CN113437947B - Film bulk acoustic resonator based on photonic crystal inhibits side energy radiation - Google Patents
Film bulk acoustic resonator based on photonic crystal inhibits side energy radiation Download PDFInfo
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- 230000005855 radiation Effects 0.000 title claims abstract description 30
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000001629 suppression Effects 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 2
- 230000005284 excitation Effects 0.000 abstract description 12
- 230000005764 inhibitory process Effects 0.000 abstract description 3
- 239000000725 suspension Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 72
- 239000000463 material Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 235000019687 Lamb Nutrition 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02039—Characteristics of piezoelectric layers, e.g. cutting angles consisting of a material from the crystal group 32, e.g. langasite, langatate, langanite
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02062—Details relating to the vibration mode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention belongs to the technical field of radio frequency micro-electro-mechanical systems, relates to a transverse excitation film bulk acoustic resonator, and particularly provides a film bulk acoustic resonator for inhibiting side energy radiation based on a photonic crystal, which is used for solving the problem of side energy leakage of the conventional transverse excitation film bulk acoustic resonator at a suspension beam tether. On the basis of a broadband piston mode resonator with a Freestanding type structure or an SMR Bragg reflection structure, phononic crystals are introduced between an electrode finger of an interdigital transducer and the broadband piston structure to serve as a side energy radiation inhibition structure, and the specific unit structure of the phononic crystals is designed in a matching way: the cross-shaped hole penetrates through the piezoelectric film or the circular metal column arranged on the piezoelectric film, so that the sound wave energy is confined in the resonant cavity of the interdigital electrode pair, namely the problem of side energy leakage is solved, the in-band quality factor is remarkably improved, and the resonator is particularly suitable for being made into a high-quality factor filter in a 5G frequency band (high-frequency large-bandwidth frequency band such as N77, N78, N79).
Description
Technical Field
The invention belongs to the technical field of radio frequency micro-electro-mechanical systems, relates to a transverse excitation film bulk acoustic resonator, and particularly relates to a high-quality-factor film bulk acoustic resonator for inhibiting side energy radiation based on a photonic crystal.
Background
In recent years, lithium niobate LiNbO cut in a rotary Y shape 3 The use of a type A1 lamb wave resonator on a (LN) piezoelectric substrate in the 5G band has attracted much attention; in this type of resonator, a solid-state mounting structure (SMR type) formed by stacking materials with different acoustic impedances on the back of the resonator or an air cavity (freesholding type) is directly used to limit the energy of the resonator, and a transverse broadband piston structure and a longitudinal broadband piston structure (etching windows) are respectively disposed between the interdigital electrode tips and the electrode bus bars and between the resonator and the peripheral protective grounding metal, so that both transverse mode suppression and energy limitation can be achieved. Nevertheless, the phenomenon of side leakage still occurs between two adjacent transverse broadband piston structures of the resonator, resulting in energy loss and product of the resonatorThe quality factor is reduced.
Disclosure of Invention
The present invention is directed to provide a film bulk acoustic resonator for suppressing lateral energy radiation based on a photonic crystal, so as to improve the quality factor of the film bulk acoustic resonator. According to the broadband piston mode resonator based on the Freesenting structure or the SMR Bragg reflection structure, the phononic crystal is introduced between the electrode finger of the interdigital transducer and the broadband piston structure to serve as a side energy radiation inhibition structure, so that the side energy radiation of the resonator can be inhibited within a wide frequency range, the quality factor of the resonator is obviously improved, and the in-band performance is improved.
In order to realize the purpose of the invention, the technical scheme adopted by the invention is as follows:
a thin film bulk acoustic resonator for suppressing lateral energy radiation based on a phononic crystal, comprising: the acoustic transducer comprises a substrate 202, a high acoustic impedance film 204, a low acoustic impedance film 203 and a piezoelectric film 201 which are sequentially stacked on the substrate, and an interdigital transducer and a grounding protection electrode 104 which are arranged on the piezoelectric film; the interdigital transducer is positioned at the center of the upper surface of the piezoelectric film 201, the grounding protection electrode 104 is arranged around the edge of the piezoelectric film 201 and surrounds the interdigital transducer, a transverse broadband piston structure 301 is arranged between an electrode finger and a bus of the interdigital transducer, and a longitudinal broadband piston structure 303 is arranged between the interdigital transducer and the grounding protection electrode 104; the interdigital transducer is characterized in that phonon crystals 302 are symmetrically arranged on two sides of each electrode finger of the interdigital transducer, and the phonon crystals are positioned between the electrode fingers and a transverse broadband piston structure 301; and the same distance is kept between the phononic crystal and the electrode finger strip, and between the phononic crystal and the transverse broadband piston structure.
A film bulk acoustic resonator for suppressing side energy radiation based on a phononic crystal, comprising: a substrate 202, a piezoelectric film 201 arranged on the substrate, an interdigital transducer arranged on the piezoelectric film, and a grounding protection electrode 104; wherein, the bottom of the substrate 202 is provided with a back cavity which is positioned right below the interdigital transducer; the interdigital transducer is positioned at the center of the upper surface of the piezoelectric film 201, the grounding protection electrode 104 is arranged around the edge of the piezoelectric film 201 and surrounds the interdigital transducer, a transverse broadband piston structure 301 is arranged between an electrode finger and a bus of the interdigital transducer, and a longitudinal broadband piston structure 303 is arranged between the interdigital transducer and the grounding protection electrode 104; the interdigital transducer is characterized in that phonon crystals 302 are symmetrically arranged on two sides of each electrode finger of the interdigital transducer, and the phonon crystals are positioned between the electrode fingers and a transverse broadband piston structure 301; and the same distance is kept between the phononic crystal and the electrode finger strip, and between the phononic crystal and the transverse broadband piston structure.
Furthermore, in the two film bulk acoustic resonators,
the phononic crystal is composed of a plurality of unit structures which are arranged in an array, and the unit structures are cross-shaped holes which penetrate through the piezoelectric film 201, the low-acoustic-impedance film 203 and the high-acoustic-impedance film 204; furthermore, the number range of the arrays of the cross-shaped phononic crystal is length (4-16) multiplied by width (2-8); and silicon dioxide is filled in the cross-shaped holes.
The phononic crystal is composed of a plurality of unit structures which are arranged in an array mode, and each unit structure is a circular metal column arranged on the upper surface of the piezoelectric film 201; furthermore, the round metal column adopts platinum, tungsten or diamond; the array number range of the round metal column phononic crystals is length (10-30) multiplied by width (3-12).
The interdigital transducer adopts any one of tungsten (W), aluminum nitride (AlN) and ruthenium (Ru).
The low acoustic impedance film adopts silicon dioxide (SiO) 2 ) Silicon nitride (Si) 3 N 4 ) Any one of silicon (Si), aluminum (Al), and zinc oxide (ZnO); the high acoustic impedance film is made of any one of tungsten, diamond, sapphire, silicon carbide and silicon nitride.
The piezoelectric film is made of lithium niobate, lithium tantalate or aluminum nitride material.
The working principle of the invention is as follows:
the transverse excitation bulk acoustic wave resonator mainly utilizes the fact that the transverse piezoelectric coefficient of a material is large, sound waves inside a solid which can only be excited by an upper electrode and a lower electrode in the past can be excited by a transverse interdigital electrode pair, the conversion from electric energy to mechanical energy and then to electric energy is realized by the piezoelectric material, and the input and the output of energy are realized by an interdigital transducer formed by the electrodes in a crossed arrangement manner; applying an electric field from the outside through an input electrode, wherein the piezoelectric material can deform according to the inverse piezoelectric effect, and the whole solid generates a bulk wave; the frequency of the fundamental wave is determined by the thickness of the piezoelectric material, and the relationship between the wavelength and the thickness of the piezoelectric material is as follows:
λ＝2h
wherein: lambda is the acoustic wavelength, and h is the thickness of the piezoelectric material;
according to common knowledge in the art, the quality factor (Q) of a resonator can be defined by:
wherein: q is a quality factor, E stored Representing the energy stored in the resonator, E dissipated Representing the energy lost in each electromechanical conversion cycle;
it can thus be seen that: the quality factor of the device can be effectively improved by reducing energy loss;
meanwhile, the phononic crystal generates an acoustic band gap in a specific frequency range by periodically arranging two materials with larger acoustic impedance difference together, the propagation of sound waves in the band gap frequency range can be inhibited, and the frequency range and the position of the band gap can be controlled by changing the geometric dimension of the phononic crystal unit; the dispersion relationship of the acoustic wave inside the phononic crystal is given by the following relationship:
ω＝v·k
where ω is the angular frequency, v is the wave velocity in the medium, and k represents the wave vector.
The invention has the beneficial effects that:
the invention provides a transverse excitation film bulk acoustic resonator adopting a phononic crystal as a side energy radiation inhibition structure, which introduces the phononic crystal between an electrode finger of an interdigital transducer and a broadband piston structure through structure analysis on the basis of a broadband piston mode resonator with a freestyling type structure or an SMR Bragg reflection structure, and obtains the specific unit structure of the phononic crystal through matching design: the transverse excitation film bulk acoustic resonator is characterized in that a cross-shaped hole penetrating through the piezoelectric film or a circular metal column arranged on the piezoelectric film is used for restraining acoustic wave energy in a resonant cavity of the interdigital electrode pair, so that the problem of side energy leakage of the transverse excitation film bulk acoustic resonator at a suspension beam tether is effectively solved, the quality factor in a resonator band is remarkably improved, and the transverse excitation film bulk acoustic resonator is particularly suitable for being made into a high-quality factor filter of a 5G frequency band (N77, N78, N79 and other high-frequency large-bandwidth frequency bands).
Drawings
Fig. 1 is a top view of the structure of a film bulk acoustic resonator for suppressing lateral energy radiation based on a phononic crystal in example 1.
Fig. 2 is a partially enlarged view of the thin film bulk acoustic resonator shown in fig. 1.
Fig. 3 is an AA' cross-sectional view of the film bulk acoustic resonator shown in fig. 2.
Fig. 4 is a BB' cross-sectional view of the film bulk acoustic resonator shown in fig. 2.
Fig. 5 is a CC' sectional view of the film bulk acoustic resonator shown in fig. 2.
Fig. 6 is a DD' cross-sectional view of the film bulk acoustic resonator shown in fig. 2.
Fig. 7 is an EE' sectional view of the film bulk acoustic resonator shown in fig. 2.
Fig. 8 is a schematic diagram of the cell and a simplified brillouin zone of the phononic crystal in example 1.
Fig. 9 is a band gap diagram of the phononic crystal in example 1.
Fig. 10 is a graph comparing the simulated admittance and conductance of the thin film bulk acoustic resonator of example 1.
Fig. 11 is a Q-value comparison diagram of the thin film bulk acoustic resonator in example 1.
Fig. 12 is a top view of the structure of the film bulk acoustic resonator for suppressing lateral energy radiation based on the phonon crystal in example 2.
Fig. 13 is a partially enlarged view of the thin film bulk acoustic resonator shown in fig. 12.
Fig. 14 is an AA' sectional view of the thin film bulk acoustic resonator shown in fig. 13.
Fig. 15 is a schematic cell diagram and a simplified brillouin zone diagram of a phononic crystal in example 2.
Fig. 16 is a band gap diagram of the phononic crystal in example 2.
Fig. 17 is a graph comparing the simulated admittance and conductance of the thin film bulk acoustic resonator of example 2.
Fig. 18 is a Q-value comparison chart of the film bulk acoustic resonator in example 2.
Fig. 19 is a structural sectional view of a thin film bulk acoustic resonator suppressing lateral energy radiation based on a phononic crystal in embodiment 3.
Fig. 20 is a structural sectional view of a thin film bulk acoustic resonator suppressing side energy radiation based on a phononic crystal in embodiment 4.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Example 1
The embodiment provides a transverse excitation film bulk acoustic resonator, which is characterized in that on the basis of an SMR Bragg reflection structure, a phononic crystal is adopted as a side energy radiation suppression structure to obtain a high-quality-factor resonator, and the working frequency of the resonator is 3.6GHz to 4.4GHz; as shown in fig. 1 to 7, the specific structure includes: the acoustic transducer comprises a substrate 202, a high acoustic impedance film 204, a low acoustic impedance film 203 and a piezoelectric film 201 which are sequentially stacked on the substrate, and an interdigital transducer and a grounding protection electrode 104 which are arranged on the piezoelectric film;
the interdigital transducer is positioned at the center of the upper surface of the piezoelectric film 201, is formed by cross arrangement of an input electrode 101 and an output electrode 103, and is used for realizing the input and output of electric signals in the electromechanical conversion process of the piezoelectric film 201, wherein the input electrode 101 can convert electric energy into sound waves to form resonance based on the inverse piezoelectric effect, and the output electrode 103 can convert the generated sound wave signals into electric signals to be output based on the positive piezoelectric effect; the input electrode 101 and the output electrode 103 are respectively composed of a bus and an electrode finger 102 vertically connected to the bus; the grounding protection electrode 104 is arranged around the edge of the piezoelectric film 201 and surrounds the interdigital transducer;
a transverse broadband piston structure 301 is arranged between an electrode finger and a bus (GAP area) of the interdigital transducer, the transverse broadband piston structure and the bus keep the same distance, and a longitudinal broadband piston structure 303 is arranged between the interdigital transducer and the grounding protection electrode 104; the transverse broadband piston structure 301 and the longitudinal broadband piston structure 303 are rectangular grooves penetrating through the piezoelectric film 201, the low-acoustic-impedance film 203 and the high-acoustic-impedance film 204;
More specifically, in this embodiment, the photonic crystal is formed by a plurality of unit structures arranged in an array, the unit structures are shown in fig. 8, specifically, cross-shaped holes penetrating through the piezoelectric film 201, the low acoustic impedance film 203, and the high acoustic impedance film 204, the array size is 4 × 2, the unit size is a1 equal to 0.5um, and hLN is equal to 502nm; the bandgap diagram of the phononic crystal is shown in fig. 9, and it can be seen that the phononic crystal has two complete bandgaps, a first bandgap frequency ranging from 1.868GHz to 3.225GHz, and a second bandgap frequency ranging from 3.428GHz to 4.618GHz, and in any case, the incidence angle can reach 90 °.
The low-acoustic-impedance film 203 is made of silicon dioxide, the high-acoustic-impedance film 204 is made of tungsten, and a four-layer alternating structure is adopted, namely the high-acoustic-impedance film, the low-acoustic-impedance film, the high-acoustic-impedance film and the low-acoustic-impedance film are sequentially arranged from bottom to top for four times; the substrate 202 is made of high-resistance silicon with good stability.
In the structure, the phononic crystal is used as a side energy radiation suppression structure, a simulation admittance and conductance comparison graph of the transverse excitation film bulk acoustic resonator is finally obtained and is shown in figure 10, and a Q value comparison graph is shown in figure 11.
Example 2
The embodiment provides a transverse excitation film bulk acoustic resonator, which is characterized in that on the basis of an SMR Bragg reflection structure, a phononic crystal is used as a side energy radiation suppression structure to obtain a high-quality-factor resonator, wherein the working frequency of the resonator is 3.6GHz to 4.4GHz; the specific structure is shown in fig. 12 to 14, and the only difference from embodiment 1 is that:
the phononic crystal is composed of a plurality of unit structures which are arranged in an array, the unit structures are shown in fig. 15, specifically, the unit structures are round metal columns which are arranged on the upper surface of a piezoelectric film 201, the round metal columns are made of platinum, the array size is 10 multiplied by 3, the unit sizes are that a2 is equal to 0.3um, d is equal to 0.25um, hPT is 0.23um, and hLN is equal to 502nm; the band gap diagram of the phononic crystal is shown in fig. 16, and it can be seen from the figure that the phononic crystal has a local band gap, the band gap frequency ranges from 2.906GHz to 4.637GHz, and when the wave number in the x direction exceeds 2 pi/a 2, the incidence angle range can reach 90 degrees.
In the structure, the phonon crystal is used as a side energy radiation suppression structure, a simulation admittance and conductance comparison graph of the transverse excitation film bulk acoustic resonator is finally obtained and is shown in fig. 17, and a Q value comparison graph is shown in fig. 18.
Example 3
The present embodiment provides a transverse-excitation film bulk acoustic resonator, which obtains a high-quality-factor resonator by using a phononic crystal as a side energy radiation suppression structure on the basis of a freestyling type structure, and the structure of the resonator is as shown in fig. 19, and specifically includes: a substrate 202, a piezoelectric film 201 arranged on the substrate, an interdigital transducer arranged on the piezoelectric film, and a grounding protection electrode 104;
the bottom of the substrate 202 is provided with a back cavity which is positioned right below the interdigital transducer;
the interdigital transducer is positioned at the center of the upper surface of the piezoelectric film 201, is formed by cross arrangement of an input electrode 101 and an output electrode 103, and is used for realizing the input and output of electric signals in the electromechanical conversion process of the piezoelectric film 201, wherein the input electrode 101 can convert electric energy into sound waves to form resonance based on the inverse piezoelectric effect, and the output electrode 103 can convert the generated sound wave signals into electric signals to be output based on the positive piezoelectric effect; the input electrode 101 and the output electrode 103 are respectively composed of a bus and an electrode finger 102 vertically connected to the bus; the grounding protection electrode 104 is arranged around the edge of the piezoelectric film 201 and surrounds the interdigital transducer;
a transverse broadband piston structure 301 is arranged between an electrode finger and a bus (GAP region) of the interdigital transducer, the transverse broadband piston structure and the bus keep the same distance, and a longitudinal broadband piston structure 303 is arranged between the interdigital transducer and the grounding protection electrode 104; the transverse broadband piston structure 301 and the longitudinal broadband piston structure 303 are both rectangular grooves penetrating through the piezoelectric film 201;
the phononic crystal is composed of a plurality of unit structures which are arranged in an array mode, and specifically is a cross-shaped hole which penetrates through the piezoelectric film 201.
Example 4
This embodiment provides a laterally excited film bulk acoustic resonator, which uses a phononic crystal as a lateral energy radiation suppression structure on the basis of a freesholding type structure to obtain a high-q resonator, and the structure of the resonator is shown in fig. 20, which is unique from embodiment 3 in that:
the photonic crystal is composed of a plurality of unit structures arranged in an array, specifically, a circular metal column arranged on the upper surface of the piezoelectric film 201, and the circular metal column is made of platinum.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (9)
1. A film bulk acoustic resonator for suppressing side energy radiation based on a phononic crystal, comprising: the acoustic transducer comprises a substrate (202), a high acoustic impedance film (204), a low acoustic impedance film (203) and a piezoelectric film (201) which are sequentially stacked on the substrate, and an interdigital transducer and a grounding protection electrode (104) which are arranged on the piezoelectric film; the interdigital transducer is positioned at the center of the upper surface of the piezoelectric film (201), the grounding protection electrode (104) is arranged around the edge of the piezoelectric film (201) and surrounds the interdigital transducer, a transverse broadband piston structure (301) is arranged between an electrode finger and a bus of the interdigital transducer, and a longitudinal broadband piston structure (303) is arranged between the interdigital transducer and the grounding protection electrode (104); the interdigital transducer is characterized in that phonon crystals (302) are symmetrically arranged on two sides of each electrode finger of the interdigital transducer, and the phonon crystals are positioned between the electrode fingers and a transverse broadband piston structure (301); and the same distance is kept between the phonon crystal and the electrode finger strip, and between the phonon crystal and the transverse broadband piston structure.
2. The film bulk acoustic resonator based on the phononic crystal to suppress lateral energy radiation as claimed in claim 1, wherein the phononic crystal is composed of a plurality of unit structures arranged in an array, and the unit structures are cross-shaped holes penetrating through the piezoelectric film (201), the low acoustic impedance film (203) and the high acoustic impedance film (204).
3. A film bulk acoustic resonator for suppressing side energy radiation based on a phononic crystal, comprising: the device comprises a substrate (202), a piezoelectric film (201) arranged on the substrate, an interdigital transducer and a grounding protection electrode (104) arranged on the piezoelectric film; wherein, the bottom of the substrate (202) is provided with a back cavity which is positioned right below the interdigital transducer; the interdigital transducer is positioned at the center of the upper surface of the piezoelectric film (201), the grounding protection electrode (104) is arranged around the edge of the piezoelectric film (201) and surrounds the interdigital transducer, a transverse broadband piston structure (301) is arranged between an electrode finger and a bus of the interdigital transducer, and a longitudinal broadband piston structure (303) is arranged between the interdigital transducer and the grounding protection electrode (104); the interdigital transducer is characterized in that phonon crystals (302) are symmetrically arranged on two sides of each electrode finger of the interdigital transducer, and the phonon crystals are positioned between the electrode fingers and a transverse broadband piston structure (301); and the same distance is kept between the phononic crystal and the electrode finger strip, and between the phononic crystal and the transverse broadband piston structure.
4. The film bulk acoustic resonator based on a phononic crystal for suppressing lateral energy radiation as claimed in claim 3, characterized in that the phononic crystal is composed of a plurality of unit structures arranged in an array, the unit structures being cross-shaped holes penetrating through the piezoelectric film (201).
5. The film bulk acoustic resonator based on the photonic crystal suppression side energy radiation as claimed in claim 2 or 4, characterized in that the number range of the array of the photonic crystal is 4 to 16 times long and 2 to 8 times wide.
6. The film bulk acoustic resonator based on phononic crystal suppression of lateral energy radiation as claimed in claim 2 or 4 wherein the cross-shaped holes are filled with silicon dioxide.
7. The film bulk acoustic resonator based on the phononic crystal for suppressing the lateral energy radiation as recited in claim 1 or 3, wherein the phononic crystal is composed of a plurality of unit structures arranged in an array, and the unit structures are circular metal columns arranged on the upper surface of the piezoelectric film (201).
8. The film bulk acoustic resonator based on phononic crystal suppression of lateral energy radiation as claimed in claim 7 wherein said circular metal posts are platinum, tungsten or diamond.
9. The film bulk acoustic resonator based on the photonic crystal for inhibiting side energy radiation is characterized in that the number range of arrays of the photonic crystal is 10 to 30 times of length and 3 to 12 times of width.
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| WO2023070457A1 (en) * | 2021-10-28 | 2023-05-04 | 华为技术有限公司 | Bulk acoustic wave resonator and filter |
| CN114337582B (en) * | 2021-12-03 | 2024-06-11 | 中国科学院上海微系统与信息技术研究所 | Surface acoustic wave resonator |
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