CN110273146A - 一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法 - Google Patents

一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法 Download PDF

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CN110273146A
CN110273146A CN201910619632.9A CN201910619632A CN110273146A CN 110273146 A CN110273146 A CN 110273146A CN 201910619632 A CN201910619632 A CN 201910619632A CN 110273146 A CN110273146 A CN 110273146A
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王丽娟
朱阳阳
孙强
王璐
侯宇航
仲赛
谢强
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Changchun University of Technology
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Abstract

本发明是一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法。在ITO玻璃衬底上采用溶胶‑凝胶法制备氧化铝薄膜，然后旋涂PMMA薄膜制备Al2O3/PMMA双层电介质。接着真空蒸镀p‑6P薄膜以诱导生长CuPc薄膜作为气体敏感层，最后真空沉积银叉指电极构成Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器。制备的双层电介质传感器在室温下具有高稳定性、高灵敏度和响应度、低检测限、快速响应/回复等优点。

Description

一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备 方法
技术领域
本发明涉及一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法，属于有机气体传感器领域。
背景技术
气体传感器在小型化和高灵敏度等方面已经取得了很大进展，被用于选择性地检测二氧化氮（NO2）等有毒有害的环境气体。作为化石燃料燃烧的主要产物，NO2与环境问题和人类慢性疾病息息相关。有机场效应晶体管（OFETs）具有多参数可及性、灵活性和易于大规模制造等内在优势，可用于制备便携式、可靠的气体传感器和有机光存储器件。
为了提高OFETs气体传感器的性能，研究人员尝试了多种方法，包括改变半导体和电介质的材料、不同的器件结构、界面改性、晶体工程、纳米/微结构等。
然而，具有快速响应/低回复时间、良好环境稳定性和高灵敏度的OFETs气体传感器仍然难以制造，并且不足以用于氧化性气体。作为一种典型的聚合物电介质，聚甲基丙烯酸甲酯（PMMA）可以产生更光滑连续的表面，并且可以与其他材料混合形成多层电介质以提高器件的性能。Al2O3是一种无机高介电常数材料，能够低电压操作，通常用于制备OFETs器件。但采用真空溅射或阳极氧化法制备的氧化铝电介质成本高、工艺复杂。
因此，本发明采用简化工艺制备Al2O3/PMMA双层绝缘层作为栅极，使用p-6P诱导的CuPc作为气敏层，得到了更加有序的有机薄膜和更好的电学性能，制备了高灵敏度的有机场效应晶体管NO2气体传感器。并且基于双层电介质的OFETs-NO2传感器具有工艺简单、成本低、灵敏度高、快速响应/回复等特点。
发明内容
本发明是一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法，体现了简化工艺、低成本、高灵敏度、快速响应/回复等内在优势。
气体传感器主要通过旋涂法和真空蒸镀法制备，传感器结构如图一所示，使用ITO玻璃为衬底（1），在衬底上旋涂Al2O3溶液的胶体，采用溶胶-凝胶法制备氧化铝薄膜（2），将PMMA溶液均匀的旋涂在Al2O3薄膜上，形成PMMA薄膜（3），然后采用真空蒸镀法在PMMA薄膜上沉积一层超薄p-6P薄膜（4），接着以p-6P薄膜诱导生长一层CuPc薄膜作为气体敏感层（5），最后真空沉积银叉指电极（6）。
将硝酸铝溶解在乙二醇乙醚中，制备了Al2O3溶液的胶体，然后将Al2O3溶胶以1200转/分的转速旋涂在ITO玻璃基底（1）上，立即置于150℃的烘箱中干燥10分钟，形成Al2O3薄膜（2）。将PMMA溶解在三氯甲烷中，配置成50 mg/ml的PMMA溶液，将PMMA溶液以1500转/分的转速旋涂在Al2O3薄膜上，再置于120℃的烘箱中干燥1小时，形成PMMA薄膜（3）接着在130℃的衬底温度、6×10-4 Pa下，真空沉积3 nm厚的p-6P薄膜作为诱导层（4），沉积速率为0.1nm/min。在同样的条件下真空沉积30 nm厚的CuPc薄膜作为气体敏感层（5），沉积速率为0.2nm/min。最后在8×10-4 Pa真空度下蒸镀银叉指电极，厚度为100 nm，其通道长度和宽度分别为10 mm和250 um。
附图说明
图1：双层电介质有机场效应晶体管NO2传感器结构示意图；
图2：NO2气体传感器工作示意图。
具体实施方式
本发明是一种溶胶-旋涂Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法，具体实现过程如图2所示。
1.采用ITO玻璃作为衬底层（1）。
2.使用匀胶机在衬底层（1）上分别旋涂Al2O3溶胶层（2）和PMMA薄膜层（3）构成复合绝缘层。Al2O3溶胶层的厚度为100 nm，PMMA薄膜的厚度为50 nm。
3.在PMMA薄膜（3）上真空沉积p-6P薄膜作为诱导层（4），厚度为3 nm,沉积速率为0.1 nm/min；以p-6P诱导生长CuPc薄膜作为气体敏感层（5），厚度为30 nm，沉积速率为0.2nm/min，真空度均为6×10-4 Pa。
4.最后在CuPc薄膜上真空蒸镀银叉指电极（5），真空度为8×10-4 Pa，厚度为100nm。
5.在配气系统中进行测试，通入NO2气体（7），气体与CuPc发生氧化还原反应，将测试结果转化为电信号，随着NO2气体的浓度发生变化，得到的电信号也不同，借此能够实现对NO2气体的检测。双介电层器件在室温下具有高稳定性、高灵敏度和响应度、低检测限、响应/回复时间短等优点。

Claims (6)

1.一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法包括：ITO玻璃衬底（1），Al2O3凝胶层（2），PMMA介电层（3），p-6P诱导层（4），CuPc敏感层（5），银叉指电极（6）。
2.根据权利要求1所述的一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法，其特征在于，Al2O3凝胶层（2）采用九水硝酸铝做溶质，乙二醇乙醚为溶剂配置成氧化铝溶胶，旋涂速度为1200转/分，厚度为100 nm。
3.根据权利要求1所述的一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法，其特征在于，PMMA介电层（3）采用PMMA为溶质，三氯甲烷为溶剂，配置成50 mg/ml的PMMA溶液，旋涂速度位1500转/分，厚度为50 nm。
4.根据权利要求1所述的一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法，其特征在于，p-6P诱导层（4）的衬底温度为130℃，厚度为3 nm，沉积速率为0.1 nm/min。
5.根据权利要求1所述的一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法，其特征在于，CuPc敏感层（5）的厚度为30 nm，沉积速率为0.2 nm/min。
6.根据权利要求1所述的一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法，其特征在于，银叉指电极（6）厚度为100 nm，通道长度和宽度分别为10 mm和250 um。
CN201910619632.9A 2019-07-10 2019-07-10 一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法 Pending CN110273146A (zh)

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