CN110261752A - Semiconductor devices fault detection method and device, converter - Google Patents
Semiconductor devices fault detection method and device, converter Download PDFInfo
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- CN110261752A CN110261752A CN201810196510.9A CN201810196510A CN110261752A CN 110261752 A CN110261752 A CN 110261752A CN 201810196510 A CN201810196510 A CN 201810196510A CN 110261752 A CN110261752 A CN 110261752A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000001514 detection method Methods 0.000 title claims abstract description 48
- 238000006243 chemical reaction Methods 0.000 claims abstract description 109
- 230000008878 coupling Effects 0.000 claims abstract description 25
- 238000010168 coupling process Methods 0.000 claims abstract description 25
- 238000005859 coupling reaction Methods 0.000 claims abstract description 25
- 238000004146 energy storage Methods 0.000 claims abstract description 4
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- 238000011217 control strategy Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 10
- 230000036039 immunity Effects 0.000 abstract description 7
- 238000011897 real-time detection Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
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- 230000002159 abnormal effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
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- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Abstract
It includes: main power module, voltage processing module and Logic control module that the present invention, which discloses a kind of semiconductor devices fault detection method and device, converter, described device,；Main power module includes energy-storage units and power conversion unit, and power conversion unit includes semiconductor devices；Voltage processing module, the voltage between default node for acquiring power conversion unit；Voltage between default node is converted into voltage state signal；Low voltage signal is exported after carrying out Phototube Coupling processing to voltage state signal；Logic control module, for obtaining the low voltage signal of voltage processing module output；Determine whether semiconductor devices breaks down according to the driving control signal of power conversion unit and low voltage signal.The present invention can real-time detection semiconductor devices failure；Solve the problems, such as that the detection of existing semiconductor devices failure is poor without real-time, highly resistance immunity and isolation.
Description
Technical field
The present invention relates to power electronics field more particularly to a kind of semiconductor devices fault detection method and device,
Converter.
Background technique
Semiconductor devices is as the core component in power conversion unit, and after breaking down, both end voltage can occur
Change, causes the voltage status of the key node of power conversion unit that can also change；On the other hand, semiconductor devices is being sent out
Before raw failure, itself characteristic can generate exception, cause the voltage at both ends that can also create a difference with voltage when regular event, together
The voltage status that sample will lead to the key node of power conversion unit generates change.Pass through crucial section in detection power conversion unit
The voltage status at point both ends, so that it may judge whether the semiconductor in power conversion unit is abnormal.After judging exception, in time
Protection act is carried out, secondary failure and failure propagation can be prevented.
It fast and accurately detects and judges semiconductor overcurrent, short circuit, lead directly to be the key point for carrying out product Global Macros.
Existing general detection method has significant limitations:
1), do not have real-time.Sense channel requires by filtering, memory and resets link, causes bridge arm to occur straight
It can not detected at the first time after logical failure, detect will lead in practical applications not in time is unable to quick start protection, from
And lead to secondary failure.
2), do not have highly resistance immunity.Existing detection circuit by electric signal transmit, under hyperbaric environment vulnerability to jamming compared with
Difference.
3), it is isolated poor.Existing detection circuit by electric signal transmit, with high-tension circuit cannot achieve reliably every
From safety is poor.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of semiconductor devices fault detection method and device, converter,
It is poor without real-time, highly resistance immunity and isolation to solve existing semiconductor devices overcurrent, short circuit, straight-through detection
Problem.
It is as follows that the present invention solves technical solution used by above-mentioned technical problem:
According to an aspect of the present invention, a kind of semiconductor devices fault detection means provided, described device includes: master
Power module, voltage processing module and Logic control module；
The main power module includes energy-storage units and power conversion unit, and the power conversion unit includes semiconductor device
Part；
The voltage processing module, the voltage between default node for acquiring the power conversion unit；It will be described
Voltage between default node is converted to voltage state signal；It is exported after carrying out Phototube Coupling processing to the voltage state signal
Low voltage signal；
The Logic control module, for obtaining the low voltage signal of the voltage processing module output；According to the function
The driving control signal of rate converter unit and the low voltage signal determine whether the semiconductor devices breaks down.
According to an aspect of the present invention, a kind of semiconductor devices fault detection method provided, the method includes steps
It is rapid:
Acquire the voltage between the default node of power conversion unit；
Voltage between the default node is converted into voltage state signal；
Low voltage signal is exported after carrying out Phototube Coupling processing to the voltage state signal；
The power conversion list is determined according to the driving control signal of the low voltage signal and the power conversion unit
Whether the semiconductor devices in member breaks down.
According to an aspect of the present invention, a kind of converter provided, the converter include above-mentioned semiconductor devices
Fault detection means.
Semiconductor devices fault detection method and device, the converter of the embodiment of the present invention, by by collected voltage
Voltage state signal is converted to, low voltage signal is exported after isolation processing, by comparing low voltage signal and driving control signal
Determine whether semiconductor devices breaks down, can real-time detection semiconductor devices failure, solve existing semiconductor devices therefore
The detection of barrier is without real-time, highly resistance immunity and poor problem is isolated.
Detailed description of the invention
Fig. 1 is the semiconductor devices fault detection means structural schematic diagram of the embodiment of the present invention；
Fig. 2 is voltage schematic diagram of processing module structure in the semiconductor devices fault detection means of the embodiment of the present invention；
Fig. 3 is that voltage state signal converting unit structure is shown in the semiconductor devices fault detection means of the embodiment of the present invention
It is intended to；
Fig. 4 is Phototube Coupling processing unit structural representation in the semiconductor devices fault detection means of the embodiment of the present invention
Figure；
Fig. 5 is Logic control module structural schematic diagram in the semiconductor devices fault detection means of the embodiment of the present invention；
Fig. 6 is another structural representation of Logic control module in the semiconductor devices fault detection means of the embodiment of the present invention
Figure；
Fig. 7 is the semiconductor devices fault detection method flow diagram of the embodiment of the present invention；
Fig. 8 is voltage state signal flow path switch signal in the semiconductor devices fault detection method of the embodiment of the present invention
Figure；
Fig. 9 is Phototube Coupling processing flow schematic diagram in the semiconductor devices fault detection method of the embodiment of the present invention；
Figure 10 is the main power module architectures schematic diagram of the embodiment of the present invention；
Figure 11 is the sequential organization schematic diagram of the embodiment of the present invention.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
In order to be clearer and more clear technical problems, technical solutions and advantages to be solved, tie below
Drawings and examples are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
First embodiment
As shown in Figure 1, first embodiment of the invention provides a kind of semiconductor devices fault detection means, described device packet
It includes: main power module 10, voltage processing module 20 and Logic control module 30；
The main power module 10 includes energy-storage units 11 and power conversion unit 12, and the power conversion unit 12 includes
Semiconductor devices (attached drawing is not shown).
In the present embodiment, power conversion unit 12 includes but is not limited to " I " type three-level topology circuit, three electricity of T-shape
Flat topological circuit, " Vienna-Like " three-level topology circuit, two level converter topological circuits, energy are released topological circuit
Deng.This is not restricted for the quantity of power conversion unit 12.
The voltage processing module 20, the voltage between default node for acquiring the power conversion unit 12；It will
Voltage between the default node is converted to voltage state signal；After carrying out Phototube Coupling processing to the voltage state signal
Export low voltage signal.
In the present embodiment, the low voltage signal that the voltage processing module 20 exports is high level signal or low level
Signal.
It please refers to shown in Fig. 2, in the present embodiment, the voltage processing module 20 includes acquisition unit 21, voltage status
Signal conversion unit 22 and Phototube Coupling processing unit 23；
The acquisition unit 21, the voltage between default node for acquiring the power conversion unit 12.
It please refers to shown in Figure 10, take the power conversion unit 12 as the example of " I " type three-level topology circuit, preset section
Point can be the DC side midpoint N and power conversion side midpoint L in power conversion unit 12, by between the acquisition both ends N and L
Voltage, to determine whether the semiconductor devices breaks down.In practical applications, electric including but not limited between this two o'clock
Pressure.
The voltage state signal converting unit 22, for the voltage between the default node to be converted to voltage status
Signal.
It please refers to shown in Fig. 3, in the present embodiment, the voltage state signal converting unit 22 includes that voltage conversion is single
Member 221 and epidemic situation comparison subelement 222；
The voltage conversion subunit 221, for the voltage between the default node to be converted to comparison voltage；Essence
On be the low-voltage converted high voltage to predeterminated voltage threshold voltage ratings match, referred to as comparison voltage.
The epidemic situation comparison subelement 222, for the comparison voltage to be compared with predetermined voltage threshold, according to than
Compared with result output voltage status signal.
The Phototube Coupling processing unit 23, for low to being exported after voltage state signal progress Phototube Coupling processing
Voltage signal.
It please refers to shown in Fig. 4, in the present embodiment, the Phototube Coupling processing unit 23 includes electro-optic conversion subelement
231, transmission unit 232 and photoelectric conversion subelement 233；
The electro-optic conversion subelement 231, for the voltage state signal to be converted to optical signal；
The transmission unit 232, the optical signal transmission for converting the electro-optic conversion subelement 231 give the photoelectricity
Conversion subunit 233；
The photoelectric conversion subelement 233, the optical signal for transmitting the transmission unit 232 are converted to the low electricity
Press signal.
In the present embodiment, it is handled by Phototube Coupling, i.e. electrical isolation, safety requirement can be met.
The Logic control module 30, the low voltage signal exported for obtaining the voltage processing module 20；According to institute
The driving control signal and the low voltage signal for stating power conversion unit 12 determine whether the semiconductor devices breaks down.
It please refers to shown in Fig. 5, in the present embodiment, the Logic control module 30 includes drive control unit 31 and determines
Unit 32；
The drive control unit 31, for exporting the driving control signal to the function according to preset control strategy
Rate converter unit 12；
The determination unit 32, for obtaining the low voltage signal and the drive that the voltage processing module 20 exports
Dynamic control signal；Determine whether the semiconductor devices occurs event according to the driving control signal and the low voltage signal
Barrier.
Specifically, if the driving control signal of the low voltage signal and the power conversion unit is not identical, it is determined that
Semiconductor devices fail in the power conversion unit；If the drive of the low voltage signal and the power conversion unit
Dynamic control signal is identical, it is determined that the semiconductor devices in the power conversion unit is normal.
Optionally, it please refers to shown in Fig. 6, the Logic control module 30 further includes hair wave control unit 33；
The hair wave control unit 33, if determining the semiconductor devices fail for the determination unit 32,
The drive control unit 31 is forbidden to export the driving control signal to the power conversion unit 12；Otherwise allow the drive
Dynamic control unit 31 exports the driving control signal to the power conversion unit 12.
The hair wave control unit 33, if being also used to the determination unit 32 determines the semiconductor devices fail,
Preset driving signal is exported to the power conversion unit 12.For preventing power conversion unit 12 from secondary failure occur or going out
Existing failure propagation.
The present embodiment in order to better understand, below in conjunction with Figure 10 and Figure 11 to the deterministic process of semiconductor devices failure into
Row explanation:
As shown in Figure 10, the power conversion unit 12 is " I " type three-level topology circuit, presets node as power change
The DC side midpoint N and power conversion side midpoint L in unit 12 are changed, the voltage V between the acquisition both ends N and L is passed throughLN, to determine
Whether the semiconductor devices breaks down.
As shown in figure 11, " 0 " in driving control signal represents power switch tube (T1-T4) in power conversion unit 12
Cut-off signals, " 1 " represent the open signal of power switch tube (T1-T4)；
" 0110 " represents power switch tube T2 and power switch tube T3 is open-minded, power switch tube T1 and power switch tube T4
It closes；Similarly, " 1100 " represent T1 and T2 is open-minded, and T3 and T4 are closed.
In t0Moment, 31 output driving of drive control unit control signal 1100, i.e. driving control signal changes from 0110
It is 1100, power conversion unit 12 actually needs to close T3, opens T1.V at this timeLNVoltage is from 0 level changeLevel.
Voltage conversion subunit 221 converts the high voltage of power conversion unit 12 to and predetermined voltage threshold UrefMatching
Comparison voltage Ucmp, Ucmp=kcmp*VLN, wherein kcmpFor voltage conversion coefficient.Predetermined voltage threshold UrefIt can be set to
Comparison voltage UcmpWith predetermined voltage threshold UrefIt is compared, high level signal or low is exported according to comparison result
Level signal.
As shown in figure 11, as the voltage V in power conversion unit 12 between the both ends N and LLNIt is equal toWhen, UcmpIt is greater than
Uref, the optical signal in electro-optic conversion subelement 231 in Phototube Coupling processing unit 23 is luminance, and transmission unit 232 will
Photoelectric conversion subelement 233 is sent into after optical signal transmission, the optical signal received is converted to high electricity by photoelectric conversion subelement 233
It is flat；As the voltage V in power conversion unit 12 between the both ends N and LLNWhen equal to 0, UcmpLess than Uref, Phototube Coupling processing unit
The optical signal in electro-optic conversion subelement 231 in 23 is non-light emitting state, without optical signal transmission, photoelectricity in transmission unit 232
When conversion subunit 233 is detected in transmission unit 232 without optical signal transmission, the output of photoelectric conversion subelement 233 is low level.
Therefore, when receiving the output of Phototube Coupling processing unit 23 in Logic control module 30 is high level, power becomes
Change the voltage V in unit 12 between the both ends N and LLNIt is equal toIt is open-minded to represent power switch tube T1 and T2, electric current flow through T1 and
T2；；When receiving the output of Phototube Coupling processing unit 23 in Logic control module 30 is low level, in power conversion unit 12
Voltage V between the both ends N and LLNEqual to 0, represent that power switch tube T2 or T3 be open-minded or T2 and T3 is open-minded simultaneously.
The determination unit 32 of Logic control module 30 is by constantly detecting in power conversion unit 12 between the both ends N and L
Voltage VLN, it is compared in real time with the driving control signal of the output of drive control unit 31, judges whether the two matches, if not
Matching, illustrates occur semiconductor devices failure in power conversion unit 12；If the two matches, illustrate in power conversion unit 12
Semiconductor devices is working properly.
The semiconductor devices fault detection assembling device of the embodiment of the present invention, passes through voltage processing module and logic control mould
Collected voltage is converted to voltage state signal, exports low voltage signal after isolation processing, believe by comparing low-voltage by block
Number determine whether semiconductor devices breaks down with driving control signal, can real-time detection semiconductor devices failure, solve existing
The detection of some semiconductor devices failures is without real-time, highly resistance immunity and poor problem is isolated.
Second embodiment
As shown in fig. 7, second embodiment of the invention provides a kind of semiconductor devices fault detection method, the method includes
Step:
S11, acquire power conversion unit default node between voltage.
It please refers to shown in Figure 10, by taking " I " type three-level topology circuit as an example, default node can be power conversion unit 12
In DC side midpoint N and power conversion side midpoint L, by acquisition the both ends N and L between voltage, to determine the semiconductor
Whether device breaks down.In practical applications, voltage including but not limited between this two o'clock.
S12, the voltage between the default node is converted into voltage state signal.
It please refers to shown in Fig. 8, in the present embodiment, the voltage by between the default node is converted to voltage status
Signal comprising steps of
S121, the voltage of the voltage between the default node is converted into comparison voltage；Substantially high voltage is turned
Turn to the low-voltage with predeterminated voltage threshold voltage ratings match, referred to as comparison voltage.
S122, the comparison voltage is compared with predetermined voltage threshold, is believed according to comparison result output voltage state
Number.
S13, low voltage signal is exported after carrying out Phototube Coupling processing to the voltage state signal.
In the present embodiment, the low voltage signal of output is high level signal or low level signal.
It please refers to shown in Fig. 9, it is in the present embodiment, defeated after the progress Phototube Coupling processing to the voltage state signal
Out low voltage signal comprising steps of
S131, the voltage state signal is converted into optical signal；
S132, the transmission optical signal；
S133, the optical signal of transmission is converted into the low voltage signal.
In the present embodiment, it is handled by Phototube Coupling, i.e. electrical isolation, safety requirement can be met.
S14, determine that the power becomes according to the driving control signal of the low voltage signal and the power conversion unit
Whether the semiconductor devices changed in unit breaks down.
In the present embodiment, the driving control signal according to the low voltage signal and the power conversion unit is true
Semiconductor devices in the fixed power conversion unit whether break down comprising steps of
If the driving control signal of the low voltage signal and the power conversion unit is not identical, it is determined that the power
Semiconductor devices fail in converter unit；If the drive control of the low voltage signal and the power conversion unit is believed
It is number identical, it is determined that the semiconductor devices in the power conversion unit is normal.
In the present embodiment, the driving control signal according to the low voltage signal and the power conversion unit is true
Whether the semiconductor devices in the fixed power conversion unit further comprises the steps of: after breaking down
If it is determined that the semiconductor devices fail in the power conversion unit, then forbid exporting the drive control letter
Number arrive the power conversion unit；Otherwise allow to export the driving control signal to the power conversion unit.
Optionally, the method also includes steps:
If it is determined that the semiconductor devices fail in the power conversion unit, exports preset driving signal described in
Power conversion unit.
Preset driving signal is exported to the power conversion unit for preventing power conversion unit from secondary failure occur
Or extension of breaking down.
The semiconductor devices fault detection method of the embodiment of the present invention, by the way that collected voltage is converted to voltage status
Signal exports low voltage signal after isolation processing, determines semiconductor devices by comparing low voltage signal and driving control signal
Whether break down, can real-time detection semiconductor devices failure, the detection for solving existing semiconductor devices failure do not have
Real-time, highly resistance immunity and the poor problem of isolation.
3rd embodiment
Third embodiment of the invention provides a kind of converter, and the converter includes semiconductor device described in first embodiment
Part fault detection means.Semiconductor devices fault detection means can refer to foregoing teachings, and therefore not to repeat here.
The converter of the embodiment of the present invention, by the way that collected voltage is converted to voltage state signal, after isolation processing
Low voltage signal is exported, determines whether semiconductor devices breaks down with driving control signal by comparing low voltage signal, it can
Real-time detection semiconductor devices failure, the detection for solving existing semiconductor devices failure do not have real-time, highly resistance immunity
And the problem that isolation is poor.
It should be noted that above-mentioned apparatus embodiment and embodiment of the method belong to same design, specific implementation process is detailed
See embodiment of the method, and the technical characteristic in embodiment of the method is corresponding applicable in Installation practice, which is not described herein again.
Through the above description of the embodiments, those skilled in the art can be understood that above-described embodiment side
Method can be realized by means of software and necessary general hardware platform, naturally it is also possible to be realized by hardware, but very much
In the case of the former be more preferably embodiment.Based on this understanding, technical solution of the present invention is substantially in other words to existing
The part that technology contributes can be embodied in the form of software products, which is stored in a storage
In medium (such as ROM/RAM, magnetic disk, CD), including some instructions are used so that a terminal device (can be mobile phone, calculate
Machine, server, air conditioner or network equipment etc.) execute method described in each embodiment of the present invention.
Preferred embodiments of the present invention have been described above with reference to the accompanying drawings, not thereby limiting the scope of the invention.This
Without departing from the scope and spirit of the invention, there are many variations to implement the present invention by field technical staff, for example as one
The feature of a embodiment can be used for another embodiment and obtain another embodiment.It is all to use institute within technical concept of the invention
Any modifications, equivalent replacements, and improvements of work, should all be within interest field of the invention.
Claims (14)
1. a kind of semiconductor devices fault detection means, which is characterized in that described device includes: main power module, voltage processing
Module and Logic control module；
The main power module includes energy-storage units and power conversion unit, and the power conversion unit includes semiconductor devices；
The voltage processing module, the voltage between default node for acquiring the power conversion unit；It will be described default
Voltage between node is converted to voltage state signal；Low electricity is exported after carrying out Phototube Coupling processing to the voltage state signal
Press signal；
The Logic control module, for obtaining the low voltage signal of the voltage processing module output；Become according to the power
The driving control signal and the low voltage signal for changing unit determine whether the semiconductor devices breaks down.
2. a kind of semiconductor devices fault detection means according to claim 1, which is characterized in that the voltage handles mould
Block includes acquisition unit, voltage state signal converting unit and Phototube Coupling processing unit；
The acquisition unit, the voltage between default node for acquiring the power conversion unit；
The voltage state signal converting unit, for the voltage between the default node to be converted to voltage state signal；
The Phototube Coupling processing unit is believed for output low-voltage after carrying out Phototube Coupling processing to the voltage state signal
Number.
3. a kind of semiconductor devices fault detection means according to claim 2, which is characterized in that the voltage status letter
Number converting unit includes voltage conversion subunit and epidemic situation comparison subelement；
The voltage conversion subunit, for the voltage between the default node to be converted to comparison voltage；
The epidemic situation comparison subelement, for the comparison voltage to be compared with predetermined voltage threshold, according to comparison result
Output voltage status signal.
4. a kind of semiconductor devices fault detection means according to claim 2, which is characterized in that at the Phototube Coupling
Managing unit includes electro-optic conversion subelement, transmission unit and photoelectric conversion subelement；
The electro-optic conversion subelement, for the voltage state signal to be converted to optical signal；
The transmission unit, the optical signal transmission for converting the electro-optic conversion subelement are single to photoelectric conversion
Member；
The photoelectric conversion subelement, the optical signal for transmitting the transmission unit are converted to the low voltage signal.
5. a kind of semiconductor devices fault detection means according to claim 1, which is characterized in that the logic control mould
Block includes drive control unit and determination unit；
The drive control unit, for exporting the driving control signal to the power conversion according to preset control strategy
Unit；
The determination unit, for obtaining the low voltage signal and drive control letter of the voltage processing module output
Number；Determine whether the semiconductor devices breaks down according to the driving control signal and the low voltage signal.
6. a kind of semiconductor devices fault detection means according to claim 5, which is characterized in that the logic control mould
Block further includes hair wave control unit；
The hair wave control unit is forbidden described if determining the semiconductor devices fail for the determination unit
Drive control unit exports the driving control signal to the power conversion unit；Otherwise allow the drive control unit defeated
The driving control signal is to the power conversion unit out.
7. a kind of semiconductor devices fault detection means according to claim 6, which is characterized in that the hair wave control is single
Member exports preset driving signal to the function if being also used to the determination unit determines the semiconductor devices fail
Rate converter unit.
8. a kind of semiconductor devices fault detection method, which is characterized in that the method includes the steps:
Acquire the voltage between the default node of power conversion unit；
Voltage between the default node is converted into voltage state signal；
Low voltage signal is exported after carrying out Phototube Coupling processing to the voltage state signal；
It is determined in the power conversion unit according to the driving control signal of the low voltage signal and the power conversion unit
Semiconductor devices whether break down.
9. a kind of semiconductor devices fault detection method according to claim 8, which is characterized in that described described to preset
Voltage between node be converted to voltage state signal comprising steps of
Voltage between the default node is converted into comparison voltage；
The comparison voltage is compared with predetermined voltage threshold, according to comparison result output voltage status signal.
10. a kind of semiconductor devices fault detection method according to claim 8, which is characterized in that described to the electricity
Pressure condition signal carry out Phototube Coupling processing after export low voltage signal comprising steps of
The voltage state signal is converted into optical signal；
Transmit the optical signal；
The optical signal of transmission is converted into the low voltage signal.
11. a kind of semiconductor devices fault detection method according to claim 8, which is characterized in that described according to
The driving control signal of low voltage signal and the power conversion unit determines the semiconductor devices in the power conversion unit
Whether break down comprising steps of
If the driving control signal of the low voltage signal and the power conversion unit is not identical, it is determined that the power conversion
Semiconductor devices fail in unit；If the driving control signal phase of the low voltage signal and the power conversion unit
Together, it is determined that the semiconductor devices in the power conversion unit is normal.
12. a kind of semiconductor devices fault detection method according to claim 8, which is characterized in that described according to
The driving control signal of low voltage signal and the power conversion unit determines the semiconductor devices in the power conversion unit
It is further comprised the steps of: after whether breaking down
If it is determined that the semiconductor devices fail in the power conversion unit, then forbids exporting the driving control signal and arrive
The power conversion unit；Otherwise allow to export the driving control signal to the power conversion unit.
13. a kind of semiconductor devices fault detection method according to claim 12, which is characterized in that the method is also wrapped
Include step:
If it is determined that the semiconductor devices fail in the power conversion unit, exports preset driving signal to the power
Converter unit.
14. a kind of converter, which is characterized in that the converter includes semiconductor devices event as claimed in claim 1 to 7
Hinder detection device.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112083221A (en) * | 2020-10-15 | 2020-12-15 | 珠海格力电器股份有限公司 | Fault detection method and device and electrical equipment |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009036656A (en) * | 2007-08-02 | 2009-02-19 | Tokyo Electric Power Co Inc:The | Failure detector of power module |
| CN101793938A (en) * | 2010-03-30 | 2010-08-04 | 哈尔滨工业大学 | On-line detection device and detection method for open-circuit fault of power tubes of inverter |
| CN103036415A (en) * | 2011-09-29 | 2013-04-10 | 台达电子企业管理（上海）有限公司 | Power semiconductor switch series circuit and control method thereof |
| CN103560655A (en) * | 2013-09-27 | 2014-02-05 | 株洲变流技术国家工程研究中心有限公司 | Driver and system thereof based on parallel connection of multiple power semiconductor devices |
| CN104049166A (en) * | 2014-06-30 | 2014-09-17 | 北京四方继保自动化股份有限公司 | Rapid fault detection circuit based on pulse feedback |
| CN106771955A (en) * | 2016-09-18 | 2017-05-31 | 深圳市禾望电气股份有限公司 | The device and method of semiconductor devices fault detect |
| CN206331081U (en) * | 2016-09-18 | 2017-07-14 | 深圳市禾望电气股份有限公司 | The device of semiconductor devices fault detect |
| CN107450004A (en) * | 2017-07-31 | 2017-12-08 | 珠海格力电器股份有限公司 | Fault detection method and circuit |
| CN208000357U (en) * | 2018-03-09 | 2018-10-23 | 深圳市禾望电气股份有限公司 | Semiconductor devices failure detector and converter |
-
2018
- 2018-03-09 CN CN201810196510.9A patent/CN110261752A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009036656A (en) * | 2007-08-02 | 2009-02-19 | Tokyo Electric Power Co Inc:The | Failure detector of power module |
| CN101793938A (en) * | 2010-03-30 | 2010-08-04 | 哈尔滨工业大学 | On-line detection device and detection method for open-circuit fault of power tubes of inverter |
| CN103036415A (en) * | 2011-09-29 | 2013-04-10 | 台达电子企业管理（上海）有限公司 | Power semiconductor switch series circuit and control method thereof |
| CN103560655A (en) * | 2013-09-27 | 2014-02-05 | 株洲变流技术国家工程研究中心有限公司 | Driver and system thereof based on parallel connection of multiple power semiconductor devices |
| CN104049166A (en) * | 2014-06-30 | 2014-09-17 | 北京四方继保自动化股份有限公司 | Rapid fault detection circuit based on pulse feedback |
| CN106771955A (en) * | 2016-09-18 | 2017-05-31 | 深圳市禾望电气股份有限公司 | The device and method of semiconductor devices fault detect |
| CN206331081U (en) * | 2016-09-18 | 2017-07-14 | 深圳市禾望电气股份有限公司 | The device of semiconductor devices fault detect |
| CN107450004A (en) * | 2017-07-31 | 2017-12-08 | 珠海格力电器股份有限公司 | Fault detection method and circuit |
| CN208000357U (en) * | 2018-03-09 | 2018-10-23 | 深圳市禾望电气股份有限公司 | Semiconductor devices failure detector and converter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112083221A (en) * | 2020-10-15 | 2020-12-15 | 珠海格力电器股份有限公司 | Fault detection method and device and electrical equipment |
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