CN110244207A - Semiconductor devices fault detection method and device, converter - Google Patents
Semiconductor devices fault detection method and device, converter Download PDFInfo
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- CN110244207A CN110244207A CN201810196493.9A CN201810196493A CN110244207A CN 110244207 A CN110244207 A CN 110244207A CN 201810196493 A CN201810196493 A CN 201810196493A CN 110244207 A CN110244207 A CN 110244207A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
It includes: main power module, voltage processing module and judgment module that the present invention, which discloses a kind of semiconductor devices fault detection method and device, converter, described device,；Main power module includes the semiconductor devices and bridge arm inductance being connected in series, and the input terminal of voltage processing module is connect with bridge arm inductance in parallel, and the output end of voltage processing module is connect with judgment module；Voltage processing module, for acquiring the voltage of bridge arm inductance；The voltage of bridge arm inductance is converted into voltage state signal, exports low voltage signal after carrying out Phototube Coupling processing；Judgment module, for obtaining the low voltage signal of output；Determine whether semiconductor devices breaks down according to low voltage signal.The voltage of collected bridge arm inductance is converted to voltage state signal by the present invention, can the overcurrent of real-time detection semiconductor devices, short circuit, the failures such as straight-through by judgment module；Solve the problems, such as that the detection of existing semiconductor devices failure is poor without real-time, general applicability, highly resistance immunity and isolation.
Description
Technical field
The present invention relates to power electronics field more particularly to a kind of semiconductor devices fault detection method and device,
Converter.
Background technique
Current-rising-rate when semiconductor devices is to conducting is sensitive, when especially the devices such as GTO, GCT, IGCT are to conducting
Current-rising-rate is more sensitive.In order to limit current-rising-rate when semiconductor devices conducting, well known way is in semiconductor
Series current climbing limits reactor in circuit.When semiconductor devices overcurrent, short circuit, it is straight-through happen when, need rapidly
Overcurrent, short circuit, straight-through situation are detected and judged, and then controls energy and orderly releases, effectively prevent failure propagation.
It fast and accurately detects and judges semiconductor overcurrent, short circuit, lead directly to be the key point for carrying out product Global Macros.
Existing general detection method has significant limitations:
1), do not have real-time.Sense channel requires by filtering, memory and resets link, causes bridge arm to occur straight
It can not detected at the first time after logical failure, detect will lead in practical applications not in time is unable to quick start protection, from
And lead to secondary failure.
2), do not have general applicability.Current-rising-rate tolerance value, the bridge arm current climbing limitation electricity of semiconductor devices
It is closely bound up between anti-device numerical value, sense channel filtering numerical value.The complexity of parameters matching design is very high in practical application.
3), do not have highly resistance immunity.Existing detection circuit by electric signal transmit, under hyperbaric environment vulnerability to jamming compared with
Difference.
4), it is isolated poor.Existing detection circuit by electric signal transmit, with high-tension circuit cannot achieve reliably every
From safety is poor.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of semiconductor devices fault detection method and device, converter,
With solve existing semiconductor devices overcurrent, short circuit, straight-through detection do not have real-time, general applicability, highly resistance immunity with
And the problem that isolation is poor.
It is as follows that the present invention solves technical solution used by above-mentioned technical problem:
According to an aspect of the present invention, a kind of semiconductor devices fault detection means provided, described device includes: master
Power module, voltage processing module and judgment module；
The main power module include be connected in series semiconductor devices and bridge arm inductance, the voltage processing module it is defeated
Enter end to connect with the bridge arm inductance in parallel, the output end of the voltage processing module is connect with the judgment module；
The voltage processing module, for acquiring the voltage of the bridge arm inductance；The voltage of the bridge arm inductance is converted
For voltage state signal；Low voltage signal is exported after carrying out Phototube Coupling processing to the voltage state signal；
The judgment module, for obtaining the low voltage signal of the voltage processing module output；According to the low-voltage
Signal determines whether the semiconductor devices breaks down.
According to an aspect of the present invention, a kind of semiconductor devices fault detection method provided, the method includes steps
It is rapid:
Acquire the voltage of bridge arm inductance；
The voltage of the bridge arm inductance is converted into voltage state signal；
Low voltage signal is exported after carrying out Phototube Coupling processing to the voltage state signal；
Determine whether semiconductor devices breaks down according to the low voltage signal.
According to an aspect of the present invention, a kind of converter provided, the converter include above-mentioned semiconductor devices
Fault detection means.
Semiconductor devices fault detection method and device, the converter of the embodiment of the present invention, by collected bridge arm inductance
Voltage be converted to voltage state signal, can the overcurrent of real-time detection semiconductor devices, short circuit, straight-through etc. by judgment module
Failure；The detection for solving existing semiconductor devices failure does not have real-time, general applicability, highly resistance immunity and isolation
Poor problem.
Detailed description of the invention
Fig. 1 is the semiconductor devices fault detection means structural schematic diagram of the embodiment of the present invention；
Fig. 2 is voltage schematic diagram of processing module structure in the semiconductor devices fault detection means of the embodiment of the present invention；
Fig. 3 is that voltage state signal converting unit structure is shown in the semiconductor devices fault detection means of the embodiment of the present invention
It is intended to；
Fig. 4 is Phototube Coupling processing unit structural representation in the semiconductor devices fault detection means of the embodiment of the present invention
Figure；
Fig. 5 is judgment module structural schematic diagram in the semiconductor devices fault detection means of the embodiment of the present invention；
Fig. 6 is the first determination unit structural schematic diagram in the semiconductor devices fault detection means of the embodiment of the present invention；
Fig. 7 is another structural representation of the first determination unit in the semiconductor devices fault detection means of the embodiment of the present invention
Figure；
Fig. 8 is another structural schematic diagram of judgment module in the semiconductor devices fault detection means of the embodiment of the present invention；
Fig. 9 is another structural schematic diagram of semiconductor devices fault detection means of the embodiment of the present invention；
Figure 10 is the semiconductor devices fault detection method flow diagram of the embodiment of the present invention；
Figure 11 is voltage state signal flow path switch signal in the semiconductor devices fault detection method of the embodiment of the present invention
Figure；
Figure 12 is Phototube Coupling processing flow schematic diagram in the semiconductor devices fault detection method of the embodiment of the present invention；
Figure 13 is that failure flow diagram is determined in the semiconductor devices fault detection method of the embodiment of the present invention；
Figure 14 is that another flow diagram of failure is determined in the semiconductor devices fault detection method of the embodiment of the present invention；
Figure 15 is another flow diagram of semiconductor devices fault detection method of the embodiment of the present invention；
Figure 16 is the sequential organization schematic diagram of the embodiment of the present invention.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
In order to be clearer and more clear technical problems, technical solutions and advantages to be solved, tie below
Drawings and examples are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
First embodiment
As shown in Figure 1, first embodiment of the invention provides a kind of semiconductor devices fault detection means, described device packet
It includes: main power module 10, voltage processing module 20 and judgment module 30；
The main power module 10 includes the semiconductor devices 11 and bridge arm inductance 12 being connected in series, and the voltage handles mould
The input terminal of block 20 is connected in parallel with the bridge arm inductance 12, the output end and the judgment module of the voltage processing module 20
30 connections.
In the present embodiment, this is not restricted for the quantity of semiconductor devices 11 and bridge arm inductance 12, can be one and half
The situation of conductor device and a bridge arm inductance, or two or more semiconductor devices and bridge arm inductance.When
When for two or more bridge arm inductance, the voltage for acquiring one of bridge arm inductance is only needed at this time.
In the present embodiment, main power module 10 includes but is not limited to " I " type three-level topology circuit, three level of T-shape
Topological circuit, " Vienna-Like " three-level topology circuit, two level converter topological circuits, energy are released topological circuit etc..
The voltage processing module 20, for acquiring the voltage of the bridge arm inductance 12；By the electricity of the bridge arm inductance 12
Pressure is converted to voltage state signal；Low voltage signal is exported after carrying out Phototube Coupling processing to the voltage state signal.
In the present embodiment, the low voltage signal that the voltage processing module 20 exports is high level signal or low level
Signal.
It please refers to shown in Fig. 2, in the present embodiment, the voltage processing module 20 includes acquisition unit 21, voltage status
Signal conversion unit 22 and Phototube Coupling processing unit 23；
The acquisition unit 21, for acquiring the voltage of the bridge arm inductance 12.
The voltage state signal converting unit 22, for the voltage of the bridge arm inductance 12 to be converted to voltage status letter
Number.
It please refers to shown in Fig. 3, in the present embodiment, the voltage state signal converting unit 22 includes that voltage conversion is single
Member 221 and epidemic situation comparison subelement 222；
The voltage conversion subunit 221, for the voltage of the bridge arm inductance 12 to be converted to comparison voltage, substantially
It is the low-voltage converted high voltage to predeterminated voltage threshold voltage ratings match, referred to as comparison voltage；
The epidemic situation comparison subelement 222, for the comparison voltage to be compared with predetermined voltage threshold, according to than
Compared with result output voltage status signal.
The Phototube Coupling processing unit 23, for low to being exported after voltage state signal progress Phototube Coupling processing
Voltage signal.
It please refers to shown in Fig. 4, in the present embodiment, the Phototube Coupling processing unit 23 includes electro-optic conversion subelement
231, transmission unit 232 and photoelectric conversion subelement 233；
The electro-optic conversion subelement 231, for the voltage state signal to be converted to optical signal；
The transmission unit 232, the optical signal transmission for converting the electro-optic conversion subelement 231 give the photoelectricity
Conversion subunit 233；
The photoelectric conversion subelement 233, the optical signal for transmitting the transmission unit 232 are converted to the low electricity
Press signal.
In the present embodiment, it is handled by Phototube Coupling, i.e. electrical isolation, safety requirement can be met.
The judgment module 30, for obtaining the low voltage signal of the voltage processing module output；According to the low electricity
Pressure signal determines whether the semiconductor devices 11 breaks down.
In the present embodiment, the failure of the semiconductor devices 11 includes but is not limited to overcurrent, short circuit, straight-through etc..
It please refers to shown in Fig. 5, in one embodiment, the judgment module 30 includes low logic voltage processing unit
31, timing unit 32 and the first determination unit 33；
The low logic voltage processing unit 31, the low voltage signal exported for obtaining the voltage processing module 20,
Timing signal is generated according to the low voltage signal；
The timing unit 32, the timing signal for being generated according to the low logic voltage processing unit 31, is counted
When；
As illustratively, if the low voltage signal of the voltage processing module 20 output is low level, start to be counted
When；If the low voltage signal that the voltage processing module 20 exports is high level, stop timing；Otherwise it is also feasible.Start into
The period of row timing to stopping timing is the timing duration of the timing unit 32.
First determination unit 33 determines the semiconductor device for the timing duration according to the timing unit 32
Whether part breaks down.
It please refers to shown in Fig. 6, in this embodiment, first determination unit 33 includes the first comparing subunit 331
Subelement 332 is determined with first；
First comparing subunit 331, for by the timing duration of the timing unit 32 and preset time threshold into
Row compares；
Described first determines subelement 332, if the timing duration for the timing unit 32 is more than preset time threshold,
Then determine the semiconductor devices fail.
It please refers to shown in Fig. 7, in this embodiment, first determination unit 33 includes computation subunit 333, second
Comparing subunit 334 and second determines subelement 335；
The computation subunit 333, for calculating the semiconductor devices according to the timing duration of the timing unit 32
Electric current；
Second comparing subunit 334, for comparing the electric current of the semiconductor devices with predetermined current threshold
Compared with；
Described second determines subelement 335, if the electric current for the semiconductor devices is more than predetermined current threshold, sentences
The fixed semiconductor devices fail.
It please refers to shown in Fig. 8, in another embodiment, the judgment module 30 includes charge/discharge unit 34, energy storage
Unit 35 and the second determination unit 36；
The charge/discharge unit 34, the low voltage signal exported for obtaining the voltage processing module 20, according to described
Low voltage signal generates energy storage signal；
The energy-storage units 35, the energy storage signal for being generated according to the charge/discharge unit 34 carry out energy storage；
Second determination unit 36 determines described half for the size according to energy storage in the energy-storage units 35
Whether conductor device breaks down.
Fig. 9 is another structural schematic diagram of semiconductor devices fault detection means of the embodiment of the present invention, and described device is also wrapped
Include protective module 40；
The protective module 40 protects the semiconductor devices if being used for the semiconductor devices fail
Shield.
The present embodiment in order to better understand is said below in conjunction with deterministic process of the Figure 16 to semiconductor devices failure
It is bright:
As shown in figure 16, iLFor the electric current for flowing through bridge arm inductance 12, ULFor the voltage at 12 both ends of bridge arm inductance.
In t0~t1Moment flows through bridge arm when during the semiconductor devices 11 for bridge arm inductance 12 of connecting being on
Electric current linear rise since 0, the electric current rate of rise areMeanwhile the voltage U at 12 both ends of bridge arm inductanceLNumerical value be equal to U2,
U2Calculation formula are as follows:
Wherein, U2For t0~t1The voltage at 12 both ends of moment bridge arm inductance, lδFor bridge arm parasitic inductance (particular value), VdcFor
DC voltage in main power module.Due to L in bridge arm inductance 121It is far longer than lδ, therefore the voltage at 12 both ends of bridge arm inductance is close
Half of busbar voltage.
In t1~t2Moment, when process of the semiconductor devices 11 from off state on state of series connection bridge arm inductance 12
At the end of, the change of current also terminates, and semiconductor devices 11 is fully on, and the slope of the electric current of bridge arm inductance 12 becomes
It is influenced by outputting inductance and external inductors etc. in DC voltage in main power module 10, main power module 10,
Far smaller than t0~t1MomentThe voltage U at 12 both ends of bridge arm inductanceLNumerical value be equal to U1, the voltage at 12 both ends of bridge arm inductance
U1Also it is far smaller than U2。U1Calculation formula are as follows:
Wherein, U1For t1~t2The voltage at 12 both ends of moment bridge arm inductance, L1For the inductance (particular value) of bridge arm inductance 12,For t1~t2Moment flows through the current slope of bridge arm inductance 12.
Voltage conversion subunit 221 converts the high voltage of bridge arm inductance 12 to and predetermined voltage threshold UrefMatched ratio
Compared with voltage Ucmp, Ucmp=kcmp*UL, wherein kcmpFor voltage conversion coefficient.Predetermined voltage threshold UrefIt can be set to kcmp*U1<
Uref<kcmp*U2。
Comparison voltage UcmpWith predetermined voltage threshold UrefIt is compared, high level signal or low is exported according to comparison result
The duration of level signal, high level signal or low level signal can be with response voltage U2Duration.
As shown in figure 16, as inductive drop ULEqual to U2When, UcmpGreater than Uref, electric light in Phototube Coupling processing unit 23
Optical signal in conversion subunit 231 is luminance, and transmission unit 232 will be sent into photoelectric conversion subelement after optical signal transmission
233, the optical signal received is converted to low level by photoelectric conversion subelement 233；As inductive drop ULEqual to U1When, UcmpIt is less than
Uref, the optical signal in electro-optic conversion subelement 231 in Phototube Coupling processing unit 23 is non-light emitting state, transmission unit 232
Middle no optical signal transmission, when photoelectric conversion subelement 233 is detected in transmission unit 232 without optical signal transmission, photoelectric conversion
The output of unit 233 is high level.
Therefore, when receiving the output of Phototube Coupling processing unit 23 in judgment module 30 is low level, inductive drop UL
Equal to U2, 12 electric current of bridge arm inductance is according to slopeRise；It is defeated when receiving Phototube Coupling processing unit 23 in judgment module 30
When being out high level, inductive drop ULEqual to U1, 12 current slope of bridge arm inductance is
Low logic voltage processing unit 31 in judgment module 30 detect signal by high level jump be low level when, i.e.,
In the failing edge of pulse signal, timing unit 32 starts timing；Detect signal by low level jump be high level when, that is, exist
When the rising edge of pulse signal, timing unit 32 stops timing.
The timing duration t of timing unit 32cThe duration of low level state, i.e. bridge arm inductance 12 are in for pulse signal
The comparison voltage U at both endscmp(kcmp*UL) it is greater than predetermined voltage threshold UrefDuration.
Judgment module 30 can determine whether semiconductor devices 11 breaks down by two ways:
If a kind of mode is the timing duration t of timing unit 32cMore than preset time threshold, determine that semiconductor devices 11 is sent out
Raw failure.In this approach, preset time threshold can go out according to electrical parameter calculation.Electric parameter therein be busbar voltage,
Switching frequency, filter inductance, inverter voltage grade.
It specifically, can be with by busbar voltage, switching frequency, filter inductance, inverter voltage grade according to well known theory
Obtain the maximum output peak point current I of main power modulep, pass through IpAnd the inductance value L of bridge arm inductance1, bridge arm inductance can be calculated
12 both end voltages areWhen, the maximum time of holding isWherein, k1It is big
In 1 coefficient, in order to prevent from malfunctioning and the safety coefficient of setting, it is 1.2 that the coefficient, which is generally arranged,.
As timing duration tcGreater than tu_maxWhen, illustrate that main power module output electric current has exceeded design value, semiconductor device
Part 11 is in overcurrent, short circuit or the malfunctions such as straight-through.
Another way is according to timing duration tcCalculate the electric current of semiconductor devices 11By the electricity of semiconductor devices 11
StreamWith predetermined current threshold IcompIt is compared, if the electric current of semiconductor devices 11More than predetermined current threshold Icomp, then
Determine that semiconductor devices 11 breaks down.Predetermined current threshold IcompCalculation formula be Icomp=k2×Ip, wherein IpFor main function
The maximum output peak point current of rate module, k2For the coefficient greater than 1, in order to prevent from malfunctioning and the safety coefficient of setting, one
As be arranged the coefficient be 1.2.
The calculation formula of 11 electric current of semiconductor devices isWhereinBy bridge arm inductance parameters and
Busbar voltage is calculated.
The semiconductor devices fault detection assembling device of the embodiment of the present invention, the voltage of collected bridge arm inductance is converted to
Voltage state signal can the overcurrent of real-time detection semiconductor devices, short circuit, the failures such as straight-through by judgment module；It solves existing
The detection of some semiconductor devices failures is without real-time, general applicability, highly resistance immunity and poor problem is isolated.
Second embodiment
As shown in Figure 10, second embodiment of the invention provides a kind of semiconductor devices fault detection method, the method packet
Include step:
S11, the voltage for acquiring bridge arm inductance.
S12, the voltage of the bridge arm inductance is converted into voltage state signal.
It please refers to shown in Figure 11, in the present embodiment, the voltage by the bridge arm inductance is converted to voltage status letter
Number comprising steps of
S121, the voltage of the bridge arm inductance is converted into comparison voltage；
S122, the comparison voltage is compared with predetermined voltage threshold, is believed according to comparison result output voltage state
Number.
S13, low voltage signal is exported after carrying out Phototube Coupling processing to the voltage state signal.
In the present embodiment, the low voltage signal of output is high level signal or low level signal.
It please refers to shown in Figure 12, in the present embodiment, after the progress Phototube Coupling processing to the voltage state signal
Export low voltage signal comprising steps of
S131, the voltage state signal is converted into optical signal；
S132, the transmission optical signal；
S133, the optical signal of transmission is converted into the low voltage signal.
In the present embodiment, it is handled by Phototube Coupling, i.e. electrical isolation, safety requirement can be met.
S14, determine whether semiconductor devices breaks down according to the low voltage signal.
In the present embodiment, the failure of the semiconductor devices 11 includes but is not limited to overcurrent, short circuit, straight-through etc..
It please refers to shown in Figure 13, it is in one embodiment, described that semiconductor devices is determined according to the low voltage signal
Whether break down comprising steps of
S141, the low voltage signal for obtaining output generate timing signal according to the low voltage signal；
S142, the timing signal according to generation carry out timing；
The triggering timing when low voltage signal meets preset condition, as illustratively, if the low voltage signal of output is low
Level then starts to carry out timing；If the low voltage signal of output is high level, stop timing；Otherwise it is also feasible.Start to carry out
The period of timing to stopping timing is timing duration.
S143, according to timing duration, determine whether the semiconductor devices breaks down.
In this embodiment, described according to timing duration, determining whether the semiconductor devices breaks down may include
Step:
The timing duration is compared with preset time threshold；
If the timing duration is more than preset time threshold, the semiconductor devices fail is determined.
In this embodiment, described according to timing duration, determining whether the semiconductor devices breaks down may include
Step:
The electric current of the semiconductor devices is calculated according to the timing duration；
The electric current of the semiconductor devices is compared with predetermined current threshold；
If the electric current of the semiconductor devices is more than predetermined current threshold, the semiconductor devices fail is determined.
It please refers to shown in Figure 14, in another embodiment, main power module further includes connecting with semiconductor devices
Energy-storage units, it is described according to the low voltage signal determine semiconductor devices whether break down comprising steps of
S144, the low voltage signal for obtaining output generate energy storage signal according to the low voltage signal；
S145, the energy storage signal according to generation carry out energy storage；When low voltage signal is low level, to energy storage list
Member starting charging, when low voltage signal is high level, to energy-storage units star t-up discharge.
S146, the size according to energy storage, determine whether the semiconductor devices breaks down.
Figure 15 is another flow diagram of semiconductor devices fault detection method of the embodiment of the present invention；The method is also wrapped
Include step:
If S15, the semiconductor devices fail, protect the semiconductor devices.
The voltage of collected bridge arm inductance is converted to electricity by the semiconductor devices fault detection method of the embodiment of the present invention
Pressure condition signal can the overcurrent of real-time detection semiconductor devices, short circuit, the failures such as straight-through by judgment module；It solves existing
Semiconductor devices failure detection without real-time, general applicability, highly resistance immunity and the poor problem of isolation.
3rd embodiment
Third embodiment of the invention provides a kind of converter, and the converter includes semiconductor device described in first embodiment
Part fault detection means.Semiconductor devices fault detection means can refer to foregoing teachings, and therefore not to repeat here.
The voltage of collected bridge arm inductance is converted to voltage state signal, passed through by the converter of the embodiment of the present invention
Judgment module, can the overcurrent of real-time detection semiconductor devices, short circuit, the failures such as straight-through；Solves existing semiconductor devices event
The detection of barrier is without real-time, general applicability, highly resistance immunity and poor problem is isolated.
It should be noted that above-mentioned apparatus embodiment and embodiment of the method belong to same design, specific implementation process is detailed
See embodiment of the method, and the technical characteristic in embodiment of the method is corresponding applicable in Installation practice, which is not described herein again.
Through the above description of the embodiments, those skilled in the art can be understood that above-described embodiment side
Method can be realized by means of software and necessary general hardware platform, naturally it is also possible to be realized by hardware, but very much
In the case of the former be more preferably embodiment.Based on this understanding, technical solution of the present invention is substantially in other words to existing
The part that technology contributes can be embodied in the form of software products, which is stored in a storage
In medium (such as ROM/RAM, magnetic disk, CD), including some instructions are used so that a terminal device (can be mobile phone, calculate
Machine, server, air conditioner or network equipment etc.) execute method described in each embodiment of the present invention.
Preferred embodiments of the present invention have been described above with reference to the accompanying drawings, not thereby limiting the scope of the invention.This
Without departing from the scope and spirit of the invention, there are many variations to implement the present invention by field technical staff, for example as one
The feature of a embodiment can be used for another embodiment and obtain another embodiment.It is all to use institute within technical concept of the invention
Any modifications, equivalent replacements, and improvements of work, should all be within interest field of the invention.
Claims (18)
1. a kind of semiconductor devices fault detection means, which is characterized in that described device includes: main power module, voltage processing
Module and judgment module；
The main power module includes the semiconductor devices and bridge arm inductance being connected in series, the input terminal of the voltage processing module
It is connect with the bridge arm inductance in parallel, the output end of the voltage processing module is connect with the judgment module；
The voltage processing module, for acquiring the voltage of the bridge arm inductance；The voltage of the bridge arm inductance is converted into electricity
Pressure condition signal；Low voltage signal is exported after carrying out Phototube Coupling processing to the voltage state signal；
The judgment module, for obtaining the low voltage signal of the voltage processing module output；According to the low voltage signal
Determine whether the semiconductor devices breaks down.
2. a kind of semiconductor devices fault detection means according to claim 1, which is characterized in that the voltage handles mould
Block includes acquisition unit, voltage state signal converting unit and Phototube Coupling processing unit；
The acquisition unit, for acquiring the voltage of the bridge arm inductance；
The voltage state signal converting unit, for the voltage of the bridge arm inductance to be converted to voltage state signal；
The Phototube Coupling processing unit is believed for output low-voltage after carrying out Phototube Coupling processing to the voltage state signal
Number.
3. a kind of semiconductor devices fault detection means according to claim 2, which is characterized in that the voltage status letter
Number converting unit includes voltage conversion subunit and epidemic situation comparison subelement；
The voltage conversion subunit, for the voltage of the bridge arm inductance to be converted to comparison voltage；
The epidemic situation comparison subelement, for the comparison voltage to be compared with predetermined voltage threshold, according to comparison result
Output voltage status signal.
4. a kind of semiconductor devices fault detection means according to claim 2, which is characterized in that at the Phototube Coupling
Managing unit includes electro-optic conversion subelement, transmission unit and photoelectric conversion subelement；
The electro-optic conversion subelement, for the voltage state signal to be converted to optical signal；
The transmission unit, the optical signal transmission for converting the electro-optic conversion subelement are single to photoelectric conversion
Member；
The photoelectric conversion subelement, the optical signal for transmitting the transmission unit are converted to the low voltage signal.
5. a kind of semiconductor devices fault detection means according to claim 1, which is characterized in that the judgment module packet
Include low logic voltage processing unit, timing unit and the first determination unit；
The low logic voltage processing unit, for obtaining the low voltage signal of the voltage processing module output, according to described
Low voltage signal generates timing signal；
The timing unit, the timing signal for being generated according to the low logic voltage processing unit carry out timing；
First determination unit determines whether the semiconductor devices is sent out for the timing duration according to the timing unit
Raw failure.
6. a kind of semiconductor devices fault detection means according to claim 5, which is characterized in that described first determines list
Member includes that the first comparing subunit and first determine subelement；
First comparing subunit, for the timing duration of the timing unit to be compared with preset time threshold；
Described first determines subelement, if the timing duration for the timing unit is more than preset time threshold, determines institute
State semiconductor devices fail.
7. a kind of semiconductor devices fault detection means according to claim 5, which is characterized in that described first determines list
Member includes computation subunit, the second comparing subunit and the second judgement subelement；
The computation subunit, for calculating the electric current of the semiconductor devices according to the timing duration of the timing unit；
Second comparing subunit, for the electric current of the semiconductor devices to be compared with predetermined current threshold；
It is described second determine subelement, if for the semiconductor devices electric current be more than predetermined current threshold, determine described in
Semiconductor devices fail.
8. a kind of semiconductor devices fault detection means according to claim 1, which is characterized in that the judgment module packet
Include charge/discharge unit, energy-storage units and the second determination unit；
The charge/discharge unit is believed for obtaining the low voltage signal of the voltage processing module output according to the low-voltage
Number generate energy storage signal；
The energy-storage units, the energy storage signal for being generated according to the charge/discharge unit carry out energy storage；
Second determination unit determines the semiconductor devices for the size according to energy storage in the energy-storage units
Whether break down.
9. -8 any a kind of semiconductor devices fault detection means according to claim 1, which is characterized in that described device
It further include protective module；
The protective module protects the semiconductor devices if being used for the semiconductor devices fail.
10. a kind of semiconductor devices fault detection method, which is characterized in that the method includes the steps:
Acquire the voltage of bridge arm inductance；
The voltage of the bridge arm inductance is converted into voltage state signal；
Low voltage signal is exported after carrying out Phototube Coupling processing to the voltage state signal；
Determine whether semiconductor devices breaks down according to the low voltage signal.
11. a kind of semiconductor devices fault detection method according to claim 10, which is characterized in that described by the bridge
The voltage of arm inductance be converted to voltage state signal comprising steps of
The voltage of the bridge arm inductance is converted into comparison voltage；
The comparison voltage is compared with predetermined voltage threshold, according to comparison result output voltage status signal.
12. a kind of semiconductor devices fault detection method according to claim 10, which is characterized in that described to the electricity
Pressure condition signal carry out Phototube Coupling processing after export low voltage signal comprising steps of
The voltage state signal is converted into optical signal；
Transmit the optical signal；
The optical signal of transmission is converted into the low voltage signal.
13. a kind of semiconductor devices fault detection method according to claim 10, which is characterized in that described according to
Low voltage signal determine semiconductor devices whether break down comprising steps of
The low voltage signal for obtaining output generates timing signal according to the low voltage signal；
According to the timing signal of generation, timing is carried out；
According to timing duration, determine whether the semiconductor devices breaks down.
14. a kind of semiconductor devices fault detection method according to claim 13, which is characterized in that described according to timing
Duration, determine the semiconductor devices whether break down comprising steps of
The timing duration is compared with preset time threshold；
If the timing duration is more than preset time threshold, the semiconductor devices fail is determined.
15. a kind of semiconductor devices fault detection method according to claim 13, which is characterized in that described according to timing
Duration, determine the semiconductor devices whether break down comprising steps of
The electric current of the semiconductor devices is calculated according to the timing duration；
The electric current of the semiconductor devices is compared with predetermined current threshold；
If the electric current of the semiconductor devices is more than predetermined current threshold, the semiconductor devices fail is determined.
16. a kind of semiconductor devices fault detection method according to claim 10, which is characterized in that described according to
Low voltage signal determine semiconductor devices whether break down comprising steps of
The low voltage signal for obtaining output generates energy storage signal according to the low voltage signal；
According to the energy storage signal of generation, energy storage is carried out；
According to the size of energy storage, determine whether the semiconductor devices breaks down.
17. any a kind of semiconductor devices fault detection method of 0-16 according to claim 1, which is characterized in that described
Method further comprises the steps of:
If the semiconductor devices fail protects the semiconductor devices.
18. a kind of converter, which is characterized in that the converter includes any semiconductor devices event of claim 1-9
Hinder detection device.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112003244A (en) * | 2020-07-31 | 2020-11-27 | 深圳市禾望电气股份有限公司 | Fault pre-judging method and system for power module |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103036415A (en) * | 2011-09-29 | 2013-04-10 | 台达电子企业管理（上海）有限公司 | Power semiconductor switch series circuit and control method thereof |
| CN105790746A (en) * | 2016-04-13 | 2016-07-20 | 华中科技大学 | Digital signal fiber transmission triggering system |
| CN205910289U (en) * | 2016-05-30 | 2017-01-25 | 国网山东省电力公司青岛供电公司 | A fault location system for rural power grids distribution network |
| CN106771955A (en) * | 2016-09-18 | 2017-05-31 | 深圳市禾望电气股份有限公司 | The device and method of semiconductor devices fault detect |
| CN206331081U (en) * | 2016-09-18 | 2017-07-14 | 深圳市禾望电气股份有限公司 | The device of semiconductor devices fault detect |
| CN206421199U (en) * | 2017-01-24 | 2017-08-18 | 中车青岛四方车辆研究所有限公司 | EMUs high-power isolated drive circuit |
| CN208334558U (en) * | 2018-03-09 | 2019-01-04 | 深圳市禾望电气股份有限公司 | Semiconductor devices fault detection means and converter |
-
2018
- 2018-03-09 CN CN201810196493.9A patent/CN110244207A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103036415A (en) * | 2011-09-29 | 2013-04-10 | 台达电子企业管理（上海）有限公司 | Power semiconductor switch series circuit and control method thereof |
| CN105790746A (en) * | 2016-04-13 | 2016-07-20 | 华中科技大学 | Digital signal fiber transmission triggering system |
| CN205910289U (en) * | 2016-05-30 | 2017-01-25 | 国网山东省电力公司青岛供电公司 | A fault location system for rural power grids distribution network |
| CN106771955A (en) * | 2016-09-18 | 2017-05-31 | 深圳市禾望电气股份有限公司 | The device and method of semiconductor devices fault detect |
| CN206331081U (en) * | 2016-09-18 | 2017-07-14 | 深圳市禾望电气股份有限公司 | The device of semiconductor devices fault detect |
| CN206421199U (en) * | 2017-01-24 | 2017-08-18 | 中车青岛四方车辆研究所有限公司 | EMUs high-power isolated drive circuit |
| CN208334558U (en) * | 2018-03-09 | 2019-01-04 | 深圳市禾望电气股份有限公司 | Semiconductor devices fault detection means and converter |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112003244A (en) * | 2020-07-31 | 2020-11-27 | 深圳市禾望电气股份有限公司 | Fault pre-judging method and system for power module |
| CN112003244B (en) * | 2020-07-31 | 2023-11-17 | 深圳市禾望电气股份有限公司 | Failure pre-judging method and system for power module |
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