CN117040470A - Surface acoustic wave resonator - Google Patents
Surface acoustic wave resonator Download PDFInfo
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- CN117040470A CN117040470A CN202310907028.2A CN202310907028A CN117040470A CN 117040470 A CN117040470 A CN 117040470A CN 202310907028 A CN202310907028 A CN 202310907028A CN 117040470 A CN117040470 A CN 117040470A
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- bus bar
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- interdigital
- acoustic wave
- piezoelectric substrate
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000010410 layer Substances 0.000 claims description 70
- 239000000463 material Substances 0.000 claims description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 4
- 238000011161 development Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02842—Means for compensation or elimination of undesirable effects of reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a surface acoustic wave resonator, which belongs to the technical field of surface acoustic wave devices, and comprises a piezoelectric substrate, wherein an interdigital transducer is arranged on one side surface of the piezoelectric substrate, and comprises a first bus bar and a second bus bar which are arranged at opposite intervals; a plurality of first interdigital electrodes and a plurality of second interdigital electrodes are alternately arranged between the first bus bar and the second bus bar at intervals; at least one reflecting groove is arranged on the piezoelectric substrate and positioned on two sides of the interdigital transducer, the reflecting groove and the interdigital transducer are positioned on the same side surface of the piezoelectric substrate, and the reflecting groove extends from the first bus bar to the second bus bar. The resonator replaces the reflecting grating by the reflecting groove, so that the occupied area of the resonator is reduced, and the acoustic wave energy can be totally reflected, so that the loss is reduced.
Description
Technical Field
The invention relates to the technical field of surface acoustic wave devices, in particular to a surface acoustic wave resonator.
Background
The surface acoustic wave can be an elastic wave which propagates along the surface and has energy concentrated near the surface and is used widely in resonator, filter, sensor and other products due to the characteristics of high energy density, slow propagation speed and the like. With the development of acoustic wave device technology, the surface acoustic wave device has been developed toward miniaturization, high frequency and broadband. And with the advent of 5G, the center frequency and bandwidth of the filter was pushed to higher frequencies above 3GHz and to wider bandwidths of greater than 10%. Although the LTCC filter can support a wide band, it has a higher loss due to its larger profile, and lacks a high Q (quality factor) value and steep suppression achieved by the acoustic resonator, which is clearly not suitable for rapid development of mobile phones, whereas the high performance of the acoustic filter, such as miniaturization, low insertion loss, high Q value, is just the best choice for the mobile Radio Frequency (RF) front end. However, the conventional surface acoustic wave resonator mainly comprises a piezoelectric material layer and electrode materials arranged on the surface of the piezoelectric material layer, wherein the motor materials mainly comprise interdigital transducers and reflecting grids arranged on two sides of the interdigital transducers, and the conventional resonator still has the following defects: 1. the reflective grids are arranged on two sides of the interdigital transducer, so that the size of the resonator cannot be reduced; 2. when the sound wave reaches the edge of the reflecting grating, a part of energy except most of energy is reflected back to the interdigital transducer and penetrates into the reflecting grating, so that additional loss is generated.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: provided is a surface acoustic wave resonator which uses a reflection groove instead of a reflection grating, thereby not only reducing the occupied area of the resonator, but also reducing the loss by totally reflecting acoustic energy.
In order to solve the technical problems, the technical scheme of the invention is as follows: a surface acoustic wave resonator comprises a piezoelectric substrate, wherein an interdigital transducer is arranged on one side surface of the piezoelectric substrate, and the interdigital transducer comprises a first bus bar and a second bus bar which are arranged at opposite intervals; a plurality of first interdigital electrodes and a plurality of second interdigital electrodes are alternately arranged between the first bus bar and the second bus bar at intervals; the first interdigital electrode is led out from the first bus bar and extends to the second bus bar, the second interdigital electrode is led out from the second bus bar and extends to the first bus bar, at least one reflecting groove is arranged on two sides of the piezoelectric substrate, which are positioned on the interdigital transducer, the reflecting groove and the interdigital transducer are positioned on the same side surface of the piezoelectric substrate, and the reflecting groove extends from the first bus bar to the second bus bar.
As a preferable scheme, the groove width of the reflecting groove is defined as M, M is larger than or equal to lambda/4, wherein lambda is the period length of the interdigital transducer.
As a preferable scheme, the depth of the reflecting groove is defined as H, wherein 2λ is equal to or greater than H is equal to or greater than λ/4.
As a preferable scheme, the groove edge of the reflecting groove close to the interdigital transducer is defined as a first groove edge, and the distance between the first groove edge and the nearest first interdigital electrode or the nearest second interdigital electrode is defined as D, wherein lambda/2 is equal to or larger than D is equal to or larger than lambda/16.
As a preferred embodiment, the extension direction of the reflection recess is parallel to the extension direction of the first interdigital electrode or the second interdigital electrode.
As a preferred aspect, the length of the reflection groove is greater than or equal to the distance between the first bus bar and the second bus bar.
As a preferable mode, the cross section of the reflecting groove is rectangular or trapezoid.
As a preferable scheme, the piezoelectric substrate is of a single-layer structure or a multi-layer structure, and is a piezoelectric material layer when the piezoelectric substrate is of a single-layer structure; when the piezoelectric substrate is of a multilayer structure, the piezoelectric substrate comprises a high-resistance silicon layer, a silicon dioxide layer and a piezoelectric material layer which are sequentially stacked, and the interdigital transducer and the reflecting groove are both arranged on the piezoelectric material layer.
As a preferable scheme, the piezoelectric substrate comprises a high-resistance silicon layer, a polycrystalline silicon layer, a silicon dioxide layer and a piezoelectric material layer which are sequentially stacked, and the interdigital transducer and the reflecting groove are arranged on the piezoelectric material layer.
As a preferable scheme, the piezoelectric substrate comprises a piezoelectric material layer, the interdigital transducer and the reflecting groove are both arranged on the piezoelectric material layer, the reflecting groove is filled with a low sound velocity material, the piezoelectric material layer is covered with a temperature compensation layer, the temperature compensation layer covers the interdigital transducer, part or all of the reflecting groove, and the sound velocity ratio of the piezoelectric material layer to the low sound velocity material exceeds 1.5.
After the technical scheme is adopted, the invention has the following effects: the surface acoustic wave resonator comprises a piezoelectric substrate, wherein an interdigital transducer is arranged on one side surface of the piezoelectric substrate, and the interdigital transducer comprises a first bus bar and a second bus bar which are arranged at opposite intervals; a plurality of first interdigital electrodes and a plurality of second interdigital electrodes are alternately arranged between the first bus bar and the second bus bar at intervals; the first interdigital electrode is led out from the first bus bar and extends to the second bus bar, the second interdigital electrode is led out from the second bus bar and extends to the first bus bar, at least one reflecting groove is formed in each of two sides of the interdigital transducer on the piezoelectric substrate, the reflecting grooves and the interdigital transducer are located on the same side surface of the piezoelectric substrate, the reflecting grooves extend from the first bus bar to the second bus bar, and because the acoustic impedance of the piezoelectric substrate is higher, the inside of the reflecting grooves is air, the acoustic impedance of the air is very low, total reflection can be formed when the acoustic surface wave is transmitted to the grooves, so that the purpose of energy recovery is achieved, energy is limited in the interdigital transducer, Q value can be effectively improved, the occupied area of the reflecting grating is saved, the size can be reduced, and more possibilities are provided for device miniaturization.
The piezoelectric substrate comprises a piezoelectric material layer, the interdigital transducer and the reflecting groove are both arranged on the piezoelectric material layer, the reflecting groove is filled with a low sound velocity material, the piezoelectric material layer is covered with a temperature compensation layer, the temperature compensation layer covers the interdigital transducer and part or all of the reflecting groove, and the sound velocity ratio of the piezoelectric material layer to the low sound velocity material exceeds 1.5.
Drawings
The invention will be further described with reference to the drawings and examples.
FIG. 1 is a top view of a first embodiment of the invention;
FIG. 2 is a cross-sectional view of FIG. 1 at A-A;
FIG. 3 is a cross-sectional view of a second embodiment;
FIG. 4 is a cross-sectional view of a third embodiment;
FIG. 5 is a top view of embodiment four;
FIG. 6 is a cross-sectional view of embodiment IV at B-B;
fig. 7 is a schematic structural view of a conventional surface acoustic wave resonator in the prior art;
FIG. 8 is a graph showing the admittance curves of a surface acoustic wave resonator according to the first embodiment and the prior art;
FIG. 9 is a graph comparing the real part of the admittance curve of a surface acoustic wave resonator of the prior art with that of the first embodiment;
in the accompanying drawings: 1. a piezoelectric substrate; 2. a first bus bar; 3. a second bus bar; 4. a first interdigital electrode; 5. a second interdigital electrode; 6. a reflection groove; 7. a high-resistance silicon layer; 8. a silicon dioxide layer; 9. a polysilicon layer; 10. a temperature compensation layer; 11. a reflective grating; 12. a low acoustic speed material; 13. a layer of piezoelectric material.
Detailed Description
The present invention will be described in further detail with reference to the following examples.
As shown in fig. 7, fig. 7 is a conventional surface acoustic wave resonator at present, which includes a piezoelectric substrate 1, one side surface of the piezoelectric substrate 1 being provided with an interdigital transducer including a first bus bar 2 and a second bus bar 3 arranged at opposite intervals; a plurality of first interdigital electrodes 4 and a plurality of second interdigital electrodes 5 are alternately arranged between the first bus bar 2 and the second bus bar 3 at intervals; the first interdigital electrode 4 is led out from the first bus bar 2 and extends to the second bus bar 3, and the second interdigital electrode 5 is led out from the second bus bar 3 and extends to the first bus bar 2, wherein as can be seen from fig. 7, the first interdigital electrode 4 comprises a first long interdigital electrode and a first short interdigital electrode, and the first long interdigital electrode and the first short interdigital electrode are arranged at a staggered interval; correspondingly, the second interdigital electrode 5 also comprises a second long interdigital electrode and a second short interdigital electrode, and the second long interdigital electrode and the second short interdigital electrode are arranged at a mutual staggered interval; the first long interdigital electrode and the second short interdigital electrode are arranged in a collinear way, the first short interdigital electrode and the second long interdigital electrode are arranged in a collinear way, the two sides of the interdigital transducer are respectively provided with a reflecting grating 11, and the reflecting grating 11 can reflect sound wave energy to the interdigital transducer.
Example 1
As shown in fig. 1 and 2, a surface acoustic wave resonator includes a piezoelectric substrate 1, one side surface of the piezoelectric substrate 1 is provided with an interdigital transducer including a first bus bar 2 and a second bus bar 3 arranged at opposite intervals; a plurality of first interdigital electrodes 4 and a plurality of second interdigital electrodes 5 are alternately arranged between the first bus bar 2 and the second bus bar 3 at intervals; the first interdigital electrode 4 is led out from the first bus bar 2 and extends to the second bus bar 3, the second interdigital electrode 5 is led out from the second bus bar 3 and extends to the first bus bar 2, at least one reflecting groove 6 is arranged on two sides of the piezoelectric substrate 1, which are positioned on the interdigital transducer, the reflecting groove 6 and the interdigital transducer are positioned on the same side surface of the piezoelectric substrate 1, the reflecting groove 6 extends from the first bus bar 2 to the second bus bar 3, no metal coating exists in the reflecting groove, an air medium is arranged in the reflecting groove, and the air medium also belongs to a low sound velocity material.
In the present embodiment, the material of the first bus bar 2, the second bus bar 3, the second interdigital electrode 5, and the second interdigital electrode 5 of the interdigital transducer is at least one of Ti, al, cu, ag, ni, cr, pt, au, mo. And the piezoelectric substrate 1 is of a single-layer structure including a piezoelectric material layer 13, wherein the piezoelectric material may be lithium tantalate or lithium niobate or quartz or aluminum nitride.
In this embodiment, the extending direction of the reflecting grooves 6 is parallel to the extending direction of the first interdigital electrode 4 or the second interdigital electrode 5. In the present embodiment, the extending directions of the first interdigital electrode 4 and the second interdigital electrode 5 are perpendicular to the first bus bar 2 and the second bus bar 3, respectively, and thus the extending directions of the reflecting grooves 6 are also perpendicular to the first bus bar 2 and the second bus bar 3. Of course, the first interdigital electrode 4 and the second interdigital electrode 5 may be parallel to each other and inclined, and in this case, the extending direction of the first interdigital electrode 4 and the second interdigital electrode 5 is not perpendicular to the first bus bar 2 and the second bus bar 3, and when the reflection groove 6 is provided, the first interdigital electrode 4 and the second interdigital electrode 5 may be parallel to each other. In this embodiment, the length of the reflecting groove 6 is greater than or equal to the distance between the first bus bar 2 and the second bus bar 3. The reflective recesses 6 may be formed by an etching process.
In this embodiment, the cross-sectional shape of the reflective groove is rectangular or trapezoidal. The embodiment is preferably rectangular, the groove width of the reflecting groove 6 is defined as M, M is equal to or larger than lambda/4, wherein lambda is the period length of the interdigital transducer. Preferably, in this embodiment, the groove width m=λ/4.
The depth of the reflection groove 6 is defined as H, wherein 2λ is equal to or greater than H is equal to or greater than λ/4. Preferably, the depth h=λ of the reflection groove 6, the groove edge of the reflection groove 6 near the interdigital transducer is defined as a first groove edge, and the distance between the first groove edge and the nearest first interdigital electrode 4 or second interdigital electrode 5 is defined as D, where λ/2 is greater than or equal to D is greater than or equal to λ/16, and preferably d=λ/4 in this embodiment.
As shown in fig. 8 and 9, which are graphs comparing admittance curves obtained by simulating the prior art resonator and the resonator of the present embodiment, it can be found from the admittance curves of fig. 8 and 9 that the M1 point positive peak resonance frequency of the present embodiment is 757MHz, the M2 point positive peak resonance frequency of the conventional resonator with the reflective grating 11 is 757MHz, the M4 point anti-peak resonance frequency of the present embodiment is 785MHz, the M3 anti-peak resonance frequency of the conventional resonator is 786MHz, the M6 point bulk wave frequency of the present embodiment is 807MHz, the M5 point bulk wave frequency of the conventional resonator is 804MHz, and it can be found from fig. 8 and 9 that the Q value of the present embodiment is higher than the Q value of the conventional resonator.
Example two
As shown in fig. 3, the resonator structure in this embodiment is substantially the same as that of the first embodiment except that the structure of the reflection groove 6 is applied to a bonded wafer, wherein in the resonator in this embodiment, the piezoelectric substrate 1 includes a high-resistance silicon layer 7, a silicon dioxide layer 8, and a piezoelectric material layer 13 stacked in order, and the interdigital transducer and the reflection groove 6 are disposed on the piezoelectric material layer 13.
Example III
As shown in fig. 4, the resonator structure in this embodiment is substantially the same as that of the first embodiment except that the structure of the reflection groove 6 is applied to the POI SAW, and in the resonator in this embodiment, the piezoelectric substrate 1 is a POI substrate including a high-resistance silicon layer 7, a polysilicon layer 9, a silicon dioxide layer 8, and a piezoelectric material layer 13 stacked in this order, and the interdigital transducer and the reflection groove 6 are disposed on the piezoelectric material layer 13.
Example IV
As shown in fig. 5 and 6, the resonator of the present embodiment has a structure substantially the same as that of the first embodiment, except that the structure of the reflection groove 6 of the present invention is applied to a TC SAW, in which the piezoelectric substrate 1 includes a piezoelectric material layer 13, the interdigital transducer and the reflection groove 6 are both disposed on the piezoelectric material layer 13, the reflection groove is filled with a low sound velocity material 12, the piezoelectric material layer 13 is covered with a temperature compensation layer 10, the temperature compensation layer 10 covers the interdigital transducer, part or all of the reflection groove 6, the ratio of sound velocity of the piezoelectric material layer to sound velocity of the low sound velocity material 12 exceeds 1.5, in this embodiment, the temperature compensation layer 10 may be made of a silicon dioxide material, the sound velocity of the silicon dioxide material is much lower than that of the piezoelectric material layer 13, the ratio of sound velocity of the two materials exceeds 1.5, therefore, the low sound velocity material 12 can be directly molded in the reflection groove while the temperature compensation layer 10 is molded, the reflection coefficients of adjacent surfaces of the two material media are relatively large, and thus the reflection loss between the reflection groove and the low sound velocity material 1 inside thereof is as small as possible.
The low acoustic speed material 12 in this embodiment may be a polymer BCB (benzocyclobutene) material, where the polymer BCB may be filled in the reflective groove before the temperature compensation layer is formed, and then the upper surface of the polymer BCB is polished to make the upper surface of the polymer BCB flush with the upper surface of the piezoelectric material layer 13, and then the temperature compensation layer 10 may completely cover the interdigital transducer and the reflective groove, or may partially cover the reflective groove in the forming temperature compensation layer 10.
The above examples are merely illustrative of the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, and various modifications and adaptations of the technical solution of the present invention should and are intended to fall within the scope of the present invention as defined in the claims.
Claims (10)
1. A surface acoustic wave resonator comprises a piezoelectric substrate, wherein an interdigital transducer is arranged on one side surface of the piezoelectric substrate, and the interdigital transducer comprises a first bus bar and a second bus bar which are arranged at opposite intervals; a plurality of first interdigital electrodes and a plurality of second interdigital electrodes are alternately arranged between the first bus bar and the second bus bar at intervals; the first interdigital electrode is led out from the first bus bar and extends to the second bus bar, and the second interdigital electrode is led out from the second bus bar and extends to the first bus bar, and the device is characterized in that: at least one reflecting groove is arranged on the piezoelectric substrate and positioned on two sides of the interdigital transducer, the reflecting groove and the interdigital transducer are positioned on the same side surface of the piezoelectric substrate, and the reflecting groove extends from the first bus bar to the second bus bar.
2. A surface acoustic wave resonator as set forth in claim 1, wherein: the groove width of the reflecting groove is defined as M, M is larger than or equal to lambda/4, wherein lambda is the period length of the interdigital transducer.
3. A surface acoustic wave resonator as set forth in claim 2, characterized in that: the depth of the reflection groove is defined as H, wherein 2λ is equal to or greater than H is equal to or greater than λ/4.
4. A surface acoustic wave resonator as set forth in claim 3, characterized in that: the groove edge of the reflection groove, which is close to the interdigital transducer, is defined as a first groove edge, and the distance between the first groove edge and the nearest first interdigital electrode or second interdigital electrode is defined as D, wherein lambda/2 is larger than or equal to D is larger than or equal to lambda/16.
5. The surface acoustic wave resonator according to claim 4, wherein: the extending direction of the reflecting groove is parallel to the extending direction of the first interdigital electrode or the second interdigital electrode.
6. The surface acoustic wave resonator according to claim 5, wherein: the length of the reflection groove is greater than or equal to the spacing between the first bus bar and the second bus bar.
7. The surface acoustic wave resonator according to claim 6, wherein: the cross section of the reflecting groove is rectangular or trapezoidal.
8. A surface acoustic wave resonator as claimed in claims 1 to 7, characterized in that: the piezoelectric substrate is of a single-layer structure or a multi-layer structure, and is a piezoelectric material layer when the piezoelectric substrate is of a single-layer structure; when the piezoelectric substrate is of a multilayer structure, the piezoelectric substrate comprises a high-resistance silicon layer, a silicon dioxide layer and a piezoelectric material layer which are sequentially stacked, and the interdigital transducer and the reflecting groove are both arranged on the piezoelectric material layer.
9. A surface acoustic wave resonator as claimed in claims 1 to 7, characterized in that: the piezoelectric substrate comprises a high-resistance silicon layer, a polycrystalline silicon layer, a silicon dioxide layer and a piezoelectric material layer which are sequentially stacked, and the interdigital transducer and the reflecting groove are both arranged on the piezoelectric material layer.
10. A surface acoustic wave resonator as claimed in claims 1 to 7, characterized in that: the piezoelectric substrate comprises a piezoelectric material layer, the interdigital transducer and the reflecting groove are both arranged on the piezoelectric material layer, the reflecting groove is filled with a low sound velocity material, the piezoelectric material layer is covered with a temperature compensation layer, the temperature compensation layer covers the interdigital transducer and part or all of the reflecting groove, and the sound velocity ratio of the piezoelectric material layer to the low sound velocity material exceeds 1.5.
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| CN202310907028.2A CN117040470A (en) | 2023-07-24 | 2023-07-24 | Surface acoustic wave resonator |
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Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040080385A1 (en) * | 2002-08-29 | 2004-04-29 | Yuichi Takamine | Surface acoustic wave apparatus and communication apparatus |
| CN105245199A (en) * | 2015-10-28 | 2016-01-13 | 江苏声立传感技术有限公司 | Acoustic surface wave resonator having high Q value and one port applied to wireless temperature sensor |
| CN205017279U (en) * | 2015-10-28 | 2016-02-03 | 江苏声立传感技术有限公司 | High Q value of being applied to wireless temperature sensor is single -ended to SAW resonator |
| CN207163978U (en) * | 2017-05-09 | 2018-03-30 | 广州粤能电力科技开发有限公司 | Surface acoustic wave resonant sensor |
| CN109257027A (en) * | 2018-10-30 | 2019-01-22 | 开元通信技术（厦门）有限公司 | A kind of mixing acoustic resonator and preparation method thereof |
| CN111614342A (en) * | 2020-04-20 | 2020-09-01 | 张家港声芯电子科技有限公司 | Surface acoustic wave filter and manufacturing method thereof |
| CN112953454A (en) * | 2021-03-16 | 2021-06-11 | 电子科技大学 | High-frequency low-loss surface acoustic wave resonator and preparation method thereof |
| CN113346859A (en) * | 2021-07-07 | 2021-09-03 | 无锡中微晶园电子有限公司 | Surface acoustic wave resonator with high Q value and preparation method thereof |
| CN114244311A (en) * | 2021-12-22 | 2022-03-25 | 江苏卓胜微电子股份有限公司 | Surface acoustic wave resonator and filter |
| CN114257206A (en) * | 2022-01-18 | 2022-03-29 | 深圳新声半导体有限公司 | Surface acoustic wave resonator, filter and communication device |
| CN114553174A (en) * | 2022-02-23 | 2022-05-27 | 广东广纳芯科技有限公司 | Temperature compensation type resonator and manufacturing method thereof |
| WO2022145802A1 (en) * | 2020-12-30 | 2022-07-07 | 주식회사 와이팜 | Surface acoustic wave resonator and surface acoustic wave filter |
| WO2022204876A1 (en) * | 2021-03-29 | 2022-10-06 | 华为技术有限公司 | Resonator, filter, and electronic device |
| CN116073788A (en) * | 2023-01-18 | 2023-05-05 | 浙江星曜半导体有限公司 | Interdigital transducer and resonator |
| CN116210152A (en) * | 2020-10-27 | 2023-06-02 | 华为技术有限公司 | Resonator, manufacturing method thereof, filter and electronic equipment |
-
2023
- 2023-07-24 CN CN202310907028.2A patent/CN117040470A/en active Pending
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040080385A1 (en) * | 2002-08-29 | 2004-04-29 | Yuichi Takamine | Surface acoustic wave apparatus and communication apparatus |
| CN105245199A (en) * | 2015-10-28 | 2016-01-13 | 江苏声立传感技术有限公司 | Acoustic surface wave resonator having high Q value and one port applied to wireless temperature sensor |
| CN205017279U (en) * | 2015-10-28 | 2016-02-03 | 江苏声立传感技术有限公司 | High Q value of being applied to wireless temperature sensor is single -ended to SAW resonator |
| CN207163978U (en) * | 2017-05-09 | 2018-03-30 | 广州粤能电力科技开发有限公司 | Surface acoustic wave resonant sensor |
| CN109257027A (en) * | 2018-10-30 | 2019-01-22 | 开元通信技术（厦门）有限公司 | A kind of mixing acoustic resonator and preparation method thereof |
| US20200389146A1 (en) * | 2018-10-30 | 2020-12-10 | Epic Mems (Xiamen) Co., Ltd | Hybrid acoustic wave resonator and preparation method therefor |
| CN111614342A (en) * | 2020-04-20 | 2020-09-01 | 张家港声芯电子科技有限公司 | Surface acoustic wave filter and manufacturing method thereof |
| CN116210152A (en) * | 2020-10-27 | 2023-06-02 | 华为技术有限公司 | Resonator, manufacturing method thereof, filter and electronic equipment |
| WO2022145802A1 (en) * | 2020-12-30 | 2022-07-07 | 주식회사 와이팜 | Surface acoustic wave resonator and surface acoustic wave filter |
| CN112953454A (en) * | 2021-03-16 | 2021-06-11 | 电子科技大学 | High-frequency low-loss surface acoustic wave resonator and preparation method thereof |
| WO2022204876A1 (en) * | 2021-03-29 | 2022-10-06 | 华为技术有限公司 | Resonator, filter, and electronic device |
| CN113346859A (en) * | 2021-07-07 | 2021-09-03 | 无锡中微晶园电子有限公司 | Surface acoustic wave resonator with high Q value and preparation method thereof |
| CN114244311A (en) * | 2021-12-22 | 2022-03-25 | 江苏卓胜微电子股份有限公司 | Surface acoustic wave resonator and filter |
| CN114257206A (en) * | 2022-01-18 | 2022-03-29 | 深圳新声半导体有限公司 | Surface acoustic wave resonator, filter and communication device |
| CN114553174A (en) * | 2022-02-23 | 2022-05-27 | 广东广纳芯科技有限公司 | Temperature compensation type resonator and manufacturing method thereof |
| CN116073788A (en) * | 2023-01-18 | 2023-05-05 | 浙江星曜半导体有限公司 | Interdigital transducer and resonator |
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