CN110277082A - A kind of phonon crystal and film piezo-electric sonic sensor - Google Patents
A kind of phonon crystal and film piezo-electric sonic sensor Download PDFInfo
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- CN110277082A CN110277082A CN201910420968.2A CN201910420968A CN110277082A CN 110277082 A CN110277082 A CN 110277082A CN 201910420968 A CN201910420968 A CN 201910420968A CN 110277082 A CN110277082 A CN 110277082A
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- 239000013078 crystal Substances 0.000 title claims abstract description 222
- 239000000758 substrate Substances 0.000 claims abstract description 80
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- 239000000463 material Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 46
- 229910052750 molybdenum Inorganic materials 0.000 claims description 46
- 239000011733 molybdenum Substances 0.000 claims description 46
- 230000000737 periodic effect Effects 0.000 claims description 21
- 230000002463 transducing effect Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 10
- 230000010358 mechanical oscillation Effects 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 71
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- 239000012528 membrane Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
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- 230000035945 sensitivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K9/00—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers
- G10K9/12—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated
- G10K9/122—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated using piezoelectric driving means
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Abstract
The invention discloses a kind of film piezo-electric sonic sensors, comprising: the side of substrate layer, ground electrode layer and the piezoelectric layer being stacked, piezoelectric layer remotely electrode layer is provided at least one energy converter；The two sides of energy converter are respectively arranged with the phonon crystal at least formed on piezoelectric layer, and the resonance frequency of film piezo-electric sonic sensor is located in the band gap of phonon crystal.Phonon crystal is at least set on piezoelectric layer by above-mentioned film piezo-electric sonic sensor, improves the stability of piezoelectric layer mechanical oscillation, is improved to sound wave reflectivity, and the energy loss of sonic transmissions reduces, and sensor quality factor are promoted.The invention discloses a kind of phonon crystals, and including matrix and the scatterer being formed on matrix, matrix is laminated by least two layers of dielectric layer and is formed, and the material of any one layer of dielectric layer is different from other dielectric layers.Above-mentioned phonon crystal can effectively reduce acoustic wave energy loss, applied to the quality factor that can effectively improve sensor in film piezo-electric sonic sensor.
Description
Technical field
The present invention relates to sensor technical fields, and in particular to a kind of phonon crystal and film piezo-electric sonic sensor.
Background technique
Piezoelectric membrane can be realized the conversion between electric energy and mechanical energy, film piezo-electric sound wave sensing using its piezoelectric effect
Device makes effective tuned mass of sensor substantially using high performance thin films of piezoelectric material and fast-developing minute manufacturing technology
Degree reduces, and working frequency is continuously improved, and detection sensitivity can compare favourably with optical sensor.Moreover, due to film pressure
The manufacture craft of electroacoustic wave sensor is compatible with CMOS technology, integrated and mass manufacture of being more convenient for, various hyundai electronics,
The fields such as the communication technology, analysis detection are with a wide range of applications.However, by sound wave can radiation loss influenced, film
Piezoelectric acoustic transducer is not easy to obtain high quality factor (Q), the inspection that can not be effectively improved sensor signal-to-noise ratio, reduce sensor
Limit is surveyed, is unfavorable for obtaining high performance film piezo-electric sonic sensor.
Phonon crystal is a kind of density and elastic constant is in the new structure of periodic distribution.It is tied by the period of phonon crystal
Structure effect, band structure can be generated when elastic wave is propagated in phonon crystal, elastic wave is prohibited within the scope of certain frequency
It propagates (forbidden band), and loss-free can propagate (passband) in other frequency ranges, the frequency that these elastic waves cannot be propagated
Range is referred to as the band gap of phonon crystal.The band gap properties of phonon crystal make its noise suppressed be isolated, the vibration of precision instrument
Dynamic control etc. has broad application prospects.In the prior art, phonon crystal and film piezo-electric sonic sensor are mutually tied
It closes, the reflecting grating in film piezo-electric sonic sensor is replaced using the band gap properties of phonon crystal, to improve film piezo-electric sound wave
The quality factor of sensor.But in the film piezo-electric sensor of existing setting phonon crystal, phonon crystal is generally positioned at not
In the silicon substrate structure for covering piezoelectric membrane, the energy constraint for reflecting sound wave via phonon crystal is unfavorable for film piezo-electric sound
The raising of the quality factor of wave sensor.
Summary of the invention
Therefore, the technical problem to be solved in the present invention is that overcoming the film piezo-electric sound that phonon crystal is arranged in the prior art
The energy constraint that wave sensor reflects sound wave cannot effectively improve the defect of the quality factor of film piezo-electric sonic sensor.
For this purpose, the invention provides the following technical scheme:
In a first aspect, the present invention provides a kind of film piezo-electric sonic sensors, comprising: the substrate layer that is stacked,
Electrode layer and piezoelectric layer, the piezoelectric layer are provided at least one energy converter far from the side of the ground electrode layer；The transducing
The two sides of device are respectively arranged with the phonon crystal at least formed on the piezoelectric layer, the resonance of the film piezo-electric sonic sensor
Frequency is located in the band gap of the phonon crystal.
Optionally, above-mentioned film piezo-electric sonic sensor, the phonon crystal include scatterer and matrix, described matrix
It is at least made of the piezoelectric layer, the scatterer is the periodic arrangement that described matrix is extended vertically through along the stacking direction
Through-hole；
Preferably, the through-hole is cylindrical hole, and the through-hole arranges to form the phonon crystal with square lattice.
Optionally, above-mentioned film piezo-electric sonic sensor, the substrate layer are opened up far from the side of the ground electrode layer
Fluted, the phonon crystal is located in first area corresponding to the groove.
Optionally, above-mentioned film piezo-electric sonic sensor, the matrix of the phonon crystal are the piezoelectric layer, the sound
The scatterer of sub- crystal is the through-hole by extending vertically through the periodic arrangement of the piezoelectric layer；
Preferably, the piezoelectric layer is aln layer；Preferably, the aln layer with a thickness of 2.2 μm.
Optionally, above-mentioned film piezo-electric sonic sensor, the matrix of the phonon crystal is by the piezoelectric layer and described
Ground electrode layer composition, the scatterer of the phonon crystal are the periodical row for extending vertically through the piezoelectric layer and the ground electrode layer
The through-hole of column；
Preferably, the piezoelectric layer is aln layer, and the ground electrode layer is molybdenum layer；Preferably, the aln layer
With a thickness of 2.2 μm, the molybdenum layer with a thickness of 0.2 μm.
Optionally, above-mentioned film piezo-electric sonic sensor, the matrix of the phonon crystal is by the piezoelectric layer, described
Electrode layer and substrate layer composition, the scatterer of the phonon crystal are to extend vertically through the piezoelectric layer, the ground electrode layer
With the through-hole of the periodic arrangement of the substrate layer；
Preferably, the piezoelectric layer is aln layer, and the ground electrode layer is molybdenum layer, and the substrate layer is silicon substrate layer；
Preferably, the aln layer with a thickness of 2.2 μm, the molybdenum layer with a thickness of 0.2 μm, form the described of the phonon crystal
Silicon substrate layer with a thickness of 2.2 μm.
Optionally, above-mentioned film piezo-electric sonic sensor, at least one described energy converter include horizontal be oppositely arranged
Energy converter and output transducer are inputted, the phonon crystal is distributed in the input energy converter back to the one of the input energy converter
Side and the output transducer are back to the side of the input energy converter.
Optionally, above-mentioned film piezo-electric sonic sensor, the phonon crystal energy converter adjacent thereto away from
Distance (n* λ)/2, the n of the adjacent energy converter is the integer not less than 1 with a distance from the reflecting surface for making the phonon crystal.
Second aspect, the present invention provides a kind of phonon crystal, the phonon crystal includes matrix and is formed in the base
Scatterer on body, described matrix are laminated by least two layers of dielectric layer and are formed, the material of any one layer of dielectric layer and other described in
Dielectric layer is different；The scatterer be along the dielectric layer stacking direction extend vertically through described matrix periodic arrangement it is logical
Hole.
Optionally, the matrix of above-mentioned phonon crystal, the phonon crystal is laminated by aln layer, molybdenum layer and silicon substrate layer
It is formed, the through-hole extends vertically through the aln layer, the molybdenum layer and the silicon substrate layer, and the through-hole is arranged with square-lattice
Column；
Preferably, the aln layer with a thickness of 2.2 μm, the molybdenum layer with a thickness of 0.2 μm, the silicon substrate layer
With a thickness of 2.2 μm.
Technical solution of the present invention has the advantages that
1. film piezo-electric sonic sensor provided by the invention, comprising: substrate layer, ground electrode layer and the piezoelectricity being stacked
The side of layer, piezoelectric layer remotely electrode layer is provided at least one energy converter；The two sides of energy converter are respectively arranged at least shape
It is located in the band gap of phonon crystal at the resonance frequency in the phonon crystal of piezoelectric layer, film piezo-electric sonic sensor.
Above-mentioned film piezo-electric sonic sensor, the two sides of energy converter are respectively arranged with phonon crystal, by transducer excitation
The sound wave of generation is propagated to phonon crystal.Based on Bragg diffraction mechanism, the sound wave of specific frequency can not pass in phonon crystal
It broadcasts, generates the band gap of phonon crystal.Using the band gap properties of phonon crystal, make the resonance frequency position of film piezo-electric sonic sensor
In in the band gap of phonon crystal, can be realized the total reflection to the sound wave generated by energy converter, sound of the sound wave in energy converter two sides
It propagates, is limited between the phonon crystal of two sides between sub- crystal, form mechanical resonant.It, can by the way that phonon crystal is arranged
The energy loss in propagation process of sound wave is reduced, the quality factor (Q) of film piezo-electric sonic sensor are improved.
Phonon crystal in the prior art is generally opened on the substrate layer of not set piezoelectric layer, and phonon crystal is located at non-vibration
Dynamic region.The present invention is reflected by will limit the study found that when phonon crystal is only arranged at substrate layer by phonon crystal
Acoustic wave energy, particularly, the phonon crystal for being set to substrate layer merely are limited to the improvement of longitudinal wave dissipation of energy, make film pressure
The quality factor of electroacoustic wave sensor cannot effectively improve.Further, present invention discover that when phonon crystal is set to pressure
When electric layer, the mechanical oscillation of piezoelectric layer do not influence the band gap properties setting of phonon crystal, can still obtain with complete band gap
Phonon crystal.Therefore, phonon crystal is set at least formed on piezoelectric layer by the present invention, on the one hand, makes film piezo-electric sound
The stability of wave sensor mechanical oscillation improves；On the other hand, it using the band gap properties of phonon crystal, can further decrease thin
The loss of acoustic wave energy in film piezoelectric acoustic transducer, effectively improves the quality factor of film piezo-electric sonic sensor, detection
Limit further decreases.
2. film piezo-electric sonic sensor provided by the invention, phonon crystal include scatterer and matrix, matrix is at least wrapped
Piezoelectric layer is included, scatterer is the through-hole for extending vertically through the periodic arrangement of matrix in the stacking direction.Phonon crystal is two-dimension phonon
Crystal can be realized with two-dimensional structure and be limited the three-dimensional of sound wave.The through-hole of periodic arrangement forms the scatterer of phonon crystal
Density variation is big between the matrix of (air), scatterer and phonon crystal, can obtain the phonon crystal of broad-band gap, realizes to edge
Effective reflection of sound wave and the longitudinal wave propagated along piezoelectric layer thickness direction that piezoelectric layer surface is propagated, limits dissipation of energy,
Obtain the film piezo-electric sonic sensor of high quality factor.
3. film piezo-electric sonic sensor provided by the invention, the side of substrate layer remotely electrode layer open up it is fluted,
Phonon crystal is located in first area corresponding to groove.By opening up groove, the interface for contacting substrate layer formation with air,
To which sound wave is limited on piezoelectric layer.Phonon crystal is located in first area corresponding to the groove, makes phonon crystal position
In in effective resonance range of film piezo-electric sensor, the high-efficiency reflective to acoustic wave energy is formed.
4. film piezo-electric sonic sensor provided by the invention, the matrix of phonon crystal can by piezoelectric layer, piezoelectric layer and
Ground electrode layer or piezoelectric layer, ground electrode layer and substrate layer composition, the scatterer of phonon crystal is the period for extending vertically through matrix
Property arrangement through-hole.The present invention passes through the study found that when the matrix of phonon crystal is piezoelectric layer, and piezoelectric layer is aln layer,
Be arranged aln layer with a thickness of 2.2 μm when, can obtain the widest phonon crystal of band gap, realize to wide frequency ranges sound wave
Effectively reflection.When the matrix of phonon crystal is made of piezoelectric layer and ground electrode layer, piezoelectric layer is aln layer, ground electrode layer is
Molybdenum layer, when aln layer with a thickness of 2.2 μm, molybdenum layer with a thickness of 0.2 μm when, can obtain the widest phonon crystal of band gap.
When the matrix of phonon crystal is made of piezoelectric layer, ground electrode layer and substrate layer, piezoelectric layer is aln layer, ground electrode layer is molybdenum
Layer, substrate layer are silicon substrate layer, when aln layer with a thickness of 2.2 μm, molybdenum layer with a thickness of 0.2 μm, form phonon crystal
Silicon substrate layer with a thickness of 2.2 μm when, the widest phonon crystal of band gap can be obtained.
In addition, the present invention passes through the study found that the matrix when phonon crystal is set as by piezoelectric layer, ground electrode layer and substrate
When layer composition, the energy transfer losses value of sound wave is minimum after being reflected by phonon crystal, and then obtains the optimal film of quality factor
Piezoelectric acoustic transducer.
5. film piezo-electric sonic sensor provided by the invention, at least one energy converter includes the horizontal input being oppositely arranged
Energy converter and output transducer obtain electric signal by input energy converter, and piezoelectric layer is converted electrical signals to by inverse piezoelectric effect
Mechanical oscillation generate sound wave；Energy converter is inputted back to the side of input energy converter and output transducer back to input energy converter
Side is provided with phonon crystal, forms the total reflection to sound wave, and incidence wave is superimposed between the phonon crystal of two sides with back wave,
Mechanical resonant is generated, the energy loss of sound wave is effectively reduced, is then turned sound wave by piezoelectric effect by output interdigital transducer
Turn to electric signal output.
6. phonon crystal provided by the invention, matrix is laminated by least two layers of dielectric layer and is formed, any one layer of dielectric layer
Material is different from other dielectric layers, scatterer be along dielectric layer stacking direction extend vertically through matrix periodic arrangement it is logical
Hole.Above-mentioned phonon crystal is complex phonon crystal, high to the reflectivity of sound wave, can effectively reduce the transmission damage of acoustic wave energy
Consumption, is applied to film piezo-electric sonic sensor, can obtain the sensor of high quality factor.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural schematic diagram for the phonon crystal that the embodiment of the present invention 1 provides；
Fig. 2 is the structural schematic diagram for the unit cell phonon crystal that the embodiment of the present invention 1 provides；
Fig. 3 is a kind of forbidden band figure for phonon crystal that the embodiment of the present invention 1 provides；
Fig. 4 is the forbidden band figure for another phonon crystal that the embodiment of the present invention 2 provides；
Fig. 5 is the forbidden bandwidth for the phonon crystal that the embodiment of the present invention 1 provides with the variation diagram of aln layer thickness；
Fig. 6 is the forbidden bandwidth for the phonon crystal that the embodiment of the present invention 1 provides with the variation diagram of molybdenum layer thickness；
Fig. 7 is the forbidden bandwidth for the phonon crystal that the embodiment of the present invention 1 provides with the variation diagram of silicon substrate layer thickness；
Fig. 8 is the forbidden bandwidth for the phonon crystal that the embodiment of the present invention 1 provides with the variation of aln layer, molybdenum layer thickness
Figure；
Fig. 9 is the forbidden bandwidth for the phonon crystal that the embodiment of the present invention 1 provides with silicon substrate layer, the variation of molybdenum layer thickness
Figure；
Figure 10 is the forbidden bandwidth for the phonon crystal that the embodiment of the present invention 1 provides with silicon substrate layer, aln layer thickness
Variation diagram；
Figure 11 is the structural schematic diagram for the film piezo-electric sensor that the embodiment of the present invention 2 provides；
Figure 12 be in the film piezo-electric sensor that provides of the embodiment of the present invention 2 between phonon crystal and interdigital transducer away from
From schematic diagram；
Figure 13 is the band gap of phonon crystal in experimental example 1 of the present invention with the variation diagram of filling rate；
Figure 14 is the testing result figure that sonic transmissions are lost in phonon crystal in the embodiment of the present invention 2 and comparative example 1；
Description of symbols:
1- phonon crystal, 11- matrix, 12- scatterer；2- substrate layer；3- ground electrode layer；4- piezoelectric layer；5- is changed
It can device.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second ",
" third " is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
As long as in addition, the non-structure each other of technical characteristic involved in invention described below different embodiments
It can be combined with each other at conflict.
Embodiment 1
The present embodiment provides a kind of phonon crystal 1, phonon crystal 1 is by matrix 11 and the scatterer 12 being formed on matrix 11
It constitutes.As depicted in figs. 1 and 2, the matrix 11 of phonon crystal 1 is three layers of medium by piezoelectric layer 4, ground electrode layer 3 and substrate layer 2
Layer stacks gradually the compound medium layer to be formed；The periodic arrangement for extending vertically through matrix 11 is offered along the stacking direction of dielectric layer
Through-hole, formed phonon crystal 1 scatterer 12.
Specifically, unit cell phonon crystal 1 as shown in Figure 2, through-hole are through the cylindrical hole of complex phonon crystal 1, Fig. 2
The smallest Periodic Building Unit of middle display phonon crystal 1.Unit cell phonon crystal 1 is arranged with square lattice, is formed such as Fig. 1 institute
The phonon crystal 1 with periodic arrangement through-hole shown, wherein through-hole extends along the length and width direction of phonon crystal 1, shape
At array arrangement mode.
As a kind of variant embodiment, above-mentioned phonon crystal 1, matrix 11 be can also be by two layers, four layers etc.
Dielectric layer is laminated to be formed, for example, matrix 11 is that the compound medium layer formed, scatterer 12 is laminated by piezoelectric layer 4 and ground electrode layer 3
Be along dielectric layer stacking direction extend vertically through matrix 11 periodic arrangement through-hole.
The test of 1 band gap of phonon crystal
1, it selects using aln layer as piezoelectric layer 4, for molybdenum layer as ground electrode layer 3, silicon substrate layer is right as substrate layer 2
The band gap of above-mentioned phonon crystal 1 is tested.Wherein, the distance between neighbouring two through hole a is 20 μm in phonon crystal 1, through-hole radius r
It is 8.7 μm, the thickness h of compound medium layer is 4.2 μm, obtains the forbidden band figure of phonon crystal 1 as shown in Figure 3.From the figure 3, it may be seen that
The above-mentioned phonon crystal 1 being formed on compound medium layer remains with the forbidden band characteristic of phonon crystal 1, is suitable for the application of in film piezo-electric
In sonic sensor.
2, test forms influence of the thickness of each dielectric layer of phonon crystal 1 to 1 band gap width of phonon crystal, specifically such as
Under:
(1) for phonon crystal 1 only using aln layer as matrix 11, scatterer 12 is the periodicity for extending vertically through aln layer
The through-hole of arrangement detects influence of the aln layer thickness change to 1 band gap width of phonon crystal, as a result as shown in figure 5, with nitrogen
Change the increase of aluminum layer thickness, the band gap of phonon crystal 1 is in the variation tendency for gradually broadening and then narrowing, when the thickness of aln layer
When being 2.2 μm, the widest phonon crystal 1 of band gap can be obtained.The above results show in film piezo-electric sensor, with nitridation
Aluminium layer is that the phonon crystal 1 of matrix 11 is able to maintain its band gap properties, and the optimum thickness value of aln layer is 2.2 μm.
(2) for phonon crystal 1 only using the aln layer that is stacked and molybdenum layer as matrix 11, scatterer 12 is to extend vertically through
The through-hole of the periodic arrangement of aln layer and molybdenum layer.Set aln layer with a thickness of 2.2 μm, by the thickness of molybdenum layer by 0.2 μ
M is gradually increased to 0.8 μm, detects influence of the aln layer thickness change to 1 band gap width of phonon crystal, as a result as shown in fig. 6,
With the increase of molybdenum layer thickness, the band gap width of phonon crystal 1 is in that the trend to narrow can be obtained when molybdenum layer is with a thickness of 0.2 μm
To the widest phonon crystal 1 of band gap.The above results show in film piezo-electric sensor, with the compound of aln layer and molybdenum layer
Dielectric layer is that the phonon crystal 1 of matrix 11 is able to maintain its band gap properties, and the optimum thickness value of aln layer is in phonon crystal 1
2.2 μm, the optimum thickness value of molybdenum layer is 0.2 μm.
(3) phonon crystal 1 is only using the aln layer, molybdenum layer and silicon substrate layer that are stacked as matrix 11, scatterer 12
For extend vertically through aln layer, molybdenum layer and silicon substrate layer periodic arrangement through-hole.Set aln layer with a thickness of 2.2 μ
M, molybdenum layer with a thickness of 0.2 μm, change silicon substrate layer thickness, detect silicon substrate layer thickness change to 1 band gap width of phonon crystal
Influence, as a result as shown in fig. 7, with silicon substrate layer thickness increase, the band gap width of phonon crystal 1 narrows afterwards in first broadening
Trend can obtain the widest phonon crystal 1 of band gap when silicon substrate layer is with a thickness of 2.2 μm.The above results show thin
In membrane pressure electric transducer, it can be protected by the phonon crystal 1 of matrix 11 of the compound medium layer of aln layer, molybdenum layer and silicon substrate layer
Its band gap properties is held, the optimum thickness value of aln layer is 2.2 μm in phonon crystal 1, and the optimum thickness value of molybdenum layer is 0.2 μm,
The optimum thickness value of silicon substrate layer is 2.2 μm.
3, influence of the acoustic velocity of material of tested media layer to 1 band gap width change rate of phonon crystal specifically keeps piezoelectricity
The overall thickness of layer 4, ground electrode layer 3 and substrate layer 2 is constant, and piezoelectric layer 4 is set as aln layer, and substrate layer 2 is set as silicon substrate
Layer selects the material with sound velocity gradient as ground electrode layer 3, changes the thickness of ground electrode layer 3, detection difference is with the different velocities of sound
Influence of the thickness change for the ground electrode layer 3 that material is formed to 1 band gap width of phonon crystal, as a result as shown in table 1 below:
Table 1
As shown in Table 1, the velocity of sound difference of the sound velocity gradient of local 3 material of electrode layer and aln layer and silicon substrate layer exists
When within 3000m/s (for example, ground electrode layer 3 is selected as molybdenum layer), 1 band gap of phonon crystal caused by 3 thickness change of ground electrode layer
The variation of width can be controlled 25% or so and less；And the velocity of sound difference of ground electrode layer 3 and aln layer and silicon substrate layer
Bigger, the variation of 1 band gap width of phonon crystal caused by 3 thickness change of ground electrode layer is bigger, reaches as high as 100%.In this base
On plinth, keeps the overall thickness of piezoelectric layer 4, ground electrode layer 3 and substrate layer 2 constant, continues to test as follows:
(1) keep silicon substrate layer thickness constant, aln layer thickness is reduced to 0.2 μm by 2.2 μm, and molybdenum layer thickness is by 0.2 μ
M increases to 2.2 μm, the variation of 1 band gap width of phonon crystal is detected, as a result as shown in figure 8, with aln layer and molybdenum layer thickness
Variation, frequency locating for 1 band gap of phonon crystal is declined slightly, but band gap width remains unchanged substantially.
(2) keep aln layer thickness constant, molybdenum layer thickness increases to 2.0 μm by 0.2 μm, and silicon substrate layer thickness is by 2.0 μ
M is reduced to 0.2 μm, the variation of 1 band gap width of phonon crystal is detected, as a result as shown in figure 9, with molybdenum layer and silicon substrate layer thickness
Variation, frequency locating for 1 band gap of phonon crystal is declined slightly, but band gap width remains unchanged substantially.
(3) keep molybdenum layer thickness constant, aln layer thickness increases to 4.0 μm by 2.2 μm, and silicon substrate layer thickness is by 2.0 μ
M is reduced to 0.2 μm, detects the variation of 1 band gap width of phonon crystal, the results are shown in Figure 10, with aln layer and silicon substrate
The variation of thickness degree, frequency locating for 1 band gap of phonon crystal slightly rises, but band gap width remains unchanged substantially.
From the above results, the compound medium layer formed by aln layer, molybdenum layer and silicon substrate layer, in compound medium layer
When overall thickness remains unchanged, influence of the variation of each thickness of dielectric layers to 1 band gap of phonon crystal is smaller.
Embodiment 2
The present embodiment provides a kind of film piezo-electric sonic sensors, as shown in figure 11, including the substrate being cascading
The side of layer 2, ground electrode layer 3 and piezoelectric layer 4, the remotely electrode layer 3 of piezoelectric layer 4 is provided at least one interdigital transducer 5.Example
Such as, film piezo-electric sonic sensor is the both-end shape of the mouth as one speaks, there are two the side level of the remotely electrode layer 3 of piezoelectric layer 4 is oppositely arranged
Energy converter 5, respectively input energy converter and output transducer.Energy converter 5 be specifically interdigital transducer 5, input energy converter and
Output transducer respectively corresponds input interdigital transducer and output interdigital transducer.Phonon crystalline substance is respectively set in the two sides of energy converter 5
Body 1, that is, being pitched in input interdigital transducer back to the side of output interdigital transducer and output interdigital transducer back to input
The side of finger transducer is respectively arranged with phonon crystal 1.It is brilliant that the resonance frequency of film piezo-electric sonic sensor is located at the phonon
In the band gap of body 1.
Phonon crystal 1 is the phonon crystal 1 that embodiment 1 provides, and is formed by scatterer 12 and matrix 11, and matrix 11 is piezoelectricity
The stacked compound medium layer formed of layer 4, ground electrode layer 3 and silicon substrate layer, scatterer 12 is to extend vertically through matrix in the stacking direction
The through-hole of 11 periodic arrangement.The band gap width of phonon crystal 1 is by the material parameter of scatterer 12 and matrix 11, lattice shape
Formula, the filling rate of scatterer 12,11 thickness effect of matrix.Select to be formed the piezoelectric layer of phonon crystal 14 for aln layer, it is electric
Pole layer 3 is molybdenum layer, and substrate layer 2 is silicon substrate layer, and the complex media to be formed is laminated in aln layer, ground electrode layer 3 and silicon substrate layer
Matrix 11 of the layer as phonon crystal 1, opens up the through-hole of the periodic arrangement extended vertically through on matrix 11, forms phonon crystal
1 scatterer 12.Wherein, through-hole is cylindrical hole, and the lattice of phonon crystal 1 is square lattice.Due to the symmetry of lattice
The band gap width of phonon crystal 1 is influenced, it is wide that cylindrical hole is arranged with the band gap for being conducive to improve phonon crystal 1 with square lattice
Degree.
Optionally, groove is opened up in the side of the remotely electrode layer 3 of substrate layer 2, is formed using groove and is contacted with air
Interface, will be on the piezoelectric layer 4 of the sound wave that propagated in film piezo-electric sensor limitation on it.Groove is sensed in film piezo-electric sound wave
First area is corresponded on device, setting input interdigital transducer, output interdigital transducer and the phonon crystal 1 of two sides are located at the firstth area
In the range of domain, phonon crystal 1 is made to be located at effective resonance range of film piezo-electric sonic sensor, is formed to the efficient anti-of sound wave
It penetrates.
The resonance frequency that film piezo-electric sonic sensor is arranged is located in the band gap of phonon crystal 1, for example, film piezo-electric sound
Wave sensor is lowest-order symmetric pattern (S0) Lamb wave sensor, select a certain frequency in 1 band gap of phonon crystal as
The resonance frequency f of Lamb wave sensorS0, the wavelength X of Lamb wave sensor can be calculated in I according to the following formula, according to cloth
Glug is reflected away from, and the width of interdigital electrode is λ/4, to obtain the width of interdigital electrode；
For example, setting aln layer with a thickness of 2.2 μm, molybdenum layer forms the silicon substrate of phonon crystal 1 with a thickness of 0.2 μm
The layer silicon substrate layer of first area (that is, be in) with a thickness of 2.2 μm；The distance between neighbouring two through hole a in phonon crystal 1
It is 20 μm, through-hole radius r is 8.7 μm, can obtain the phonon crystal 1 that bandgap range is 138.1-182.6MHz.Such as Fig. 4 institute
Show, setting a is 40 μm, and through-hole radius r is 16 μm, aln layer with a thickness of 2.2 μm, molybdenum layer forms phonon with a thickness of 0.2 μm
The silicon substrate layer of crystal 1 with a thickness of 10 μm, can obtain bandgap range be 88.5-100.89MHz phonon crystal 1.Selection
Resonance frequency of the 96MHz as Lamb wave sensor within the scope of 1 band gap width of phonon crystal, is obtained by calculation Lamb wave
The wavelength X of sensor is 96 μm, and the width of interdigital electrode is 24 μm.
Further, effective plane of reflection of phonon crystal 1, the plane of reflection of phonon crystal 1 are determined using FDTD method
The distance of the neighbouring interdigital transducer 5 of distance is (n* λ)/2, and wherein n is the integer not less than 1, further determines that phonon crystalline substance with this
The distance between body 1 and neighbouring interdigital transducer 5 D, as shown in figure 12, between phonon crystal 1 and neighbouring interdigital transducer 5 away from
From D be phonon crystal 1 close to the side of interdigital transducer 5 and interdigital transducer 5 between the side of phonon crystal 1 away from
From.The distance between phonon crystal 1 and interdigital transducer 5 D are determined according to effective plane of reflection, keep sound wave anti-through phonon crystal 1
It penetrates rear incidence wave and reflection interaction forms standing wave oscillation, sound wave roundtrip between the phonon crystal 1 of two sides is formed
Mechanical resonant wave.For example, in the Lamb wave sensor of above-mentioned parameter setting, finally obtained phonon crystal 1 and interdigital transducing
The distance between device 5 D is 77.8 μm.
The course of work of above-mentioned film piezo-electric sonic sensor is as follows: between input interdigital transducer and ground electrode layer 3
Applying voltage, input interdigital transducer excitation generates electric signal, and piezoelectric layer 4 utilizes its inverse piezoelectric effect, elastic mechanical wave is generated,
Elastic mechanical wave is propagated along piezoelectric layer 4, after encountering phonon crystal 1, since its frequency of sound wave is located at the band gap of phonon crystal 1
It is interior, it is reflected by phonon crystal 1, incidence wave and reflection interaction form mechanical resonant, finally through inverse piezoelectric effect by exporting
Interdigital electrode is exported with electric signal.Sound wave can be limited between the phonon crystal 1 of two sides by the phonon crystal 1 of above-mentioned setting,
The dissipation of energy for preventing sound wave effectively reduces the energy loss during sonic transmissions, makes film piezo-electric sonic sensor
Quality factor improve, detection limit reduce.
It should be noted that phonon crystal 1 is generally kept away in the film piezo-electric sonic sensor of existing setting phonon crystal 1
The piezoelectric layer 4 for opening film piezo-electric sonic sensor, is only arranged on substrate layer 2, although above-mentioned design to a certain extent can be with
So that sound wave is formed mechanical resonant using phonon crystal 1, plays the purpose for reducing sound wave energy loss in transmission process.But
The phonon crystal 1 being arranged on substrate layer 2 is limited to acoustic wave energy reflection, especially cannot be effectively to the dissipation of energy of longitudinal wave
Effective limitation is played, improvement of the setting phonon crystal 1 to film piezo-electric sonic sensor quality factor is limited.
To solve the above problems, the phonon crystal 1 in the present embodiment is formed at piezoelectric layer 4, ground electrode layer 3 and substrate layer
Complex phonon crystal 1 on 2.The present invention passes through the study found that phonon crystal 1 is arranged on piezoelectric layer 4 is able to maintain phonon crystalline substance
The band gap properties of body 1 generate complete band gap (shown in Fig. 3).On this basis, the phonon crystal 1 in the present embodiment is set to multiple
It closes on dielectric layer, on the one hand, improve the stability of film piezo-electric sonic sensor mechanical oscillation；On the other hand, phonon is utilized
The band gap properties of crystal 1 make sound wave form mechanical resonant between the phonon crystal 1 of two sides, can further decrease film pressure
The loss of acoustic wave energy in electroacoustic wave sensor, effectively improves the quality factor of film piezo-electric sonic sensor, detection limit into
One step reduces.
Comparative example 1
This comparative example provides a kind of film piezo-electric sonic sensor, the area with film piezo-electric sonic sensor in embodiment 2
Be not only that: only by forming as the silicon substrate layer of substrate layer 2, the through-hole of phonon crystal 1 opens up the matrix 11 of phonon crystal 1 only
In in silicon substrate layer, and piezoelectric layer 4 and ground electrode layer 3 is avoided to be arranged.
Experimental example 1
Aln layer, molybdenum layer and silicon substrate are formed in the film piezo-electric sonic sensor of this experimental example testing example 2
The phonon crystal 1 of silicon substrate layer is only formed in the phonon crystal 1 of layer and the film piezo-electric sonic sensor of comparative example 1, it is right
The improvement that sonic transmissions are lost in film piezo-electric sensor, specific as follows:
1, the filling rate (i.e. area/square lattice area of cylindrical hole) of phonon crystal 1 is adjusted, film is detected
The variation of 1 band gap width of phonon crystal in piezoelectric acoustic transducer, as a result as shown in figure 13, f in Figure 131Represent phonon crystal 1
The lower edge frequency of band gap, f2Represent the top edge frequency of 1 band gap of phonon crystal.
2, the structure size of selection phonon crystal 1 corresponding under best band gap width, is correspondingly arranged shape in embodiment 2
It is identical with the phonon crystal 1 being only formed in comparative example 1 in silicon substrate layer in the phonon crystal 1 on compound medium layer
Structure size compares the transmission loss of sound wave in two kinds of film piezo-electric sensors, as a result as shown in figure 14: figure intermediate cam symbol mark
The curve of knowledge represents the transmission loss of film piezo-electric sensor in comparative example 1, and the curve of circle symbol mark represents in embodiment 2
The transmission loss of film piezo-electric sensor.As shown in Figure 14, compared with the phonon crystal 1 being only formed in silicon substrate layer, by sound
Sub- crystal 1 is set to the compound medium layer of silicon substrate layer, molybdenum layer and aln layer, enhances the reflecting effect of acoustic wave energy, sound
The transmission loss of wave reduces, and therefore, compared with the film piezo-electric sensor in comparative example 1, the film piezo-electric that embodiment 2 provides is passed
There are sensor higher quality factor and lower detection to limit.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (10)
1. a kind of film piezo-electric sonic sensor characterized by comprising substrate layer, ground electrode layer and the piezoelectricity being stacked
Layer, the piezoelectric layer are provided at least one energy converter far from the side of the ground electrode layer；Distinguish the two sides of the energy converter
It is provided with the phonon crystal at least formed on the piezoelectric layer, the resonance frequency of the film piezo-electric sonic sensor is located at described
In the band gap of phonon crystal.
2. film piezo-electric sonic sensor according to claim 1, which is characterized in that the phonon crystal includes scatterer
And matrix, described matrix are at least made of the piezoelectric layer, the scatterer is to extend vertically through the base along the stacking direction
The through-hole of the periodic arrangement of body；
Preferably, the through-hole is cylindrical hole, and the through-hole arranges to form the phonon crystal with square lattice.
3. film piezo-electric sonic sensor according to claim 1 or 2, which is characterized in that the substrate layer is far from described
The side of ground electrode layer opens up fluted, and the phonon crystal is located in first area corresponding to the groove.
4. film piezo-electric sonic sensor according to claim 1-3, which is characterized in that the phonon crystal
Matrix be the piezoelectric layer, the scatterer of the phonon crystal is by extending vertically through the logical of the periodic arrangement of the piezoelectric layer
Hole；
Preferably, the piezoelectric layer is aln layer；Preferably, the aln layer with a thickness of 2.2 μm.
5. film piezo-electric sonic sensor according to claim 1-3, which is characterized in that the phonon crystal
Matrix be made of the piezoelectric layer and the ground electrode layer, the scatterer of the phonon crystal is to extend vertically through the piezoelectric layer
With the through-hole of the periodic arrangement of the ground electrode layer；
Preferably, the piezoelectric layer is aln layer, and the ground electrode layer is molybdenum layer；Preferably, the thickness of the aln layer
Be 2.2 μm, the molybdenum layer with a thickness of 0.2 μm.
6. film piezo-electric sonic sensor according to claim 1-3, which is characterized in that the phonon crystal
Matrix be made of the piezoelectric layer, the ground electrode layer and the substrate layer, the scatterer of the phonon crystal is vertically to pass through
Wear the through-hole of the periodic arrangement of the piezoelectric layer, the ground electrode layer and the substrate layer；
Preferably, the piezoelectric layer is aln layer, and the ground electrode layer is molybdenum layer, and the substrate layer is silicon substrate layer；It is preferred that
Ground, the aln layer with a thickness of 2.2 μm, the molybdenum layer with a thickness of 0.2 μm, form the silicon lining of the phonon crystal
Bottom with a thickness of 2.2 μm.
7. film piezo-electric sonic sensor according to claim 1-6, which is characterized in that it is described at least one
Energy converter includes the horizontal input energy converter and output transducer being oppositely arranged, and the phonon crystal is distributed in the input transducing
Device back to it is described input energy converter side and the output transducer back to it is described input energy converter side.
8. film piezo-electric sonic sensor according to claim 1-7, which is characterized in that the phonon crystal
The distance of the energy converter adjacent thereto makes the reflecting surface of the phonon crystal apart from the distance (n* of the adjacent energy converter
λ)/2, n is the integer not less than 1.
9. a kind of phonon crystal, which is characterized in that the phonon crystal includes matrix and the scatterer that is formed in described matrix,
Described matrix is laminated by least two layers of dielectric layer and is formed, and the material of any one layer of dielectric layer is different from dielectric layer described in other；Institute
State the through-hole that scatterer extends vertically through the periodic arrangement of described matrix for the stacking direction along the dielectric layer.
10. phonon crystal according to claim 9, which is characterized in that the matrix of the phonon crystal is by aln layer, molybdenum
Layer and silicon substrate layer are laminated to be formed, and the through-hole extends vertically through the aln layer, the molybdenum layer and the silicon substrate layer, described
Through-hole is arranged with square-lattice；
Preferably, the aln layer with a thickness of 2.2 μm, the molybdenum layer with a thickness of 0.2 μm, the thickness of the silicon substrate layer
It is 2.2 μm.
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