CN112953454B - High-frequency low-loss surface acoustic wave resonator and preparation method thereof - Google Patents
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Abstract
The invention belongs to the field of design and preparation of single crystal thin film devices, and particularly relates to a high-frequency low-loss surface acoustic wave resonator and a preparation method thereof. According to the invention, a special tangential film piezoelectric material is adopted to excite a high-sound-speed surface acoustic wave with a specific mode, so that the high electromechanical coupling coefficient is realized, and the resonant frequency is improved; and the double-deck acoustic reflection structure of cooperation just effectually suppresses the leakage of high acoustic surface acoustic wave to the volume direction, restricts the energy of surface acoustic wave at piezoelectric film, has promoted device Q value. Compared with the mode of inhibiting energy leakage of the multilayer Bragg reflection layer, the invention reduces the number of the reflection layer, not only ensures the reflection layer to have better quality, but also avoids the adverse effect on the resonator caused by the quality difference of the layer-by-layer grown film, and simultaneously reduces the preparation material and/or process cost.
Description
Technical Field
The invention belongs to the field of design and preparation of single crystal thin film devices, and particularly relates to a high-frequency low-loss surface acoustic wave resonator and a preparation method thereof.
Background
The surface acoustic wave resonator has the advantages of reliable performance, good consistency, high design flexibility, small input and output impedance errors and the like, and is widely applied to the field of wireless communication. The traditional surface acoustic wave resonator is a simple bulk structure by preparing interdigital electrodes on a piezoelectric material and exciting the surface acoustic wave by utilizing the piezoelectric effect of the piezoelectric material. The resonant frequency is proportional to the excited surface acoustic wave speed and inversely proportional to the interdigital electrode width. The acoustic wave energy of the traditional acoustic wave device is easy to leak towards the body direction due to the limited structure, so that the quality factor (Q value) of the device is low, and meanwhile, the resonant frequency of the resonator is low due to the low wave speed of the acoustic wave on the bulk material. To obtain a high-frequency high-Q resonator, it is necessary to increase the surface acoustic wave velocity while limiting the leakage of resonance energy.
Some existing high-frequency SAW resonators mainly include the following: 1. the SAW device of the piezoelectric film is prepared on a high-sound-velocity substrate such as diamond, the high-sound-velocity high-frequency can be realized, but the electromechanical coupling coefficient is only about 3% generally, and the piezoelectric film is prepared more complexly; 2. the high frequency of the cavity type SAW device prepared by utilizing the Lamb wave of the A1 mode is realized through the high acoustic velocity, but the film is prepared by adopting a sputtering method, the cost is higher, the structural stability is lower, the A1 mode acoustic velocity is unstable, and the large-amplitude fluctuation exists along with the thickness of the piezoelectric layer; 3. the Bragg reflection layer is utilized to prepare the SAW device by imitating the preparation method of the bulk acoustic wave resonator reflection layer, but the multilayer structure increases the preparation cost of the SAW device, and the flatness of the film has great influence on the performance of the device, thereby putting higher requirements on large-scale production.
Disclosure of Invention
Aiming at the problems or the defects, the invention provides the high-frequency low-loss surface acoustic wave resonator and the preparation method thereof, aiming at solving the technical problems of high preparation cost, lower electromechanical coupling coefficient and the like when the high-frequency surface acoustic wave resonator is prepared in the prior art, and the surface acoustic wave resonator has high frequency, high Q, large electromechanical coupling coefficient, lower preparation cost and stable structure.
A high-frequency low-loss surface acoustic wave resonator sequentially comprises an interdigital electrode, a piezoelectric film, a reflecting layer, a bonding layer and a substrate from top to bottom; or, the interdigital electrode, the piezoelectric film, the bonding layer, the reflecting layer and the substrate are arranged from top to bottom in sequence.
The piezoelectric film is formed by cutting single crystal lithium niobate by X at 0-40 deg. and Y at 150-180 deg. to excite S 0 A modal Lamb wave; cutting the single crystal lithium niobate Y by 0-30 degree, 40-50 degree, 130-140 degree, 150-180 degree X transmission to excite S 0 Modal Lamb wave, SH 0 Waves or LLSAW; z-cutting the single crystal lithium niobate to excite S at 0-10 deg., 50-70 deg., 110-130 deg., 170-180 deg. X 0 Mold, A 1 A modal Lamb wave; or single crystal lithium tantalate X-cut 20-40Y-pass to excite S 0 Modal Lamb waves.
Further, the thickness of the piezoelectric film is 50-5000nm.
Furthermore, the interdigital electrode is made of AI, au, mo, pt or W, the thickness of the interdigital electrode is 5% -10% lambda, and lambda is the interdigital period.
Furthermore, the thickness of the low acoustic resistance anti-reflection layer and the high acoustic resistance anti-reflection layer is related to the designed interdigital period, the thickness interval is 0.1-0.5 lambda, and lambda is the interdigital period.
Further, the substrate is Si, silicon on insulator S0I, glass, lithium niobate LN, or lithium tantalate LT.
Furthermore, the low-acoustic-resistance anti-reflection layer is made of Al, ti and Si0 2 Or BCB (benzocyclobutene); the high acoustic resistance anti-reflection layer is made of Mo, au, nb, ni, pt, ta, W, ir, znO and HfO 2 、Ti0 2 、Ta 2 0 5 Or WO 3 。
The preparation method of the high-frequency low-loss surface acoustic wave resonator comprises the following steps:
step 1, taking a piezoelectric material subjected to ion implantation, sequentially growing high and low acoustic resistance anti-reflection layers below an implantation surface of the piezoelectric material, and bonding a substrate and one side of the piezoelectric material with the reflection layer;
or, taking the piezoelectric material subjected to ion implantation and the substrate on which the high and low acoustic resistance anti-reflection layers are grown in sequence, and bonding one side of the substrate on which the reflection layer is grown with one side of an ion implantation surface of the piezoelectric material;
or, taking the piezoelectric material subjected to ion implantation to grow a low-acoustic-resistance anti-reflection layer below the implantation surface of the piezoelectric material, taking the substrate to grow a high-acoustic-resistance anti-reflection layer above the substrate, and then bonding one side of the piezoelectric material with the reflection layer with one side of the substrate with the reflection layer;
and 2, carrying out heat treatment on the bonded product obtained in the step 1 to peel off the film of the piezoelectric material, and growing an interdigital electrode on the peeled side of the piezoelectric material to obtain the piezoelectric material.
Further, the bonding in step 1 is polymer bonding or hydrophilic bonding.
Further, the polymer bonding is carried out by coating an organic insulating material on the bonding side of the substrate and/or the piezoelectric material; the organic insulating material is benzocyclobutene and/or polyimide; the total thickness of the bonding layer is 50nm-4000nm.
Further, the hydrophilic bonding is growth bonding matter bonding on the bonding side of the substrate and/or the piezoelectric material; wherein the bonding material is silicon oxide, silicon nitride, aluminum oxide and/or aluminum nitride; the total thickness of the bonding layer is 50nm-4000nm.
Further, the step 2 is to heat the bonded product obtained in the step 1 to 150-350 ℃, and anneal for 20-120 min to obtain the stripping film.
Compared with the prior art, the invention has the advantages and beneficial effects that:
1. according to the high-frequency low-loss surface acoustic wave resonator, the special tangential thin-film piezoelectric material is adopted to excite the high-sound-speed surface acoustic wave with a specific mode, so that the high electromechanical coupling coefficient is realized, and the resonance frequency is improved. By adopting the acoustic reflection structure, leakage of high-sound-velocity surface acoustic waves to the body direction is inhibited, and the energy of the surface acoustic waves is limited in the piezoelectric film, so that the Q value of the device is improved.
2. According to the preparation method of the high-frequency low-loss surface acoustic wave resonator, the high-quality piezoelectric film is prepared by using a wafer bonding transfer technology, and the resonator with high structural strength and excellent performance can be prepared by combining a solid reflecting layer structure. The bonding layer can be arranged between the piezoelectric layer and the reflecting layer and also between the reflecting layer and the substrate, so that the bonding mode has great flexibility, the requirements of different preparation conditions are met, and the bonding success rate is improved. Moreover, the prepared high-frequency low-loss surface acoustic wave resonator meets the requirement of broadband filtering on the premise of meeting high-frequency and high electromechanical coupling coefficients, is not easy to generate harmonic waves, and solves the technical problems that a piezoelectric film prepared by an electron beam deposition mode is difficult to ensure the lattice orientation of the film, the film quality is not high, multiple harmonic waves are generated by a device, the influence on the resonant frequency is large, and the broadband filtering is difficult to realize.
3. The high-frequency low-loss surface acoustic wave resonator only needs to grow two layers of a low-acoustic-resistance anti-reflection layer and a high-acoustic-resistance anti-reflection layer. Compared with the SAW resonator with a plurality of Bragg reflection layers, when a plurality of layers of materials are grown, the roughness of the uppermost layer film is gradually increased along with the increase of the number of the layers, the quality of the film is gradually poor, and the quality of the reflection layer closest to the piezoelectric material has the greatest influence on the sound wave reflection effect of the solid reflection layer. On the premise of effectively limiting the leakage of resonance energy in the direction of the body, the invention reduces the number of reflecting layers, ensures that the reflecting layers have better quality, avoids the adverse effect on the resonator caused by the quality difference of the layer-by-layer grown films, and simultaneously reduces the preparation material and/or process cost.
Drawings
FIG. 1 is a schematic view of the present invention.
FIG. 2 is a schematic diagram of the preparation process of example 1.
Fig. 3 is a schematic structural view of comparative example 1.
FIG. 4 is a graph showing the strain displacement at the center frequency point in example 1.
Fig. 5 is a graph showing the strain displacement at the center frequency point in comparative example 1.
Reference numerals are as follows: 1-interdigital electrode, 2-piezoelectric film, 3-low acoustic resistance anti-reflection layer, 4-high acoustic resistance anti-reflection layer, 5-bonding layer and 6-substrate.
Detailed Description
The technical scheme of the invention is clearly and completely described below by combining the embodiment and the attached drawings; it is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the examples of the present invention do not specify specific conditions, and the examples are performed according to conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available. The implementation of the technical scheme and the realization of the technical effect are not influenced by the raw materials of different manufacturers and models.
Preferably, the ion-implanted piezoelectric material is obtained by the following method; taking a piezoelectric material, and carrying out ion implantation on the piezoelectric material, wherein the implanted ions are one or more of H ions, he ions, B ions and As ions; the energy of the implanted ions is 100KeV-1000KeV; the injection dosage is 2-8 × 10 16 /cm 2 (ii) a The ion beam current is 0.1-10um/cm -2 (ii) a The implantation depth is 0.3-8um.
Example 1
The preparation method of the high-frequency low-loss surface acoustic wave resonator of the embodiment, as shown in fig. 2, includes the following steps:
step 1, taking the piezoelectric material subjected to ion implantation, growing a reflecting layer below an implantation surface of the piezoelectric material, taking a substrate, and bonding the substrate and one side of the piezoelectric material, which is provided with the reflecting layer.
The piezoelectric material is Y-cut Z-transmission monocrystal lithium niobate, and H ions are implanted into the piezoelectric material, the energy of the implanted ions is 100KeV, and the implantation dose is 2 x 10 16 /cm 2 The ion beam current is 8um/cm -2 And the implantation depth is 4um, and the ion implanted piezoelectric material is obtained.
And growing a low-acoustic-resistance anti-reflection layer below the injection surface of the ion-injected piezoelectric material, and then growing a high-acoustic-resistance anti-reflection layer on the low-acoustic-resistance anti-reflection layer, wherein the total thickness of the grown reflection layer is 800nm, the low-acoustic-resistance anti-reflection layer is made of Al, and the high-acoustic-resistance anti-reflection layer is made of Mo.
Then, a substrate Si is taken out, the substrate and one side of the piezoelectric material with the reflection layer are bonded, the bonding in the embodiment is polymer bonding, and bonding matter bonding is coated on the bonding side of the substrate and the piezoelectric material, and the bonding matter is benzocyclobutene BCB.
Prebonding pressure of 4X 10 for bonding 5 pa, the pressure maintaining time is 30min; and then, slowly raising the temperature to 200 ℃, keeping the temperature at 200 ℃, keeping the temperature for 2 hours, completely curing the benzocyclobutene, and finishing bonding to obtain a bonded product.
And 2, carrying out heat treatment on the bonded product obtained in the step 1 to peel off the film of the piezoelectric material, and growing an interdigital electrode on the peeled side of the piezoelectric material to obtain the piezoelectric material.
And (3) heat treatment: and (4) annealing at 350 ℃ for 2h to enable the piezoelectric material to generate cleavage along the damaged layer generated by the implanted ions, so as to obtain the single-crystal piezoelectric thin film material, namely the piezoelectric thin film layer, as shown in (4) in figure 1.
Finally, an interdigital electrode is grown on the peeling side of the piezoelectric material, wherein the electrode material of the interdigital electrode grown in the embodiment is A1, and the thickness is 160nm, that is, as shown in (5) in fig. 1.
Comparative example 1
The method for manufacturing the surface acoustic wave resonator of the present comparative example, as shown in fig. 3, includes the steps of:
step 1, taking the Y-cut Z-transmitted monocrystal lithium niobate with polished surface as a piezoelectric material, and growing an interdigital electrode on the polished surface.
Examples of Effect tests
In order to verify the technical effects of the high-frequency low-loss surface acoustic wave resonator, the high-frequency low-loss surface acoustic wave resonators prepared by the methods in the embodiment 1 and the comparative example 1 are subjected to a comparative detection test according to the following steps:
1. the resonators prepared in example 1 and comparative example 1 were used to test the S parameters of the resonators using a probe station and a vector network analyzer to obtain S11.
2. And (3) introducing S11 of each spectrum resonator into ADS simulation software, simulating by using the ADS simulation software to obtain three device input impedances Zin, and reading the series resonance frequency fs and the parallel resonance frequency fp of each resonator from the impedance curve.
3. The Q value of the resonator is calculated as follows:
4. calculating the electromechanical coupling coefficient k according to the following formula t 2 ：
Through the above experiments, experimental data were obtained as follows
| Group of | fs | fp | Q | K t 2 |
| Example 1 | 2335 | 2434 | 2176 | 10.24％ |
| Comparative example 1 | 1487 | 1552 | 647 | 4.3％ |
Fig. 4 and 5 are displacement diagrams of example 1 and a comparative example. The device thickness is shown on the abscissa and it can be seen in fig. 4 that at points outside the thickness of the piezoelectric layer, the displacement is lower and the vibration is smaller, indicating that the energy is confined to the piezoelectric layer. As can be seen in fig. 5, there is still a large displacement, large vibration and large energy leakage at points outside the thickness of the piezoelectric layer.
In conclusion, the invention adopts the special tangential film piezoelectric material to excite the high-sound-speed surface acoustic wave with a specific mode, thereby realizing high electromechanical coupling coefficient and simultaneously improving the resonant frequency; and the double-deck acoustic reflection structure of cooperation just effectually suppresses the leakage of high acoustic surface acoustic wave to the volume direction, restricts the energy of surface acoustic wave at piezoelectric film, has promoted device Q value. Compared with the mode of inhibiting energy leakage of the multilayer Bragg reflection layer, the invention reduces the number of the reflection layer, not only ensures the reflection layer to have better quality, but also avoids the adverse effect on the resonator caused by the quality difference of the layer-by-layer grown film, and simultaneously reduces the preparation material and/or process cost.
The results show that the surface acoustic wave resonator designed and prepared by the invention has higher frequency, Q value and electromechanical coupling coefficient and excellent performance. It will be appreciated by those skilled in the art that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed above are therefore to be considered in all respects as illustrative and not restrictive. All changes which come within the scope of the invention or range of equivalents are intended to be embraced therein.
Claims (10)
1. A high-frequency low-loss surface acoustic wave resonator is characterized in that: the piezoelectric film-type solar cell comprises an interdigital electrode, a piezoelectric film, a reflecting layer, a bonding layer and a substrate from top to bottom in sequence; or, the interdigital electrode, the piezoelectric film, the bonding layer, the reflecting layer and the substrate are sequentially arranged from top to bottom;
the piezoelectric film is formed by cutting single crystal lithium niobate X by 0-40 degrees and Y-transfer by 150-180 degrees to excite S 0 A modal Lamb wave; cutting the single crystal lithium niobate Y by 0-30 degree, 40-50 degree, 130-140 degree, 150-180 degree X transmission to excite S 0 Modal Lamb wave, SH 0 Waves or LLSAW; z-cutting the single crystal lithium niobate at 0-10, 50-70, 110-130, 170-180X to excite S 0 Mold, A 1 A modal Lamb wave; or single crystal lithium tantalate X-cut 20-40Y-pass to excite S 0 Modal Lamb waves;
the reflection layer comprises a low sound resistance anti-reflection layer and a high sound resistance anti-reflection layer, the thickness of the low sound resistance anti-reflection layer and the thickness of the high sound resistance anti-reflection layer are 0.1-0.5 lambda, and lambda is an interdigital period.
2. A high frequency, low loss surface acoustic wave resonator as set forth in claim 1, wherein: the thickness of the piezoelectric film is 50-5000nm.
3. A high frequency, low loss surface acoustic wave resonator as set forth in claim 1, wherein: the interdigital electrode is made of AI, au, mo, pt or W, the thickness of the interdigital electrode is 5% -10% lambda, and the lambda is the interdigital period.
4. A high frequency, low loss surface acoustic wave resonator as set forth in claim 1, wherein: the substrate is Si, silicon on insulator S0I, glass, lithium niobate LN or lithium tantalate LT.
5. A high frequency, low loss surface acoustic wave resonator as set forth in claim 1, wherein: the low-acoustic-resistance anti-reflection layer is made of Al, ti and Si0 2 Or BCB benzocyclobutene; the high-acoustic-resistance anti-reflection layer is made of Mo, au, nb, ni, pt, ta, W, ir, znO and HfO 2 、Ti0 2 、Ta 2 0 5 Or WO 3 。
6. The method of manufacturing a high frequency, low loss surface acoustic wave resonator as claimed in claim 1, comprising the steps of:
step 1, taking a piezoelectric material subjected to ion implantation, sequentially growing high and low acoustic resistance anti-reflection layers below an implantation surface of the piezoelectric material, and bonding a substrate and one side of the piezoelectric material with the reflection layer;
or, taking the piezoelectric material subjected to ion implantation and the substrate on which the high and low acoustic resistance anti-reflection layers are sequentially grown, and bonding one side of the substrate on which the reflection layer is grown with one side of the ion implantation surface of the piezoelectric material;
or, taking the piezoelectric material subjected to ion implantation to grow a low-acoustic-resistance anti-reflection layer below the implantation surface of the piezoelectric material, taking the substrate to grow a high-acoustic-resistance anti-reflection layer above the substrate, and then bonding one side of the piezoelectric material with the reflection layer with one side of the substrate with the reflection layer;
and 2, carrying out heat treatment on the bonded product obtained in the step 1 to peel off the film of the piezoelectric material, and growing an interdigital electrode on the peeled side of the piezoelectric material to obtain the piezoelectric material.
7. The method of manufacturing a high frequency, low loss surface acoustic wave resonator as claimed in claim 6, wherein: and the bonding in the step 1 is polymer bonding or hydrophilic bonding.
8. The method of manufacturing a high frequency, low loss surface acoustic wave resonator as claimed in claim 7, wherein: the polymer bonding is carried out by coating an organic insulating material on the bonding side of the substrate and/or the piezoelectric material; the organic insulating material is benzocyclobutene and/or polyimide; the total thickness of the bonding layer is 50nm-4000nm.
9. The method of manufacturing a high frequency, low loss surface acoustic wave resonator as claimed in claim 7, wherein: the hydrophilic bonding is growth bonding of a bonding object on the bonding side of the substrate and/or the piezoelectric material; wherein the bonding matter is silicon oxide, silicon nitride, aluminum oxide and/or aluminum nitride; the total thickness of the bonding layer is 50nm-4000nm.
10. The method of manufacturing a high frequency, low loss surface acoustic wave resonator as claimed in claim 6, wherein: and 2, specifically, heating the bonded product obtained in the step 1 to 150-350 ℃, and annealing for 20-120 min to obtain the stripping film.
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