CN207717276U - A kind of jam sensor based on ion beam sputtering film - Google Patents
A kind of jam sensor based on ion beam sputtering film Download PDFInfo
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- CN207717276U CN207717276U CN201820133621.0U CN201820133621U CN207717276U CN 207717276 U CN207717276 U CN 207717276U CN 201820133621 U CN201820133621 U CN 201820133621U CN 207717276 U CN207717276 U CN 207717276U
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Abstract
The utility model is related to a kind of jam sensors based on ion beam sputtering film, the substrate made by polyimide foam insulation including one, substrate surface is provided with one layer of transition film layer made by Ti thin-film materials, being made in the intermediate region of transition film layer upper surface has the strain ga(u)ge conductive film layer made by Cu thin-film materials, and one layer is equipped on strain ga(u)ge conductive film layer by Si3N4The protection film layer that thin-film material makes, one piece of electrode diaphragm being connected to strain ga(u)ge conductive film layer both ends extraction electrode is respectively provided in the both sides of protection film layer upper surface.The utility model can make the sensitivity of jam sensor, small, measurement accuracy of resolution ratio, measurement range etc. be improved reliable, stably measured, it can be achieved that jam opening signal, meet aerospace craft engine control system signal testing needs.
Description
Technical field
The utility model belongs to sensor surveying unit technical field, is related to a kind of jam based on ion beam sputtering film
Sensor.
Background technology
Sputtered film sensor technology is that the techniques such as thin film sputtering, photoetching in semiconductor technology are applied to sensor system
A kind of novel sensor technology made industry and generated.Compared with traditional sensors, sputtered film sensor has stability
It is good, reliability is high, using wide temperature region, temperature performance is good, corrosion resistance is high the advantages that, be suitble in various severe and specific conditions
Under signal measurement.In recent years, reaching its maturity with film process technology, the sensors such as diaphragm pressure tentatively realize batch
Metaplasia is produced, and product is just gradually applied to the fields such as aerospace, Coal Mechanical, petrochemical industry, has embodied its technical advantage.
With the fast development of China's aerospace craft technology, both ends are connected on the jet pipe and jam of engine
The jam sensor more stringent requirements are proposed (work of jam sensor that jam opening signal detection is carried out for control system
It is as principle：After engine ignition, internal pressure of combustion chamber is increased rapidly to certain value, and the jam of sensor is opened, is broken
Sensor, to provide opening signal to control system).Currently, jam sensor commonly used in the art is using glue
Strain gauge sensitive layer is adhered directly onto the structure in substrate by stick, but the sensor made of this technique is in practical application
In accordingly exist by sensitive low, resolution ratio and measurement range is small, measurement accuracy is low deficiency, can not achieve the survey of small strain
Amount.
Utility model content
The purpose of this utility model is that being solved to problems of the prior art, passed in existing adhesive type jam
On sensor architecture basics, a kind of jam sensor based on ion beam sputtering film is provided, to make thin film sensor realization pair
Reliable, the stably measured of jam opening signal meet aerospace craft engine control system signal testing needs.
It is as described below for realizing the technical solution of the utility model aim.
A kind of jam sensor based on ion beam sputtering film, including a base made by polyimide foam insulation
Bottom is provided with one layer of transition film layer made by Ti thin-film materials, the intermediate region in transition film layer upper surface in substrate surface
Making have the strain ga(u)ge conductive film layer made by Cu thin-film materials, on strain ga(u)ge conductive film layer be equipped with one layer by
Si3N4The protection film layer that thin-film material makes, one piece and strain ga(u)ge conductive film are respectively provided in the both sides of protection film layer upper surface
The electrode diaphragm of layer both ends extraction electrode connection, the electrode diaphragm are made by Au thin-film materials.
In the above-mentioned jam sensor based on ion beam sputtering film, the thickness of transition film layer is 200nm, strain ga(u)ge
The thickness of conductive film layer is 600nm, and the thickness of protection film layer is 200nm, and the thickness of electrode diaphragm is 200nm.
The utility model product use specific preparation method be：Transition film layer uses ion beam sputtering depositing operation system
Standby, conductive film layer is prepared using Assisted by Ion Beam sputtering method, and conductive strain piece is made using photoetching process on resistive layer,
Protection film layer is prepared using Reactive ion-sputtering method, is splashed using ion beam on the electrode at conductive strain plate electrode film layer both ends
Penetrate making.
Compared with prior art, the utility model has following technological merit：
One, the jam sensor described in the utility model based on ion beam sputtering film, transition film layer are in polyamides Asia
The important film layer that connection transitional function is played between amido bottom and Cu conductive films is adopted using the method for ion beam sputtering Ti films
The stress that ion beam sputtering Cu films can be reduced with the transition film improves the binding force between conductive Cu films and substrate, can
Improve the reliability of jam sensor；
Two, the conductive strain piece made in the utility model, strain ga(u)ge conductive film layer are heavy using Assisted by Ion Beam
The thickness that long-pending method makes is the Cu film layers of 600nm, which can reduce film due to the too thin boundary generated and impurity
Effect improves the job stability of Thin film conductive foil gauge；
Three, the utility model is deposited on strain ga(u)ge conductive film layer (Cu conductive strains piece) and is provided with using ion beam
The Si that sputtering method makes3N4Protective film, can prevent Cu conductive strains piece because being influenced by environment such as ambient humidity, temperature after
Film surface aoxidizes, and improves the reliability of jam sensor；
Four, the utility model uses the method for ion beam sputtering in Cu films on the extraction electrode at conductive strain piece both ends
The Au films that upper redeposition a layer thickness is 300nm, make lead welding electrode be not easy to be aoxidized, improve the solderable of electrode pads
Property and stability；
Five, the utility model can be such that the sensitivity of jam sensor, resolution ratio, measurement range, measurement accuracy etc. is carried
It is high, it can be achieved that reliable, stably measured to jam opening signal, meets aerospace craft engine control system signal testing need
It wants.
It tests and detects through designer, compared with existing glue sheet type sensor, properties have the utility model
It is improved, design parameter is as follows：
(1), strain gauge resistance value (conducting wire containing both ends) is between the Ω of 0.8 Ω~1,0.93 ± 0.05 Ω of average value；
(2), limit tolerance electric current is more than 1.6A, and the working time is more than 10min；
(3), operating current is more than 0.5A, and continuous working period is not less than 11h；
(4), mechanical strength：Can free bend, around bilge radius be less than 2mm, can arbitrarily be distorted in three, space direction, there is one
Determine intensity, the stretch breaking strength of strain gauge is in 3.0~4.5kg；
(5), insulation resistance：After keeping the temperature 1 hour under ambient temperature and moisture, test voltage 100V, insulation resistance is more than 100M Ω；
It is 98% in relative humidity, temperature is 25 ± 5 DEG C, and after keeping the temperature 8 hours, test voltage 100V, insulation resistance is more than 50M Ω.
Description of the drawings
Fig. 1 is the side view of the utility model to structural schematic diagram.
Fig. 2 is the vertical view of the utility model to structural schematic diagram.
Each numeral mark title is respectively in attached drawing：1- substrates, 2- transition film layers, 3- strain ga(u)ge conductive film layers,
4- protection film layers, 5- electrode diaphragms.
Specific implementation mode
The utility model content is described further below with reference to attached drawing, but the actual fabrication structure of the utility model
It is not limited in following embodiments.
Referring to attached drawing, it is described in the utility model based on the jam sensor of ion beam sputtering film by polyimide substrate
1 and make assembly of thin films structure composition on the base 1, film structure as shown in Figure 1, be followed successively by from bottom to top transition film layer 2,
Strain ga(u)ge conductive film layer 3, protection film layer 4 and electrode diaphragm 5.Transition film layer 2 is to be produced on polyamides Asia using ion beam method
The Ti film material plies that thickness on amido bottom 1 is 200nm.Strain ga(u)ge conductive film layer 3 is to be sputtered using Assisted by Ion Beam
The method Cu conductive film layers that deposition thickness is 600 nanometers in transition film layer 2, are made on Cu conductive film layers by the method for photoetching
There are conductive strain piece, strain ga(u)ge conductive film layer 3 to be in the intermediate region of substrate (referring to Fig. 2).Protection film layer 4 be using from
Beamlet sputtering method is produced on the Si that the thickness on strain ga(u)ge conductive film layer 3 is 200 nanometers3N4Film can prevent outside water
The pollution to conductive film such as vapour, improves the stability of thin film sensor.Electrode diaphragm 5 is in conductive film layer resistance strain gage
Au films are deposited using ion beam sputtering on the extraction electrode of both ends, thickness is 300 nanometers.
The preparation process of the utility model product is：
1, precondition substrate surface：Ultrasound is carried out to 1 surface of polyimide substrate and involves ion beam bombardment secondary cleaning；
2, transition film layer 2 is made：It is thin using ion beam sputtering depositing Ti transition on the surface of the substrate 1 of after-treatment
Film；
3, conductive film is made：One layer of Cu conductive thin is deposited using the method for ion beam sputtering in Ti transition film surfaces
Film；
4, conductive strain piece figure is made：In strain conduction Cu film surfaces positive-tone photo is uniformly coated with sol evenning machine
Glue, then be exposed by ultraviolet exposure machine with mask plate, then develop, leave designed strain conductive strain piece light
Photoresist cover graphics；
5, strain ga(u)ge conductive film layer 3 is made after etching foil gauge figure：Using the method for ion beam etching, etch away
Other than photoresist cover graphics after extra Cu film layers, the covering of conductive strain on piece is got rid of with absolute ethyl alcohol ultrasonic cleaning
Photoresist obtains designed strain ga(u)ge conductive film layer 3；
6, protection film pattern is made：Film surface after etching applies positive photoresist, ultraviolet exposure is carried out with mask plate
Light, development, to carrying out covering photoresist protection on extraction electrode；
7, protective film 4 is made：Using conductive strain on piece deposition of the method for ion beam reactive sputtering other than electrode
One layer of Si3N4Protective film, then the covering photoresist on electrode is removed by ultrasonic cleaning with absolute ethyl alcohol and is protected；
8, electrode pattern is made：With negative photoresist, mask plate design configuration is used in combination to be exposed, develop, completes electrode
Covering photoresist protection in addition；
9, electrode foil 5 is made：Using ion beam sputtering method conductive strain piece both ends extraction electrode Cu film layers
After redeposited layer of Au conductive film, covering photoresist except for the electrodes is gone to protect with absolute ethyl alcohol ultrasonic cleaning.
Claims (2)
1. a kind of jam sensor based on ion beam sputtering film, it is characterised in that：Including one by polyimide insulative material
Expect the substrate (1) made, substrate (1) surface is provided with one layer of transition film layer (2) made by Ti thin-film materials, in transition film
The intermediate region of layer (2) upper surface, which makes, the strain ga(u)ge conductive film layer (3) made by Cu thin-film materials, in resistance-strain
It counts conductive film layer (3) and is equipped with one layer by Si3N4The protection film layer (4) that thin-film material makes, in protection film layer (4) upper surface
Both sides are respectively provided with one piece of electrode diaphragm (5) being connected to strain ga(u)ge conductive film layer (3) both ends extraction electrode, the electrode
Diaphragm (5) is made by Au thin-film materials.
2. the jam sensor according to claim 1 based on ion beam sputtering film, it is characterised in that：The transition film
The thickness of layer (2) is 200nm, and the thickness of the strain ga(u)ge conductive film layer (3) is 600nm, the thickness of the protection film layer (4)
Degree is 200nm, and the thickness of the electrode diaphragm (5) is 200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820133621.0U CN207717276U (en) | 2018-01-26 | 2018-01-26 | A kind of jam sensor based on ion beam sputtering film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820133621.0U CN207717276U (en) | 2018-01-26 | 2018-01-26 | A kind of jam sensor based on ion beam sputtering film |
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| Publication Number | Publication Date |
|---|---|
| CN207717276U true CN207717276U (en) | 2018-08-10 |
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ID=63053136
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| CN201820133621.0U Active CN207717276U (en) | 2018-01-26 | 2018-01-26 | A kind of jam sensor based on ion beam sputtering film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110230031A (en) * | 2019-06-28 | 2019-09-13 | 中北大学 | A kind of passive high-temperature flexible vibrating sensor of broadband and its preparation process |
| CN111156892A (en) * | 2019-12-23 | 2020-05-15 | 陕西电器研究所 | Preparation improvement method of ion beam sputtering coating blocking piece sensor |
-
2018
- 2018-01-26 CN CN201820133621.0U patent/CN207717276U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110230031A (en) * | 2019-06-28 | 2019-09-13 | 中北大学 | A kind of passive high-temperature flexible vibrating sensor of broadband and its preparation process |
| CN110230031B (en) * | 2019-06-28 | 2021-03-02 | 中北大学 | Broadband passive high-temperature-resistant flexible vibration sensor and preparation process thereof |
| CN111156892A (en) * | 2019-12-23 | 2020-05-15 | 陕西电器研究所 | Preparation improvement method of ion beam sputtering coating blocking piece sensor |
| CN111156892B (en) * | 2019-12-23 | 2021-09-24 | 陕西电器研究所 | Preparation improvement method of ion beam sputtering coating blocking piece sensor |
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