CN114553174A - Temperature compensation type resonator and manufacturing method thereof - Google Patents
Temperature compensation type resonator and manufacturing method thereof Download PDFInfo
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- CN114553174A CN114553174A CN202210166563.2A CN202210166563A CN114553174A CN 114553174 A CN114553174 A CN 114553174A CN 202210166563 A CN202210166563 A CN 202210166563A CN 114553174 A CN114553174 A CN 114553174A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02653—Grooves or arrays buried in the substrate
- H03H9/02661—Grooves or arrays buried in the substrate being located inside the interdigital transducers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
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Abstract
The present invention provides a temperature compensation type resonator, comprising: a piezoelectric substrate; an interdigital electrode comprising a 1 st electrode and a 2 nd electrode configured in an interdigital structure, and both the 1 st electrode and the 2 nd electrode are formed on a piezoelectric substrate; bus bars including a 1 st bus bar and a 2 nd bus bar arranged in parallel with each other, the 1 st bus bar and the 2 nd bus bar each being formed on the piezoelectric substrate, the 1 st bus bar being connected to one end of the 1 st electrode, the 2 nd bus bar being connected to one end of the 2 nd electrode; a thickening layer formed on the interdigital electrode; and a temperature compensation layer which is made of a temperature compensation material and covers the interdigital electrodes, the bus bars and the thickening layer, wherein a groove is excavated in a gap region between the 1 st electrode and the 2 nd bus bar of the piezoelectric substrate, and a groove is also excavated in a gap region between the 2 nd electrode and the 1 st bus bar of the piezoelectric substrate, and the groove is filled with the temperature compensation material.
Description
Technical Field
The present invention relates to a temperature compensation resonator and a method for manufacturing the same, and more particularly, to a temperature compensation resonator applied to a radio frequency front end filter and a method for manufacturing the same.
Background
For a surface acoustic wave filter (SAW), the working frequency of the SAW filter is very sensitive to temperature, the SAW filter has the characteristic that the frequency drifts along with the working temperature, and the specified working temperature range of equipment is large (generally-20 ℃ to 85 ℃), so that the common SAW is difficult to meet the requirements of the radio frequency terminal of the 5G era with increasingly crowded frequency bands on the filter. In order to improve the temperature stability of the surface acoustic wave device and reduce the influence of temperature on the working frequency, the demand of the radio frequency front end of the mobile phone on TC-SAW (temperature compensation type surface acoustic wave filter) is increasing day by day.
For TC-SAW, lithium niobate (LiNbO) is commonly used3) Forming interdigital electrode on the piezoelectric substrate, and covering a layer of temperature compensation material (such as SiO) with positive temperature coefficient on the interdigital electrode2) Thereby suppressing frequency drift due to temperature change. However, the introduction of positive temperature coefficient materials can produce strong stray responses. For the TC-SAW with high bandwidth, it is important to suppress the in-band ripple and improve the performance of the device.
Disclosure of Invention
Technical problem to be solved by the invention
LiNbO due to low corner cut3Has higher electromechanical coupling coefficient, so for TC-SAW with high bandwidth, LiNbO with low tangential angle is generally adopted3A piezoelectric substrate.
In this case, the finger weighting method commonly used in the prior art has little effect, and this method often results in a decrease in Q value and an increase in device size, which is not favorable for miniaturization of the device.
In addition, the method of using a piston at the end (fig. 10 shows a schematic top view of a conventional temperature compensation resonator in which a thickened widening layer 11 is formed at the end of an interdigital electrode) cannot effectively suppress the stray waves, but is rather limited in high-frequency applications. The reason for this is that high frequency bands usually mean that the finger pitch can be greatly reduced, limited by the lithography machine precision, widening the ends (i.e., forming a widened thickening layer 11 at the ends) can easily cause short circuiting of the fingers, causing device failure.
In addition, it has been proposed in the prior art that grooves can be cut between adjacent fingers to suppress stray waves, but this method is only applied to a general SAW using lithium tantalate as a piezoelectric substrate, and it is not known whether the method is effective in TC-SAW. However, this method is complicated to operate, and is difficult to implement especially at high frequencies, and it also reduces the rigidity and Q value of the device, making it difficult to ensure the effectiveness and stability of the device. Therefore, how to solve the above problem is particularly important in TC-SAW design.
The present invention has been made in view of the above problems, and an object thereof is to provide a temperature compensation resonator capable of suppressing a spurious response and improving device performance, and a method for manufacturing the same.
Technical scheme for solving technical problem
In order to solve the above problem, a temperature compensation resonator according to the present invention includes: a piezoelectric substrate; an interdigital electrode comprising a 1 st electrode and a 2 nd electrode configured as an interdigital structure, and both the 1 st electrode and the 2 nd electrode being formed on the piezoelectric substrate; a bus bar including a 1 st bus bar and a 2 nd bus bar arranged in parallel with each other, the 1 st bus bar and the 2 nd bus bar each being formed on the piezoelectric substrate, the 1 st bus bar being connected to one end of the 1 st electrode, the 2 nd bus bar being connected to one end of the 2 nd electrode; a thickening layer formed on the interdigital electrode; and the temperature compensation layer is made of a temperature compensation material and covers the interdigital electrode, the bus bar and the thickening layer, wherein a groove is dug in a gap area between the 1 st electrode and the 2 nd bus bar of the piezoelectric substrate, the groove is also dug in a gap area between the 2 nd electrode and the 1 st bus bar of the piezoelectric substrate, and the temperature compensation material is filled in the groove.
Effects of the invention
According to the temperature compensation type resonator and the manufacturing method thereof of the present invention, the following technical effects are provided.
(1) Compared with the conventional piston method (i.e. forming a widening and thickening layer on the interdigital electrodes), the invention does not need to widen the end portions of the interdigital electrodes (i.e. does not need side piston, i.e. a side widening layer), so that the short circuit of the interdigital transducer caused by the side piston (i.e. the side widening layer) is not needed to be worried about.
(2) Compared with the method for digging the groove between the adjacent finger bars, the method for digging the groove between the interdigital electrode and the bus bar has the advantages that the groove is dug in the gap area between the interdigital electrode and the bus bar, so that the engineering quantity and the operation difficulty are greatly reduced, and the reliability is greatly improved.
(3) By opening the groove in the gap region and forming the thickening layer on the interdigital electrode, not only is the stray response eliminated, but also the high Q value of the device can be ensured. Meanwhile, the design of the device is more flexible.
(4) By filling the trench with the temperature compensation material, the frequency Temperature Coefficient (TCF) of the device can be further improved.
Drawings
Fig. 1 is a detailed configuration diagram of a temperature compensation resonator according to an embodiment of the present invention.
Fig. 2 is a schematic perspective view of a temperature compensation resonator according to an embodiment of the present invention.
Fig. 3 is a sectional view taken along line a-a of fig. 2.
Fig. 4 is a graph of admittance frequency of the temperature compensation resonator according to example 1.
Fig. 5 is a graph of admittance frequency of the temperature compensation resonator according to example 2.
Fig. 6 is an admittance frequency plot of the temperature compensation resonator according to example 3.
Fig. 7 is a graph of admittance frequency of the temperature compensation resonator according to example 4.
Fig. 8 is an admittance frequency plot of the temperature compensation resonator according to example 5.
Fig. 9 is an admittance frequency plot of the temperature compensation resonator according to example 6.
Fig. 10 is a schematic top view of a conventional temperature compensation resonator.
Detailed Description
Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.
Fig. 1 is a detailed configuration diagram of a temperature compensation resonator according to an embodiment of the present invention. Fig. 2 is a schematic perspective view of a temperature compensation resonator according to an embodiment of the present invention. Fig. 3 is a sectional view taken along line a-a of fig. 2.
As shown in fig. 1 to 3, the temperature compensation resonator according to the present invention includes a piezoelectric substrate 1, interdigital electrodes 2, a thickening layer 3, bus bars 4, a temperature compensation layer 5, and a frequency modulation layer 6.
The piezoelectric substrate 1 is made of lithium niobate (LiNbO)3) The tangent angle is 15 degrees +/-5 degrees Y-X LiNbO3The corresponding euler angles are (0 °, -75 ° ± 5 °,0 °). Among them, the cut angle of the piezoelectric substrate 1 is preferably 15 °, and the corresponding euler angle is (0 °, -75 °,0 °).
The interdigital electrode 2 is formed on the piezoelectric substrate 1, and is composed of a 1 st electrode 2A and a 2 nd electrode 2B. In fig. 1 and 2, only one 1 st electrode 2A and one 2 nd electrode 2B are shown for convenience of explanation. However, in practice, a plurality of 1 st electrodes 2A and a plurality of 2 nd electrodes 2B are formed on the piezoelectric substrate 1, arranged alternately at intervals, and configured in an interdigital structure, thereby forming the interdigital electrodes 2.
The interdigital electrode 2 can be one or more of Al, Cu and Pt. For ease of processing, the interdigitated electrodes 2 are preferably Cu.
A thickening layer 3 is formed on the interdigital electrode 2. Each interdigital electrode (i.e., the 1 st electrode 2A and the 2 nd electrode 2B) has two thickening layers 3, i.e., a thickening layer 3A, a thickening layer 3B, formed thereon.
Specifically, the thickening layer 3A is formed on one end of the 1 st electrode 2A near the 2 nd bus bar 4B, and similarly, the thickening layer 3A is also formed on one end of the 2 nd electrode 2B near the 1 st bus bar 4A. Further, a thickening layer 3B is formed at a portion of the 1 st electrode 2A close to the 1 st bus bar 4A and flush with one end of the adjacent 2 nd electrode 2B, and similarly, a thickening layer 3B is also formed at a portion of the 2 nd electrode 2B close to the 2 nd bus bar 4B and flush with one end of the adjacent 1 st electrode 2A.
The thickened layers 3A and 3B are made of the same material as the interdigital electrode 2, i.e., one or more of Al, Cu, and Pt. For ease of processing, the thickening layer 3 is preferably Cu.
The thickness of the thickening layer 3 is 40 to 70nm, preferably 55 nm. The width of the thickening layer 3 may be equal to or less than the width of the interdigital electrode 2.
Further, if the wavelength of the acoustic wave excited by the temperature compensation resonator according to the present invention is λ, the length of the thickening layer 3 is 0.25 λ to λ, preferably λ/2.
A groove 8 is dug in a gap region between the 1 st electrode 2A and the 2 nd bus bar 4B of the piezoelectric substrate 1, and a groove 8 is also dug in a gap region between the 2 nd electrode 2B and the 1 st bus bar 4A of the piezoelectric substrate 1.
The width of the gap region is L _ gap, the width of the trench 8 is L, and the depth of the trench 8 is H.
In this case, the width L _ gap of the gap region is 0 to 2 λ, and the size of L _ gap is preferably 1.6 μm.
The width L of the trench 8 is less than or equal to the width L _ gap of the gap region, i.e., L ≦ L _ gap. Among them, the preferred size of L is 1 to 1.6 μm.
The depth H of the groove 8 satisfies 0 < H.ltoreq.2lambda, wherein preferably the size of H satisfies lambda/4 < H.ltoreq.lambda.
The interdigital electrodes 2, the thickening layer 3, and the bus bars 4 are covered with a temperature compensation layer 5 made of a temperature compensation material, and further, the grooves 8 are filled with the temperature compensation material until they are flush with the surface of the piezoelectric substrate 1. Among them, the temperature compensation material is preferably silicon dioxide.
In addition, in consideration of process errors, in order to facilitate fine adjustment of the operating frequency, the temperature compensation layer 5 of the temperature compensation type resonator may be covered with a frequency modulation layer 6. The frequency modulation layer 6 is one or more of silicon nitride, silicon dioxide, aluminum nitride and silicon carbide. For example, when the frequency is higher, a silicon dioxide layer may be covered on the temperature compensation layer 5 to adjust the frequency lower, and when the frequency is lower, a silicon nitride layer may be covered on the temperature compensation layer 5 to adjust the frequency higher.
According to the temperature compensation type resonator configured as described above, compared to the conventional piston method (i.e., forming a widening and thickening layer on the interdigital electrode 2), the present invention does not require widening of the end of the interdigital electrode 2 (i.e., does not require a side piston, i.e., a side widening layer), and therefore, there is no fear that the side piston (i.e., the side widening layer) causes a short circuit of the interdigital transducer.
In addition, compared with the method of digging the groove between the adjacent fingers (namely, the interdigital electrode 2), the groove 8 is dug in the gap area between the interdigital electrode 2 and the bus bar 4, so that the engineering quantity and the operation difficulty are greatly reduced, and the reliability is greatly improved.
By opening the trench 8 in the gap region and forming the thickening layer 3 on the interdigital electrode 2, not only is the spurious response eliminated, but also a high Q value of the device can be ensured. Meanwhile, the design of the device is more flexible.
In addition, the temperature compensation material is filled in the trench 8, thereby being beneficial to further improving the frequency temperature coefficient (TCF value) of the device.
Hereinafter, embodiments of the temperature compensation type resonator having different trench widths L and trench depths H will be described.
Example 1
Fig. 4 is a graph of admittance frequency of the temperature compensation resonator according to example 1.
Wherein the piezoelectric substrate 1 is 15 DEG +/-5 DEG Y-X LiNbO3λ is 1.7 μm, the interdigital electrode 2 is made of Cu and has a thickness of 0.3125 μm, the temperature compensation layer 5 is made of silicon dioxide and has a thickness of 1.5 μm, the depth H of the trench 8 is λ, the width L of the trench 8 is 1 μm, and the thickness of the thickening layer 3 is 55 nm.
As can be seen from the admittance frequency curve of fig. 4, the stray response of the temperature compensation type resonator is eliminated, and the device performance is better.
Example 2
Fig. 5 is a graph of admittance frequency of the temperature compensation resonator according to example 2.
Wherein the piezoelectric substrate 1 is 15 DEG +/-5 DEG Y-X LiNbO3λ is 1.7 μm, the interdigital electrode 2 is made of Cu and has a thickness of 0.3125 μm, the temperature compensation layer 5 is made of silicon dioxide and has a thickness of 1.5 μm, the depth H of the trench 8 is λ, the width L of the trench 8 is 1.6 μm, and the thickness of the thickening layer 3 is 55 nm.
As can be seen from the admittance frequency curve of fig. 5, the stray response of the temperature compensation resonator is eliminated, and the device performance is better.
Example 3
Fig. 6 is an admittance frequency plot of the temperature compensation resonator according to example 3.
Wherein the piezoelectric substrate 1 is 15 DEG +/-5 DEG Y-X LiNbO3λ is 1.7 μm, the interdigital electrode 2 is made of Cu and has a thickness of 0.3125 μm, the temperature compensation layer 5 is made of silicon dioxide and has a thickness of 1.5 μm, the depth H of the trench 8 is λ/2, the width L of the trench 8 is 1 μm, and the thickness of the thickening layer 3 is 55 nm.
As can be seen from the admittance frequency curve of fig. 6, the stray response of the temperature compensation resonator is eliminated, and the device performance is better.
Example 4
Fig. 7 is a graph of admittance frequency of the temperature compensation resonator according to example 4.
Wherein the piezoelectric substrate 1 is 15 DEG +/-5 DEG Y-X LiNbO3λ is 1.7 μm, the interdigital electrode 2 is made of Cu and has a thickness of 0.3125 μm, the temperature compensation layer 5 is made of silicon dioxide and has a thickness of 1.5 μm, the depth H of the trench 8 is λ/4, the width L of the trench 8 is 1 μm, and the thickness of the thickening layer 3 is 55 nm.
As can be seen from the admittance frequency curve of fig. 7, the spurious response of the temperature compensation resonator is eliminated, and the device performance is better.
Example 5
Fig. 8 is an admittance frequency plot of the temperature compensation resonator according to example 5.
Wherein the piezoelectric substrate 1 is 15 DEG +/-5 DEG Y-X LiNbO3λ is 1.7 μm, the interdigital electrode 2 is made of Cu and has a thickness of 0.3125 μm, the temperature compensation layer 5 is made of silicon dioxide and has a thickness of 1.5 μm, the depth H of the trench 8 is λ/8, the width L of the trench 8 is 1 μm, and the thickness of the thickening layer 3 is 55 nm.
As can be seen from the admittance frequency curve of fig. 8, the stray response of the temperature compensation resonator is eliminated, and the device performance is better.
Example 6
Fig. 9 is an admittance frequency plot of the temperature compensation resonator according to example 6.
Wherein the piezoelectric substrate 1 is 15 DEG +/-5 DEG Y-X LiNbO3λ is 1.7 μm, the interdigital electrode 2 is made of Cu and has a thickness of 0.3125 μm, the temperature compensation layer 5 is made of silicon dioxide and has a thickness of 1.5 μm, the depth H of the trench 8 is 2 λ, the width L of the trench 8 is 1 μm, and the thickness of the thickening layer 3 is 55 nm.
As can be seen from the admittance frequency curve of fig. 9, the stray response of the temperature compensation resonator is eliminated, and the device performance is better.
According to the embodiments 1 to 6, under various conditions that the trench 8 has different depths H and widths L, a smoother admittance frequency curve can be obtained, the stray response of the temperature compensation type resonator is eliminated, and the device performance is better. Thus, the design of the device also becomes more flexible.
A method for manufacturing a temperature compensation resonator according to the present invention will be described below.
(1) Trenches 8 are etched (excavated) in the piezoelectric substrate 1 by an etching process.
(2) The temperature compensation material is grown at the grooves 8 until it is flush with the surface of the piezoelectric substrate 1.
(3) Interdigital electrodes 2 are grown on a piezoelectric substrate 1, and bus bars 4 are provided.
(4) And growing a thickening layer 3 on the interdigital electrode 2.
(5) A temperature compensation material is grown on the interdigital electrodes 2, the bus bars 4, and the thickening layer 3 to form a temperature compensation layer 5, and the surface of the temperature compensation layer 5 is planarized by a polishing process.
(6) A frequency-modulated layer 6 is grown on the temperature compensation layer 5.
Although various exemplary embodiments have been described in the present application, the various features, aspects, and functions described in the embodiments are not limited to the specific embodiments, and may be applied to the embodiments individually or in various combinations.
Therefore, numerous modifications not illustrated are also contemplated as falling within the technical scope disclosed in the present application. For example, the case where at least 1 component is modified, added, or omitted is also included.
Industrial applicability of the invention
The temperature compensation type resonator related by the invention can be applied to a high-bandwidth temperature compensation type resonator of a radio frequency front-end filter.
Description of the reference symbols
1 piezoelectric substrate
2 interdigital electrode
2B No. 2 electrode
3 thickening layer
4 bus bar
5 temperature compensation layer
6 frequency modulation layer
7 gap region
8 grooves
9 depth of groove
10 trench width
11 widening thickening layer
The wavelength of the acoustic wave excited by the lambda temperature compensated resonator.
Claims (10)
1. A temperature compensated resonator, comprising:
a piezoelectric substrate;
an interdigital electrode comprising a 1 st electrode and a 2 nd electrode configured as an interdigital structure, and both the 1 st electrode and the 2 nd electrode being formed on the piezoelectric substrate;
a bus bar including a 1 st bus bar and a 2 nd bus bar arranged in parallel with each other, the 1 st bus bar and the 2 nd bus bar each being formed on the piezoelectric substrate, the 1 st bus bar being connected to one end of the 1 st electrode, the 2 nd bus bar being connected to one end of the 2 nd electrode;
a thickening layer formed on the interdigital electrode; and
a temperature compensation layer made of a temperature compensation material and covering the interdigital electrodes, the bus bars, and the thickening layer,
wherein a groove is dug in a gap region of the piezoelectric substrate between the 1 st electrode and the 2 nd bus bar, and the groove is dug in a gap region of the piezoelectric substrate between the 2 nd electrode and the 1 st bus bar,
the groove is filled with the temperature compensation material.
2. The temperature-compensated resonator of claim 1,
a 1 st thickening layer is formed on one end of the 1 st electrode close to the 2 nd bus bar and one end of the 2 nd electrode close to the 1 st bus bar,
and 2. a 2 nd thickening layer is formed at a position where the 1 st electrode is close to the 1 st bus bar and is flush with one end of the adjacent 2 nd electrode, and a position where the 2 nd electrode is close to the 2 nd bus bar and is flush with one end of the adjacent 1 st electrode.
3. The temperature-compensated resonator of claim 1,
the piezoelectric substrate is made of lithium niobate, and the cutting angle is 15 +/-5 degrees Y-X LiNbO3The corresponding euler angles are (0 °, -75 ° ± 5 °,0 °).
4. The temperature-compensated resonator of claim 1,
the width of the groove is below the width of a gap region between the interdigital electrode and the bus bar.
5. The temperature-compensated resonator of claim 4,
the depth of the groove is less than 2 times of the wavelength of the sound wave excited by the temperature compensation type resonator.
6. The temperature-compensated resonator of claim 2,
the thickness of the 1 st thickening layer and the 2 nd thickening layer is 40-70 nm.
7. The temperature-compensated resonator of claim 6,
the thickness of the 1 st thickening layer and the 2 nd thickening layer is 55 nm.
8. The temperature-compensated resonator of claim 1,
the temperature compensation material is silicon dioxide.
9. The temperature-compensated resonator of claim 1,
the temperature compensation layer is also covered with a frequency modulation layer, and the frequency modulation layer is one or more of silicon nitride, silicon dioxide, aluminum nitride and silicon carbide.
10. A method of manufacturing a temperature compensated resonator, comprising the steps of:
etching a groove on the piezoelectric substrate through an etching process;
growing a temperature compensation material at the trench until it is flush with the surface of the piezoelectric substrate;
growing interdigital electrodes on the piezoelectric substrate, and arranging bus bars;
growing a thickening layer on the interdigital electrode;
growing a temperature compensation material on the interdigital electrodes, the bus bars, and the thickening layer to form a temperature compensation layer, and planarizing a surface of the temperature compensation layer by a polishing process; and
and growing a frequency modulation layer on the temperature compensation layer.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115642895A (en) * | 2022-11-10 | 2023-01-24 | 锐石创芯(重庆)科技有限公司 | Surface acoustic wave device, filter, and electronic apparatus |
| CN116208119A (en) * | 2023-04-19 | 2023-06-02 | 深圳新声半导体有限公司 | Surface acoustic wave device and method for manufacturing the same |
| CN116366022A (en) * | 2023-03-20 | 2023-06-30 | 江苏卓胜微电子股份有限公司 | Temperature compensated acoustic surface transducer and method of manufacture |
| CN116667808A (en) * | 2023-08-02 | 2023-08-29 | 深圳新声半导体有限公司 | Temperature compensation type surface acoustic wave resonator and preparation method thereof |
| CN117040470A (en) * | 2023-07-24 | 2023-11-10 | 苏州声芯电子科技有限公司 | Surface acoustic wave resonator |
| CN117097296A (en) * | 2023-10-18 | 2023-11-21 | 深圳新声半导体有限公司 | Surface acoustic wave resonator device, method of manufacturing the same, and filter |
| CN117353702A (en) * | 2023-12-06 | 2024-01-05 | 深圳新声半导体有限公司 | IHP SAW filter and radio frequency front end |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115642895A (en) * | 2022-11-10 | 2023-01-24 | 锐石创芯(重庆)科技有限公司 | Surface acoustic wave device, filter, and electronic apparatus |
| CN115642895B (en) * | 2022-11-10 | 2024-05-28 | 锐石创芯(重庆)科技有限公司 | Surface acoustic wave device, filter, and electronic apparatus |
| WO2024125585A1 (en) * | 2022-12-14 | 2024-06-20 | 深圳新声半导体有限公司 | Surface acoustic wave resonator apparatus and manufacturing method therefor, and filter |
| CN116366022A (en) * | 2023-03-20 | 2023-06-30 | 江苏卓胜微电子股份有限公司 | Temperature compensated acoustic surface transducer and method of manufacture |
| CN116208119A (en) * | 2023-04-19 | 2023-06-02 | 深圳新声半导体有限公司 | Surface acoustic wave device and method for manufacturing the same |
| CN117040470A (en) * | 2023-07-24 | 2023-11-10 | 苏州声芯电子科技有限公司 | Surface acoustic wave resonator |
| CN116667808A (en) * | 2023-08-02 | 2023-08-29 | 深圳新声半导体有限公司 | Temperature compensation type surface acoustic wave resonator and preparation method thereof |
| CN117097296A (en) * | 2023-10-18 | 2023-11-21 | 深圳新声半导体有限公司 | Surface acoustic wave resonator device, method of manufacturing the same, and filter |
| CN117097296B (en) * | 2023-10-18 | 2024-02-06 | 深圳新声半导体有限公司 | Surface acoustic wave resonator device, method of manufacturing the same, and filter |
| CN117353702A (en) * | 2023-12-06 | 2024-01-05 | 深圳新声半导体有限公司 | IHP SAW filter and radio frequency front end |
| CN117353702B (en) * | 2023-12-06 | 2024-04-19 | 深圳新声半导体有限公司 | IHP SAW filter and radio frequency front end |
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