CN110244483A - 阵列基板及液晶显示面板 - Google Patents
阵列基板及液晶显示面板 Download PDFInfo
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract
本申请提供了一种阵列基板及液晶显示面板,该阵列基板包括:基板,所述基板包括显示区域以及透光功能区域;缓冲层,所述缓冲层设置在所述基板上,并覆盖所述显示区域以及透光功能区域;薄膜晶体管阵列层,所述薄膜晶体管阵列层设置在所述缓冲层上,所述薄膜晶体管阵列层上设有开孔,所述开孔与所述透光功能区域相互正对;以及支撑填充结构,所述支撑填充结构设置在所述开孔中。本申请实施例提供的阵列基板及液晶显示面板,通过改变该开孔中的结构,在其中增加一支撑填充结构,从而提高平缓度,避免在该开孔处产生干涉条纹,可以提高显示质量。
Description
技术领域
本申请涉及显示技术领域,具体涉及一种阵列基板及液晶显示面板。
背景技术
随着人们对电子设备的美观性要求越来越高,面内挖孔技术出现在人们的视野中。然而,目前面内挖孔技术仍存在比较多的问题点,例如:盲孔处易在光学测试时出现条状干涉纹。
发明内容
本申请提供一种液晶显示面板,可以解决现有的液晶显示面板极易在盲孔处产生干涉纹的技术问题。
本申请实施例提供一种阵列基板,包括:
基板,所述基板包括显示区域以及透光功能区域;
缓冲层,所述缓冲层设置在所述基板上,并覆盖所述显示区域以及透光功能区域;
薄膜晶体管阵列层,所述薄膜晶体管阵列层设置在所述缓冲层上,所述薄膜晶体管阵列层上设有开孔,所述开孔与所述透光功能区域相互正对;以及
支撑填充结构,所述支撑填充结构设置在所述开孔中。
在本申请所述的阵列基板中,所述薄膜晶体管阵列层包括第一金属层、半导体层、第二金属层、第一绝缘层、第二绝缘层以及第一平坦层;
所述第一绝缘层位于所述缓冲层上,所述第一平坦层设置在所述第一绝缘层上,所述第二绝缘层设置在所述第一平坦层上。
在本申请所述的阵列基板中,所述支撑填充结构包括多个均匀间隔分布于所述开孔中的支撑柱,所述开孔为贯穿至所述缓冲层上表面的通孔。
在本申请所述的阵列基板中,所述支撑柱为在所述薄膜晶体管阵列层上开槽后残留的第一绝缘层、第一平坦层以及第二绝缘层依次堆叠形成。
在本申请所述的阵列基板中,所述支撑柱呈上小下大圆台状。
在本申请所述的阵列基板中,所述开孔包括位于所述第一绝缘层的第一通孔,位于所述第二绝缘层的第二通孔以及位于所述平坦层的第三通孔,所述第三通孔、所述第二通孔、以及所述第一通孔的半径依次减小。
在本申请所述的阵列基板中,所述支撑填充结构为设置在于所述开孔中且位于所述缓冲层的透光功能区域的第二平坦层,且所述第二平坦层的上表面的高度低于所述第一平坦层的上表面的高度。
在本申请所述的阵列基板中,所述第一平坦层与所述第二平坦层相连,且为一次光罩形成。
在本申请所述的阵列基板中,所述第一金属层设置在所述缓冲层上并位于所述显示区域以用于形成栅极金属,所述半导体层设置在所述第一绝缘层上以用于形成沟道层,所述第二金属层设置在所述第一平坦层上以用于形成源漏金属层。
本申请实施例还提供一种液晶显示面板,包括以上所述的阵列基板。
本申请实施例提供的阵列基板及液晶显示面板,通过改变该开孔中的结构,在其中增加一支撑填充结构,从而提高平缓度,避免在该开孔处产生干涉条纹,可以提高显示质量。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的阵列基板的结构示意图。
图2为本申请实施例提供的阵列基板的开孔的结构示意图。
图3为本申请实施例提供阵列基板的另一种结构示意图。
图4为本申请实施例提供阵列基板的开孔的另一结构示意图。
具体实施方式
下面详细描述本申请的实施方式,所述实施方式的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的,仅用于解释本申请,而不能理解为对本申请的限制。
在本申请的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
请参阅图1,图1为本申请实施例提供的阵列基板的结构示意图。在该实施例中,该阵列基板,包括:基板10、缓冲层20、薄膜晶体管阵列层A以及支撑填充结构60。其中,该基板10包括显示区域11以及透光功能区域12;缓冲层20设置于所述基板10上,并覆盖所述显示区域11以及透光功能区域 12。薄膜晶体管阵列层A设置于所述缓冲层20。薄膜晶体管阵列层上开设有开孔100,所述开孔100与所述透光功能区域12相互正对;支撑填充结构60 设置于开孔100中。
其中,在一些实施例中,该透光功能区域12用于供设置于该处下方的摄像头或者感光传感器采集光线。当然,其并不限于此。
具体地,在一些实施例中,该薄膜晶体管阵列层包括第一金属层、半导体层、第二金属层、第一绝缘层30、第二绝缘层50以及第一平坦层40;第一绝缘层30位于缓冲层20上,所述第一平坦层40设置于所述第一绝缘层30上,所述第二绝缘层50设置于所述第一平坦层40上。其中,该第一金属层设置于所述缓冲层20上并位于所述显示区域11以用于形成栅极金属,该半导体层设置于所述第一绝缘层30上以用于形成沟道层,所述第二金属层设置于所述第一平坦层40上以用于形成源漏金属层。第一金属层、半导体层、第二金属层的顺序可以改变,其属于现有技术,无需过多描述。
在本实施例中,该支撑填充结构60包括多个均匀间隔分布于所述开孔100 中的支撑柱61,所述开孔100为贯穿至所述缓冲层20上表面的通孔。
其中,该第一绝缘层30、第二绝缘层50以及第一平坦层40均可以采用氮化硅或者二氧化硅等绝缘材料采用化学气相沉淀工艺形成。
在一些实施例中,该支撑柱61为在所述薄膜晶体管阵列层上开槽后残留的第一绝缘层30、第一平坦层50以及第二绝缘层40依次堆叠形成。也即是说,在采用光刻工艺形成该该开孔100时,每一支撑柱61正对的区域都是对应掩膜板上的遮光区域。该支撑柱61呈上小下大的圆台状。当然,该支撑柱 61还可以为圆柱状,或者圆锥状,当然,其并不限于此。
请同时参照图2,图2为本申请实施例提供的阵列基板的开孔的结构示意图。其中,该开孔100包括位于所述第一绝缘层30的第一通孔31,位于所述第二绝缘层50的第二通孔51以及位于所述平坦层40的第三通孔41,所述第三通孔41、所述第二通孔51、以及所述第一通孔31的半径依次减小。
本申请提供的阵列基板及液晶显示面板,通过改变该开孔中的结构,在其中增加一支撑填充结构(多个支撑柱),从而提高平缓度,避免在该开孔处产生干涉条纹,可以提高显示质量。
请参阅图3,图3为本申请实施例提供阵列基板的另一种结构示意图。在该实施例中,该阵列基板包括:基板10、缓冲层20、薄膜晶体管阵列层A以及支撑填充结构60。其中,该基板10包括显示区域11以及透光功能区域12;缓冲层20设置于所述基板10上,并覆盖所述显示区域11以及透光功能区域 12。薄膜晶体管阵列层A设置于所述缓冲层20。薄膜晶体管阵列层上开设有开孔100,所述开孔100与所述透光功能区域12相互正对;支撑填充结构60设置于开孔100中。
具体地,在一些实施例中,该薄膜晶体管阵列层包括第一金属层、半导体层、第二金属层、第一绝缘层30、第二绝缘层50以及第一平坦层40;第一绝缘层30位于缓冲层20上,所述第一平坦层40设置于所述第一绝缘层30上,所述第二绝缘层50设置于所述第一平坦层40上。其中,该第一金属层设置于所述缓冲层20上并位于所述显示区域11以用于形成栅极金属,所述半导体层设置于所述第一绝缘层上以用于形成沟道层,所述第二金属层设置于所述第一平坦层40上以用于形成源漏金属层。第一金属层、半导体层、第二金属层的顺序可以改变,其属于现有技术,无需过多描述。
在一些实施例中,该支撑填充结构60为设置于所述开孔100中且位于所述缓冲层20的透光功能区域12的第二平坦层,且所述第二平坦层的上表面的高度低于所述第一平坦层40的上表面的高度。第一平坦层40与所述第二平坦层相连,且为一次光罩形成,也即是说,该第一平坦层40与该第二平坦层为一体结构。当然,其并不限于此。
请同时参照图4,图4为本申请实施例提供阵列基板的开孔的另一结构示意图。该开孔100包括位于所述第一绝缘层30的第一通孔31,位于所述第二绝缘层50的第二通孔51以及位于所述平坦层40的第三通孔41,第二通孔51、第一通孔31、第三通孔41的半径依次减小。
本申请提供的阵列基板及液晶显示面板,通过改变该开孔中的结构,在其中增加一支撑填充结构(第二平坦层),从而提高平缓度,避免在该开孔处产生干涉条纹,可以提高显示质量。
本申请还提供了一种液晶显示面板,包括以上所述的阵列基板。
本申请提供的阵列基板及液晶显示面板,通过改变该开孔中的结构,在其中增加一支撑填充结构(例如第二平坦层或者多个支撑柱),从而提高平缓度,避免在该开孔处产生干涉条纹,可以提高显示质量。
在本说明书的描述中,参考术语“一个实施方式”、“某些实施方式”、“示意性实施方式”、“示例”、“具体示例”、或“一些示例”等的描述意指结合所述实施方式或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施方式或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。
虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种阵列基板,其特征在于,包括:
基板,所述基板包括显示区域以及透光功能区域;
缓冲层,所述缓冲层设置在所述基板上,并覆盖所述显示区域以及透光功能区域;
薄膜晶体管阵列层,所述薄膜晶体管阵列层设置在所述缓冲层上,所述薄膜晶体管阵列层上设有开孔,所述开孔与所述透光功能区域相互正对;以及
支撑填充结构,所述支撑填充结构设置在所述开孔中。
2.根据权利要求1所述的阵列基板,其特征在于,所述薄膜晶体管阵列层包括第一金属层、半导体层、第二金属层、第一绝缘层、第二绝缘层以及第一平坦层;
所述第一绝缘层位于所述缓冲层上,所述第一平坦层设置在所述第一绝缘层上,所述第二绝缘层设置在所述第一平坦层上。
3.根据权利要求2所述的阵列基板,其特征在于,所述支撑填充结构包括多个均匀间隔分布于所述开孔中的支撑柱,所述开孔为贯穿至所述缓冲层上表面的通孔。
4.根据权利要求3所述的阵列基板,其特征在于,所述支撑柱为在所述薄膜晶体管阵列层上开槽后残留的第一绝缘层、第一平坦层以及第二绝缘层依次堆叠形成。
5.根据权利要求3所述的阵列基板,其特征在于,所述支撑柱呈上小下大圆台状。
6.根据权利要求3所述的阵列基板,其特征在于,所述开孔包括位于所述第一绝缘层的第一通孔,位于所述第二绝缘层的第二通孔以及位于所述平坦层的第三通孔,所述第三通孔、所述第二通孔、以及所述第一通孔的半径依次减小。
7.根据权利要求2所述的阵列基板,其特征在于,所述支撑填充结构为设置在于所述开孔中且位于所述缓冲层的透光功能区域的第二平坦层,且所述第二平坦层的上表面的高度低于所述第一平坦层的上表面的高度。
8.根据权利要求7所述的阵列基板,其特征在于,所述第一平坦层与所述第二平坦层相连,且为一次光罩形成。
9.根据权利要求2所述的阵列基板,其特征在于,所述第一金属层设置在所述缓冲层上并位于所述显示区域以用于形成栅极金属,所述半导体层设置在所述第一绝缘层上以用于形成沟道层,所述第二金属层设置在所述第一平坦层上以用于形成源漏金属层。
10.一种液晶显示面板,其特征在于,包括权利要求1-9任一项所述的阵列基板。
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