CN110266297A - A kind of IGBT drive circuit - Google Patents
A kind of IGBT drive circuit Download PDFInfo
- Publication number
- CN110266297A CN110266297A CN201910551781.6A CN201910551781A CN110266297A CN 110266297 A CN110266297 A CN 110266297A CN 201910551781 A CN201910551781 A CN 201910551781A CN 110266297 A CN110266297 A CN 110266297A
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- igbt
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- resistance
- driving chip
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
The present invention relates to the driving circuits of IGBT a kind of, belong to electronic circuit technology field, solve the problems, such as that driving circuit is quick to malfunction, accurate response, protect IGBT；Circuit includes driving chip U1 and protection circuit；Driving chip U1 is ACPL-339J, drives IGBT according to the high-frequency impulse modulated signal of input；Protection circuit is used to detect the overvoltage, overcurrent and/or the fault-signal that misleads of IGBT, and feedback arrives the driving chip U1, protects the driving chip U1 output control signal to IGBT.The present invention prevents IGBT overvoltage by using basic active clamp circuit; IGBT overcurrent and short circuit can be prevented using over-current detection circuit and soft breaking circuit; misleading after IGBT soft switching is prevented using Miller clamp circuit; multiple protection functions are provided for IGBT; make break down when IGBT it is not damaged, improve reliability.
Description
Technical field
The present invention relates in electronic circuit technology field, especially a kind of IGBT drive circuit.
Background technique
It is not corresponding that over-voltage, overcurrent, short circuit, the failures such as mislead and driving circuit easily occurs in the process of running in IGBT
Hardware protection function when, system will be unable to realize the effective protection to IGBT so as to cause circuit is burnt.In current reality
In, a variety of IGBT drive module circuits all have its limitation.IGBT driving chip at low cost, small in size can not capsule
All of above defencive function is included, the IGBT driving chip for having comprehensive defencive function, which usually has, realizes that complicated, volume is big, cost
The disadvantages of high.
Summary of the invention
In view of above-mentioned analysis, the present invention is intended to provide a kind of IGBT drive circuit, solves driving circuit to IGBT failure
State quick and precisely response problem realizes the protection to IGBT device.
The purpose of the present invention is mainly achieved through the following technical solutions:
A kind of IGBT drive circuit, including driving chip U1 and protection circuit；
The driving chip U1 is ACPL-339J, for driving IGBT according to the high-frequency impulse modulated signal of input；
The protection circuit, for detecting the overvoltage, overcurrent and/or the fault-signal that misleads of IGBT, feedback arrives institute
Driving chip U1 is stated, protects the driving chip U1 output control signal to IGBT.
Further, the protection circuit includes basic active clamp circuit, for the collector electricity by detection IGBT
Whether position is more than setting clamper thresholding to determine whether overvoltage failure occurs；It is described active when being more than setting clamper thresholding
Clamp circuit is lifted IGBT gate potentials, reduces the collector potential of IGBT, protects IGBT.
Further, the active clamp circuit includes fast recovery diode D3, Zener diode D2, resistance R2, R7 and N
Channel mosfet pipe T1；
The cathode of the Zener diode D2 and the collector of IGBT connect, and the anode of anode and fast recovery diode D3 connect
It connects；
The cathode of fast recovery diode D3 and the gate pole of IGBT connect, and pass through resistance R2's and N-channel MOS FET pipe T1
Drain electrode connection；
The source electrode of the N-channel MOS FET pipe T1 is connect with 9 feet of driving chip U1, and grid passes through resistance R7 and driving core
11 feet of piece U1 connect.
Further, the protection circuit includes over-current detection circuit, is connected to the 15th foot and IGBT of driving chip U1
Collector；For monitoring IGBT collector voltage, when collector voltage is more than over-current detection thresholding, feedback signal to driving
The 14th pin of chip, triggers the soft breaking circuit of driving circuit, carries out soft switching to IGBT.
Further, the over-current detection circuit includes fast recovery diode D1 and resistance R1；
The fast recovery diode D1 cathode connects IGBT collector, and anode passes through resistance R1 connection driving chip U1 the 15th
Pin.
Further, the soft breaking circuit includes resistance R8, R9 and N-channel MOS FET pipe T3；
Between resistance R8 connection IGBT gate pole and the drain electrode of N-channel MOS FET pipe T3；
The grid of N-channel MOS FET pipe T3 is connect by resistance R9 with 14 feet of driving chip U1, and source electrode and -5V power supply connect
It connects.
Further, the resistance R9, fast recovery diode D4 and N-channel MOS FET pipe T4 constitute Miller clamp circuit,
IGBT caused by for preventing because of the Miller effect misleads.
The anode of the fast recovery diode D4 connects IGBT gate pole, between cathode and the drain electrode of N-channel MOS FET pipe T4；
The grid of N-channel MOS FET pipe T3 is connect by resistance R9 with 14 feet of driving chip U1, and source electrode and -5V power supply connect
It connects.
It further, further include IGBT turn-on control circuit, for controlling IGBT conducting, including resistance R6, R7 and P-channel
MOSFET pipe T2；
The resistance R6 is connected between the gate pole of IGBT and the source electrode of P-channel MOSFET pipe T2；
The drain electrode of P-channel MOSFET pipe T2 is connect with 13 feet of driving chip U1, and the grid of P-channel MOSFET pipe T2 passes through
Resistance R5 is connect with 12 feet of driving chip U1.
Further, N-channel MOS FET pipe T1 and P-channel MOSFET pipe T2 is the two-way MOSFET in chip I RF7343
Pipe；1 foot of chip I RF7343 is connect with 9 feet of driving chip U1；2 feet of chip I RF7343 pass through resistance R7 and driving chip
11 feet of U1 connect；3 feet of chip I RF7343 are connect with 13 feet of driving chip U1；4 feet of chip I RF7343 pass through resistance
R5 is connect with 12 feet of driving chip U1；5 feet and 6 feet of chip I RF7343 are connected by the gate pole of resistance R6 and IGBT；Chip
7 feet and 8 feet of IRF7343 are connected by the gate pole of resistance R2 and IGBT.
Further, N-channel MOS FET pipe T3 and N-channel MOS FET pipe T3 is the two-way MOSFET in chip BSO615N
Pipe；1 foot of chip BSO615N is connect with -5V；2 feet of chip BSO615N are connected by 14 feet of resistance R9 and driving chip U1
It connects；3 feet of chip BSO615N are connect with -5V；4 feet of chip BSO615N are connected by 14 feet of resistance R9 and driving chip U1
It connects；5 feet and 6 feet of chip BSO615N are connected by the gate pole of fast recovery diode D4 and IGBT；7 feet of chip BSO615N and
8 feet are connected by the gate pole of resistance R8 and IGBT.
The present invention has the beneficial effect that:
IGBT drive circuit of the invention prevents IGBT overvoltage using basic active clamp circuit, using over-current detection electricity
Road and soft breaking circuit can prevent IGBT overcurrent and short circuit, the misleading after IGBT soft switching is prevented using Miller clamp circuit
It is logical, multiple protection functions are provided for IGBT, make in failure that IGBT is not damaged, improve reliability.IGBT is solved to drive
Low cost, high reliability and the highly integrated property problem of dynamic circuit.
Detailed description of the invention
Attached drawing is only used for showing the purpose of specific embodiment, and is not to be construed as limiting the invention, in entire attached drawing
In, identical reference symbol indicates identical component.
Fig. 1 is the IGBT drive circuit schematic diagram of the embodiment of the present invention.
Specific embodiment
Specifically describing the preferred embodiment of the present invention with reference to the accompanying drawing, wherein attached drawing constitutes the application a part, and
Together with embodiments of the present invention for illustrating the principle of the present invention.
Present embodiment discloses a kind of IGBT drive circuits, as shown in Figure 1, including driving chip U1, protecting circuit and lead
Logical control circuit；
The driving chip U1 is ACPL-339J, for driving IGBT according to the high-frequency impulse modulated signal of input；
The protection circuit, for detecting the overvoltage, overcurrent and/or the fault-signal that misleads of IGBT, feedback arrives institute
Driving chip U1 is stated, the driving chip U1 output control signal protects IGBT.
Specifically, turn-on control circuit, for controlling IGBT conducting, including resistance R6, R7 and P-channel MOSFET pipe T2；
The resistance R6 is connected between the gate pole of IGBT and the source electrode of P-channel MOSFET pipe T2；
The drain electrode of P-channel MOSFET pipe T2 is connect with 13 feet of driving chip U1, and the grid of P-channel MOSFET pipe T2 passes through
Resistance R5 is connect with 12 feet of driving chip U1.
When the pwm signal connecting by resistance R3 with 3 feet of driving chip U1 is high level, i.e. control IGBT conducting
When, the 13 foot output+15V of driving chip U1,12 feet export low level, and P-channel MOSFET pipe T2 is connected, and+15V passes through resistance
R6 is added to the gate pole of IGBT, and IGBT is connected.
Specifically, protection circuit includes basic active clamp circuit, over-current detection circuit, soft breaking circuit and Miller clamper
Circuit；
Wherein, active clamp circuit, for by detect IGBT collector potential whether be more than setting clamper thresholding come
Judge whether that overvoltage failure occurs；When being more than setting clamper thresholding, the active clamp circuit is lifted IGBT gate potentials,
The collector potential of IGBT is reduced, IGBT is protected.
Specifically, the active clamp circuit includes fast recovery diode D3, Zener diode D2, resistance R2, R7 and N ditch
Road MOSFET pipe T1；
The cathode of the Zener diode D2 and the collector of IGBT connect, and the anode of anode and fast recovery diode D3 connect
It connects；
The cathode of fast recovery diode D3 and the gate pole of IGBT connect, and pass through resistance R2's and N-channel MOS FET pipe T1
Drain electrode connection；
The source electrode of the N-channel MOS FET pipe T1 is connect with 9 feet of driving chip U1, and grid passes through resistance R7 and driving core
11 feet of piece U1 connect.
When the high-frequency impulse modulated signal that upper level circuit is sent becomes low level, driving chip U1 control IGBT starts
When shutdown, 11, the 12 feet output of driving chip U1 becomes high level, and 11 feet of driving chip U1 are high level, makes N-channel
MOSFET pipe T1 conducting, 9 feet (- 5V power supply) that resistance R2 passes through the T1 connection driving chip U1 of conducting；The 12 of driving chip U1
Foot is high level, ends P-channel MOSFET pipe T2, is exported as high-impedance state, and IGBT gate potentials are begun to decline, and IGBT starts
Shutdown.
At this time if turn-off speed is too fast, IGBT collector voltage lifting can acutely occur because of curent change, when the voltage
More than the threshold voltage of design, Zener diode D2 will be punctured；The electric current that breakdown generates passes through Zener diode D2, restores two fastly
Pole pipe D3 flows into IGBT gate pole, and by resistance R2, the T1 to -5V power supply of conducting, forms closed circuit, IGBT gate potentials obtain
With lifting, to inhibit the turn-off speed of IGBT, and then clamper is formed to the collector voltage of IGBT, prevent overvoltage
To damage IGBT.
The clamper thresholding is the breakdown reverse voltage of the Zener diode D2.
Wherein, over-current detection circuit is connected to the collector of the 15th foot and IGBT of driving chip U1；For monitoring IGBT
Collector voltage, when collector voltage is more than over-current detection thresholding, feedback signal to the 14th pin of driving chip, triggering driving
The soft breaking circuit of circuit carries out soft switching to IGBT.
Specifically, the over-current detection circuit includes Zener diode D1 and resistance R1；
The fast recovery diode D1 cathode connects IGBT collector, and anode passes through resistance R1 connection driving chip U1 the 15th
Pin.
Specifically, the soft breaking circuit includes resistance R8, R9, N-channel MOS FET pipe T3；
Between resistance R8 connection IGBT gate pole and the drain electrode of N-channel MOS FET pipe T3；
The grid of N-channel MOS FET pipe T3 is connect by resistance R9 with 14 feet of driving chip U1, and source electrode and -5V power supply connect
It connects.
In IGBT conducting, the fast recovery diode D1 reversal connection monitors IGBT collector voltage in IGBT collector；
When overcurrent or short trouble occurs, IGBT collector voltage boosting breakdown fast recovery diode D1, breakdown is generated
Electric current the 15th pin of driving chip U1 is output to by fast recovery diode D1 and resistance R1, driving chip U1 monitors overcurrent
Fault-signal；When monitoring over current fault signal, starting soft turn-off function, the 15th pin of driving chip U1 exports high level,
The N-channel MOS FET pipe T3 of soft breaking circuit is connected, -5V power supply is added to IGBT's by resistance R9, the T3 of conducting, resistance R8
Gate pole makes IGBT soft switching；It plays a protective role.
Also, the resistance R9, fast recovery diode D4 and N-channel MOS FET pipe T4 constitute Miller clamp circuit；
Specifically, the anode of the fast recovery diode D4 connects IGBT gate pole, the leakage of cathode and N-channel MOS FET pipe T4
Between pole；
The grid of N-channel MOS FET pipe T3 is connect by resistance R9 with 14 feet of driving chip U1, and source electrode and -5V power supply connect
It connects.
Miller clamp circuit misleads for IGBT caused by preventing from because of the Miller effect in IGBT soft switching.
When IGBT soft switching, the 15th pin of driving chip U1 exports high level, makes the N-channel of Miller clamp circuit
MOSFET pipe T4 conducting, -5V power supply are added to the gate pole of IGBT by resistance R9, the T3 of conducting, fast recovery diode D4；
When there is the Miller effect because of voltage acute variation due to IGBT collector, the Miller electric current of generation will pass through conducting
N-channel MOS FET pipe T4, fast recovery diode D4 and R9 flow into negative supply, make IGBT gate voltage stablize, prevent to IGBT
Mislead.
For the miniaturization for realizing circuit, and the reliability of promotion circuit, the present embodiment is preferably using integrated pair
MOSFET pipe integrated chip.
Specifically, N-channel MOS FET pipe T1 and P-channel MOSFET pipe T2 is using the two-way MOSFET in chip I RF7343
Pipe；
N-channel MOS FET pipe T3 and N-channel MOS FET pipe T3 is the two-way MOSFET pipe in chip BSO615N.
Specific connection type are as follows:
1 foot of chip I RF7343 is connect with 9 feet of driving chip U1；2 feet of chip I RF7343 are by resistance R7 and drive
The 11 feet connection of dynamic chip U1；3 feet of chip I RF7343 are connect with 13 feet of driving chip U1；4 feet of chip I RF7343 are logical
Resistance R5 is crossed to connect with 12 feet of driving chip U1；5 feet and 6 feet of chip I RF7343 are connected by the gate pole of resistance R6 and IGBT
It connects；7 feet and 8 feet of chip I RF7343 are connected by the gate pole of resistance R2 and IGBT；
1 foot of chip BSO615N is connect with -5V；2 feet of chip BSO615N pass through the 14 of resistance R9 and driving chip U1
Foot connection；3 feet of chip BSO615N are connect with -5V；4 feet of chip BSO615N pass through 14 feet of resistance R9 and driving chip U1
Connection；5 feet and 6 feet of chip BSO615N are connected by the gate pole of fast recovery diode D4 and IGBT；7 feet of chip BSO615N
It is connected with 8 feet by the gate pole of resistance R8 and IGBT.
In order to realize more preferably IGBT driving and protection, in Fig. 1, the type selecting of component is as follows:
Chip model used by U1 is ACPL-339J, and U2 IRF7343, U3 BSO615N, D1, D3, D4 are ES1J,
D2 is SMCJ440A；R1 resistance value is 1000 Ω, and R2, R5, R7, R9 are 10 Ω, and R3 is 324 Ω, and R4 is 107 Ω, and R6 is 5 Ω, R8
For 133 Ω.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by anyone skilled in the art,
It should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of IGBT drive circuit, which is characterized in that including driving chip U1 and protection circuit；
The driving chip U1 is ACPL-339J, for driving IGBT according to the high-frequency impulse modulated signal of input；
The protection circuit, for detecting the overvoltage, overcurrent and/or the fault-signal that misleads of IGBT, feedback arrives the drive
Dynamic chip U1 protects the driving chip U1 output control signal to IGBT.
2. IGBT drive circuit according to claim 1, which is characterized in that the protection circuit includes basic active clamp
Whether circuit is more than setting clamper thresholding to determine whether overvoltage event occurs for the collector potential by detection IGBT
Barrier；When being more than setting clamper thresholding, the active clamp circuit is lifted IGBT gate potentials, reduces the collector electricity of IGBT
IGBT is protected in position.
3. IGBT drive circuit according to claim 2, which is characterized in that the active clamp circuit includes fast recovery two
Pole pipe D3, Zener diode D2, resistance R2, R7 and N-channel MOS FET pipe T1；
The cathode of the Zener diode D2 and the collector of IGBT connect, and anode is connect with the anode of fast recovery diode D3；
The cathode of fast recovery diode D3 and the gate pole of IGBT connect, and pass through the drain electrode of resistance R2 and N-channel MOS FET pipe T1
Connection；
The source electrode of the N-channel MOS FET pipe T1 is connect with 9 feet of driving chip U1, and grid passes through resistance R7 and driving chip U1
11 feet connection.
4. IGBT drive circuit according to claim 1, which is characterized in that the protection circuit includes over-current detection electricity
Road is connected to the collector of the 15th foot and IGBT of driving chip U1；For monitoring IGBT collector voltage, work as collector voltage
When more than over-current detection thresholding, feedback signal triggers the soft breaking circuit of driving circuit, to IGBT to the 14th pin of driving chip
Carry out soft switching.
5. IGBT drive circuit according to claim 4, which is characterized in that the over-current detection circuit includes fast recovery two
Pole pipe D1 and resistance R1；
The fast recovery diode D1 cathode connects IGBT collector, and anode is managed by resistance R1 connection driving chip U1 the 15th
Foot.
6. IGBT drive circuit according to claim 5, which is characterized in that the soft breaking circuit includes resistance R8, R9
With N-channel MOS FET pipe T3；
Between resistance R8 connection IGBT gate pole and the drain electrode of N-channel MOS FET pipe T3；
The grid of N-channel MOS FET pipe T3 is connect by resistance R9 with 14 feet of driving chip U1, and source electrode is connect with -5V power supply.
7. IGBT drive circuit according to claim 1, which is characterized in that the resistance R9, fast recovery diode D4 and N
Channel mosfet pipe T4 constitute Miller clamp circuit, for preventing because of the Miller effect caused by IGBT mislead.
The anode of the fast recovery diode D4 connects IGBT gate pole, between cathode and the drain electrode of N-channel MOS FET pipe T4；
The grid of N-channel MOS FET pipe T3 is connect by resistance R9 with 14 feet of driving chip U1, and source electrode is connect with -5V power supply.
8. IGBT drive circuit according to claim 5, which is characterized in that further include IGBT turn-on control circuit, be used for
Control IGBT conducting, including resistance R6, R7 and P-channel MOSFET pipe T2；
The resistance R6 is connected between the gate pole of IGBT and the source electrode of P-channel MOSFET pipe T2；
The drain electrode of P-channel MOSFET pipe T2 is connect with 13 feet of driving chip U1, and the grid of P-channel MOSFET pipe T2 passes through resistance
R5 is connect with 12 feet of driving chip U1.
9. IGBT drive circuit according to claim 5, which is characterized in that N-channel MOS FET pipe T1 and P-channel MOSFET
Pipe T2 is the two-way MOSFET pipe in chip I RF7343；1 foot of chip I RF7343 is connect with 9 feet of driving chip U1；Chip
2 feet of IRF7343 are connect by resistance R7 with 11 feet of driving chip U1；3 feet of chip I RF7343 and the 13 of driving chip U1
Foot connection；4 feet of chip I RF7343 are connect by resistance R5 with 12 feet of driving chip U1；5 feet and 6 feet of chip I RF7343
It is connected by the gate pole of resistance R6 and IGBT；7 feet and 8 feet of chip I RF7343 are connected by the gate pole of resistance R2 and IGBT.
10. IGBT drive circuit according to claim 5, which is characterized in that N-channel MOS FET pipe T3 and N-channel
MOSFET pipe T3 is the two-way MOSFET pipe in chip BSO615N；1 foot of chip BSO615N is connect with -5V；Chip BSO615N
2 feet connect with 14 feet of driving chip U1 by resistance R9；3 feet of chip BSO615N are connect with -5V；Chip BSO615N's
4 feet are connect by resistance R9 with 14 feet of driving chip U1；5 feet and 6 feet of chip BSO615N by fast recovery diode D4 with
The gate pole of IGBT connects；7 feet and 8 feet of chip BSO615N are connected by the gate pole of resistance R8 and IGBT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910551781.6A CN110266297B (en) | 2019-06-24 | 2019-06-24 | IGBT driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910551781.6A CN110266297B (en) | 2019-06-24 | 2019-06-24 | IGBT driving circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110266297A true CN110266297A (en) | 2019-09-20 |
| CN110266297B CN110266297B (en) | 2023-07-25 |
Family
ID=67921173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910551781.6A Active CN110266297B (en) | 2019-06-24 | 2019-06-24 | IGBT driving circuit |
Country Status (1)
| Country | Link |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104935315A (en) * | 2015-07-15 | 2015-09-23 | 北京京东方能源科技有限公司 | Igbt drive circuit |
| CN105720802A (en) * | 2016-04-29 | 2016-06-29 | 航天长峰朝阳电源有限公司 | H bridge full-function IGBT isolation driving control module |
-
2019
- 2019-06-24 CN CN201910551781.6A patent/CN110266297B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104935315A (en) * | 2015-07-15 | 2015-09-23 | 北京京东方能源科技有限公司 | Igbt drive circuit |
| WO2017008441A1 (en) * | 2015-07-15 | 2017-01-19 | 京东方科技集团股份有限公司 | Insulated gate bipolar transistor (igbt) drive circuit |
| CN105720802A (en) * | 2016-04-29 | 2016-06-29 | 航天长峰朝阳电源有限公司 | H bridge full-function IGBT isolation driving control module |
Non-Patent Citations (3)
| Title |
|---|
| 周帅等: "大功率SiC-MOSFET模块驱动技术研究", 《机车电传动》 * |
| 王博等: "IGBT驱动关键技术研究", 《电子产品世界》 * |
| 马立新等: "基于2ED020I12-F2的IGBT驱动电路设计", 《电子科技》 * |
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| Publication number | Publication date |
|---|---|
| CN110266297B (en) | 2023-07-25 |
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