CN110265285A - The method for oxidation of semiconductor substrate and the manufacturing method of backside-illuminated sensor chip - Google Patents
The method for oxidation of semiconductor substrate and the manufacturing method of backside-illuminated sensor chip Download PDFInfo
- Publication number
- CN110265285A CN110265285A CN201910345525.1A CN201910345525A CN110265285A CN 110265285 A CN110265285 A CN 110265285A CN 201910345525 A CN201910345525 A CN 201910345525A CN 110265285 A CN110265285 A CN 110265285A
- Authority
- CN
- China
- Prior art keywords
- semiconductor substrate
- oxidation
- halogen
- gas
- containing gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 230000003647 oxidation Effects 0.000 title claims abstract description 22
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000007789 gas Substances 0.000 claims abstract description 39
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 28
- 150000002367 halogens Chemical class 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 229910001507 metal halide Inorganic materials 0.000 claims abstract description 15
- 150000005309 metal halides Chemical class 0.000 claims abstract description 15
- 239000012535 impurity Substances 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002244 precipitate Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000009792 diffusion process Methods 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 9
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 5
- ULLRFUHXXXZSCT-UHFFFAOYSA-N [O].[O].Cl Chemical compound [O].[O].Cl ULLRFUHXXXZSCT-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 5
- 239000002344 surface layer Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018965 MCl2 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Abstract
The present invention provides the manufacturing methods of a kind of method for oxidation of semiconductor substrate and backside-illuminated sensor chip.The method for oxidation of the semiconductor substrate includes the following steps: to carry out wet-oxygen oxidation to semiconductor substrate using the gas of containing water vapor and oxygen, in semiconductor substrate surface formation oxide layer；Use halogen-containing gas simultaneously in above-mentioned steps, halogens in the halogen-containing gas is after vapor ionizes, in conjunction with the metal impurities in atmosphere, metal halide precipitate is formed on the surface of the oxide layer, metal impurities is inhibited to spread to semiconductor substrate.
Description
Technical field
The present invention relates to the method for oxidation and back-illuminated type of field of semiconductor technology more particularly to a kind of semiconductor substrate biographies
The manufacturing method of sensor chip.
Background technique
When wafer is in being thermally oxidized diffusion process, since diffusion furnace temperature is higher, the metal contained in components in stove
It can be carried by the reaction gas in diffusion furnace in gas that is upper and riddling furnace chamber.These trace meters reach crystal column surface
Afterwards, it can be easy to being diffused into silicon substrate and in the chip device formed in the condition of high temperature of hot processing procedure.It is sensed in back-illuminated type
It is particularly sensitive to the diffusion of this microtechnique in the preparation process of device, generation when these metals will lead to the operation of device in future
Dark current, it is serious to form white point in the image of shooting.Therefore, how trace meter to be inhibited to be diffused into substrate, is existing
There is the problem of technology urgent need to resolve.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of method for oxidation of semiconductor substrate and back-illuminated type to sense
The manufacturing method of device chip.
To solve the above-mentioned problems, the present invention provides a kind of method for oxidation of semiconductor substrate, include the following steps: to adopt
Wet-oxygen oxidation is carried out to semiconductor substrate with the gas of containing water vapor and oxygen, forms oxide layer in semiconductor substrate surface；?
Halogen-containing gas is used in above-mentioned steps simultaneously, the halogens in the halogen-containing gas is after vapor ionizes, with gas
Metal impurities in atmosphere combine, and form metal halide precipitate on the surface of the oxide layer, inhibit metal impurities to semiconductor
Substrate diffusion.
Optionally, the halogen-containing gas is selected from or mixtures thereof one of hydrogen chloride, hydrogen bromide, chlorine, bromine gas.
Optionally, the flow of the halogen-containing gas gas is the 1/5 to 1/20 of oxygen flow.
Optionally, further comprise following steps: using hydrochloric acid dioxygen water mixed liquid cleaning oxidation layer surface to remove gold
Belong to halide precipitate.
The present invention also provides a kind of manufacturing method of backside-illuminated sensor chip, include the following steps: to provide semiconductor
Substrate；Wet-oxygen oxidation is carried out to semiconductor substrate using the gas of containing water vapor and oxygen, forms oxygen in semiconductor substrate surface
Change layer；Use halogen-containing gas simultaneously in above-mentioned steps, the halogens in the halogen-containing gas is ionized through vapor
Afterwards, in conjunction with the metal impurities in atmosphere, the oxide layer surface formed metal halide precipitate, inhibit metal impurities to
Semiconductor substrate diffusion.
Optionally, the oxide layer is used to form the gate oxide or gate spacer oxide of backside-illuminated sensor chip
Layer.
The present invention by using halogen-containing gas simultaneously in thermal oxide diffusion process, with the reaction gas in use diffusion furnace
The minor metallic element that body carries reacts, and generates metal halide.The molecule of metal halide is larger, can rest on wafer
Surface solves pollution problem of the metal for wafer.
Detailed description of the invention
It is the implementation steps schematic diagram of present embodiment shown in attached drawing 1.
It is the process schematic representation of the embodiment of the invention shown in attached drawing 2A to attached drawing 2C.
Specific embodiment
Method for oxidation to semiconductor substrate provided by the invention and backside-illuminated sensor chip with reference to the accompanying drawing
The specific embodiment of manufacturing method elaborates.
It is the implementation steps schematic diagram of present embodiment shown in attached drawing 1, comprising: step S10 provides semiconductor lining
Bottom；Step S11 carries out wet-oxygen oxidation to semiconductor substrate using the gas of containing water vapor and oxygen, in semiconductor substrate surface
Oxide layer is formed, and uses halogen-containing gas simultaneously, forms metal halide precipitate on the surface of the oxide layer；Step S12,
Use hydrochloric acid dioxygen water mixed liquid cleaning oxidation layer surface to remove metal halide precipitate.
Shown in attached drawing 2A, with reference to step S10, semiconductor substrate 20 is provided.In this embodiment, the semiconductor
Substrate 20 is monocrystalline substrate.In other specific embodiments, which is also possible to germanium, germanium silicon, polysilicon
Etc. the substrate that can be oxidized in oxidizing atmosphere of any one.
Shown in attached drawing 2B, with reference to step S11, wet oxygen is carried out to semiconductor substrate 10 using the gas of containing water vapor and oxygen
Oxidation forms oxide layer 11 on 10 surface of semiconductor substrate, and uses halogen-containing gas simultaneously, in the surface shape of the oxide layer
At metal halide precipitate 12.The oxide layer 11 is used to form the gate oxide or gate spacers of backside-illuminated sensor chip
Oxide skin(coating).
In this embodiment, the halogen-containing gas is hydrogen chloride.It is described in other specific embodiments
Halogen-containing gas can be or mixtures thereof one of hydrogen chloride, hydrogen bromide, chlorine, bromine gas.In the halogen-containing gas
Halogens is after vapor ionizes, and in conjunction with the metal impurities in atmosphere, forms metal halogen on the surface of the oxide layer
Compound precipitating.By taking hydrogen chloride as an example, reaction equation is as follows:
M+2HCl→MCl2+H2(gas)
Wherein M is metal impurities, such as Al, Zn, Fe, Ni, Sn and Pb etc., from the components of diffusion furnace middle benefit gas,
The metal contained in components can be carried by the reaction gas in diffusion furnace in gas that is upper and riddling furnace chamber.Metal impurities with
Halide combines rear volume to become larger, and diffusion velocity is slack-off, can rest on the surface of oxide layer 11, inhibits metal impurities to semiconductor
Substrate 10 is spread.
The flow of the halogen-containing gas gas is preferably the 1/5 to 1/20 of oxygen flow, to control the hydrogen that reaction generates
Tolerance.It will not influence reacting for oxygen and silicon.
Shown in attached drawing 2C, step S12 uses hydrochloric acid dioxygen water mixed liquid cleaning 11 surface of oxide layer to remove metal halide
Object precipitating 12.Metal halide precipitate 12 on 11 surface of oxide layer, does not diffuse into semiconductor substrate 10, if necessary
Further removal, can use this step.Metal halide precipitate 12, can be by acids such as hydrochloric acid due to being metallic compound
Matter cleaning removal, and hydrochloric acid can't cause to corrode to oxide layer 11.In other specific embodiments, pass through grinding etc.
Mode can also remove metal halide precipitate 12.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (6)
1. a kind of method for oxidation of semiconductor substrate, includes the following steps:
Wet-oxygen oxidation is carried out to semiconductor substrate using the gas of containing water vapor and oxygen, is formed and is aoxidized in semiconductor substrate surface
Layer；It is characterized by:
Use halogen-containing gas simultaneously in above-mentioned steps, the halogens in the halogen-containing gas is ionized through vapor
Afterwards, in conjunction with the metal impurities in atmosphere, the oxide layer surface formed metal halide precipitate, inhibit metal impurities to
Semiconductor substrate diffusion.
2. the method for oxidation of semiconductor substrate according to claim 1, which is characterized in that the halogen-containing gas is selected from
Or mixtures thereof one of hydrogen chloride, hydrogen bromide, chlorine, bromine gas.
3. the method for oxidation of semiconductor substrate according to claim 1, which is characterized in that the halogen-containing gas gas
Flow is the 1/5 to 1/20 of oxygen flow.
4. the method for oxidation of semiconductor substrate according to claim 1, which is characterized in that further comprise following steps:
Use hydrochloric acid dioxygen water mixed liquid cleaning oxidation layer surface to remove metal halide precipitate.
5. a kind of manufacturing method of backside-illuminated sensor chip, includes the following steps:
Semiconductor substrate is provided；
Wet-oxygen oxidation is carried out to semiconductor substrate using the gas of containing water vapor and oxygen, is formed and is aoxidized in semiconductor substrate surface
Layer；It is characterized by:
Use halogen-containing gas simultaneously in above-mentioned steps, the halogens in the halogen-containing gas is ionized through vapor
Afterwards, in conjunction with the metal impurities in atmosphere, the oxide layer surface formed metal halide precipitate, inhibit metal impurities to
Semiconductor substrate diffusion.
6. the manufacturing method of backside-illuminated sensor chip according to claim 5, which is characterized in that the oxide layer by with
In the gate oxide or gate spacer oxide layer that form backside-illuminated sensor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910345525.1A CN110265285A (en) | 2019-04-26 | 2019-04-26 | The method for oxidation of semiconductor substrate and the manufacturing method of backside-illuminated sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910345525.1A CN110265285A (en) | 2019-04-26 | 2019-04-26 | The method for oxidation of semiconductor substrate and the manufacturing method of backside-illuminated sensor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110265285A true CN110265285A (en) | 2019-09-20 |
Family
ID=67913972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910345525.1A Pending CN110265285A (en) | 2019-04-26 | 2019-04-26 | The method for oxidation of semiconductor substrate and the manufacturing method of backside-illuminated sensor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110265285A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002313787A (en) * | 2001-04-13 | 2002-10-25 | Tokyo Electron Ltd | Method for cleaning quartz product in heat treatment system and heat treatment method |
| CN101214487A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning cavity of semiconductor etching equipment |
| CN102403272A (en) * | 2010-09-08 | 2012-04-04 | 北大方正集团有限公司 | Preparation method for high voltage complementary metal oxide semiconductor |
| CN103928367A (en) * | 2014-03-20 | 2014-07-16 | 上海华力微电子有限公司 | Furnace tube device and method for reducing Cu pollution in furnace tube process |
| CN104392919A (en) * | 2014-11-19 | 2015-03-04 | 上海华力微电子有限公司 | Silicon base surface treatment method for NMOS element and manufacturing method of NMOS element |
| CN105047553A (en) * | 2015-08-26 | 2015-11-11 | 上海华力微电子有限公司 | Surface treatment method for depositing high-dielectric value gate medium layer |
-
2019
- 2019-04-26 CN CN201910345525.1A patent/CN110265285A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002313787A (en) * | 2001-04-13 | 2002-10-25 | Tokyo Electron Ltd | Method for cleaning quartz product in heat treatment system and heat treatment method |
| CN101214487A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning cavity of semiconductor etching equipment |
| CN102403272A (en) * | 2010-09-08 | 2012-04-04 | 北大方正集团有限公司 | Preparation method for high voltage complementary metal oxide semiconductor |
| CN103928367A (en) * | 2014-03-20 | 2014-07-16 | 上海华力微电子有限公司 | Furnace tube device and method for reducing Cu pollution in furnace tube process |
| CN104392919A (en) * | 2014-11-19 | 2015-03-04 | 上海华力微电子有限公司 | Silicon base surface treatment method for NMOS element and manufacturing method of NMOS element |
| CN105047553A (en) * | 2015-08-26 | 2015-11-11 | 上海华力微电子有限公司 | Surface treatment method for depositing high-dielectric value gate medium layer |
Non-Patent Citations (1)
| Title |
|---|
| 张亚非等著: "《集成电路制造技术》", 31 December 2018 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10529585B2 (en) | Dry stripping of boron carbide hardmask | |
| TW440964B (en) | Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process | |
| TW201331997A (en) | Method of depositing a silicon germanium tin layer on a substrate | |
| EP0964437A3 (en) | Process for producing semiconductor integrated circuit device and semiconductor integrated circuit device | |
| JPS5817615A (en) | Method of bonding metal and silicon with low pressure cvd to form metal silicide | |
| JP2004531079A5 (en) | ||
| JP2001517736A (en) | CVD chamber inner lining | |
| WO2018025647A1 (en) | Semiconductor device, ph sensor, biosensor, and method for producing semiconductor device | |
| CN110265285A (en) | The method for oxidation of semiconductor substrate and the manufacturing method of backside-illuminated sensor chip | |
| US20010016426A1 (en) | Titanium dioxide layer serving as a mask and its removed method | |
| US8466058B2 (en) | Process to remove Ni and Pt residues for NiPtSi applications using chlorine gas | |
| JP2007189051A (en) | Semiconductor device, manufacturing method therefor, and dicing blade | |
| JP3753805B2 (en) | Semiconductor sample decomposition apparatus and sample decomposition method | |
| Ammar | Prediction of pathways for the dissolution of iron | |
| Fabry et al. | Test methods for measuring bulk copper and nickel in heavily doped p-type silicon wafers | |
| WO2007013644A1 (en) | Process for producing polycrystalline silicon | |
| JP2001050923A (en) | Hydrogen-gas detecting element | |
| JP2000058532A (en) | Method and device for processing semiconductor and cleaning method for the device | |
| CN110061067A (en) | It is a kind of can parallel combination rectifier diode chip manufacturing process | |
| JPH03218015A (en) | Cleaning fluid for semiconductor substrate and manufacture of semiconductor device | |
| JP2698298B2 (en) | Trichloroethane cleaning method for core tube of heat treatment furnace | |
| TW201233989A (en) | Method of detecting leakage of water, chlorosilane/hydrogen reductively reacting apparatus, and production method by using the same apparatus | |
| JP3074938B2 (en) | Carbon content measuring device | |
| JP3156925B2 (en) | Cold wall type single-wafer lamp heating furnace | |
| JPH04361527A (en) | Surface processing method and application of semiconductor heat treatment jig |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190920 |