CN108508075A - 一种界面修饰底接触电极有机薄膜晶体管气体传感器的制备方法 - Google Patents
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Abstract
本发明设计了一种界面修饰底接触电极有机薄膜晶体管气体传感器的制备方法,包括衬底层(1)、修饰层(2)、叉指电极(3)、诱导层(4)和气体敏感层(5)。采用回收的废旧液晶屏拆卸处理得到氮化硅衬底作为衬底层(1),聚甲基丙烯酸甲脂旋涂在氮化硅衬底表面作为修饰层(2),为电极和诱导层形成良好的生长界面。蒸镀金材料作为底接触的叉指电极(3),埋藏在诱导层下面,保护叉指金电极,及提高NO2气体(6)与气体敏感层(5)接触面积。在叉指电极(3)上连续真空沉积p‑六联苯作为诱导层(4),酞菁铜为气体敏感层(5),形成高有序的薄膜。该传感器绿色环保,且有序薄膜为敏感层具有高气体灵敏度,快的响应速度和回复时间。
Description
技术领域
本发明涉及一种界面修饰底接触电极有机薄膜晶体管气体传感器制备方法,属于有机气体传感器技术领域。
背景技术
现代技术的飞速发展,给人类带来了生产和生活上的高福利,同时也带来了污染,其中气体污染就是最为严重的污染之一。氮氧化物NOx(NO和NO2)作为大气污染的主要气体之一,对环境和人体都会造成极大的伤害。NO在空气中会逐渐氧化成NO2。因此,应用气体传感器对NO2进行监测有着重要意义。
有机半导体材料有着低能耗、可大面积加工、来源广泛、分子结构可控等众多优点,其中酞菁类化合物具有大π环共轭,酞菁分子富电子并且具有不同程度的稳定性,和NO2分子能够发生可逆的相互作用。所以酞菁类化合物目前被广泛应用于有机半导体研究。另外,回收的废旧液晶屏拆卸后处理得到的玻璃基板,上面覆盖有200 nm ~ 300 nm的Al/Nd,和厚度为300 nm ~ 400 nm的氮化硅,经过处理的氮化硅层是一种很好的基底材料。
本发明利用酞菁铜作为对NO2气体监测的有机半导体敏感层材料,来制备界面修饰底接触电极有机薄膜晶体管气体传感器。同时,采用回收处理后的氮化硅作为衬底层;利用聚甲基丙烯酸甲脂修饰衬底表面形成修饰层;采用金材料来制备底接触的叉指电极;利用p-六联苯异质诱导生长气体敏感层酞菁铜,从而获得高连续性、高性能的有机薄膜晶体管气体传感器。
发明内容
本发明是一种界面修饰底接触电极有机薄膜晶体管气体传感器制备方法,可以实现资源的回收利用,提高气体传感器传感器的灵敏度、响应速度和回复时间。
传感器结构如图1所示,使用氮化硅作为衬底层(1),表面旋涂聚甲基丙烯酸甲脂作为修饰层(2),然后蒸镀金材料作为底接触的叉指电极(3),上面覆盖有机材料p-六联苯作为诱导层(4),诱导生长有机半导体材料酞菁铜作为气体敏感层(5)。
本发明的氮化硅衬底层(1),是回收的废旧液晶屏拆卸后处理得到的玻璃基板,上面覆盖有200 nm ~ 300 nm的Al/Nd,和厚度为300 nm ~ 400 nm的氮化硅,属于废旧材料的资源回收利用。
选用聚甲基丙烯酸甲脂作为修饰层(2)。聚甲基丙烯酸甲脂首先溶解于氯仿溶液中,浓度为10 mg/ml,然后使用匀胶机旋涂在氮化硅衬底层(1)表面,旋涂速度为前转300rpm,旋涂时间6 s;后转2000 rpm,旋涂时间30 s。
在聚甲基丙烯酸甲脂诱导层(2)上面,使用掩膜板遮挡蒸镀金材料作为底接触的叉指电极(3),蒸镀真空为7.0×10-4 ~ 8.0×10-4 Pa。与传统顶接触的气体传感器相比,既能保护叉指电极(3)不被污染,也能增加气体敏感层(5)与NO2气体(6)的接触面积。
最后,采用真空蒸镀的方法,连续蒸镀6 nm ~ 9 nm厚度的p-六联苯作为诱导层(4)覆盖底接触结构的叉指电极(3),诱导生长20 nm ~ 25 nm厚度的酞菁铜作为气体敏感层(5)。蒸镀过程中,衬底温度设定为180 ℃,蒸镀真空5.0×10-4 ~ 6.0×10-4 Pa。从而获得界面修饰底接触电极有机薄膜晶体管气体传感器,绿色环保,并且高有序的薄膜形成的气体敏感层(5)具有更高的气体灵敏度,更快的响应速度和回复时间。
附图说明:
图1 界面修饰底接触电极有机薄膜晶体管气体传感器的立体结构图。
图2 界面修饰底接触电极有机薄膜晶体管气体传感器断面结构示意图。
具体实施方式
本发明是一种界面修饰底接触电极有机薄膜晶体管气体传感器的制备方法,具体实现过程如图2所示:
a) 回收的废旧液晶屏拆卸后处理得到的玻璃基板,上面覆盖有200 nm ~ 300 nm的Al/Nd,和厚度为300 nm ~ 400 nm的氮化硅,为衬底层(1)。
b)使用匀胶机在氮化硅衬底层(1)上旋涂制备聚甲基丙烯酸甲脂作为修饰层(2)修饰界面,为叉指电极(3)和诱导层(4)的生长提供连续性好的生长界面。
c)在聚甲基丙烯酸甲脂的修饰层(2)表面使用掩膜板遮挡蒸镀金材料作为叉指电极(3),蒸镀真空为7.0×10-4 ~ 8.0×10-4 Pa,蒸镀温度为室温。叉指电极(3)为底接触结构,要预留出源、漏极外接端。
d)依次在底接触结构的叉指电极(3)上面真空蒸镀有机材料p-六联苯作为诱导层(4),厚度为6 nm ~ 9 nm,在p-六联苯诱导层(4)表面诱导生长半导体材料酞菁铜作为气体敏感层(5),蒸镀厚度为20 nm ~ 29 nm。衬底温度设定为180 ℃,蒸镀真空5.0×10-4 ~ 6.0×10-4 Pa。
Claims (5)
1.本发明是一种界面修饰底接触电极有机薄膜晶体管气体传感器的制备方法,其特征在于,包括衬底层(1),修饰层(2),叉指电极(3),诱导层(4),气体敏感层(5),首先在氮化硅材料的衬底层(1)表面旋涂聚甲基丙烯酸甲脂的修饰层(2),衬底层(1)采用的是回收废旧液晶屏拆卸处理后得到的氮化硅衬底,然后蒸镀金属材料金为底接触的叉指电极(3),金材料的叉指电极(3)上面覆盖蒸镀p-六联苯诱导层(4)和异质诱导生长酞菁铜的气体敏感层(5),底接触的叉指电极(3)被保护的同时,增加了酞菁铜气体敏感层(5)与NO2气体(6)的接触面积。
2.根据权利要求1所述的一种界面修饰底接触电极有机薄膜晶体管气体传感器的制备方法,其特征在于,采用回收的废旧液晶显示屏拆卸后得到的氮化硅材料为衬底层(1),氮化硅衬底(1)以玻璃做基底,有200~300 nm的Al/Nd层和300~400 nm厚度的氮化硅层,实现资源的回收利用。
3.根据权利要求1所述的一种界面修饰底接触电极有机薄膜晶体管气体传感器的制备方法,其特征在于,聚甲基丙烯酸甲脂溶解在氯仿溶液中,浓度10 mg/ml,旋涂速度为前转300 rpm,旋涂时间6 s,后转2000 rpm,旋涂时间30 s,旋涂制备聚甲基丙烯酸甲脂薄膜的修饰层(2),为叉指电极(3)和p-六联苯的诱导层(4)的生长形成良好的修饰界面。
4.根据权利要求1所述的一种界面修饰底接触电极有机薄膜晶体管气体传感器的制备方法,其特征在于,在7.0×10-4 ~ 8.0×10-4 Pa真空度下蒸镀金材料形成底接触的叉指电极(3),衬底温度为室温,并且预留出源、漏电极外接端。
5.根据权利要求1所述的一种界面修饰底接触电极有机薄膜晶体管气体传感器的制备方法,其特征在于采用真空蒸镀沉积的方法,在蒸镀真空对为5.0×10-4 ~ 6.0×10-4 Pa,衬底温度为180 ℃,蒸镀速度为0.1 nm/min下,连续蒸镀厚度为6~9 nm的 p-6P诱导层(4)和厚度为20 ~25 nm的酞菁铜的气体敏感层(5),在异质诱导生长下形成高有序的薄膜。
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CN110273146A (zh) * | 2019-07-10 | 2019-09-24 | 长春工业大学 | 一种Al2O3/PMMA双层电介质OFETs高灵敏NO2气体传感器制备方法 |
CN112649472A (zh) * | 2021-01-09 | 2021-04-13 | 长春工业大学 | 一种基于静电喷涂聚合物绝缘层的no2气体传感器的制备方法 |
CN113147106A (zh) * | 2021-03-22 | 2021-07-23 | 长春工业大学 | 一种高防潮性稳定的室温气体传感器制备方法 |
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