CN110265877A - A kind of space angle closes beam semiconductor laser and its preparation process and closes Shu Fangfa - Google Patents
A kind of space angle closes beam semiconductor laser and its preparation process and closes Shu Fangfa Download PDFInfo
- Publication number
- CN110265877A CN110265877A CN201910547540.4A CN201910547540A CN110265877A CN 110265877 A CN110265877 A CN 110265877A CN 201910547540 A CN201910547540 A CN 201910547540A CN 110265877 A CN110265877 A CN 110265877A
- Authority
- CN
- China
- Prior art keywords
- mirror
- laser
- space angle
- shell
- collimating mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4075—Beam steering
Abstract
Beam semiconductor laser and its preparation process are closed the present invention relates to a kind of space angle and close Shu Fangfa, it includes shell that space angle, which closes beam semiconductor laser, it is mounted at least one intracorporal Phase cooling enthusiasm of the shell and reflection microscope group, several laser chips being mounted in Phase cooling enthusiasm are equipped with collimation microscope group on the laser chip；The reflection microscope group in a straight line, is provided with coupling mirror between the optical fiber and reflection microscope group with the optical fiber being arranged on shell, and at least one set of inlet and outlet connecting with the Phase cooling enthusiasm is provided on shell.The invention discloses a kind of space angles to close beam semiconductor laser, can effectively improve continuous power output；The light cluster in space angle distribution is obtained by reflecting microscope group；The light cluster synthesis for being distributed space angle using coupling mirror is a branch of, and passes through optical fiber output.
Description
Technical field
The present invention relates to field of lasers, in particular to a kind of a kind of field of semiconductor lasers, and in particular to Space Angle
Degree closes Shu Fangfa and its semiconductor laser.
Background technique
Instantly the common semiconductor laser structure in this field mainly has: horizontal array column semiconductor laser, space are hung down
Straight semiconductor laser array, stack-up array formula semiconductor laser.
Horizontal array column semiconductor laser (patent of invention CN201510491665.1) has each chip temperature uniform, swashs
The advantages that light monochromaticjty is preferable, but the structure occupied space is big, is unfavorable for large-scale integrated.
Space step array formula semiconductor laser (patent of invention CN201610052020.2) have it is compact-sized, be convenient for
The advantages that succession, but since the laser uses step enthusiasm, cause each chip temperature to be unevenly distributed, laser monochromaticjty
Difference.And step enthusiasm is difficult to cooling duct, constrains spatial vertical semiconductor laser array and sends out to high powerization
Exhibition.
Stack-up array formula semiconductor laser (patent of invention CN201410846317.7) solves chip large-scale integrated
Problem improves laser intensity, but since the monomer enthusiasm used forms for Layered manufacturing post package, intensity is lower, causes
Advanced cooling technology cannot be used, therefore, the laser cooling effect is bad.The pulse way of output can only be used, it is continuous defeated
Power is still lower out.
And semiconductor laser is mainly used in the pumping source for injuring weapon or other types laser.Therefore, the company of raising
Continuous output power is most important for the development of semiconductor laser, be still this field research staff's urgent problem it
One.
Summary of the invention
The present invention overcomes the deficiencies in the prior art, provide a kind of space angle conjunction beam semiconductor laser, can effectively mention
High continuous power output；The light cluster in space angle distribution is obtained by reflecting microscope group；Space angle is distributed using coupling mirror
The synthesis of light cluster it is a branch of, and pass through optical fiber output.
In order to achieve the above objectives, the technical solution adopted by the present invention are as follows: a kind of space angle conjunction beam semiconductor laser, packet
Shell 1 is included, at least one the Phase cooling enthusiasm 2 and reflection microscope group 3 being mounted in the shell 1 are mounted on Phase cooling
Several laser chips 4 in enthusiasm 2 are equipped with collimation microscope group on the laser chip 4；The reflection microscope group 3 exists with setting
Optical fiber 8 on shell 1 in a straight line, is provided with coupling mirror 7 between the optical fiber 8 and reflection microscope group 3, and be arranged on shell 1
There are the import 11 and outlet 12 of at least one set of importing cooling air connecting with the Phase cooling enthusiasm 2.
In a preferred embodiment of the present invention, each collimation microscope group includes being mounted on each laser chip 4 extremely
Few a piece of FAC collimating mirror 5, and at least a piece of SAC collimating mirror 6 that corresponding each FAC collimating mirror 5 is arranged.
In a preferred embodiment of the present invention, reflection microscope group 3 reflects microscope group using array space angle, including more
The reflecting mirror 31 that piece is arranged in a linear and is parallel to each other, the every reflecting mirror 31 are vertically set in shell 1.
In a preferred embodiment of the present invention, the every laser chip 4 and corresponding FAC collimating mirror 5 and SAC collimating mirror
6 in a straight line, and the every reflecting mirror 31 light beam for being perforated through FAC collimating mirror 5 and SAC collimating mirror 6 is refracted to it is described
On coupling mirror 7.
In a preferred embodiment of the present invention, at least provided with a piece of FAC collimating mirror 5, every institute on every laser chip 4
The corresponding a piece of SAC collimating mirror 6 of FAC collimating mirror 5 is stated, the every SAC collimating mirror 6 is corresponding with a piece of reflecting mirror 31.
In a preferred embodiment of the present invention, one group of Phase cooling enthusiasm 2 being installed on shell 1 is using the monoblock type for being
Macro channel design, and macro channel region is located at corresponding 4 lower section of laser chip.
In a preferred embodiment of the present invention, the both ends for being separately positioned on shell 1 of import 11 and outlet 12, and in shell
The cooling channel for importing cooling air is formd between import 11 and outlet 12 in 1.
Specifically, the cooling air in the present invention is using liquid nitrogen.
In a preferred embodiment of the present invention, the space angle that space angle closes beam semiconductor laser closes Shu Fangfa:
A. the laser beam that each laser chip 4 issues；
B. light beam is incident on FAC collimating mirror 5 corresponding to corresponding 4 front of each laser chip, and is passed through and laser chip 4
Preceding is in the FAC collimating mirror 5 and SAC collimating mirror 6 of straight line arrangement；Laser beam is transmitted to SAC collimating mirror 6 by FAC collimating mirror 5
On, the laser beam synthesis for issuing single laser chip 4 is a branch of；
C. each light beam is incident in the reflection microscope group 3 of space angle array through SAC collimating mirror 6, and each of reflection microscope group 3 is anti-
Penetrating mirror 31 will be refracted on coupling mirror 7 by the light beam for being fed through corresponding SAC collimating mirror 6, by coupling mirror 7 by multiple laser cores
Piece 4 issue light beam coupling after formed and horizontal plane at certain space angle light cluster；
D. light cluster is coupled by coupling mirror 7, and is exported light cluster by optical fiber 8.
In a preferred embodiment of the present invention, space angle closes the preparation method of beam semiconductor laser:
Step 1, each laser chip 4 are encapsulated in the Phase cooling enthusiasm 2 of monoblock type by Jin Xi or silver-tin solder, phase transformation
Cooling enthusiasm 2 is encapsulated on shell 1 by indium solder；
Step 2, multiple FAC collimating mirrors 5 are adhesive in the surface of emission of corresponding each laser chip 4 by glass, and each FAC is quasi-
Straight mirror 5 is located at the front of the surface of emission of corresponding laser chip 4.
Step 3, multiple SAC collimating mirrors 6 are arranged in a one-to-one correspondence in the front of each FAC collimating mirror 5, pass through glass cement
Each SAC collimating mirror 6 is sticked on shell 1.
Each reflecting mirror 31 is sticked on shell 1 by the reflection microscope group 3 of step 4, space angle array by glass cement；Instead
The setting angle of mirror 31 is penetrated by between the spacing d1 and the distance between light beam incidence point and reflecting mirror 31 d2 between reflecting mirror 31
Angle determine.
The light cluster light beam of step 5, the space angle projected through space angle array mirror group 3 synthesizes on coupling mirror 7
A branch of, coupling mirror 7 is adhesive on shell 1 by glass；Laser after closing beam is exported eventually by optical fiber 8；
Step 6, the Phase cooling enthusiasm 2 of monoblock type are placed in 4 lower section of laser chip, and Phase cooling enthusiasm 2 is macro logical using monoblock type
Road structure, macro channel region are located at the lower section of laser chip 4, and the right and left of 1 outside side of shell has 11 He of import respectively
One outlet 12 recycles injection liquid nitrogen by import 11, then liquid nitrogen is discharged via outlet 12, continuous using Phase cooling technology
It cools.
In a preferred embodiment of the present invention, space angle is closed in the preparation method of beam semiconductor laser, reflects microscope group 3
Per a piece of reflecting mirror 31 and incident light between angle at 45 degree of angles, and the setting angle of reflecting mirror 31 is by between reflecting mirror 31
Spacing d1 and the distance between light beam incidence point and reflecting mirror 31 d2 between angle constitute.
It is according to the beneficial effect that space angle in above-described embodiment closes beam semiconductor laser:
A kind of space angle conjunction beam semiconductor laser, can effectively improve continuous power output；It is obtained by reflecting microscope group in sky
Between angular distribution light cluster；The light cluster synthesis for being distributed space angle using coupling mirror is a branch of, and passes through optical fiber output.
First, it includes array space angle reflecting mirror that the present invention, which proposes that new spatial angle closes beam semiconductor laser,
Group, the laser beam that each laser chip in laser array issues are incident on corresponding reflecting mirror in space angle light
Cluster.Shu Fangfa is closed using space angle, when overcoming Traditional Space step conjunction beam, structure is complicated for enthusiasm, and thermal capacitance effect difference is big,
Spectral quality is poor, monochromaticjty difference defect.
Second, when conventional semiconductor laser is using space step and horizontal conjunction beam, the size of laser thickness and transverse direction
Increase, is unfavorable for laser structure miniaturization.Space angle proposed by the present invention closes Shu Fangfa, so that laser structure more steps up
It gathers, it is integrated convenient for chip of laser, be conducive to the research and development of high power density laser device.
Third, the present invention propose that new spatial angle closes beam semiconductor laser and contains the cooling enthusiasm of integral type phase change,
The enthusiasm uses the macro channel design of monoblock type, compared with common stacked microchannel encapsulation enthusiasm, not only reduces costs, but also mention
High intensity.It is able to bear the phase transformation high pressure of Phase cooling technology generation, radiating efficiency will be greatly improved, has agreed with semiconductor and has swashed
The high power development trend of light device.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples；
Fig. 1 is the structural schematic diagram that space angle closes beam semiconductor laser in the embodiment of the present invention；
Fig. 2 is that space angle closes beam method schematic diagram one in the embodiment of the present invention；
Fig. 3 is that space angle closes beam method schematic diagram two in the embodiment of the present invention；
Fig. 4 is the Phase cooling enthusiasm schematic diagram of monoblock type in the embodiment of the present invention；
In figure: 1, shell, 11- import, the outlet 12-, 2, Phase cooling enthusiasm, the macro channel 21-, 3, reflection microscope group, 31, reflection
Mirror, 4, laser chip, 5, FAC collimating mirror, 6, SAC collimating mirror, 7, coupling mirror, 8, optical fiber.
Specific embodiment
Presently in connection with drawings and examples, the present invention is described in further detail, these attached drawings are simplified signal
Figure, the basic structure of the invention will be illustrated schematically only, therefore it only shows the composition relevant to the invention.
As shown in Fig. 1 ~ Fig. 4, a kind of space angle of the present embodiment closes beam semiconductor laser, including shell 1, is mounted on
At least one Phase cooling enthusiasm 2 and reflection microscope group 3 in shell 1, several being mounted in Phase cooling enthusiasm 2 swash
Optical chip 4；One group of collimation microscope group is installed, each collimation microscope group includes being mounted on each laser chip 4 on each laser chip 4
On at least a piece of FAC collimating mirror 5, and at least a piece of SAC collimating mirror 6 that corresponding each FAC collimating mirror 5 is arranged, laser core
The laser beam that piece 4 emits closes beam to reflection microscope group 3 after passing through the FAC collimating mirror 5 and SAC collimating mirror 6 that are fed through collimation microscope group
On；Reflection microscope group 3 in a straight line, is provided with coupling mirror between optical fiber 8 and reflection microscope group 3 with the optical fiber 8 being arranged on shell 1
7, light beam closes beam to optical fiber 8 after being fed through coupling mirror 7；And it is provided with what at least one set was connect with Phase cooling enthusiasm 2 on shell 1
Import 11 and outlet 12, import 11 and outlet 12 are separately positioned on the both ends of shell 1, and within the case 1, import 11 and outlet 12
Between form cooling channel for importing liquid nitrogen.
In a preferred embodiment of the present invention, one group of Phase cooling enthusiasm 2 being installed on shell 1 is using the monoblock type for being
Macro channel design, and macro channel region is located at corresponding 4 lower section of laser chip.
Specifically, reflection microscope group 3 in reflecting mirror 31 be mounted on the mounting plate in shell 1, mounting plate be arranged in a row
Multiple laser chips 4 it is parallel.And the installation of reflecting mirror 31 reflected in microscope group 3 is installed on a mounting board at an angle, and it is anti-
The angle penetrated between mirror 31 and mounting plate is the angle Θ, as shown in Figure 3.
In a preferred embodiment of the present invention, at least provided with a piece of FAC collimating mirror 5 on every laser chip 4, every
The corresponding a piece of SAC collimating mirror 6 of FAC collimating mirror 5, every SAC collimating mirror 6 are corresponding with a piece of reflecting mirror 31.Specifically, every laser
In a straight line, and every reflecting mirror 31 will be perforated through FAC collimating mirror for chip 4 and corresponding FAC collimating mirror 5 and SAC collimating mirror 6
The light beam of 5 and SAC collimating mirror 6 refracts on the coupling mirror 7.
In a preferred embodiment of the present invention, reflection microscope group 3 reflects microscope group using array space angle, including more
The reflecting mirror 31 that piece is arranged in a linear and is parallel to each other, every reflecting mirror 31 are vertically set in shell 1.
In a preferred embodiment of the present invention, as shown in Fig. 1 ~ Fig. 4, space angle closes Shu Fangfa:
A. the laser beam that each laser chip 4 issues；
B. light beam is incident on FAC collimating mirror 5 corresponding to corresponding 4 front of each laser chip, and is passed through and laser chip 4
Preceding is in the FAC collimating mirror 5 and SAC collimating mirror 6 of straight line arrangement；Laser beam is transmitted to SAC collimating mirror 6 by FAC collimating mirror 5
On, the laser beam synthesis for issuing single laser chip 4 is a branch of；
C. each light beam is incident in the reflection microscope group 3 of space angle array through SAC collimating mirror 6, and each of reflection microscope group 3 is anti-
Penetrating mirror 31 will be refracted on coupling mirror 7 by the light beam for being fed through corresponding SAC collimating mirror 6, by coupling mirror 7 by multiple laser cores
Piece 4 issue light beam coupling after formed and horizontal plane at certain space angle light cluster；
D. light cluster is coupled by coupling mirror 7, and is exported light cluster by optical fiber 8.
As shown in Fig. 1 ~ Fig. 3, in a preferred embodiment of the present invention, space angle closes the preparation side of beam semiconductor laser
Method:
Step 1, each laser chip 4 are encapsulated in the Phase cooling enthusiasm 2 of monoblock type by Jin Xi or silver-tin solder, phase transformation
Cooling enthusiasm 2 is encapsulated on shell 1 by indium solder.
Step 2, multiple FAC collimating mirrors 5 are adhesive in the surface of emission of corresponding each laser chip 4 by glass, each
FAC collimating mirror 5 is located at the front of the surface of emission of corresponding laser chip 4.
Step 3, multiple SAC collimating mirrors 6 are arranged in a one-to-one correspondence in the front of each FAC collimating mirror 5, and laser passes through FAC
Collimating mirror 5 is transmitted on SAC collimating mirror 6, and the laser beam synthesis for issuing single laser chip 4 is a branch of；SAC collimating mirror 6 with
The distance of FAC collimating mirror 5 is related to the focal length of FAC collimating mirror 5, and each SAC collimating mirror 6 is sticked on shell 1 by glass cement.
Each reflecting mirror 31 is sticked on shell 1 by the reflection microscope group 3 of step 4, space angle array by glass cement；And
The setting angle of reflecting mirror 31 by between reflecting mirror 31 spacing d1 and the distance between light beam incidence point and reflecting mirror 31 d2 it
Between angle constitute.
Specifically, space angle closes in the preparation method of beam semiconductor laser, instead in a preferred embodiment of the present invention
The angle per a piece of reflecting mirror 31 between incident light of microscope group 3 is penetrated into 45 degree of angles.
The light cluster light light beam of step 5, the space angle projected through space angle array mirror group 3 closes on coupling mirror 7
At a branch of, coupling mirror 7 is adhesive on shell 1 by glass；Laser after closing beam is exported eventually by optical fiber 8.
Step 6, the Phase cooling enthusiasm 2 of monoblock type are placed in 4 lower section of laser chip, and Phase cooling enthusiasm 2 uses monoblock type
Macro channel design, macro channel region are located at the lower section of laser chip 4, and the right and left of 1 outside side of shell has an import respectively
11 and one outlet 12, injection liquid nitrogen is recycled by import 11, then liquid nitrogen is discharged via outlet 12, utilizes Phase cooling technology
Constantly cool.
Working principle of the present invention: it is installed on integral type phase change on shell 1 and cools down enthusiasm 2, using the macro channel 21 of monoblock type
Design, macro channel region are located at the lower section of chip region, and the right and left of 1 outside side of shell has an import 11 and outlet respectively
12, it is constantly cooled by circulation injection liquid nitrogen, reduces the requirement to refrigerant liquid, while also reducing cost.Energy
The high pressure that phase transformation generates enough is born, radiating efficiency is greatly improved.Array space angle reflection microscope group 3 is installed on shell 1,
By reflecting microscope group 3, the light cluster in space angle distribution can be obtained, is finally synthesized the light cluster of space angle using coupling mirror 7
It is a branch of, by optical fiber output.The laser chip 4 being installed in the cooling enthusiasm 2 of integral type phase change, is welded in entirety by golden tin solder
It is compact-sized in formula Phase cooling enthusiasm 2, be conducive to integrated on a large scale.The difference for reducing 4 temperature of laser chip, mentions
The power of high semiconductor laser.It is installed on FAC collimating mirror 5 on laser chip 4, each laser core in the array of laser chip 4
The laser beam that piece 4 issues is incident on corresponding FAC collimating mirror 5, and FAC collimating mirror 5 can reduce high-energy semi conductor Laser
Fast axle light beam diverging.SAC collimating mirror 6 and FAC collimating mirror 5 is mutually matched, and compensates for the astigmatism of beam.Coupling mirror 7, will
The light cluster for being incident on space reflection microscope group 3 is exported by coupling mirror 7.Obtain high-power conjunction Shu Xiaoguo.
A kind of new spatial angle of the invention closes beam semiconductor laser and proposes that a kind of new spatial angle closes Shu Fangfa,
Semiconductor laser array includes multiple laser chips 4, and each 4 horizontal array of laser chip is distributed in the cooling heat of integral type phase change
Sincere feeling 2.The light that laser chip 4 issues is collimated by the collimation of FAC collimating mirror 5, SAC collimating mirror 6, and it is anti-to be incident on array space angle
Penetrate microscope group 3.By reflecting microscope group 3, the light cluster in space angle distribution can be obtained.Finally space angle is divided using coupling mirror 7
The light cluster synthesis of cloth is a branch of, is exported by optical fiber 8.
Based on the above description of the preferred embodiments of the present invention, through the above description, related personnel completely can be with
Without departing from the scope of the technological thought of the present invention', various changes and amendments are carried out.The technical scope of this invention
It is not limited to the contents of the specification, it is necessary to determine the technical scope according to the scope of the claims.
Claims (10)
1. a kind of space angle closes beam semiconductor laser, including shell (1), it is mounted at least one in the shell (1)
Phase cooling enthusiasm (2) and reflection microscope group (3), several laser chips (4) being mounted on Phase cooling enthusiasm (2),
It is characterized in that: collimation microscope group being installed on the laser chip (4)；Reflection microscope group (3) and the light being arranged on shell (1)
Fine (8) in a straight line, are provided with coupling mirror (7), and be provided on shell (1) between the optical fiber (8) and reflection microscope group (3)
The import (11) and outlet (12) of at least one set of importing cooling air being connect with the Phase cooling enthusiasm (2).
2. space angle according to claim 1 closes beam semiconductor laser, it is characterised in that: each collimation microscope group
It is set including at least a piece of FAC collimating mirror (5) being mounted on each laser chip (4), and corresponding each FAC collimating mirror (5)
At least a piece of SAC collimating mirror (6) set.
3. space angle according to claim 2 closes beam semiconductor laser, it is characterised in that: the reflection microscope group (3)
Using array space angle reflect microscope group, the reflecting mirror for being arranged in a linear and being parallel to each other including multi-disc (31), every
The reflecting mirror (31) is vertically set in shell (1).
4. space angle according to claim 3 closes beam semiconductor laser, it is characterised in that: the every laser chip
(4) with corresponding FAC collimating mirror (5) and SAC collimating mirror (6) in a straight line, and the every reflecting mirror (31) will be perforated through
The light beam of FAC collimating mirror (5) and SAC collimating mirror (6) refracts on the coupling mirror (7).
5. space angle according to claim 3 closes beam semiconductor laser, it is characterised in that: every laser chip (4)
On at least provided with a piece of FAC collimating mirror (5), the corresponding a piece of SAC collimating mirror (6) of the every FAC collimating mirror (5), every institute
It states SAC collimating mirror (6) and is corresponding with a piece of reflecting mirror (31).
6. space angle according to claim 1 closes beam semiconductor laser, it is characterised in that: be installed on shell (1)
One group of Phase cooling enthusiasm (2) using the macro channel design of monoblock type that is, and macro channel region is located at corresponding laser chip (4)
Lower section.
7. space angle according to claim 1 closes beam semiconductor laser, it is characterised in that: the import (11) and out
The both ends for being separately positioned on shell (1) of mouth (12), and use is formd between the import (11) and outlet (12) in shell (1)
In the cooling channel for importing cooling air.
8. the space angle that space angle described in any claim closes beam semiconductor laser according to claim 1 ~ 7 closes
Shu Fangfa, it is characterised in that:
A. the laser beam that each laser chip (4) issues；
B. light beam be incident in front of corresponding each laser chip (4) corresponding to FAC collimating mirror (5) on, and pass through and laser
In the FAC collimating mirror (5) and SAC collimating mirror (6) of straight line arrangement before chip (4)；Laser beam is passed by FAC collimating mirror (5)
It is delivered on SAC collimating mirror (6), the laser beam synthesis for issuing single laser chip (4) is a branch of；
C. each light beam is incident in the reflection microscope group (3) of space angle array through SAC collimating mirror (6), every in reflection microscope group (3)
One reflecting mirror (31) will be refracted on coupling mirror (7) by the light beam for being fed through corresponding SAC collimating mirror (6), pass through coupling mirror
(7) by multiple laser chips (4) issue light beam coupling after formed and horizontal plane at certain space angle light cluster；
D. light cluster is coupled by coupling mirror (7), and is exported light cluster by optical fiber (8).
9. space angle described in any claim closes the preparation method of beam semiconductor laser according to claim 1 ~ 7,
It is characterized by:
Step 1, each laser chip (4) are encapsulated in the Phase cooling enthusiasm (2) of monoblock type by Jin Xi or silver-tin solder,
Phase cooling enthusiasm (2) is encapsulated on shell (1) by indium solder；
Step 2, multiple FAC collimating mirrors (5) are adhesive in the surface of emission of corresponding each laser chip (4) by glass, each
FAC collimating mirror (5) is located at the front of the surface of emission of corresponding laser chip (4)；
Step 3, multiple SAC collimating mirrors (6) are arranged in a one-to-one correspondence in the front of each FAC collimating mirror (5), pass through glass cement
Each SAC collimating mirror (6) is sticked on shell (1)；
Each reflecting mirror (31) is sticked on shell (1) by the reflection microscope group (3) of step 4, space angle array by glass cement；
The setting angle of reflecting mirror (31) by between spacing d1 and light beam incidence point between reflecting mirror (31) and reflecting mirror (31) away from
It is determined from the angle between d2；
The light cluster light light beam of step 5, the space angle projected through space angle array mirror group (3) closes on coupling mirror (7)
At a branch of, coupling mirror (7) is adhesive on shell (1) by glass；Laser after closing beam is exported eventually by optical fiber (8)；
Step 6, the Phase cooling enthusiasm (2) of monoblock type are placed in below laser chip (4), and Phase cooling enthusiasm (2) is using whole
The macro channel design of formula, macro channel region are located at the lower section of laser chip (4), and the right and left of the external side of shell (1) has one respectively
A import (11) and one outlet (12) recycle injection liquid nitrogen by import (11), then liquid nitrogen are discharged via outlet (12), benefit
It is constantly cooled with Phase cooling technology.
10. the preparation method that space angle according to claim 9 closes beam semiconductor laser, it is characterised in that: reflection
Microscope group (3) per a piece of reflecting mirror (31) and incident light between angle at 45 degree of angles, and the setting angle of reflecting mirror (31) by
Angle between the distance between spacing d1 and light beam incidence point between reflecting mirror (31) and reflecting mirror (31) d2 is constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910547540.4A CN110265877A (en) | 2019-06-24 | 2019-06-24 | A kind of space angle closes beam semiconductor laser and its preparation process and closes Shu Fangfa |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910547540.4A CN110265877A (en) | 2019-06-24 | 2019-06-24 | A kind of space angle closes beam semiconductor laser and its preparation process and closes Shu Fangfa |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110265877A true CN110265877A (en) | 2019-09-20 |
Family
ID=67920680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910547540.4A Pending CN110265877A (en) | 2019-06-24 | 2019-06-24 | A kind of space angle closes beam semiconductor laser and its preparation process and closes Shu Fangfa |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110265877A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112310801A (en) * | 2020-11-09 | 2021-02-02 | 中国工程物理研究院应用电子学研究所 | Phase-change cooling semiconductor laser device |
| CN113708205A (en) * | 2021-08-28 | 2021-11-26 | 光惠（上海）激光科技有限公司 | Fiber laser system |
| CN114421279A (en) * | 2022-03-30 | 2022-04-29 | 北京凯普林光电科技股份有限公司 | Semiconductor laser device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044842A (en) * | 2009-10-10 | 2011-05-04 | 中国科学院理化技术研究所 | Single-fin type laser diode micro-channel phase-change heat sink |
| CN105048287A (en) * | 2015-08-12 | 2015-11-11 | 西安炬光科技股份有限公司 | Horizontal-array high-power semiconductor laser |
| CN105514794A (en) * | 2016-01-11 | 2016-04-20 | 北京凯普林光电科技股份有限公司 | Semiconductor laser |
| CN105652452A (en) * | 2016-01-26 | 2016-06-08 | 北京凯普林光电科技股份有限公司 | Space beam combination device and system |
| CN106443906A (en) * | 2016-09-22 | 2017-02-22 | 苏州长光华芯光电技术有限公司 | Laser array fiber coupling device based on macro channel cooling and coupling method thereof |
| CN206211264U (en) * | 2016-11-02 | 2017-05-31 | 苏州长光华芯光电技术有限公司 | Light beam recombinates coupling device |
| CN107221834A (en) * | 2017-05-16 | 2017-09-29 | 西安炬光科技股份有限公司 | The encapsulating structure and method for packing of semiconductor laser |
| CN109244815A (en) * | 2018-09-27 | 2019-01-18 | 中国兵器装备研究院 | Integrated high power bundling device |
-
2019
- 2019-06-24 CN CN201910547540.4A patent/CN110265877A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044842A (en) * | 2009-10-10 | 2011-05-04 | 中国科学院理化技术研究所 | Single-fin type laser diode micro-channel phase-change heat sink |
| CN105048287A (en) * | 2015-08-12 | 2015-11-11 | 西安炬光科技股份有限公司 | Horizontal-array high-power semiconductor laser |
| CN105514794A (en) * | 2016-01-11 | 2016-04-20 | 北京凯普林光电科技股份有限公司 | Semiconductor laser |
| CN105652452A (en) * | 2016-01-26 | 2016-06-08 | 北京凯普林光电科技股份有限公司 | Space beam combination device and system |
| CN106443906A (en) * | 2016-09-22 | 2017-02-22 | 苏州长光华芯光电技术有限公司 | Laser array fiber coupling device based on macro channel cooling and coupling method thereof |
| CN206211264U (en) * | 2016-11-02 | 2017-05-31 | 苏州长光华芯光电技术有限公司 | Light beam recombinates coupling device |
| CN107221834A (en) * | 2017-05-16 | 2017-09-29 | 西安炬光科技股份有限公司 | The encapsulating structure and method for packing of semiconductor laser |
| CN109244815A (en) * | 2018-09-27 | 2019-01-18 | 中国兵器装备研究院 | Integrated high power bundling device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112310801A (en) * | 2020-11-09 | 2021-02-02 | 中国工程物理研究院应用电子学研究所 | Phase-change cooling semiconductor laser device |
| CN113708205A (en) * | 2021-08-28 | 2021-11-26 | 光惠（上海）激光科技有限公司 | Fiber laser system |
| CN114421279A (en) * | 2022-03-30 | 2022-04-29 | 北京凯普林光电科技股份有限公司 | Semiconductor laser device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110265877A (en) | A kind of space angle closes beam semiconductor laser and its preparation process and closes Shu Fangfa | |
| CN104836119A (en) | Optical fiber coupled laser | |
| CN103368066B (en) | A kind of ramp type multitube semiconductor laser coupling device and method | |
| CN202995141U (en) | Light beam shaping structure of semiconductor laser array | |
| CN202548385U (en) | Optical fiber coupling module of platform-type turning and reflecting single-tube semiconductor laser | |
| CN108169854A (en) | A kind of Space Coupling structure of more To encapsulation semiconductor laser | |
| CN205790924U (en) | A kind of pyramid formula many strokes pumping video disc laser instrument | |
| CN202268596U (en) | MOPA (master oscillator power amplifier) system for semi-conductor diode-pumped alkali metal vapor lasers | |
| CN109100835A (en) | More high-power optical fiber coupled lasers of single tube | |
| CN103219648B (en) | A kind of fiber coupling system of LASER Light Source | |
| CN102904161B (en) | High-power integrated laser light source | |
| CN107167864B (en) | A kind of array line laser quantum dot manufacturing backlight module method and device | |
| CN105071224A (en) | Laser | |
| CN203398519U (en) | Inclined-surface type multi-diode semiconductor laser coupling device | |
| WO2021051468A1 (en) | Laser | |
| CN206975364U (en) | Display device and its back lighting device of tool light path bending | |
| CN201985431U (en) | Fiber coupling semi-conductor laser module | |
| CN109581599A (en) | A kind of the multi-wavelength single fiber output optical module and laser of hybrid package | |
| CN102709804A (en) | Integrated laser light source | |
| CN209014894U (en) | Projector light source device | |
| CN206727418U (en) | More single tube fiber coupled lasers | |
| CN201478684U (en) | Array laser | |
| CN106025788A (en) | Circulating water cooling device for semiconductor laser | |
| CN218958254U (en) | Laser pump source | |
| CN2762400Y (en) | Side pumping module for arch semiconductor laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190920 |