CN110211970A - 显示面板及其制作方法 - Google Patents
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Abstract
本发明提供一种显示面板及其制作方法。显示面板包括阵列基板、背光源和阵列基板偏光片。阵列基板具有若干薄膜晶体管;背光源设于阵列基板下方,用以提供光源;阵列基板偏光片设于阵列基板朝向所述背光源的一面,其具有遮光部,遮光部对应于薄膜晶体管。显示面板的制作方法包括步骤:制作阵列基板、制作阵列基板偏光片、贴附阵列基板偏光片和贴附背光源。本发明通过去除现有阵列基板上的屏蔽层(LS)以保持薄膜晶体管的半导体沟道区域下方的平整度,并且在薄膜晶体管相对应的偏光片上增加遮光部以保护薄膜晶体管的半导体沟道区域免受光线的影响,可节约生产成本和时间。
Description
技术领域
本发明涉及显示领域,尤其涉及一种显示面板及其制作方法。
背景技术
目前低温多晶硅(LTPS)产品阵列基板由单独的开关元件薄膜晶体管(Thin FilmTransistor,TFT)与储存电容(Cst)及像素透明电极(Pixel Electrode)组成,利用离子注入的方式增强薄膜晶体管半导体性能,在扫描线(Gate)的电场作用下实现像素透明电极(Pixel Electrode)的充电放电过程,调节储存电容(Cst)下极板电压以控制液晶分子的旋转角度,从而实现液晶显示器产品炫彩的显示效果。
但是现有液晶显示器的低温多晶硅阵列基板都会在薄膜晶体管下方设置遮光层(LS),遮光层会影响薄膜晶体管半导体沟道区域下方的平整度,使之不能保持完全的平坦状态。
因此,有必要提供一种新的显示面板及其制作方法,以克服现有技术中存在的问题。
发明内容
本发明的目的在于,提供一种显示面板及其制作方法,通过去除现有阵列基板上的屏蔽层(LS)以保持薄膜晶体管半导体沟道区域下方的平整度,并且在薄膜晶体管相对应的偏光片上增加遮光层,利用液晶显示器产品偏光片贴附后,在偏光片外侧贴附遮光层以遮挡背光源的光源,以保护薄膜晶体管半导体沟道区域免受光线的影响,同时节省制作遮光层的光罩成本并缩短阵列基板的生产周期,从而缩短显示面板整体制程的生产周期。
为了解决上述问题,本发明其中一实施例中提供一种显示面板,包括阵列基板、背光源和阵列基板偏光片。具体地讲,所述阵列基板具有若干薄膜晶体管;所述背光源设于所述阵列基板下方,用以提供光源;所述阵列基板偏光片设于所述阵列基板朝向所述背光源的一面,所述阵列基板偏光片具有遮光部,所述遮光部对应于所述薄膜晶体管。
进一步地,所述阵列基板偏光片包括偏光片本体;所述遮光部形成于所述偏光片本体远离所述阵列基板的一面。
进一步地,所述阵列基板偏光片包括第一胶层和第二胶层。所述第一胶层用以粘贴所述偏光片本体以及所述阵列基板;所述第二胶层用以粘贴所述偏光片本体以及所述背光源。
进一步地,所述阵列基板包括衬底层、缓冲层和驱动电路层。具体地讲,所述衬底层设于所述阵列基板偏光片具有遮光部的一面;所述缓冲层设于所述衬底层一侧的表面;所述驱动电路层设于所述缓冲层背离所述衬底层的一面;所述薄膜晶体管设于所述驱动电路层内。
进一步地,所述薄膜晶体管包括层叠设置的有源层、栅极绝缘层、栅极层、层间绝缘层和源漏极层。具体地讲,所述有源层设于所述阵列基板偏光片具有遮光部的一面;所述栅极绝缘层设于所述栅极层背离所述阵列基板偏光片的一面;所述栅极层设于所述栅极绝缘层背离所述有源层的一面;所述层间绝缘层设于所述栅极层背离所述栅极绝缘层的一面;所述源漏极层设于所述层间绝缘层背离所述栅极层的一面。
进一步地,所述遮光部对应于所述有源层。
进一步地,所述有源层包括掺杂区域和半导体沟道区域;所述遮光部对应于所述半导体沟道区域。
本发明又一实施例中提供一种显示面板的制作方法,包括如下步骤:
制作一阵列基板,所述阵列基板具有若干薄膜晶体管;
提供一阵列基板偏光片,将所述阵列基板偏光片贴附于所述阵列基板的下表面;在所述阵列基板偏光片的一面形成遮光部,所述遮光部对应于所述薄膜晶体管;以及
将所述背光源组装于所述阵列基板的下表面。
进一步地,所述阵列基板偏光片包括偏光片本体,以及设于所述偏光片本体一面的第一胶层和设于偏光片本体另一面的第二胶层;在将所述阵列基板偏光片贴附于所述阵列基板的下表面步骤中,包括通过所述第一胶层将所述阵列基板偏光片贴附于所述阵列基板的下表面;在将所述背光源组装于所述阵列基板的下表面步骤中,通过所述第二胶层将所述背光源组装于所述阵列基板的下表面。
进一步地,制作所述薄膜晶体管包括步骤:
制作一有源层,所述有源层包括半导体沟道区以及掺杂区域;
制作栅极绝缘层于所述有源层背离所述阵列基板偏光片的一面;
制作栅极层于所述栅极绝缘层背离所述有源层的一面并图形化处理;
制作层间绝缘层于所述栅极层背离所述栅极绝缘层的一面;以及
制作源漏极层于所述间绝缘层背离所述栅极层的一面并图形化处理;
在形成所述遮光部步骤中,将所述遮光部贴附于所述阵列基板偏光片远离所述阵列基板的一面,且所述遮光部对应于所述半导体沟道区。
本发明的有益效果在于,提供一种显示面板及其制作方法,通过去除现有阵列基板上的屏蔽层(LS)以保持薄膜晶体管半导体沟道区域下方的平整度,并且在薄膜晶体管相对应的偏光片上增加遮光层,利用液晶显示器产品偏光片贴附后,在偏光片外侧贴附遮光层以遮挡背光源的光源,以保护薄膜晶体管半导体沟道区域免受光线的影响,同时节省制作遮光层的光罩成本并缩短阵列基板的生产周期,从而缩短显示面板整体制程的生产周期。
附图说明
下面结合附图,通过对本申请的具体实施方式详细描述,将使本申请的技术方案及其它有益效果显而易见。
图1为本发明一实施例中一种显示面板的结构示意图;
图2为本发明一实施例中一种显示面板的仰视图;
图3为本发明一实施例中所述彩膜基板偏光片的结构示意图;
图4为本发明另一实施例中一种显示面板的结构示意图;
图5为本发明一实施例中所述阵列基板的结构示意图;
图6为本发明一实施例中一种显示面板的制作方法的流程图;
图7为本发明一实施例中制作所述薄膜晶体管的流程图;
图8为本发明一实施例中制作所述阵列基板的流程图。
图中部件标识如下:
1、阵列基板,2、阵列基板偏光片,3、背光源,4、彩膜基板,
5、液晶层,6、彩膜基板偏光片,10、薄膜晶体管,11、半导体沟道区域,
12、掺杂区域,20、遮光部,21、第一过孔,22、第二过孔,
31、源极,32、漏极,100、显示面板,101、有源层,
102、栅极绝缘层,103、栅极层,104、层间绝缘层,105、源漏极层,
111、衬底层,112、缓冲层,113、驱动电路层,114、平坦层,
115、阳极层,116、像素定义层,201、离型纸,202、第一胶层,
203、偏光片本体,204、第二胶层,205、保护膜。
具体实施方式
以下结合说明书附图详细说明本发明的优选实施例,以向本领域中的技术人员完整介绍本发明的技术内容,以举例证明本发明可以实施,使得本发明公开的技术内容更加清楚,使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现,本发明的保护范围并非仅限于文中提到的实施例,下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等,仅是附图中的方向,本文所使用的方向用语是用来解释和说明本发明,而不是用来限定本发明的保护范围。
在附图中,结构相同的部件以相同数字标号表示,各处结构或功能相似的组件以相似数字标号表示。此外,为了便于理解和描述,附图所示的每一组件的尺寸和厚度是任意示出的,本发明并没有限定每个组件的尺寸和厚度。
当某些组件,被描述为“在”另一组件“上”时,所述组件可以直接置于所述另一组件上;也可以存在一中间组件,所述组件置于所述中间组件上,且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时,二者可以理解为直接“安装”或“连接”,或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
请参阅图1、图2所示,本发明其中一实施例中提供一种显示面板100,包括阵列基板1、背光源3和位于两者之间的阵列基板偏光片2。具体地讲,所述阵列基板1具有若干薄膜晶体管10;所述背光源3设于所述阵列基板1下方,用以提供光源;所述阵列基板偏光片2设于所述阵列基板1朝向所述背光源3的一面,所述阵列基板偏光片2具有遮光部20,所述遮光部20对应于所述薄膜晶体管10,用以遮挡所述背光源3的光线进入所述薄膜晶体管10。这样在所述阵列基板偏光片2具有遮光部20以遮挡光源的光线,可代替现有的阵列基板内的屏蔽层(LS),以保护所述薄膜晶体管10免受光线的影响。
请参阅图3所示,所述阵列基板偏光片2包括偏光片本体203;所述遮光部20形成于所述偏光片本体203远离所述阵列基板1的一面。所述阵列基板偏光片2还包括第一胶层202,用以粘贴所述偏光片本体203以及所述阵列基板1;以及第二胶层204,用以粘贴所述偏光片本体203以及所述背光源3。在使用所述阵列基板偏光片2前,为了保持所述第一胶层202和所述第二胶层204的粘性,在所述第一胶层202一侧贴附一离型纸202,在所述第二胶层204一侧贴附一保护膜205。
请参阅图4所示,在其他实施例中,所述显示面板100还包括与所述阵列基板1相对设置的彩膜基板4,及位于所述阵列基板1与所述彩膜基板4之间的液晶层5。并且所述显示面板100还包括彩膜基板偏光片6,所述彩膜基板偏光片6设于所述彩膜基板4背离所述阵列基板偏光片2的表面。所述彩膜基板4包括彩色滤光片。所述阵列基板偏光片2与所述彩膜基板4的偏光位置相对垂直设置,光线经所述阵列基板偏光片2选择部分平行光线进入所述液晶盒1内,经所述液晶层5的进行90度的偏转后可通过所述彩膜基板4射出。其中所述阵列基板1的面积与所述彩膜基板4的面积相同,这样可使得两者对位方便。
请参阅图5所示,在本实施例中,所述阵列基板1还包括衬底层111、缓冲层112和驱动电路层113。具体地讲,所述衬底层11设于所述阵列基板偏光片2具有遮光部20的一面;所述缓冲层112设于所述衬底层111一侧的表面;所述驱动电路层113设于所述缓冲层112背离所述衬底层111的一面,所述薄膜晶体管10设于所述驱动电路层113内。其中,所述衬底层111的材料包括柔性聚酰亚胺衬底;所述缓冲层112包括单层或多层结构,所述缓冲层112的材料一般为SiOx、SiNx或其混合物。所述衬底层111或所述缓冲层112起到缓冲保护的作用。
在本实施例中,所述阵列基板1还包括平坦层114、阳极层115和像素定义层116。具体地讲,所述平坦层114设于所述驱动电路层113远离所述基板一侧的表面;所述阳极层115设于所述平坦层114远离所述驱动电路层113一侧的表面,所述阳极层115电连接至所述驱动电路层113,用以传输电信号;所述像素定义层116设于所述阳极层115远离所述平坦层114一侧的表面。所述像素定义层116上还设有有机发光层(图未示),所述有机发光层与所述阳极层115相对设置,有机发光层穿过所述像素定义层116连接至所述阳极层115,使得所述有机发光层获得电信号,用以发光。
请参阅图5所示,在本实施例中,所述薄膜晶体管10包括有源层101、栅极绝缘层102、栅极层103、层间绝缘层104和源漏极层105。具体地讲,所述有源层101设于所述缓冲层112背离所述衬底层111的一面,亦即设于所述阵列基板偏光片2具有遮光部20的一面;所述栅极绝缘层102设于所述有源层101背离所述缓冲层112的一面,亦即设于所述栅极层101背离所述阵列基板偏光片2的一面;所述栅极层103设于所述栅极绝缘层102背离所述有源层101的一面;所述层间绝缘层104设于所述栅极层103背离所述栅极绝缘层102的一面;所述源漏极层105设于所述层间绝缘层104背离所述栅极层103的一面。其中,所述遮光部20对应于所述有源层101,以保护所述有源层101免受光线的影响。
请参阅图5所示,在本实施例中,所述有源层101包括掺杂区域12和半导体沟道区域11,所述遮光部20对应于所述半导体沟道区域11。更具体的,所述源极31通过第一过孔21与所述掺杂区域12的源极区域电连接,所述漏极32通过第二过孔22与所述掺杂区域12的漏极区域电连接。以上所述有源层101用于形成低温多晶硅型阵列基板。其中,所述源漏极层105的材料包括半导体,当所述源漏极层105制作完成,对所述源漏极层105两侧进行掺杂处理,形成所述掺杂区域12,未掺杂的区域为所述半导体沟道区域11,用于形成离子注入沟道。所述遮光部20对应所述半导体沟道区域11设置用于遮光,以保护所述半导体沟道区域11免受光线的影响。
请再参阅图6所示,本发明其中一实施例中提供一种显示面板100的制作方法,包括步骤S1-S3。
步骤S1:制作一阵列基板1,所述阵列基板1具有若干薄膜晶体管10。
步骤S2:提供一阵列基板偏光片2,将所述阵列基板偏光片2贴附于所述阵列基板1的下表面;在所述阵列基板偏光片1的一面形成遮光部20,所述遮光部20对应于所述薄膜晶体管10。
步骤S3:将所述背光源3组装于所述阵列基板1的下表面。
其中,所述阵列基板偏光片2包括偏光片本体203,以及设于所述偏光片本体203一面的第一胶层202和设于偏光片本体另一面的第二胶层204;在将所述阵列基板偏光片2贴附于所述阵列基板1的下表面步骤中,包括通过所述第一胶层202将所述阵列基板偏光片2贴附于所述阵列基板1的下表面;在将所述背光源3组装于所述阵列基板1的下表面步骤中,通过所述第二胶层204将所述背光源3组装于所述阵列基板1的下表面。
为了保持所述第一胶层202和所述第二胶层204的粘性,在所述第一胶层202一侧贴附一离型纸201,在所述偏光片本体203背离所述离型纸201一面包括若干遮光部20,在所述第二胶层204一侧贴附一保护膜205,形成阵列基板偏光片2,其结构示意图见图3所示。在使用所述阵列基板偏光片2时需将所述离型纸201和所述保护膜205撕除。
本发明通过去除现有阵列基板上的屏蔽层(LS)以保持薄膜晶体管10半导体沟道区域11下方的平整度,并且在薄膜晶体管10相对应的所述阵列基板偏光片2上增加遮光部20以保护薄膜晶体管10免受光线的影响,可节约生产成本和时间。
请参阅图7所示,在本实施例中,制作所述阵列基板1的薄膜晶体管10包括步骤:
步骤S11:制作一有源层101于所述缓冲层112的上表面,并对有源层101进行掺杂,以在有源层101上形成半导体沟道区12以及掺杂区域11;
步骤S12:制作栅极绝缘层102于所述有源层101背离所述阵列基板偏光片2的一面;
步骤S13:制作栅极层103于所述栅极绝缘层102背离所述有源层102的一面并图形化处理;
步骤S14:制作层间绝缘层104于所述栅极层103背离所述栅极绝缘层102的一面,并在所述层间绝缘层104上表面制作第一过孔21、第二过孔22,其中所述第一过孔21的孔底为所述掺杂区域11的源极区域,所述第二过孔22的孔底为所述掺杂区域11的漏极区域;以及
步骤S15:制作源漏极层105于所述层间绝缘层104背离所述栅极层103的一面并图形化处理,所述源漏极层105填充所述第一过孔21和所述第二过孔22,在所述第一过孔21相对位置形成源极31,在所述第二过孔22相对位置形成漏极32。
其中,在形成所述遮光部20步骤中,将所述遮光部20贴附于所述阵列基板偏光片2远离所述阵列基板1的一面,且所述遮光部20对应于所述有源层101的所述半导体沟道区域11,以保护所述半导体沟道区域11免受光线的影响。
请参阅图8所示,在本实施例中,所述制作阵列基板1包括步骤S21-S26。
步骤S21:提供一衬底层111;所述衬底层111的材质为聚酰亚胺(PI)或其他缓冲材质,起到缓冲保护的作用。
步骤S22:制作缓冲层112于所述衬底层111的上表面;所述缓冲层112包括单层或多层结构,所述缓冲层112的材料一般为SiOx、SiNx或其混合物。所述衬底层111或所述缓冲层112起到缓冲保护的作用。
步骤S23:制作驱动电路层113于所述缓冲层112背离所述衬底层111的一面;所述驱动电路层113具有若干薄膜晶体管10。
步骤S24:制作平坦层114于所述驱动电路层113背离所述缓冲层112的一面。
步骤S25:制作阳极层115于所述平坦层114背离所述驱动电路层113的一面。所述阳极层115与所述源漏极层105电连接,用以传输电信号。
步骤S26:制作像素定义层116于所述阳极层115背离所述平坦层114的一面并裸露所述阳极层115。所述像素定义层116上还设有有机发光层(图未示),有机发光层与阳所述极层相对设置,所述有机发光层穿过所述像素定义层116连接至所述阳极层115,使得所述有机发光层获得电信号,用以发光。
本发明的有益效果在于,提供一种显示面板及其制作方法,通过去除现有阵列基板上的屏蔽层(LS)以保持薄膜晶体管的半导体沟道区域下方的平整度,并且在薄膜晶体管相对应的偏光片上增加遮光层,利用液晶显示器产品偏光片贴附后,在偏光片外侧贴附遮光层以遮挡背光源的光源,以保护薄膜晶体管的半导体沟道区域免受光线的影响,同时节省制作遮光层的光罩成本并缩短阵列基板的生产周期,从而缩短显示面板整体制程的生产周期。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (10)
1.一种显示面板,其特征在于,包括:
阵列基板,具有若干薄膜晶体管;
背光源,设于所述阵列基板下方,用以提供光源;以及
阵列基板偏光片,设于所述阵列基板朝向所述背光源的一面,所述阵列基板偏光片具有遮光部,所述遮光部对应于所述薄膜晶体管。
2.根据权利要求1所述的显示面板,其特征在于,所述阵列基板偏光片包括
偏光片本体;所述遮光部形成于所述偏光片本体远离所述阵列基板的一面。
3.根据权利要求1所述的显示面板,其特征在于,所述阵列基板偏光片包括:
第一胶层,用以粘贴所述偏光片本体以及所述阵列基板;以及
第二胶层,用以粘贴所述偏光片本体以及所述背光源。
4.根据权利要求1所述的显示面板,其特征在于,所述阵列基板包括:
衬底层,设于所述阵列基板偏光片具有遮光部的一面;
缓冲层,设于所述衬底层一侧的表面;以及
驱动电路层,设于所述缓冲层背离所述衬底层的一面;所述薄膜晶体管设于所述驱动电路层内。
5.根据权利要求1所述的显示面板,其特征在于,所述薄膜晶体管包括:
有源层,设于所述阵列基板偏光片具有遮光部的一面;
栅极绝缘层,设于所述栅极层背离所述阵列基板偏光片的一面;
栅极层,设于所述栅极绝缘层背离所述有源层的一面;
层间绝缘层,设于所述栅极层背离所述栅极绝缘层的一面;以及
源漏极层,设于所述层间绝缘层背离所述栅极层的一面。
6.根据权利要求5所述的显示面板,其特征在于,所述遮光部对应于所述有源层。
7.根据权利要求5所述的显示面板,其特征在于,所述有源层包括:
掺杂区域;以及
半导体沟道区域;
所述遮光部对应于所述半导体沟道区域。
8.一种显示面板的制作方法,其特征在于,包括如下步骤:
制作一阵列基板,所述阵列基板具有若干薄膜晶体管;
提供一阵列基板偏光片,将所述阵列基板偏光片贴附于所述阵列基板的下表面;在所述阵列基板偏光片的一面形成遮光部,所述遮光部对应于所述薄膜晶体管;以及
将所述背光源组装于所述阵列基板的下表面。
9.根据权利要求8所述的显示面板的制作方法,其特征在于,所述阵列基板偏光片包括
偏光片本体,以及
第一胶层,设于所述偏光片本体的一面;
第二胶层,设于偏光片本体的另一面;
在将所述阵列基板偏光片贴附于所述阵列基板的下表面步骤中,包括通过所述第一胶层将所述阵列基板偏光片贴附于所述阵列基板的下表面;在将所述背光源组装于所述阵列基板的下表面步骤中,通过所述第二胶层将所述背光源组装于所述阵列基板的下表面。
10.根据权利要求8所述的显示面板的制作方法,其特征在于,所述制作阵列基板包括步骤:
制作一有源层,所述有源层包括半导体沟道区以及掺杂区域;
制作栅极绝缘层于所述有源层背离所述阵列基板偏光片的一面;
制作栅极层于所述栅极绝缘层背离所述有源层的一面并图形化处理;
制作层间绝缘层于所述栅极层背离所述栅极绝缘层的一面;以及
制作源漏极层于所述间绝缘层背离所述栅极层的一面并图形化处理;
在形成所述遮光部步骤中,将所述遮光部贴附于所述阵列基板偏光片远离所述阵列基板的一面,且所述遮光部对应于所述半导体沟道区。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN203433236U (zh) * | 2013-09-02 | 2014-02-12 | 京东方科技集团股份有限公司 | 阵列基板及3d显示装置 |
CN104698525A (zh) * | 2015-03-31 | 2015-06-10 | 合肥京东方光电科技有限公司 | 一种偏光片、其制作方法、液晶显示面板及显示装置 |
US20160197106A1 (en) * | 2015-01-06 | 2016-07-07 | Samsung Display Co., Ltd. | Photo mask and method of manufacturing thin film transistor using the same |
CN106874866A (zh) * | 2017-02-13 | 2017-06-20 | 京东方科技集团股份有限公司 | 显示装置及其控制方法 |
CN109037242A (zh) * | 2018-08-01 | 2018-12-18 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示面板 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN203433236U (zh) * | 2013-09-02 | 2014-02-12 | 京东方科技集团股份有限公司 | 阵列基板及3d显示装置 |
US20160197106A1 (en) * | 2015-01-06 | 2016-07-07 | Samsung Display Co., Ltd. | Photo mask and method of manufacturing thin film transistor using the same |
CN104698525A (zh) * | 2015-03-31 | 2015-06-10 | 合肥京东方光电科技有限公司 | 一种偏光片、其制作方法、液晶显示面板及显示装置 |
CN106874866A (zh) * | 2017-02-13 | 2017-06-20 | 京东方科技集团股份有限公司 | 显示装置及其控制方法 |
CN109037242A (zh) * | 2018-08-01 | 2018-12-18 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示面板 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116779628A (zh) * | 2023-07-31 | 2023-09-19 | 惠科股份有限公司 | 光感应阵列基板及其制备方法 |
CN116779628B (zh) * | 2023-07-31 | 2024-06-11 | 惠科股份有限公司 | 光感应阵列基板及其制备方法 |
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