CN208000357U - Semiconductor devices failure detector and converter - Google Patents
Semiconductor devices failure detector and converter Download PDFInfo
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- CN208000357U CN208000357U CN201820325287.9U CN201820325287U CN208000357U CN 208000357 U CN208000357 U CN 208000357U CN 201820325287 U CN201820325287 U CN 201820325287U CN 208000357 U CN208000357 U CN 208000357U
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Abstract
The utility model discloses a kind of semiconductor devices failure detector and converter, described device include:Main power module, voltage processing module and Logic control module;Main power module includes energy-storage units and power conversion unit, and power conversion unit includes semiconductor devices;Voltage processing module, the voltage between default node for acquiring power conversion unit;Voltage between default node is converted into voltage state signal;Low voltage signal is exported after carrying out Phototube Coupling processing to voltage state signal;Logic control module, the low voltage signal for obtaining the output of voltage processing module;Determine whether semiconductor devices breaks down according to the driving control signal of power conversion unit and low voltage signal.The utility model can detect semiconductor devices failure in real time by voltage processing module and Logic control module;Solve the problems, such as that the detection of existing semiconductor devices failure is poor without real-time, highly resistance immunity and isolation.
Description
Technical field
The utility model is related to power electronics field more particularly to a kind of semiconductor devices failure detector and
Converter.
Background technology
Semiconductor devices is as the core component in power conversion unit, and after breaking down, both end voltage can occur
Change, causes the voltage status of the key node of power conversion unit that can also change;On the other hand, semiconductor devices is being sent out
Before raw failure, itself characteristic will produce exception, cause the voltage at both ends that can also create a difference with voltage when regular event, together
Sample can cause the voltage status of the key node of power conversion unit to generate change.By detecting crucial section in power conversion unit
The voltage status at point both ends, so that it may to judge whether the semiconductor in power conversion unit is abnormal.After judging exception, in time
Protection act is carried out, secondary failure and failure propagation can be prevented.
It fast and accurately detects and judges semiconductor overcurrent, short circuit, lead directly to be the key point for carrying out product Global Macros.
Existing general detection method has significant limitations:
1), do not have real-time.Sense channel is required for filtered, memory and resets link, causes bridge arm to occur straight
Can not detected at the first time after logical failure, detect in practical applications will cause not in time cannot quick starting protection, from
And lead to secondary failure.
2), do not have highly resistance immunity.Existing detection circuit is transmitted by electric signal, under hyperbaric environment vulnerability to jamming compared with
Difference.
3), it is isolated poor.Existing detection circuit is transmitted by electric signal, with high-tension circuit cannot achieve reliably every
From safety is poor.
Utility model content
In view of this, the purpose of this utility model is to provide a kind of semiconductor devices failure detector and transformation
Device, with solve existing semiconductor devices overcurrent, short circuit, straight-through detection do not have real-time, highly resistance immunity and isolation compared with
The problem of difference.
Technical solution is as follows used by the utility model solves above-mentioned technical problem:
One side according to the present utility model, a kind of semiconductor devices failure detector provided, described device packet
It includes:Main power module, voltage processing module and Logic control module;
The main power module includes energy-storage units and power conversion unit, and the power conversion unit includes semiconductor device
Part;
The voltage processing module, the voltage between default node for acquiring the power conversion unit;It will be described
Voltage between default node is converted to voltage state signal;It is exported after carrying out Phototube Coupling processing to the voltage state signal
Low voltage signal;
The Logic control module, the low voltage signal for obtaining the voltage processing module output;According to the work(
The driving control signal of rate converter unit and the low voltage signal determine whether the semiconductor devices breaks down.
One side according to the present utility model, a kind of converter provided, the converter include above-mentioned semiconductor
Device fault detection device.
The semiconductor devices failure detector and converter of the utility model embodiment, by voltage processing module and
Logic control module can detect semiconductor devices failure in real time;The detection for solving existing semiconductor devices failure does not have
Real-time, highly resistance immunity and the poor problem of isolation.
Description of the drawings
Fig. 1 is the semiconductor devices failure detector structural schematic diagram of the utility model embodiment;
Fig. 2 is main power module architectures schematic diagram in the semiconductor devices failure detector of the utility model embodiment;
Fig. 3 shows for another structure of power conversion unit in the semiconductor devices failure detector of the utility model embodiment
It is intended to;
Fig. 4 handles mould for main power module in the semiconductor devices failure detector of the utility model embodiment and voltage
Block structure schematic diagram;
Fig. 5 is Logic control module structural representation in the semiconductor devices failure detector of the utility model embodiment
Figure;
Fig. 6 is another structural schematic diagram of semiconductor devices failure detector of the utility model embodiment;
Fig. 7 is protection module structural schematic diagram in the semiconductor devices failure detector of the utility model embodiment;
Fig. 8 is the sequential organization schematic diagram of the utility model embodiment.
The embodiments will be further described with reference to the accompanying drawings for the realization, functional characteristics and advantage of the utility model aim.
Specific implementation mode
In order to keep technical problem to be solved in the utility model, technical solution and advantageous effect clearer, clear, with
Under in conjunction with the accompanying drawings and embodiments, the present invention will be further described in detail.It should be appreciated that specific reality described herein
It applies example to be only used to explain the utility model, is not used to limit the utility model.
First embodiment
As shown in Figure 1, the utility model first embodiment provides a kind of semiconductor devices failure detector, described device
Including:Main power module 10, voltage processing module 20 and Logic control module 30;
The main power module 10 includes energy-storage units 11 and power conversion unit 12, and the power conversion unit 12 includes
Semiconductor devices (attached drawing is not shown).
As shown in Fig. 2, in the present embodiment, energy-storage units 11 can be in series by capacitance C1 and capacitance C2.It needs to illustrate
, this is not restricted for the quantity of capacitance, and series connection and/or parallel connection can be realized.
In the present embodiment, power conversion unit 12 includes but not limited to " I " type three-level topology circuit
(shown in Fig. 2), T-shape three-level topology circuit (shown in Fig. 3), " Vienna-Like " three-level topology circuit, two
Level converter topological circuit, energy are released topological circuit etc..This is not restricted for the quantity of power conversion unit 12.
The voltage processing module 20, the voltage between default node for acquiring the power conversion unit 12;It will
Voltage between the default node is converted to voltage state signal;After Phototube Coupling processing being carried out to the voltage state signal
Export low voltage signal.
In the present embodiment, the low voltage signal that the voltage processing module 20 exports is high level signal or low level
Signal.
Shown in please referring to Fig.4, in the present embodiment, the voltage processing module 20 includes high resistance sectional pressure circuit 21, ratio
Difference channel 22 and photoelectric isolating circuit 23;
The high resistance sectional pressure circuit 21 is parallel to the both ends of the default node of the power conversion unit 12, and the ratio is poor
Parallel circuit 22 is connect with high resistance sectional pressure circuit 21, and one end of the photoelectric isolating circuit 23 connects with the proportional difference circuit 22
It connects, the other end is connect with the Logic control module 30.
The high resistance sectional pressure circuit 21, the voltage between default node for acquiring the power conversion unit 12.It is high
Resistance bleeder circuit 21 can be made of current-limiting resistance and divider resistance.
As shown in Fig. 2 or Fig. 4, with the example that the power conversion unit 12 is " I " type three-level topology circuit, preset
Node can be DC side midpoint N and power conversion side midpoint L in power conversion unit 12, by between the both ends acquisition N and L
Voltage, to determine whether the semiconductor devices breaks down.In practical applications, electricity including but not limited between this 2 points
Pressure.
The proportional difference circuit 22, for the voltage between the default node to be converted to voltage state signal.Than
Example difference channel 22 is connected in parallel on the both ends of the divider resistance of high resistance sectional pressure circuit 21, can be by zener diode and filter circuit structure
At.In other embodiments, filter circuit can also omit.
The photoelectric isolating circuit 23, for exporting low-voltage after carrying out Phototube Coupling processing to the voltage state signal
Signal.
In the present embodiment, the photoelectric isolating circuit 23 is including light emitting module and by optical module, light emitting module and light
Module is connected by optical fiber.
Light emitting module is used to the voltage state signal being converted to optical signal;The light that optical fiber is used to convert light emitting module
Signal transmission is given by optical module;It is used to the optical signal that optical fiber transmits being converted to the low voltage signal by optical module.
In the present embodiment, by the isolation processing of photoelectric isolating circuit 23, i.e. electrical isolation, safety requirement can be met.
The Logic control module 30, the low voltage signal exported for obtaining the voltage processing module 20;According to institute
The driving control signal and the low voltage signal for stating power conversion unit 12 determine whether the semiconductor devices breaks down.
It please refers to shown in Fig. 5, in the present embodiment, the Logic control module 30 includes drive control unit 31 and determines
Unit 32;
The drive control unit 31, for exporting the driving control signal to the work(according to preset control strategy
Rate converter unit 12;
The determination unit 32, for obtaining the low voltage signal and the drive that the voltage processing module 20 exports
Dynamic control signal;Determine whether the semiconductor devices occurs event according to the driving control signal and the low voltage signal
Barrier.
Further, it refer again to shown in Fig. 5, the Logic control module 30 further includes hair wave control unit 33;
The hair wave control unit 33, if determining the semiconductor devices fail for the determination unit 32,
The drive control unit 31 is forbidden to export the driving control signal to the power conversion unit 12;Otherwise allow the drive
Dynamic control unit 31 exports the driving control signal to the power conversion unit 12.
The hair wave control unit 33, if being additionally operable to the determination unit 32 determines the semiconductor devices fail,
Preset drive signal is exported to the power conversion unit 12.For prevent power conversion unit 12 occur secondary failure or
It breaks down and magnifies.
It please refers to shown in Fig. 6, in one embodiment, described device further includes protection module 40;
The protection module 40, if determining the semiconductor devices fail for the Logic control module 30,
The semiconductor devices is protected.
It please refers to shown in Fig. 7, in this embodiment, the protection module 40 includes optical fiber transmission circuit 41 and driving
Processing unit 42;
41 one end of the optical fiber transmission circuit is connect with the Logic control module 30, and the other end and driving processing are single
One end connection of member 42;The other end of the driving processing unit 42 is connect with the power conversion unit 12.
The present embodiment in order to better understand carries out the deterministic process of semiconductor devices failure below in conjunction with Fig. 2 and Fig. 8
Explanation:
As shown in Fig. 2, the power conversion unit 12 is " I " type three-level topology circuit, presets node and become for power
The DC side midpoint N and power conversion side midpoint L in unit 12 are changed, by acquiring the voltage V between the both ends N and LLN, to determine
Whether the semiconductor devices breaks down.
As shown in figure 8, " 0 " in driving control signal represents power switch tube (T1-T4) in power conversion unit 12
Cut-off signals, " 1 " represent the open signal of power switch tube (T1-T4);" 0110 " represents power switch tube T2 and power is opened
It is open-minded to close pipe T3, power switch tube T1 and power switch tube T4 are closed;Similarly, " 1100 " represent T1 and T2 is open-minded, and T3 and T4 are closed
It closes.
In t0Moment, 31 output driving of drive control unit control signal 1100, i.e. driving control signal changes from 0110
It is 1100, power conversion unit 12 actually needs to close T3, opens T1.V at this timeLNVoltage is from 0 level changeLevel.
Proportional difference circuit 22 converts and predetermined voltage threshold U the high voltage of power conversion unit 12 torefMatched ratio
Compared with voltage Ucmp, Ucmp=kcmp*VLN, wherein kcmpFor voltage conversion coefficient.Predetermined voltage threshold UrefIt could be provided as
Comparison voltage UcmpWith predetermined voltage threshold UrefIt is compared, high level signal or low is exported according to comparison result
Level signal.
As shown in figure 8, as the voltage V between the both ends N and L in power conversion unit 12LNIt is equal toWhen, UcmpIt is more than
Uref, the optical signal of light emitting module is luminance in photoelectric isolating circuit 23, and optical fiber will be sent into after optical signal transmission by optical mode
The optical signal received is converted to high level by block by optical module;Voltage between the both ends N and L in power conversion unit 12
VLNWhen equal to 0, UcmpLess than Uref, the optical signal of light emitting module is non-light emitting state in photoelectric isolating circuit 23, unglazed in optical fiber
Signal transmission exports when being detected in optical fiber without optical signal transmission by optical module as low level.
Therefore, when it is high level to receive the output of photoelectric isolating circuit 23 in Logic control module 30, power conversion list
Voltage V in member 12 between the both ends N and LLNIt is equal toRepresent that power switch tube T1 and T2 are open-minded, and electric current flows through T1 and T2;
When it is low level to receive the output of photoelectric isolating circuit 23 in Logic control module 30, N and L two in power conversion unit 12
Voltage V between endLNEqual to 0, represent that power switch tube T2 or T3 be open-minded or T2 and T3 is open-minded simultaneously.
The determination unit 32 of Logic control module 30 is by constantly detecting in power conversion unit 12 between the both ends N and L
Voltage VLN, it is compared in real time with the driving control signal of the output of drive control unit 31, judges whether the two matches, if not
Matching, illustrates occur semiconductor devices failure in power conversion unit 12;If the two matches, illustrate in power conversion unit 12
Semiconductor devices is working properly.
The semiconductor devices fault detect assembling device of the utility model embodiment, passes through voltage processing module and logic control
Module can detect semiconductor devices failure in real time;The detection for solving existing semiconductor devices failure does not have real-time, height
Vulnerability to jamming and the poor problem of isolation.
Second embodiment
The utility model second embodiment provides a kind of converter, and the converter includes partly leading described in first embodiment
Body device fault detection device.Semiconductor devices failure detector can refer to foregoing teachings, and therefore not to repeat here.
The converter of the utility model embodiment can detect half in real time by voltage processing module and Logic control module
Conductor device failure;Solve existing semiconductor devices failure detection do not have real-time, highly resistance immunity and isolation compared with
The problem of difference.
Above by reference to the preferred embodiment for having illustrated the utility model, not thereby limit to the right of the utility model
Range.Those skilled in the art do not depart from the scope of the utility model and essence, can realize this practicality there are many variant scheme
It is novel, it can be used for another embodiment for example as the feature of one embodiment and obtain another embodiment.It is all to use this practicality
All any modification, equivalent and improvement made by within novel technical concept, should all the utility model interest field it
It is interior.
Claims (11)
1. a kind of semiconductor devices failure detector, which is characterized in that described device includes:Main power module, voltage processing
Module and Logic control module;
The main power module includes energy-storage units and power conversion unit, and the power conversion unit includes semiconductor devices;
The voltage processing module, the voltage between default node for acquiring the power conversion unit;It will be described default
Voltage between node is converted to voltage state signal;Low electricity is exported after carrying out Phototube Coupling processing to the voltage state signal
Press signal;
The Logic control module, the low voltage signal for obtaining the voltage processing module output;Become according to the power
The driving control signal and the low voltage signal for changing unit determine whether the semiconductor devices breaks down.
2. a kind of semiconductor devices failure detector according to claim 1, which is characterized in that the voltage handles mould
Block includes high resistance sectional pressure circuit, proportional difference circuit and photoelectric isolating circuit;
The high resistance sectional pressure circuit in parallel in the both ends of the default node of the power conversion unit, the proportional difference circuit with
High resistance sectional pressure circuit connects, and one end of the photoelectric isolating circuit is connect with the proportional difference circuit, and the other end is patrolled with described
Collect control module connection;
The high resistance sectional pressure circuit, the voltage between default node for acquiring the power conversion unit;
The proportional difference circuit, for the voltage between the default node to be converted to voltage state signal;
The photoelectric isolating circuit, for exporting low voltage signal after carrying out Phototube Coupling processing to the voltage state signal.
3. a kind of semiconductor devices failure detector according to claim 2, which is characterized in that the proportional difference electricity
Road includes zener diode.
4. a kind of semiconductor devices failure detector according to claim 3, which is characterized in that the proportional difference electricity
Road further includes the filter circuit being connect with zener diode.
5. a kind of semiconductor devices failure detector according to claim 2, which is characterized in that the Phototube Coupling electricity
Road includes light emitting module, optical fiber and by optical module;The light emitting module is connected by optical module by the optical fiber with described;
The light emitting module, for the voltage state signal to be converted to optical signal;
The optical fiber, the optical signal transmission for converting the light emitting module is to described by optical module;
It is described by optical module, the optical signal for transmitting the optical fiber is converted to the low voltage signal.
6. a kind of semiconductor devices failure detector according to claim 1, which is characterized in that the logic control mould
Block includes drive control unit and determination unit;
The drive control unit, for exporting the driving control signal to the power conversion according to preset control strategy
Unit;
The determination unit, the low voltage signal for obtaining the voltage processing module output and drive control letter
Number;Determine whether the semiconductor devices breaks down according to the driving control signal and the low voltage signal.
7. a kind of semiconductor devices failure detector according to claim 6, which is characterized in that the logic control mould
Block further includes hair wave control unit;
The hair wave control unit is forbidden described if determining the semiconductor devices fail for the determination unit
Drive control unit exports the driving control signal to the power conversion unit;Otherwise allow the drive control unit defeated
Go out the driving control signal to the power conversion unit.
8. a kind of semiconductor devices failure detector according to claim 7, which is characterized in that the hair wave control is single
Member exports preset drive signal to the work(if being additionally operable to the determination unit determines the semiconductor devices fail
Rate converter unit.
9. according to a kind of any semiconductor devices failure detectors of claim 1-8, which is characterized in that described device
It further include protection module;
The protection module, if determining the semiconductor devices fail for the Logic control module, to described half
Conductor device is protected.
10. a kind of semiconductor devices failure detector according to claim 9, which is characterized in that the protection module
Including optical fiber transmission circuit and driving processing unit;
Described optical fiber transmission circuit one end is connect with the Logic control module, one end of the other end and the driving processing unit
Connection;The other end of the driving processing unit is connect with the power conversion unit.
11. a kind of converter, which is characterized in that the converter includes any semiconductor devices events of claim 1-10
Hinder detection device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820325287.9U CN208000357U (en) | 2018-03-09 | 2018-03-09 | Semiconductor devices failure detector and converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820325287.9U CN208000357U (en) | 2018-03-09 | 2018-03-09 | Semiconductor devices failure detector and converter |
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| Publication Number | Publication Date |
|---|---|
| CN208000357U true CN208000357U (en) | 2018-10-23 |
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ID=63838607
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| Application Number | Title | Priority Date | Filing Date |
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| CN201820325287.9U Active CN208000357U (en) | 2018-03-09 | 2018-03-09 | Semiconductor devices failure detector and converter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110261752A (en) * | 2018-03-09 | 2019-09-20 | 深圳市禾望电气股份有限公司 | Semiconductor devices fault detection method and device, converter |
| CN111650489A (en) * | 2019-01-30 | 2020-09-11 | 劳斯莱斯有限公司 | Monitoring operating conditions of transistor-based power converters |
-
2018
- 2018-03-09 CN CN201820325287.9U patent/CN208000357U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110261752A (en) * | 2018-03-09 | 2019-09-20 | 深圳市禾望电气股份有限公司 | Semiconductor devices fault detection method and device, converter |
| CN111650489A (en) * | 2019-01-30 | 2020-09-11 | 劳斯莱斯有限公司 | Monitoring operating conditions of transistor-based power converters |
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