CN110262197B - Black photoresistance substrate fog-like cleaning method - Google Patents
Black photoresistance substrate fog-like cleaning method Download PDFInfo
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- CN110262197B CN110262197B CN201910406978.0A CN201910406978A CN110262197B CN 110262197 B CN110262197 B CN 110262197B CN 201910406978 A CN201910406978 A CN 201910406978A CN 110262197 B CN110262197 B CN 110262197B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a black photoresistance substrate fog-like cleaning method, which comprises the following steps: providing a black light resistance substrate, wherein the black light resistance substrate comprises a substrate layer and a black light resistance pattern layer formed on the substrate layer, the black light resistance pattern layer is provided with a hollow area and a light resistance area, and black light resistance materials for manufacturing the black light resistance pattern layer contain carbon black; and flushing the exposed part of the substrate layer in the hollow area by adopting fluid, wherein the stripping force of the fluid on the residual carbon black on the substrate layer is greater than the adhesive force of the carbon black on the substrate layer. The cleaning method can effectively improve the fog phenomenon of the black photoresist substrate.
Description
Technical Field
The invention relates to a substrate cleaning technology, in particular to a black photoresistance substrate fog-like cleaning method.
Background
A black photoresist is a photoresist material used for manufacturing a light shielding pattern, and is often used in optoelectronic products, such as a black matrix of a display screen, a black light shielding ring of a lens, etc., and is also often used in a photolithography process to selectively etch a circuit layer or other functional layers to manufacture a desired circuit pattern layer or other functional pattern layers, such as a circuit of a chip, a TFT of a display screen, etc.
As shown in fig. 1, the black photoresist substrate includes a substrate layer 1 and a black photoresist pattern layer 2 formed on the substrate layer 1, and the manufacturing steps are as follows: coating a black photoresist material on the substrate layer 1, pre-baking the black photoresist material to form a black photoresist layer, and exposing and developing the black photoresist layer to form the black photoresist pattern layer 2. The exposed and removed area of the black photoresist layer forms a hollow area 21 of the black photoresist pattern layer 2, and the unexposed and left area of the black photoresist layer forms a photoresist area 22 of the black photoresist pattern layer 2.
The substrate layer 1 may have a haze phenomenon at the exposed portion in the hollow area 21. In the prior art, technicians think that the cause of the fogging phenomenon is: after the black photoresist layer is exposed and developed to form the black photoresist pattern layer 2, the developing solution cannot be removed in time to corrode the exposed part of the substrate layer 1 in the hollow area 21, so that the surface of the substrate layer 1 at the exposed part is uneven, and diffuse reflection is generated on light. Therefore, in the prior art, technicians generally improve the fogging by shortening the exposure and development time or changing to a developer having a low corrosive force to the substrate 1, but the improvement effect of the fogging has been far from satisfactory.
The inventor creatively discovers that: the fogging phenomenon is not caused by corrosion of the developing solution on the substrate layer 1, but the black photoresist material contains carbon black 23, the adhesive force of the carbon black 23 on the substrate layer 1 is large, after exposure, development and cleaning, the carbon black 23 is remained on the surface of the exposed part of the substrate layer 1 in the hollow area 21, and the remaining carbon black 23 causes the fogging phenomenon.
Disclosure of Invention
In order to solve the above-mentioned deficiencies of the prior art, the present invention provides a method for cleaning black photoresist substrate with haze, which can effectively improve the haze of black photoresist substrate.
The technical problem to be solved by the invention is realized by the following technical scheme:
a black light resistance substrate fog cleaning method comprises the following steps:
providing a black light resistance substrate, wherein the black light resistance substrate comprises a substrate layer and a black light resistance pattern layer formed on the substrate layer, the black light resistance pattern layer is provided with a hollow area and a light resistance area, and black light resistance materials for manufacturing the black light resistance pattern layer contain carbon black;
and flushing the exposed part of the substrate layer in the hollow area by adopting fluid, wherein the stripping force of the fluid on the residual carbon black on the substrate layer is greater than the adhesive force of the carbon black on the substrate layer.
Further, the fluid is a liquid or a gas.
Further, the fluid is at high or ultra high pressure.
Further, the pressure of the fluid is 70MPa-150MPa.
Further, the manufacturing steps of the black photoresist substrate are as follows: coating the black photoresist material on the substrate layer, pre-baking the black photoresist material to form a black photoresist layer, and exposing and developing the black photoresist layer to form the black photoresist pattern layer.
Further, the hollow area of the black photoresist pattern layer corresponds to the area of the black photoresist layer that has been removed by exposure, and the photoresist area of the black photoresist pattern layer corresponds to the area of the black photoresist layer that remains without exposure.
Further, after the washing the exposed portion of the substrate layer in the hollow area with the fluid, the method further includes:
and detecting whether the carbon black remained on the substrate layer is washed clean.
Further, the step of detecting whether the carbon black remained on the substrate layer is washed clean is as follows:
locally wiping the exposed part of the substrate layer in the hollow area;
judging whether a color fault exists between the wiping part and the non-wiping part of the substrate layer;
if no color fault exists, the carbon black remained on the substrate layer is washed clean.
Further, it is determined whether or not the color tomographic image is present under the conditions of the black background and the illumination of 2000.
Further, the step of detecting whether the carbon black remained on the substrate layer is washed clean is as follows:
wiping the exposed part of the substrate layer in the hollow area;
manufacturing an inorganic non-metal oxide transparent layer in the exposed part of the substrate layer;
judging whether the exposed part of the substrate layer has color difference or not;
if no color difference exists, the carbon black remained on the substrate layer is washed clean.
The invention has the following beneficial effects: the cleaning method is based on the creative discovery that the haze phenomenon of the black light resistance substrate is caused by the carbon black residue in the black light resistance material, and the haze phenomenon of the black light resistance substrate can be effectively improved by adopting high-pressure or ultrahigh-pressure fluid to wash the carbon black residue on the substrate layer.
Drawings
FIG. 1 is a schematic diagram of a conventional black photoresist substrate;
FIG. 2 is a block diagram of the steps of the black photoresist substrate haze cleaning method provided by the present invention.
Detailed Description
The present invention will be described in detail below with reference to the drawings and examples.
As shown in fig. 2, a method for cleaning black photoresist substrate with mist includes the following steps:
s101: providing a black photoresist substrate shown in fig. 1, wherein the black photoresist substrate comprises a substrate layer 1 and a black photoresist pattern layer 2 formed on the substrate layer 1, the black photoresist pattern layer 2 has a hollow area 21 and a photoresist area 22, and black photoresist material for manufacturing the black photoresist pattern layer 2 contains carbon black 23;
the manufacturing steps of the black photoresist substrate are as follows: coating a black photoresist material on the substrate layer 1, pre-baking the black photoresist material to form a black photoresist layer, and exposing and developing the black photoresist layer to form the black photoresist pattern layer 2. Wherein the hollow area 21 of the black photoresist pattern layer 2 corresponds to the area of the black photoresist layer that has been exposed and removed, and the photoresist area 22 of the black photoresist pattern layer 2 corresponds to the area of the black photoresist layer that remains unexposed; light can pass through the hollow area 21 but not pass through the photoresist area 22.
Wherein, the substrate layer 1 has a fog phenomenon at the exposed part in the hollow area 21. In the prior art, technicians think that the cause of the fogging phenomenon is: after the black photoresist layer is exposed and developed to form the black photoresist pattern layer 2, the developing solution cannot be removed in time to corrode the exposed part of the substrate layer 1 in the hollow area 21, so that the surface of the substrate layer 1 at the exposed part is uneven, and diffuse reflection is generated on light. Therefore, in the prior art, technicians generally reduce the exposure and development time or change the developing solution with low corrosion force to the substrate layer 1 to improve the fogging phenomenon, but the improvement effect of the fogging phenomenon is not ideal.
The inventor creatively discovers that: the fogging phenomenon is not caused by corrosion of the developing solution on the substrate layer 1, but the black photoresist material contains carbon black 23, the adhesive force of the carbon black 23 on the substrate layer 1 is large, after exposure, development and cleaning, the carbon black 23 is remained on the surface of the exposed part of the substrate layer 1 in the hollow area 21, and the remaining carbon black 23 causes the fogging phenomenon.
The substrate layer 1 may be a glass substrate, a color filter, a silicon wafer, an optical lens, or the like.
S102: washing the exposed part of the substrate layer 1 in the hollow-out area 21 with a fluid, wherein the peeling force of the fluid on the carbon black 23 remained on the substrate layer 1 is larger than the adhesive force of the carbon black 23 on the substrate layer 1;
preferably, in this step S102, the fluid is a liquid or a gas, having a high or ultra-high pressure between 70Mpa and 150Mpa.
After the step of flushing the exposed portion of the substrate layer 1 in the hollow area 21 with a fluid, the method further comprises:
s103: it is checked whether the carbon black 23 remaining on the substrate layer 1 has been washed out.
In one embodiment, the step of detecting whether the carbon black 23 remained on the substrate layer 1 is washed clean is as follows:
locally wiping the exposed part of the substrate layer 1 in the hollow area 21 by using dust-free cloth, and wiping twice or so;
under the conditions of a black background and about 2000 illumination, whether a color fault exists between a wiping part and a non-wiping part of the substrate layer 1 is observed and judged by naked eyes;
if no color faults are present, the carbon black 23 remaining on the substrate layer 1 is rinsed out.
In another embodiment, the step of detecting whether the carbon black 23 remaining on the substrate layer 1 has been washed clean is as follows:
wiping the exposed part of the substrate layer 1 in the hollow area 21 by using a brush;
making an inorganic non-metal oxide transparent layer in the exposed part of the substrate layer 1, wherein the inorganic non-metal oxide transparent layer can be but is not limited to a SiO2 layer;
observing and judging whether the exposed part of the substrate layer 1 has color difference by naked eyes;
if no color difference exists, the carbon black 23 remaining on the substrate layer 1 is washed out.
Of course, the above two detection methods can also be used simultaneously to detect whether the carbon black 23 remaining on the substrate layer 1 is washed clean.
Based on the creative discovery that the haze phenomenon of the black photoresist substrate is caused by the residue of the carbon black 23 in the black photoresist material, the cleaning method can effectively improve the haze phenomenon of the black photoresist substrate by adopting high-pressure or ultrahigh-pressure fluid to flush the carbon black 23 residue on the substrate layer 1.
The above-mentioned embodiments only express the embodiments of the present invention, and the description is more specific and detailed, but not understood as the limitation of the patent scope of the present invention, but all the technical solutions obtained by using the equivalent substitution or the equivalent transformation should fall within the protection scope of the present invention.
Claims (8)
1. A black light resistance substrate fog cleaning method is characterized by comprising the following steps:
providing a black light resistance substrate, wherein the black light resistance substrate comprises a substrate layer and a black light resistance pattern layer formed on the substrate layer, the black light resistance pattern layer is provided with a hollow area and a light resistance area, and black light resistance materials for manufacturing the black light resistance pattern layer contain carbon black;
flushing the exposed part of the substrate layer in the hollow area by using fluid, wherein the stripping force of the fluid on the residual carbon black on the substrate layer is greater than the adhesive force of the carbon black on the substrate layer;
the fluid is high pressure or ultrahigh pressure, and the pressure is 70-150 MPa.
2. The method of claim 1, wherein the fluid is a liquid or a gas.
3. The method for cleaning a black photoresist substrate in a mist form according to claim 1, wherein the black photoresist substrate is produced by the steps of: coating the black photoresist material on the substrate layer, pre-baking the black photoresist material to form a black photoresist layer, and exposing and developing the black photoresist layer to form the black photoresist pattern layer.
4. The method of claim 3, wherein the area of the black photoresist pattern layer corresponding to the area of the black photoresist layer that has been removed by exposure is the area of the black photoresist layer that is left unexposed.
5. The method of claim 1, further comprising, after rinsing the exposed portion of the substrate layer in the recessed area with a fluid:
and detecting whether the carbon black remained on the substrate layer is washed clean.
6. A method for cleaning a black photoresist substrate according to claim 5, wherein the step of detecting whether the carbon black remaining on the substrate layer has been washed clean is as follows:
locally wiping the exposed part of the substrate layer in the hollow area;
judging whether a color fault exists between the wiping part and the non-wiping part of the substrate layer;
if no color fault exists, the carbon black remained on the substrate layer is washed clean.
7. The method of cleaning a black resist substrate in a mist form according to claim 6, wherein the judgment as to whether or not the color fault exists is made under a black background and an illuminance of 2000.
8. A method for cleaning a black photoresist substrate in a haze manner according to any one of claims 5 to 7, wherein the step of detecting whether the carbon black remaining on the substrate layer has been washed clean is as follows:
wiping the exposed part of the substrate layer in the hollow area;
manufacturing an inorganic non-metal oxide transparent layer in the exposed part of the substrate layer;
judging whether the exposed part of the substrate layer has color difference or not;
if no color difference exists, the carbon black remained on the substrate layer is washed clean.
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| CN201910406978.0A CN110262197B (en) | 2019-05-15 | 2019-05-15 | Black photoresistance substrate fog-like cleaning method |
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| CN201910406978.0A CN110262197B (en) | 2019-05-15 | 2019-05-15 | Black photoresistance substrate fog-like cleaning method |
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| CN110262197B true CN110262197B (en) | 2023-03-10 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW446856B (en) * | 1999-04-01 | 2001-07-21 | United Microelectronics Corp | A cleaning method of removing exposed photo-resists on a semiconductor wafer |
| CN1892436A (en) * | 2005-06-30 | 2007-01-10 | 台湾积体电路制造股份有限公司 | Immersion lithography method and processing system |
| CN101055849A (en) * | 2006-04-12 | 2007-10-17 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method for removing the optical resistance residue and dual enchasing technology of the copper making process |
| CN101071273A (en) * | 2006-05-09 | 2007-11-14 | 虹创科技股份有限公司 | Method for manufacturing thin film pattern layer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8053368B2 (en) * | 2008-03-26 | 2011-11-08 | International Business Machines Corporation | Method for removing residues from a patterned substrate |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW446856B (en) * | 1999-04-01 | 2001-07-21 | United Microelectronics Corp | A cleaning method of removing exposed photo-resists on a semiconductor wafer |
| CN1892436A (en) * | 2005-06-30 | 2007-01-10 | 台湾积体电路制造股份有限公司 | Immersion lithography method and processing system |
| CN101055849A (en) * | 2006-04-12 | 2007-10-17 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method for removing the optical resistance residue and dual enchasing technology of the copper making process |
| CN101071273A (en) * | 2006-05-09 | 2007-11-14 | 虹创科技股份有限公司 | Method for manufacturing thin film pattern layer |
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