CN110230094A - A kind of polycrystalline ingot furnace heater - Google Patents
A kind of polycrystalline ingot furnace heater Download PDFInfo
- Publication number
- CN110230094A CN110230094A CN201910645556.9A CN201910645556A CN110230094A CN 110230094 A CN110230094 A CN 110230094A CN 201910645556 A CN201910645556 A CN 201910645556A CN 110230094 A CN110230094 A CN 110230094A
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- heater
- driving mechanism
- ingot furnace
- polycrystalline ingot
- lead screw
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- 230000007246 mechanism Effects 0.000 claims abstract description 53
- 239000002210 silicon-based material Substances 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 230000006872 improvement Effects 0.000 abstract description 9
- 238000000465 moulding Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 238000005266 casting Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000009466 transformation Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a kind of polycrystalline ingot furnace heaters, and including the top heater and side heater to heat to silicon material, the top heater and the side heater cooperatively form the space for accommodating crucible and silicon material；It further include the first driving mechanism to drive the top heater movement and the second driving mechanism to drive the side heater movement, the movement of first driving mechanism and second driving mechanism is mutually indepedent.Above-mentioned polycrystalline ingot furnace heater is formed with convenient for control conducive to the quick long brilliant molding dimpling thermal field of silicon ingot, and existing polycrystalline ingot furnace is transformed smaller, has saved improvement cost.
Description
Technical field
The present invention relates to photovoltaic field, in particular to a kind of polycrystalline ingot furnace heater.
Background technique
In photovoltaic industry, ingot casting is a kind of common technology path, heats fusing silicon material by heater and leads to again
Thermal field and technique manufacture temperature gradient are crossed to be oriented solidification to obtaining silicon ingot, wherein heater be divided into top heater and
Side heater, table top heater and side heater concatenation in existing equipment are picking and placing crucible and are launching silicon material
It is also whole control movement when with taking-up finished product, this hardware design impacts to the flexibility of technology controlling and process in ingot casting, makes
The difficulty that must obtain dimpling type thermal field increases, and is unfavorable for silicon ingot quickly long brilliant molding.
In current technology method, dimpling thermal field is manufactured by the way that the method for bottom heater is added.It means that
Need to increase a whole set of independent electric control system, the manufacture of either new table or the transformation of old table all will lead to very big
Expense, bring pressure to the manufacturing cost of enterprise.
Therefore, such as how lower cost is transformed existing polycrystalline ingot furnace, and control forms dimpling thermal field, improves silicon
The long brilliant molding speed of ingot becomes those skilled in the art's technical issues that need to address.
Summary of the invention
The object of the present invention is to provide a kind of polycrystalline ingot furnace heater, which is formed with convenient for control conducive to silicon ingot
Quickly long brilliant molding dimpling thermal field, and it is smaller to the transformation of existing polycrystalline ingot furnace, save improvement cost.
To achieve the above object, the present invention provides a kind of polycrystalline ingot furnace heater, including the top to heat to silicon material
Portion's heater and side heater, the top heater and the side heater cooperatively form the sky of accommodating crucible and silicon material
Between；
It further include the first driving mechanism to drive top heater movement and to drive the side to heat
Second driving mechanism of device movement, the movement of first driving mechanism and second driving mechanism are mutually indepedent.
Optionally, first driving mechanism is to drive the top heater to move up and down along the vertical direction.
Optionally, second driving mechanism is to drive side heater side-to-side movement in the horizontal direction.
Optionally, the top heater is equipped with first electrode, and the first electrode is connected by first electrode connecting rod
External power；
The side heater is equipped with second electrode, and the second electrode connects external power by second electrode connecting rod；
The top heater and the side heater flexible linking.
Optionally, first driving mechanism includes first of the first driving motor and connection first driving motor
Thick stick；First driving motor is fixed on furnace shell vertically, and first lead screw connects the output of first driving motor vertically
Axis and the top heater.
Optionally, second driving mechanism includes second of the second driving motor and connection second driving motor
Thick stick；The second driving motor level is fixed on furnace shell, the output of the second driving motor described in the second lead screw horizontal connection
Axis and the side heater.
Optionally, first lead screw and second lead screw are ball-screw.
Optionally, first lead screw connects the first electrode connecting rod, the second lead screw connection second electricity
Pole connecting rod.
Optionally, first lead screw connects the top heater；It further include to lift the side heater
Plate is lifted, second lead screw connects the lifting plate.
It optionally, further include the movement moved to control first driving mechanism and second driving mechanism respectively
Control device.
Relative to above-mentioned background technique, polycrystalline ingot furnace heater provided by the present invention not only include to silicon material carry out from
And make the top heater and side heater of melting silicon materials；It further include for respectively driving top heater and side heater
The first driving mechanism and the second driving mechanism of movement；Wherein top heater and side heater, which cooperate to be arranged, forms heap
Put the space of crucible and silicon material, in the space that crucible is arranged in top heater and side heater is enclosed, silicon material then distinguishes heap
It is put in multiple crucibles.Silicon material needs to undergo fusing, long brilliant, annealing and cooling Four processes, during long brilliant, by first
The first driving mechanism driving top heater is controlled far from crucible and silicon material, formation crucible centre heating temperature is low, side is heated
The high dimpling type thermal field of temperature, makes the upward dimpling of solid liquid interface in crucible under molten condition, and the silicon material in crucible center is long first
Crystalline substance raises upward, and withdraws side heater outward gradually later to guide Zhou Bianchang brilliant, preferably completes the ingot casting of silicon ingot.
Polycrystalline ingot furnace heater provided by the present invention is driven by increasing the first driving mechanism and the second driving mechanism
Top heater and side heater movement, and the first driving mechanism and the movement of the second driving mechanism are mutually indepedent, so that top
The movement of heater and side heater is mutually indepedent, does not interfere with each other, convenient for gradually moving top heater and side heater
Being formed facilitates the long brilliant dimpling type thermal field of molten silicon material, improves silicon ingot ingot casting efficiency.And above-mentioned polycrystalline ingot furnace heater
Relative to bottom heater and independent electric control system is added, small to the transformation of polycrystalline ingot furnace, improvement cost is low, helps
In reduction production cost.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the schematic diagram of polycrystalline ingot furnace heater provided by the embodiment of the present invention.
Wherein:
1- top heater, 2- side heater, the first driving motor of 3-, the second driving motor of 4-, 5- first electrode connect
Extension bar, 6- second electrode connecting rod, the first lead screw of 7-, the second lead screw of 8-.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In photovoltaic industry, ingot casting is a kind of common technology path, heats fusing silicon material by heater and leads to again
Thermal field and technique manufacture temperature gradient are crossed to be oriented solidification to obtain silicon ingot, wherein heater is divided into top heater 1
With side heater 2, heater body is equipped with crucible, and silicon material is launched in crucible.Silicon material needs to undergo fusing, long brilliant, annealing
With cooling Four processes.So-called dimpling type thermal field refers specifically to the Temperature Distribution in the burner hearth during silicon material grows crystalline substance.When formation earthenware
When heating temperature is low among crucible, side heating temperature is high, the upward dimpling of solid liquid interface in crucible under molten condition, crucible center
Silicon material crystalline substance long first raise upward, withdraw side heater 2 outward gradually later to guide Zhou Bianchang brilliant, be conducive to silicon ingot
Ingot casting long brilliant molding.
In order to make those skilled in the art more fully understand the present invention program, with reference to the accompanying drawing and it is embodied
The present invention is described in further detail for mode.
It please join Fig. 1, Fig. 1 is the schematic diagram of polycrystalline ingot furnace heater provided by the embodiment of the present invention.
Polycrystalline ingot furnace heater provided by the present invention includes for being heated to the silicon material being set in heater
Top heater 1 and side heater 2, top heater 1 and side heater 2 complement each other to form the space for accommodating crucible.
Crucible is used to hold silicon material, and the silicon material in crucible melts under the action of top heater 1 and side heater 2, reduces later
Heating temperature realizes long crystalline substance, then successively experience annealing cooling, completes the ingot casting of silicon ingot.
In addition, polycrystalline ingot furnace heater provided by the present invention further include for drive that top heater 1 moves the
One driving mechanism and for drive side heater 2 move the second driving mechanism；Wherein, the first driving mechanism and the second driving
The movement of mechanism is mutually indepedent；In other words, top heater 1 and side heater 2 can respectively in the first driving mechanism and
Non-interfering independently moving under the drive of second driving mechanism can also control the first driving mechanism and second simultaneously and drive certainly
Motivation structure drives top heater 1 and side heater 2 to move simultaneously respectively.
During silicon ingot ingot casting, the crucible for filling silicon material is placed in burner hearth inner top heater 1 first and side adds
In the space that hot device 2 is enclosed, normal heating thawing is carried out.In crystal growing stage, side heater 2 is adjusted to crucible is mobile and increases side
Portion's heat radiation, top heater 1 moves up increase and reduces top heat radiation at a distance from crucible, in crucible under molten condition
The heat of silicon material scatters upwards in vertical direction first and makes the upward dimpling of solid liquid interface, later gradually by side heater 2
The long brilliant molding that guidance Zhou Bianchang crystalline substance completes silicon ingot is adjusted outward.
And above-mentioned polycrystalline ingot furnace heater is relative to bottom heater and independent electric control system is added, to polycrystalline
The transformation of ingot furnace is small, and improvement cost is low, helps to reduce production cost.
In another preferred embodiment provided by the present invention, the first driving mechanism is only used to drive top heater 1
The up and down motion for carrying out vertical direction, reduces the movement in unnecessary horizontal direction, the first driving mechanism only needs to include vertical
Driving portion simplifies the structure of the first driving mechanism, reduces improvement cost.
The side-to-side movement that second driving mechanism is only used to that side heater 2 is driven to carry out horizontal direction is reduced unnecessary
Movement on vertical direction, the second driving mechanism only need to include horizontal drive portion, simplify the structure of the second driving mechanism,
Equally reduce improvement cost.
Cooperated by the first driving mechanism and the second driving mechanism, individually controls top heater 1 and side heating
Device 2 is at a distance from crucible and silicon material and then control forms dimpling type thermal field, improves the long brilliant shaping efficiency of silicon ingot.
In general, it is concatenation between top heater 1 in the prior art and side heater 2, passes through connecting plate reality
It is now connected and fixed and conductive, but connecting plate obviously will limit top heater 1 and opposite movement occurs for side heater 2.For
Top heater 1 and side heater 2 are conveniently adjusted at a distance from crucible and silicon material, heat top heater 1 and side
Relative motion occurs for device 2, and top heater 1 is no longer fixedly connected with side heater 2, but uses flexible linking, can pass through
The modes such as conducting wire resistant to high temperature realize flexible linking.
Top heater 1 is equipped with first electrode, and first electrode connects external power by first electrode connecting rod 5, and side adds
Hot device 2 is equipped with second electrode, and second electrode connects external power, top heater 1 and side heating by second electrode connecting rod 6
2 flexible linking of device forms complete heating circuit.
Core of the invention is substantially suitable in the heating efficiency of 2 unit area of top heater 1 and side heater
Under the premise of (heated current is identical when concatenation), top heater 1 and side heater 2 and crucible and silicon material are controlled by substep
Distance change temperature gradient or Temperature Distribution.Obvious top heater 1 and side heater 2 can also use independent
Circuit system controls different heated currents to change Temperature Distribution and temperature gradient, but such mode is to polycrystalline ingot furnace
Heater furnace shell, top heater 1, the connection of side heater 2 and top heater 1 and side heater 2 and electrode change
Become larger, improvement cost is higher.
First driving mechanism described in above-described embodiment mainly includes the first driving motor 3 and is connected to the first driving motor
3 the first lead screw 7, the first driving motor 3 can be fixed in furnace shell vertically, and the first lead screw 7 is vertically arranged, and be separately connected the first drive
The output shaft and top heater 1 of dynamic motor 3.It should be noted that the first lead screw 7 can be directly connected to top heater 1,
It can connect first electrode connecting rod 5, drive top heater 1 to move up and down by first electrode connecting rod 5.To guarantee top
Heater 1 can guarantee the conducting of electric current when moving up and down, and first electrode connecting rod 5 can be connected by conducting slip ring and external power
It connects, first electrode connecting rod 5 is arranged in conducting slip ring, is also able to achieve electricity when top heater 1 moves up and down to realize
The conducting of stream.
Second driving mechanism includes the second lead screw of the second driving motor 4 of horizontally disposed second driving motor 4 and connection
8, the second driving motor 4 can fix and furnace shell, output shaft horizontal extension, 8 the second driving motor of horizontal connection 4 of the second lead screw
Output shaft and side heater 2.It should be noted that the second lead screw 8 can be directly connected to side heater 2, can also be passed through
Two electrode connecting rods, 6 connect the side heater 2, to guarantee that side heater 2 can guarantee the conducting of electric current in horizontal movement,
One end of second electrode connecting rod 6 and side heater 2 are hinged, and the other end is connect by conducting slip ring with external power.In addition, the
Two lead screws 8 can also be connect by lifting plate with side heater 2, and lifting plate and side heater 2 and the second lead screw 8 keep cutting with scissors
It connects.First lead screw 7 and the second lead screw 8 are all made of ball-screw.
To optimize above-described embodiment, polycrystalline ingot furnace heater provided by the present invention further includes the first driving of control respectively
The motion control device of mechanism and the movement of the second driving mechanism, motion control device can use PLC or single-chip microcontroller, can also adopt
It being configured with computer or with reference to the prior art, motion control mechanism cooperates the temperature testing organization in existing burner hearth,
Silicon material controls the first driving mechanism respectively and drives top heater 1, the second driving mechanism that side is driven to add when being in crystal growing stage
Hot device 2 is moved according to predetermined movement path.
So-called predetermined movement path refers to that top heater 1 moves upwards certain distance first, increases and crucible and silicon material
Distance, while side heater 2 is moved to close to the direction of crucible and silicon material, is reduced and crucible and silicon material distance, formation crucible
The dimpling type thermal field that medium temperature is low, ambient temperature is high；When it is long brilliant to a certain degree when, side heater 2 to far from crucible and
The direction of silicon material moves, convenient for the long brilliant molding of silicon material at crucible edge.
It should be noted that in the present specification, such as first and second etc relational terms are used merely to one
Entity is distinguished with other several entities, and without necessarily requiring or implying between these entities, there are any this actual
Relationship or sequence.
Polycrystalline ingot furnace heater provided by the present invention is described in detail above.It is used herein specifically a
Principle and implementation of the present invention are described for example, and it is of the invention that the above embodiments are only used to help understand
Method and its core concept.It should be pointed out that for those skilled in the art, not departing from the principle of the invention
Under the premise of, it can be with several improvements and modifications are made to the present invention, these improvement and modification also fall into the claims in the present invention
Protection scope in.
Claims (10)
1. a kind of polycrystalline ingot furnace heater, which is characterized in that including to be heated to silicon material top heater (1) and side
Heater (2), the top heater (1) and the side heater (2) cooperatively form the space of accommodating crucible and silicon material；
Further include to drive the top heater (1) move the first driving mechanism and to drive the side heater
(2) the second driving mechanism moved, the movement of first driving mechanism and second driving mechanism are mutually indepedent.
2. polycrystalline ingot furnace heater according to claim 1, which is characterized in that first driving mechanism is to drive
The top heater (1) moves up and down along the vertical direction.
3. polycrystalline ingot furnace heater according to claim 2, which is characterized in that second driving mechanism is to drive
Side heater (2) side-to-side movement in the horizontal direction.
4. polycrystalline ingot furnace heater according to claim 3, which is characterized in that the top heater (1) is equipped with the
One electrode, the first electrode connect external power by first electrode connecting rod (5)；
The side heater (2) is equipped with second electrode, and the second electrode connects dispatch from foreign news agency by second electrode connecting rod (6)
Source；
The top heater (1) and the side heater (2) flexible linking.
5. polycrystalline ingot furnace heater according to claim 4, which is characterized in that first driving mechanism includes first
The first lead screw (7) of driving motor (3) and connection first driving motor (3)；First driving motor (3) is fixed vertically
In furnace shell, first lead screw (7) connects the output shaft and the top heater (1) of first driving motor (3) vertically.
6. polycrystalline ingot furnace heater according to claim 5, which is characterized in that second driving mechanism includes second
The second lead screw (8) of driving motor (4) and connection second driving motor (4)；Second driving motor (4) is horizontal fixed
In furnace shell, the output shaft and the side heater (2) of the second driving motor (4) described in the second lead screw (8) horizontal connection.
7. polycrystalline ingot furnace heater according to claim 6, which is characterized in that first lead screw (7) and described
Two lead screws (8) are ball-screw.
8. polycrystalline ingot furnace heater according to claim 7, which is characterized in that described in the first lead screw (7) connection
First electrode connecting rod (5), second lead screw (8) connect the second electrode connecting rod (6).
9. polycrystalline ingot furnace heater according to claim 7, which is characterized in that described in the first lead screw (7) connection
Top heater (1)；
It further include the lifting plate to lift the side heater (2), second lead screw (8) connects the lifting plate.
10. polycrystalline ingot furnace heater according to any one of claims 1 to 9, which is characterized in that further include to respectively
Control the motion control device of first driving mechanism and second driving mechanism movement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910645556.9A CN110230094A (en) | 2019-07-17 | 2019-07-17 | A kind of polycrystalline ingot furnace heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910645556.9A CN110230094A (en) | 2019-07-17 | 2019-07-17 | A kind of polycrystalline ingot furnace heater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110230094A true CN110230094A (en) | 2019-09-13 |
Family
ID=67855129
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910645556.9A Pending CN110230094A (en) | 2019-07-17 | 2019-07-17 | A kind of polycrystalline ingot furnace heater |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140673A (en) * | 2011-03-23 | 2011-08-03 | 上虞晶信机电科技有限公司 | Polycrystalline silicon ingot furnace heating device with separately controlled top and side |
| CN104372401A (en) * | 2013-08-12 | 2015-02-25 | 晶科能源有限公司 | Ingot furnace and side heater component of ingot furnace |
| KR101615340B1 (en) * | 2015-01-12 | 2016-04-25 | 원광대학교산학협력단 | Method and apparatus for producing n-type polycrystalline silicon ingot |
| CN205774922U (en) * | 2016-05-25 | 2016-12-07 | 晶科能源有限公司 | A kind of polycrystalline silicon ingot or purifying furnace heater |
| CN207811929U (en) * | 2017-12-21 | 2018-09-04 | 晶科能源有限公司 | A kind of side heater assembly and its lifting panel assembly applied to polycrystalline cast ingot |
| CN108588825A (en) * | 2018-07-06 | 2018-09-28 | 浙江精功科技股份有限公司 | A kind of moveable ingot furnace of side heater and its casting ingot process |
| CN109537050A (en) * | 2018-12-24 | 2019-03-29 | 晶科能源有限公司 | A kind of ingot furnace |
| CN210458426U (en) * | 2019-07-17 | 2020-05-05 | 晶科能源有限公司 | Polycrystal ingot furnace heater |
-
2019
- 2019-07-17 CN CN201910645556.9A patent/CN110230094A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140673A (en) * | 2011-03-23 | 2011-08-03 | 上虞晶信机电科技有限公司 | Polycrystalline silicon ingot furnace heating device with separately controlled top and side |
| CN104372401A (en) * | 2013-08-12 | 2015-02-25 | 晶科能源有限公司 | Ingot furnace and side heater component of ingot furnace |
| KR101615340B1 (en) * | 2015-01-12 | 2016-04-25 | 원광대학교산학협력단 | Method and apparatus for producing n-type polycrystalline silicon ingot |
| CN205774922U (en) * | 2016-05-25 | 2016-12-07 | 晶科能源有限公司 | A kind of polycrystalline silicon ingot or purifying furnace heater |
| CN207811929U (en) * | 2017-12-21 | 2018-09-04 | 晶科能源有限公司 | A kind of side heater assembly and its lifting panel assembly applied to polycrystalline cast ingot |
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| CN109537050A (en) * | 2018-12-24 | 2019-03-29 | 晶科能源有限公司 | A kind of ingot furnace |
| CN210458426U (en) * | 2019-07-17 | 2020-05-05 | 晶科能源有限公司 | Polycrystal ingot furnace heater |
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Address after: No. 1 Yingbin Avenue, Shangrao Economic and Technological Development Zone, Shangrao City, Jiangxi Province, 334000 Applicant after: Jinko Solar Co., Ltd. Applicant after: ZHEJIANG JINKO SOLAR Co.,Ltd. Address before: 334100, No. 1, crystal Road, Shangrao Economic Development Zone, Jiangxi, China Applicant before: JINKO SOLAR Co.,Ltd. Applicant before: ZHEJIANG JINKO SOLAR Co.,Ltd. |
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Application publication date: 20190913 |