CN110211887A - 一种用于大电流电源模块引线键合的锁料孔铜片焊接工艺 - Google Patents

一种用于大电流电源模块引线键合的锁料孔铜片焊接工艺 Download PDF

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CN110211887A
CN110211887A CN201910498847.XA CN201910498847A CN110211887A CN 110211887 A CN110211887 A CN 110211887A CN 201910498847 A CN201910498847 A CN 201910498847A CN 110211887 A CN110211887 A CN 110211887A
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copper sheet
welding
material hole
lock material
sheet metal
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王培洲
李广益
李鹏军
李睿
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Shenzhen Shunyi Microelectronics Co., Ltd.
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Shandong Haisheng Nick Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/842—Applying energy for connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying

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Abstract

本发明公开了一种用于大电流电源模块键合的焊接工艺，所述一种用于大电流电源模块键合的焊接工艺包括：（a）芯片贴膜、划片；（b）芯片粘片；（c）焊接；（d）塑封、固化；（e）激光打标；（f）去溢胶、引脚镀锡；（g）切筋、整形；（h）测试、包装、入库；所述（c）焊接工序中采用金属薄片将芯片上的电极跟管脚连接起来，所述金属片两个端部焊接位置分别设有锁料孔。本发明的有益效果是：杜绝焊膏飞溅，既增加了焊料与铜片的接触面积，保证电连接的充分性和良好的散热效果，又保证了焊接后固化前铜片位置的稳定，上下料和固化过程中不至引起铜片位置发生漂移，保证了封装器件电、热参数的稳定性与一致性。

Description

一种用于大电流电源模块引线键合的锁料孔铜片焊接工艺
技术领域
本发明涉及半导体封装领域，尤其涉及半导体封装技术中键合技术的一种用于大电流电源模块引线键合的锁料孔铜片焊接工艺。
背景技术
铜片焊接工艺代替传统引线键合工艺，在成本、效率、电参数、散热、高频参数等方面的有明显的优势，但是在实际生产工艺中， 经常会遇到以下问题:
1)铜片焊接用的高温焊膏为一种半液体稠状物， 有很大的表面张力，在焊片每小时产出量高达于18K片时，传统铜片焊接时容易将焊膏挤压溢出甚至飞溅，落到芯片其它部位，造成芯片表面沾污甚至引起芯片电极间短路；
2)传统铜片焊接， 铜片通常只能单面通过高温焊膏与芯片压焊区或器件管脚连接，影响半导体器件电连接的充分性， 同时影响器件的散热效果， 使器件热阻增大；
3)在回流焊过程中， 由于焊膏固化过程中表面张力及内应力的影响，所焊接的铜片会发生一定大小的位置漂移，这对于对位置精度要求很高的半导体器件封装来说， 是根本不可接受的，有时甚至直接导致器件报废 。
针对上述技术缺陷，迫切需要一种更好键合工艺来解决上述技术问题。
发明内容
为克服上述现有技术缺陷，本发明提供一种用于大电流电源模块键合的焊接工艺。
本发明所采用的具体技术方案为：
一种用于大电流电源模块引线键合的锁料孔铜片焊接工艺，所述一种用于大电流电源模块键合的焊接工艺包括：
（a）芯片贴膜、划片；
（b）芯片粘片；
（c）焊接；
（d）塑封、固化；
（e）激光打标；
（f）去溢胶、引脚镀锡；
（g）切筋、整形；
（h）测试、包装、入库；
上述工艺工序中除工序（c）外，其他各工序均为现有常规工艺技术手段，所述（c）焊接工序中采用金属薄片将芯片上的电极跟管脚连接起来，所述金属薄片两个端部焊接位置分别设有锁料孔，通过在焊接铜片焊接区域增设锁料孔，在常规工艺条件及金属薄片焊接速度下， 金属薄片焊接时稠状焊膏的表面张力大部分被抵消，尽可能控制稠状焊膏外溢，基本可杜绝焊膏飞溅，此外，由于金属薄片焊接区域增设了锁料孔，焊接时焊膏通过锁料孔，溢出到金属薄片的上方，可覆盖金属薄片的上下两面，这样在金属薄片的上下两面和锁料孔内均有焊膏，将焊接好的铜片紧紧锁住， 既增加了焊料与铜片的接触面积，保证电连接的充分性和良好的散热效果， 同时保证了焊接后固化前铜片位置的稳定， 上下料和固化过程中不至引起铜片位置发生漂移， 保证了封装器件电、热参数的稳定性与一致性。
优选的，所述（c）焊接工序中采用的金属薄片为铜片，所述锁料孔为圆形。
优选的，所述金属薄片的形状为矩形，所述两个端部焊接位置分别设有一个锁料孔。
本发明的积极效果是：杜绝焊膏飞溅，既增加了焊料与铜片的接触面积，保证电连接的充分性和良好的散热效果， 又保证了焊接后固化前铜片位置的稳定，上下料和固化过程中不至引起铜片位置发生漂移，保证了封装器件电、热参数的稳定性与一致性。
附图说明
图1是本发明一种用于大电流电源模块键合的焊接工艺所应用产品的正视图；
图2是本发明一种用于大电流电源模块键合的焊接工艺所应用产品的俯视图；
图例说明：1—管脚，2—金属薄片，3—高温焊膏，4—芯片，5—软焊料，6—载片区，7—垂直高度，8—锁料孔。
具体实施方式
下面结合附图和具体实施例对本发明进行详细描述：
具体实施例一：
一种用于大电流电源模块键合的焊接工艺，所述一种用于大电流电源模块键合的焊接工艺包括：
（a）芯片4贴膜、划片：将原片切割成单个分离的芯片4，所用设备日本DISCO划片机；
（b）芯片4粘片：自动粘片机，芯片4和引线框架载片区6的通过软焊料5连接在一起，操作过程需有氮氢气体保护，避免高温下材料氧化；
（c）焊接:将厚度为0.35mm铜片即金属薄片2通过高温焊膏3与芯片4电极和管脚1连接再通过回流焊固化，采用设备台式回流焊炉，焊后芯片4上表面与金属薄片2上表面垂直高度7为0.5mm，焊膏须通过锁料孔8溢到铜片的上方形成蘑菇头状焊点；
（d）塑封、固化；
（e）激光打标；
（f）去溢胶、引脚镀锡；
（g）切筋、整形；
（h）测试、包装、入库；
具体实施例二：
一种用于大电流电源模块键合的焊接工艺，所述一种用于大电流电源模块键合的焊接工艺包括：
（a）芯片4贴膜、划片：将原片切割成单个分离的芯片4，所用设备日本DISCO划片机；
（b）芯片4粘片：自动粘片机，芯片4和引线框架载片区6的通过软焊料5连接在一起，操作过程需有氮氢气体保护，避免高温下材料氧化；
（c）焊接:将厚度为0.2mm矩形铜片即金属薄片2通过高温焊膏3与芯片4电极和管脚1连接再通过回流焊固化，采用设备台式回流焊炉，焊后芯片4上表面与金属薄片2上表面垂直高度7为0.35MM，焊膏须通过锁料孔8溢到铜片的上方形成蘑菇头状焊点；
（d）塑封、固化；
（e）激光打标；
（f）去溢胶、引脚镀锡；
（g）切筋、整形；
（h）测试、包装、入库；
上述实施例对本发明做了详细说明。当然，上述说明并非对本发明的限制，本发明也不仅限于上述例子，相关技术人员在本发明的实质范围内所作出的变化、改型、添加或减少、替换，也属于本发明的保护范围。

Claims (3)

1.一种用于大电流电源模块引线键合的锁料孔铜片焊接工艺，所述一种用于大电流电源模块键合的焊接工艺包括：
（a）芯片贴膜、划片；
（b）芯片粘片；
（c）焊接；
（d）塑封、固化；
（e）激光打标；
（f）去溢胶、引脚镀锡；
（g）切筋、整形；
（h）测试、包装、入库；
其特征在于，所述（c）焊接工序中采用金属薄片将芯片上的电极跟管脚连接起来，所述金属薄片两个端部焊接位置分别设有锁料孔。
2.根据权利要求1所述一种用于大电流电源模块引线键合的锁料孔铜片焊接工艺，其特征在于，所述（c）焊接工序中采用的金属薄片为铜片，所述锁料孔为圆形。
3.根据权利要求1至2之一所述一种用于大电流电源模块引线键合的锁料孔铜片焊接工艺，其特征在于，所述金属薄片的形状为矩形，所述两个端部焊接位置分别设有一个锁料孔。
CN201910498847.XA 2019-06-11 2019-06-11 一种用于大电流电源模块引线键合的锁料孔铜片焊接工艺 Pending CN110211887A (zh)

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CN115621236A (zh) * 2022-12-20 2023-01-17 广东芯聚能半导体有限公司 铜片连接结构、模块及连接方法

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CN101263597A (zh) * 2005-09-13 2008-09-10 万国半导体股份有限公司 具有薄板内联机的半导体封装
CN101595560A (zh) * 2007-01-24 2009-12-02 费查尔德半导体有限公司 预模制夹头结构
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CN104103617A (zh) * 2013-04-02 2014-10-15 英飞凌科技奥地利有限公司 多层半导体封装
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115621236A (zh) * 2022-12-20 2023-01-17 广东芯聚能半导体有限公司 铜片连接结构、模块及连接方法

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