CN114705332A - High-sensitivity low-nonlinearity pressure sensor and preparation method thereof - Google Patents
High-sensitivity low-nonlinearity pressure sensor and preparation method thereof Download PDFInfo
- Publication number
- CN114705332A CN114705332A CN202210488986.6A CN202210488986A CN114705332A CN 114705332 A CN114705332 A CN 114705332A CN 202210488986 A CN202210488986 A CN 202210488986A CN 114705332 A CN114705332 A CN 114705332A
- Authority
- CN
- China
- Prior art keywords
- pressure sensor
- layer
- nonlinearity
- silicon
- conduction band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000035945 sensitivity Effects 0.000 claims abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The invention relates to the technical field of MEMS sensors, and discloses a high-sensitivity low-nonlinearity pressure sensor and a preparation method thereof, wherein the high-sensitivity low-nonlinearity pressure sensor comprises a substrate silicon layer, a silicon dioxide insulating layer, a device layer and a silicon nitride passivation layer which are sequentially arranged from bottom to top, four groups of piezoresistors are arranged on the device layer and are respectively arranged right above the middle points of four sides of a stress cup, a conduction band is arranged on the device layer, and the four groups of piezoresistors are connected with electrodes through the conduction band to form a Wheatstone bridge; the pressure sensor structure solves the contradiction of improving the sensitivity and reducing the nonlinearity, and the structure reduces the stress concentration phenomenon relative to an E-shaped cup structure. Compared with the pressure sensor with the traditional structure, the pressure sensor with the new structure has the advantages that the maximum deformation is reduced by 20-30% under the same sensitivity condition, and the nonlinearity of the sensor can be obviously reduced.
Description
Technical Field
The invention relates to the technical field of MEMS sensors, in particular to a high-sensitivity low-nonlinearity pressure sensor and a preparation method thereof.
Background
The pressure sensor is a device or apparatus which senses pressure signals and can convert the pressure signals into electric signals according to a certain rule, and the pressure sensor usually consists of a pressure sensitive element and a signal processing unit. Pressure sensors can be classified into gauge pressure sensors, differential pressure sensors, and absolute pressure sensors according to different types of test pressures.
Pressure sensors are widely used in the fields of aerospace, automotive electronics, industrial control and the like, and can be classified into strain type, capacitance type, piezoresistive type and resonant type according to the principle. The piezoresistive pressure sensor based on MEMS (micro-mechanical system) has the characteristics of high precision, low cost and good stability. With the continuous expansion of the sensor market and the continuous increase of the application scenes of the sensors, the use environment of the sensors becomes more and more severe, and the pressure sensors with high sensitivity and low nonlinearity are favored by practitioners and end users in the industry.
The piezoresistive pressure sensor utilizes the piezoresistive effect of the single crystal silicon material (piezoresistive material) to realize the conversion between the stressed pressure and the output voltage. Four groups of piezoresistor strips which are made of monocrystalline silicon materials and have the same size and the same resistance are arranged at the position with the maximum stress on the periphery of the sensitive film of the pressure sensor and are connected with electrodes through conduction bands, so that the four groups of piezoresistor strips form a Wheatstone bridge, and the bridge is excited by a constant current source or a constant voltage source. When the pressure sensor is under the action of pressure, the sensitive film generates stress, the resistivity of the resistor strip changes, and the output voltage under the pressure can be measured through the Wheatstone bridge. When the pressure applied to the resistor strip is larger, the stress generated by the sensitive film is larger, and the voltage output by the corresponding pressure sensor is larger, namely the sensitivity is larger, but the larger the sensitivity is, the larger the deformation is, and when the deformation is larger, the nonlinearity of the sensor is larger, and the nonlinearity increase can seriously affect the performance of the sensor, so that the nonlinearity is reduced while the sensitivity of the sensor is increased to ensure high performance of the sensor.
The existing pressure sensor has the following defects: 1. the sensitive film of the sensor is generally a plane film, and the sensor adopting the film structure has a pair of contradictions of improving the sensitivity and reducing the nonlinearity; 2. the sensor adopting the planar membrane structure has larger nonlinear change along with the continuous increase of the environmental pressure; 3. for the sensor structure of the E-shaped cup, the novel structure has smaller concentrated stress compared with the former structure.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a high-sensitivity low-nonlinearity pressure sensor and a preparation method thereof, which can ensure the sensitivity of the piezoresistive pressure sensor, reduce the nonlinearity of the piezoresistive pressure sensor to the maximum extent and solve the problem of contradiction between the improvement of the sensitivity of the pressure sensor and the reduction of the nonlinearity of the pressure sensor.
(II) technical scheme
In order to achieve the purpose, the invention provides the following technical scheme: a high-sensitivity low-nonlinearity pressure sensor comprises a substrate silicon layer, a silicon dioxide insulating layer, a device layer and a silicon nitride passivation layer which are sequentially arranged from bottom to top, wherein four groups of piezoresistors are arranged on the device layer and are respectively arranged right above the middle points of four sides of a stress cup, a conduction band is arranged on the device layer, the four groups of piezoresistors are connected with electrodes through the conduction band to form a Wheatstone bridge, and the silicon dioxide is deposited around the four groups of piezoresistors and the conduction band.
Preferably, the sensitive film is provided with a platform body of an inverted pyramid structure consisting of a plurality of bosses.
A preparation method of a high-sensitivity low-nonlinearity pressure sensor is characterized by comprising the following steps:
step 1: preparing an SOI (silicon on insulator) sheet, wherein the SOI sheet consists of a substrate silicon layer, a silicon dioxide insulating layer and a device layer;
step 2: carrying out ion implantation on the SOI device layer, and forming a piezoresistor strip by etching;
and step 3: cleaning an SOI (silicon on insulator) sheet, and annealing the SOI sheet at high temperature of 700-800 ℃;
and 4, step 4: forming a connecting conduction band through a vapor deposition or sputtering process;
and 5: forming a silicon dioxide insulating layer around the piezoresistor strips and the connecting conduction band by an LPCVD (low pressure chemical vapor deposition) process;
step 6: etching away the silicon dioxide insulating layer deposited on the piezoresistor strip and the connecting conduction band;
and 7: in order to improve the corrosion resistance of the pressure sensor, a silicon nitride passivation layer with the thickness of 100nm-1000nm is formed above the piezoresistor strip;
and 8: etching 5-12 square bosses on the opposite surface of the device layer by using 5-12 square mask plates to finally form an inverted pyramid-shaped boss structure;
and step 9: removing the mask plate at the center of the surface, continuously etching the surface to finally form a stress cup and a pressure sensor sensitive film with an inverted pyramid structure at the center part;
step 10: forming an electrode connection hole in the passivation layer by photolithography;
step 11: and forming a metal layer inside the electrode connecting hole through magnetron sputtering, and finally forming an electrode.
Preferably, the width of the first layer of square mask is: 600- & lt800 & gt, decreasing from the second layer by 50-100 & mu.
Preferably, the thickness of the substrate silicon layer is 200-300um, the thickness of the silicon dioxide insulating layer is 3-5um, and the thickness of the device layer is 0.5-2 um.
Preferably, the varistor strips are long by wide by high: 100um 10um 0.5-2um, the silicon dioxide insulating layer is 0.5-2um thick.
Preferably, the height of the inverted pyramid-shaped boss structure is 3-5 um.
(III) advantageous effects
Compared with the prior art, the invention provides a high-sensitivity low-nonlinearity pressure sensor and a preparation method thereof, and the sensor has the following beneficial effects:
compared with the E-shaped cup structure, the pressure sensor with the structure reduces the stress concentration phenomenon, and compared with the pressure sensor with the traditional structure, the pressure sensor with the new structure has the advantage that the deformation is reduced by 20-30% under the same stress condition.
Drawings
FIG. 1 is a cross-sectional view of a pressure sensor of the present invention;
FIG. 2 is an enlarged view of a portion of the boss of the present invention;
FIG. 3 is a schematic view of the inventive silicon nitride layer removal mechanism;
FIG. 4 is a rear view of the pressure sensor of the present invention;
FIG. 5 is a diagram of an etching step of the present invention.
In the figure: 1. a substrate silicon layer; 2. a silicon dioxide insulating layer; 3. a device layer; 4. a silicon nitride passivation layer; 5. a voltage dependent resistor; 6. a stress cup; 7. a table body; 8. a boss; 9. a sensitive film; 10. conducting a band; 11. and an electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
A high-sensitivity low-nonlinearity pressure sensor comprises a substrate silicon layer 1, a silicon dioxide insulating layer 2, a device layer 3 and a silicon nitride passivation layer 4 which are sequentially arranged from bottom to top, wherein four groups of piezoresistors 5 are arranged on the device layer 3 and are respectively arranged right above the midpoints of four sides of a stress cup 6, a conduction band 10 is arranged on the device layer 3, the four groups of piezoresistors 5 are connected with electrodes 11 through the conduction band 10 to form a Wheatstone bridge, and silicon dioxide is deposited around the four groups of piezoresistors 5 and the conduction band 10.
In this embodiment, the sensitive film 9 is a platform 7 of an inverted pyramid structure formed by a plurality of bosses 8.
The embodiment also provides a preparation method as follows:
step 1: preparing an SOI (silicon on insulator) sheet, wherein the SOI sheet consists of a substrate silicon layer, a silicon dioxide insulating layer and a device layer;
step 2: carrying out ion implantation on the SOI device layer, and forming a piezoresistor strip by etching;
and step 3: cleaning an SOI (silicon on insulator) sheet, and annealing the SOI sheet at high temperature of 700-800 ℃;
and 4, step 4: forming a connecting conduction band through a vapor deposition or sputtering process;
and 5: forming a silicon dioxide insulating layer around the piezoresistor strips and the connecting conduction band by an LPCVD (low pressure chemical vapor deposition) process;
step 6: etching away the silicon dioxide insulating layer deposited on the piezoresistor strip and the connecting conduction band;
and 7: in order to improve the corrosion resistance of the pressure sensor, a silicon nitride passivation layer with the thickness of 100nm-1000nm is formed above the piezoresistor strip;
and 8: etching 5-12 square bosses on the opposite surface of the device layer by using 5-12 square mask plates to finally form an inverted pyramid-shaped boss structure;
and step 9: removing the mask plate in the center of the surface, continuously etching the surface, and finally forming a stress cup and a pressure sensor sensitive film with an inverted pyramid structure in the center;
step 10: forming an electrode connection hole in the passivation layer by photolithography;
step 11: and forming a metal layer inside the electrode connecting hole through magnetron sputtering, and finally forming an electrode.
In this embodiment, specifically, the width of the first layer square mask is: 600- & lt800 & gt, decreasing from the second layer by 50-100 & mu.
In this embodiment, the thickness of the substrate silicon layer is 200-300um, the thickness of the silicon dioxide insulating layer is 3-5um, and the thickness of the device layer is 0.5-2 um.
In this embodiment, specifically, the length, width and height of the varistor strips: 100um 10um 0.5-2um, silicon dioxide insulating layer thickness 0.5-2 um.
In this embodiment, the height of the inverted pyramid-shaped projection structure is specifically 3 to 5 um.
Compared with the pressure sensor with the traditional structure, the deformation of the pressure sensor with the new structure is reduced by 20-30% under the same stress condition.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A high-sensitivity low-nonlinearity pressure sensor, comprising: including substrate silicon layer (1), silica insulating layer (2), device layer (3) and silicon nitride passivation layer (4) arranged in proper order from bottom to top, be equipped with four groups piezo-resistor (5) on device layer (3) to set up position directly over the mid point of stress cup (6) four sides respectively, be equipped with conduction band (10) on device layer (3), four groups piezo-resistor (5) are passed through conduction band (10) are connected with electrode (11) and are formed wheatstone bridge, four groups piezo-resistor (5) reach deposit has silicon dioxide around conduction band (10).
2. A high sensitivity low non-linear pressure sensor according to claim 1 wherein: the sensitive film (9) is provided with a table body (7) of an inverted pyramid structure consisting of a plurality of bosses (8).
3. A method for preparing a high-sensitivity low-nonlinearity pressure sensor according to any one of claims 1-2, comprising the steps of:
step 1: preparing an SOI (silicon on insulator) sheet, wherein the SOI sheet consists of a substrate silicon layer, a silicon dioxide insulating layer and a device layer;
step 2: carrying out ion implantation on the SOI device layer, and forming a piezoresistor strip by etching;
and step 3: cleaning an SOI (silicon on insulator) sheet, and annealing the SOI sheet at high temperature of 700-800 ℃;
and 4, step 4: forming a connecting conduction band through a vapor deposition or sputtering process;
and 5: forming a silicon dioxide insulating layer around the piezoresistor strips and the connecting conduction band by an LPCVD (low pressure chemical vapor deposition) process;
step 6: etching away the silicon dioxide insulating layer deposited on the piezoresistor strip and the connecting conduction band;
and 7: in order to improve the corrosion resistance of the pressure sensor, a silicon nitride passivation layer with the thickness of 100nm-1000nm is formed above the piezoresistor strip;
and 8: etching 5-12 square bosses on the opposite surface of the device layer by using 5-12 square mask plates to finally form an inverted pyramid-shaped boss structure;
and step 9: removing the mask plate in the center of the surface, continuously etching the surface, and finally forming a stress cup and a pressure sensor sensitive film with an inverted pyramid structure in the center;
step 10: forming an electrode connection hole in the passivation layer by photolithography;
step 11: and forming a metal layer inside the electrode connecting hole through magnetron sputtering, and finally forming an electrode.
4. The method for preparing a high-sensitivity low-nonlinearity pressure sensor according to claim 3, wherein: the width of the first layer of square mask plate is as follows: 600-800um, and the decreasing amplitude is 50-100um from the second layer.
5. The method for preparing a high-sensitivity low-nonlinearity pressure sensor according to claim 3, wherein: the thickness of the substrate silicon layer is 200-300um, the thickness of the silicon dioxide insulating layer is 3-5um, and the thickness of the device layer is 0.5-2 um.
6. The method for preparing a high-sensitivity low-nonlinearity pressure sensor according to claim 3, wherein: the piezoresistor strips are long, wide and high: 100um 10um 0.5-2um, the silicon dioxide insulating layer is 0.5-2um thick.
7. The method for preparing a high-sensitivity low-nonlinearity pressure sensor according to claim 3, wherein: the height of the inverted pyramid-shaped boss structure is 3-5 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210488986.6A CN114705332A (en) | 2022-05-06 | 2022-05-06 | High-sensitivity low-nonlinearity pressure sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210488986.6A CN114705332A (en) | 2022-05-06 | 2022-05-06 | High-sensitivity low-nonlinearity pressure sensor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114705332A true CN114705332A (en) | 2022-07-05 |
Family
ID=82176908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210488986.6A Pending CN114705332A (en) | 2022-05-06 | 2022-05-06 | High-sensitivity low-nonlinearity pressure sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114705332A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115165174A (en) * | 2022-08-26 | 2022-10-11 | 南京高华科技股份有限公司 | MEMS piezoresistive pressure sensor and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1190736A (en) * | 1998-03-04 | 1998-08-19 | 中国科学院电子学研究所 | Sensitive film-cathode composite type pressure sensor |
| KR20110121138A (en) * | 2010-04-30 | 2011-11-07 | (주)코아칩스 | Packiging structure of pressure sensor |
| CN105784254A (en) * | 2016-04-20 | 2016-07-20 | 南方科技大学 | Flexible pressure sensor and touch screen |
| CN111122044A (en) * | 2019-11-27 | 2020-05-08 | 苏州长风航空电子有限公司 | Airborne aviation high-sensitivity output pressure chip and preparation method thereof |
| CN211954507U (en) * | 2020-06-22 | 2020-11-17 | 明石创新(烟台)微纳传感技术研究院有限公司 | Beam island membrane piezoresistive pressure sensor |
| CN112357877A (en) * | 2021-01-12 | 2021-02-12 | 东南大学 | MEMS SOI pressure sensor and preparation method thereof |
| CN114184309A (en) * | 2021-10-27 | 2022-03-15 | 贵州航天智慧农业有限公司 | Piezoresistive MEMS sensor and preparation method thereof |
| CN114235233A (en) * | 2021-12-16 | 2022-03-25 | 东南大学 | MEMS pressure sensor and preparation method thereof |
-
2022
- 2022-05-06 CN CN202210488986.6A patent/CN114705332A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1190736A (en) * | 1998-03-04 | 1998-08-19 | 中国科学院电子学研究所 | Sensitive film-cathode composite type pressure sensor |
| KR20110121138A (en) * | 2010-04-30 | 2011-11-07 | (주)코아칩스 | Packiging structure of pressure sensor |
| CN105784254A (en) * | 2016-04-20 | 2016-07-20 | 南方科技大学 | Flexible pressure sensor and touch screen |
| CN111122044A (en) * | 2019-11-27 | 2020-05-08 | 苏州长风航空电子有限公司 | Airborne aviation high-sensitivity output pressure chip and preparation method thereof |
| CN211954507U (en) * | 2020-06-22 | 2020-11-17 | 明石创新(烟台)微纳传感技术研究院有限公司 | Beam island membrane piezoresistive pressure sensor |
| CN112357877A (en) * | 2021-01-12 | 2021-02-12 | 东南大学 | MEMS SOI pressure sensor and preparation method thereof |
| CN114184309A (en) * | 2021-10-27 | 2022-03-15 | 贵州航天智慧农业有限公司 | Piezoresistive MEMS sensor and preparation method thereof |
| CN114235233A (en) * | 2021-12-16 | 2022-03-25 | 东南大学 | MEMS pressure sensor and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115165174A (en) * | 2022-08-26 | 2022-10-11 | 南京高华科技股份有限公司 | MEMS piezoresistive pressure sensor and preparation method thereof |
| CN115165174B (en) * | 2022-08-26 | 2024-01-30 | 南京高华科技股份有限公司 | MEMS piezoresistive pressure sensor and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3114570B2 (en) | Capacitive pressure sensor | |
| US7571651B2 (en) | Capacitive pressure sensor and method for fabricating the same | |
| CN101153825A (en) | Structure of silicon micromachine resonant micro-pressure sensor chip and its manufacturing method | |
| CN113551812B (en) | Cross beam film stress concentration micro-pressure sensor chip and preparation method thereof | |
| CN113639902B (en) | Pressure sensor and manufacturing method thereof | |
| EP0198018A1 (en) | Capacitive sensing cell made of brittle material | |
| CN114705332A (en) | High-sensitivity low-nonlinearity pressure sensor and preparation method thereof | |
| CN109883581B (en) | Cantilever beam type differential resonance pressure sensor chip | |
| CN113218544B (en) | Micro-pressure sensor chip with stress concentration structure and preparation method thereof | |
| JP5353996B2 (en) | pressure sensor | |
| CN206362469U (en) | A kind of high temperature film pressure-sensing device | |
| Habibi et al. | A surface micromachined capacitive absolute pressure sensor array on a glass substrate | |
| CN88201030U (en) | Overpressure-proof type pressure transducer with rectangle dual-island silicon-film structure | |
| CN116007831B (en) | Combined MEMS vacuum gauge and manufacturing method thereof | |
| CA1178083A (en) | Measuring device using a strain gauge | |
| CN113758613B (en) | SOI-based resistance center placed piezoresistive pressure sensor | |
| CN105300573A (en) | Beam membrane structure piezoelectric transducer and manufacturing method | |
| CN113418585B (en) | SAW weighing sensor | |
| CN211717679U (en) | Beam-island-film strain type pressure sensor | |
| JP2813721B2 (en) | Capacitive pressure sensor | |
| KR100427430B1 (en) | Metal thin film pressure sensor and method for making the same | |
| JPH0666658A (en) | Capacitive pressure sensor | |
| JP2838361B2 (en) | Pressure sensor integrated pressure sensor | |
| JP3293533B2 (en) | Strain detection element | |
| JPS62274229A (en) | Distributed type contact force sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |