CN113708205A - Fiber laser system - Google Patents
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- CN113708205A CN113708205A CN202110999341.4A CN202110999341A CN113708205A CN 113708205 A CN113708205 A CN 113708205A CN 202110999341 A CN202110999341 A CN 202110999341A CN 113708205 A CN113708205 A CN 113708205A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0407—Liquid cooling, e.g. by water
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
- H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
Abstract
The invention relates to a fiber laser system, which comprises a compact fiber laser, has excellent heat dissipation effect, and can reduce the volume and the cost of the laser. By a pumping unit module; a gain chamber unit module; a bin-divided sealable cooling platform; a power supply control module; the output optical cable is formed by directly coupling the pumping light of the semiconductor chip into YDF, and the whole machine adopts a design scheme without any welding points; and no device needing optical fiber fusion is arranged, so that miniaturized integration is realized. The multi-core optical fiber scheme can be adopted to realize the controllable and excellent optical field characteristics of far field superposition.
Description
Technical Field
The invention relates to a fiber laser device, which comprises a compact fiber laser, has excellent heat dissipation effect, and can reduce the volume and the cost of the laser.
Background
With the development of laser technology, lasers are widely applied to various industries, wherein fiber lasers are widely applied with the advantages of low cost, high efficiency, high energy density and the like, but due to the cost limitation of fiber devices and semiconductor laser pump sources, the difficulty of fiber processing technology is high, fiber welding equipment is precise and high in price, so that the cost, the capacity and the maintainability of the fiber lasers are limited; the optical devices in the optical fiber laser are more and more complicated in distribution, and are not easy to maintain; the traditional optical fiber laser has more internal optical fiber devices, and complex processes such as optical fiber fusion and the like are needed in the manufacturing and maintenance processes; after the output optical cable is welded, the output optical cable is inconvenient to replace randomly; more optical devices are needed, and the cost is limited; the pumped semiconductor laser has high cost and limited cost. The laser volume is limited by the optical device and the pumping semiconductor laser.
The use of fiber laser for material processing is quite common, but when the fiber laser heats a material, resonance between laser frequency and the material can be generated, which causes the phenomenon of material splashing.
Laser output by the optical fiber laser enters the surface of a processing workpiece after passing through the focusing lens group, and under a common processing scene, when light intensity distribution of a light field directly output by the laser is Gaussian distribution, the laser output by the optical fiber laser is favorable for processing laser after passing through the focusing lens group, and the laser output by the common optical fiber laser is difficult to realize standard Gaussian distribution, so that the light field after passing through the focusing lens group is difficult to control.
When multi-core fiber laser is superposed, the characteristics of single-mode laser sometimes need to be simulated, so that a single-mode processing scene is compatible when the laser energy is improved.
For the auxiliary heating laser of laser processing, the temperature of materials around a processing point is mainly changed, the auxiliary heating laser which is wasted due to excessive positions of the processing point is undesirable, and the conventional auxiliary laser is a uniform integral light field and is not specially used for the redundant auxiliary heating laser around the position of the processing point.
Based on these disadvantages, the present invention designs a compact fiber laser without any fiber fusion and designs a laser suitable for laser processing.
Disclosure of Invention
A compact fiber laser, the system is composed of a pumping unit module; a gain chamber unit module; a bin-divided sealable cooling platform; a power supply control module; an output optical cable; the pump unit module is designed in a pump unit area in the bin-divided type sealable cooling platform and mainly comprises N +1 semiconductor chips (one of the semiconductor chips is a visible light semiconductor chip for indication) and N +1 fast axis collimating lenses, N +1 slow axis collimating lenses, N +1 reflectors, a fast axis coupling lens, a slow axis coupling lens, and electrode pins and electrode connecting wires for conducting electric power to the semiconductor chips, wherein the fast axis collimating lenses, the N +1 slow axis collimating lenses, the N +1 reflectors, the fast axis coupling lenses, the slow axis coupling lenses and the electrode pins and the electrode connecting wires are matched with the fast axis collimating lenses; the gain cavity unit module consists of a section of gain optical fiber with two end faces subjected to special reflection coating treatment and an optical fiber connector (SMA); the bin-divided type sealable cooling platform consists of a water cooling platform, and is divided into a pumping unit area and a gain cavity unit area by a bin-divided partition plate, wherein the pumping unit area can be sealed; the power supply control module consists of a constant current driving power supply and a control system for supplying power to a semiconductor chip in the pumping unit module, wherein the control system consists of a hardware system (circuit board) and a software system (control program); the output optical cable is a water-cooled QBH optical cable with a cladding light stripping function, and the input end of the QBH optical cable is inserted into an optical fiber connector (SMA) and is in butt joint with the output end of the gain optical fiber in the gain cavity unit module;
preferably, the semiconductor chip is a COS chip, which improves the stability of the light source by using the COS chip, and simultaneously, is convenient to install, integrate and maintain.
The light emitted from the semiconductor chip is turned by N +1 mirrors, and in some embodiments, the N +1 mirrors are staggered in the radial direction and/or the circumferential direction (or the X direction and/or the Y direction) as viewed along the optical axis of the fiber laser, which however leads to the problems of large space requirements, difficulty in integration and too much light deviation from the axis.
Meanwhile, the existing laser processing laser needs an auxiliary light source for heating the substances around the processing region, and therefore needs two wavelengths of laser light, for this, in the present invention, a corresponding improvement can be made for such a laser with an auxiliary heating light source, at this time, in addition to the indicating visible light semiconductor chip, a semiconductor chip with two wavelengths can be used, the first laser wavelength is a pumping laser light of a gain medium, the second laser wavelength is an auxiliary heating laser light absorbed by the gain medium, except for the indicating visible light semiconductor chip and the corresponding reflecting mirror, the N semiconductor chips are divided into N (1) first wavelength semiconductor chips and N (2) second wavelength semiconductor chips, the N reflecting mirrors are also divided into N (1) first wavelength reflecting mirrors and N (2) second wavelength reflecting mirrors, the first wavelength semiconductor chips correspond to the first wavelength reflecting mirrors, the second wavelength semiconductor chip corresponds to the second wavelength reflector, wherein the first wavelength reflector is a first dichroic mirror which reflects the first wavelength and transmits the second wavelength, the second wavelength reflector is a second dichroic mirror which reflects the second wavelength and transmits the first wavelength, on the basis, observation along the axial direction of the optical fiber laser light can be carried out, each second reflector is overlapped with one first wavelength reflector, the first wavelength reflectors are staggered with each other, and the second wavelength reflectors are staggered with each other. The auxiliary heating light source can adopt visible light laser.
The optical fiber laser also comprises a focusing lens group in laser processing output, and for the laser of the application, due to a special coupling structure, namely, viewed from the axial direction of the optical fiber laser light, the first wavelength reflectors are mutually staggered on the optical path, the second wavelength reflectors are mutually staggered on the optical path, the first wavelength lasers are mutually staggered on the optical path, the second wavelength lasers are mutually staggered on the optical path, and the light beams are spatially separated, so that the laser is suitable for forming far-field superposed light beams, and the initial light field distribution of the laser is particularly suitable for designing and specifying the superposed light field output. The use of conventional gain fibers, however, results in premature mixing of the superimposed fields, and thus the superimposed field output specified in the far field is not easily achieved.
The inventor notices the characteristic of the multi-core fiber laser, is matched with the coupling light path of the application, and when the characteristics are observed from the optical axis direction, each light beam is separated in space, if the pumping unit module of the application is directly coupled with the multi-core fiber laser, the coupling efficiency of the multi-core fiber laser is greatly improved, and meanwhile, the independent light intensity of each semiconductor chip can be controlled, so that the far-field superposed light intensity of the multi-core fiber laser meets the specified requirement.
The compact fiber laser has the following working mode:
the power supply control module transmits a set constant current to each semiconductor chip (indicating a visible light semiconductor chip as an independent power supply system) through an electrode pin and an electrode connecting wire of the pumping unit module, a pumping light beam (976nm) emitted by each semiconductor chip passes through the fast axis collimating lens, the slow axis collimating lens, the reflector, the fast axis coupling lens and the slow axis coupling lens in sequence and then is coupled and focused into the input end surface of the gain optical fiber in the gain cavity unit module, the input end surface of the gain optical fiber is subjected to 1070nm total reflection coating treatment, the gain optical fiber is wound on a bin-divided type sealable cooling platform according to an appointed design, the output end of the gain optical fiber is subjected to 10% reflection coating treatment and is fixed in an optical fiber connector (SMA), the input end total reflection coating, the output end reflection coating and the gain optical fiber body form a gain resonant cavity system, and therefore laser coupled into the gain optical fiber by the pumping unit module is subjected to gain amplification, the laser output from the output end of the gain fiber is coupled into the output optical cable fiber by an optical fiber connector (SMA) and finally output through the output optical cable.
When the multi-core fiber laser scheme is adopted, the gain fiber has a plurality of doped fiber cores in a larger inner cladding, and the number and the positions of the doped fiber cores are set to enable each first-wavelength laser to be coupled into a corresponding doped fiber core through the coupling structure. The number of the first wavelength semiconductor chips is N (1) ═ N (2) +1, the number of the doped cores is also N (1) ═ N (2) +1, and the number of the second wavelength semiconductor chips is N (2). The doped fiber core is provided with a fiber core positioned in the center and N (2) fiber cores at the periphery, and N (2) second-wavelength laser emitted by the second-wavelength semiconductor chip is input into the positions of the N fiber cores at the periphery through the coupling structure.
As a preferred embodiment, the first wavelength laser semiconductor chip has 7 corresponding to the 7-core multicore fiber of fig. 6, and the second wavelength semiconductor chip has 6 corresponding to the surrounding 6 cores.
Preferably, the driving current of each semiconductor chip is independently adjustable, the light intensity output by the first wavelength semiconductor chip corresponding to the center doped fiber core is I (1), the light intensity output by the first wavelength semiconductor chip corresponding to the peripheral doped fiber core is I (2), and preferably, the intensity of I (1) and I (2) can be respectively adjusted, so that the output optical fiber laser superposition field of the multi-core optical fiber laser meets the specified requirement, and preferably, the superposition light field can meet Gaussian distribution. Or preferably, the superposed light field can be made to conform to 0 th order bessel distribution, a CCD structure can be arranged at the output end of the output optical cable of the multi-core optical fiber, and the driving current of each semiconductor chip is adjusted, so that the light intensities of the light intensities I (1) and I (2) are changed, when the light intensity field of the CCD conforms to gaussian distribution or 0 th order bessel distribution, the driving current of each semiconductor at that time is recorded, and the corresponding current is used in the subsequent processing.
And the laser with the second wavelength just meets the requirement of auxiliary heating laser because the laser is positioned at the periphery.
The cores of the multicore fiber are too close to each other, which tends to have a large effect on each other, and when the optical fields are superimposed for a better far field, the distance between the individual doped cores is preferably larger than 15 microns, more preferably larger than 30 microns, so that the laser forms a controllable laser processing optical field in the far field.
Preferably, the laser system adopts the design of 13 semiconductor chips except the semiconductor chip for indication, can also design any number of COS chips according to the requirement, and can also directly use a high-power palladium strip;
preferably, the internal base of the pumping unit module is stepped;
preferably, a semiconductor chip with a wavelength of 976nm is adopted in a pumping unit module in the laser system, and the semiconductor chips with different wavelengths, such as 915nm and the like, can be matched according to different types of gain fibers;
preferably, about 20m gain fiber (YDF) is adopted in the laser system, and the gain fiber with different lengths can be designed according to the absorptivity of the gain fiber;
preferably, the laser system in which the fiber gain cavity outputs 1070nm laser light, because the active fiber employed in the fiber gain cavity is Yb, but any kind of wavelength is contemplated, so that Er, Th, Ho, doped fiber or some other combination may be used, even fiber lasers shifted in output by nonlinear optical crystals, raman fiber, etc.;
preferably, the laser system adopts a fiber-optic connector (SMA) as the output end coupling device, and can also be replaced by other fiber-optic coupling devices;
in some embodiments, the semiconductor chips in the laser system adopt a stepped correlation array layout, the semiconductor chips and the reflectors are mounted in a stepped substrate, each semiconductor chip and the corresponding reflector are mounted on an independent step of the semiconductor chip, and a reasonable step height difference is formed between every two steps, so that the reflectors are not blocked with each other, and other forms of layout designs such as single row and the like can be selected according to requirements;
preferably, the laser system integrates the power supply control module, but the power supply control module can also be designed separately from the optical part, and the optical part is powered in the form of a cable.
On this basis, this application has still solved the following problem:
(1) the semiconductor chip pump light is directly coupled into YDF, and the whole machine adopts a design scheme without any welding point; no device which needs to be subjected to optical fiber fusion splicing exists, so that the optical fiber fusion splicing device can be produced and maintained without any optical fiber fusion splicing equipment;
(2) a design method of forming a reflecting resonant cavity by adopting a mode of coating a film on the end face of the optical fiber or directly etching a grating on the gain optical fiber;
(3) adopting an integrated light path design mode of sub-bins;
(4) the number of optical devices is reduced to the maximum extent, so that the dependence degree of consistency of the optical fiber devices of the optical fiber laser is greatly reduced;
(5) the output optical cable can be replaced at any time, so that the optical cable has great advantages in application and can replace output light spots at any time according to process requirements;
(6) the semiconductor chip and the equipment are directly installed, so that the cost of the semiconductor laser module with the largest proportion in the optical fiber laser is reduced to the maximum extent;
(7) optical devices such as a beam combiner and the like are not arranged, the number of gratings is reduced, and the cost of the optical devices is greatly reduced;
(8) the multi-core fiber laser is adopted, so that the coupling efficiency is improved, the far-field superposition field of the output optical cable can be controlled, the Gaussian distribution or the 0-order Bessel distribution is preferably realized, meanwhile, the auxiliary heating laser avoids the unnecessary region, the energy consumption is reduced, and meanwhile, the auxiliary heating is more suitable for auxiliary heating.
Drawings
FIG. 1 is a schematic structural diagram of a fiber laser system according to the present application;
FIG. 2 is a schematic diagram of a gain fiber structure;
FIG. 3 is a schematic diagram of pump light coupling into YDF for a semiconductor chip according to some embodiments;
FIG. 4 is a schematic view of the coupling of a gain fiber to an output light;
FIG. 5 is a schematic diagram of laser operation;
fig. 6 is a schematic view of a multicore fiber.
The objects, features, and advantages of the present application will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In the following description, suffixes such as "module", "component", or "unit" used to denote elements are used only for the convenience of description of the present application, and have no specific meaning by themselves. Thus, "module", "component" or "unit" may be used mixedly.
A compact fiber laser, the system consisting of a pump unit module (1); a gain chamber unit module (2); a bin-divided sealable cooling platform (3); a power supply control module (4); an output optical cable assembly (5); the pump unit module (1) is designed in a pump unit area (shown in figure 1) in the bin-divided type sealable cooling platform (3), and mainly comprises N +1 semiconductor chips (one of which is a visible light semiconductor chip for indication) and N +1 fast axis collimating lenses matched with the semiconductor chips, N +1 slow axis collimating lenses, N +1 reflectors, a fast axis coupling lens, a slow axis coupling lens, and electrode pins and electrode connecting wires for conducting electric power to the semiconductor chips (shown in figure 2); the gain cavity unit module (2) is composed of a section of gain optical fiber (shown in figure 3) with two end faces subjected to special reflection coating treatment and an optical fiber connector (SMA); the bin-divided type sealable cooling platform (3) consists of a water cooling platform, and is divided into a pumping unit area and a gain cavity unit area by a bin-divided partition plate, wherein the pumping unit area can be sealed; the power supply control module (4) consists of a constant current driving power supply and a control system for supplying power to a semiconductor chip in the pumping unit module (1), wherein the control system consists of a hardware system (circuit board) and a software system (control program); the output optical cable (5) is a water-cooled QBH optical cable with a cladding light stripping function, the input end of the QBH optical cable is inserted into an optical fiber connector (SMA) and is in butt joint with the output end of the gain optical fiber in the gain cavity unit module (2) (as shown in figure 4);
preferably, the semiconductor chip is a COS chip, which improves the stability of the light source by using the COS chip, and simultaneously, is convenient to install, integrate and maintain.
From fig. 4 it can be seen that the light is diverted by N +1 mirrors, and in some embodiments, the N +1 mirrors are offset from each other in the radial and/or circumferential direction (or X-direction and/or Y-direction) as seen in the axial direction along the light, which however leads to problems of large space requirements, not easy integration and too much deviation of the light from the axis.
Meanwhile, the existing laser processing laser needs an auxiliary light source for heating the substances around the processing region to prevent laser splashing caused by resonance, and therefore, laser with two wavelengths is needed, for this, in the present invention, a corresponding improvement can be made for such a laser with an auxiliary heating light source, at this time, in addition to the semiconductor chip for indication, a semiconductor chip with two wavelengths can be used, the first laser wavelength is pump laser of a gain medium, the second laser wavelength is auxiliary heating laser which is not absorbed by the gain medium, besides the semiconductor chip for indication and the corresponding reflecting mirror, the N semiconductor chips are divided into N (1) first wavelength semiconductor chips and N (2) second wavelength semiconductor chips, the N reflecting mirrors are also divided into N (1) first wavelength reflecting mirrors and N (2) second wavelength reflecting mirrors, the first wavelength semiconductor chips correspond to the first wavelength reflecting mirrors, the second wavelength semiconductor chip corresponds to the second wavelength reflector, wherein the first wavelength reflector is a first dichroic mirror which reflects the first wavelength and transmits the second wavelength, the second wavelength reflector is a second dichroic mirror which reflects the second wavelength and transmits the first wavelength, on the basis, observation along the axial direction of light can be carried out, each second reflector is overlapped with one first wavelength reflector, the first wavelength reflectors are staggered with each other, and the second wavelength reflectors are staggered with each other. The auxiliary heating light source can adopt visible light laser.
The optical fiber laser also comprises a focusing lens group in laser processing output, and for the laser of the application, due to a special coupling structure, namely, viewed from the axial direction of the optical fiber laser light, the first wavelength reflectors are mutually staggered on the optical path, the second wavelength reflectors are mutually staggered on the optical path, the first wavelength lasers are mutually staggered on the optical path, the second wavelength lasers are mutually staggered on the optical path, and the light beams are spatially separated, so that the laser is suitable for forming far-field superposed light beams, and the initial light field distribution of the laser is particularly suitable for designing and specifying the superposed light field output. The use of conventional gain fibers, however, results in premature mixing of the superimposed optical fields and therefore does not achieve far-field specified superimposed optical field output.
The inventor notices the characteristic of the multi-core fiber laser, is matched with the coupling light path of the application, and when the characteristics are observed from the optical axis direction, each light beam is separated in space, if the pumping unit module of the application is directly coupled with the multi-core fiber laser, the coupling efficiency of the multi-core fiber laser is greatly improved, and meanwhile, the independent light intensity of each semiconductor chip can be controlled, so that the far-field superposed light intensity of the multi-core fiber laser meets the specified requirement.
The compact fiber laser has the following working mode:
the power supply control module (4) transmits the set constant current to each semiconductor chip (indicating a visible light semiconductor chip as an independent power supply system) through an electrode pin and an electrode connecting wire of the pumping unit module (1), a pumping light beam (976nm) emitted by each semiconductor chip passes through the fast axis collimating lens, the slow axis collimating lens, the reflector, the fast axis coupling lens and the slow axis coupling lens in sequence and then is coupled and focused into the input end surface of the gain fiber in the gain cavity unit module (2), the input end surface of the gain fiber is subjected to 1070nm total reflection coating treatment, the gain fiber is coiled on a bin-type sealable cooling platform (3) according to the specified design, the output end is subjected to 1070nm 10% reflection coating treatment and is fixed in an optical fiber connector (SMA), and the input end total reflection coating, the output end reflection coating and the gain fiber form a gain resonant cavity system, the laser coupled into the gain fiber by the pumping unit module (1) is gain-amplified, and the laser output from the output end of the gain fiber is coupled into the fiber of the output optical cable (5) by the fiber connector (SMA) and finally output through the output optical cable (5); (as shown in figure 5).
When the multi-core fiber laser scheme is adopted, the gain fiber has a plurality of doped fiber cores in a larger inner cladding, and the number and the positions of the doped fiber cores are set to enable each first-wavelength laser to be coupled into a corresponding doped fiber core through the coupling structure. The number of the first wavelength semiconductor chips is N (1) ═ N (2) +1, the number of the doped cores is also N (1) ═ N (2) +1, and the number of the second wavelength semiconductor chips is N (2). The doped fiber core is provided with a fiber core positioned in the center and N (2) fiber cores at the periphery, and N (2) second-wavelength laser light emitted by the second-wavelength semiconductor chip is input into the positions of the N (2) fiber cores at the periphery through the coupling structure.
As a preferred embodiment, the first wavelength laser semiconductor chip has 7 corresponding to the 7-core multicore fiber of fig. 6, and the second wavelength semiconductor chip has 6 corresponding to the surrounding 6 cores.
Preferably, the driving current of each semiconductor chip is independently adjustable, the light intensity output by the first wavelength semiconductor chip corresponding to the central doped fiber core is I (1), the light intensity output by the first wavelength semiconductor chip corresponding to the peripheral doped fiber core is I (2), and preferably, the intensities of I (1) and I (2) can be respectively adjusted, so that the output fiber laser superposition field of the multicore fiber laser meets the specified requirements, in some embodiments, the superposed light field can meet gaussian distribution, and in other embodiments, the superposed light field can meet 0 th order bessel distribution. The output end of the output optical cable of the multi-core optical fiber can be provided with a CCD structure, the driving current of each semiconductor chip is adjusted, so that the light intensity of the light intensity I (1) and the light intensity of the light intensity I (2) are changed, when the light intensity field of the CCD accords with Gaussian distribution or 0 th order Bessel distribution, the driving current of each semiconductor at the moment is recorded, and the corresponding current is used in the subsequent processing.
And the laser with the second wavelength just meets the requirement of auxiliary heating laser because the laser is positioned at the periphery.
The cores of the multicore fiber are too close to each other, which tends to have a large effect on each other, and when the optical fields are superimposed for a better far field, the distance between the individual doped cores is preferably larger than 15 microns, more preferably larger than 30 microns, so that the laser forms a controllable laser processing optical field in the far field.
In some embodiments, the laser system (as shown in fig. 1) adopts a design of 13 semiconductor chips, and any number of COS chips can be designed according to the requirement, and a high-power palladium strip can be directly used;
in some embodiments, a semiconductor chip with a wavelength of 976nm is used in a pumping unit module in the laser system, and the semiconductor chips with different wavelengths, such as 915nm and the like, can be matched according to different types of gain fibers;
in some embodiments, about 20m gain fiber (YDF) is used in the laser system, and different lengths of gain fiber can be designed according to the absorptivity of the gain fiber;
in some embodiments, the laser system in which the fiber gain cavity outputs 1070nm laser light, since the active fiber employed in the fiber gain cavity is Yb, but any kind of wavelength is contemplated, so that Er, Th, Ho, doped fiber, or some other combination may be used, even fiber lasers shifted in output by nonlinear optical crystals, raman fibers, etc.;
in some embodiments, the laser system adopts a fiber-optic connector (SMA) as an output end coupling device, and can also be replaced by other fiber-optic coupling devices;
the inner base of the pumping unit module is stepped;
in some embodiments, the semiconductor chips in the laser system adopt a stepped correlation array layout, the semiconductor chips and the reflectors are mounted in a stepped substrate, each semiconductor chip and the corresponding reflector are mounted on an independent step of the semiconductor chip, and a reasonable step height difference is formed between every two steps, so that the reflectors are not blocked with each other, and other forms of layout designs such as single row and the like can be selected according to requirements;
in some embodiments, the laser system integrates the power supply control module, but the power supply control module may be designed separately from the optical portion to supply power to the optical portion in the form of a cable.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The utility model provides a fiber laser system, includes fiber laser, including pumping unit module, gain chamber unit module, output cable, its characterized in that: the pumping unit module is composed of N +1 semiconductor chips and corresponding coupling structures, the gain cavity unit comprises gain optical fibers, and pumping light is coupled and focused into the input end face of the gain optical fibers in the gain cavity unit module through the coupling structures.
2. The fiber laser system of claim 1, comprising a split-chamber cooling platform, the split-chamber cooling platform comprising a water-cooled platform divided by a split-chamber partition into a pumping unit region and a gain chamber unit region.
3. The fiber laser system of claim 2, the split-bin cooling platform being a sealable structure, wherein the pump unit regions are treated in a sealable manner, the pump unit modules being designed to pump the pump unit regions in the split-bin sealable cooling platform.
4. The fiber laser system of claim 1, comprising a power supply control module consisting of a constant current driving power supply and a control system for supplying power to the semiconductor chip in the pumping unit module, wherein the control system consists of a hardware system and a software system; the output optical cable is a water-cooled QBH optical cable with a cladding light stripping function, and the input end of the water-cooled QBH optical cable is inserted into the optical fiber connector and is in butt coupling with the output end of the gain optical fiber in the gain cavity unit module.
5. The fiber laser system of claim 1, the pump unit region comprising N +1 fast axis collimating lenses, N +1 slow axis collimating lenses, N +1 mirrors, a fast axis coupling lens, and a slow axis coupling lens cooperating therewith.
6. The fiber laser system of claim 1, wherein 20m YDF gain fiber is used, and wherein the semiconductor chip is arranged in a stepped double-row correlation array.
7. The fiber laser system of claim 1, the semiconductor chip being a COS chip or a palladium strip.
8. The fiber laser system of claim 5, wherein two wavelengths of semiconductor chips are used in addition to the visible light semiconductor chip for indication, the first laser wavelength is a pump laser of the gain medium, the second laser wavelength is an auxiliary heating laser that is not absorbed by the gain medium, the N semiconductor chips are divided into N (1) first wavelength semiconductor chips and N (2) second wavelength semiconductor chips, the N mirrors are also divided into N (1) first wavelength mirrors and N (2) second wavelength mirrors, the first wavelength semiconductor chips correspond to the first wavelength mirror, the second wavelength semiconductor chips correspond to the second wavelength mirror, wherein the first wavelength mirror is a first dichroic mirror that reflects the first wavelength and transmits the second wavelength, the second wavelength mirror is a second dichroic mirror that reflects the second wavelength and transmits the first wavelength, viewed in the direction of the light, each second mirror is arranged in overlapping relation with a first mirror, the first wavelength mirrors being offset relative to each other and the second wavelength mirrors being offset relative to each other.
9. The fiber laser system of claim 8, wherein the laser is a multi-core fiber laser, the gain fiber has a plurality of doped cores in a larger inner cladding, such that each first-wavelength laser is coupled to a corresponding one of the doped cores through the coupling structure, the number of the first-wavelength semiconductor chips is N (1) ═ N (2) +1, the number of the doped cores is also N (1) ═ N (2) +1, the number of the second-wavelength semiconductor chips is N (2), the doped cores have a central core and N (2) surrounding cores, and the N (2) second-wavelength lasers emitted from the second-wavelength semiconductor chips are input to the N surrounding core positions through the coupling structure.
10. The method of claim 9, wherein the fiber laser further comprises a focusing lens set, the driving current of each semiconductor chip is independently adjustable, the light intensity output by the first wavelength semiconductor chip corresponding to the center doped fiber core is I (1), the light intensity output by the first wavelength semiconductor chip corresponding to the peripheral doped fiber core is I (2), the intensities of I (1) and I (2) are respectively adjusted, a CCD structure is disposed at the output end of the output cable of the multicore fiber, the driving current of each semiconductor chip is adjusted, so that the light intensities of I (1) and I (2) are changed, the laser superimposed field of the output cable of the multicore fiber laser is in accordance with gaussian distribution, when the light intensity field of the CCD is in accordance with gaussian distribution, the driving current of each semiconductor chip at that time is recorded, and the corresponding current is used in processing.
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