CN110277082B - Phononic crystal and thin film piezoelectric acoustic wave sensor - Google Patents
Phononic crystal and thin film piezoelectric acoustic wave sensor Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 209
- 239000010409 thin film Substances 0.000 title claims description 72
- 239000000758 substrate Substances 0.000 claims abstract description 83
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 58
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 43
- 229910052750 molybdenum Inorganic materials 0.000 claims description 43
- 239000011733 molybdenum Substances 0.000 claims description 43
- 229910052710 silicon Inorganic materials 0.000 claims description 43
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- 230000005540 biological transmission Effects 0.000 abstract description 12
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- 238000002310 reflectometry Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 20
- 230000008859 change Effects 0.000 description 17
- 239000004038 photonic crystal Substances 0.000 description 17
- 239000002131 composite material Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 235000019687 Lamb Nutrition 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
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- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000010356 wave oscillation Effects 0.000 description 1
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- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K9/00—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers
- G10K9/12—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated
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Abstract
The invention discloses a film piezoelectric acoustic wave sensor, comprising: the piezoelectric transducer comprises a substrate layer, a ground electrode layer and a piezoelectric layer which are arranged in a stacked mode, wherein at least one transducer is arranged on one side, far away from the ground electrode layer, of the piezoelectric layer; the two sides of the transducer are respectively provided with a phononic crystal at least formed on the piezoelectric layer, and the resonant frequency of the film piezoelectric acoustic wave sensor is positioned in the band gap of the phononic crystal. According to the film piezoelectric acoustic wave sensor, the phononic crystal is at least arranged on the piezoelectric layer, so that the stability of the mechanical vibration of the piezoelectric layer is improved, the reflectivity of acoustic waves is improved, the energy loss of acoustic wave transmission is reduced, and the quality factor of the sensor is improved. The invention discloses a phononic crystal which comprises a base body and a scatterer formed on the base body, wherein the base body is formed by laminating at least two dielectric layers, and the material of any one dielectric layer is different from that of other dielectric layers. The phononic crystal can effectively reduce the energy loss of sound waves, and can effectively improve the quality factor of the sensor when being applied to the film piezoelectric sound wave sensor.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a phononic crystal and thin film piezoelectric acoustic wave sensor.
Background
The piezoelectric film can realize the conversion between electric energy and mechanical energy by utilizing the piezoelectric effect of the piezoelectric film, and the film piezoelectric acoustic wave sensor greatly reduces the effective resonance quality of the sensor by utilizing a high-performance film piezoelectric material and a rapidly developed micro-nano manufacturing technology, so that the working frequency is continuously improved, and the detection sensitivity can be comparable to that of an optical sensor. Moreover, the manufacturing process of the film piezoelectric acoustic wave sensor is compatible with the CMOS process, so that the film piezoelectric acoustic wave sensor is more convenient for integrated and batch manufacturing, and has wide application prospect in the fields of various modern electronics, communication technology, analysis and detection and the like. However, due to the influence of radiation loss of sound waves, the thin film piezoelectric acoustic wave sensor is not easy to obtain a high quality factor (Q), and cannot effectively improve the signal-to-noise ratio of the sensor and reduce the detection limit of the sensor, which is not beneficial to obtaining a high-performance thin film piezoelectric acoustic wave sensor.
The phononic crystal is a novel structure with periodically distributed density and elastic constant. The periodic structure of the phononic crystal is responsible for the band structure that occurs when an elastic wave propagates in the phononic crystal, and in certain frequency ranges the elastic wave is forbidden to propagate (forbidden band) and in other frequency ranges there can be no loss of propagation (passband), and these frequency ranges in which the elastic wave cannot propagate are called the band gap of the phononic crystal. The band gap characteristic of the phononic crystal enables the phononic crystal to have wide application prospects in the aspects of noise suppression and isolation, vibration control of precision instruments and the like. In the prior art, a phononic crystal is combined with a thin film piezoelectric acoustic wave sensor, and a band gap characteristic of the phononic crystal is used for replacing a reflecting grating in the thin film piezoelectric acoustic wave sensor, so that the quality factor of the thin film piezoelectric acoustic wave sensor is improved. However, in the conventional thin film piezoelectric transducer provided with the phononic crystal, the phononic crystal is generally arranged on a silicon substrate structure which is not covered with a piezoelectric thin film, so that the energy of sound waves reflected by the phononic crystal is limited, and the improvement of the quality factor of the thin film piezoelectric acoustic wave transducer is not facilitated.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defects that the energy of sound wave reflection of the film piezoelectric acoustic wave sensor provided with the phononic crystal in the prior art is limited, and the quality factor of the film piezoelectric acoustic wave sensor cannot be effectively improved.
Therefore, the invention provides the following technical scheme:
in a first aspect, the present invention provides a thin film piezoelectric acoustic wave sensor comprising: the piezoelectric transducer comprises a substrate layer, a ground electrode layer and a piezoelectric layer which are arranged in a stacked mode, wherein at least one transducer is arranged on one side, away from the ground electrode layer, of the piezoelectric layer; and phononic crystals at least formed on the piezoelectric layer are respectively arranged on two sides of the transducer, and the resonant frequency of the film piezoelectric acoustic wave sensor is positioned in the band gap of the phononic crystals.
Optionally, in the thin film piezoelectric acoustic wave sensor, the phononic crystal includes a scatterer and a base, the base is at least composed of the piezoelectric layer, and the scatterer is a through hole which is arranged periodically and vertically penetrates through the base along the stacking direction;
preferably, the through holes are cylindrical holes, and the through holes are arranged in a square lattice to form the phononic crystal.
Optionally, in the thin film piezoelectric acoustic wave sensor, a groove is formed in a side of the substrate layer away from the ground electrode layer, and the phononic crystal is located in a first region corresponding to the groove.
Optionally, in the thin film piezoelectric acoustic wave sensor, the substrate of the phononic crystal is the piezoelectric layer, and the scatterers of the phononic crystal are periodically arranged through holes vertically penetrating through the piezoelectric layer;
preferably, the piezoelectric layer is an aluminum nitride layer; preferably, the thickness of the aluminum nitride layer is 2.2 μm.
Optionally, in the thin film piezoelectric acoustic wave sensor, the base body of the phononic crystal is composed of the piezoelectric layer and the ground electrode layer, and the scatterers of the phononic crystal are periodically arranged through holes vertically penetrating through the piezoelectric layer and the ground electrode layer;
preferably, the piezoelectric layer is an aluminum nitride layer, and the ground electrode layer is a molybdenum layer; preferably, the thickness of the aluminum nitride layer is 2.2 μm, and the thickness of the molybdenum layer is 0.2 μm.
Optionally, in the thin film piezoelectric acoustic wave sensor, a base of the phononic crystal is composed of the piezoelectric layer, the ground electrode layer and the substrate layer, and scatterers of the phononic crystal are periodically arranged through holes vertically penetrating through the piezoelectric layer, the ground electrode layer and the substrate layer;
preferably, the piezoelectric layer is an aluminum nitride layer, the ground electrode layer is a molybdenum layer, and the substrate layer is a silicon substrate layer; preferably, the thickness of the aluminum nitride layer is 2.2 μm, the thickness of the molybdenum layer is 0.2 μm, and the thickness of the silicon substrate layer forming the phononic crystal is 2.2 μm.
Optionally, in the above-mentioned thin film piezoelectric acoustic wave sensor, the at least one transducer includes an input transducer and an output transducer which are horizontally disposed opposite to each other, the photonic crystal is distributed on a side of the input transducer facing away from the input transducer, and a side of the output transducer facing away from the input transducer.
Optionally, in the thin film piezoelectric acoustic wave sensor, the distance between the phononic crystal and the transducer adjacent to the phononic crystal is such that the distance between the reflection surface of the phononic crystal and the transducer adjacent to the phononic crystal is (n x λ)/2, and n is an integer not less than 1.
In a second aspect, the invention provides a phononic crystal, which comprises a substrate and a scatterer formed on the substrate, wherein the substrate is formed by laminating at least two dielectric layers, and the material of any one dielectric layer is different from that of other dielectric layers; the scatterers are through holes which vertically penetrate through the substrate in the laminating direction of the dielectric layers and are arranged periodically.
Optionally, in the photonic crystal described above, the base of the photonic crystal is formed by stacking an aluminum nitride layer, a molybdenum layer, and a silicon substrate layer, the through holes vertically penetrate through the aluminum nitride layer, the molybdenum layer, and the silicon substrate layer, and the through holes are arranged in a square lattice;
preferably, the thickness of the aluminum nitride layer is 2.2 μm, the thickness of the molybdenum layer is 0.2 μm, and the thickness of the silicon substrate layer is 2.2 μm.
The technical scheme of the invention has the following advantages:
1. the invention provides a thin film piezoelectric acoustic wave sensor, comprising: the piezoelectric transducer comprises a substrate layer, a ground electrode layer and a piezoelectric layer which are arranged in a stacked mode, wherein at least one transducer is arranged on one side, far away from the ground electrode layer, of the piezoelectric layer; the two sides of the transducer are respectively provided with a phononic crystal at least formed on the piezoelectric layer, and the resonant frequency of the film piezoelectric acoustic wave sensor is positioned in the band gap of the phononic crystal.
In the film piezoelectric acoustic wave sensor, the two sides of the transducer are respectively provided with the phononic crystals, and acoustic waves generated by the excitation of the transducer are transmitted to the phononic crystals. Based on the bragg scattering mechanism, acoustic waves of a specific frequency cannot propagate in the phononic crystal, resulting in a band gap of the phononic crystal. The resonance frequency of the film piezoelectric acoustic wave sensor is located in the band gap of the photonic crystal by utilizing the band gap characteristic of the photonic crystal, so that the total reflection of the acoustic wave generated by the transducer can be realized, the acoustic wave is transmitted between the photonic crystals on two sides of the transducer and limited between the photonic crystals on two sides, and the mechanical resonance is formed. Through the arrangement of the phononic crystal, energy loss in the sound wave transmission process can be reduced, and the quality factor (Q) of the thin-film piezoelectric sound wave sensor is improved.
The phononic crystal in the prior art is generally arranged on a substrate layer which is not provided with a piezoelectric layer, and the phononic crystal is positioned in a non-vibration area. According to the invention, researches show that when the phononic crystal is only arranged on the substrate layer, the sound wave energy reflected by the phononic crystal can be limited, and particularly, the improvement of the phononic crystal which is only arranged on the substrate layer on the longitudinal wave energy dissipation is limited, so that the quality factor of the thin-film piezoelectric sound wave sensor cannot be effectively improved. Further, the present invention has found that when a phononic crystal is disposed on a piezoelectric layer, mechanical vibration of the piezoelectric layer does not affect the setting of the band gap characteristics of the phononic crystal, and a phononic crystal having a complete band gap can still be obtained. Therefore, the phononic crystal is arranged on at least the piezoelectric layer, so that on one hand, the stability of mechanical vibration of the thin film piezoelectric acoustic wave sensor is improved; on the other hand, by utilizing the band gap characteristic of the phononic crystal, the loss of acoustic wave energy in the thin film piezoelectric acoustic wave sensor can be further reduced, so that the quality factor of the thin film piezoelectric acoustic wave sensor is effectively improved, and the detection limit is further reduced.
2. The invention provides a film piezoelectric acoustic wave sensor, wherein a phononic crystal comprises a scattering body and a base body, the base body at least comprises a piezoelectric layer, and the scattering body is a through hole which is vertically arranged through the base body along the stacking direction and is periodically arranged. The phononic crystal is a two-dimensional phononic crystal, and can realize three-dimensional limitation on sound waves by a two-dimensional structure. The through holes arranged periodically form scatterers (air) of the phononic crystals, the density difference between the scatterers and the matrix of the phononic crystals is large, the phononic crystals with wide band gaps can be obtained, the effective reflection of the sound waves propagating along the surface of the piezoelectric layer and the longitudinal waves propagating along the thickness direction of the piezoelectric layer is realized, the energy dissipation is limited, and the thin-film piezoelectric acoustic wave sensor with high quality factor is obtained.
3. According to the film piezoelectric acoustic wave sensor, the groove is formed in one side, far away from the ground electrode layer, of the substrate layer, and the phononic crystal is located in the first area corresponding to the groove. By making the recess, the substrate layer forms an interface with air, thereby confining the acoustic wave to the piezoelectric layer. The phonon crystal is positioned in the first area corresponding to the groove, so that the phonon crystal is positioned in the effective resonance area of the thin film piezoelectric sensor, and the high-efficiency reflection of the sound wave energy is formed.
4. According to the film piezoelectric acoustic wave sensor provided by the invention, the base body of the phononic crystal can be composed of the piezoelectric layer, the piezoelectric layer and the ground electrode layer, or the piezoelectric layer, the ground electrode layer and the substrate layer, and the scattering body of the phononic crystal is a through hole which vertically penetrates through the base body and is periodically arranged. According to the invention, through research, when the base body of the phononic crystal is the piezoelectric layer, the piezoelectric layer is the aluminum nitride layer, and the thickness of the aluminum nitride layer is set to be 2.2 μm, the phononic crystal with the widest band gap can be obtained, and the effective reflection of the sound wave in a wide frequency range is realized. When the base body of the phononic crystal is composed of the piezoelectric layer and the ground electrode layer, the piezoelectric layer is an aluminum nitride layer and the ground electrode layer is a molybdenum layer, and when the aluminum nitride layer is 2.2 μm thick and the molybdenum layer is 0.2 μm thick, the phononic crystal with the widest band gap can be obtained. When the base body of the phononic crystal is composed of the piezoelectric layer, the ground electrode layer and the substrate layer, the piezoelectric layer is an aluminum nitride layer, the ground electrode layer is a molybdenum layer and the substrate layer is a silicon substrate layer, when the thickness of the aluminum nitride layer is 2.2 μm, the thickness of the molybdenum layer is 0.2 μm and the thickness of the silicon substrate layer forming the phononic crystal is 2.2 μm, the phononic crystal with the widest band gap can be obtained.
In addition, the invention discovers through research that when the base body of the phononic crystal is formed by the piezoelectric layer, the ground electrode layer and the substrate layer, the energy transmission loss value of the sound wave after being reflected by the phononic crystal is minimum, and the thin-film piezoelectric sound wave sensor with the best quality factor is obtained.
5. The invention provides a film piezoelectric acoustic wave sensor, wherein at least one transducer comprises an input transducer and an output transducer which are horizontally arranged oppositely, the input transducer acquires an electric signal, and a piezoelectric layer converts the electric signal into mechanical vibration through an inverse piezoelectric effect to generate acoustic waves; the side of the input transducer, back to the input transducer, and the side of the output transducer, back to the input transducer, are provided with the phononic crystals to form total reflection of sound waves, incident waves and reflected waves are overlapped between the phononic crystals on the two sides to generate mechanical resonance, the energy loss of the sound waves is effectively reduced, and then the sound waves are converted into electric signals to be output by the output interdigital transducer through the piezoelectric effect.
6. The phononic crystal provided by the invention has the advantages that the matrix is formed by laminating at least two dielectric layers, the material of any one dielectric layer is different from that of other dielectric layers, and the scatterer is a through hole which vertically penetrates through the matrix along the laminating direction of the dielectric layers and is periodically arranged. The phononic crystal is a composite phononic crystal, has high reflectivity to sound waves, can effectively reduce the transmission loss of sound wave energy, is applied to a thin-film piezoelectric sound wave sensor, and can obtain a sensor with high quality factor.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a phononic crystal provided in embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a unit cell phonon crystal provided in embodiment 1 of the present invention;
fig. 3 is a forbidden band diagram of a phononic crystal according to embodiment 1 of the present invention;
fig. 4 is a forbidden band diagram of another phononic crystal provided in embodiment 2 of the present invention;
fig. 5 is a graph illustrating a variation of a forbidden bandwidth of a phononic crystal according to a thickness of an aluminum nitride layer according to embodiment 1 of the present invention;
fig. 6 is a graph showing the change of the forbidden bandwidth of the phononic crystal according to the thickness of the molybdenum layer in embodiment 1 of the present invention;
fig. 7 is a graph showing the variation of the forbidden bandwidth of the phononic crystal according to the thickness of the silicon substrate layer in embodiment 1 of the present invention;
fig. 8 is a graph showing the band gap of the phononic crystal according to the thickness of the aluminum nitride layer and the molybdenum layer in embodiment 1 of the present invention;
fig. 9 is a graph showing the change of the forbidden bandwidth of the phononic crystal according to the thickness of the silicon substrate layer and the molybdenum layer provided in embodiment 1 of the present invention;
fig. 10 is a graph showing the variation of the forbidden bandwidth of the phononic crystal according to the thicknesses of the silicon substrate layer and the aluminum nitride layer provided in embodiment 1 of the present invention;
fig. 11 is a schematic structural view of a thin-film piezoelectric sensor provided in embodiment 2 of the present invention;
fig. 12 is a schematic view of the distance between a phonon crystal and an interdigital transducer in a thin film piezoelectric sensor provided in embodiment 2 of the present invention;
FIG. 13 is a graph showing the variation of the band gap with the filling factor of the phononic crystal in Experimental example 1 of the present invention;
FIG. 14 is a graph showing the results of measurement of transmission loss of acoustic waves by the phononic crystal in example 2 of the present invention and comparative example 1;
description of reference numerals:
1-phononic crystal, 11-matrix, 12-scatterer; 2-a substrate layer; 3-a ground electrode layer; 4-a piezoelectric layer; 5-a transducer.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
The present embodiment provides a phononic crystal 1, and the phononic crystal 1 is composed of a base 11 and a scattering body 12 formed on the base 11. As shown in fig. 1 and 2, the base 11 of the phononic crystal 1 is a composite dielectric layer formed by sequentially laminating three dielectric layers, namely a piezoelectric layer 4, a ground electrode layer 3 and a substrate layer 2; through holes which are vertically arranged and penetrate through the substrate 11 are arranged along the laminating direction of the dielectric layers, and a scattering body 12 of the phononic crystal 1 is formed.
Specifically, as shown in fig. 2 for the unit cell phonon crystal 1, the through hole is a cylindrical hole penetrating through the composite phonon crystal 1, and the smallest periodic structural unit of the phonon crystal 1 is shown in fig. 2. The unit cell phonon crystal 1 is arranged in a square lattice to form a phonon crystal 1 with periodically arranged through holes as shown in fig. 1, wherein the through holes extend along the length and width directions of the phonon crystal 1 to form an array arrangement mode.
As a modified embodiment, the phononic crystal 1 and the base 11 may be formed by laminating two, four, or the like dielectric layers, for example, the base 11 is a composite dielectric layer formed by laminating the piezoelectric layer 4 and the ground electrode layer 3, and the scatterers 12 are periodically arranged through holes that penetrate the base 11 perpendicularly to the laminating direction of the dielectric layers.
1. The band gap of the phononic crystal 1 is tested by selecting an aluminum nitride layer as a piezoelectric layer 4, a molybdenum layer as a ground electrode layer 3 and a silicon substrate layer as a substrate layer 2. Wherein, the distance a between two adjacent through holes in the phononic crystal 1 is 20 μm, the radius r of the through holes is 8.7 μm, and the thickness h of the composite dielectric layer is 4.2 μm, so as to obtain the forbidden band diagram of the phononic crystal 1 shown in fig. 3. As can be seen from fig. 3, the phononic crystal 1 formed on the composite dielectric layer retains the forbidden band characteristic of the phononic crystal 1, and is suitable for being applied to a thin-film piezoelectric acoustic wave sensor.
2. The influence of the thickness of each dielectric layer forming the phononic crystal 1 on the band gap width of the phononic crystal 1 is tested, and the specific test is as follows:
(1) as shown in fig. 5, the influence of the thickness variation of the aluminum nitride layer on the band gap width of the phononic crystal 1 was examined by using the phononic crystal 1 having only the aluminum nitride layer as the base 11 and the scatterers 12 as through holes arranged periodically and vertically penetrating the aluminum nitride layer, and as a result, the band gap of the phononic crystal 1 gradually becomes wider and narrower as the thickness of the aluminum nitride layer increases, and when the thickness of the aluminum nitride layer is 2.2 μm, the phononic crystal 1 having the widest band gap can be obtained. The above results indicate that in the thin-film piezoelectric sensor, the phononic crystal 1 having the aluminum nitride layer as the base 11 can maintain its band gap characteristic, and the optimum thickness value of the aluminum nitride layer is 2.2 μm.
(2) The phononic crystal 1 has only an aluminum nitride layer and a molybdenum layer stacked as a base 11, and the scatterers 12 are periodically arranged through holes vertically penetrating the aluminum nitride layer and the molybdenum layer. The thickness of the aluminum nitride layer was set to 2.2 μm, the thickness of the molybdenum layer was gradually increased from 0.2 μm to 0.8 μm, and the influence of the change in the thickness of the aluminum nitride layer on the band gap width of the phononic crystal 1 was examined, and as a result, as shown in fig. 6, the band gap width of the phononic crystal 1 tended to become narrower as the thickness of the molybdenum layer increased, and when the thickness of the molybdenum layer was 0.2 μm, the phononic crystal 1 having the widest band gap could be obtained. The above results indicate that, in the thin-film piezoelectric sensor, the phononic crystal 1 having the composite dielectric layer of the aluminum nitride layer and the molybdenum layer as the base 11 can maintain its band gap characteristic, and the optimum thickness value of the aluminum nitride layer in the phononic crystal 1 is 2.2 μm and the optimum thickness value of the molybdenum layer is 0.2 μm.
(3) The phononic crystal 1 has only an aluminum nitride layer, a molybdenum layer and a silicon substrate layer as a base 11, which are stacked, and the scatterers 12 are periodically arranged through holes that vertically penetrate through the aluminum nitride layer, the molybdenum layer and the silicon substrate layer. The thickness of the aluminum nitride layer was set to 2.2 μm and the thickness of the molybdenum layer was set to 0.2 μm, and the influence of the thickness variation of the silicon substrate layer on the band gap width of the phononic crystal 1 was examined, and as a result, as shown in fig. 7, the band gap width of the phononic crystal 1 tended to become wider and narrower first with the increase in the thickness of the silicon substrate layer, and when the thickness of the silicon substrate layer was 2.2 μm, the phononic crystal 1 having the widest band gap could be obtained. The above results indicate that, in the thin film piezoelectric sensor, the phononic crystal 1 having the composite dielectric layer of the aluminum nitride layer, the molybdenum layer and the silicon substrate layer as the base 11 can maintain its band gap characteristic, and the optimal thickness value of the aluminum nitride layer in the phononic crystal 1 is 2.2 μm, the optimal thickness value of the molybdenum layer is 0.2 μm, and the optimal thickness value of the silicon substrate layer is 2.2 μm.
3. Testing the influence of the material sound velocity of the medium layer on the band gap width change rate of the photonic crystal 1, specifically, keeping the total thickness of the piezoelectric layer 4, the ground electrode layer 3 and the substrate layer 2 unchanged, setting the piezoelectric layer 4 as an aluminum nitride layer, setting the substrate layer 2 as a silicon substrate layer, selecting a material with sound velocity gradient as the ground electrode layer 3, changing the thickness of the ground electrode layer 3, and detecting the influence of the thickness change of the ground electrode layer 3 formed by different materials with different sound velocities on the band gap width of the photonic crystal 1, wherein the results are shown in the following table 1:
TABLE 1
As can be seen from table 1, when the difference between the sound velocity gradient of the material of the ground electrode layer 3 and the sound velocities of the aluminum nitride layer and the silicon substrate layer is within 3000m/s (for example, the ground electrode layer 3 is selected to be a molybdenum layer), the change of the band gap width of the photonic crystal 1 caused by the thickness change of the ground electrode layer 3 can be controlled to be about 25% or less; the larger the difference value of the sound velocity between the ground electrode layer 3 and the aluminum nitride layer and the silicon substrate layer is, the larger the change of the band gap width of the phononic crystal 1 caused by the thickness change of the ground electrode layer 3 is, and the maximum value can reach 100%. On this basis, the following tests were continued while keeping the total thickness of the piezoelectric layer 4, the ground electrode layer 3, and the substrate layer 2 constant:
(1) keeping the thickness of the silicon substrate layer unchanged, reducing the thickness of the aluminum nitride layer from 2.2 μm to 0.2 μm, increasing the thickness of the molybdenum layer from 0.2 μm to 2.2 μm, detecting the change of the band gap width of the phononic crystal 1, and as a result, as shown in fig. 8, the frequency at which the band gap of the phononic crystal 1 is located is slightly reduced with the change of the thicknesses of the aluminum nitride layer and the molybdenum layer, but the band gap width is basically maintained unchanged.
(2) Keeping the thickness of the aluminum nitride layer unchanged, increasing the thickness of the molybdenum layer from 0.2 μm to 2.0 μm, decreasing the thickness of the silicon substrate layer from 2.0 μm to 0.2 μm, detecting the change of the band gap width of the phononic crystal 1, and as a result, as shown in fig. 9, the frequency at which the band gap of the phononic crystal 1 is located is slightly decreased with the change of the thickness of the molybdenum layer and the silicon substrate layer, but the band gap width is basically maintained unchanged.
(3) While the thickness of the molybdenum layer was kept constant, the thickness of the aluminum nitride layer was increased from 2.2 μm to 4.0 μm, the thickness of the silicon substrate layer was decreased from 2.0 μm to 0.2 μm, and the change in the band gap width of the phononic crystal 1 was examined, and as a result, as shown in fig. 10, the frequency at which the band gap of the phononic crystal 1 was located was slightly increased with the change in the thicknesses of the aluminum nitride layer and the silicon substrate layer, but the band gap width was maintained substantially constant.
From the above results, it is understood that the composite dielectric layer formed of the aluminum nitride layer, the molybdenum layer and the silicon substrate layer has a small influence on the band gap of the phononic crystal 1 due to the thickness change of each dielectric layer while the total thickness of the composite dielectric layer is maintained.
Example 2
The present embodiment provides a thin film piezoelectric acoustic wave sensor, as shown in fig. 11, which includes a substrate layer 2, a ground electrode layer 3, and a piezoelectric layer 4, which are sequentially stacked, and at least one interdigital transducer 5 is disposed on a side of the piezoelectric layer 4 away from the ground electrode layer 3. For example, the thin film piezoelectric acoustic wave sensor is of a double-port type, and two transducers 5, an input transducer and an output transducer, are horizontally arranged opposite to each other on a side of the piezoelectric layer 4 away from the ground electrode layer 3. The transducer 5 is in particular an interdigital transducer 5, the input transducer and the output transducer corresponding to the input interdigital transducer and the output interdigital transducer, respectively. The two sides of the transducer 5 are respectively provided with the phononic crystals 1, namely, the side of the input interdigital transducer back to the output interdigital transducer and the side of the output interdigital transducer back to the input interdigital transducer are respectively provided with the phononic crystals 1. The resonance frequency of the thin film piezoelectric acoustic wave sensor is located within the band gap of the phononic crystal 1.
The phononic crystal 1 is the phononic crystal 1 provided in embodiment 1, and is formed by a scattering body 12 and a base body 11, the base body 11 is a composite dielectric layer formed by stacking a piezoelectric layer 4, a ground electrode layer 3, and a silicon substrate layer, and the scattering body 12 is a through hole which is periodically arranged and vertically penetrates through the base body 11 in the stacking direction. The band gap width of the phononic crystal 1 is affected by the material parameters of the scatterer 12 and the matrix 11, the lattice form, the filling ratio of the scatterer 12, and the thickness of the matrix 11. The method comprises the steps of selecting a piezoelectric layer 4 forming a phononic crystal 1 as an aluminum nitride layer, a ground electrode layer 3 as a molybdenum layer, a substrate layer 2 as a silicon substrate layer, and a composite dielectric layer formed by laminating the aluminum nitride layer, the ground electrode layer 3 and the silicon substrate layer as a base body 11 of the phononic crystal 1, wherein through holes which penetrate through the base body 11 vertically and are arranged periodically are formed to form a scattering body 12 of the phononic crystal 1. Wherein, the through hole is a cylindrical hole, and the crystal lattice of the phononic crystal 1 is a square crystal lattice. Since the symmetry of the lattice affects the band gap width of the phononic crystal 1, the arrangement of the cylindrical through holes in a square lattice is advantageous for increasing the band gap width of the phononic crystal 1.
Alternatively, a groove is formed on the substrate layer 2 at a side away from the ground electrode layer 3, and an interface contacting with air is formed by the groove, so that the acoustic wave propagating in the thin film piezoelectric sensor is limited on the piezoelectric layer 4 thereon. The groove corresponds to the first area on the film piezoelectric acoustic wave sensor, the input interdigital transducer, the output interdigital transducer and the phononic crystals 1 on the two sides are arranged in the range of the first area, so that the phononic crystals 1 are located in the effective resonance area of the film piezoelectric acoustic wave sensor, and efficient reflection of acoustic waves is formed.
The resonance frequency of the thin film piezoelectric acoustic wave sensor is set to be within the band gap of the phonon crystal 1, for example, the thin film piezoelectric acoustic wave sensor is the lowest order symmetric mode (S)0) The Lamb wave sensor selects a certain frequency in the band gap of the phononic crystal 1 as the resonant frequency f of the Lamb wave sensorS0The wavelength lambda of the Lamb wave sensor can be calculated according to the following formula I, and the distance and the divergence of the Bragg reflection are calculatedThe width of the interdigital electrode is lambda/4, so that the width of the interdigital electrode is obtained;
for example, an aluminum nitride layer having a thickness of 2.2 μm, a molybdenum layer having a thickness of 0.2 μm, and a silicon substrate layer (i.e., a silicon substrate layer in the first region) forming the phononic crystal 1 having a thickness of 2.2 μm are provided; the distance a between two adjacent through holes in the phononic crystal 1 is 20 microns, the radius r of the through holes is 8.7 microns, and the phononic crystal 1 with the band gap ranging from 138.1 MHz to 182.6MHz can be obtained. As shown in FIG. 4, when a was set to 40 μm, the radius r of the through-hole was set to 16 μm, the thickness of the aluminum nitride layer was set to 2.2 μm, the thickness of the molybdenum layer was set to 0.2 μm, and the thickness of the silicon substrate layer forming the phononic crystal 1 was set to 10 μm, it was possible to obtain a phononic crystal 1 having a band gap ranging from 88.5 to 100.89 MHz. 96MHz within the band gap width range of the photonic crystal 1 is selected as the resonant frequency of the Lamb wave sensor, the wavelength lambda of the Lamb wave sensor is 96 mu m through calculation, and the width of the interdigital electrode is 24 mu m.
Further, the effective reflection plane of the phononic crystal 1 is determined by using the FDTD method, the reflection plane of the phononic crystal 1 is located at a distance (n x λ)/2 from the adjacent interdigital transducer 5, where n is an integer not less than 1, thereby further determining the distance D between the phononic crystal 1 and the adjacent interdigital transducer 5, and as shown in fig. 12, the distance D between the phononic crystal 1 and the adjacent interdigital transducer 5 is the distance between the side of the phononic crystal 1 close to the interdigital transducer 5 and the side of the interdigital transducer 5 close to the phononic crystal 1. And determining the distance D between the photonic crystal 1 and the interdigital transducer 5 according to the effective reflection plane, so that the incident wave and the reflected wave interact to form standing wave oscillation after the sound wave is reflected by the photonic crystal 1, and the sound wave is reflected back and forth between the photonic crystals 1 at two sides to form mechanical resonance wave. For example, in the Lamb wave sensor set with the above parameters, the distance D between the resulting phononic crystal 1 and the interdigital transducer 5 is 77.8 μm.
The working process of the film piezoelectric acoustic wave sensor is as follows: the voltage is applied between the input interdigital transducer and the ground electrode layer 3, the input interdigital transducer is excited to generate an electric signal, the piezoelectric layer 4 generates elastic mechanical waves by utilizing the inverse piezoelectric effect of the piezoelectric layer, the elastic mechanical waves are transmitted along the piezoelectric layer 4, after encountering the phononic crystal 1, the acoustic wave frequency is positioned in the band gap of the phononic crystal 1 and is reflected by the phononic crystal 1, the incident waves and the reflected waves interact to form mechanical resonance, and finally the mechanical resonance is output by the output interdigital electrode through the inverse piezoelectric effect. The phononic crystal 1 can limit sound waves between the phononic crystals 1 on two sides, so that energy dissipation of the sound waves is prevented, energy loss in the sound wave transmission process is effectively reduced, and the quality factor and detection limit of the film piezoelectric sound wave sensor are improved and reduced.
It should be noted that, in the conventional thin film piezoelectric acoustic wave sensor provided with the phononic crystal 1, the phononic crystal 1 is generally arranged on the substrate layer 2, avoiding the piezoelectric layer 4 of the thin film piezoelectric acoustic wave sensor, although the above design can utilize the phononic crystal 1 to make the acoustic wave form mechanical resonance to some extent, and the purpose of reducing the energy loss of the acoustic wave in the transmission process is achieved. However, the phononic crystal 1 disposed on the substrate layer 2 has limited reflection of acoustic wave energy, and particularly, cannot effectively limit energy dissipation of longitudinal waves, and thus limits improvement of quality factor of the thin film piezoelectric acoustic wave sensor due to the arrangement of the phononic crystal 1.
To solve the above problem, the phononic crystal 1 in the present embodiment is a composite phononic crystal 1 formed on the piezoelectric layer 4, the ground electrode layer 3, and the substrate layer 2. The present inventors have found through research that disposing the phononic crystal 1 on the piezoelectric layer 4 can maintain the band gap characteristics of the phononic crystal 1, resulting in a complete band gap (shown in fig. 3). On the basis, the phononic crystal 1 in the embodiment is arranged on the composite medium layer, so that on one hand, the stability of mechanical vibration of the thin-film piezoelectric acoustic wave sensor is improved; on the other hand, by utilizing the band gap characteristics of the phononic crystals 1, the acoustic waves form mechanical resonance between the phononic crystals 1 on two sides, so that the loss of acoustic wave energy in the thin-film piezoelectric acoustic wave sensor can be further reduced, the quality factor of the thin-film piezoelectric acoustic wave sensor is effectively improved, and the detection limit is further reduced.
Comparative example 1
This comparative example provides a thin film piezoelectric acoustic wave sensor, which is different from that of example 2 only in that: the only base 11 of the phononic crystal 1 consists of the silicon substrate layer as the substrate layer 2, and the through hole of the phononic crystal 1 is opened on the silicon substrate layer, and the piezoelectric layer 4 and the ground electrode layer 3 are prevented from being arranged.
Experimental example 1
This experimental example tests the effect of improving the acoustic wave transmission loss in the thin film piezoelectric acoustic wave sensor, which is obtained by forming the photonic crystal 1 on the aluminum nitride layer, the molybdenum layer, and the silicon substrate layer in the thin film piezoelectric acoustic wave sensor of example 2 and the photonic crystal 1 only on the silicon substrate layer in the thin film piezoelectric acoustic wave sensor of comparative example 1, as follows:
1. the change of the band gap width of the phononic crystal 1 in the thin film piezoelectric acoustic wave sensor is detected by adjusting the filling ratio of the phononic crystal 1 (i.e. the area of the cylindrical through hole/the area of the square lattice), and the result is shown in fig. 13, wherein f in fig. 131Representing the lower edge frequency, f, of the bandgap of the photonic crystal 12Representing the upper edge frequency of the bandgap of the phononic crystal 1.
2. The structural size of the phononic crystal 1 corresponding to the optimal band gap width is selected, the phononic crystal 1 formed on the composite medium layer in the example 2 is correspondingly arranged, the same structural size is obtained as that of the phononic crystal 1 formed only on the silicon substrate layer in the comparative example 1, and the transmission loss of the acoustic wave in the two thin-film piezoelectric sensors is compared, and the result is shown in fig. 14: the curve marked by a triangular symbol in the figure represents the transmission loss of the thin-film piezoelectric sensor in comparative example 1, and the curve marked by a circular symbol represents the transmission loss of the thin-film piezoelectric sensor in example 2. As can be seen from fig. 14, when the phononic crystal 1 is disposed on the composite dielectric layer of the silicon substrate layer, the molybdenum layer and the aluminum nitride layer, the reflection effect of the acoustic wave energy is enhanced and the transmission loss of the acoustic wave is reduced, compared to the phononic crystal 1 formed only on the silicon substrate layer, and therefore, the thin-film piezoelectric sensor provided in example 2 has a higher quality factor and a lower detection limit, compared to the thin-film piezoelectric sensor in comparative example 1.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (14)
1. A thin film piezoelectric acoustic wave sensor, comprising: the piezoelectric transducer comprises a substrate layer, a ground electrode layer and a piezoelectric layer which are arranged in a stacked mode, wherein at least one transducer is arranged on one side, away from the ground electrode layer, of the piezoelectric layer; phononic crystals at least formed on the piezoelectric layer are respectively arranged on two sides of the transducer, and the resonant frequency of the thin film piezoelectric acoustic wave sensor is positioned in a band gap of the phononic crystals;
the at least one transducer comprises an input transducer and an output transducer which are horizontally arranged oppositely, the phononic crystal is distributed on one side of the input transducer back to the input transducer, and the output transducer back to one side of the input transducer.
2. The thin film piezoelectric acoustic wave sensor according to claim 1, wherein the phononic crystal includes a scatterer and a base, the base is composed of at least the piezoelectric layer, and the scatterer is a periodically arranged through hole that vertically penetrates the base in the stacking direction.
3. The thin film piezoelectric acoustic wave sensor according to claim 2, wherein the through holes are cylindrical holes, and the through holes are arranged in a square lattice to form the phononic crystal.
4. The thin film piezoelectric acoustic wave sensor according to any one of claims 1 to 3, wherein a groove is formed in a side of the substrate layer away from the ground electrode layer, and the phononic crystal is located in the first region corresponding to the groove.
5. The thin film piezoelectric acoustic wave sensor according to any one of claims 1 to 3, wherein the base of the phononic crystal is the piezoelectric layer, and the scatterers of the phononic crystal are periodically arranged through holes that vertically penetrate the piezoelectric layer.
6. The thin film piezoelectric acoustic wave sensor according to claim 5, wherein the piezoelectric layer is an aluminum nitride layer.
7. The thin film piezoelectric acoustic wave sensor according to claim 6, wherein the aluminum nitride layer has a thickness of 2.2 μm.
8. The thin film piezoelectric acoustic wave sensor according to any one of claims 1 to 3, wherein the base body of the phononic crystal is composed of the piezoelectric layer and the ground electrode layer, and the scatterer of the phononic crystal is a periodically arranged through hole that vertically penetrates the piezoelectric layer and the ground electrode layer.
9. The thin film piezoelectric acoustic wave sensor according to claim 8, wherein the piezoelectric layer is an aluminum nitride layer, and the ground electrode layer is a molybdenum layer.
10. The thin film piezoelectric acoustic wave sensor according to claim 9, wherein the aluminum nitride layer has a thickness of 2.2 μm, and the molybdenum layer has a thickness of 0.2 μm.
11. The thin film piezoelectric acoustic wave sensor according to any one of claims 1 to 3, wherein the base body of the phononic crystal is composed of the piezoelectric layer, the ground electrode layer, and the substrate layer, and the scatterer of the phononic crystal is a periodically arranged through hole that vertically penetrates through the piezoelectric layer, the ground electrode layer, and the substrate layer.
12. The thin film piezoelectric acoustic wave sensor according to claim 11, wherein the piezoelectric layer is an aluminum nitride layer, the ground electrode layer is a molybdenum layer, and the substrate layer is a silicon substrate layer.
13. The thin film piezoelectric acoustic wave sensor according to claim 12, wherein the aluminum nitride layer has a thickness of 2.2 μm, the molybdenum layer has a thickness of 0.2 μm, and the silicon substrate layer forming the phononic crystal has a thickness of 2.2 μm.
14. The thin film piezoelectric acoustic wave sensor according to any one of claims 1 to 3, wherein the phononic crystal is located at such a distance from the transducer adjacent thereto that the reflecting surface of the phononic crystal is located at a distance of (n x λ)/2 from the transducer adjacent thereto, n being an integer not less than 1, λ being a wavelength of the sensor.
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| CN112491379B (en) * | 2020-10-21 | 2024-03-22 | 电子科技大学 | Surface acoustic wave resonator with phonon crystal reflector |
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| CN113114155A (en) * | 2021-03-22 | 2021-07-13 | 杭州电子科技大学 | Film bulk acoustic resonator based on phononic crystal |
| CN113507276B (en) * | 2021-06-22 | 2024-09-24 | 电子科技大学 | Phonon lattice plate calculation method of cell-like topological structure and micro-electromechanical resonator |
| CN113437947B (en) * | 2021-07-06 | 2023-03-28 | 电子科技大学 | Film bulk acoustic resonator based on photonic crystal inhibits side energy radiation |
| CN113937214A (en) * | 2021-09-11 | 2022-01-14 | 深圳市真元天成科技有限公司 | Piezoelectric thin film sheet and piezoelectric thin film sensor |
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