CN110230031A - A kind of passive high-temperature flexible vibrating sensor of broadband and its preparation process - Google Patents

A kind of passive high-temperature flexible vibrating sensor of broadband and its preparation process Download PDF

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CN110230031A
CN110230031A CN201910571554.XA CN201910571554A CN110230031A CN 110230031 A CN110230031 A CN 110230031A CN 201910571554 A CN201910571554 A CN 201910571554A CN 110230031 A CN110230031 A CN 110230031A
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layer
capacitor
sputtering
crown
substrate
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CN110230031B (en
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李晨
熊继军
贾蔓谷
薛亚楠
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North University of China
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North University of China
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
    • G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means

Abstract

The invention discloses a kind of passive high-temperature flexible vibrating sensor of broadband, it is high temperature resistant Al respectively that the sensor is divided into five layers from top to bottom2O3Thin-film encapsulation layer, capacitor top crown and rectangular-shaped inductor coils layer, Al2O3Thin film dielectric layer, the bottom crown layer of capacitor and the polyimide layer as substrate.Capacitor bottom crown is deposited on the polyimide substrate, deposition of aluminium oxide dielectric layer on the capacitor bottom crown, capacitor top crown and inductance coil are deposited on the alumina medium layer, and capacitor top crown is located at the center of inductance coil, alumina packaging layer is deposited on capacitor top crown and inductance coil, the alumina medium layer is equipped with the through-hole being electrically connected for realizing capacitor bottom crown and inductance coil.The present invention select polyimide flex material make substrate, abnormity component surface can be adhered completely to, Large-Scale Equipment work in be not easy it is vibrated fall off, the dynamic that can be realized abnormity component surface vibration parameter accurately measures.

Description

A kind of passive high-temperature flexible vibrating sensor of broadband and its preparation process
Technical field
The present invention relates to oscillation sensor fields, and in particular to a kind of passive high-temperature flexible vibrating sensor of broadband and Its preparation process.
Background technique
With the continuous development of China's science and technology, in Large-Scale Equipment manufacture and operational process, to extreme environment (- 50 DEG C~300 DEG C) special profiled member complex surface vibration parameters implement the requirement of dynamic monitoring ability and increasingly improve, at For the key technology " bottleneck " of its performance boost.Since traditional vibrating sensor is using non-flexible substrate as substrate, can not with it is different Component surface fits closely, and is easy to fall off in the operating condition, and wired test method has contact in extreme circumstances and connects Touch the problems such as bad, test result is distorted.Therefore, it needs to invent a kind of completely new passive high-temperature flexible vibrating sensing of broadband Device is accurately measured with the dynamic for realizing extreme environment complex component surface vibration parameter.
Summary of the invention
The present invention provides a kind of passive high-temperature flexible vibrating sensors of broadband, to realize to extreme environment (- 50 DEG C~300 DEG C) special profiled member complex surface vibration parameters accurately measure.
To achieve the above object, the technical scheme adopted by the invention is as follows:
A kind of passive high-temperature flexible vibrating sensor of broadband, the sensor are divided into five layers from top to bottom, respectively It is high temperature resistant Al2O3Thin-film encapsulation layer, capacitor top crown and rectangular-shaped inductor coils layer, Al2O3The lower pole of thin film dielectric layer, capacitor Plate layer and polyimide layer as substrate；Capacitor bottom crown, the capacitor bottom crown are deposited on the polyimide substrate Upper deposition of aluminium oxide dielectric layer is deposited with capacitor top crown and inductance coil, and capacitor top crown on the alumina medium layer At the center of inductance coil, alumina packaging layer, the alumina medium are deposited on capacitor top crown and inductance coil Layer is equipped with the through-hole being electrically connected for realizing capacitor bottom crown and inductance coil.
Further, the shape of the inductance coil is rectangular coil shape.
Further, thickness≤200 μm of the passive high-temperature flexible vibrating sensor of broadband.
Further, on capacitor bottom crown and the thickness of rectangular-shaped inductor coils≤10um, preparing material is high temperature resistant Metallic silver.
Further, thickness≤100um of the polyimide substrate.
Further, the thickness of the alumina medium layer and alumina packaging layer≤50um.
The present invention also provides a kind of above-mentioned preparation processes of the passive high-temperature flexible vibrating sensor of broadband, including such as Lower step:
S1, flexible substrates pretreatment
Polyimide substrate is successively cleaned by ultrasonic in acetone, ethyl alcohol and deionized water, and to poly- after cleaning Imide bottom carries out drying and processing；
The preparation of S2, capacitor bottom crown
The main process of capacitor bottom crown preparation is clean polyimide-based bottom surface will be electric through gluing, exposure, development It holds pole plate graphical display to go out, prepares capacitor bottom crown film, specific preparation process using dc sputtering processes are as follows:
A. it is coated with one layer of uniform photoresist in clean polyimide-based bottom surface using glue spreader, and at 100 DEG C Drying in drying oven；
B., the capacitor bottom crown graphic mask version prepared is placed in the substrate surface for being coated with photoresist one side, utilizes exposure Lamp exposes 3~5s, makes the pattern transfer of mask to substrate surface；
C. processing is dried after carrying out to the substrate after exposure to eliminate the standing wave effect of photoresist layer side wall；
D. will after the completion of dry that treated substrate be placed in developer solution and impregnate 5~10s, show that substrate surface figure completely Out；
E. graphical substrate and Ag target to be sputtered are sequentially placed into the indoor sample rotates platform of sputtering and target source installation place, Start shielding power supply and sample rotates platform, is lower than 2*10 in sputtering chamber vacuum degree-4Pa, sputtering power 266.8W, sputtering chamber work Make to carry out sputtering processing under conditions of air pressure is 3Pa, Ag target passes through Ar+Ag particle is pounded, polyimide surface is deposited on Metallic silver layer is formed, when the thickness of metallic silver layer reaches 10um, power supply is closed, stops sputtering；
F. the polyimide substrate that sputtering is completed using acetone cleaning, removes the photoresist of remaining substrate, while utilizing and going Ionized water cleans remaining acetone soln, and after aerial standing and drying, the preparation of capacitor bottom crown is completed；
The preparation of S3, alumina medium layer
In order to avoid capacitor top crown is directly contacted with bottom crown, after the completion of the preparation of capacitor bottom crown, then its surface system The alumina medium layer of standby one layer of insulation, preparation flow are the O using Al as target2For reaction gas, using radio-frequency sputtering technique system It is standby to complete, specific process are as follows:
A. in clean capacitor bottom crown film surface, it is only left at photoresist using techniques such as gluing, exposure, developments logical At hole, to prevent the Al of insulation2O3It is filled with and makes electric insulation between capacitor bottom crown and inductance coil；
It b. is 3*10 in vacuum degree-3Pa, operating air pressure be 0.5Pa sputtering chamber in, using Al as target, O2For reaction gas Body, on capacitor bottom crown surface using the preparation of radio-frequency sputtering technique with a thickness of the Al of 50um2O3Thin film dielectric layer；
c.Al2O3After the completion of thin film dielectric layer sputtering, substrate surface is successively cleaned using acetone, deionized water, removal is remaining Photoresist and remaining acetone soln, after dry, Al2O3Thin film dielectric layer preparation finishes；
The preparation of S4, capacitor top crown and inductance coil film
Capacitor top crown is consistent with the preparation process of capacitor bottom crown with the preparation process of inductance coil film, that is, is aoxidizing Aluminium dielectric layer surface, using Ag as sputtering target material, Ar is sputter gas, and the metal Ag for preparing 10um thickness using dc sputtering processes is thin Film, and complete the filling of metal Ag in through-hole realizes being electrically connected for capacitor bottom crown and inductance coil outer end, and to sputtering after Film surface is cleaned, the extra photoresist of removal film surface and residual organic solution, after cleaning, capacitor top crown and electricity Feel coil film preparation to complete；
The preparation of S5, alumina packaging layer
In order to avoid capacitor, the inductance of sensor are directly contacted with working environment, one is prepared in the upper space of sensor Layer aluminum oxide film resistant to high temperature makees encapsulated layer, and specific preparation process is conductive in capacitor top crown and LC with alumina medium layer Connect layer surface, using Al as target, O2For reaction gas, the Al with a thickness of 50um is prepared using radio-frequency sputtering technique2O3Film is situated between Matter layer, and the thin film dielectrics layer surface after sputtering is cleaned, remove the photoresist and residual of thin film dielectric layer excess surface Organic solution, after cleaning, the preparation of alumina packaging layer is completed.
The invention has the following advantages:
For application limitation of the conventional vibration sensor in Large-Scale Equipment, the present invention selects polyimide flex material to make Substrate can adhere completely to abnormity component surface, Large-Scale Equipment work in be not easy it is vibrated fall off, can be realized abnormity component The dynamic of surface vibration parameter accurately measures.
Refractory metal Ag is selected to make conductive material, refractory ceramics Al2O3Make medium and encapsulating material, can make to sense Device works to normal table under high temperature environment.
The lead that wirelessly non-contactly measuring principle avoids conventional high-temperature vibrating sensor uses, and keeps sensor more applicable In particular surroundings, the application range of sensor has been widened.
In particular circumstances, passive high temperature resistant vibrating sensor of the invention can precisely realize wide band vibration parameters Measurement.
Detailed description of the invention
Fig. 1 is a kind of preparation technology flow chart of the passive high-temperature flexible vibrating sensor of broadband of the embodiment of the present invention.
Fig. 2 is a kind of sectional view of the passive high-temperature flexible vibrating sensor of broadband of the embodiment of the present invention.
Fig. 3 is a kind of passive high-temperature flexible vibrating sensor working principle diagram of broadband of the embodiment of the present invention.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention Protection scope.
As shown in Figure 1, the embodiment of the invention provides a kind of passive high-temperature flexible vibrating sensor of broadband, it is described Sensor is divided into five layers from top to bottom, is high temperature resistant Al respectively2O3Thin-film encapsulation layer, capacitor top crown and rectangular-shaped inductor coils layer, Al2O3Thin film dielectric layer, the bottom crown layer of capacitor and the polyimide layer as substrate.It is deposited on the polyimide substrate 1 Capacitor bottom crown 2, deposition of aluminium oxide dielectric layer 3 on the capacitor bottom crown 2 are deposited with capacitor on the alumina medium layer 3 Top crown 5 and inductance coil 4, and capacitor top crown is located at the center of inductance coil, on capacitor top crown 5 and inductance coil 4 It is deposited with alumina packaging layer 6；The alumina medium layer is equipped with to be electrically connected for realizing capacitor bottom crown and inductance coil Through-hole 7.Wherein, the material for preparing of capacitor plate and inductance coil is refractory metal Ag, alumina medium layer film be for Make not to be electrically connected between bottom crown on capacitor, alumina packaging layer film is to protect inductance capacitance.
As shown in Fig. 2, the flexible polyimide substrate with a thickness of 100um, alumina medium layer and alumina packaging The thickness of layer is 50um, and the shape of the inductance coil is rectangular coil shape, bottom crown in rectangular-shaped inductor coils and capacitor Thickness is 10um, and preparing material is refractory metal silver；The passive high-temperature flexible vibrating sensor of broadband of the present invention Test schematic is as shown in figure 3, the vibrating sensor that preparation is completed is attached to Large-Scale Equipment abnormity component surface, when its work When, Large-Scale Equipment internal gas flow causes irregular part that microvibration occurs, and makes between Large-Scale Equipment abnormity component and reading antenna Distance changes, and causes the equivalent inductance L of sensor to change, and then make the resonance frequency of sensorOccur Variation, by the non-contact coupled transfer between reading antenna to the back end processing module being placed under low temperature environment, by pushing away It leads, solve data in back end processing module, irregular part surface vibration parameter (displacement d, speed v and acceleration a) can be realized Accurately measure.
The embodiment of the invention also provides a kind of above-mentioned preparation process of the passive high-temperature flexible vibrating sensor of broadband, Include the following steps:
S1, flexible substrates pretreatment
Polyimide substrate is successively cleaned by ultrasonic in acetone, ethyl alcohol and deionized water, and to poly- after cleaning Imide bottom carries out drying and processing；
The preparation of S2, capacitor bottom crown
The main process of capacitor bottom crown preparation is clean polyimide-based bottom surface will be electric through gluing, exposure, development It holds pole plate graphical display to go out, prepares capacitor bottom crown film, specific preparation process using dc sputtering processes are as follows:
A. it is coated with one layer of uniform photoresist in clean polyimide-based bottom surface using glue spreader, and at 100 DEG C Drying in drying oven；
B., the capacitor bottom crown graphic mask version prepared is placed in the substrate surface for being coated with photoresist one side, utilizes exposure Lamp exposes 3~5s, makes the pattern transfer of mask to substrate surface；
C. processing is dried after carrying out to the substrate after exposure to eliminate the standing wave effect of photoresist layer side wall；
D. will after the completion of dry that treated substrate be placed in developer solution and impregnate 5~10s, show that substrate surface figure completely Out；
E. graphical substrate and Ag target to be sputtered are put into the indoor sample rotates platform of sputtering and target source installation place, starting Shielding power supply and sample rotates platform are lower than 2*10 in sputtering chamber vacuum degree-4Pa, sputtering power 266.8W, sputtering chamber work gas Pressure carries out sputtering processing under conditions of being 3Pa, and Ag target passes through Ar+Ag particle is pounded, polyimide surface is deposited on and is formed Metallic silver layer closes power supply when the thickness of metallic silver layer reaches 10um, stops sputtering；
F. the polyimide substrate after sputtering is completed using acetone cleaning, removes the photoresist of remaining substrate, utilizes simultaneously Deionized water cleans remaining acetone soln, aerial standing and drying, and the preparation of capacitor bottom crown is completed；
The preparation of S3, alumina medium layer
In order to avoid capacitor top crown is directly contacted with bottom crown, after the completion of the preparation of capacitor bottom crown, then its surface system The alumina medium layer of standby one layer of insulation, preparation flow are the O using Al as target2For reaction gas, using radio-frequency sputtering technique system It is standby to complete, specific process are as follows:
A. in clean capacitor bottom crown film surface, it is only left at photoresist using techniques such as gluing, exposure, developments logical At hole, to prevent the Al of insulation2O3It is filled with and makes electric insulation between capacitor bottom crown and inductance coil；
It b. is 3*10 in vacuum degree-3Pa, operating air pressure be 0.5Pa sputtering chamber in, using Al as target, O2For reaction gas Body, on capacitor bottom crown surface using the preparation of radio-frequency sputtering technique with a thickness of the Al of 50um2O3Thin film dielectric layer；
c.Al2O3After the completion of thin film dielectric layer sputtering, substrate surface is successively cleaned using acetone, deionized water, removes through-hole The photoresist at place and remaining acetone soln, after dry, Al2O3Thin film dielectric layer preparation finishes；
The preparation of S4, capacitor top crown and inductance coil film
Capacitor top crown is consistent with the preparation process of capacitor bottom crown with the preparation process of inductance coil film, that is, is aoxidizing Aluminium dielectric layer surface, using Ag as sputtering target material, Ar is sputter gas, and the metal Ag for preparing 10um thickness using dc sputtering processes is thin Film, and complete the filling of metal Ag in through-hole realizes being electrically connected for capacitor bottom crown and inductance coil outer end, and to sputtering after Film surface is cleaned, the extra photoresist of removal film surface and residual organic solution, after cleaning, capacitor top crown and electricity Feel coil film preparation to complete；
The preparation of S5, alumina packaging layer
In order to avoid capacitor, the inductance of sensor are directly contacted with working environment, one is prepared in the upper space of sensor Layer aluminum oxide film resistant to high temperature makees encapsulated layer.Specific preparation process is conductive in capacitor top crown and LC with alumina medium layer Connect layer surface, using Al as target, O2For reaction gas, the Al with a thickness of 50um is prepared using radio-frequency sputtering technique2O3Film is situated between Matter layer, and the thin film dielectrics layer surface after sputtering is cleaned, remove the photoresist and residual of thin film dielectric layer excess surface Organic solution, after cleaning, the preparation of alumina packaging layer is completed.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned Particular implementation, those skilled in the art can make a variety of changes or modify within the scope of the claims, this not shadow Ring substantive content of the invention.In the absence of conflict, the feature in embodiments herein and embodiment can any phase Mutually combination.

Claims (7)

1. a kind of passive high-temperature flexible vibrating sensor of broadband, which is characterized in that the sensor is divided into from top to bottom Five layers, be high temperature resistant Al respectively2O3Thin-film encapsulation layer, capacitor top crown and inductor wire ring layer, Al2O3Thin film dielectric layer, capacitor Bottom crown layer and polyimide layer as substrate, are deposited with capacitor bottom crown on the polyimide substrate, under the capacitor Deposition of aluminium oxide dielectric layer on pole plate is deposited with capacitor top crown and inductance coil on the alumina medium layer, and on capacitor Pole plate is located at the center of inductance coil, and alumina packaging layer, the aluminium oxide are deposited on capacitor top crown and inductance coil Dielectric layer is equipped with the through-hole being electrically connected for realizing capacitor bottom crown and inductance coil.
2. a kind of passive high-temperature flexible vibrating sensor of broadband as described in claim 1, which is characterized in that the inductance The shape of coil is rectangular coil shape.
3. a kind of passive high-temperature flexible vibrating sensor of broadband as described in claim 1, which is characterized in that broadband without Thickness≤200um of source high-temperature flexible vibrating sensor.
4. a kind of passive high-temperature flexible vibrating sensor of broadband as described in claim 1, which is characterized in that above and below capacitor Pole plate and the thickness of rectangular-shaped inductor coils≤10um, preparing material is refractory metal silver.
5. a kind of passive high-temperature flexible vibrating sensor of broadband as described in claim 1, which is characterized in that the polyamides Thickness≤the 100um at imido grpup bottom.
6. a kind of passive high-temperature flexible vibrating sensor of broadband as described in claim 1, which is characterized in that the oxidation The thickness of aluminium dielectric layer and alumina packaging layer≤50um.
7. a kind of preparation process of the passive high-temperature flexible vibrating sensor of broadband as claimed in any one of claims 1 to 6, It is characterized by comprising the following steps:
S1, flexible substrates pretreatment
Polyimide substrate is successively cleaned by ultrasonic in acetone, ethyl alcohol and deionized water, and sub- to the polyamides after cleaning Amido bottom carries out drying and processing；
The preparation of S2, capacitor bottom crown
A. it is coated with one layer of uniform photoresist in clean polyimide-based bottom surface using glue spreader, and in 100 DEG C of drying Drying in furnace；
B., the capacitor bottom crown graphic mask version prepared is placed in the substrate surface for being coated with photoresist one side, is exposed using Exposing Lamp 3~5s of light makes the pattern transfer of mask to substrate surface；
C. processing is dried after carrying out to the substrate after exposure to eliminate the standing wave effect of photoresist layer side wall；
D. the substrate for drying processing after the completion is placed in 5~10s of immersion in developer solution, shows substrate surface figure completely；
E. graphical substrate and Ag target to be sputtered are put into the indoor sample rotates platform of sputtering and target source installation place, starting sputtering Power supply and sample rotates platform are lower than 2*10 in sputtering chamber vacuum degree-4Pa, sputtering power 266.8W, sputtering chamber operating air pressure are Sputtering processing is carried out under conditions of 3Pa, Ag target passes through Ar+Ag particle is pounded, polyimide surface is deposited on and forms metal Silver layer closes power supply when the thickness of metallic silver layer reaches 10um, stops sputtering；
F. the polyimide substrate that sputtering is completed using acetone cleaning, removes the photoresist of remaining substrate, while utilizing deionization Water cleans remaining acetone soln, and after standing and drying, the preparation of capacitor bottom crown is completed；
The preparation of S3, alumina medium layer
A. in clean capacitor bottom crown film surface, photoresist is made to be only left at through-hole using techniques such as gluing, exposure, developments Place, to prevent the Al of insulation2O3It is filled with and makes electric insulation between capacitor bottom crown and inductance coil；
It b. is 3*10 in vacuum degree-3Pa, operating air pressure be 0.5Pa sputtering chamber in, using Al as target, O2For reaction gas, The Al that capacitor bottom crown surface is prepared using radio-frequency sputtering technique with a thickness of 50um2O3Thin film dielectric layer；
c.Al2O3After the completion of thin film dielectric layer sputtering, substrate surface is successively cleaned using acetone, deionized water, removes through hole Photoresist and remaining acetone soln, after dry, the preparation of alumina medium layer is finished；
The preparation of S4, capacitor top crown and inductance coil film
Capacitor top crown is consistent with the preparation process of capacitor bottom crown with the preparation process of inductance coil film, i.e., is situated between in aluminium oxide Matter layer surface, using Ag as sputtering target material, Ar is sputter gas, and the metal Ag film of 10um thickness is prepared using dc sputtering processes, And the filling of metal Ag in through-hole is completed, realization capacitor bottom crown is electrically connected with inductance coil outer end, and to thin after sputtering Film surface is cleaned, the extra photoresist of removal film surface and residual organic solution, after cleaning, capacitor top crown and inductance Coil film preparation is completed；
The preparation of S5, alumina packaging layer
Specific preparation process is conductively connected layer surface, using Al as target, O in capacitor top crown and LC with alumina medium layer2 For reaction gas, the Al with a thickness of 50um is prepared using radio-frequency sputtering technique2O3Thin film dielectric layer, and be situated between to the film after sputtering Matter layer surface is cleaned, and the photoresist and residual organic solution of thin film dielectric layer excess surface, after cleaning, aluminium oxide envelope are removed Layer preparation is filled to complete.
CN201910571554.XA 2019-06-28 2019-06-28 Broadband passive high-temperature-resistant flexible vibration sensor and preparation process thereof Active CN110230031B (en)

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