.For example, brazing layer, which can be, to be had from 0.00019 inch to 0.011 inch or bigger In the range of thickness.In certain embodiments, brazing material can be the sheet material of the thickness with about 0.0012 inch.? In some embodiments, brazing material can be the sheet material of the thickness with about 0.006 inch.Typically, the alloy in aluminium at (for example, magnesium) is divided to be formed as the sediment between the crystal boundary of aluminium.Although the alloying component in aluminium can reduce aluminium adhesive layer Antioxygenic property, but typically these sediments do not form the continuous path by aluminium, thus do not allow oxidant to penetrate Full aluminium layer, and thus leave complete aluminium from restricted oxide layer feature, this feature provides corrosion resistance for aluminium.Make With in the embodiment of aluminium alloy, the aluminium alloy contains the ingredient that can form sediment, the processing including cooling agreement Parameter will be suitable for minimizing the sediment in grain boundary.For example, in one embodiment, brazing material, which can be, to be had extremely The aluminium of few 99.5% purity.In some embodiments it is possible to using it is commercially available can have it is pure greater than 92% The aluminium foil of degree.In certain embodiments, using alloy.These alloys may include: the Al containing 5w%Zr, contain 5w%Ti's Al, commercial alloy #7005, #5083 and #7075.In certain embodiments, these alloys can be under 1100 DEG C of junction temperatures It uses.In certain embodiments, these alloys can be used at a temperature of between 800 DEG C and 1200 DEG C.In certain realities It applies in example, these alloys can use at lower or higher temperature.
Embodiment according to the present invention under processing conditions AlN the insensitivity spread together with aluminium is made in plate and The material property and material property of ceramics are protected in the manufacture of shaft assembly after soldering processes.
In certain embodiments, connection processing is executed in the process chamber for being adapted to provide for low-down pressure.According to this hair Requirement is comprehended in the junction of bright embodiment does not have oxygen, to realize hermetically sealed linking part.In certain embodiments, small Processing is executed under the pressure of 1x10E-4 support.In certain embodiments, processing is executed under the pressure for being less than 1x10E-5 support.? In some embodiments, further deoxygenation is realized and placing zirconium or titanium in the process chamber.For example, part to be linked can be surrounded Place zirconium interior room.
In some embodiments it is possible to gas-tight seal to realize using the atmosphere other than vacuum.In some embodiments In, argon (Ar) atmosphere can be used to realize airtight linking part.In certain embodiments, using other rare gas to realize gas Close linking part.In certain embodiments, hydrogen (H2) atmosphere can be used to implement airtight linking part.
Getting wet for brazing layer can be sensitive to various factors with flowing.The factor of care includes: brazing material ingredient, ceramics at Point, the chemical component of the atmosphere in process chamber, the especially oxygen level during connection processing in room, temperature, at a temperature of time, The thickness of brazing material, the surface characteristics of material to be linked, the geometry of part to be linked cross during connection processing The physical pressure that linking part is applied, and/or the linking part gap maintained during connection processing.
In certain embodiments, before being placed into ceramic member in the room for being used for linking, ceramic surface can be undergone Metallization.In certain embodiments, metallization can be frictional metal.Frictional metal may include using aluminium bar.Rotation Tool can be used for making aluminium bar spin the overlying regions adjacent with brazing layer when part links.Frictional metal step can be with Some aluminium are left in the surface of ceramic member.Frictional metal step for example can slightly be changed by removing certain oxides Ceramic surface, to make surface preferably be suitable for getting wet brazing material.
The example of method for welding for the first ceramic bodies and the second ceramic bodies to link together may include with Lower step: the first object and the second object are put together, and soldering is arranged between the first ceramic bodies and the second ceramic bodies Layer, the brazing layer are selected from the group that aluminium and aluminium alloy are constituted；Brazing layer is heated to at least 800 DEG C of temperature；And it will Brazing layer is cool below the temperature of its fusing point, to make brazing layer be hardened and to generate gas-tight seal, thus by the first structure Part is attached to second component.It can implement the various geometries of soldering linking part according to method described herein.
Connection according to certain embodiments of the present invention processing may comprise steps of in some or all.Selection two A or more ceramic member is for linking.In some embodiments it is possible to use multiple connections in same set of processing step Multiple of layer connection, but for clarity of discussion, it is shown herein and links two ceramic members by single binder couse.Ceramics Part can be aluminium nitride.Ceramic member can be monocrystalline or polycrystalline aluminum nitride.Each is regarded as in each part The region that will link with another part.In the example shown, the part of the bottom of ceramic wafer structure will be attached to ceramic hollow Columnar structured top.Connecting material can be the brazing layer including aluminium.In certain embodiments, brazing layer, which can be, has The commercially available aluminium foil of > 99% aluminium content.In certain embodiments, brazing layer can be made of multiple layers of foil.
In certain embodiments, certain surface areas to be linked will undergo pre-metallization step.The pre-metallization step It can realize in various ways.In one approach, using using the friction pre-metallization of material bar to handle, the material bar can To be 6061 aluminium alloys, the material bar can spin by rotation tool and be compressed against ceramics in linking part region On, to deposit to certain aluminium on each of two ceramic members in the region of linking part.In another approach, PVD, CVD, plating, plasma spray or other methods can be used for applying pre-metallization.
Before connection, two parts are held to maintain certain position controls in the process chamber when can be relative to each other. Fixed may also help in applies the load applied from outside across linking part during applying temperature to generate between two parts Contact pressure.It can be placed with weight body, on the top of fixing piece to apply contact pressure across linking part.Weight body can be with It is proportional to the area of brazing layer.In some embodiments it is possible to by contact pressure in the range of about 2psi to 500psi It is applied on linking part contact area across linking part.In certain embodiments, contact pressure may be at 2psi to 40psi's In range.In some embodiments it is possible to use minimum pressure.Contact pressure used at the step is significantly less than and makes The contact pressure seen in the connecting step such as hot pressurization/sintering seen in existing processing, existing processing can make Pressure in the range of 2000psi to 3000psi.
Table top is being used as in the embodiment of support, such as referring to Fig. 8, the original thickness of the brazing layer before heat application is greater than The height of table top.As brazing layer temperature reaches and exceeds liquidus temperature, the pressure of the brazing layer between the part just linked Power will cause relative motion between part, until interface surface on deck contact second on first.At this On point, across linking part contact pressure will no longer by external force (other than as the resistance of the repulsive force in brazing layer, if If having) supply.Table top can prevent from extruding brazing layer from linking part region before ceramic member is got wet completely, and thus can To allow preferably and/or fully to get wet during connection is handled.In certain embodiments, table top is not used.
Fixation kit can be then placed in treatment furnace.Furnace can be evacuated to the pressure less than 5x10E-5 support.At certain In a little aspects, residual oxygen is removed in vacuo.In certain embodiments, using the vacuum for being less than 1x10E-5 support.In some embodiments In, fixation kit is placed on interior in the zirconium as oxygen attractant, is further reduced residual oxygen, otherwise residual oxygen may handled Period finds the path towards linking part.In certain embodiments, the rare gas of such as argon gas of the pure dehydration for the treatment of furnace is net Change and refills with deoxygenation.In certain embodiments, treatment furnace purifying hydrogen is purified and is refilled with deoxygenation.
Fixation kit is then enhanced temperature, and is maintained under junction temperatures.When beginning to warm up circulation, temperature can example 200 DEG C are slowly such as increased to 15 DEG C of rates per minute, and is then hereafter increased to example with 20 DEG C of rates per minute Such as 600 DEG C of normal temperature and junction temperatures, and in the case where fixed residence time is maintained at each temperature to allow heating Restore vacuum, later so as to by gradient minimisation and/or for other reasons.It, can be in reality when having reached brazing temperature The time for being now brazed reaction keeps temperature.In the exemplary embodiment, resident temperature can be 800 DEG C, and residence time can To be 2 hours.In another exemplary embodiment, resident temperature can be 1000 DEG C, and residence time can be 15 points Clock.In another exemplary embodiment, resident temperature can be 1150 DEG C, and residence time can be 30 minutes to 45 points Clock.In certain embodiments, it is resident maximum temperature and is no more than 1200 DEG C.In certain embodiments, resident maximum temperature is no more than 1300℃.When obtaining enough soldering residence times, when intrinsic stove cooling rate is lower, stove can be every with 20 DEG C Minute or lower rate are cooled to room temperature.Stove can achieve atmospheric pressure, and stove is opened, and can remove brazed assembly To be used to check, feature describes and/or assessment.
Using too high temperature, using the too long of time, the shape in binder couse can be led to due to significant aluminum evaporation At gap.With gap is formed in binder couse, the leakproofness of linking part can be lost.Treatment temperature and treatment temperature it is lasting when Between can be controlled such that aluminium layer is not vaporized and to realize airtight linking part.In addition to above-mentioned other processing parameters In addition, by temperature appropriate and the control of processing duration, continuous linking part can be formed.According to reality as described herein The continuous linking part for applying example realization will be so that component has gas-tight seal and structure attaching.
Brazing material will flow and the surface for the ceramic material for making just linking be allowed for get wet.When use aluminum brazing layer When linking the ceramics of such as aluminium nitride and there is low-level oxygen enough as described, linking part is airtight soldering Linking part.This mutually withstands diffusion bonding with diffusion bonding seen in certain existing ceramic bonds processing instead.
In certain embodiments, part to be linked may be configured so that during soldering without applying pressure across brazing layer Power.For example, column or axis can be placed into the countersunk or recessed portion in mesh piece.Countersunk can be greater than the shape of column or axis Size.This can produce the region around column or axis, and the region can then be filled with aluminum or aluminum alloy.In this case, The pressure applied between two parts to maintain two parts during connection can be without generating any pressure across brazing layer Power.Each is maintained in preferred end position moreover, can also be able to use fixture, it is micro- to apply between two parts Small pressure does not apply pressure.
By between the part in connection it is gas-tight seal and make connection part form the connection assembly linked as described above.So Afterwards, in the case where gas isolating is the importance in component use, it is able to use this component.In addition, for example, linking part With the part that can be exposed to various atmosphere when later in semiconductor processes using connection assembly, the portion of the linking part Dividing will not deteriorate under such atmosphere, also not pollute later semiconductor processes.
Both airtight linking part and non-hermetically sealed linking part can be hard in the case where needing significantly big power separation member Admittedly link the part.However, not determine whether linking part provides gas-tight seal for the firmer fact of linking part.It obtains airtight The ability of linking part can be related to getting wet for linking part.Get wet illustrate ability that liquid is dispersed throughout on the surface of another material or Trend.If do not got wet enough in the linking part of soldering, there will be unbonded region in the linking part of soldering.If There is the region not got wet enough, then gas can pass through linking part, cause to leak.Different phase in the melting of brazing material Under, get wet the pressure influence that will receive across linking part.Linking part can be enhanced in the use of table top support or other stand apparatus Region get wet, other stand apparatus be, for example, be inserted into have appropriate diameter Ceramic Balls or powder particle with limit soldering Layer compression is more than a certain minimum range.It can be with to the Cautious control of atmosphere by be brazed that element seen during connection processing The region of enhancing linking part is got wet.In combination, used to the Cautious control of linking part thickness and to gas during processing The Cautious control of atmosphere can to get wet completely by other processing from the linking part interface area got wet.In addition, having than platform The brazing layer of the big suitable thickness of face height of support and other reference factors are pulled together using available particularly well to get wet Airtight linking part although various binder couse thickness can succeed there is the binder couse of the thickness increased company can be improved The success rate of the airtight aspect of knot.
The acoustic imaging of linking part is allowed for the uniformity for observing linking part and for determining to whether there is in linking part Gap and/or access.If obtained linking part image is verified as leakproofness, then uniform void-free connection is shown Portion, and if the image of linking part is verified as non-hermetic, then the gap that is shown as in the area of Ceramic brazing bed boundary or compared with Big non-bonded region.In the example seen in acoustic image, ring has been adhered to flat surfaces.Ring typically has 1.40 inches Outer diameter, 1.183 inches of internal diameter, linking part interface area have about 0.44 square inch.For example, the bonding of ring and flat surfaces is The illustration of the connection of hollow shaft and plate can such as be seen in the component of heater.
Figure 10 is to use image obtained from acoustics sensor to the linking part integrality of the linking part generated according to the present invention. Linking part is between the part of two polycrystalline aluminum nitrides.Soldering layer material is three layers, and each of described three layers are tools Having 0.0006, " 99.8% aluminium foil of thickness, this is mutually echoed with the frictional metal step of 6061 aluminium alloys is used.Junction temperatures It is 1100 DEG C, is kept for 45 minutes.Linked in the zirconium box being maintained in the process chamber being less than under the pressure of 1x10E-5 support. Without using support.The image shows the position for getting wet ceramics well with filled black.The instruction of white/light colored region is in ceramics Gap at connected surfaces.Obviously, linking part has preferable sufficient integrality.The linking part is airtight.Leakproofness is logical Crossing the vacuum leak rate with < 1x10E-9sccm He/s confirms；Such as tested by the commercially available mass spectrograph helium leak check instrument of standard Card.
Figure 11 is to use image obtained from acoustics sensor to the linking part integrality of the linking part generated according to the present invention. Linking part is between the part of two polycrystalline aluminum nitrides.Brazing material is two layers, and described two layers are by using 6061 aluminium 99.8% aluminium foil that the frictional metal step of alloy obtains.Junction temperatures are 1100 DEG C, are kept for 45 minutes.It is small being maintained at Linked in the zirconium box in process chamber under the pressure of 1x10E-5 support.The image filled black, which is shown, keeps ceramics good The position got wet.Gap of the white/light colored region instruction at the connected surfaces of ceramics.Obviously, linking part has and preferably fills The integrality divided.The linking part is airtight.
Figure 12 is to use image obtained from acoustics sensor to the linking part integrality of linking part.Linking part is in more than two Between the part of crystalline aluminum nitride.Brazing material is three layers, and three layers are 99.8% without using frictional metal step Aluminium foil.Junction temperatures are 1100 DEG C, are kept for 45 minutes.In the zirconium being maintained in the process chamber being less than under the pressure of 1x10E-5 support Linked in box.The image shows the position for getting wet ceramics well with filled black.White/light colored region is indicated in ceramics Connected surfaces at gap.Obviously, linking part has integrality.The linking part is airtight.It will be appreciated, however, that certain Void area is close together from each side.Linking part maintains airtight integrality, but with above-mentioned frictional metal The case where compared to apparent more gaps.
Figure 13 is to use image obtained from acoustics sensor to the linking part integrality of linking part.Linking part is in more than two Between the part of crystalline aluminum nitride.In the linking part, minimum linking part thickness is maintained using table top support.Three table tops are in circle On shaft element.Table top has 0.004 inch of height.Brazing material is > 99% aluminium.Brazing layer has before the brazing 0.006 inch of thickness.Junction temperatures are 1200 DEG C, are kept for 30 minutes.It is being maintained at the place being less than under the pressure of 1x10E-5 support Reason is linked in room.18 pounds of the load applied is used to apply pressure across linking part.Support prevents linking part thickness from becoming It obtains and is less than height of support.Using a set of support table top, getting wet for linking part is counted as better than the prior art Linking part seen in linking part image is got wet.Linking part is got wet completely, and does not have gap.The linking part is airtight 's.Use support table top to generate minimum linking part thickness in tandem with high vacuum, this makes linking part prove have by acoustic image There is very high quality.The position of three support table tops is indicated by three points of distribution see in linking part, radially equidistant.
Figure 14 is to use image obtained from acoustics sensor to the linking part integrality of linking part.Linking part is in more than two Between the part of crystalline aluminum nitride.Brazing material is two layers, and described two layers are 99.8% without using frictional metal step Aluminium foil.The uncertain minimum linking part thickness of support.Junction temperatures are 1100 DEG C, are kept for 45 minutes.It is less than 1x10E-5 being maintained at Linked in zirconium box in process chamber under the pressure of support.The image shows the position for getting wet ceramics well with filled black It sets.Gap of the white/light colored region instruction at the connected surfaces of ceramics.The linking part is not airtight.The brazing layer is thinner than Brazing layer in the example of Figure 12.As described above, the thickness of brazing material is to determine whether connection processing will reliably generate gas One of factor of linking part of sealing.
Figure 15 is to use image obtained from acoustics sensor to the linking part integrality of linking part.Linking part is in more than two Between the part of crystalline aluminum nitride.Brazing material is three layers, and three layers are closed without using 7075 aluminium of frictional metal step Goldleaf.Junction temperatures are 1100 DEG C, are kept for 45 minutes.In being maintained at the process chamber being less than under the pressure of 1x10E-5 support, do not make Linked with zirconium box.The image shows the position for getting wet ceramics well with filled black.The instruction of white/light colored region is being made pottery Gap at the connected surfaces of porcelain.The linking part is airtight, but sees the diversity in gap.As described above, at a temperature of The oxygen amount that can be used for linking part is to determine whether connection processing will reliably generate one of the factor of hermetically sealed linking part.Figure 14 and Figure 15 be even under high vacuum using it is multiple for soldering thin layers and without the processing of support table top understand how Lead to the example unevenly got wet.Although linking part be it is airtight, the shortage and a large amount of gaps got wet indicates the processing side Method cannot be brazed element using single part as reliably as possible.In contrast, Figure 13, which is shown, is using support table top, single part pricker That sees in the case where weldering element and high vacuum atmosphere gets wet completely.
Figure 16 is to use image obtained from acoustics sensor to the linking part integrality of linking part.Linking part is in more than two Between the part of crystalline aluminum nitride.In the linking part, minimum linking part thickness is maintained using table top support.Three table tops are in circle On shaft element.Table top has 0.004 inch of height.Brazing material is > 99% aluminium.Brazing layer has before the brazing 0.006 inch of thickness.Junction temperatures are 1150 DEG C, are kept for 30 minutes.Keeping place under atmospheric pressure in an argon atmosphere Reason is linked in room.The argon gas supplied has 99.999% purity, and dehumidifier is passed through before entering process chamber. The flow of several slm (standard liter per minute) is used during soldering processing.Support prevents linking part thickness from becoming smaller than branch seat height Degree.Using a set of support table top, the getting wet of linking part is counted as highly uniform and complete.Three supports The position of table top is indicated by three points of distribution see in linking part, radially equidistant.Linking part is got wet completely, and almost There is no gap.The linking part is airtight.Use support table top to generate minimum linking part thickness in tandem with high-purity argon gas, this So that linking part proves there is very high quality by acoustic image.
Figure 17 is to use image obtained from acoustics sensor to the linking part integrality of linking part.Linking part is in more than two Between the part of crystalline aluminum nitride.In the linking part, minimum linking part thickness is maintained using table top support.Three table tops are in circle On shaft element.Table top has 0.004 inch of height.Brazing material is > 99% aluminium.Brazing layer has before the brazing 0.006 inch of thickness.Junction temperatures are 1150 DEG C, are kept for 30 minutes.Keeping place under atmospheric pressure in the hydrogen gas atmosphere Reason is linked in room.The hydrogen supplied has 99.999% purity, and purification is also passed through before entering process chamber Device.The flow of several slm is used during soldering processing.Support prevents linking part thickness from becoming smaller than height of support.Three supports The position of table top is indicated by three points of distribution see in linking part, radially equidistant.In the feelings using a set of support table top Under condition, the getting wet of linking part is counted as highly uniform and complete.Linking part is got wet completely, and almost without gap. The linking part is airtight.Use support table top to generate minimum linking part thickness in tandem with high-purity hydrogen, this to link Portion proves there is very high quality by acoustic image.
Figure 18 is to use image obtained from acoustics sensor to the linking part integrality of linking part.Linking part is in more than two Between the part of crystalline aluminum nitride.In the linking part, minimum linking part thickness is maintained using table top support.Three table tops are in circle On shaft element.Table top has 0.004 inch of height.Brazing material is > 99% aluminium.Brazing layer has before the brazing 0.006 inch of thickness.Junction temperatures are 1150 DEG C, are kept for 30 minutes.Place under atmospheric pressure is being kept in nitrogen environment Reason is linked in room.The nitrogen supplied has 99.999% purity.The flow of several slm is used during soldering processing. Support prevents linking part thickness from becoming smaller than height of support.In this case, linking part get wet be counted as it is non-uniform and It is incomplete.Linking part is not exclusively got wet, and has apparent gap.The linking part is not airtight.High pure nitrogen makes With causing linking part to prove no very high quality by the acoustic image of vacuum, argon gas and hydrogen.
Figure 19 is to use image obtained from acoustics sensor to the linking part integrality of linking part.Linking part is in more than two Between the part of crystalline aluminum nitride.In the linking part, minimum linking part thickness is maintained using table top support.Three table tops are in circle On shaft element.Table top has 0.004 inch of height.Brazing material is > 99% aluminium.Brazing layer has before the brazing 0.006 inch of thickness.Junction temperatures are 1100 DEG C, are kept for 30 minutes.Atmosphere is being maintained in regular air atmosphere Linked in the process chamber of pressure.Support prevents linking part thickness from becoming smaller than height of support.In this case, linking part Get wet be counted as it is non-uniform and incomplete.Linking part is not exclusively got wet, and has apparent gap.The linking part is not It is airtight.The use of normal atmosphere causes linking part to prove no very high quality by the acoustic image of vacuum, argon gas and hydrogen.
Figure 18 (nitrogen) and 19 (air) are shown, using only support table top will not generate high quality, completely get wet, nothing Gap and airtight airtight linking part.Figure 13 (higher vacuum) is shown, and is generated using support table top and higher vacuum high Quality, getting wet completely, void-free and airtight airtight linking part.Aluminium is used as brazing layer and using according to the present invention So that component in high quality, airtightly links, the component is outstanding for the processing parameter of embodiment, lower temperature connection processing It is ceramic component.The processing of embodiment according to the present invention is allowed for the connection of low cost, high quality ceramic component, And also it is allowed for that the time of component afterwards being disintegrated according to expectation.Figure 16 (argon gas) and 17 (hydrogen) are shown, if gas Atmosphere is careful and is properly controlled, then antivacuum to handle the airtight linking part that can produce high quality.In this reality It applies in example, such as non-oxidized gas of hydrogen or high-purity rare gas is used to replace the oxygen and nitrogen in room.
Existing a large amount of oxygen or nitrogen can generate reaction during soldering processing, and the reaction interferes linking part interface Area is got wet completely, and it is airtight that this, which then will lead to linking part not,.In the case where getting wet completely, the non-area that gets wet is in linking part circle It is introduced into the area of face in final linking part.When introduce it is a large amount of continuous it is non-get wet area when, the leakproofness loss of linking part.
The presence of nitrogen will lead to nitrogen and react with the aluminium of melting and form aluminium nitride, and reaction formation can interfere Linking part interface area is got wet.Similarly, the presence of oxygen will lead to oxygen and react with the aluminium of melting and form aluminium oxide, and Reaction formation can interfere linking part interface area to get wet.Use the vacuum atmosphere for the pressure for being less than 5x10-5 support, it has been shown that It is allowed for getting wet linking part interface area strongly completely through removing enough oxygen and nitrogen, and forms airtight connection Portion.In certain embodiments, using the higher pressure including atmospheric pressure, but for example in process chamber during soldering processes It is middle to use the non-oxidized gas of such as hydrogen or the rare gas of such as argon gas, become linking part interface area strongly It is wet, and form airtight linking part.Oxygen in order to avoid the reaction of above-mentioned oxygen, during soldering processing in the process chamber Tolerance must be lacked enough, not negatively affect getting wet completely for linking part interface area.In order to avoid above-mentioned nitrogen Reaction, the nitrogen amount during soldering processing in the process chamber must lack enough, not negatively affect linking part interface Area is got wet completely.
It selects the appropriate atmosphere during soldering processing and is combined with the minimum linking part thickness of maintenance, be can permit in this way For getting wet linking part completely.It bad get wet on the contrary, inappropriate atmosphere is selected to will lead to, generate gap and cause non- Airtight linking part.The appropriately combined of controlled atmosphere and controlled linking part thickness selects and is brazed the phase together with suitable material Between temperature be allowed for together by airtight linking part connecting material.
Another advantage of linking method as described herein is, links made of some embodiments according to the present invention Portion can permit for being dismantled component to repair or replace one in two components according to expectation.Because connection processing does not have Ceramic member is modified since binder couse is diffused into ceramics, so that ceramic member can be easily reused.
The existing method using ceramic material manufacture component (for example, heater and electrostatic chuck) is needed in dedicated atmosphere Processing step is carried out under (for example, vacuum, inert gas or reducing atmosphere), very high temperature and very high contact pressure Suddenly.Press application can be used in contact pressure, and these press may be adapted to operate in inner treatment chamber, and the process chamber mentions Dedicated atmosphere for such as vacuum and there is higher temperature.This can need the press of profession in process chamber and by such as stone Fixture made of the refractory material of ink.These equipment can have very high cost and complexity.In addition, it is necessary to pressurized portion Part is bigger, and the component that can be put into this treatment furnace is fewer.Due in treatment furnace by the duration of the processing of press It can be calculated with day, and it has been known that there is a large amount of expenses associated with the operation for the treatment of furnace/press and two aspect of manufacture, so using The treatment furnace that very high temperature, dedicated atmosphere and very high contact pressure are provided during manufacturing component reduces step Quantity will realize significant save.
Figure 20 shows the exemplary panels shaft device 100 in semiconductor processes, for example, heater.In certain aspects, Board shaft device 100 is made of the ceramics of such as aluminium nitride.Heater has axis 101, the axis 101 then support plate 102.Plate 102 With top surface 103.Axis 101 can be hollow cylinder.Plate 102 can be square position.There may be have other subassemblies.At certain In the processing of invention, plate 102 can manufacture eachly in the initial treatment for being related to treatment furnace, and pottery is formed in the treatment furnace Porcelain plate.
Figure 21 conceptually shows the treatment furnace 120 with press 121.Plate 122 can at a temperature of be compressed in fixture 123 In, the fixture 123 is suitable for being pressurizeed by press 121.Axis 101 can also be similarly produced in processing step.Typical In processing, plate and axis are formed by following steps: the aluminium nitride powder containing sintering aid being loaded into mold, the sintering Auxiliary agent is, for example, the yttrium oxide of about 4 weight %；Then, aluminium nitride powder is compacted to " solid " state, be typically called " raw (green) " ceramic；Then, high-temperature liquid-phase sintering processes are carried out, which makes aluminium nitride powder density and form solid ceramic sheet Body.High-temperature liquid-phase sintering processes can see, and temperature is in the range of 1700 DEG C and contact pressure is in the model of 2500psi In enclosing.Then, ceramic body is required geometry by using shape depending on the standard milling techniques of diamond abrasive.
Axis has multiple functions: a function is to provide vacuum-tight telecommunication by the wall of vacuum chamber, so as to will be electric Power is applied to heating element and is applied to the electrode for the various other types that can be embedded in heater plates.Another function Can allow using the monitoring device of such as thermocouple come to heater plates temperature monitoring, and thermocouple is allowed to be placed in process chamber Outside such as corrode, and allow to interact between the material that avoids the material of thermocouple and handle chemicals Thermocouple junction is operated in non-vacuum environment for quick response.Another function will be used for above-mentioned telecommunication Material is isolated with processing environment.Material for telecommunication is typically metal material, and the metal material is it is possible thereby to this The mode of sample and the processing chemicals interaction used in processing environment, that is, the mode is to be unfavorable for processing knot Fruit and be unfavorable for metal material for telecommunication service life mode.
The flatter property of known plate can pass through the axial direction by multiple plate mold fixtures 143 along press 141 Lamination and form multiple plates 142 in single processing, the press 141 is placed in treatment furnace 140, such as conceptually referring to fig. 22. It can also be using forming axis in being processed similarly of the press in treatment furnace.
Manufacture be used in semiconductor processes in heater it is entire processing in, formed plate the step of and formation axis the step of Two steps need the important time to promise to undertake and energy promise.The cost of known proprietary high temperature furnace, and because form the place of plate Reason step and each of the processing step for forming axis may require that, using dedicated processes furnace several days, considerable time and money is thrown Entering just to put into makes whole process reach the degree for having completed axis and plate.It needs in processing of the invention dedicated Another step in treatment furnace is to secure the plate to axis.The example of the step will be in the special-purpose high temperature treatment furnace with press Axis is attached to plate using liquid-phase sintering step.The third step in dedicated processes furnace also needs in this treatment furnace greatly Quantity space, this is because the assembled configuration of heater includes the length of axis and two aspect of diameter of plate.Although only the manufacture of axis can To obtain the axial length of similar quantity, but the diameter of axis generates multiple axis concurrently with single processing.
Such as referring to fig. 23, the connection for axis to be sintered to plate, which is handled, to be also required to using the treatment furnace with press 161 160.One sleeve clamp 164,165 is used for positioning plate 162 and axis 163, and for transmitting the pressure conveyed by press 161.
Once heater is completed, then heater can be used in semiconductor processes.Heater may be in exacting terms Lower use, the exacting terms include corrosive gas, high temperature, thermal cycle and gaseous plasma.In addition, heater can be with It is subjected to accidental impact.If plate or axis become to damage, then limit for repairing by the board shaft device of liquid-phase sintering connection Perhaps, such chance is not present in chance.
Another is existing for being related to the method that ceramic shaft is attached to ceramic wafer that axis is bolted to plate.Even in adjoining In the case that surface is polished to enhance airtight quality, such system is also not airtight.It is needed in the inside of axis constant , positive, purge gas pressure with reduce processing gas infiltration.
A kind of improved method for manufacturing semiconductor processing equipment can be related to, not in high temperature and high contact pressure Above-mentioned axis and plate are attached to final connection assembly in the case where additional liquid sintering step under power, time-consuming and expensive In.Axis and plate can link by the method for welding for linking ceramics.
Figure 24 shows the cross-sectional view of the embodiment of linking part, and the first ceramic bodies can be attached to second in this embodiment Ceramic bodies, first ceramic bodies for example can be ceramic shaft 181, and second ceramic bodies can be by identical material Or different materials is made, and second ceramic bodies for example can be ceramic wafer 182.It can be related to such soldering to fill out Expect material 180, that is, the soldering filler material 180 can be selected from the combination of brazing material as described herein or adhesive, And linking part can be transported to according to method described herein.The linking part shown in Figure 24, axis 181 are located so that 181 adjacent plate of axis, is only plugged with soldering filler between surface to be linked, and the surface to be linked is, for example, axis 181 The end face 183 of end 185 and the interface surface 184 of plate 182.In order to clearly show, the thickness of linking part is exaggerated.
Figure 25 shows the cross-sectional view of the second embodiment of linking part, and the first ceramic bodies can be in the second embodiment It is attached to the second ceramic bodies, first ceramic bodies for example can be ceramic shaft 191, and second ceramic bodies can be by Identical material or different materials are made, and second ceramic bodies for example can be ceramic wafer 192.It can be related to all Such as the connecting material of brazing layer 190, the connecting material can be selected from the combination of brazing material as described herein or adhesive It selects, and linking part can be transported to according to method described herein.In certain aspects, plate can be aluminium nitride, and axis It can be zirconium oxide, aluminium oxide or other ceramics.In certain aspects, in certain embodiments, it may be desirable to be using having The shaft material of lower conduction heat transfer coefficient.
The linking part shown in Figure 25, axis 191 is located so that 191 adjacent plate of axis, between surface to be linked It is only plugged with brazing layer, the surface to be linked is, for example, the surface 193 of axis and the surface 194 of plate.The interface surface of plate 192 194 can be placed in the recessed portion 195 in plate.In order to clearly show, the thickness of linking part is exaggerated.
The embodiment as shown in Figure 24 and Figure 25 may include multiple supports, and the multiple support is suitable for maintaining minimum pricker Layer thickness.In certain embodiments, such as referring to fig. 26, axis 191 can use multiple table tops on the end of axis 191 172 171, the axis 191 plate to be attached to.Table top 171 can be a part with the structure that axis 191 is same structure, and can be with Table top is left and machining away structure from axis to be formed.In certain embodiments, table top can be used for the mating surface from plate Generate the minimum brazing layer thickness of the residue of shaft end 172.In certain embodiments, soldering filler material before the brazing will be thick In by the maintained distance of table top between shaft end and plate.By the interface surface of interface surface and axis and table top to plate The board shaft device to completion may be implemented as table top is moved to contact board interface in appropriate allowance control, the step during soldering Allowance control.In certain embodiments, other methods can be used for setting up minimum brazing layer thickness.In some embodiments In, Ceramic Balls can be used for setting up minimum brazing layer thickness.
Such as referring to fig. 27, brazing material can be bridged between two kinds of completely different atmosphere, two kinds of completely different gas Atmosphere can there is a problem of serious for existing brazing material.In the outer of such as semiconductor processing equipment of heater 205 On surface 207, brazing material must be compatible with the processing just carried out, and in the semiconductor process chamber that will use heater 205 There are environment 201 in 200.Heater 205 can have the substrate 206 of the top surface fixed to plate 203, and the plate 203 is by axis 204 Support.On the inner surface 208 of heater 205, soldering layer material must be compatible from different atmosphere 202, and the atmosphere 202 can To be oxygen-containing atmosphere.The existing brazing material being used together with ceramics is not met by the two criterion.For example, cupric, argentiferous Or the soldering element containing gold can interfere the lattice structure of silicon wafer being processed, to be unsuitable.However, linking in soldering In the case that heater plates are attached to heater axis by portion, the inside of axis usually faces high temperature, and the inside of axis is in hollow shaft Center in have oxygen-containing atmosphere.Soldering linking part will aoxidize the part for being exposed to the atmosphere, and can inwardly be oxidized to In linking part, the leakproofness of linking part is caused to fail.Other than structure attaching, these that will be used in semiconductor fabrication are filled Even if it is airtight that the linking part between the axis and plate set, which is not in most of or whole usages, it is also necessary in many usages It is airtight.
In the exemplary embodiment, both plate and axis can be aluminium nitride, and the two uses liquid-phase sintering in advance Processing is individually formed.In certain embodiments, plate can have about 9 inches to 13 inches of diameter and 0.5 inch to 0.75 The thickness of inch.Axis can be hollow cylinder, and with 5 inches to 10 inches of length, the thickness of wall is 0.1 inch.Plate can With recessed portion, outer surface of the recessed portion suitable for the first end of receiving axis.Such as referring to fig. 26, table top be can reside in On the end adjacent with plate of axis.Table top can have 0.004 inch of height.Plate and axis can be fixed together for connecting Step is tied, the brazing material of aluminium foil is placed in the recessed portion of plate between part along the end of axis.Brazing material is in soldering Before can have 0.006 inch of thickness, the linking part minimum thickness of completion is 0.004 inch.Brazing material, which can be, to be had The aluminium of 0.4Wt%Fe.
Figure 28 shows linking part 220 according to certain embodiments of the present invention, is used to plate 215 being attached to axis 214.Even Knot 220 has generated the airtight linking part of structuring, and support plate 215 is attached to axis 214 in structure.Linking part 220 Generate airtight sealing, it is described airtight to be sealed in the axis atmosphere that seen by the inner surface 218 of axis 214 in process chamber The 212 room atmosphere 211 seen with the outer surface 217 along axis 214 are isolated.Linking part 220 can be exposed to axis atmosphere and room gas Both atmosphere, and therefore allow for withstanding this exposure in the case where no deterioration, the deterioration will lead to airtight Loss of seal.In this embodiment, linking part can be aluminium, and plate and axis can be the ceramics of such as aluminium nitride.Certain In embodiment, linking part 220 can be aluminium, and aluminium remains substantially in linking part area after connection processing.Residual Al can To be allowed for making linking part to disintegrate for repairing, doing over again or other reasons.
Figure 29 is shown schematically in one embodiment of heater column used in semiconductor process chamber.Heater 300 It can be ceramic heater, heater 300 may include radio-frequency antenna 310, heating element 320, axis 330, plate 340 and installation Flange 350.As follows, the axis can be implemented in one embodiment of method for welding for axis 330 and plate 340 to link together One or both of 330 and the plate 340 can be made to form heater 300 of aluminium nitride.
The sheet material of aluminum or aluminum alloy can be set between axis and plate, and axis and plate can be disposed with soldering in-between It puts together in the case where the sheet material of layer.Brazing layer can then be heated under vacuum at least 800 DEG C of temperature and by It is cool below 600 DEG C of temperature, axis is attached to the gas-tight seal of plate to make brazing layer be hardened and to generate.The heater Axis can be solid material or the axis of the heater can be hollow configuration.
The contact pressure of about 2psi to 200psi can be applied on linking part contact area by fixture.In some embodiments In, contact pressure may be in the range of 2psi to 40psi.Contact pressure used at the step is significantly less than and makes The contact pressure seen in the connecting step such as hot pressurization/sintering seen in existing processing, existing processing can make Pressure in the range of 2000psi to 3000psi.By the significantly reduced contact pressure of method of the invention, it is not required to Want the professional press of the above method.Simple fixture is able to use to provide for pressure needed for using this method that plate is attached to axis Power, the pressure may include the quality that is placed on fixture using gravity to provide contact pressure.In certain embodiments, exist Contact between the interface portion of axis and the interface portion for being brazed element and interface portion and the interface of soldering element in plate Contact between part will provide the contact pressure for being sufficient to connection.Accordingly, it is not necessary to by being separated with fixation kit itself Press work to fixation kit.Fixation kit can be then placed in treatment furnace.Furnace can be evacuated to 1x10E-5 support Pressure.In certain aspects, apply vacuum to remove residual oxygen, in certain embodiments, using true less than 1x10E-4 support It is empty.In certain embodiments, using the vacuum for being less than 1x10E-5 support.About the step it should be noted that for this of axis and plate company For knot, the high temperature furnace with the fixture of high contact pressure is not needed, the high temperature furnace is in manufacture ceramic component (axis and plate) Required for period.When for example maintaining minimum linking part thickness by using support, the contact pressure across linking part is only needed It is enough the interface area for allowing seating plane to adjacent ceramic.Very thin pricker is had between support and adjacent interface area The wlding bed of material, this is because will not fully erased liquid brazing material between support and adjacent interface area.
In certain embodiments, plate and axis may include different ceramics.Plate can be adapted to provide for higher thermal coefficient, and Axis can be adapted to provide for lower thermal coefficient, so as not to the installation accessory losses heat along axis towards process chamber.For example, plate can be with It is made of aluminium nitride, and axis can be made of zirconium oxide.
Figure 30 to Figure 32 shows connection processing according to certain embodiments of the present invention, that axis can be attached to plate.It can To operate low temperature than previous connection, operate low contact pressure than previous connection and than previous connection operation Low time and cost execute connection processing under promising to undertake in treatment furnace.
In certain embodiments, alignment and the position of axis and plate are such as maintained by component geometry structure referring to Figure 30, exclude Processing after fixed and bonding.Counterweight can be used to ensure that during adhesion process not in addition to brazing material melts certain Movement other than a little axial movements.Plate 400 can be by the recess in the top-down back side for being placed on plate 400 of link component 402 In portion 403.Axis 401 can be inserted into vertically downwardly in the recessed portion 403 of plate 400.Weight body 404 can be placed on axis 401 with Some contact pressures are provided during connection processing.
In certain embodiments, alignment and the position of axis and plate are such as maintained by component geometry structure referring to Figure 31, reduce Processing after bonding.Fixture be may require that maintain the up rightness between axis and plate during adhesion process.In certain implementations In example, it can be used for controlling the size and tolerance of final component to the allowance control of the interface portion of table top and plate.Counterweight can be with For ensuring the not movement other than certain axial movements with brazing material melts during adhesion process.Plate 410 can With will be in the recessed portion 413 in the top-down back side for being placed on plate 410 of link component 412.Axis 411 can be inserted vertically downwardly Enter in the recessed portion 413 of plate 410.Fixture 415 is suitable for support and locating shaft 411.Weight body 414 can be placed on axis 411 with Connection provides some contact pressures during handling.In certain embodiments, without using weight body.In certain embodiments, wait link The quality of project can provide power under gravity to apply pressure between project to be linked.
In certain embodiments, position and the up rightness of axillare are such as maintained by fixture referring to Figure 32.Fixture can be due to warm It expands with machining tolerance but inaccurately, therefore, it may be desirable to the processing after bonding.Shaft diameter will increase to adapt to required material Material removal requires to meet final size.Again, counterweight can be used to ensure that during adhesion process not in addition to soldering material Expect the movement other than certain axial movements of melting.Plate 420 can be by the top-down back for being placed on plate 420 of link component 422 Above face.Axis 421 can be placed on plate 420 to generate plate and axis pre-assembly.Fixture 425 is suitable for support and locating shaft 421.Folder Tool 425 can be typed to plate to provide position integrality.Weight body 424 can be placed on axis 411 to provide during connection is handled Some contact pressures.
When beginning to warm up circulation, temperature for example slowly can be increased to 200 DEG C with 15 DEG C of rates per minute, and after And such as 600 DEG C of normal temperature and junction temperatures is hereafter increased to 20 DEG C of rates per minute, and fixed resident Time is maintained to allow to restore vacuum after heating at each temperature, so as to by gradient minimisation and/or for other originals Cause.When having reached brazing temperature, temperature can be kept realizing the time of soldering reaction.In the exemplary embodiment, it stays Temperature is stayed to can be 800 DEG C, and residence time can be 2 hours.In another exemplary embodiment, resident temperature can be with It is 1000 DEG C, and residence time can be 15 minutes.In another exemplary embodiment, resident temperature can be 1150 DEG C, and residence time can be 30 minutes to 45 minutes.In certain embodiments, it is resident maximum temperature and is no more than 1200 DEG C. In certain embodiments, it is resident maximum temperature and is no more than 1300 DEG C.When obtaining enough soldering residence times, stove can be with 20 DEG C of rates per minute are cooled to room temperature, or when intrinsic stove cooling rate is lower, stove can be than 20 DEG C every point The lower rate of clock is cooled to room temperature.Stove can achieve atmospheric pressure, and stove is opened, and can remove brazed assembly with In inspection, feature description and/or assessment.
An aspect of of the present present invention be bonding axillare maximum operating temp, the maximum operating temp such as by for connect and The temperature of the aluminum or aluminum alloy of selection and its reduced tensile strength limit.For example, if fine aluminium is used as connecting material, axis The structural strength of bonding between plate becomes very low with the fusion temperature of the temperature approaches aluminium of linking part, the aluminium Fusion temperature is commonly considered as 660 DEG C.In fact, axillare component will be withstood when using the aluminium of 99.5% aluminium or purer All normal stress and expected stress encountered in the exemplary wafer handling implement for reaching 600 DEG C of temperature.However, certain A little semiconductor device manufacture processing need the temperature greater than 600 DEG C.
Another embodiment of the invention is seen in Figure 33.As has been publicly, aluminum or aluminum alloy material 400 can be used In axis 404 is attached to plate 405 in a gas tight manner.In addition, another connecting material 401 may be used as structure bond object to incite somebody to action The usable temp of axillare component extends to higher temperature, another described connecting material 401 both had the energy bonded with AlN Power, and there is the fusion temperature higher than the fusion temperature of the aluminium higher than 660 DEG C.For example, Ti-Ni alloy is verified in institute as above It states and is adhered to aluminium nitride at a temperature in the range of the tack temperature for aluminium.Also other titaniums and zircaloy can be used, in them Many contain silver, copper or gold as alloying element.Because these alloys have higher fusion temperature, these conjunctions The available temperature range of axillare component is extended to 700 DEG C or 800 DEG C or 900 DEG C by the use of gold.However, as described above, element Silver, copper or gold can be unfavorable for the crystal structure of chip, so must be isolated with processing environment to extreme care.With similar side Formula, when being exposed to air at a temperature of titanium and zirconium are usually used in chip processing, titanium and zirconium are easy adversely to aoxidize.It is a kind of Solution is using the aluminium " protection band " for surrounding structure conjoint material, and as needed, a band is arranged into processing side to prevent Unfavorable element moves to chip, and a band is arranged into atmosphere side to prevent titanium or zircon-structure binding from aoxidizing.Certain In embodiment, only there can be protection band on the inner or outer side of the linking part of other materials.In certain embodiments, connect with one heart Knot may be at different height, and reason is that the end of axis has multiple plateau, and connection is placed in the plateau Portion.
Such as referring to Figure 33, flange 403 is usually hermetically sealed process chamber base portion by elastomer o ring and (does not show Out).For heat or electrostatic clamp RF conduction or temperature monitoring electrical connection by axis center 407 in 406 Road of center By be connected to plate.Typically, electrical connection and axis center are in surrounding (air) environment.
After the step of plate is attached to axis, axis and/or plate can undergo further processing when completing finished parts.For It realizes for liquid-phase sintering necessary to needing the existing board shaft of typical case of mechanical strength to link, needs pressure, the pressure Pressure provided by size is completed higher than as the typical of heater axis, this is because component needs are withstood and handled with above-mentioned connection Elevated pressures it is associated more energetically.Therefore, in order to reduce the Cracking Failure during adhesion process, may use than The thicker ceramic section of ceramics section needed for ultimately constructed.Then it is obtained and grinding plate/shaft assembly of bonding after bonding To final required size.Although plate of the invention and shaft assembly can be undergone certain other after connection in certain embodiments Processing, but do not need in other embodiments in this way.It does not need to withstand as needed for past method, using thick axis by axis The power of the high contact pressure linked with plate, in the processing of embodiment according to the present invention, from the manufacture of plate and shaft assembly The processing step being time-consuming and expensive except another.
Another advantage of linking method as described herein is, links made of some embodiments according to the present invention Portion can permit for being dismantled the component of such as axis and plate to repair or replace one in two components according to expectation.Example Such as, if plate is damaged due to arc discharge, then plate can be removed and be replaced from component.This will allow for for example with axis again Use associated cost savings.Moreover, by the inventory of axis at hand and plate high temperature, HIGH PRESSURE TREATMENT can not needed In the case where assembling replacement heater, replacing component and previously used component can be linked with embodiment according to the present invention.Class As, if structuring and leakproofness linking part loses its leakproofness, then linking part can be repaired.
Repair procedure for unlocking the component of embodiment according to the present invention connection can carry out as follows.Component can To use fixture to be placed in treatment furnace, the fixture is suitable for providing tension across linking part.Fixture can be by about 2psi extremely The tensile stress of 30psi is applied on linking part contact area.In certain embodiments, fixture can apply bigger across linking part Stress.Fixation kit can be then placed in treatment furnace.Furnace can be evacuated, but this can be not required to during these steps It wants.Temperature can slowly be increased to 200 DEG C with such as 15 DEG C of rates per minute, and then hereafter per minute with 20 DEG C Rate is increased to such as 400 DEG C of normal temperature, and is then increased to solution temperature.When reaching solution temperature, part understands that This is separate.Solving temperature can be specific for material used in brazing layer.In certain embodiments, temperature is solved It may be in the range of 600 DEG C to 800 DEG C.In certain embodiments, solution temperature may be at 800 DEG C to 1000 DEG C of model In enclosing.Fixture may be adapted to the finite motion amount being allowed between two parts, to damage part not in separation.Solve body temperature Degree is specific for material.For aluminium, solution temperature can be in the range of 450 DEG C to 660 DEG C.
Before the previously used part of such as ceramic shaft is easily reused, can by by linking part region processing at making Prepare except irregular surface for reusing the part.In certain embodiments, it may be desirable to be all remaining solderings of removal Material, to control the total amount of the brazing material in linking part when part is attached to new mesh piece.
Compared with the linking method for generating diffusion layer in ceramics, connection processing according to certain embodiments of the present invention is not Generate this diffusion layer.Thus, after soldering processes, ceramics and brazing material keep identical material property, but in pricker They are not in this way before welding step.Thus, if expectation is easily reused in the consequent of disintegrations, then part will have identical material with Identical material property, this allows part to be easily reused under known ingredient and performance.
In certain embodiments of the present invention, such as referring to the enlarged drawing in Figure 34, it is seen that board shaft device 200 has board group part 201 and axis 202.Board group part 201 has layer 203,204,205, these layers are to burn before being assembled into board group part 201 completely Ceramic layer.Top plate layer 203 covers middle layer in the case where being placed with electrode layer 206 between top plate layer 203 and middle layer 204 204.Middle layer 204 covers bottom 205 in the case where being placed with heater layer 207 between middle layer 204 and bottom 205.
The layer 203,204,205 of board group part 201 heats up the ceramics that can be such as aluminium nitride for device, and with regard to electrostatic Can be other materials for chuck, including aluminium oxide, the aluminium oxide of doping, AlN, the AlN of doping, beryllium oxide, doping oxygen Change beryllium etc..The layer 203,204,205 for constituting the board group part of substrate support can be before they are introduced into board group part 201 The ceramics burnt completely.For example, layer 203,204,205 can in the high contact pressure profession furnace of high temperature or by band casting or Firing is plate completely for spark plasma sintering or other methods, and then as desired by these plate layers in board group part Lamination in usage and its position and be processed to final size.Plate layer 203,204,205 can be then by binder couse 208 It is linked together using soldering processing, the permission of binder couse 208 is not being needed equipped with the press for high contact pressure The final component of board group part 201 is formed in the case where professional high temperature furnace.
In the embodiment of a part of axis and final component, such as plate and shaft device, board group part 201 and axis 202 connection processing step can also be in the case where not needing the professional high temperature furnace equipped with the press for high contact pressure It is carried out using soldering processing.In certain embodiments, the connection of the connection of plate layer and board group part and axis can place at the same time It is carried out in reason step.Axis 202 can be attached to board group part 201 by binder couse 209.In certain embodiments, binder couse 209 can To be soldering element identical with binder couse 208.
It is improved to be related to for manufacturing plate or the method for board group part: it is not under high temperature and high contact pressure, In the case where time-consuming and expensive additional process steps, the layer of board group part is attached in till soleplate component, it is above to have said It is bright and illustrate more thoroughly below.Plate layer can be by embodiment according to the present invention for linking the soldering side of ceramics Method connection.The example of method for welding for the first ceramic bodies and the second ceramic bodies to link together may include following Step: the first object and the second object are put together, arrange brazing layer between the first ceramic bodies and the second ceramic bodies, The brazing layer is selected from the group that aluminium and aluminium alloy are constituted；Brazing layer is heated to at least 800 DEG C of temperature；And by pricker Layer is cool below the temperature of its fusing point, to make brazing layer be hardened and to generate gas-tight seal, thus by first component It is attached to second component.It can implement the various geometries of soldering linking part according to method described herein.
In certain embodiments of the present invention, the board group part with layer can make have support between the layer of plate, with Just make to be heated when binder couse and when smaller pressure is applied axially to plate, generate it is smaller be compressed axially so that even It is moderately thinning to tie layer, until the support on a plate contacts adjacent plate.In certain aspects, this is not only allowed for pair The thickness control of linking part, and for the size and allowance control to board group part.For example, the parallel of the feature of various plates can To be set by the machining tolerance on plate layer, and this aspect can be maintained during connection is handled by using support.? In some embodiments, the size Control after connection can be realized by using the circumference outer ring on a plate layer, one plate Inner ring outside circumference on layer on the adjacent layer of ring cover is to provide axial consistency.In certain embodiments, outer ring or inner ring In one adjacent plate can also be contacted along the axial direction vertical with plate, also to realize the position on the axial direction Control.Thus, axial position control can also determine the final thickness of the binder couse between two adjacent plates.
In certain embodiments of the present invention, the electrode between layer can have material identical with binder couse, and can To play the dual function of binder couse and cells.For example, previously the region as occupied by electrode can be in electrostatic chuck It is instead concatenated occupied by layer, the binder couse has dual function, that is, execute as electrode for for example providing electrostatic chuck Holding force, and executing is binder couse to link two plates, is placed with binder couse between two plates.In such an embodiment, it surrounds The periphery of plates of two connections can have labyrinth-like object, so as to by sight line and access minimum, the access be usually from The electrode of the perimeter of plate extremely charging.
Figure 35 shows the partial sectional view of board group part 240 according to certain embodiments of the present invention.Board group part 240 can fit In being attached to axis to complete plate and shaft assembly.Top plate layer 241 can be disk, and the disk was suitable in the semiconductor processing steps phase Between support substrate.Heater 244 is suitable for being placed in 241 lower section of top plate layer.Heater can be with attaching or be attached in plate layer one Or both.Top plate layer 241 covers low plate layer 242.Top plate layer 241 is attached to bottom plate 242 by binder couse 243.Binder couse can be Annular disk.In certain embodiments, top plate layer and backplane level are ceramics.In certain embodiments, top plate layer and backplane level are nitrogen Change aluminium.In certain embodiments, binder couse is aluminium.Illustrate the example of connection processing and material below.
Figure 36 shows the partial sectional view of board group part 260 according to certain embodiments of the present invention.Board group part 260 is multilayer Board group part places having heaters and cells between different layers.Layer with soldering element connection, and plate along with plate The final position in the vertical direction of the plane of principal plane is indicated by the support 268 on plate.
Top plate layer 261 covers lower plate layer 262.Lower plate layer 262 covers backplane level 263.Although three plates are shown in FIG. 36 Layer, but the plate layer of different number can be used according to the needs of specific application.Top plate layer 261 uses multi-functional binder couse 266 are attached to lower plate layer 262.Multi-functional binder couse 266 is adapted to provide for top plate layer 261 to the connection of lower plate layer 262 and is suitable for As electrode.Figure 41 shows the embodiment of this electrode 266.This electrode can be the binder couse of essentially disk, wherein even Knot material also acts as the function of electrode.Such as referring to Figure 36, support 268 be adapted to provide for top plate layer 261 relative to lower plate layer 262 along The position control of the vertical direction vertical with the principal plane of plate layer.The edge of top plate layer 261 is suitable at the periphery of two plates Sight line is removed along boundary 267 between two plates.The thickness of binder couse 266 may be sized such that in heating and link plate Binder couse 266 is set to contact top plate layer 261 and lower plate layer 262 before the step of component.
Lower plate layer 262 covers backplane level 263.Heater 264 is placed between lower plate layer 262 and backplane level 263.Binder couse Lower plate layer 262 is attached to backplane level 263 by 265.Binder couse 265 can be the annular ring in the periphery of plate layer.Support 269 is suitable In offer top plate layer 262 relative to backplane level 263 along the position control of the vertical direction vertical with the principal plane of plate layer.In plate It during the connecting step of component, can be such as preassembled referring to the component of Figure 36, and then this can be used in the plate pre-assembly Processing described in text and link with formed complete board group part, in certain embodiments, the plate pre-assembly can further with axis It is pre-assembled with axis binder couse, so as to link the board shaft device of completion in single heat treatment.The single heat treatment meeting It does not need high temperature furnace or does not need the high temperature furnace with the press for being adapted to provide for high contact stress.In addition, in certain embodiments, Completed plate and shaft assembly can not need any connection post-processing, and still can meet and actually use in semiconductor fabrication In this device tolerance.
Figure 37 shows the partial sectional view of two plate layers 220,221, wherein reservoir 226 is seen in backplane level 221.Top Plate layer 220 can cover backplane level 221.There may be electrode sections 223 between top plate layer 220 and backplane level 221.Support 225, which are adapted to provide for top plate layer 220, controls relative to backplane level 263 along the position of the vertical direction vertical with the principal plane of plate layer System.Reservoir 226 can be placed in backplane level in the radially outer of binder couse 222.Reservoir 226 is located so that can be in reservoir The excessive connecting material of the possibility from binder couse is captured, and reservoir 226 does not move in labyrinth-like object 224.It is just wherein electric For pole and binder couse are the plate of same feature, such as referring to the electrode of Figure 36 266, reservoir can be more even more important than binder couse, and And be possible to excessively it is important, reservoir can be electrically charged, and thus be unsuitable for towards board group part outer periphery leak.
In certain embodiments, plate layer may include channel, and the channel is suitable for gas being routed through substrate assembly. Plate layer can have channel, wherein the material between channel of plate layer is attached to adjacent plate according to the method for the present invention. Thus, each plate layer can be made into so that channel is present in the ceramic member finally burnt completely, and the part can link To adjacent layer.In certain embodiments, channel can be connected to the conduit in axis and/or axis.
For linking together the plate layer made of aluminium nitride to form the method for welding of board group part reality Apply example can be implemented it is as follows.The sheet material of aluminum or aluminum alloy metal-to-metal adhesive or filler can be set between plate layer, and at certain The sheet material of aluminum or aluminum alloy metal-to-metal adhesive or filler is also set between axis and backplane level in a little aspects, and plate layer can be It puts together in the case where the sheet material for being disposed with metal-to-metal adhesive between it.Metal-to-metal adhesive or filler then can be in a vacuum Be heated to and at least 800 DEG C of temperature and be cooled to below 600 DEG C of temperature, to make metal-to-metal adhesive or filler be hardened and Generate it is gas-tight seal, it is described gas-tight seal to be attached to board group part at board group part and by axis for plate layer is connected to each other.
In the exemplary embodiment, plate layer can be aluminium nitride, and handled individually using liquid-phase sintering in advance It is formed.In certain embodiments, plate layer can have the diameter and 0.1 inch to 0.75 inch of thickness of about 200mm to 300mm Degree.Axis can be hollow cylinder, have 5 inches to 10 inches of length and 0.1 inch of wall thickness.The bottom of board group part It can have recessed portion, the recessed portion is suitable for the outer surface of the first end of receiving axis.Board group part and axis can be fixed on one It rises and is placed between part at predetermined coupling position appropriate with the brazing material for connecting step, aluminium foil.Fixture can incite somebody to action The contact pressure of about 2psi to 200psi is applied on linking part contact area.In certain embodiments, contact pressure can be located In the range of 2psi to 40psi.Contact pressure used at the step is significantly less than using such as in existing processing Contact pressure seen in the connecting step for the hot pressurization/sintering seen, it is existing processing will use 2000psi extremely Pressure in the range of 3000psi.By the significantly reduced contact pressure of method of the invention, the special of the above method is not needed Industry press.Be able to use simple fixture provide it is for using this method that plate layer is connected to each other at board group part and by board group part Pressure needed for being attached to axis, the pressure may include the quality that is placed on fixture using gravity to provide contact pressure. In certain embodiments, the contact between the interface portion of plate layer and interface portion and the interface portion of soldering element in axis / contact will provide be sufficient to connection contact pressure.Accordingly, it is not necessary to by separating with fixation kit itself Press works to fixation kit.Fixation kit can be then placed in treatment furnace.Furnace can be evacuated to 1x10E-5 support Pressure.In certain aspects, apply vacuum to remove residual oxygen, in certain embodiments, use more than the true of 1x10E-4 support It is empty.In certain embodiments, the vacuum of 1x10E-5 support is used more than.About the step it should be noted that for the connecting step and Speech, does not need the high temperature furnace with the fixture of high contact pressure, and the high temperature furnace is during manufacture ceramic component (axis and plate) It is required.When beginning to warm up circulation, temperature for example slowly can be increased to 200 DEG C with 15 DEG C of rates per minute, and after And such as 600 DEG C of normal temperature and junction temperatures is hereafter increased to 20 DEG C of rates per minute, and fixed resident Time is maintained to allow to restore vacuum after heating at each temperature, so as to by gradient minimisation and/or for other originals Cause.When having reached brazing temperature, temperature can be kept realizing the time of soldering reaction.In the exemplary embodiment, it stays Temperature is stayed to can be 800 DEG C, and residence time can be 2 hours.In another exemplary embodiment, resident temperature can be with It is 1100 DEG C, and residence time can be 15 minutes.In another exemplary embodiment, resident temperature can be 1075 DEG C, and residence time can be 1 hour.In certain embodiments, it is resident maximum temperature and is no more than 1100 DEG C.In certain implementations In example, it is resident maximum temperature and is no more than 1300 DEG C.In certain embodiments, it is resident maximum temperature and is no more than 1400 DEG C.It is obtaining When enough soldering residence times, stove can be cooled to room temperature with 20 DEG C of rates per minute, or when intrinsic stove is cooling When rate is lower, stove can be cooled to room temperature with lower rate more per minute than 20 DEG C.Stove can achieve atmospheric pressure, stove Be opened, and can remove brazed assembly with for check, feature description and/or assessment.
Figure 38 to Figure 40 was shown in adding between plate layer in substrate support according to certain embodiments of the present invention The embodiment of hot device element 270,271,272.
In certain embodiments, plate can be circular.In certain embodiments, plate can be square.Certain In embodiment, plate can have different shapes.
In some embodiments of multilayer panel assembly, for example, the not device of axis, ceramic layer can cover metal base Or other materials.In such embodiments, the connected to each other and layer that processing execution level as described herein can be used arrives The connection of base portion.In certain embodiments, the layer of other materials can be dispersed between other ceramic layers.
In one aspect of the invention, it provides a kind of for manufacturing for the board shaft device used in semiconductor processes Method, and the method includes being attached to mount board for assembly axis, wherein described that assembly axis is attached to device The step of plate, between the interface area of the described device axis and the interface area of described device plate the following steps are included: place soldering Element；Apply pressure across the soldering element between described device axis and described device plate to generate axis and plate pre-assembly； And the axis and plate pre-assembly are heated, described device axis is thus attached to described device by hermetically sealed linking part Plate.
This method may comprise steps of: applied vacuum to before heating the axis and plate pre-assembly the axis and Plate pre-assembly, wherein the vacuum is held in the palm less than 1x10E-4.The above method can with the following steps are included: heat the axis and The axis and plate pre-assembly are applied vacuum to before plate pre-assembly；And institute is kept during heating the axis and plate pre-assembly State vacuum, wherein the vacuum is held in the palm less than 1x10E-5.Assembly axis may include ceramics, aluminium nitride, aluminium nitride and above-mentioned material The combination of material.Being brazed element may include aluminium.This method may also comprise the following steps:: heat the axis and plate pre-assembly it Before apply vacuum to the axis and plate pre-assembly；And the vacuum is kept during heating the axis and plate pre-assembly, In, the vacuum is less than 1x10E-4 and asks or be less than 1x10E-5 to hold in the palm.Soldering element, which can contain, calculates by weight at least 89% Aluminium or calculate by weight at least 99% aluminium.The axis and board group part of pressurization may include heating the axis of the pressurization and board group part To the first temperature between 800 DEG C and 1200 DEG C.The axis of the pressurization and board group part are heated to first temperature Step may include: that the axis of the pressurization and board group part are heated to institute in the duration between 10 minutes and 2 hours State the first temperature.The step of heating the axis and board group part of pressurization may include: to be heated to be situated between by the axis of the pressurization and board group part Temperature between 800 DEG C and 1200 DEG C.The step of axis of the pressurization and board group part are heated to first temperature can be with It include: that the axis of the pressurization and board group part are heated to first temperature in the duration between 10 minutes and 2 hours Degree.The step of applying pressure between described device axis and described device plate may include: in described device axis and described device Apply the pressure between 1psi and 200psi or between 2psi and 40psi between plate.This method may include following Step: the axis and plate pre-assembly are applied vacuum to before heating the axis and plate pre-assembly；And heating the axis With the vacuum is kept during plate pre-assembly, wherein the vacuum be less than 1x10E-4 hold in the palm or be less than 1x10E-5 hold in the palm.This method is also May comprise steps of: by the axis linked and connection parts be heated to above 540 DEG C or between 540 DEG C and 1100 DEG C it Between temperature；And the linking part between described device axis and described device plate is disintegrated.This method can also include Following steps: one in replacement described device axis or described device plate；And the assembly axis replaced or plate are attached to surplus Remaining original axis or plate.This method may also comprise the following steps:: one in replacement described device axis or described device plate；With And the assembly axis replaced or plate are attached to remaining original axis or plate.The step of heating the axis and board group part of pressurization can be with It include: the maximum temperature being heated to the axis of the pressurization and board group part lower than 1200 DEG C.It is described that assembly axis is attached to device The step of plate, can also include the steps that maintaining minimum linking part thickness.
In one aspect of the invention, one kind is provided and is used for the board shaft device used in semiconductor processes, and institute Stating board shaft device may include: plate；Axis, the axis include inner space and outside, and the axis is connected to the bottom surface of the plate；With First binder couse, first binder couse are arranged between the plate and the axis, wherein first binder couse is from the axis The outside inner space of the axis is airtightly sealed by first binder couse.Plate may include aluminium nitride. Axis may include aluminium nitride.First binder couse may include aluminium.Axis may include ceramics.Plate may include the first ceramics, and Axis may include the second ceramics.The thermal coefficient of first ceramics can be higher than the thermal coefficient of second ceramics.First Ceramics may include aluminium nitride, and the second ceramics may include zirconium oxide.Binder couse may include aluminium.Board shaft device can be with Including the second binder couse, wherein second binder couse is from the outside of the axis along than first binder couse The axis and board interface of the big radial distance of radial distance seal the inner space of the axis.Second binder couse may include Aluminium.Board shaft device can also include third binder couse, wherein the third binder couse from the outside of the axis along than The axis and board interface of the small radial distance of the radial distance of first binder couse seal the inner space of the axis.The Three binder couses may include aluminium.
In one aspect of the invention, it provides a kind of for that used in the semiconductor processes and will have the first interface First of area and for used in the semiconductor processes and second method to link together with second contact surface area, And the described method includes: placing soldering element between first interface area and the second contact surface area；At first and Apply pressure across the soldering element between second to generate pre-assembly；And heating pre-assembly, so that first be borrowed Hermetically sealed linking part is helped to be attached to second.
The application step may include: to be brazed first at element together with pushing with second.Described first Part can be plate, and described second can be axis.
In one embodiment in terms of of the invention, provide a kind of for that there will be first ceramic member in the first interface area The method for being attached to the second ceramic member with second contact surface area, and the described method includes: in first interface area and institute It states and places soldering element between second contact surface area；By first ceramic member and second ceramic member and its between soldering member Part is placed into process chamber；From the process chamber deoxygenation；And at least described soldering element is heated to junction temperatures, thus Hermetically sealed linking part is set between first ceramic member and second ceramic member.One in terms of of the invention It in embodiment, provides a kind of for linking the method for ceramic material, and the described method includes: soldering element is placed on first Link pre-assembly between the interface area of ceramic member and the interface area of the second ceramic member to generate；By the component of the connection pre-assembly It is placed into process chamber；From the process chamber deoxygenation；And the connection pre-assembly is heated to the first junction temperatures, thus Link first ceramic member and second ceramic member by hermetically sealed linking part.
This method may include: during the heating stepses, first ceramic member and second ceramic member it Between across the soldering element application pressure.First ceramic member may include aluminium nitride.Second ceramic member may include aluminium nitride. Being brazed element may include aluminium.In one embodiment, soldering element can contain the aluminium calculated by weight more than 99%.From institute The step of stating process chamber deoxygenation may include: that the pressure for being less than 1x10E-4 support is applied to the process chamber.The connection is pre- It may include: that the connection pre-assembly is heated between 800 DEG C and 1200 DEG C that component, which is heated to the step of the first junction temperatures, Between temperature.The above method can also include: before completing the connection pre-assembly, by the interface area of first ceramics Pre-metallization；And before completing the connection pre-assembly, by the interface area pre-metallization of second ceramics.It will be described Connection pre-assembly the step of being heated to the first junction temperatures may include: by the connection pre-assembly be heated between 1000 DEG C with Temperature between 1200 DEG C.The step of connection pre-assembly is heated to the first junction temperatures may include: by the connection Pre-assembly is heated to the temperature between 1000 DEG C and 1300 DEG C.The above method can also include: to complete the connection in advance Before component, by the interface area pre-metallization of first ceramics；It, will be described and before completing the connection pre-assembly The interface area pre-metallization of second ceramics.It may include: the pressure that will be held in the palm less than 1x10E-5 from the step of process chamber deoxygenation It is applied to the process chamber.From the step of process chamber deoxygenation can also include: the connection pre-assembly is placed on it is described It handles in indoor zirconium interior room.The step of connection pre-assembly is heated to the first junction temperatures may include: by the company Knot pre-assembly is heated to the temperature between 800 DEG C and 1200 DEG C.The connection pre-assembly is heated to the first junction temperatures The step of may include: to heat the connection pre-assembly in the duration between 10 minutes and 2 hours, and at one In embodiment, the step of connection pre-assembly is heated to the first junction temperatures may include: between 30 minutes and 1 hour Between duration heat the connection pre-assembly.It may include: with pure dehydration inertia from the step of process chamber deoxygenation Gas is purified and is refilled to the room.It may include: net to the room with purifying hydrogen from the step of process chamber deoxygenation Change and refills.This method can also include: before completing the connection pre-assembly, the described first ceramic interface area is pre- Metallization；And before completing the connection pre-assembly, by the interface area pre-metallization of second ceramics.
In one embodiment in terms of of the invention, provide a kind of for that there will be the ceramic by first of the first interface area First ceramic member made of material is attached to the side of the second ceramic member made of the second ceramic material with second contact surface area Method, and the described method includes: soldering element is placed between first interface area and the second contact surface area；By described One ceramic member and second ceramic member and its between soldering element be placed into process chamber；And it will at least described soldering Element is heated to junction temperatures, to form hermetically sealed connection between first ceramic member and second ceramic member Portion, the material of the hermetically sealed linking part is different from first ceramic material and second ceramic material, and institute Stating hermetically sealed linking part has the thickness for being greater than zero.In one embodiment in terms of of the invention, one kind is provided and is used for Link the method for ceramic material, and the described method includes: will soldering element be placed on the first ceramic member and the second ceramic member it Between linking part interface area in generate link pre-assembly；The component of the connection pre-assembly is placed into process chamber；And The connection pre-assembly is heated to the first junction temperatures, it thus will while maintaining the minimum linking part thickness of first thickness First ceramic member is attached to second ceramic member.
First ceramic member may include aluminium nitride.Second ceramic member may include aluminium nitride.Being brazed element may include aluminium, And in one embodiment, soldering element contains the aluminium calculated by weight more than 89%.This method can also include from described The step of process chamber deoxygenation.It is described from the step of process chamber deoxygenation may include: will be less than 5x10E-5 hold in the palm pressure apply To the process chamber.The step of connection pre-assembly is heated to the first junction temperatures may include: by pre- group of the connection Part is heated to the temperature between 800 DEG C and 1200 DEG C.The step of connection pre-assembly is heated to the first junction temperatures It may include: to heat the connection pre-assembly in the duration between 10 minutes and 4 hours.In one embodiment, The step of connection pre-assembly is heated to the first junction temperatures may include: in holding between 25 minutes and 1 hour The continuous time heats the connection pre-assembly.The step of connection pre-assembly is heated to the first junction temperatures may include: by The connection pre-assembly is heated to the temperature between 800 DEG C and 1300 DEG C.It can wrap from the step of process chamber deoxygenation It includes: the pressure for being less than 1x10E-4 support is applied to the process chamber.It may include: with pure from the step of process chamber deoxygenation Dehydration inert gas is purified and is refilled to the room.It may include: with purifying hydrogen pair from the step of process chamber deoxygenation The room purifies and refills.Soldering element can contain the aluminium calculated by weight more than 99%.This method can also include: from The process chamber deoxygenation.From the step of process chamber deoxygenation may include: will be less than the pressure that 5x10E-5 is held in the palm be applied to it is described Process chamber.The step of connection pre-assembly is heated to the first junction temperatures may include: to heat the connection pre-assembly To the temperature between 800 DEG C and 1200 DEG C.The step of connection pre-assembly is heated to the first junction temperatures can wrap It includes: the temperature connection pre-assembly being heated between 800 DEG C and 1300 DEG C.It can from the step of process chamber deoxygenation To include: that the pressure for being less than 1x10E-4 support is applied to the process chamber.May include: from the step of process chamber deoxygenation The room is purified and refilled with pure dehydration inert gas.It may include: to use purified hydrogen from the step of process chamber deoxygenation Gas is purified and is refilled to the room.This method can also include from the process chamber deoxygenation.Soldering element before the brazing may be used To have the second thickness greater than the first thickness.This method can also include from the process chamber deoxygenation.Soldering element exists It can have the second thickness greater than the first thickness before soldering.
In one embodiment in terms of of the invention, a kind of method for assembly axis to be attached to mount board is provided, Described device axis and described device plate are used in semiconductor processes and have corresponding axis interface area and board interface area, and institute The method of stating includes: that soldering element is placed between axis interface area and the board interface area；And heating described device axis and Mount board and its between soldering element, so that hermetically sealed connection be arranged between described device axis and described device plate Portion.In one embodiment in terms of of the invention, a kind of method for assembly axis to be attached to mount board, and institute are provided The method of stating includes: that soldering element is placed between the interface area of described device axis and the interface area of described device plate；And heating Thus described device axis is attached to described device plate by hermetically sealed linking part by the axis and plate pre-assembly.
This method can also include: that the axis and plate pre-assembly are applied vacuum to during the heating stepses, wherein The pressure is held in the palm lower than 1x10E-4.This method can also include: applied vacuum to during the heating stepses axis and Plate pre-assembly, wherein the pressure is held in the palm lower than 1x10E-5.Mount board may include ceramics.In one embodiment, mount board It may include aluminium nitride.Assembly axis may include aluminium nitride.In one embodiment, assembly axis may include ceramics.Soldering member Part may include aluminium.The step of assembly axis is attached to mount board can also include the steps that maintaining minimum linking part thickness.It will Assembly axis is attached to the step of mount board can also be including maintaining minimum linking part thickness.It can from the step of process chamber deoxygenation To include: that the room is purified and refilled with pure dehydration inert gas.It may include: use from the step of process chamber deoxygenation Purifying hydrogen is purified and is refilled to the room.Soldering element can contain the aluminium for calculating by weight at least 89%.By assembly axis The step of being attached to mount board can also include maintaining minimum linking part thickness.Soldering element, which can contain, to be calculated by weight at least 99% aluminium.Heat pressurization axis and board group part the step of may include: by the axis of the pressurization and board group part be heated between The first temperature between 800 DEG C and 1200 DEG C.This method can also include: that the axis that will be linked and connection parts are heated to be situated between Temperature between 540 DEG C and 1100 DEG C；And by the linking part solution between described device axis and described device plate Body.This method can also include: one replaced in described device axis or described device plate；And the assembly axis that will be replaced Or plate is attached to remaining original axis or plate.The step of axis of the pressurization and board group part are heated to first temperature can be with It include: that the axis of the pressurization and board group part are heated to first temperature in the duration between 10 minutes and 2 hours Degree.The step of heating the axis and board group part of pressurization may include: the axis of the pressurization and board group part are heated between 800 DEG C and Temperature between 1300 DEG C.The step of heating the axis and board group part of pressurization may include: to add the axis of the pressurization and board group part Heat arrives the first temperature between 800 DEG C and 1200 DEG C.The step of heating the axis and board group part of pressurization may include: will be described The axis and board group part of pressurization are heated to the maximum temperature lower than 1200 DEG C.The step of heating the axis and board group part of pressurization can wrap It includes: the axis of the pressurization and board group part is heated to the maximum temperature lower than 1300 DEG C.This method can also include: that will be linked Axis and connection parts be heated to above 540 DEG C of temperature；And by the institute between described device axis and described device plate State linking part disintegration.
In one embodiment in terms of of the invention, a kind of method for assembly axis to be attached to mount board is provided, Described device axis and described device plate are used in semiconductor processes and have corresponding axis interface area and board interface area, and institute The method of stating includes: that soldering element is placed between axis interface area and board interface area；And heating device axis and mount board and its it Between soldering element, so that hermetically sealed linking part be arranged between assembly axis and mount board.One in terms of of the invention In a embodiment, a kind of board shaft device used in semiconductor processes is provided, and the board shaft device may include: plate； Axis, the axis include inner space and outside, and the axis is connected to the bottom surface of the plate；Connect with the first binder couse, described first Layer arrangement is tied between the plate and the axis, wherein first binder couse passes through described the from the outside of the axis One binder couse airtightly seals the inner space of the axis.
Plate may include aluminium nitride.Axis may include aluminium nitride.First binder couse includes aluminium.In one embodiment, One binder couse may include aluminium.Axis may include ceramics.Board shaft device can also include the second binder couse, wherein described second Binder couse seals the inner space of the axis around the outside of first binder couse from the outside of the axis.Second Binder couse may include aluminium.Board shaft device can also include third binder couse, wherein the third binder couse is along described first The inside of binder couse seals the inner space of the axis from the outside of the axis.Plate may include the first ceramics, and And axis may include the second ceramics.The thermal coefficient of first ceramics can be higher than the thermal coefficient of the second ceramics.First ceramics can To include aluminium nitride, and the second ceramics may include zirconium oxide.Binder couse may include aluminium.First ceramics may include nitridation Aluminium, and the second ceramics may include aluminium oxide.First ceramics may include aluminium nitride, and the second ceramics may include carbonization Silicon.Board shaft device can also include third binder couse, wherein the third binder couse along first binder couse inside from The external inner space for sealing the axis of the axis.Third binder couse may include aluminium.First binder couse can be with Including Nitinol.The liquidus temperature of first binder couse and the second binder couse can be higher than the liquidus curve temperature of third binder couse Degree.
In one embodiment in terms of of the invention, provide a kind of for manufacturing for used in the semiconductor processes The method of multilayer panel assembly, and the described method includes: by upper plate layer, lower plate layer and be arranged between upper plate layer and lower plate layer Brazing layer forms lamination；Apply pressure between the upper plate layer and the lower plate layer, to compress soldering element；And add Heat laminating forms hermetically sealed linking part to make to be brazed element between upper plate layer and lower plate layer.In terms of of the invention One embodiment in, a kind of method for manufacturing for the multilayer panel assembly used in semiconductor processes is provided, and The described method includes: by multiple plate component layouts into lamination, wherein the multiple plate component include upper plate layer, lower plate layer and Brazing layer, the brazing layer are arranged between the upper plate layer and the lower plate layer；The upper plate layer is attached to the lower plate Layer, wherein the described the step of upper plate layer is attached to the lower plate layer includes: horizontal between the upper plate layer and lower plate layer It crosses the soldering element and applies pressure；And the lamination of heating plate component, thus by the upper plate layer by hermetically sealed company Knot is attached to the lower plate layer.
Multilayer panel assembly can have lateral dimension, and lateral dimension in each of upper plate layer and lower plate layer is ok It is approximately equal to the lateral dimension of the multilayer panel assembly.Each of described lateral dimension can be diameter.This method can be with It include: the lamination that the plate component is applied vacuum to during the lamination for heating the plate component, wherein the pressure It is held in the palm lower than 1x10E-4.This method can also include: to apply vacuum to the plate portion during the lamination for heating the plate component The lamination of part, wherein the pressure is held in the palm lower than 1x10E-5.Upper plate layer may include aluminium nitride.Lower plate layer may include ceramics. Lower plate layer may include aluminium nitride.Being brazed element may include aluminium.In one embodiment, soldering element can be containing by weight Calculate at least 89% aluminium；In one embodiment, soldering element can contain the aluminium for calculating by weight at least 99%.It is described to add The step of lamination of hot plate component may include: that the lamination of the pressurization of the plate component is heated between 800 DEG C and 1200 DEG C Between the first temperature.The step of lamination of the heating plate component may include: that the lamination of plate component is heated between 800 DEG C and 1200 DEG C between temperature.The step of lamination by plate component is heated to first temperature may include: by plate The duration of component being stacked between 10 minutes and 2 hours is heated to the first temperature.It is described in the upper plate layer and The step of applying pressure between the lower plate layer may include: to apply between the upper plate layer and the lower plate layer between 1psi Pressure between 500psi.This method can also include: to apply vacuum to institute before the lamination for heating the plate component State the lamination of plate component, wherein pressure is held in the palm less than 1x10E-5, described to apply pressure between the upper plate layer and the lower plate layer The step of power may include: the pressure applied between 2psi and 40psi between the upper plate layer and the lower plate layer.Institute The step of stating the lamination for heating the pressurization of the plate component may include: the lamination of plate component is heated between 800 DEG C and Temperature between 1300 DEG C.The step of lamination of the heating plate component may include: by the lamination of the pressurization of the plate component The first temperature being heated between 800 DEG C and 1200 DEG C.The step of lamination of the heating plate component may include: by institute State the pressurization of plate component lamination be heated between 800 DEG C and 1300 DEG C to the first temperature.This method can also include: From the process chamber deoxygenation, wherein the oxygen scavenging step includes: that the room is purified and refilled with pure dehydration inert gas. This method can also include: from the process chamber deoxygenation, wherein the oxygen scavenging step includes: net to the room with purifying hydrogen Change and refills.Described the step of applying pressure between the top plate layer and the lower plate layer may include: in the upper plate Apply the pressure between 1psi and 500psi between layer and the lower plate layer.Between the upper plate layer and the lower plate layer Applying pressure step may include: the pressure applied between 2psi and 40psi between the upper plate layer and the lower plate layer Power.This method can also include: that the multilayer panel assembly is heated to above to the temperature of the liquidus temperature of jointing material；With And the linking part between the top plate layer and the lower plate layer is disintegrated.
In one embodiment in terms of of the invention, provide a kind of for manufacturing for used in the semiconductor processes The method of multilayer panel assembly, and the described method includes: by multiple plate component layouts into lamination, wherein the multiple plate portion Part includes upper plate layer, lower plate layer and brazing layer, and the brazing layer is arranged between the upper plate layer and the lower plate layer and will The upper plate layer is attached to the lower plate layer, wherein the described the step of upper plate layer is attached to the lower plate layer include: by The lamination is placed in the process chamber；From the process chamber deoxygenation；When the lamination of plate component is in the process chamber of deoxygenation, The lamination of heating plate component；And while maintaining minimum linking part thickness, the upper plate layer is attached to the lower plate Layer.It is described to be filled for manufacturing for the multi-layer board used in semiconductor processes in one embodiment in terms of of the invention The method set includes: by the upper plate layer of the first material, the lower plate layer of the second material and to be arranged in the upper plate layer and the lower plate Brazing layer between layer forms lamination；And the lamination is heated, to be formed between the upper plate layer and the lower plate layer Linking part, the material of the linking part is different from first material and second material, and the linking part has greatly In zero thickness.
The heating stepses may include: that lamination is placed on process chamber to neutralize from process chamber deoxygenation.Upper plate layer can wrap Include aluminium nitride.Lower plate layer may include aluminium nitride.Lower plate layer may include ceramics.Being brazed element may include aluminium.From described The step of managing room deoxygenation may include: that the pressure for being less than 5x10E-5 support is applied to the process chamber.From the process chamber deoxygenation The step of may include: will be less than 1x10E-4 support pressure be applied to the process chamber.The lamination of the heating plate component The step of may include: the temperature being heated between 800 DEG C and 1200 DEG C.The step of the lamination of the heating plate component It suddenly may include: in the duration heating between 10 minutes and 2 hours.The step of heating the lamination of the plate component can To include: the temperature being heated between 800 DEG C and 1300 DEG C.It may include: with pure from the step of process chamber deoxygenation Dehydration argon gas is purified and is refilled to the room.It may include: with purifying hydrogen to described from the step of process chamber deoxygenation Room purifies and refills.
In one aspect of the invention, one kind is provided and is used for the multi-layer board used in semiconductor processes, and is described Multi-layer board includes: upper plate layer, and the upper plate layer has disk；Lower plate layer；And binder couse, the binder couse are arranged in the upper plate layer Between the lower plate layer, wherein the upper plate layer is attached to the lower plate layer by the binder couse.
Upper plate layer may include ceramics.Binder couse may include aluminium.Multi-layer board can also include heater, the heater It is placed between the upper plate layer and the lower plate layer, wherein the binder couse includes the ring around the outer periphery of the heater. Multi-layer board can also include plane electrode, and the plane electrode is placed between the upper plate layer and the lower plate layer, wherein described Binder couse includes the ring around the outer periphery of the heater.Upper plate layer may include aluminium nitride.Lower plate layer may include nitridation Aluminium.Binder couse may include aluminium.Multi-layer board can also include plane electrode, and the plane electrode be placed in the upper plate layer and described Between lower plate layer, wherein the binder couse includes the ring around the outer periphery of the heater.Binder couse may include plane electricity Pole, the plane electrode are placed between the upper plate layer and the lower plate layer.Multi-layer board can also include heater, the heating Device is placed between the upper plate layer and the lower plate layer, wherein the binder couse includes around the outer periphery of the heater Ring.Lower plate layer may include ceramics.
In one aspect of the invention, one kind is provided and is used for the multi-layer board used in semiconductor processes, and is described Multi-layer board includes top plate layer, one or more intermediate laminaes, backplane level and the multiple binder couses being arranged between plate layer, wherein The binder couse links the plate layer.
Each of plate layer may include ceramics.Binder couse may include aluminium.Multi-layer board can also include high-tension room, described High-tension room is placed between one in the plate layer and another in the plate layer.Each of plate layer may include nitridation Aluminium.Binder couse may include aluminium.Each of binder couse may include aluminium layer, and the aluminium layer surrounds the phase linked by the layer The outer periphery in the interface area of adjacent plate.Multi-layer board can also include heater, the heater be placed in one in the plate layer and Between another in the plate layer.Multi-layer board can also include heater, and the heater is placed in one in the plate layer Between another in the plate layer.Multi-layer board can also include electrode, the electrode be placed in one in the plate layer and Between another in the plate layer.Multi-layer board can also include electrode, and the electrode is placed in one and institute in the plate layer It states between another in plate layer.Multi-layer board can also include high-tension room, the high-tension room be placed in one in the plate layer and Between another in the plate layer.
Such as from it is described above it is obvious to a person skilled in the art that for, can illustrate structure from given herein Various embodiments are made, and are easy to get additional advantage and modification.Therefore, the present invention is in its wide side Face is not limited to shown and illustrated specific detail and illustrative examples.Therefore, it can be detached from the applicant's no Such details is changed in the case where the spirit and scope of overall invention.

Claims (10)

1. it is a kind of for with the first interface area the first ceramic semiconductors processing equipment part made of the first ceramic material Semiconductor processes are manufactured with the second ceramic semiconductors processing equipment part made of the second ceramic material with second contact surface area The method of equipment, which comprises place between first interface area and the second contact surface area containing by weight Calculate the aluminium soldering element of the aluminium more than 89%；By the first ceramic semiconductors processing equipment part and second ceramic semiconductors Processing equipment part and its between the aluminium soldering element be placed into process chamber；From the process chamber deoxygenation；And it will at least The aluminium soldering element is heated at least 800 DEG C of junction temperatures, thus in the first ceramic semiconductors processing equipment part and Hermetically sealed aluminium linking part, the hermetically sealed aluminium linking part are formed between the second ceramic semiconductors processing equipment part With the thickness for being greater than zero；And the method does not have diffusion bonding.
2. according to the method described in claim 1, wherein, the first ceramic semiconductors processing equipment part and second ceramics One of semiconductor processing equipment part or both includes aluminium nitride.
3. according to the method described in claim 1, wherein, the aluminium soldering element contains the aluminium calculated by weight more than 99%.
4. according to the method described in claim 1, including: that will be less than 5x10E-5 to hold in the palm from the step of process chamber deoxygenation wherein Or the process chamber is applied to less than the pressure of 1x10E-4 support.
5. according to the method described in claim 1, wherein, at least described aluminium soldering element to be heated to at least 800 DEG C of connection The step of temperature include: at least described aluminium soldering element is heated between 800 DEG C and 1200 DEG C or between 800 DEG C and Temperature between 1300 DEG C.
6. according to the method described in claim 1, including: with pure dehydration indifferent gas from the step of process chamber deoxygenation wherein Body is purified and is refilled to the process chamber.
7. according to the method described in claim 1, wherein, the aluminium soldering element has airtight close greater than described before the brazing The thickness of the thickness of the aluminium linking part of envelope.
8. a kind of semiconductor processing equipment, the semiconductor processing equipment includes with the first interface area by the first ceramic material Manufactured first ceramic semiconductors processing equipment part, the second ceramics half made of the second ceramic material with second contact surface area Conductor processing equipment part and by containing calculate by weight more than the aluminium soldering element of 89% aluminium is formed it is described first make pottery Hermetically sealed aluminium linking part between porcelain semiconductor processing equipment part and the second ceramic semiconductors processing equipment part, it is described Aluminium soldering element is arranged between first interface area and the second contact surface area, and the hermetically sealed aluminium linking part has Thickness greater than zero, and the first ceramic semiconductors processing equipment part does not have with the second ceramic semiconductors processing equipment part There is the diffusion of aluminium soldering element.
9. semiconductor processing equipment according to claim 8, wherein the first ceramic semiconductors processing equipment part and institute Stating one of second ceramic semiconductors processing equipment part or both includes aluminium nitride.
10. semiconductor processing equipment according to claim 8, wherein the aluminium soldering element contain calculate by weight it is more In 99% aluminium.
CN201910523867.8A 2011-11-30 2012-11-30 For the method for connecting material, board shaft device and so as to form multi-layer board Pending CN110281350A (en)

Applications Claiming Priority (25)

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