TWM646755U - Protection tape - Google Patents

Abstract

A protection tape includes a substrate and an adhesive layer. The adhesive layer is located above the substrate and includes a main resin and polymer microspheres. The main resin has a softening temperature. The polymer microspheres are dispersed in the main resin. Each polymer microsphere has a hollow structure.

Description

protective tape

The new invention relates to a protective tape and a processing method.

With the development of technology, electronic devices are developing towards high performance, high density, low power consumption and small size. In order to increase the market value of semiconductor wafers, many manufacturers are committed to researching methods for processing semiconductor wafers. For example, many manufacturers will grind the thickness of the wafer to obtain a thinner wafer. In addition, some manufacturers will form a conductive layer on the back of the wafer to reduce electromagnetic interference (EMI) between wafers.

Some embodiments of the present invention provide a protective tape.

At least one embodiment of the present invention provides a protective tape, which includes a base and an adhesive layer. The adhesive layer is located on the base and includes a main resin and a plurality of polymer microspheres. The main resin has a softening temperature of 35 degrees Celsius to 80 degrees Celsius. Polymer microspheres are dispersed in the main resin. Each polymer microsphere has a hollow structure.

Based on the above, protective tape can protect the connection of the substrate when processing the substrate structure to avoid short circuits in the connecting structure. Compared with using customized metal fixtures to protect connection structures, protective tape can be applied to various types of packaging structures, thereby saving the cost of depositing metal layers. In addition, the cost required for maintaining the metal fixture (such as the cost of planing and brushing the metal layer deposited on the metal fixture) can also be saved.

100,100A: Protective tape

110: Base

120,120A: Adhesive layer

122:Main resin

124:Polymer microspheres

124A:Polymer shell

124B: Air core

126:dent

130:Soft layer

30:Grinding stage

20A:Package structure

20A’, 20B’: semiconductor device

200,200A:Substrate

210,210A: connection structure

210W, 212W: Width

212: Cutting lane

220A: Chip

230A: Encapsulation glue

DH: Lower hot pressing mold

DL: release layer

E: Etching process

F: border

G: grinding device

M: metal layer

M1: first metal layer

M2: Second metal layer

R:Roller

RS: rewiring structure

S1: first side

S2, TS: second side

SW: side

SZ: size

T1, T2, T3, T4, T5: Thickness

UH: Upper hot pressing mold

z: horizontal distance

Figure 1 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention.

Figure 2 is a schematic cross-sectional view of a protective tape according to another embodiment of the present invention.

3A to 3D are schematic cross-sectional views of a processing method according to an embodiment of the present invention.

4A to 4C are schematic cross-sectional views of a processing method according to an embodiment of the present invention.

5A to 5C are schematic three-dimensional views of a processing method according to an embodiment of the present invention.

6A to 6C are schematic cross-sectional views of a processing method according to an embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention.

Figure 8 is a cross-section of a semiconductor device according to an embodiment of the present invention. Surface diagram.

In the drawings, the dimensions of some elements or layers are exaggerated or reduced for clarity. In addition, for clarity of illustration, some film layers or components may be omitted in the illustrations. Directional terms (eg, up, down, right, left, front, back, top, bottom) used herein are used only with reference to the drawings and are not intended to imply absolute orientation.

Figure 1 is a schematic cross-sectional view of a protective tape according to an embodiment of the present invention. Referring to FIG. 1 , the protective tape 100 includes a base 110 and an adhesive layer 120 . In some embodiments, before using the protective tape 100, the protective tape 100 is disposed on the release layer DL, where the adhesive layer 120 is located between the release layer DL and the substrate 110. When the protective tape 100 is to be used, the protective tape 100 is peeled off from the release layer DL, and then the protective tape 100 is attached to the object to be attached.

In some embodiments, the material of the substrate 110 includes polyethylene terephthalate (PET), polyurethane (PU), polyimide (PI), polyethylene naphthalate Combination of ester (Polyethylene naphthalate, PEN), polyethersulfones (PES), polyetherimide (PEI), polyetheretherketone (PEEK), polyphenylsulfone (PPSU) and the above materials or other suitable materials. In the embodiment where the base 110 is polyurethane, the base 110 can be thermoplastic polyurethane, but the invention does not This is the limit.

The thickness T1 of the substrate 110 is, for example, 12 microns to 188 microns. In some embodiments, the substrate 110 is, for example, a material layer that can be rolled, and the manufacturing method of the substrate 110 includes, for example, extraction molding, coating, or other suitable processes.

The adhesive layer 120 blanket covers the substrate 110 . In this embodiment, the adhesive layer 120 is directly formed on the substrate 110 .

The thickness T2 of the adhesive layer 120 is, for example, 30 microns to 500 microns. In some embodiments, the adhesive layer 120 is directly formed on the substrate 110 by coating, printing, or other suitable processes.

In some embodiments, a method of forming the protective tape 100 includes coating a coating on the substrate 110 , where the coating includes a main resin 122 , polymer microspheres 124 and a solvent (not shown). In some embodiments, the coating also includes bridging agents and additives. After the coating is applied on the substrate 110 , at least part of the solvent in the coating is evaporated to form the adhesive layer 120 .

In some embodiments, the aforementioned coating includes 30wt% to 50wt% (such as 30wt%, 40wt% or 50wt%) of the main resin, 1wt% to 5wt% bridging agent, 40wt% to 60wt% solvent, 1wt% to 5wt% % additives and 5 to 15 wt% (eg, 5 wt%, 10 wt% or 15 wt%) polymer microspheres.

In some embodiments, the main resin in the coating (or adhesive layer 120) includes acrylic resin, polyurethane resin, polysiloxane resin and other polymer materials. For example, the main resin includes 2-acrylic acid (2 -Propenoic acid), 2-methyl acrylate (Methyl 2-propenoate), Octadecyl 2-propenoate, 2-propenenitrile, 2,6,6-trimethylbicyclo[3.1.1]hept-2 - 2,6,6-trimethylbicyclo[3.1.1]hept-2-ene, phenol, polymers with ethenyl acetate or other suitable materials or combinations of the above materials. In some embodiments, the main resin 122 is a thermoplastic material and has a softening temperature. For example, the hardness of the main resin 122 at room temperature (eg, about 23 degrees Celsius) is Shore hardness 40A to 90A. When the main resin 122 is heated above the softening temperature, the hardness of the main resin 122 softens from Shore hardness 40A to 90A to less than Shore hardness 40A (eg, less than Shore hardness 20A or less than Shore hardness 75E2). In some embodiments, the primary resin 122 has a softening temperature in the range of 35 degrees Celsius to 80 degrees Celsius. For example, the softening temperature is about 40 degrees Celsius, 50 degrees Celsius, 60 degrees Celsius or 70 degrees Celsius.

In some embodiments, the solvent in the coating includes toluene, ethyl acetate, or other suitable materials or a combination of the above materials.

In some embodiments, the bridging agent in the coating (or adhesive layer 120) includes Trimethylolpropane tris(2-methyl-1-aziridinepropionate). )), isophorone diisocyanate (Isophorone diisocyanate) or other suitable materials or combinations of the above materials.

In some embodiments, additives in the coating (or adhesive layer 120) include leveling agents (e.g., polyether-modified polydimethylsiloxane), defoaming agents (e.g., polymeric material) or other suitable materials or combinations of the above materials.

In some embodiments, polymer microspheres 124 in the coating (or adhesive layer 120 ) are dispersed in the main resin 122 (and solvent), wherein each polymer microsphere 124 has a hollow structure. For example, each polymer microsphere 124 includes a polymer shell 124A and an air core 124B surrounded by the polymer shell 124A. In some embodiments, the polymer microspheres 124 have a size SZ of 6 microns to 50 microns. In some embodiments, polymer shell 124A has a thickness T4 of 2 microns to 15 microns.

In some embodiments, the material of polymer shell 124A includes acrylonitrile, acrylic, or other suitable materials or combinations thereof. In some embodiments, the hardness of polymer shell 124A is greater than the hardness of primary resin 122 at the softening temperature of primary resin 122 . In other words, when the adhesive layer 120 is heated to the softening temperature of the main resin 122, the main resin 122 will soften, but the polymer shell 124A will not soften. In some embodiments, the volume change of polymer microspheres 124 when heated from room temperature to the softening temperature of host resin 122 is less than 1-fold.

In some embodiments, polymer microspheres 124 have an expansion temperature. When the polymer microspheres 124 are heated to the expansion temperature, the polymer microspheres 124 will undergo significant volume changes. For example, the volume change of the polymer microsphere 124 after being heated from room temperature to the expansion temperature is 3 to 10 times. In some examples, the expansion temperature is 90 degrees Celsius to 270 degrees Celsius.

The release layer DL can be any release material. For example, the release layer DL is polyethylene terephthalate, PET), polyolefins (PO) or release paper. The thickness T3 of the release layer DL is, for example, 25 microns to 175 microns.

Figure 2 is a schematic cross-sectional view of a protective tape according to another embodiment of the present invention. It must be noted here that the embodiment of FIG. 2 follows the component numbers and part of the content of the embodiment of FIG. 1 , where the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

The main difference between the protective tape 100A of FIG. 2 and the protective tape 100 of FIG. 1 is that the protective tape 100A further includes a soft layer 130 . The soft layer 130 is located between the adhesive layer 120A and the substrate 110 .

In some embodiments, the adhesive layer 120A of FIG. 2 and the adhesive layer 120 of FIG. 1 include similar materials. The difference is that the adhesive layer 120A of the protective tape 100A has higher viscosity at room temperature. The thickness T2 of the adhesive layer 120A is 20 microns to 100 microns. Due to the stickiness of the adhesive layer 120A, the protective tape 100A can be adhered to other objects at room temperature.

The soft layer 130 in some embodiments of FIG. 2 and the adhesive layer 120 in some embodiments of FIG. 1 include similar materials. In some embodiments, the soft layer 130 and the adhesive layer 120A both include a main resin and polymer microspheres, but the contents of the polymer microspheres in the soft layer 130 and the adhesive layer 120A are different. In some embodiments, the soft layer 130 and the adhesive layer 120A both include a main resin and polymer microspheres, but the soft layer 130 and the adhesive layer 120A include different main resins. In some embodiments, the viscosity of the soft layer 130 at room temperature is less than that of the adhesive layer 120A at room temperature. sticky. In some embodiments, the thickness T5 of the soft layer 130 is, for example, 30 microns to 500 microns.

3A to 3D are schematic cross-sectional views of a processing method according to an embodiment of the present invention. It must be noted here that the embodiments of FIGS. 3A to 3D follow the component numbers and part of the content of the embodiment of FIG. 1 , where the same or similar numbers are used to represent the same or similar elements, and references with the same technical content are omitted. instruction. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

A substrate 200 is provided, including a first side S1 and a second side S2 opposite the first side S1. The substrate 200 is, for example, a wafer, a chip packaging structure, a circuit board, or other suitable electronic components. The first side S1 of the substrate 200 includes a plurality of connection structures 210. The connection structures 210 are, for example, solder balls, conductive pillars, active components, passive components or other similar components. In some embodiments, the width 210W of the connection structure 210 is 30 microns to 260 microns. In some embodiments, the connection structure 210 of the substrate 200 is suitable for Land Grid Array (LGA) technology, Ball Grid Array (BGA) technology, Chip scale package (CSP) technology. ), flip-chip packaging or other suitable packaging technology. Ball grid array packages include, for example, plastic ball grid array (PBGA), ceramic ball grid array (CBGA) or tape ball grid array (TBGA) packages.

A protective tape 100 as described in Figure 1 is provided. The protective tape 100 is heated to a softening temperature to soften the main resin 122 in the adhesive layer 120 . The connection structure 210 of the substrate 200 is pressed into the adhesive layer 120 of the protective tape 100 . For example, Use the roller R to press the connection structure 210 of the substrate 200 into the protective tape 100 .

In this embodiment, while pressing the substrate 200 against the protective tape 100, the adhesive layer 120 is heated to the softening temperature, but the invention is not limited to this. In other embodiments, the substrate 200 is first placed on the protective tape at room temperature, and then the substrate 200 and the protective tape are heated to a softening temperature. In this case, it is better to use a protective tape 100A whose surface is sticky at room temperature, as shown in Figure 2 .

After the protective tape 100 is heated to the softening temperature, the connection structure 210 is embedded in the softened adhesive layer 120 and is covered by it. The thickness of the adhesive layer 120 is greater than the thickness of the connection structure 210 .

In this embodiment, since the hardness of the main resin of the adhesive layer 120 is less than Shore hardness 40A (for example, less than Shore hardness 20A or less than Shore hardness 75E2) above the softening temperature, the adhesive layer 120 can be better coated The connection structure 210 is used to increase the contact area between the adhesive layer 120 and the connection structure 210 . The connection structure 210 sinks into the adhesive layer 120 , causing a depression 126 corresponding to the connection structure 210 to be formed on the adhesive layer 120 .

In some embodiments, the first side S1 of the substrate 200 further includes a scribe line 212 , and the adhesive layer 120 is filled in the scribe line 212 . In some embodiments, the width 212W of the scribe lines 212 is from 10 microns to 600 microns.

After the adhesive layer 120 covers the connection structure 210 , the protective tape 100 is cooled below the softening temperature (for example, to room temperature) to increase the hardness of the adhesive layer 120 , thereby fixing the substrate 200 on the protective tape 100 . Compared with the light-curing protective tape that fixes the substrate through light curing, the protective tape 100 used in the present disclosure The substrate 200 can be fixed only by using temperature changes. In addition to avoiding problems caused by uneven illumination, it can also avoid the negative impact of cross-linking reactions caused by illumination on the connection structure 210 .

In some embodiments, since the expansion temperature of the polymer microspheres 124 (please refer to FIG. 1 ) in the adhesive layer 120 is greater than the softening temperature of the main resin 122 (please refer to FIG. 1 ), after the protective tape 100 is heated to the softening temperature It will not cause the polymer microspheres 124 to expand significantly. For example, after the protective tape 100 is heated from room temperature to the softening temperature, the volume of the polymer microspheres 124 changes less than 1-fold.

Referring to FIG. 3B , by cutting the protective tape 100 , the protective tape 100 and the substrate 200 are aligned. In this embodiment, the protective tape 100 is aligned with the substrate 200 through a cutting process. Therefore, when attaching the protective tape 100 to the substrate 200 (the step shown in FIG. 3A ), there is no need to accurately align the protective tape 100 with the substrate 200 . The substrate 200 is positioned. Based on the above, compared to the precise positioning required to attach other hard supports (such as glass) to the substrate 200 through wax or other adhesive materials, this embodiment can more easily attach the protective tape 100 to the substrate 200. In addition, this embodiment will not affect subsequent processes due to misalignment during the bonding process.

In addition, in this embodiment, since the hardness of the protective tape 100 is lower than that of other hard supports, the wear on the blade when cutting the protective tape 100 can be reduced, thereby reducing the process cost.

Referring to FIG. 3C , the protective tape 100 and the substrate 200 are placed on the polishing stage 30 . In some embodiments, the protective tape 100 is fixed on the grinding stage 30 by electrostatic, vacuum or other means.

A processing process is performed on the second side S2 of the substrate 200 . For example, a grinding process is performed on the second side S2 of the substrate 200 . The second side S2 of the substrate 200 is polished with the polishing device G. In some embodiments, the grinding process reduces the thickness of the substrate 200 to less than 500 microns. In some embodiments, the TTV of the substrate 200 after the polishing process is less than or equal to 3 microns. In some embodiments, the warpage value of the substrate 200 after the grinding process is less than 6 mm.

In some embodiments, the grinding process is, for example, chemical mechanical grinding, physical grinding or other grinding processes. In some embodiments, the temperature during the grinding process is room temperature. In some embodiments, when polishing the second side S2 of the substrate 200, a polishing liquid is applied on the second side S2 of the substrate 200. Since the protective tape 100 covers the connection structure 210 , the polishing liquid used in the polishing process can be prevented from contaminating the first side S1 of the substrate 200 .

Referring to FIG. 3D , the protective tape 100 is heated to the expansion temperature of the polymer microspheres 124 (please refer to FIG. 1 ), so that the polymer microspheres 124 expand and the substrate 200 is pushed out. In some embodiments, the expansion of the polymer microspheres 124 causes the overall thickness of the protective tape 100 to increase, and pushes the connection structure 210 in the recess 126 , reducing the covering ability of the protective tape 100 on the connection structure 210 .

The expansion of the polymer microspheres 124 includes irreversible changes. In other words, even if the protective tape 100 is cooled to room temperature again, the polymer microspheres 124 will not return to its original volume, and the thickness of the protective tape 100 will not change. Return to original thickness.

In this embodiment, the protective tape 100 has the advantages of being easy to remove and leaving no adhesive residue. Therefore, removing the protective tape 100 will not cause damage to the substrate 200 . also, Since the protective tape 100 is not easily left on the substrate 200, no additional cleaning process is required for the substrate 200.

In some embodiments, the connection structure 210 on the substrate 200 includes Micro Electro Mechanical Systems (MEMS). In this embodiment, the protective tape 100 can be heated to push the substrate 200 out, thereby reducing peeling. Damage to MEMS when removing protective tape 100.

In some embodiments, after removing the protective tape 100 , a singulation process or other processes are performed on the substrate 200 along the dicing lane 212 to obtain semiconductor devices (eg, including power wafers, power MOSFETs). ), Insulated Gate Bipolar Transistor (IGBT), three-dimensional chip, diode (such as light-emitting diode (LED)) or other electronic components).

4A to 4C are schematic three-dimensional views of a processing method according to an embodiment of the present invention. It must be noted here that the embodiment of FIGS. 4A to 4C follows the component numbers and part of the content of the embodiment of FIGS. 3A to 3C , where the same or similar numbers are used to represent the same or similar elements, and the same or similar elements are omitted. Description of technical content. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

Continuing with the steps of FIG. 3C , after grinding the second side S2 of the substrate 200 , an etching process E is performed on the second side S2 of the substrate 200 .

Referring to FIG. 4B , a physical vapor deposition (PVD) process is performed on the second side S2 of the substrate 200 to deposit the second side S2 of the substrate 200 on the second side S2 of the substrate 200 . Side S2 forms metal layer M.

In some embodiments, the physical vapor deposition process is performed at high vacuum (for example, 10 ^-7 torr) and high temperature (for example, 150 degrees Celsius). Since the protective tape 100 has heat-resistant and vacuum-resistant properties, the protective tape 100 is in the physical vapor phase. It will not be separated from the substrate 200 during the deposition process, so that the metal deposited by the physical vapor deposition process will not easily invade the first side S1 of the substrate 200, thereby preventing the connection structure 210 from being short-circuited.

In some embodiments, the temperature during the physical vapor deposition process is lower than the expansion temperature of the polymer microspheres 124 (please refer to FIG. 1 ) in the protective tape 100, so the protective tape 100 will not appear during the physical vapor deposition process. Significant volume changes.

In some embodiments, the material of the metal layer M includes silver, titanium, nickel, copper or other suitable materials. When the metal layer M is silver, the transmission efficiency of the substrate 200 can be improved. When the metal layer M is titanium, nickel or copper, it can effectively help the substrate 200 dissipate heat quickly, allowing the substrate 200 to maintain a better operating temperature. In some embodiments, the metal layer M is a single-layer or multi-layer structure. When the metal layer M is a multi-layer structure, the metal layer M may include different materials.

In this embodiment, the same protective tape 100 is used for the grinding process, the etching process and the physical vapor deposition process. In other words, the protective tape 100 does not need to be removed before performing the etching process and the physical vapor deposition process, and other protective tapes do not need to be attached to the first side S1 of the substrate 200 . Therefore, the processing cost of the substrate 200 can be reduced.

Next, please refer to Figure 4C, the protective tape 100 is heated to the expansion temperature of the polymer microspheres 124 (please refer to Figure 1), so that the polymer microspheres 124 expand, and the base The plate 200 is pushed out.

In some embodiments, after the protective tape 100 is removed, a single singulation process or other process is performed on the substrate 200 along the dicing lane 212 to obtain the intended semiconductor device.

5A to 5C are schematic three-dimensional views of a processing method according to an embodiment of the present invention. 6A to 6C are schematic cross-sectional views of a processing method according to an embodiment of the present invention. Figures 6A to 6C respectively correspond to the positions of line a-a' in Figures 5A to 5C. It must be noted here that the embodiments of FIGS. 5A to 5C and 6A to 6C follow the component numbers and part of the content of the embodiment of FIG. 1 , where the same or similar numbers are used to represent the same or similar elements, and Explanations of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

Please refer to FIG. 5A and FIG. 6A to provide a protective tape 100 . In this embodiment, the specific structure of the protective tape 100 can be referred to FIG. 1 and the related description of FIG. 1 , and will not be described again here. The frame F is attached to the adhesive layer 120 of the protective tape 100 .

Referring to FIG. 5B and FIG. 6B , the packaging structure 20A is placed on the protective tape 100 , with the first side S1 of the packaging structure 20A facing the protective tape 100 . In this embodiment, since there is no need to form openings corresponding to the connection structures 210A of the packaging structure 20A in the protective tape 100 in advance, the protective tape 100 can be adapted to packaging structures 20A of various shapes or sizes.

In some embodiments, the packaging structure is moved by a robot (not shown) 20A lined on protective tape 100.

For example, the packaging structure 20A includes a substrate 200A, a plurality of connection structures 210A, a chip 220A, a rewiring structure RS, and a packaging glue 230A. The chip 220A is located on the substrate 200A and is electrically connected to the substrate 200A through the redistribution structure RS. For example, the chip 220A is packaged on the substrate 200A through flip-chip packaging technology.

The substrate 200A is, for example, a printed circuit board. The chip 220A and the connection structure 210A are located on opposite sides of the substrate 200A. Specifically, the connection structure 210A is located on the first side S1 of the substrate 200A, and the chip 220A and the redistribution structure RS are located on the second side S2 of the substrate 200A. In this embodiment, the first side S1 of the substrate 200A is the outside of the packaging structure 20A. In other words, the first side S1 may also be called the first side S1 of the packaging structure 20A. The encapsulant 230A is located on the substrate 200A and covers the chip 220A.

In some embodiments, the connection structure 210A is suitable for Land Grid Array (LGA) technology or Ball Grid Array (BGA) technology. The horizontal distance z between the outermost connection structure 210A and the edge of the substrate 200A is 10 microns to 200 microns. In some embodiments, the ball grid array package of package structure 20A has the advantage of a narrow bezel. For example, the horizontal distance z is less than or equal to 100 microns.

In some embodiments, at the softening temperature of the main resin 122 of the adhesive layer 120 (please refer to FIG. 1 ), the adhesive layer 120 is attached to the first side S1 of the substrate 200A, and the connection structure 210A is pressed into the softened adhesive layer. 120, but the new innovation The work is not limited to this. In other embodiments, the substrate 200A is first placed on the protective tape 100 at room temperature, and then the substrate 200A and the protective tape 100 are heated to the softening temperature. In this case, it is better to use a protective tape 100A whose surface is sticky at room temperature, as shown in FIG. 2 .

In some embodiments, the upper heat pressing mold UH and the lower heat pressing mold DH are used to heat and pressurize the substrate 200A and the protective tape 100 . In other words, the protective tape 100 is heated to a temperature above the softening temperature (for example, 60 degrees Celsius) through the upper heat pressing mold UH and the lower heat pressing mold DH.

The adhesive layer 120 of the protective tape 100 contacts the substrate 200A and the connection structure 210A. Since the hardness of the adhesive layer 120 after being heated to the softening temperature is less than Shore hardness 40A, the adhesive layer 120 can better cover the connection structure 210A, thereby increasing the contact area between the adhesive layer 120 and the packaging structure 20A. The connection structure 210A sinks into the adhesive layer 120 , causing a depression 126 corresponding to the connection structure 210 to be formed on the adhesive layer 120 .

After the adhesive layer 120 covers the connection structure 210A, the protective tape 100 is cooled below the softening temperature (for example, to room temperature) so that the hardness of the adhesive layer 120 increases, thereby fixing the substrate 200A to the protective tape 100, and This reduces the probability of the package structure 20A being deflected in subsequent processes.

Referring to FIG. 5C and FIG. 6C , the first metal layer M1 is deposited on the second side TS of the packaging structure 20A, where the second side TS is the side of the packaging structure 20A away from the protective tape 100 . In this embodiment, the first metal layer M1 is deposited on the second side TS of the packaging structure 20A, the side SW of the packaging structure 20A, and the protective tape 100 And on the border F. In some embodiments, the first metal layer M1 is formed on the encapsulant 230A, the adhesive layer 120 and the frame F. Since the connection structure 210A is located in the adhesive layer 120, the first metal layer M1 will not contact the connection structure 210A, thereby avoiding the problem of short circuit of the connection structure 210A.

In some embodiments, the method of forming the first metal layer M1 includes a physical vapor deposition (PVD) process. In some embodiments, the physical vapor deposition process is performed at high vacuum (for example, 10-7torr) and high temperature (for example, 150 degrees Celsius). Since the protective tape 100 has heat-resistant and vacuum-resistant properties, the protective tape 100 can be deposited during physical vapor deposition. It will not be separated from the substrate 200A during the process, so that the metal deposited by the physical vapor deposition process will not easily invade the first side S1 of the substrate 200A, thereby preventing the connection structure 210 from being short-circuited.

In some embodiments, the temperature during the physical vapor deposition process is lower than the expansion temperature of the polymer microspheres 124 (please refer to FIG. 1 ) in the protective tape 100, so the protective tape 100 will not appear during the physical vapor deposition process. Significant volume changes.

In some embodiments, the material of the first metal layer M1 includes silver, titanium, nickel, copper or other suitable materials. When the first metal layer M1 is silver, it can improve the transmission efficiency of the substrate 200A. When the first metal layer M1 is titanium, nickel or copper, it can effectively help the substrate 200 dissipate heat quickly, allowing the substrate 200A to maintain a better operating temperature.

Next, please refer to FIG. 6C and FIG. 7 , the protective tape 100 is heated to the expansion temperature of the polymer microspheres 124 (please refer to FIG. 1 ), so that the polymer microspheres 124 expand, and the substrate 200A is pushed out. Next, the packaging structure 20A is removed from the protective tape 100 . Part of the first metal layer M1 is removed along with the package structure 20A. Take it up to form the semiconductor device 20A'. In some embodiments, since the protective tape 100 has pushed out the substrate 200A, the semiconductor device 20A' can be easily picked up without using a ejector pin, thereby avoiding damage to the connection structure 210A caused by the ejector pin.

In some embodiments, the semiconductor device 20A' is, for example, a power chip, a radio frequency chip, an optoelectronic component, a high-speed transmission chip, an electrostatic protection chip, or other electronic components.

FIG. 8 is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 8 follows the component numbers and part of the content of the embodiment of FIG. 7 , where the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

The main difference between the semiconductor device 20B' of FIG. 8 and the semiconductor device 20A' of FIG. 7 is that the semiconductor device 20B' includes a plurality of wafers 220A and a plurality of redistribution structures RS, and the semiconductor device 20B' includes a first metal layer M1 and a third metal layer M1. Two metal layers M2.

Please refer to FIG. 8. In this embodiment, the semiconductor device 20B' integrates a plurality of chips 220A, wherein the plurality of chips 220A are electrically connected to the substrate 200A through the redistribution structure RS. The connection structure 210A and the chip 220A are respectively located on different sides of the substrate 200A.

In this embodiment, after the first metal layer M1 is formed, the second metal layer M2 is deposited on the first metal layer M1, and then the package structure is removed from the protective tape 100 (please refer to FIG. 6C). In some embodiments, the first metal layer M1 The material of M2 includes copper, and the material of the second metal layer M2 includes stainless steel, but the present invention is not limited thereto. The materials of the first metal layer M1 and the second metal layer M2 can be adjusted according to actual requirements.

Based on the above, the protective tape can protect the connection structure of the packaging structure when depositing the metal layer and avoid short circuit of the connection structure. Compared with using customized metal fixtures to protect connection structures, protective tape can be applied to various types of packaging structures, thereby saving the cost of depositing metal layers. In addition, the cost required for maintaining the metal fixture (such as the cost of planing and brushing the metal layer deposited on the metal fixture) can also be saved.

100:Protective tape

110: Base

120:Adhesive layer

126:dent

20A:Package structure

200A:Substrate

210A: Connection structure

220A: Chip

230A: Encapsulation glue

DH: Lower hot pressing mold

F: border

RS: rewiring structure

S1: first side

S2: Second side

UH: Upper hot pressing mold

z: horizontal distance

Claims (7)

A protective tape including: a base; and An adhesive layer is located on the substrate and includes: a main resin, wherein the main resin has a softening temperature of 35 degrees Celsius to 80 degrees Celsius; and A plurality of polymer microspheres are dispersed in the main resin, wherein each polymer microsphere has a hollow structure. The protective tape of claim 1, wherein when the main resin is heated above the softening temperature, the hardness of the main resin softens from a Shore hardness of 40A to 90A and becomes less than a Shore hardness of 40A. The protective tape of claim 1, wherein the size of the polymer microspheres is 6 to 50 microns. The protective tape of claim 1, wherein the volume change of the polymer microspheres when heated from room temperature to the softening temperature is less than 1 time. The protective tape of claim 1, wherein the volume change of the polymer microspheres when heated from room temperature to an expansion temperature is 3 to 10 times, wherein the expansion temperature is 90 degrees Celsius to 270 degrees Celsius. The protective tape as described in claim 1 further includes: A soft layer is located between the adhesive layer and the substrate, wherein the viscosity of the soft layer at room temperature is less than the viscosity of the adhesive layer at room temperature. The protective tape according to claim 1, wherein each polymer microsphere includes: a polymer shell, wherein the hardness of the polymer shell at the softening temperature is greater than the hardness of the host resin; and An air core is surrounded by the polymer shell.

Images