CN206331081U - The device of semiconductor devices fault detect - Google Patents
The device of semiconductor devices fault detect Download PDFInfo
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- CN206331081U CN206331081U CN201621436633.8U CN201621436633U CN206331081U CN 206331081 U CN206331081 U CN 206331081U CN 201621436633 U CN201621436633 U CN 201621436633U CN 206331081 U CN206331081 U CN 206331081U
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Abstract
The utility model discloses a kind of device of semiconductor devices fault detect, described device includes main power model, voltage processing module and judge module, the main power model includes at least one semiconductor devices and bridge arm inductance of series connection, the voltage processing module and the bridge arm inductance in parallel, the judge module are connected with the voltage processing module；The voltage processing module, the voltage for gathering the bridge arm inductance, and be low-voltage by the voltage conversion of collection；The judge module, for the low-voltage after the conversion to be compared into threshold value with default first, second compares threshold value and is compared, the preparatory condition in comparative result and judge module judges whether the semiconductor devices breaks down；Described first compares threshold value compares threshold value less than or equal to second.The device and method that the utility model is provided can detect the excessively stream of semiconductor devices, short circuit, straight-through situation in real time.
Description
Technical field
The utility model is related to electronic technology field, especially relates to the device of semiconductor devices fault detect.
Background technology
Current-rising-rate when semiconductor devices is to conducting is sensitive, when especially the device such as GTO, GCT, IGCT is to conducting
Current-rising-rate is more sensitive.In order to limit current-rising-rate during semiconductor devices conducting, known way is in semiconductor
Series current climbing limits reactor in loop.When semiconductor devices excessively stream, short circuit, straight-through situation occur, it is necessary to rapid
Excessively stream, short circuit, straight-through situation are detected and judged, and then controls energy to release in order, failure propagation is effectively prevented.
Fast and accurately detect and judge semiconductor excessively stream, short circuit, straight-through situation be progress product Global Macros key
Point.Detection method generally used now has significant limitations：
(1) do not have a real-time, sense channel be required for after filtering, memory and reset link, cause bridge arm to occur straight
Can not be detected the very first time after logical failure, detect in actual applications will cause not in time can not quick starting protection, from
And cause secondary failure.
(2) do not have general applicability, the current-rising-rate tolerance value of semiconductor devices, bridge arm current climbing limitation electricity
It is closely bound up between anti-device numerical value, sense channel filtering numerical value.The complexity of parameters matching design is very high in practical application.
Utility model content
Main purpose of the present utility model is solved and existing partly led to provide a kind of device of semiconductor devices fault detect
Not the problem of body device excessively stream, short circuit, straight-through situation detection do not have real-time and general applicability.
The utility model proposes a kind of device of semiconductor devices fault detect, described device includes at least one by connecting
Main power model that individual semiconductor devices and bridge arm inductance is constituted, the voltage of the collection bridge arm inductance simultaneously turn the voltage of collection
It is changed to the voltage processing module of low-voltage and the low-voltage after the conversion is compared into threshold value, the second ratio with default first
It is compared compared with threshold value, the judgement the mould whether semiconductor devices breaks down is judged according to comparative result and preparatory condition
Block；The voltage processing module and the bridge arm inductance in parallel, the judge module is connected with the voltage processing module, described
First compares threshold value compares threshold value less than or equal to second.
Further, the voltage processing module includes high resistance sectional pressure circuit and proportional difference circuit, the high resistance sectional pressure
Circuit on one side connects the output of bridge arm inductance, other end connection proportional difference circuit, the proportional difference circuit other end connection
Judge module.
Further, the voltage processing module also includes add circuit, and the add circuit is connected to proportional difference electricity
Between road and judge module.
Further, the judge module includes comparison circuit and logic processing circuit, comparison circuit one end connection
The output of voltage processing module, the other end connects the input of logic processing circuit, and the logic processing circuit exports fault detect
As a result.
Further, described first when comparing threshold value and comparing threshold value less than second, and the comparison circuit includes in parallel two
Individual comparator first comparator and the second comparator, the comparison voltage of the first comparator compare threshold value, described for first
The comparison voltage of two comparators compares threshold value for second, and first comparator and the second comparator respectively export comparative result to patrolling
Process circuit is collected, fault detect is carried out for logic processing circuit.
Further, described first when comparing threshold value and comparing threshold value equal to second, and the comparison circuit includes one the 3rd
Comparator, the comparison voltage of the 3rd comparator compares threshold value for first, and the 3rd comparator exports comparative result to logic
Process circuit, fault detect is carried out for logic processing circuit.
Further, the logic processing circuit includes starting timing unit, stops timing unit and determining unit, its
In：
When the absolute value of the low-voltage after the conversion compares threshold value more than second, the startup timing unit starts meter
When；When the absolute value of the low-voltage after the conversion compares threshold value less than first, the stopping timing unit stopping timing；
The determining unit according to the duration of the timing, determine the semiconductor devices whether occur excessively stream, short circuit or
It is straight-through.
Further, the determining unit includes the judgement son list for judging whether the duration exceedes default time threshold
Member and when the duration exceedes default time threshold, judges that excessively stream, short circuit or straight-through the occur for the semiconductor devices
One judges subelement.
Further, the determining unit includes calculating of the electric current of semiconductor devices according to the duration calculation
The electric current of semiconductor devices described in unit, comparison is with the comparing subunit of default current threshold and when the semiconductor devices
When electric current is more than the current threshold, second for judging the semiconductor devices generation excessively stream, short circuit or leading directly to judges subelement.
Further, described device also includes protection module, and the main power model and judge module are connected respectively.
Further, the protection module includes optical fiber transmission circuit and driving processing unit, the optical fiber transmission circuit
One end connection judgment module, other end connection driving processing unit, the other end of the driving processing unit connects the main work(
The semiconductor devices of rate module.
Further, the judge module includes starting charge/discharge unit, energy-storage units, determining unit, wherein：
When the absolute value of the low-voltage after the conversion compares threshold value more than second, the startup charge/discharge unit is to storage
Can unit progress energy energy storage；When the absolute value of the low-voltage after the conversion compares threshold value less than first, the startup is filled
Discharge cell carries out energy to energy-storage units and released；
The energy-storage units store rechargeable energy in charge/discharge unit charge initiation；Discharge and start in charge/discharge unit
When, the energy for storage of releasing；
The determining unit stored according to energy-storage units in energy size, determine whether the semiconductor devices occurred
Stream, it is short-circuit or straight-through.
The voltage for the bridge arm inductance that the utility model embodiment is connected by detecting in real time with semiconductor devices, by bridge
The com-parison and analysis of arm inductive drop, preparatory condition in comparative result and judge module judges whether semiconductor devices is sent out
Raw excessively stream, short circuit, straight-through situation.The device and method of the utility model embodiment is applied to various semiconductor devices and topology is tied
Structure, with general applicability.
Brief description of the drawings
Fig. 1 is the structure chart of the device for the semiconductor devices fault detect that the utility model embodiment one is provided；
Fig. 2 be the utility model embodiment one provide semiconductor devices fault detect device in main power model knot
Composition；
Fig. 3 be the utility model embodiment one provide semiconductor devices fault detect device in main power model it is another
One structure chart；
Fig. 4 be the utility model embodiment one provide semiconductor devices fault detect device in main power model again
One structure chart；
Fig. 5 be the utility model embodiment one provide semiconductor devices fault detect device in main power model again
One structure chart；
Fig. 6 is the dress centre adjustment voltage processing module for the semiconductor devices fault detect that the utility model embodiment one is provided
Structure chart；
Fig. 7 be the utility model embodiment one provide semiconductor devices fault detect device in judge module structure
Figure；
Fig. 8 be the utility model embodiment one provide semiconductor devices fault detect device in logic processing circuit
Structure chart；
Fig. 9 is another structure chart of the device for the semiconductor devices fault detect that the utility model embodiment one is provided；
Figure 10 be the utility model embodiment one provide semiconductor devices fault detect device in judge module knot
Composition；
Figure 11 be the utility model embodiment one provide semiconductor devices fault detect device in semiconductor devices
The schematic diagram of current-rising-rate；
Figure 12 be the utility model embodiment two provide semiconductor devices fault detect device in judge module knot
Composition.
Realization, functional characteristics and the advantage of the utility model purpose will be described further referring to the drawings in conjunction with the embodiments.
Embodiment
It should be appreciated that specific embodiment described herein is not used to limit this only to explain the utility model
Utility model.
Embodiment one
The utility model embodiment one proposes a kind of device of semiconductor devices fault detect.As shown in figure 1, this practicality is new
The device of type embodiment one includes main power model 10, voltage processing module 20 and judge module 30, and main power model 10 includes
(Fig. 1 is at least one semiconductor devices 11 and bridge arm inductance 12 of series connection with a semiconductor devices 11, a bridge arm inductance 12
It can be two or more bridge arm inductance 12 in example, actual design, but only need to gather one of bridge arm during collection voltages
The voltage of inductance 12), voltage processing module 20 is in parallel with bridge arm inductance 12, and judge module 30 is connected with voltage processing module 20.
Wherein,
Voltage processing module 20, the voltage of collection bridge arm inductance 12, and be by the voltage conversion of the bridge arm inductance 12 of collection
Low-voltage；
Judge module 30, is compared threshold value with default first by the low-voltage after conversion, second compares threshold value and be compared,
Judge whether the semiconductor devices breaks down according to comparative result and preparatory condition.Specifically, when comparative result is met
Triggering timing during preparatory condition, and judge whether semiconductor devices 11 breaks down according to the duration of timing, first compares threshold value
Compare threshold value less than or equal to second.
Wherein, main power model 10 includes but is not limited to " I " type three-level topology circuit (as shown in Figure 2), the electricity of T-shape three
Flat topological circuit (as shown in Figure 3), " Vienna-Like " three-level topology circuit, two level converter topological circuit (such as Fig. 4
It is shown), energy releases topological circuit (as shown in Figure 5) etc..
As shown in fig. 6, voltage processing module 20 includes high resistance sectional pressure circuit 21 and proportional difference circuit 22, high resistance sectional pressure electricity
The output of the one end of road 21 connection bridge arm inductance 12, other end connection proportional difference circuit 22, the other end of proportional difference circuit 22 connects
Connect judge module 30.Further, voltage processing module may also include add circuit (not shown), and add circuit is connected to ratio
Between example difference channel and judge module, the real-time voltage of collection is converted into the ripple of the different amplitudes of antiphase (180 ° of phases)
Shape.
As shown in fig. 7, judge module 30 includes comparison circuit 31 and logic processing circuit 32, the connection of the one end of comparison circuit 31
The output of voltage processing module 20, the other end connects the input of logic processing circuit 32, the output failure inspection of logic processing circuit 32
Survey result.
Further, first when comparing threshold value and comparing threshold value less than second, and comparison circuit 31 includes in parallel two and compared
The comparator 312 of device first comparator 311 and second, the comparison voltage of first comparator 311 compares threshold value for first, and second compares
The comparison voltage of device 312 compares threshold value for second, and the comparator 312 of first comparator 311 and second respectively exports comparative result
To logic processing circuit 32, fault detect is carried out for logic processing circuit 32.
When first, which compares threshold value, compares threshold value equal to second, comparison circuit 31 only needs the 3rd comparator, and (figure is not
Show), now the 3rd comparator exports comparative result to logic processing circuit, and failure inspection is carried out for logic processing circuit
Survey.
Further, as shown in figure 8, logic processing circuit 32 includes starting timing unit 321, stops timing unit 322
With determining unit 323, wherein：
When the absolute value for starting the low-voltage of timing unit 321 after conversion compares threshold value more than second, start timing；Stop
When only the absolute value of low-voltage of the timing unit 322 after the conversion compares threshold value less than first, stop timing.
Specifically,
Low-voltage after conversion with real-time voltage with phase when, when the low-voltage after conversion compares threshold value more than second, open
Dynamic timing unit 321 starts timing；When the low-voltage after conversion compares threshold value less than first, stop timing unit 322 and stop
Timing；
When low-voltage and real-time voltage after conversion are anti-phase, when the low-voltage after conversion compares threshold value less than first, open
Dynamic timing unit 321 starts timing；When the low-voltage after conversion compares threshold value more than second, stop timing unit 322 and stop
Timing；
Determining unit 323 determines whether semiconductor devices 11 occurs excessively stream, short-circuit or straight-through according to the duration of timing.
As shown in Figure 9, Figure 10, the utility model embodiment one may also include a protection module 40, when semiconductor devices 11
Generation excessively stream, it is short-circuit or straight-through when, protection module 40 starts the protection to main power model 10.The protection module 40 includes optical fiber
Transtation mission circuit 41 and driving processing unit 42, one end connection judgment module 30 of optical fiber transmission circuit 41, other end connection are driven
Dynamic processing unit 42, the other end of the driving processing unit 42 connects the semiconductor devices 11 of main power model 10.
As shown in figure 11, Figure 11 for the two ends of bridge arm inductance 12 voltage and flow through the current diagram of bridge arm inductance 12, its
In, iLTo flow through the electric current of bridge arm inductance 12, uLFor the voltage at the two ends of bridge arm inductance 12.
In t0~t1At the moment, when during the semiconductor devices 11 for bridge arm inductance 12 of connecting is on, flow through bridge arm
Electric current linear rise since 0, the electric current rate of rise isMeanwhile, the voltage u at the two ends of bridge arm inductance 12LNumerical value be equal to u2：
Wherein, u2For t0~t1The voltage at the two ends of moment bridge arm inductance 12, lδIt is particular value, V for bridge arm parasitic inductancedcFor
DC voltage in main power model 10.Due to bridge arm inductance 12L1It is far longer than lδ, therefore the voltage at the two ends of bridge arm inductance 12 is close
Half of busbar voltage.
In t1~t2Moment, when process of the semiconductor devices 11 from off state to conducting state of series connection bridge arm inductance 12
At the end of, the change of current also terminates, and semiconductor devices 11 is fully on, and the slope of the electric current of bridge arm inductance 12 is changed intoIn terms of outputting inductance in DC voltage, main power model 10 in main power model 10 and external inductors
Influence,Far smaller than t0To t1MomentThe voltage u at the two ends of bridge arm inductance 12LNumerical value be equal to u1, bridge arm inductance
The voltage u at 12 two ends1Also it is far smaller than u2。u1Computing formula be：
Wherein, u1For t1~t2The voltage at the two ends of moment bridge arm inductance 12, L1It is particular value for bridge arm inductance 12,For t1
~t2Moment flows through the current slope of bridge arm inductance 12.
Specifically, the high voltage at the two ends of bridge arm inductance 12 is treated as being available for the judge module 30 make by voltage processing module 20
Low-voltage uc, herein, low-voltage ucCan be with phase or anti-phase, the high resistance sectional pressure circuit 21 shown in Fig. 6 with real-time voltage
With proportional difference circuit 22, real-time voltage is converted into the waveform of the different amplitudes of same-phase；Bleeder circuit, ratio can also be passed through
Difference channel and the add circuit being connected with proportional difference circuit, are converted into antiphase (180 ° of phases) different by real-time voltage
The waveform of amplitude.In the utility model embodiment, using the low-voltage of the waveform of the different amplitude of same-phase after being converted shown in Fig. 6 as
Example is described.
Low-voltage u after processingcWith the voltage u of bridge arm inductance 12LRelation be：
uc=k0*uL,
Wherein, k0For ucAnd uLBetween proportionality coefficient, numerical value be less than 1.
Judge module 30 is by the low-voltage u after conversioncCompared threshold value V with default firstref_H1, second compare threshold value
Vref_H2It is compared, judges whether semiconductor devices 11 occurs excessively stream, short-circuit or straight-through；First compares threshold value Vref_H1With
Two compare threshold value Vref_H2Meet following relational expression：
k0*u2＞ Vref_H2＞ Vref_H1＞ k0*u1。
Judge module 30 sets two comparators 312 of comparator first comparator 311 and second, it is assumed that ucMore than the first ratio
Compared with threshold value Vref_H1When, the output low level signal of first comparator 311, conversely, working as ucCompare threshold value V less than secondref_H2When,
Second comparator 312 exports high level signal.Then it is implemented as follows：
When timer is without timing, when first comparator 311 exports low level signal, the second comparator 312 exports low
During level signal, start the triggering timing device timing of timing unit 321；
Timer is just in timing, and when first comparator 311 exports high level signal, the second comparator 312 exports high electricity
During ordinary mail, stop the triggering timing device of timing unit 322 and stop timing.
It should be noted that in the other embodiment of this case, can also set and work as ucCompare threshold value V less than firstref_H1
When, the output low level signal of first comparator 311, conversely, working as ucCompare threshold value V more than secondref_H2When, the second comparator 312
High level signal is exported, logic rules are then accordingly adjusted, herein without repeating.
Determining unit 323 may determine that semiconductor according to the output result of the comparator 312 of first comparator 311 and second
The on off state of device 11.When starting timing, illustrate that semiconductor devices 11 is begun to turn on, now, the electric current of bridge arm inductance 12 is pressed
According to slopeRise, meanwhile, the both end voltage of bridge arm inductance 12 is u2.When stopping timing, illustrate that semiconductor devices 11 is complete
Conducting, now, the electric current of bridge arm inductance 12 is according to slopeRise, meanwhile, the both end voltage of bridge arm inductance 12 is u1。
Determining unit 323 determines that the state for flowing through semiconductor devices 11 can be carried out by the following two kinds mode：
One is judging whether duration exceedes default time threshold；When duration exceedes default time threshold, judge
Excessively stream, short-circuit or straight-through occurs for semiconductor devices 11, now, and time threshold is can to react electricity according to what electrical parameter calculation went out
Stream has exceeded the time of design load, and electric parameter therein is busbar voltage, switching frequency, filter inductance, inverter voltage etc.
Level.
According to known theory, it can obtain inverse by busbar voltage, switching frequency, filter inductance, inverter voltage grade
Become the maximum output peak point current I of devicep, pass through IpAnd the inductance value of bridge arm inductance 12, the both end voltage of bridge arm inductance 12 can be calculated
ForWhen maximum time for keepingWherein, uLFor the voltage at the two ends of bridge arm inductance 12,
L1For the numerical value of bridge arm inductance 12, IpFor the maximum output peak point current of main power model 10, k1For the coefficient more than 1, i.e., in order to
The safety coefficient for preventing misoperation and setting, it is 1.2 typically to set the coefficient.
As duration tcMore than tu_maxWhen, illustrate that inverter output current exceeds design load, semiconductor devices 11 is in
Excessively stream, short circuit or pass-through state, judge module 30 upload fault-signal to protection module 40 by optical fiber in real time.
The second is according to the electric current of duration calculation semiconductor devices 11, comparing the electric current and default electricity of semiconductor devices 11
Threshold value is flowed, when the electric current of semiconductor devices 11 is more than current threshold, judges that excessively stream, short circuit or straight occur for semiconductor devices 11
It is logical.
The current values of the semiconductor devices 11 calculated in real time are：
Wherein, tcFor the real-time timing numerical value of logic processor 32,Pass through the parameter of bridge arm inductance 12 and busbar voltage meter
Obtain.
According to the electric current i of the semiconductor devices 11 calculatedL1With default current threshold IcompIt is compared, works as iL1It is more than
IcompWhen, judge that semiconductor devices 11 is in excessively stream, short-circuit or straight-through, pass through optical fiber in real time and upload fault-signal to protection module
40.Current threshold IcompIt is calculated as follows：
Icomp=k2*Ip
Wherein, IpFor the maximum output peak point current of main power model 10, k2It is to prevent malfunction for the coefficient more than 1
The safety coefficient made and set, it is 1.2 typically to set the coefficient.
It should be noted that the signified failure of the utility model embodiment one refers to excessively stream, short circuit or straight-through failure situation.
The utility model can only detect that semiconductor devices 11 breaks down roughly, it is impossible to detect to happens is that excessively stream, short circuit still
It is straight-through.
The utility model embodiment one is led to by detecting the voltage of the bridge arm inductance 12 connected with semiconductor devices 11 in real time
The com-parison and analysis to the voltage of bridge arm inductance 12 is crossed, the then triggering timing, and according to timing when result of the comparison meets trigger condition
Duration monitor whether semiconductor devices 11 occurs excessively stream, short circuit, straight-through situation in real time.Meanwhile, compared with prior art, this reality
In device with new embodiment one, the partial pressure to bridge arm inductance 12 does not use the electric capacity of discharge and recharge, but gathers bridge in real time
The voltage of arm inductance 12 and processing, therefore delay is not resulted in, improve the real-time of breakdown judge.
Embodiment two
The utility model embodiment two proposes a kind of device of semiconductor devices fault detect.It is different from embodiment one, such as
Shown in Figure 12, in the utility model embodiment two, judge module 30 also includes starting charge/discharge unit 34 and energy-storage units 35,
When the absolute value for starting the low-voltage of charge/discharge unit 34 after conversion compares threshold value more than second, to energy storage
Unit 35 carries out energy energy storage；When the absolute value of the low-voltage after the conversion compares threshold value less than first, to energy-storage units
35 progress energy are released；
Energy-storage units 35 store rechargeable energy when starting the charging of charge/discharge unit 34；Put starting charge/discharge unit 34
When electric, the energy for storage of releasing；
The determining unit 33 determines whether semiconductor devices 11 occurs according to the size of energy in the storage of energy-storage units 34
It is excessively stream, short-circuit or straight-through.
Should be noted yes, judge module 30 can as needed only set startup timing unit 31, stop timing unit 32,
Determining unit 33 only sets startup charge/discharge unit 34, energy-storage units 35, determining unit 33.Specifically, in fig. 12, when
When one comparative level and the second comparative level all put high, high level is exported with door, driving NPN triode conducting, is storage capacitor
Charging；When the first comparative level and the second comparative level are all set low, low level is exported with door, driving PNP triode conducting is
Storage capacitor discharges；When the first comparative level and the second comparative level are respectively 10 or 01, in Dead Time, the poles of PNP tri-
Pipe and NPN triode are turned off, and are neither charged nor are discharged.When the voltage that energy-storage units 35 are exported is more than predeterminated voltage, really
The output of order member 33 judges signal.
The utility model embodiment two can be implemented
No generation excessively stream, short circuit, straight-through situation.
Preferred embodiment of the present utility model is the foregoing is only, the scope of the claims of the present utility model is not thereby limited,
Equivalent structure or equivalent flow conversion that every utilization the utility model specification and accompanying drawing content are made, or directly or indirectly fortune
Used in other related technical fields, similarly it is included in scope of patent protection of the present utility model.
Claims (12)
1. a kind of device of semiconductor devices fault detect, it is characterised in that described device include by connect at least one half
The voltage conversion of collection is simultaneously by main power model that conductor device and bridge arm inductance are constituted, the voltage of the collection bridge arm inductance
The voltage processing module of low-voltage and the low-voltage after the conversion is compared into threshold value with default first, second compares threshold
Value is compared, and the judge module whether semiconductor devices breaks down is judged according to comparative result and preparatory condition；Institute
Voltage processing module and the bridge arm inductance in parallel are stated, the judge module is connected with the voltage processing module, described first
Compare threshold value and compare threshold value less than or equal to second.
2. device as claimed in claim 1, it is characterised in that the voltage processing module includes high resistance sectional pressure circuit and ratio
Difference channel, the high resistance sectional pressure circuit on one side connects the output of bridge arm inductance, other end connection proportional difference circuit, the ratio
Example difference channel other end connection judgment module.
3. device as claimed in claim 2, it is characterised in that the voltage processing module also includes add circuit, described to add
Method circuit is connected between proportional difference circuit and judge module.
4. device as claimed in claim 1, it is characterised in that the judge module includes comparison circuit and logical process electricity
Road, described comparison circuit one end connects the output of voltage processing module, and the other end connects the input of logic processing circuit, described to patrol
Collect process circuit output failure detection result.
5. device as claimed in claim 4, it is characterised in that described first compares threshold value when comparing threshold value less than second, institute
Stating comparison circuit includes the two comparator first comparators and the second comparator of parallel connection, the comparison voltage of the first comparator
Compare threshold value for first, the comparison voltage of second comparator compares threshold value, first comparator and the second comparator for second
Comparative result is exported to logic processing circuit respectively, fault detect is carried out for logic processing circuit.
6. device as claimed in claim 4, it is characterised in that described first compares threshold value when comparing threshold value equal to second, institute
Stating comparison circuit includes the 3rd comparator, and the comparison voltage of the 3rd comparator compares threshold value for first, and the 3rd compares
Device exports comparative result to logic processing circuit, and fault detect is carried out for logic processing circuit.
7. the device as described in claim 5 or 6, it is characterised in that the logic processing circuit includes starting timing unit, stopped
Only timing unit and determining unit, wherein：
When the absolute value of the low-voltage after the conversion compares threshold value more than second, the startup timing unit starts timing；
When the absolute value of the low-voltage after the conversion compares threshold value less than first, the stopping timing unit stopping timing；
The determining unit determines whether the semiconductor devices occurs excessively stream, short-circuit or straight-through according to the duration of the timing.
8. device as claimed in claim 7, it is characterised in that the determining unit includes judging whether the duration exceedes in advance
If time threshold judgment sub-unit and when the duration exceedes default time threshold, judge semiconductor devices hair
Raw excessively stream, short circuit or straight-through first judge subelement.
9. device as claimed in claim 7, it is characterised in that the determining unit is included half according to the duration calculation
The sub- list of comparison of the electric current of semiconductor devices and default current threshold described in the computation subunit of the electric current of conductor device, comparison
Member and when the electric current of the semiconductor devices is more than the current threshold, judges that excessively stream, short circuit occur for the semiconductor devices
Or straight-through second judges subelement.
10. the device as described in any one of claim 1 to 6, it is characterised in that described device also includes protection module, respectively
Connect the main power model and judge module.
11. device as claimed in claim 10, it is characterised in that the protection module is included at optical fiber transmission circuit and driving
Unit is managed, optical fiber transmission circuit one end connection judgment module, other end connection driving processing unit, the driving processing is single
The other end of member connects the semiconductor devices of the main power model.
12. device as claimed in claim 1, it is characterised in that the judge module includes starting charge/discharge unit, energy storage list
Member, determining unit, wherein：
When the absolute value of the low-voltage after the conversion compares threshold value more than second, the startup charge/discharge unit is to energy storage list
Member carries out energy energy storage；When the absolute value of the low-voltage after the conversion compares threshold value less than first, the startup discharge and recharge
Unit carries out energy to energy-storage units and released；
The energy-storage units store rechargeable energy in charge/discharge unit charge initiation；When charge/discharge unit discharges and started, let out
Put the energy of storage；
The determining unit stored according to energy-storage units in energy size, determine the semiconductor devices whether occur excessively stream,
It is short-circuit or straight-through.
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| CN201621060251X | 2016-09-18 | ||
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106771955A (en) * | 2016-09-18 | 2017-05-31 | 深圳市禾望电气股份有限公司 | The device and method of semiconductor devices fault detect |
| CN109901057A (en) * | 2019-04-15 | 2019-06-18 | 苏州浪潮智能科技有限公司 | A kind of Fault Locating Method, device, equipment and storage medium |
| CN110244207A (en) * | 2018-03-09 | 2019-09-17 | 深圳市禾望电气股份有限公司 | Semiconductor devices fault detection method and device, converter |
| CN110261752A (en) * | 2018-03-09 | 2019-09-20 | 深圳市禾望电气股份有限公司 | Semiconductor devices fault detection method and device, converter |
| CN111751692A (en) * | 2019-03-26 | 2020-10-09 | 维谛技术有限公司 | Direct connection detection and protection method and device of IGBT |
| CN112147427A (en) * | 2019-06-29 | 2020-12-29 | 新疆金风科技股份有限公司 | Fault detection method and fault detection circuit of power module |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106771955A (en) * | 2016-09-18 | 2017-05-31 | 深圳市禾望电气股份有限公司 | The device and method of semiconductor devices fault detect |
| CN110244207A (en) * | 2018-03-09 | 2019-09-17 | 深圳市禾望电气股份有限公司 | Semiconductor devices fault detection method and device, converter |
| CN110261752A (en) * | 2018-03-09 | 2019-09-20 | 深圳市禾望电气股份有限公司 | Semiconductor devices fault detection method and device, converter |
| CN111751692A (en) * | 2019-03-26 | 2020-10-09 | 维谛技术有限公司 | Direct connection detection and protection method and device of IGBT |
| CN109901057A (en) * | 2019-04-15 | 2019-06-18 | 苏州浪潮智能科技有限公司 | A kind of Fault Locating Method, device, equipment and storage medium |
| CN112147427A (en) * | 2019-06-29 | 2020-12-29 | 新疆金风科技股份有限公司 | Fault detection method and fault detection circuit of power module |
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