CN106597803A - Attenuated phase shift mask and manufacturing method thereof - Google Patents
Attenuated phase shift mask and manufacturing method thereof Download PDFInfo
- Publication number
- CN106597803A CN106597803A CN201510672845.XA CN201510672845A CN106597803A CN 106597803 A CN106597803 A CN 106597803A CN 201510672845 A CN201510672845 A CN 201510672845A CN 106597803 A CN106597803 A CN 106597803A
- Authority
- CN
- China
- Prior art keywords
- layer
- phase shift
- shift mask
- light shield
- shading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Abstract
The invention provides an attenuated phase shift mask and a manufacturing method thereof and relates to the technical field of semiconductors. The method comprises the steps of providing a transparent substrate and forming a graphical phase shift layer and a shading layer on the phase shift layer in an edge region on the transparent substrate; and forming a non-conductive oxide layer on the surface of the shading layer. According to the attenuated phase shift mask and the manufacturing method thereof, the defect problem of adhesion of small particles, caused by electrostatic adsorption, of the attenuated phase shift mask in a specific cleaning machine can be solved through oxidizing the conductive shading layer on the surface of the attenuated phase shift mask into a non-conductive oxide, so that the attenuated phase shift mask can be permitted to be further cleaned on the cleaning machine, the utilization rate of the machine is improved, the machine does not need to be replaced and the process complexity and the cost do not need to be increased.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of attenuation phase shift mask and
Its manufacture method.
Background technology
In order to improve the rate respectively of photoetching, phase shifting mask (PSM) technology has been introduced.Wherein
A kind of conventional phase-shift mask is attenuation phase shift mask, and which adopts the thin film with certain light transmittance to make
For phase shift layer, the thin film is covered in for forming the adjacent slits of pattern, is covered with constituting
Masterplate figure, and make the transmitted light by the phase shift layer anti-phase.As shown in figure 1, it illustrates
The general configuration on attenuation phase shift mask cross section that manufacture is completed, the attenuation phase shift mask pass through
The translucent molybdenum silicides (phase shift layer) 2 that etching is covered on the quartz glass 1 of printing opacity are formed
Final graphics, while periphery must retain fully opaque layers of chrome 3 as light shield layer.
Mask is the template in semiconductor manufacturing for exposure, and which does not allow to affect exposure results
Defect is present.Thus, after the completion of mask manufacture, in addition it is also necessary to carry out a series of defect inspections, repair
The flow process mended and be all verified, while in order to ensure cleaning, mask will on stream can be by
Repeated washing.
In 28 nanometers of attenuation phase shift mask defect inspection process, discovery has a kind of specific type
Defect frequently occurs, and this defect shows as having a large amount of little particles to be attached on along layers of chrome edge
Light area, as shown in Figure 2.This defect cannot be cleaned removing, although can with can be repaired,
But due to the large number of impact production cycle.
Therefore, it is to solve above-mentioned technical problem, it is necessary to propose a kind of new attenuation phase shift mask
And its manufacture method.
The content of the invention
For the deficiencies in the prior art, the present invention proposes a kind of attenuation phase shift mask and its manufacturer
Method, can avoid attenuation phase shift mask from aforementioned drawback occur, not affect the generation week of phase-shift mask
Phase.
One embodiment of the present of invention provides a kind of manufacture method of attenuation phase shift mask, the side
Method includes：Transparent substrates are provided, patterned phase shift layer is formed on the transparent substrates, with
And the light shield layer on the phase shift layer of marginal area；Form non-conductive in the shading layer surface
Oxide layer.
Exemplarily, the shading layer surface is processed with the light shield layer by oxygen plasma
Surface forms oxide layer.
Exemplarily, by shading layer surface described in ultraviolet light with the shading layer surface
Form oxide layer.
Exemplarily, the phase shift layer is molybdenum silicides, and the light shield layer is layers of chrome, described
Oxide of the oxide layer for chromium.
An alternative embodiment of the invention provides a kind of manufacture method of attenuation phase shift mask, described
Method includes：Transparent substrates are provided, phase shift layer and light shield layer are formed on the transparent substrates；
The phase shift layer and light shield layer are carried out for the first time graphically, so that the phase shift layer forms predetermined
Figure；Nonconducting oxide layer is formed in the shading layer surface；To the phase shift layer and shading
Layer carries out second graphical, light shield layer and oxygen with removal on the phase shift layer of zone line
Change layer, retain light shield layer and oxide layer on the phase shift layer of marginal area.
Exemplarily, the shading layer surface is processed with the light shield layer by oxygen plasma
Surface forms oxide layer.
Exemplarily, by shading layer surface described in ultraviolet light with the shading layer surface
Form oxide layer.
Exemplarily, the phase shift layer is molybdenum silicides, and the light shield layer is layers of chrome, described
Oxide of the oxide layer for chromium.
Another embodiment of the present invention provides a kind of attenuation phase shift mask, including transparent substrates,
Patterned phase shift layer is formed with the transparent substrates, and positioned at the phase shift of marginal area
Light shield layer on layer, is formed with nonconducting oxide layer in the shading layer surface.
Exemplarily, the phase shift layer is molybdenum silicides, and the light shield layer is layers of chrome, described
Oxide of the oxide layer for chromium.
Attenuation phase shift mask and its manufacture method that the present invention is provided, by by attenuation phase shift mask
The light shield layer of surface conductance is oxidized into nonconducting oxide, such that it is able to avoid decay phase
Move mask in specific cleaning machine due to Electrostatic Absorption caused by the defect sticked of little particle
Problem, and then attenuation phase shift mask can be allowed to continue cleaning on this cleaning machine, improve machine
Platform utilization rate, without changing board and increasing process complexity and cost.
Description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.It is attached
Embodiments of the invention and its description are shown in figure, for explaining the principle of the present invention.
In accompanying drawing：
Fig. 1 illustrates a kind of now cross-sectional view of attenuation phase shift mask；
Fig. 2 illustrates that the one kind that Jing often occurs in defects detection of attenuation phase shift mask shown in Fig. 1 lacks
Fall into；
Fig. 3 illustrates the one of the manufacture method of according to embodiments of the present invention one attenuation phase shift mask
Plant flow chart；
Fig. 4 A and Fig. 4 B illustrate the manufacture of attenuation phase shift mask according to an embodiment of the invention
The sectional view of the mask structure that the correlation step of method is formed；
Fig. 5 illustrates the one of the manufacture method of according to embodiments of the present invention two attenuation phase shift mask
Plant flow chart；
Fig. 6 A～Fig. 6 G illustrate the manufacturer of the attenuation phase shift mask according to two embodiment of the invention
The sectional view of the mask structure that the correlation step of method is formed；
Fig. 7 A show the attenuation phase shift mask not form oxide layer after specific cleaning machine
Defects detection structural diagrams；
Fig. 7 B show the attenuation phase shift mask to form oxide layer after specific cleaning machine
Defects detection structural diagrams；
Fig. 8 illustrates that the cross-section structure of now attenuation phase shift mask according to an embodiment of the invention shows
It is intended to.
Specific embodiment
In the following description, a large amount of concrete details are given to provide to the present invention more
Thoroughly understand.It is, however, obvious to a person skilled in the art that of the invention
Can be carried out without the need for one or more of these details.In other examples, in order to keep away
Exempt to obscure with the present invention, for some technical characteristics well known in the art are not described.
It should be appreciated that the present invention can be implemented in different forms, and it is not construed as office
It is limited to embodiments presented herein.Disclosure will be made thoroughly and complete on the contrary, providing these embodiments
Entirely, and those skilled in the art be will fully convey the scope of the invention to.In the accompanying drawings,
In order to clear, the size and relative size in Ceng He areas may be exaggerated.It is identical attached from start to finish
Icon note represents identical element.
It should be understood that work as element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to "
Or when " being coupled to " other elements or layer, its can directly on other elements or layer, and
It is adjacent, be connected or coupled to other elements or layer, or there may be element between two parties or layer.
Conversely, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " being directly connected to "
Or when " being directly coupled to " other elements or layer, then there is no element between two parties or layer.Should
Understand, although can using term first, second, third, etc. describe various elements, part,
Area, floor and/or part, these elements, part, area, floor and/or part should not be by these
Term is limited.These terms be used merely to distinguish element, part, area, floor or part with
Another element, part, area, floor or part.Therefore, without departing from present invention teach that under,
First element discussed below, part, area, floor or part be represented by the second element, part,
Area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... it
Under ", " ... on ", " above " etc., can describe for convenience here and used from
And an element or feature shown in figure are described with other elements or the relation of feature.Should be bright
In vain, in addition to the orientation shown in figure, spatial relationship term is intended to also include using and operate
In device different orientation.For example, if the device upset in accompanying drawing, then, is described as
" below other elements " or " under it " or " under which " element or feature will be orientated
Be other elements or feature " on ".Therefore, exemplary term " ... below " and " ...
Under " may include upper and lower two orientations.Device can additionally be orientated and (be rotated by 90 ° or other
Orientation) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as this
Bright restriction.When here is used, " one " of singulative, " one " and " described/should "
It is also intended to include plural form, unless context is expressly noted that other mode.It is also to be understood that art
Language " composition " and/or " including ", when using in this specification, determine the feature,
The presence of integer, step, operation, element and/or part, but be not excluded for it is one or more its
The presence or addition of its feature, integer, step, operation, element, part and/or group.
When here is used, term "and/or" includes any and all combination of related Listed Items.
Herein with reference to the horizontal stroke of the schematic diagram of the desirable embodiment (and intermediate structure) as the present invention
Sectional view is describing inventive embodiment.As a result, it is contemplated that due to such as manufacturing technology and/
Or the change caused by tolerance from shown shape.Therefore, embodiments of the invention should not limit to
In the given shape in area shown here, but including inclined due to for example manufacturing caused shape
Difference.For example, be shown as the injection region of rectangle its edge generally there is circle or bending features and
/ or implantation concentration gradient, rather than the binary change from injection region to non-injection regions.Equally,
The surface passed through when carrying out by the disposal area and injection can be caused by injecting the disposal area for being formed
Between area in some injection.Therefore, the area for showing in figure is substantially schematic, it
Shape be not intended display device area true form and be not intended limit the present invention
Scope.
As previously mentioned in 28 nanometers of attenuation phase shift mask defect inspection process, discovery has one kind
Specific type defect frequently occurs, and this defect shows as having a large amount of little particles along layers of chrome edge
Transparent area is attached on, as shown in Figure 2.Think the generation of this kind of special defect occur by analysis
Relevant with specific cleaning machine, due to design reasons, the board causes in shower step that pure water cannot
Add carbon dioxide to increase electrical conductivity, and the layers of chrome exposed be due to being conductor, surface have it is powered can
Can, the side effect of its Electrostatic Absorption causes a large amount of defects on phase-shift photomask near layers of chrome edge
Region occur.This defect can be avoided to occur by changing other cleaning machines, be which demonstrated
It is correct to state analysis.Although after defect occurs, can after re-expose protects layers of chrome again
The mode etched with layers of chrome is removed, but this mode increased generation process and cost, and is prolonged
Growth cycle is grown.
The manufacture method of attenuation phase shift mask is proposed for this present invention, for avoiding this kind of defect
Occur, the method is specially to be oxidized into the light shield layer of attenuation phase shift mask surface conductance and does not lead
The oxide of electricity, to avoid attenuation phase shift mask in specific cleaning machine due to Electrostatic Absorption
The defect problem that caused little particle is sticked, can so allow attenuation phase shift mask here to clean
Continue cleaning on board, improve board utilization rate, it is multiple without changing board and increase technique
Polygamy and cost.
In order to thoroughly understand the present invention, detailed step and in detail will be proposed in following description
Thin structure, to explain technical scheme.Presently preferred embodiments of the present invention is retouched in detail
State it is as follows, but except these detailed description in addition to, the present invention can also have other embodiment.
Embodiment one
Below, with reference to Fig. 3 and Fig. 4 A and Fig. 4 B come specifically describe the present invention a reality
Apply a kind of manufacture method of attenuation phase shift mask of example.Wherein, Fig. 3 is illustrated according to of the invention real
Apply a kind of flow chart of the manufacture method of the attenuation phase shift mask of example one；Fig. 4 A and Fig. 4 B show
The correlation step for going out the manufacture method of attenuation phase shift mask according to an embodiment of the invention is formed
Mask structure sectional view.
The manufacture method of the attenuation phase shift mask of the present embodiment, comprises the steps：
Step S301：Transparent substrates 400 are provided, and figure are formed on the transparent substrates 400
The phase shift layer 401 of change, and the light shield layer 402 on the phase shift layer of marginal area, form
Structure as shown in Figure 4 A.
Transparent substrates 400 are for passing through for exposure light.Exemplarily, which can be for completely thoroughly
The quartz glass of light.Phase shift layer 401 is used to make the transmitted light by the phase shift layer 401 anti-phase,
Illustratively molybdenum silicides (MoSi).Light shield layer 402 is used for the phase for covering marginal area
Layer is moved, so that light cannot be passed through, exemplarily, chromium (Cr) metal material can be adopted.
Wherein, manufacture method forming step of step S301 for normal attenuation phase-shift mask, closes
Application No. 96106894, entitled " phase shifting mask be can be found in attenuation phase shift mask technology
And its manufacture method " Chinese patent, will not be described here.
Step S302：Nonconducting oxide layer 403, shape are formed on 402 surface of the light shield layer
Into structure as shown in Figure 4 B.
It is exemplary, in the present embodiment, by oxygen plasma process the shading layer surface with
Oxide layer is formed in the shading layer surface, this method has the advantages that oxidation rate is fast.When
When the light shield layer 402 adopts chromium metal material, then pass through oxygen plasma in step 402
Process chromium surface so as to which surface conversion is chromium oxide, and due to chromium oxide it is non-conductive, then can be with
Little particle caused by avoiding attenuation phase shift mask in specific cleaning machine due to Electrostatic Absorption
The defect problem for sticking.
It is understood that in other embodiments can also be by hiding described in ultraviolet light
Light layer surface is with shading layer surface formation oxide layer.
Embodiment two
Below, with reference to Fig. 5 and Fig. 6 A～Fig. 6 G to specifically describe the present invention implements
A kind of manufacture method of the attenuation phase shift mask of example.Wherein, Fig. 5 is illustrated according to present invention enforcement
A kind of flow chart of the manufacture method of the attenuation phase shift mask of example two；Fig. 6 A～Fig. 6 G illustrate root
According to covering that the correlation step of the manufacture method of the attenuation phase shift mask of two embodiment of the invention is formed
The sectional view of membrane structure.
The manufacture method of the attenuation phase shift mask of the present embodiment, comprises the steps：
Step S501：Transparent substrates 600 are provided, and phase shift layer are formed on the transparent substrates
601 and light shield layer 602 and photoresist layer 603, the structure of formation is as shown in Figure 6A.
Wherein, transparent substrates 600 are for passing through for exposure light.Exemplarily, which can be
The quartz glass of complete printing opacity.Phase shift layer 601 is used to make the transmission by the phase shift layer 601
Light is anti-phase, illustratively molybdenum silicides (MoSi).Light shield layer 602 is used to cover edge
The phase shift layer in region, so that light cannot be passed through, exemplarily, can be using chromium (Cr) gold
Category material.Photoresist layer 603 is used to form the graphical phase shift layer 601 and light shield layer 602
Figure, which can adopt conventional positivity or negative photo glue material.601 and light shield layer 602
And photoresist layer 603 can be by PVD, CVD commonly used in the art or spin coating, coating
Method is formed, and be will not be described here.
Step S502：The phase shift layer 601 and light shield layer 602 are carried out for the first time graphically,
So that the phase shift layer 601 forms predetermined pattern, the structure of formation is as shown in Figure 6B.
It is exemplary, make the photoresist layer 603 form pre- by operations such as exposure, developments first
Determine figure, required for the phase shift layer 601 after the predetermined pattern and formation attenuation phase shift mask
Figure correspondence.Then it is mask by suitable with the photoresist layer 603 with predetermined pattern
The figure that photoresist layer has is transferred to phase shift layer 601 and light shield layer by dry or wet etch
On 602, so that the phase shift layer 601 forms predetermined pattern, pass through what is commonly used after completing
The methods such as ashing remove photoresist layer 603, obtain the step shown in Fig. 6 B.
Step S503：Nonconducting oxide layer 604, shape are formed on 602 surface of the light shield layer
Into structure as shown in Figure 6 C.
It is exemplary, in the present embodiment, by oxygen plasma process the shading layer surface with
Oxide layer is formed in the shading layer surface, this method has the advantages that oxidation rate is fast.When
When the light shield layer 602 adopts chromium metal material, then pass through oxygen plasma in step 503
Process chromium surface so as to which surface conversion is chromium oxide, and due to chromium oxide it is non-conductive, then can be with
Little particle caused by avoiding attenuation phase shift mask in specific cleaning machine due to Electrostatic Absorption
The defect problem for sticking.
It is understood that in other embodiments can also be by hiding described in ultraviolet light
Light layer surface is with shading layer surface formation oxide layer.
Step S504：Second is carried out to the phase shift layer 601 and light shield layer 602 graphically,
To remove light shield layer 602 and oxide layer 604 on the phase shift layer 601 of zone line, protect
Stay light shield layer 602 and oxide layer 604 on the phase shift layer 601 of marginal area.
Exemplary, in this embodiment, step S504 is completed by following step：First as schemed
Shown in 6D, formed and cover substrate 600, phase shift layer 601, light shield layer 602 and oxide layer 604
Photoresist layer 605, then as illustrated in fig. 6e, made by operations such as exposure, developments described
Photoresist layer 605 forms predetermined pattern, phase shift layer of the predetermined pattern exposure positioned at zone line
601st, light shield layer 602 and oxide layer 604, and cover positioned at marginal area phase shift layer 601,
Light shield layer 602 and oxide layer 604, as shown in Figure 6.Then with the photoetching with predetermined pattern
Glue-line 605 is that mask is removed positioned at zone line by suitable dry or wet etch method
Light shield layer 602 and oxide layer 604 on phase shift layer 601, obtains the step shown in Fig. 6 F.
Step S505：Photoresist layer 604 is removed, the structure for being formed is as shown in Figure 6 G.
Exemplarily, photoresist is removed by methods such as conventional ashing in the present embodiment
Layer 605, obtains the step shown in Fig. 6 G.
So far all steps of this enforcement semiconductor device are completed, it is to be understood that upper
Before stating step, among or other steps can also be included afterwards.It is clear in such as photoetching process
The step such as wash, coat, drying, which adopts method commonly used in the art, thus does not do unnecessary explanation,
But which is included within the scope of the invention.
The present embodiment is in this embodiment, to phase shift layer and shading with the difference of embodiment one
Oxide layer is formed on light shield layer before layer re-expose, and first embodiment is to phase shift layer
Oxide layer is formed on light shield layer after completing with light shield layer re-expose etching, the two can be real
The existing purpose of the present invention.As shown in figures 7 a and 7b, wherein Fig. 7 A show not forming oxygen
Change defects detection structural diagrams of the attenuation phase shift mask of layer after specific cleaning machine, figure
7B shows defect inspection of the attenuation phase shift mask to form oxide layer after specific cleaning machine
Geodesic structure is illustrated, and from Fig. 7 A and Fig. 7 B, can be kept away using the method for the present invention really
Exempt from attenuation phase shift mask in specific cleaning machine due to Electrostatic Absorption caused by little particle stick
Attached defect problem.
Additionally, further confirmed that by experiment, in embodiments of the present invention, the formation of oxide layer
Must shading layer surface formed, be unable to reach purpose if shading layer surface has other layers, than
If between step, removing second patterned photoresist shown in Fig. 6 F and Fig. 6 G
Oxide layer is formed on light shield layer before layer and cannot then realize the purpose of the present invention, this is due to this
When light shield layer the reason for be photo-etched glue-line and cover.
Embodiment three
An alternative embodiment of the invention provides a kind of attenuation phase shift mask, and which can be using as above
It is prepared by described method.As shown in figure 8, the attenuation phase shift mask of the embodiment of the present invention includes
Photopolymer substrate 800, is formed with patterned phase shift layer 801 on the transparent substrates 800, with
And the light shield layer 802 on the phase shift layer 801 of marginal area, in 802 table of the light shield layer
Face forms nonconducting oxide layer 803.
It is exemplary, quartz glass of the transparent substrates 800 for complete printing opacity, the phase shift layer
801 is molybdenum silicides, and the light shield layer 802 is layers of chrome, and the oxide layer 803 is chromium
Oxide.
The attenuation phase shift mask of the present embodiment is formed with nonconducting oxide in shading layer surface,
Thus can avoid attenuation phase shift mask in specific cleaning machine as Electrostatic Absorption causes
The defect problem that sticks of little particle, such that it is able to allow attenuation phase shift mask in this cleaning machine
It is upper to continue cleaning, board utilization rate is improved, without changing board and increasing process complexity
And cost.
The present invention is illustrated by above-described embodiment, but it is to be understood that, it is above-mentioned
Embodiment is only intended to citing and descriptive purpose, and is not intended to limit the invention to described
Scope of embodiments in.In addition it will be appreciated by persons skilled in the art that the present invention not office
It is limited to above-described embodiment, teaching of the invention can also be made more kinds of modifications and repair
Change, within these variants and modifications all fall within scope of the present invention.The present invention's
Protection domain is defined by the appended claims and its equivalent scope.
Claims (10)
1. a kind of manufacture method of attenuation phase shift mask, it is characterised in that methods described includes：
Transparent substrates are provided, patterned phase shift layer, Yi Jiwei are formed on the transparent substrates
Light shield layer on the phase shift layer of marginal area；
Nonconducting oxide layer is formed in the shading layer surface.
2. the manufacture method of attenuation phase shift mask as claimed in claim 1, it is characterised in that
The shading layer surface is processed by oxygen plasma to aoxidize to be formed in the shading layer surface
Layer.
3. the manufacture method of attenuation phase shift mask as claimed in claim 1, it is characterised in that
By shading layer surface described in ultraviolet light with shading layer surface formation oxide layer.
4. the manufacture method of the attenuation phase shift mask as described in one of claim 1-3, which is special
Levy and be, the phase shift layer be molybdenum silicides, the light shield layer be layers of chrome, the oxide layer
For the oxide of chromium.
5. a kind of manufacture method of attenuation phase shift mask, it is characterised in that methods described includes：
Transparent substrates are provided, phase shift layer and light shield layer are formed on the transparent substrates；
The phase shift layer and light shield layer are carried out for the first time graphically, so that the phase shift layer is formed
Predetermined pattern；
Nonconducting oxide layer is formed in the shading layer surface；
Second is carried out to the phase shift layer and light shield layer graphically, to remove positioned at zone line
Phase shift layer on light shield layer and oxide layer, retain positioned at marginal area phase shift layer on shading
Layer and oxide layer.
6. the manufacture method of attenuation phase shift mask as claimed in claim 5, it is characterised in that
The shading layer surface is processed by oxygen plasma to aoxidize to be formed in the shading layer surface
Layer.
7. the manufacture method of attenuation phase shift mask as claimed in claim 5, it is characterised in that
By shading layer surface described in ultraviolet light with shading layer surface formation oxide layer.
8. the manufacture method of the attenuation phase shift mask as described in one of claim 5-7, which is special
Levy and be, the phase shift layer be molybdenum silicides, the light shield layer be layers of chrome, the oxide layer
For the oxide of chromium.
9. a kind of attenuation phase shift mask, it is characterised in that including transparent substrates, described
Patterned phase shift layer, and the screening on the phase shift layer of marginal area are formed with photopolymer substrate
Photosphere, is formed with nonconducting oxide layer in the shading layer surface.
10. attenuation phase shift mask as claimed in claim 9, it is characterised in that the phase shift
Layer is molybdenum silicides, and the light shield layer is layers of chrome, and the oxide layer is the oxide of chromium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510672845.XA CN106597803A (en) | 2015-10-16 | 2015-10-16 | Attenuated phase shift mask and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510672845.XA CN106597803A (en) | 2015-10-16 | 2015-10-16 | Attenuated phase shift mask and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106597803A true CN106597803A (en) | 2017-04-26 |
Family
ID=58553789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510672845.XA Pending CN106597803A (en) | 2015-10-16 | 2015-10-16 | Attenuated phase shift mask and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106597803A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI707195B (en) * | 2020-02-14 | 2020-10-11 | 力晶積成電子製造股份有限公司 | Method of manufacturing phase-shifting photomask |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1162766A (en) * | 1995-06-30 | 1997-10-22 | 现代电子产业株式会社 | Phase shift mask and method for fabricating the same |
| CN1900819A (en) * | 2005-07-21 | 2007-01-24 | 信越化学工业株式会社 | Photomask blank, photomask and fabrication method thereof |
| JP2011164566A (en) * | 2010-02-12 | 2011-08-25 | S&S Tech Corp | Halftone phase inversion blank mask, halftone phase inversion photomask, and method for manufacturing the same |
| CN104698737A (en) * | 2010-09-10 | 2015-06-10 | 信越化学工业株式会社 | Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film |
-
2015
- 2015-10-16 CN CN201510672845.XA patent/CN106597803A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1162766A (en) * | 1995-06-30 | 1997-10-22 | 现代电子产业株式会社 | Phase shift mask and method for fabricating the same |
| CN1900819A (en) * | 2005-07-21 | 2007-01-24 | 信越化学工业株式会社 | Photomask blank, photomask and fabrication method thereof |
| JP2011164566A (en) * | 2010-02-12 | 2011-08-25 | S&S Tech Corp | Halftone phase inversion blank mask, halftone phase inversion photomask, and method for manufacturing the same |
| CN104698737A (en) * | 2010-09-10 | 2015-06-10 | 信越化学工业株式会社 | Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI707195B (en) * | 2020-02-14 | 2020-10-11 | 力晶積成電子製造股份有限公司 | Method of manufacturing phase-shifting photomask |
| US11194245B2 (en) | 2020-02-14 | 2021-12-07 | Powerchip Semiconductor Manufacturing Corporation | Method of manufacturing phase-shifting photomask |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101281361A (en) | A photomask with sub-resolution assist feature and manufature method thereof | |
| JPH06118621A (en) | Print reticle without defect and manufacture thereof | |
| CN105446072B (en) | Mask and forming method thereof | |
| CN108073035A (en) | A kind of restorative procedure of lithography mask version and lithography mask version defect | |
| CN106597803A (en) | Attenuated phase shift mask and manufacturing method thereof | |
| JPH06301195A (en) | Correcting method for phase shift photo-mask | |
| CN107942619A (en) | The forming method and etching technics of photoresist pattern, exposure sources | |
| CN101498892A (en) | Photomask defect correction method, photomask manufacturing method, and photomask | |
| US9829786B2 (en) | PSM blank for enhancing small size CD resolution | |
| CN101713914A (en) | Photomask and method of fabricating a photomask | |
| KR101080008B1 (en) | Glass substrate for hardmask and method for fabricatiing hardmask using the same | |
| TW201831985A (en) | Photomask and manufacturing method thereof | |
| JP2013140236A (en) | Mask blank and method for manufacturing phase shift mask | |
| TWI720057B (en) | Method for repairing mask and phase shift mask | |
| JP4878379B2 (en) | Manufacturing method of gray tone mask | |
| US8962485B2 (en) | Reusing active area mask for trench transfer exposure | |
| KR101179262B1 (en) | Method of manufacturing a tritone phase shift mask | |
| KR20180113177A (en) | Method for manufacturing photomask blank | |
| CN203858449U (en) | Photomask standard film | |
| TW201915596A (en) | Photomask and method for manufacturing the photomask | |
| JP4840834B2 (en) | Gray tone mask and manufacturing method thereof | |
| CN110262197B (en) | Black photoresistance substrate fog-like cleaning method | |
| KR100924334B1 (en) | Correction pattern for alignment and light calibration | |
| US6607674B2 (en) | Method of repairing a phase shifting mask | |
| KR100575000B1 (en) | Photomask for manufacturing semiconductor device and method of forming the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170426 |