CN110266297B - IGBT driving circuit - Google Patents

IGBT driving circuit Download PDF

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Publication number
CN110266297B
CN110266297B CN201910551781.6A CN201910551781A CN110266297B CN 110266297 B CN110266297 B CN 110266297B CN 201910551781 A CN201910551781 A CN 201910551781A CN 110266297 B CN110266297 B CN 110266297B
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igbt
pin
chip
circuit
resistor
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CN110266297A (en
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王利
周通
李俊峰
李方俊
李�浩
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Beijing Machinery Equipment Research Institute
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Beijing Machinery Equipment Research Institute
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention relates to a driving circuit of an IGBT, belongs to the technical field of electronic circuits, solves the problem that the driving circuit responds to a fault state rapidly and accurately, and protects the IGBT; the circuit comprises a driving chip U1 and a protection circuit; the driving chip U1 is ACPL-339J and drives IGBT according to the input high-frequency pulse modulation signal; the protection circuit is used for detecting overvoltage, overcurrent and/or misleading fault signals of the IGBT, and feeding the fault signals back to the driving chip U1, so that the driving chip U1 outputs control signals to protect the IGBT. According to the invention, the basic active clamping circuit is adopted to prevent the IGBT from overvoltage, the overcurrent detection circuit and the soft turn-off circuit are adopted to prevent the IGBT from overcurrent and short circuit, the miller clamping circuit is adopted to prevent misleading after the IGBT is turned off, multiple protection functions are provided for the IGBT, the IGBT is not damaged when the fault occurs, and the reliability is improved.

Description

IGBT driving circuit
Technical Field
The invention relates to the technical field of electronic circuits, in particular to an IGBT driving circuit.
Background
When faults such as overvoltage, overcurrent, short circuit, mis-conduction and the like are extremely easy to occur in the running process of the IGBT and the driving circuit has no corresponding hardware protection function, the system cannot realize effective protection of the IGBT, so that the circuit is burnt. In the current practical application, various IGBT driving module circuits have limitations. The IGBT driving chip with low cost and small volume can not cover all the protection functions, and the IGBT driving chip with the comprehensive protection function generally has the defects of complex realization, large volume, high cost and the like.
Disclosure of Invention
In view of the analysis, the invention aims to provide an IGBT driving circuit, solve the problem of quick and accurate response of the driving circuit to the IGBT fault state, and realize protection of IGBT devices.
The aim of the invention is mainly realized by the following technical scheme:
an IGBT driving circuit comprises a driving chip U1 and a protection circuit;
the driving chip U1 is ACPL-339J and is used for driving the IGBT according to the input high-frequency pulse modulation signal;
the protection circuit is used for detecting overvoltage, overcurrent and/or misleading fault signals of the IGBT, feeding the overvoltage, overcurrent and/or misleading fault signals back to the driving chip U1, and enabling the driving chip U1 to output control signals to protect the IGBT.
Further, the protection circuit comprises a basic active clamping circuit for judging whether overvoltage faults occur or not by detecting whether the collector potential of the IGBT exceeds a set clamping threshold; and when the current value exceeds the set clamping threshold, the active clamping circuit lifts the gate potential of the IGBT, reduces the collector potential of the IGBT and protects the IGBT.
Further, the active clamp circuit comprises a fast recovery diode D3, a zener diode D2, resistors R2, R7 and an N-channel MOSFET T1;
the cathode of the Zener diode D2 is connected with the collector of the IGBT, and the anode of the Zener diode D3 is connected with the anode of the fast recovery diode;
the cathode of the fast recovery diode D3 is connected with the gate of the IGBT and is connected with the drain of the N-channel MOSFET T1 through a resistor R2;
the source electrode of the N-channel MOSFET T1 is connected with the 9 pin of the driving chip U1, and the grid electrode is connected with the 11 pin of the driving chip U1 through a resistor R7.
Further, the protection circuit comprises an overcurrent detection circuit which is connected with the 15 th pin of the driving chip U1 and the collector electrode of the IGBT; and the device is used for monitoring the collector voltage of the IGBT, and when the collector voltage exceeds an overcurrent detection threshold, feeding back a signal to a 14 th pin of the driving chip to trigger a soft turn-off circuit of the driving circuit to carry out soft turn-off on the IGBT.
Further, the overcurrent detection circuit comprises a fast recovery diode D1 and a resistor R1;
and the cathode of the fast recovery diode D1 is connected with the collector of the IGBT, and the anode of the fast recovery diode D is connected with the 15 th pin of the driving chip U1 through a resistor R1.
Further, the soft-off circuit comprises resistors R8, R9 and an N-channel MOSFET T3;
the resistor R8 is connected between the gate electrode of the IGBT and the drain electrode of the N-channel MOSFET T3;
the grid electrode of the N-channel MOSFET tube T3 is connected with the 14 pin of the driving chip U1 through a resistor R9, and the source electrode is connected with a-5V power supply.
Further, the resistor R9, the fast recovery diode D4 and the N-channel MOSFET T4 form a miller clamp circuit for preventing the wrong conduction of the IGBT caused by the miller effect.
The anode of the fast recovery diode D4 is connected with the gate of the IGBT, and the cathode of the fast recovery diode D is connected with the drain of the N-channel MOSFET T4;
the grid electrode of the N-channel MOSFET tube T3 is connected with the 14 pin of the driving chip U1 through a resistor R9, and the source electrode is connected with a-5V power supply.
Further, the IGBT on-state control circuit is used for controlling the on-state of the IGBT and comprises resistors R6 and R7 and a P-channel MOSFET T2;
the resistor R6 is connected between the gate electrode of the IGBT and the source electrode of the P-channel MOSFET T2;
the drain electrode of the P-channel MOSFET T2 is connected with the 13 pin of the driving chip U1, and the grid electrode of the P-channel MOSFET T2 is connected with the 12 pin of the driving chip U1 through a resistor R5.
Further, the N-channel MOSFET tube T1 and the P-channel MOSFET tube T2 are two-way MOSFET tubes in the chip IRF 7343; the 1 pin of the chip IRF7343 is connected with the 9 pin of the driving chip U1; the pin 2 of the chip IRF7343 is connected with the pin 11 of the driving chip U1 through a resistor R7; the 3 pin of the chip IRF7343 is connected with the 13 pin of the driving chip U1; the 4 pin of the chip IRF7343 is connected with the 12 pin of the driving chip U1 through a resistor R5; the 5 pin and the 6 pin of the chip IRF7343 are connected with the gate electrode of the IGBT through a resistor R6; the 7 pin and the 8 pin of the chip IRF7343 are connected to the gate of the IGBT through a resistor R2.
Further, the N-channel MOSFET tube T3 and the N-channel MOSFET tube T3 are two-way MOSFET tubes in the chip BSO 615N; the 1 pin of the chip BSO615N is connected with-5V; the 2 pin of the chip BSO615N is connected with the 14 pin of the driving chip U1 through a resistor R9; the 3 pin of the chip BSO615N is connected with-5V; the 4 pin of the chip BSO615N is connected with the 14 pin of the driving chip U1 through a resistor R9; the 5 pin and the 6 pin of the chip BSO615N are connected with the gate electrode of the IGBT through a fast recovery diode D4; the 7 pin and the 8 pin of the chip BSO615N are connected with the gate electrode of the IGBT through a resistor R8.
The invention has the following beneficial effects:
the IGBT driving circuit adopts the basic active clamping circuit to prevent the IGBT from overvoltage, adopts the overcurrent detection circuit and the soft turn-off circuit to prevent the IGBT from overcurrent and short circuit, adopts the miller clamping circuit to prevent misleading after the IGBT is turned off, provides multiple protection functions for the IGBT, prevents the IGBT from being damaged when the IGBT breaks down, and improves the reliability. The IGBT driving circuit solves the problems of low cost, high reliability and high integration.
Drawings
The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention, like reference numerals being used to refer to like parts throughout the several views.
Fig. 1 is a schematic diagram of an IGBT driving circuit according to an embodiment of the present invention.
Detailed Description
Preferred embodiments of the present invention are described in detail below with reference to the attached drawing figures, which form a part of the present application and, together with the embodiments of the present invention, serve to explain the principles of the invention.
The embodiment discloses an IGBT driving circuit, which is shown in fig. 1 and comprises a driving chip U1, a protection circuit and a conduction control circuit;
the driving chip U1 is ACPL-339J and is used for driving the IGBT according to the input high-frequency pulse modulation signal;
the protection circuit is used for detecting overvoltage, overcurrent and/or misleading fault signals of the IGBT and feeding the overvoltage, overcurrent and/or misleading fault signals back to the driving chip U1, and the driving chip U1 outputs control signals to protect the IGBT.
Specifically, the on control circuit is used for controlling the on of the IGBT and comprises resistors R6 and R7 and a P-channel MOSFET T2;
the resistor R6 is connected between the gate electrode of the IGBT and the source electrode of the P-channel MOSFET T2;
the drain electrode of the P-channel MOSFET T2 is connected with the 13 pin of the driving chip U1, and the grid electrode of the P-channel MOSFET T2 is connected with the 12 pin of the driving chip U1 through a resistor R5.
When the PWM signal connected with the 3 pin of the driving chip U1 through the resistor R3 is in a high level, namely, when the IGBT is controlled to be conducted, the 13 pin of the driving chip U1 outputs +15V, the 12 pin outputs a low level, the P-channel MOSFET T2 is conducted, and +15V is added to the gate electrode of the IGBT through the resistor R6, so that the IGBT is conducted.
Specifically, the protection circuit comprises a basic active clamp circuit, an overcurrent detection circuit, a soft shutdown circuit and a miller clamp circuit;
the active clamping circuit is used for judging whether overvoltage faults occur or not by detecting whether the collector potential of the IGBT exceeds a set clamping threshold; and when the current value exceeds the set clamping threshold, the active clamping circuit lifts the gate potential of the IGBT, reduces the collector potential of the IGBT and protects the IGBT.
Specifically, the active clamp circuit includes a fast recovery diode D3, a zener diode D2, resistors R2, R7, and an N-channel MOSFET T1;
the cathode of the Zener diode D2 is connected with the collector of the IGBT, and the anode of the Zener diode D3 is connected with the anode of the fast recovery diode;
the cathode of the fast recovery diode D3 is connected with the gate of the IGBT and is connected with the drain of the N-channel MOSFET T1 through a resistor R2;
the source electrode of the N-channel MOSFET T1 is connected with the 9 pin of the driving chip U1, and the grid electrode is connected with the 11 pin of the driving chip U1 through a resistor R7.
When the high-frequency pulse modulation signal sent by the upper-stage circuit is changed into a low level, the driving chip U1 controls the IGBT to start to turn off, the output of pins 11 and 12 of the driving chip U1 is changed into a high level, the pin 11 of the driving chip U1 is changed into a high level, the N-channel MOSFET T1 is conducted, and the resistor R2 is connected with the pin 9 (-5V power supply) of the driving chip U1 through the conducted T1; the 12 pin of the driving chip U1 is at a high level, so that the P-channel MOSFET T2 is turned off, the output is in a high-resistance state, the gate potential of the IGBT begins to drop, and the IGBT begins to turn off.
If the turn-off speed is too high, the IGBT collector will have voltage rise due to current change, and when the voltage exceeds the designed threshold voltage, the zener diode D2 will break down; the current generated by breakdown flows into the gate of the IGBT through the zener diode D2 and the fast recovery diode D3, and forms a closed loop through the resistor R2 and the conducted power supply from T1 to-5V, and the potential of the gate of the IGBT is raised, so that the turn-off speed of the IGBT is restrained, further the collector voltage of the IGBT is clamped, and the phenomenon that the IGBT is damaged due to overvoltage is prevented.
The clamping threshold is the reverse breakdown voltage of the zener diode D2.
The overcurrent detection circuit is connected with the 15 th pin of the driving chip U1 and the collector electrode of the IGBT; and the device is used for monitoring the collector voltage of the IGBT, and when the collector voltage exceeds an overcurrent detection threshold, feeding back a signal to a 14 th pin of the driving chip to trigger a soft turn-off circuit of the driving circuit to carry out soft turn-off on the IGBT.
Specifically, the overcurrent detection circuit comprises a zener diode D1 and a resistor R1;
and the cathode of the fast recovery diode D1 is connected with the collector of the IGBT, and the anode of the fast recovery diode D is connected with the 15 th pin of the driving chip U1 through a resistor R1.
Specifically, the soft-off circuit comprises resistors R8, R9 and an N-channel MOSFET T3;
the resistor R8 is connected between the gate electrode of the IGBT and the drain electrode of the N-channel MOSFET T3;
the grid electrode of the N-channel MOSFET tube T3 is connected with the 14 pin of the driving chip U1 through a resistor R9, and the source electrode is connected with a-5V power supply.
When the IGBT is conducted, the fast recovery diode D1 is reversely connected to the IGBT collector to monitor the IGBT collector voltage;
when overcurrent or short-circuit fault occurs, the IGBT collector voltage is boosted to breakdown the fast recovery diode D1, the current generated by breakdown is output to the 15 th pin of the driving chip U1 through the fast recovery diode D1 and the resistor R1, and the driving chip U1 monitors an overcurrent fault signal; when an overcurrent fault signal is detected, a soft-off function is started, a 15 th pin of the driving chip U1 outputs a high level, an N-channel MOSFET T3 of the soft-off circuit is conducted, a-5V power supply is added to a gate electrode of the IGBT through a resistor R9, the conducted T3 and a resistor R8, and the IGBT is turned off in a soft mode; playing a role in protection.
The resistor R9, the fast recovery diode D4 and the N-channel MOSFET T4 form a Miller clamp circuit;
specifically, the anode of the fast recovery diode D4 is connected with the gate of the IGBT, and the cathode is connected with the drain of the N-channel MOSFET T4;
the grid electrode of the N-channel MOSFET tube T4 is connected with the 14 pin of the driving chip U1 through a resistor R9, and the source electrode is connected with a-5V power supply.
The miller clamp circuit is used for preventing the IGBT from being turned on by mistake caused by the miller effect when the IGBT is turned off in a soft mode.
When the IGBT is turned off, the 15 th pin of the driving chip U1 outputs high level, so that an N-channel MOSFET T4 of the Miller clamp circuit is conducted, and a-5V power supply is added to the gate electrode of the IGBT through the conducted T4 and a fast recovery diode D4;
when the miller effect occurs due to the severe voltage change of the IGBT collector, the generated miller current flows into a negative power supply through the conducted N-channel MOSFET T4 and the fast recovery diode D4, so that the voltage of the IGBT gate electrode is stable, and misleading of the IGBT is prevented.
In order to achieve miniaturization of the circuit and to improve reliability of the circuit, the present embodiment preferably employs an integrated dual MOSFET integrated chip.
Specifically, the N-channel MOSFET T1 and the P-channel MOSFET T2 adopt two-way MOSFET in the chip IRF 7343;
the N-channel MOSFET transistor T3 and the N-channel MOSFET transistor T3 are two-way MOSFET transistors in the chip BSO 615N.
The specific connection mode is as follows:
the 1 pin of the chip IRF7343 is connected with the 9 pin of the driving chip U1; the pin 2 of the chip IRF7343 is connected with the pin 11 of the driving chip U1 through a resistor R7; the 3 pin of the chip IRF7343 is connected with the 13 pin of the driving chip U1; the 4 pin of the chip IRF7343 is connected with the 12 pin of the driving chip U1 through a resistor R5; the 5 pin and the 6 pin of the chip IRF7343 are connected with the gate electrode of the IGBT through a resistor R6; the 7 pin and the 8 pin of the chip IRF7343 are connected with the gate electrode of the IGBT through a resistor R2;
the 1 pin of the chip BSO615N is connected with-5V; the 2 pin of the chip BSO615N is connected with the 14 pin of the driving chip U1 through a resistor R9; the 3 pin of the chip BSO615N is connected with-5V; the 4 pin of the chip BSO615N is connected with the 14 pin of the driving chip U1 through a resistor R9; the 5 pin and the 6 pin of the chip BSO615N are connected with the gate electrode of the IGBT through a fast recovery diode D4; the 7 pin and the 8 pin of the chip BSO615N are connected with the gate electrode of the IGBT through a resistor R8.
In order to realize better IGBT driving and protection, in fig. 1, the types of components are as follows:
the chip model adopted by U1 is ACPL-399J, U2 is IRF7343, U3 is BSO615N, D1, D3 and D4 are ES1J, and D2 is SMCJ440A; the resistance of R1 is 1000 omega, R2, R5, R7 and R9 are 10 omega, R3 is 324 omega, R4 is 107 omega, R6 is 5 omega and R8 is 133 omega.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention.

Claims (9)

1. An IGBT driving circuit is characterized by comprising a driving chip U1 and a protection circuit;
the driving chip U1 is ACPL-339J and is used for driving the IGBT according to the input high-frequency pulse modulation signal;
the protection circuit is used for detecting overvoltage, overcurrent and/or misleading fault signals of the IGBT, feeding the overvoltage, overcurrent and/or misleading fault signals back to the driving chip U1, and enabling the driving chip U1 to output control signals to protect the IGBT;
the miller clamp circuit is formed by a resistor R9, a fast recovery diode D4 and an N-channel MOSFET T4;
the anode of the fast recovery diode D4 is connected with the gate of the IGBT, and the cathode of the fast recovery diode D is connected with the drain of the N-channel MOSFET T4;
the grid electrode of the N-channel MOSFET T4 is connected with the 14 pin of the driving chip U1 through a resistor R9, and the source electrode is connected with a-5V power supply;
the miller clamp circuit is used for preventing the error conduction of the IGBT caused by the miller effect when the IGBT is turned off in a soft mode;
when the IGBT is turned off, the 15 th pin of the driving chip U1 outputs high level, so that an N-channel MOSFET T4 of the Miller clamp circuit is conducted, and a-5V power supply is added to the gate electrode of the IGBT through the conducted T4 and a fast recovery diode D4;
when the miller effect occurs due to the severe voltage change of the IGBT collector, the generated miller current flows into a negative power supply through the conducted N-channel MOSFET T4 and the fast recovery diode D4, so that the voltage of the IGBT gate electrode is stable, and misleading of the IGBT is prevented.
2. The IGBT driving circuit according to claim 1, wherein the protection circuit includes a basic active clamp circuit for determining whether an overvoltage fault occurs by detecting whether a collector potential of the IGBT exceeds a set clamp threshold; and when the current value exceeds the set clamping threshold, the active clamping circuit lifts the gate potential of the IGBT, reduces the collector potential of the IGBT and protects the IGBT.
3. The IGBT driver circuit according to claim 2, wherein the active clamp circuit includes a fast recovery diode D3, a zener diode D2, resistors R2, R7, and an N-channel MOSFET tube T1;
the cathode of the Zener diode D2 is connected with the collector of the IGBT, and the anode of the Zener diode D3 is connected with the anode of the fast recovery diode;
the cathode of the fast recovery diode D3 is connected with the gate of the IGBT and is connected with the drain of the N-channel MOSFET T1 through a resistor R2;
the source electrode of the N-channel MOSFET T1 is connected with the 9 pin of the driving chip U1, and the grid electrode is connected with the 11 pin of the driving chip U1 through a resistor R7.
4. The IGBT driving circuit according to claim 1, wherein the protection circuit includes an overcurrent detection circuit connected between the 15 th pin of the driving chip U1 and the collector of the IGBT; and the device is used for monitoring the collector voltage of the IGBT, and when the collector voltage exceeds an overcurrent detection threshold, feeding back a signal to a 14 th pin of the driving chip to trigger a soft turn-off circuit of the driving circuit to carry out soft turn-off on the IGBT.
5. The IGBT driving circuit according to claim 4, wherein the overcurrent detecting circuit includes a fast recovery diode D1 and a resistor R1;
and the cathode of the fast recovery diode D1 is connected with the collector of the IGBT, and the anode of the fast recovery diode D is connected with the 15 th pin of the driving chip U1 through a resistor R1.
6. The IGBT drive circuit according to claim 5, characterized in that the soft-off circuit comprises resistors R8, R9 and N-channel MOSFET tube T3;
the resistor R8 is connected between the gate electrode of the IGBT and the drain electrode of the N-channel MOSFET T3;
the grid electrode of the N-channel MOSFET tube T3 is connected with the 14 pin of the driving chip U1 through a resistor R9, and the source electrode is connected with a-5V power supply.
7. The IGBT driving circuit according to claim 5, further comprising an IGBT turn-on control circuit for controlling the IGBT turn-on, including resistors R6, R7 and P-channel MOSFET tube T2;
the resistor R6 is connected between the gate electrode of the IGBT and the source electrode of the P-channel MOSFET T2;
the drain electrode of the P-channel MOSFET T2 is connected with the 13 pin of the driving chip U1, and the grid electrode of the P-channel MOSFET T2 is connected with the 12 pin of the driving chip U1 through a resistor R5.
8. The IGBT driver circuit of claim 5, wherein the N channel MOSFET T1 and the P channel MOSFET T2 are two-way MOSFET transistors in the chip IRF 7343; the 1 pin of the chip IRF7343 is connected with the 9 pin of the driving chip U1; the pin 2 of the chip IRF7343 is connected with the pin 11 of the driving chip U1 through a resistor R7; the 3 pin of the chip IRF7343 is connected with the 13 pin of the driving chip U1; the 4 pin of the chip IRF7343 is connected with the 12 pin of the driving chip U1 through a resistor R5; the 5 pin and the 6 pin of the chip IRF7343 are connected with the gate electrode of the IGBT through a resistor R6; the 7 pin and the 8 pin of the chip IRF7343 are connected to the gate of the IGBT through a resistor R2.
9. The IGBT driver circuit of claim 5, wherein the N channel MOSFET transistor T3 and the N channel MOSFET transistor T3 are two-way MOSFET transistors in the chip BSO 615N; the 1 pin of the chip BSO615N is connected with-5V; the 2 pin of the chip BSO615N is connected with the 14 pin of the driving chip U1 through a resistor R9; the 3 pin of the chip BSO615N is connected with-5V; the 4 pin of the chip BSO615N is connected with the 14 pin of the driving chip U1 through a resistor R9; the 5 pin and the 6 pin of the chip BSO615N are connected with the gate electrode of the IGBT through a fast recovery diode D4; the 7 pin and the 8 pin of the chip BSO615N are connected with the gate electrode of the IGBT through a resistor R8.
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