CN110277324B - Fan-out module ultrasonic packaging process, equipment and structure - Google Patents

Fan-out module ultrasonic packaging process, equipment and structure Download PDF

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Publication number
CN110277324B
CN110277324B CN201910577684.4A CN201910577684A CN110277324B CN 110277324 B CN110277324 B CN 110277324B CN 201910577684 A CN201910577684 A CN 201910577684A CN 110277324 B CN110277324 B CN 110277324B
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ultrasonic
layer
injection molding
fan
molding layer
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CN110277324A (en
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杨冠南
徐广东
匡自亮
崔成强
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Guangdong University of Technology
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Guangdong University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding

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  • Ultra Sonic Daignosis Equipment (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

The invention discloses a fan-out module ultrasonic packaging process, equipment and a structure, wherein the fan-out module ultrasonic packaging process comprises the following steps: a temporary bonding layer is flatly laid on the top surface of a base station along the stacking direction of the packaging body, a plurality of modules are placed on the top surface of the temporary bonding layer in a clearance mode, injection molding is carried out on the top of the modules to form an injection molding layer surrounding the modules, and the bottom surface of the injection molding layer is bonded with the temporary bonding layer; subjecting the uncured injection molded layer to ultrasonic relaxation. In the fan-out module ultrasonic packaging process, after the temporary bonding layer is tiled, the chip is placed and the injection molding layer is formed by injection molding in sequence, before the injection molding layer is not cured, ultrasonic relaxation is adopted for the injection molding layer, so that the injection molding layer is subjected to stress release through ultrasonic relaxation, the warping effect is reduced, and the packaging quality and reliability are improved.

Description

Fan-out module ultrasonic packaging process, equipment and structure
Technical Field
The invention relates to the technical field of packaging, in particular to a fan-out module ultrasonic packaging process, fan-out module ultrasonic packaging equipment and a fan-out module ultrasonic packaging structure.
Background
With the trend of miniaturization and integration of electronic products, the densification of microelectronic packaging technology has gradually become the mainstream of new generation of electronic products. In order to comply with the development of new generation electronic products, especially the development of mobile phones, notebooks and other products, the modules are developed in the direction of higher density, faster speed, smaller size, lower cost and the like. The Fan-out Wafer Level Package (FOPLP) technology has a wider development prospect as an upgrading technology of the Fan-out Wafer Level Package (Fan-out Wafer Level Package). Compared with the traditional lead bonding module, the fan-out type packaging greatly increases the number of pins of the module, reduces the packaging size, simplifies the packaging steps, shortens the distance between the module and the substrate, and improves the module function. The module has the advantages of supporting a process procedure module below 10nm, short interconnection path, high integration degree, ultrathin thickness, high reliability, high heat dissipation capability and the like.
The basic process of the fan-out package is as follows: and covering the substrate with a temporary bonding adhesive, mounting the module, performing injection molding and curing, removing the temporary bonding adhesive and the substrate, and covering the dielectric layer (ABF) and the redistribution layer (RDL). Such a process also presents two fundamental problems for fan-out packages, namely module drift and warpage behavior. During the packaging process, warpage and internal stress are caused by the difference of thermal expansion coefficients of materials such as plastic, silicon and metal. The difference between the thermal expansion coefficients of the module and the injection molding material enables the warpage generated in the cooling process of the injection molding material to be the most main reason for the warpage generation in the large board level fan-out packaging technology.
In summary, how to effectively solve the problem of high internal stress and warpage generated in the packaging process is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, a first object of the present invention is to provide an ultrasonic packaging process for a fan-out module, which can effectively solve the problems of high internal stress and warpage generated during the packaging process.
In order to achieve the first object, the invention provides the following technical scheme:
a fan-out module ultrasonic packaging process comprises the following steps:
a temporary bonding layer is flatly laid on the top surface of a base station along the stacking direction of the packaging body, a plurality of modules are placed on the top surface of the temporary bonding layer in a clearance mode, injection molding is carried out on the top of the modules to form an injection molding layer surrounding the modules, and the bottom surface of the injection molding layer is bonded with the temporary bonding layer;
and performing ultrasonic relaxation on the uncured injection molding layer by an ultrasonic probe.
In the fan-out module ultrasonic packaging process, after the temporary bonding layer is tiled, the chip is placed and the injection molding layer is formed by injection molding in sequence, before the injection molding layer is not cured, ultrasonic relaxation is adopted for the injection molding layer, so that the injection molding layer is subjected to stress release through ultrasonic relaxation, the warping effect is reduced, and the packaging quality and reliability are improved. In conclusion, the fan-out module ultrasonic packaging process can effectively solve the problems of high internal stress and warping generated in the packaging process.
Preferably, the ultrasonic relaxation of the uncured injection molded layer is:
the ultrasonic probes distributed in an array mode abut against the top surface of the injection molding layer so as to carry out ultrasonic relaxation on the injection molding layer.
Preferably, the surface of the ultrasonic probe, which is abutted to the injection molding layer, is coated with a graphite layer.
Preferably, the ultrasonic probe abuts against the corresponding part of the gap between two adjacent modules on the injection molding layer.
Preferably, the step of ultrasonically relaxing the uncured injection molded layer further comprises: and placing the base platform on a rigid substrate, and attaching the bottom surface of the base platform to the upper surface of the rigid substrate.
Preferably, the periphery of the upper surface of the rigid substrate is bent downwards.
In order to achieve the second object, the invention further provides a fan-out module ultrasonic packaging device, which includes a rigid substrate with an upper surface bent downwards and a plurality of ultrasonic probes distributed in a transverse array and arranged on the upper side of the rigid substrate, wherein the lower side surface of each ultrasonic probe is coated with a graphite layer. The fan-out module ultrasonic packaging equipment adopts the fan-out module ultrasonic packaging process, and has the technical effect, so the fan-out module ultrasonic packaging equipment also has the corresponding technical effect.
In order to achieve the third object, the invention further provides a fan-out module ultrasonic packaging structure, which comprises a base station; the temporary bonding layer covers the bearing surface of the base platform; a plurality of modules, wherein gaps are arranged on the top surface of the temporary bonding layer; the injection molding layer is injection molded on the module to surround the module, and the bottom surface of the injection molding layer is bonded on the upper surface of the temporary bonding layer; and the ultrasonic wave generating device is used for performing ultrasonic relaxation on the injection molding layer. The fan-out module ultrasonic packaging structure adopts the fan-out module ultrasonic packaging process, and has the technical effect, so the fan-out module ultrasonic packaging structure also has the corresponding technical effect.
Preferably, the ultrasonic wave generating device includes that be array distribution and with the ultrasonic transducer who moulds plastics the layer top surface and offset, ultrasonic transducer surface coating has antiseized layer.
Preferably, the device further comprises a rigid substrate with an upper surface used for abutting against the bottom surface of the base table, and the periphery of the upper surface of the rigid substrate is bent downwards; the ultrasonic probe is abutted against the corresponding part of the gap between the two adjacent modules on the injection molding layer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow diagram of a fan-out module ultrasonic packaging process provided by an embodiment of the invention;
fig. 2 is a schematic structural diagram of an ultrasonic package structure of a fan-out module according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of an ultrasonic package structure of a fan-out module according to an embodiment of the present invention;
fig. 4 is a schematic cross-sectional structure diagram of an ultrasonic package structure of a fan-out module under a curved rigid substrate according to an embodiment of the present invention.
The drawings are numbered as follows:
the ultrasonic bonding device comprises an ultrasonic probe 1, an anti-sticking layer 2, a module 3, an injection molding layer 4, a temporary bonding layer 5, a base 6 and a rigid substrate 7.
Detailed Description
The embodiment of the invention discloses an ultrasonic packaging process for a fan-out module, which aims to effectively solve the problems of high internal stress and warping generated in the packaging process.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-4, fig. 1 is a flow chart illustrating an ultrasonic packaging process of a fan-out module according to an embodiment of the invention; fig. 2 is a schematic structural diagram of an ultrasonic package structure of a fan-out module according to an embodiment of the present invention; FIG. 3 is a schematic cross-sectional view of an ultrasonic package structure of a fan-out module according to an embodiment of the present invention; fig. 4 is a schematic cross-sectional structure diagram of an ultrasonic package structure of a fan-out module under a curved rigid substrate according to an embodiment of the present invention.
In an embodiment, the present embodiment provides a fan-out module ultrasonic packaging process for packaging a module 3, where the module 3 mainly refers to a chip, and the fan-out module ultrasonic packaging process may specifically be a wafer-level fan-out packaging process or a large board-level fan-out packaging process. Specifically, the fan-out module ultrasonic packaging process mainly comprises the following steps:
step 100: along the stacking direction of the packaging bodies, a temporary bonding layer 5 is laid on the top surface of the base station 6,
the package stacking direction refers to a stacking direction of the module 3, the temporary bonding layer 5, and the base 6, and generally, the package stacking direction is an up-down direction. For convenience of description, the submount 6 is used as a base, that is, the direction of the submount 6 toward the temporary bonding layer 5 is a top direction, and the reverse direction is a bottom direction. The temporary bonding layer 5 is tiled on the top surface of the base 6, the specific tiled area is consistent with the size of the injection molding layer 4 to be formed finally, and the specific tiled mode can refer to the prior art.
Step 200: and a plurality of modules 3 are arranged on the top surface of the temporary bonding layer 5 in a clearance mode.
After the temporary bonding layer 5 is tiled, the modules 3 are placed, and the modules 3 are juxtaposed in the tiling direction of the temporary bonding layer 5, so that the relative positional relationship between the modules 3 is fixed by the temporary bonding layer 5. The specific relative position relationship between the modules 3 is set as required, and generally, the modules 3 are arranged in an array manner with a certain gap therebetween.
Step 300: and (3) injection molding is carried out from the top of the module 3 to form an injection molding layer 4 surrounding the module 3, and the bottom surface of the injection molding layer 4 is bonded with the temporary bonding layer 5.
The injection molding layer 4 is injected from the top of the module 3 to form a molding layer 4 surrounding the module 3, and the bottom surface of the molding layer 4 is bonded to the temporary bonding layer 5 to effectively prevent the module 5 from shifting, and wherein the top surface of the molding layer 4 is generally formed as a plane and should be higher than the top surface of the module 3 to fully cover the module 3. After the injection molding layer 4 is formed by injection molding, each module 3 is tightly embedded in the injection molding layer 4, so that when the temporary bonding layer 5 is removed at the later stage, the bottom surfaces of the modules 3 are exposed to facilitate connection, and the bottom surface of the injection molding layer 4 and the bottom surface of the module 3 are basically located on the same plane.
Step 400: the uncured injection-molded layer 4 is subjected to ultrasonic relaxation by an ultrasonic probe.
The ultrasonic relaxation means that the physical state of the material tends to be uniform on the microstructure by providing energy through ultrasound, and the stress generated by solidification is reduced. Specifically, the ultrasonic waves are transmitted to the injection layer 4 through a probe mainly by providing an ultrasonic device. It is emphasized that the operation of step 400 should be ultrasonically relaxed prior to curing of the injection molded layer 4 to ensure that stress relief can be performed within the injection molded layer 4. It should be noted that the ultrasonic relaxation may be performed during the curing of the injection molded layer 4 or may be performed near to, but not yet completely cured, and the treatment temperature depends on the material properties of the material of the injection molded layer 4 itself. Note that, uncured should include incomplete curing.
It should be noted that, after the step 400 is executed until the injection molding layer 4 is cured, the temporary bonding layer 5 and the base table 6 are further required to be removed, and then the dielectric layer (ABF) and the redistribution layer (RDL) are covered to complete the whole fan-out module ultrasonic package. Specifically, the rewiring can be performed before the injection molding of step 300, or can be performed after the injection molding of step 300.
In the fan-out module ultrasonic packaging process, after the temporary bonding layer 5 is tiled, the chip is placed and the injection molding layer 4 is formed by injection molding in sequence, before the injection molding layer 4 is not cured, ultrasonic relaxation is adopted for the injection molding layer 4, so that the injection molding layer 4 is subjected to stress release through the ultrasonic relaxation, the warping effect is reduced, and the packaging quality and reliability are improved. In conclusion, the fan-out module ultrasonic packaging process can effectively solve the problems of high internal stress and warping generated in the packaging process.
For better ultrasonic relaxation to allow better transmission of the ultrasound to the injection molded layer 4. Here preferably wherein step 400: performing ultrasonic relaxation on the uncured injection molding layer 4, specifically: the ultrasonic relaxation is carried out on the injection molding layer 4 by the abutting of the ultrasonic probes 1 distributed in an array manner on the top surface of the injection molding layer 4. So that the top surface of the injection molding layer 4 is subjected to relatively uniform ultrasonic reception to perform ultrasonic relaxation smoothly. It should be noted that, for better ultrasonic relaxation, a certain abutting force can be provided between the top surface of the injection-molded layer 4 and the ultrasonic probe 1. The ultrasonic waves should be arranged in parallel along the extending direction of the injection molding layer 4, and are generally distributed in a matrix array and generally uniformly distributed. Specifically, the vibration intensity, arrangement mode and density of the ultrasonic probe 1 can be freely adjusted and designed according to specific packaging requirements.
Specifically, in order to avoid the influence of the ultrasonic wave emitted by the ultrasonic probe 1 on the internal chip, it is preferable that the ultrasonic probe 1 and the corresponding part of the injection layer 4 corresponding to the gap between the two adjacent modules 3 are abutted. That is, the portion of the injection layer 4 that contacts the ultrasonic probe 1 is not a portion corresponding to a chip but a position shifted from a chip, that is, a gap position between two adjacent chips. And cutting off each chip at the later stage, namely cutting off the part of the injection molding layer 4, which abuts against the ultrasonic probe 1.
Further, it is considered that the ultrasonic probe 1 needs to be in contact with the mold layer 4, and in a state where the mold layer 4 is not cured, the ultrasonic probe is in contact with the mold layer 4. In order to avoid the adhesion of the ultrasonic probe 1 to the injection layer 4, it is preferable that the surface of the ultrasonic probe 1, which is opposite to the injection layer 4, is coated with an anti-adhesion layer 2, and specifically, the anti-adhesion layer 2 may be a powder layer, may be a graphite layer, and specifically, may be a graphite powder layer, and plays a role in blocking substances such as oil, water, and the like.
Further, in order to make the injection molded layer 4 absorb the ultrasonic wave better, the above step 400 is preferred here: the uncured injection molded layer 4 was subjected to ultrasonic relaxation, previously comprising: the base 6 is placed on the rigid substrate 7, and the bottom surface of the base 6 is bonded to the upper surface of the rigid substrate 7, so that the temporary bonding layer 5, the module 3, and the injection layer 4, which are the base 6, are supported by the rigid substrate 7. Wherein the upper surface of the rigid substrate 7 may be a horizontal surface, but may also be other surfaces. Furthermore, the periphery of the upper surface of the rigid substrate 7 is preferably bent downwards, so that the upper surface is in a curved surface shape, that is, the upper surface of the rigid substrate 7 has an upward convex curvature, so as to play a role in negative compensation for warpage, and the curvature can be selected according to parameters such as the structure, material properties and processing technology of the package itself, so that the warpage is minimized as much as possible. The base 6, the injection layer 4 and the module 3 are correspondingly bent, and the ultrasonic probes 1 at the periphery are protruded towards the bottom direction compared with the ultrasonic probes 1 at the middle part.
A more specific application, the package process after the injection molding process, such as for a 320 mm side square large board level fan-out package, where a single chip is a 5 mm side square chip, and the single chip includes a fan-out area that is a 8 mm side square area. At this time, after the fan-out type package adopts an epoxy resin compound as an injection molding material for injection molding, before the injection molding material is cured, a base station 6, a temporary bonding layer 5, a chip and an uncured injection molding layer 4 are sequentially arranged on the structure from bottom to top, the upper surface of an upper convex rigid substrate 7 is an upward convex curved surface through ultrasonic probes 1 distributed in an array manner, and array type ultrasonic relaxation is carried out for 5min (5 min) at the local position of the top surface of the injection molding layer 4 under the conditions that the processing temperature is 175 ℃ (centigrade) and the vibration frequency is 25KHz (kilohertz) so as to reduce the package stress and warpage.
In another specific application, the packaging process before the injection molding process of rewiring is a large board-level fan-out packaging process of a square with the side length of 120 mm, wherein a single chip is a square chip with the side length of 5 mm, and the single chip comprises a square area with the fan-out area with the side length of 8 mm. At this time, after the fan-out package adopts an epoxy resin compound as an injection molding material for injection molding, before the injection molding material is cured, a base station 6, a temporary bonding layer 5, a dielectric layer, a rewiring layer, a chip and an uncured injection molding layer 4 are sequentially arranged on the structure from bottom to top, the upper surface of an upper convex rigid substrate 7 is an upward convex curved surface through ultrasonic probes 1 distributed in an array manner, the processing temperature is 150 ℃ (centigrade), and array type ultrasonic relaxation is carried out on the local position of the top surface of the injection molding layer 4 for 10min (minutes) under the conditions that the vibration frequency is 305KHz (kilohertz) so as to reduce the package stress and warpage.
Based on the fan-out module ultrasonic packaging process provided in the above embodiment, the present invention further provides a fan-out module ultrasonic packaging apparatus, specifically, the fan-out module ultrasonic packaging apparatus includes a rigid substrate 7 and a plurality of ultrasonic probes 1, wherein the periphery of the upper surface of the rigid substrate 7 is bent downward for carrying the base 6, and the above steps 100 to 300 are performed on the corresponding rigid substrate 7. The plurality of ultrasonic probes 1 are distributed in a transverse array and are all arranged on the upper side of the rigid substrate 7, and the distances between the lower ends of the ultrasonic probes 1 and the rigid substrate 7 in the vertical direction are all equal, so that after the step 300 is executed, the plurality of ultrasonic probes 1 execute the step 400, that is, the uncured injection layer 4 is subjected to ultrasonic relaxation. As the fan-out module ultrasonic packaging equipment adopts the fan-out module ultrasonic packaging process in the above embodiment, please refer to the above embodiment for the beneficial effects of the fan-out module ultrasonic packaging equipment. Specifically, the ultrasonic probes 1 distributed in an array manner are abutted against the corresponding positions of the gaps between the two adjacent modules 3 on the injection molding layer 4. The surface of the ultrasonic probe 1 that is against the injection layer 4 is preferably coated with a graphite layer.
Based on the fan-out module ultrasonic packaging process provided in the above embodiment, the present invention further provides a fan-out module ultrasonic packaging structure, specifically, the fan-out module ultrasonic packaging structure includes: a base table 6; a temporary bonding layer 5 covering the bearing surface of the base 6; a plurality of modules 3, which are arranged on the top surface of the temporary bonding layer 5 in a clearance mode; the injection molding layer 4 is injection molded on the module 3 so as to surround the module 3, the top surface of the injection molding layer 4 is a plane, and the bottom surface of the injection molding layer is bonded on the upper surface of the temporary bonding layer 5; and the ultrasonic wave generating device is used for performing ultrasonic relaxation on the injection molding layer 4. Namely, the fan-out module ultrasonic packaging structure is an integral structure of the fan-out module ultrasonic packaging process in a state of ultrasonically eliminating stress. As the fan-out module ultrasonic packaging structure adopts the fan-out module ultrasonic packaging process in the above embodiment, please refer to the above embodiment for the beneficial effects of the fan-out module ultrasonic packaging structure.
Further, it is preferred that the ultrasonic wave generating device comprises ultrasonic probes 1 distributed in an array and abutting against the top surface of the injection molding layer 4, wherein the surface of the ultrasonic probes 1 is coated with an anti-sticking layer 2, and the anti-sticking layer 2 is preferably a graphite layer, such as a graphite powder layer.
Further, it is preferable that the substrate further includes a rigid substrate 7 having an upper surface for abutting against a bottom surface of the base 6. The upper surface of the rigid substrate 7 may be a plane, as in the above embodiments, where it is preferred that the upper surface of the rigid substrate 7 is curved downwards all around. In the above embodiment, for better protecting the chip, it is preferable that the ultrasonic probe 1 is abutted against the injection layer 4 at a position corresponding to the gap between two adjacent modules 3.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (7)

1. A fan-out module ultrasonic packaging process is characterized by comprising the following steps:
a temporary bonding layer is flatly laid on the top surface of a base station along the stacking direction of the packaging body, a plurality of modules are placed on the top surface of the temporary bonding layer in a clearance mode, injection molding is carried out on the top of the modules to form an injection molding layer surrounding the modules, and the bottom surface of the injection molding layer is bonded with the temporary bonding layer;
performing ultrasonic relaxation on the uncured injection molding layer by an ultrasonic probe; the ultrasonic relaxation of the uncured injection molded layer is as follows:
the ultrasonic probes distributed in an array mode abut against the top surface of the injection molding layer so as to carry out ultrasonic relaxation on the injection molding layer.
2. The fan-out module ultrasonic packaging process of claim 1, wherein a surface of the ultrasonic probe against the injection molded layer is coated with a graphite layer.
3. The ultrasonic packaging process of the fan-out module according to claim 2, wherein the ultrasonic probe abuts against a part of the injection molding layer corresponding to a gap between two adjacent modules.
4. The fan-out module ultrasonic packaging process of any of claims 1-3, wherein the ultrasonic relaxation of the uncured injection molded layer further comprises: and placing the base platform on a rigid substrate, and attaching the bottom surface of the base platform to the upper surface of the rigid substrate.
5. The ultrasonic fan-out module packaging process of claim 4, wherein the rigid substrate is curved downward around its upper surface.
6. A fan-out module ultrasonic package structure, comprising:
a base station;
the temporary bonding layer covers the bearing surface of the base platform;
a plurality of modules, wherein gaps are arranged on the top surface of the temporary bonding layer;
the injection molding layer is injection molded on the module to surround the module, and the bottom surface of the injection molding layer is bonded on the upper surface of the temporary bonding layer;
the ultrasonic wave generating device is used for performing ultrasonic relaxation on the injection molding layer; the ultrasonic wave generating device comprises ultrasonic probes which are distributed in an array manner and are abutted to the top surface of the injection molding layer, and an anti-sticking layer is coated on the surface of each ultrasonic probe.
7. The fanout module ultrasonic packaging structure of claim 6, further comprising a rigid substrate having an upper surface for abutting against the bottom surface of the submount, the rigid substrate having an upper surface that is curved downward around its perimeter; the ultrasonic probe is abutted against the corresponding part of the gap between the two adjacent modules on the injection molding layer.
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CN107017174A (en) * 2016-01-27 2017-08-04 瑞萨电子株式会社 Semiconductor device and its manufacture method

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