CN107942619A - The forming method and etching technics of photoresist pattern, exposure sources - Google Patents

The forming method and etching technics of photoresist pattern, exposure sources Download PDF

Info

Publication number
CN107942619A
CN107942619A CN201711215944.0A CN201711215944A CN107942619A CN 107942619 A CN107942619 A CN 107942619A CN 201711215944 A CN201711215944 A CN 201711215944A CN 107942619 A CN107942619 A CN 107942619A
Authority
CN
China
Prior art keywords
exposure
technology
photoresist
layer
photoresist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711215944.0A
Other languages
Chinese (zh)
Inventor
龚成波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to CN201711215944.0A priority Critical patent/CN107942619A/en
Publication of CN107942619A publication Critical patent/CN107942619A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The invention discloses a kind of forming method of photoresist pattern, it includes：Coating forms photoresist layer on substrate；Photomask is set on the photoresist layer, the first exposure technology is carried out to the photoresist layer from the photomask, the patterned exposure figure with the first exposure depth is formed in the photoresist layer；The second exposure technology of whole face exposure is carried out from the photoresist layer, the exposure layer with the second exposure depth is formed in the photoresist layer；The exposure figure and the exposure layer are removed by developing process, obtain photoresist pattern；Wherein, second exposure depth is less than first exposure depth.Present invention also offers a kind of exposure sources, for being exposed technique to photoresist layer, the exposure sources include transport mechanism, the first exposure device and the second exposure device, and first exposure device is used to perform the first exposure technology, and second exposure device is used to perform the second exposure technology.

Description

The forming method and etching technics of photoresist pattern, exposure sources
Technical field
The present invention relates to manufacture semiconductor devices technical field, more particularly to a kind of forming method of photoresist pattern and A kind of etching technics, further relates to a kind of exposure sources for being used to be exposed photoresist layer technique.
Background technology
Circuit pattern in thin-film transistor array base-plate (TFT-Array) or other semiconductor integrated circuit, leads to It is often to be prepared using etching technics.Specifically, be first in substrate prepare formed film layer to be etched (conductor thin film or Semiconductive thin film), then prepare to form photoresist pattern in the film layer to be etched, finally under the protection of the photoresist pattern Technique is performed etching to the film layer to be etched, the photoresist pattern is transferred in film layer to be etched, prepares electricity Road pattern.Bevel edge (Taper) angle and pattern in circuit pattern, not only affect adhesion between layers in device architecture The size of property, its electrical and quality to product suffer from tremendous influence.As it was previously stated, circuit pattern is to pass through etching technics Photoresist pattern is transferred to prepare in film layer to be etched and is formed, to be prepared with good Taper angles and pattern Circuit pattern, is that photoresist pattern to be caused also has good Taper angles and pattern first.
The forming method of photoresist pattern mainly includes coating (Coating), is dried under reduced pressure (Vacuum Dry), exposure (Exposure), develop (Developing), baking (Post-baking).With the diminution of device feature size, figure Line width in case is more and more thinner, higher and higher to the precise requirements of device manufacture, to the Taper angles of pattern and the control of pattern System is also increasingly difficult to.At present, the main reason for Taper angles and pattern unmanageable for causing photoresist pattern is：It is dry in decompression In dry process, the solvent of photoresist layer surface quickly volatilizees, so that photoresist layer surface is hardened and then causes below molten Agent evaporation rate is slack-off, the result is that relatively low so as to be not easy to for the unexposed portion of photoresist layer, the solvent content on its upper strata Dissolve in developer solution, and the solvent content of lower floor is higher so that dissolution velocity is very fast in developer solution.Therefore, developing In the photoresist pattern obtained afterwards, as shown in Figure 1, forming figure wide at the top and narrow at the bottom close to the position of the upper surface of photoresist pattern 1 Shape (being in the shape of inverted trapezoidal), the longitudinal cross-section of the photoresist pattern 1 is included positioned at the trapezoidal portion 1a of bottom and positioned at top Inverted trapezoidal portion 1b, this is not the pattern for the photoresist pattern that we want.Normally with good Taper angles and pattern Photoresist pattern, its longitudinal cross-section should form a complete trapezoidal shape from bottom to top.
Therefore, the prior art has yet to be improved and developed.
The content of the invention
In view of the deficiencies in the prior art, the present invention provides a kind of forming method of photoresist pattern, it can prepare to be formed Photoresist pattern with good Taper angles and pattern, is conducive to prepare in follow-up etching technics with good Taper angles and pattern circuit pattern, lift the quality of product.
To achieve these goals, present invention employs following technical solution：
A kind of forming method of photoresist pattern, it includes：
Coating forms photoresist layer on substrate；
Photomask is set on the photoresist layer, the first exposure technology is carried out to the photoresist layer from the photomask, The patterned exposure figure with the first exposure depth is formed in the photoresist layer；
The second exposure technology of whole face exposure is carried out from the photoresist layer, being formed in the photoresist layer has second to expose The exposure layer of optical depth；
The exposure figure and the exposure layer are removed by developing process, obtain photoresist pattern；
Wherein, the exposure energy of second exposure technology is less than the exposure energy of first exposure technology, so that institute State the second exposure depth and be less than first exposure depth.
Wherein, the exposure energy of second exposure technology for first exposure technology exposure energy 12% with Under.
Wherein, the exposure energy of second exposure technology for first exposure technology exposure energy 8%~ 12%.
Wherein, first exposure depth is not less than the thickness of the photoresist layer.
Wherein, after coating forms photoresist layer, using the solvent being dried under reduced pressure in the technique removal photoresist layer.
Present invention also offers a kind of etching technics, it includes：
Form film layer to be etched；
Using the forming method of photoresist pattern as described above, prepared in the film layer to be etched and form photoresist figure Case；
Under the protection of the photoresist pattern, technique is performed etching to the film layer to be etched.
Another aspect of the present invention is to provide a kind of exposure sources, for being exposed technique to photoresist layer, wherein, it is described Exposure sources include transport mechanism and are arranged on the first exposure device and the second exposure device of the transport mechanism relatively above, First exposure device and second exposure device are set gradually along the direct of travel of the transport mechanism；Wherein, institute State the first exposure device be used for perform the first exposure technology, with the photoresist layer formed have the first exposure depth pattern The exposure figure of change；Second exposure device is used to perform the second exposure technology, has the to be formed in the photoresist layer The exposure layer of two exposure depths；Wherein, the exposure energy of second exposure technology is less than the exposure of first exposure technology Energy, so that second exposure depth is less than first exposure depth.
A kind of forming method of photoresist pattern provided in an embodiment of the present invention, double exposure technique is carried out to photoresist layer, its It can prepare to form the photoresist pattern with good Taper angles and pattern, be conducive to prepare in follow-up etching technics The circuit pattern with good Taper angles and pattern is obtained, lifts the quality of product.
Brief description of the drawings
Fig. 1 is the graphical representation of exemplary of the photoresist pattern prepared in the prior art；
Fig. 2 is the process flow chart of etching technics provided in an embodiment of the present invention；
Fig. 3 is the process flow chart of the forming method of photoresist pattern provided in an embodiment of the present invention；
Fig. 4 a~4d are in the forming method of photoresist pattern provided in an embodiment of the present invention, and each step corresponds to the device obtained The graphical representation of exemplary of part structure；
Fig. 5 is the structure diagram of exposure sources provided in an embodiment of the present invention.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in attached drawing and according to What the embodiments of the present invention of attached drawing description were merely exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only Show the structure and/or processing step closely related with scheme according to the present invention, and eliminate little with relation of the present invention Other details.
The present embodiment provide firstly a kind of etching technics, be used to prepare to form circuit pattern.As shown in Fig. 2, the quarter Etching technique includes step：
S1, preparation forms film layer to be etched on underlay substrate.Specifically, the material of the film layer to be etched can be with It is the conductor material or semi-conducting material for forming various circuits or element in circuit pattern, typically uses depositing operation system It is standby to obtain.
S2, preparation forms photoresist pattern in the film layer to be etched.Specifically, it is in the film to be etched first Layer coating photoresist layer, then by exposure, developing process, the photoresist layer is developed to form photoresist pattern.
S3, under the protection of the photoresist pattern, perform etching technique to the film layer to be etched, etching obtains circuit Pattern.
Wherein, in order in etching technics etching obtain with good Taper angles and pattern circuit pattern, it is necessary to Control the Taper angles and pattern of photoresist pattern.For this reason, the present embodiment additionally provides a kind of forming method of photoresist pattern, Refering to Fig. 3 and Fig. 4 a~4d, the forming method of the photoresist pattern includes step：
S10, as shown in fig. 4 a, on the substrate 10 coating form photoresist layer 20.In the present embodiment, the substrate 10 refers to Foregoing film layer to be etched, the photoresist layer 20 are positivity photoresist.Wherein it is possible to applied by slot coated technique or spin coating proceeding Cloth forms the photoresist layer 20.Further, after coating forms the photoresist layer 20, also application is dried under reduced pressure technique removal Solvent in the photoresist layer 20.
S20, as shown in Figure 4 b, sets photomask 30, to the light from the photomask 30 on the photoresist layer 20 Resistance layer 20 carries out the first exposure technology 41, and being formed in the photoresist layer 20 has the first exposure depth H1Patterned exposure Figure 20a.The part that the photoresist layer 20 is exposed is dissolved in developer solution in follow-up development and removes, and therefore, it is necessary to according to institute The photomask 30 of photoresist pattern selection corresponding pattern to be formed, alternatively non-transparent district is arranged to for the region of photoresist to be retained, right Transparent area is arranged in the region of photoresist to be removed.Wherein, the first exposure depth H1The photoresist layer 20 should be not less than Thickness, to ensure after development removes exposure figure 20a, the substrate 10 of lower section can expose.
S30, as illustrated in fig. 4 c, carries out the second exposure technology 42 of whole face exposure, in the light from the photoresist layer 20 Being formed in resistance layer 20 has the second exposure depth H2Exposure layer 20b.Wherein, when carrying out the second exposure technology 42, institute at this time Any photomask need not be set by stating photoresist layer 20, but the whole surface of the photoresist layer 20 is continuously exposed, but It is to control the second exposure depth H2For less than the first exposure depth H1, specifically, by controlling second exposure The exposure energy of technique 42 is less than the exposure energy of first exposure technology 41, it is possible thereby to so that second exposure depth H2Less than the first exposure depth H1。
In preferable scheme, the exposure energy of second exposure technology 42 is arranged to first exposure technology 41 10% or so of exposure energy, it usually needs be arranged on less than 12%, the highly preferred scope of the numerical value is 8%~12%, only Need to be formed about the less exposure layer 20b of thickness on the top layer of the photoresist layer 20.
S40, as shown in figure 4d, removes the exposure figure 20a and the exposure layer 20b by developing process, obtains light Hinder pattern 20c.
The forming method of photoresist pattern as described above, compared with the prior art, adds and carries out second to photoresist layer 20 Exposure technology 42, the less exposure layer 20b of thickness is formed about on the top layer of the photoresist layer 20, the exposure layer 20b is not only It is exposure area when covering the first exposure technology 41, also cover unexposed area during the first exposure technology 41, also, Due to the thickness very little of the exposure layer 20b, it will not change the exposure figure 20a of the first exposure technology 41 formation.Shown During shadow technique, unexposed area when photoresist pattern is by the first exposure technology 41 is formed, the present invention in the region top into Go weak exposure (the second exposure technology 42) and become prone to be dissolved in developer solution, the photoresist pattern 20c's that final development obtains Longitudinal cross-section forms a complete trapezoidal shape from bottom to top, has good Taper angles and pattern.Compared to Fig. 1 Shown photoresist pattern, equivalent to by carry out the second exposure technology 42, by wherein top inverted trapezoidal portion 1b dissolving remove or Person promotes dissolving so that it becomes trapezoidal shape.
Further, after developing process is carried out, baking processing also is carried out to the photoresist pattern 20c, with further Optimize the Taper angles of photoresist pattern 20c.
In addition, in the forming method of photoresist pattern as described above, the second exposure technology 42, Ran Houzai can also be first carried out The first exposure technology 41 is carried out, is also just said, the sequencing of the step S20 and step S30 of the above can exchange.
The present embodiment additionally provides a kind of exposure sources, for carrying out the forming method of photoresist pattern as described above When, technique is exposed to photoresist layer.As shown in figure 5, the exposure sources include transport mechanism 100 and are arranged on the transmission The first exposure device 200 and the second exposure device 300 of mechanism 100 relatively above, first exposure device 200 and described Two exposure devices 300 are set gradually along the direct of travel (X-direction in such as Fig. 5) of the transport mechanism 100.Wherein, it is described First exposure device 200 is used to perform the first exposure technology 41 as described above, has first to be formed in the photoresist layer The patterned exposure figure of exposure depth.Second exposure device 300 is used to perform the second exposure technology as described above 42, to form the exposure layer with the second exposure depth in the photoresist layer.Wherein, first exposure device 200 Exposure energy with second exposure device 300 is all that can be adjusted according to actual needs, to meet as above institute respectively The requirement of the first exposure technology 41 and the light exposure of the second exposure technology 42 stated.
In conclusion the forming method of etching technics provided in an embodiment of the present invention and corresponding photoresist pattern, passes through Double exposure technique is carried out to photoresist layer, it can prepare to form the photoresist pattern with good Taper angles and pattern, have Beneficial to the circuit pattern with good Taper angles and pattern is prepared in follow-up etching technics, product is lifted Quality.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to Non-exclusive inclusion, so that process, method, article or equipment including a series of elements not only will including those Element, but also including other elements that are not explicitly listed, or further include as this process, method, article or equipment Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that Also there are other identical element in process, method, article or equipment including the key element.
The above is only the embodiment of the application, it is noted that for the ordinary skill people of the art For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should It is considered as the protection domain of the application.

Claims (10)

  1. A kind of 1. forming method of photoresist pattern, it is characterised in that including：
    Coating forms photoresist layer on substrate；
    Photomask is set on the photoresist layer, the first exposure technology is carried out to the photoresist layer from the photomask, in institute State and the patterned exposure figure with the first exposure depth is formed in photoresist layer；
    The second exposure technology of whole face exposure is carried out from the photoresist layer, being formed in the photoresist layer has the second exposure deeply The exposure layer of degree；
    The exposure figure and the exposure layer are removed by developing process, obtain photoresist pattern；
    Wherein, the exposure energy of second exposure technology is less than the exposure energy of first exposure technology, so that described the Two exposure depths are less than first exposure depth.
  2. 2. the forming method of photoresist pattern according to claim 1, it is characterised in that the exposure of second exposure technology Energy is less than the 12% of the exposure energy of first exposure technology.
  3. 3. the forming method of photoresist pattern according to claim 2, it is characterised in that the exposure of second exposure technology Energy is the 8%~12% of the exposure energy of first exposure technology.
  4. 4. the forming method of photoresist pattern according to claim 1, it is characterised in that first exposure depth is not less than The thickness of the photoresist layer.
  5. 5. the forming method of photoresist pattern according to claim 1, it is characterised in that after coating forms photoresist layer, Using the solvent being dried under reduced pressure in the technique removal photoresist layer.
  6. A kind of 6. etching technics, it is characterised in that including：
    Form film layer to be etched；
    Using the forming method of any photoresist patterns of claim 1-5, prepare and formed in the film layer to be etched Photoresist pattern；
    Under the protection of the photoresist pattern, technique is performed etching to the film layer to be etched.
  7. 7. a kind of exposure sources, for being exposed technique to photoresist layer, it is characterised in that the exposure sources include conveyer Structure and be arranged on the first exposure device and the second exposure device of the transport mechanism relatively above, first exposure device and Second exposure device is set gradually along the direct of travel of the transport mechanism；
    Wherein, first exposure device is used to perform the first exposure technology, has first to expose to be formed in the photoresist layer The patterned exposure figure of optical depth；Second exposure device is used to perform the second exposure technology, with the photoresist layer It is middle to form the exposure layer with the second exposure depth；
    Wherein, the exposure energy of second exposure technology is less than the exposure energy of first exposure technology, so that described the Two exposure depths are less than first exposure depth.
  8. 8. exposure sources according to claim 7, it is characterised in that the exposure energy of second exposure technology is described Less than the 12% of the exposure energy of first exposure technology.
  9. 9. exposure sources according to claim 8, it is characterised in that the exposure energy of second exposure technology is described The 8%~12% of the exposure energy of first exposure technology.
  10. 10. exposure sources according to claim 7, it is characterised in that first exposure depth is not less than the photoresist The thickness of layer.
CN201711215944.0A 2017-11-28 2017-11-28 The forming method and etching technics of photoresist pattern, exposure sources Pending CN107942619A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711215944.0A CN107942619A (en) 2017-11-28 2017-11-28 The forming method and etching technics of photoresist pattern, exposure sources

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711215944.0A CN107942619A (en) 2017-11-28 2017-11-28 The forming method and etching technics of photoresist pattern, exposure sources

Publications (1)

Publication Number Publication Date
CN107942619A true CN107942619A (en) 2018-04-20

Family

ID=61949297

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711215944.0A Pending CN107942619A (en) 2017-11-28 2017-11-28 The forming method and etching technics of photoresist pattern, exposure sources

Country Status (1)

Country Link
CN (1) CN107942619A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108919613A (en) * 2018-08-09 2018-11-30 锐捷光电科技（江苏）有限公司 A kind of zoom exposure method
CN111180333A (en) * 2020-01-03 2020-05-19 云谷（固安）科技有限公司 Display panel manufacturing method and display panel
CN112386399A (en) * 2019-08-12 2021-02-23 湖南早晨纳米机器人有限公司 Nano surgical robot and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0461663A1 (en) * 1990-06-14 1991-12-18 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device, including a step of forming a pattern on a photo-resist film
CN1421745A (en) * 2001-11-22 2003-06-04 旺宏电子股份有限公司 Method of forming photoresist pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0461663A1 (en) * 1990-06-14 1991-12-18 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device, including a step of forming a pattern on a photo-resist film
CN1421745A (en) * 2001-11-22 2003-06-04 旺宏电子股份有限公司 Method of forming photoresist pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108919613A (en) * 2018-08-09 2018-11-30 锐捷光电科技（江苏）有限公司 A kind of zoom exposure method
CN112386399A (en) * 2019-08-12 2021-02-23 湖南早晨纳米机器人有限公司 Nano surgical robot and manufacturing method thereof
CN111180333A (en) * 2020-01-03 2020-05-19 云谷（固安）科技有限公司 Display panel manufacturing method and display panel

Similar Documents

Publication Publication Date Title
US10001875B2 (en) Touch panel and method of fabricating the same
US20190181161A1 (en) Array substrate and preparation method therefor, and display device
CN107942619A (en) The forming method and etching technics of photoresist pattern, exposure sources
CN101436528A (en) Method for fabricating semiconductor device
WO2015055054A1 (en) Array substrate and method for manufacturing same, and display device
WO2014166150A1 (en) Touch panel and manufacturing method thereof and display device
WO2017193710A1 (en) Array substrate and manufacturing method thereof, display panel, and display device
KR20190077570A (en) Array substrate, method of manufacturing the same, and display device
CN105974620A (en) Method for manufacturing substrate, substrate and display device
CN209044299U (en) Mask plate
CN101419400A (en) Dry method etching method by chrome metal mask
WO2016155429A1 (en) Display substrate and manufacturing method therefor, and display device
WO2016183968A1 (en) Array substrate, manufacturing method thereof, display panel and mask plate
JP6947925B2 (en) Manufacturing method of TFT array substrate and manufacturing method of display device
JPS6318351A (en) Mask for pattern formation
CN109917616A (en) The production method and double patterning method of mask for double patterning
CN104779145B (en) Mask plate and preparation method thereof
CN105161454A (en) Array substrate and manufacturing method thereof, display apparatus
JPS6222463B2 (en)
CN104300002A (en) Thin film transistor and manufacturing method and photoetching process thereof
JPH03102324A (en) Production of thin-film transistor
US8765612B2 (en) Double patterning process
CN108107673A (en) photoresist processing method
US9070602B2 (en) Method for fabricating liquid crystal display
WO2017133111A1 (en) Manufacturing method for thin-film transistor, manufacturing method for array substrate, array substrate and display apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180420

WD01 Invention patent application deemed withdrawn after publication