CN110184563A - 半导体表面镀镍膜的方法 - Google Patents
半导体表面镀镍膜的方法 Download PDFInfo
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
本发明的半导体表面镀镍膜的方法,包括以下步骤:采用清洗剂对半导体的表面进行预清洗;采用离子束刻蚀对半导体的表面进行清洗;以及在半导体的表面上进行真空溅射沉积形成镍层。本发明在镍膜的形成过程中半导体晶片不会受到外力作用而发生破裂,从而提高半导体产品的成品率。
Description
技术领域
本发明涉及半导体焊接领域,尤其涉及一种半导体表面镀镍膜的方法。
背景技术
半导体的加工过程中,金属焊接是重要的工序。传统的金线焊接方式精度低,难以操作,成本高,且焊接不稳定,因而,业内多采用锡线焊接来取代金线的焊接方法,此方法需要锡和半导体之间能够很好的结合。
通常需要预先在半导体材料表面喷涂镍再电镀镍锡。喷涂的镍层与半导体的结合力很强,电镀的镍锡层与喷涂的镍层结合力也很强,电镀的镍锡层又极易焊锡,因此通过喷涂电镀工序保证了焊接的可靠性。但如果半导体厚度在1mm以下,该半导体进行电镀镍锡前的喷镍工序时,在高温高压的镍流作用下半导体极易发生碎裂。
因此,亟待提供一种改进的半导体表面镀镍膜的方法以克服以上缺陷。
发明内容
本发明的一个目的在于提供一种半导体表面镀镍膜的方法,本发明在镍膜的形成过程中半导体晶片不会受到外力作用而发生破裂,从而提高半导体产品的成品率。
为实现上述目的,本发明的导体表面镀镍膜的方法,包括以下步骤:
采用清洗剂对半导体的表面进行预清洗;
采用离子束刻蚀对半导体的表面进行清洗;以及
在半导体的表面上进行真空溅射沉积形成镍层。
与现有方法相比,本发明通过采用清洗剂先对半导体的表面进行预清洗,继而采用离子束刻蚀对半导体的表面进行高效清洗,最后通过真空溅射沉积方法在半导体表面上形成镍层,该种方法形成的镍层与半导体的金属表面之间的结合力良好,而且在镍层形成过程中晶片不会受到外力作用而发生破裂,因此半导体的成品率得到提高。
较佳地,采用清洗剂对半导体的表面进行预清洗的步骤包括:所述半导体浸泡在清洗剂中并采用超声波震动清洗,继而对所述半导体进行干燥。
较佳地,所述清洗剂为氮甲基吡咯烷酮和异丙醇。
较佳地,采用离子束刻蚀对半导体的表面进行清洗的步骤包括:采用氩离子束刻蚀所述半导体的表面,氩离子束的入射角度为30°,刻蚀速率为
较佳地,在半导体的表面上进行真空溅射沉积形成镍层的步骤包括:在真空腔内通入氩气,离子轰击电流为10-20A,在所述半导体上沉积所述镍层。
较佳地,采用磁控溅射沉积形成所述镍层。
具体实施方式
下面结合实施例对本发明的半导体表面镀镍膜的方法作进一步说明,但不因此限制本发明。
在一个实施例中,该半导体表面镀镍膜的方法包括以下步骤:
采用清洗剂对半导体的表面进行预清洗;
采用离子束刻蚀对半导体的表面进行清洗;以及
在半导体的表面上进行真空溅射沉积形成镍层。
本发明通过采用清洗剂先对半导体的表面进行预清洗,继而采用离子束刻蚀对半导体的表面进行高效清洗,最后通过真空溅射沉积方法在半导体表面上形成镍层,该种方法形成的镍层与半导体的金属表面之间的结合力良好,而且在镍层形成过程中晶片不会受到外力作用而发生破裂,因此半导体的成品率得到提高。
具体地,在预清洗步骤中,采用金属清洗剂对半导体进行超声波清洗,例如,采用氮甲基吡咯烷酮和异丙醇,清洗时间为20-30分钟,结合超声波震动清洗,可将半导体表面的油污和碎屑清洗干净。超声波清洗完可通过烘干或自然干燥使半导体干燥。
继而,在离子束刻蚀步骤中,在氩气气氛下,利用产生的等离子体刻半导体基材表面以达到清洗的目的。其中,氩离子束的入射角度为30°,衬底的转速为20r/s,刻蚀速率约为通过离子轰击的清洗步骤,可使得半导体的表面得到高效清洗,为后续的镍层的沉积做准备。
具体地,在真空镀镍的步骤中,将真空腔内的真空度调节为5×10-2-5×10-3Pa,通入氩气,离子轰击电流为10-20A。在本实施例中,采用磁控溅射沉积(Magnetron SputterDeposition)镍层。具体地,靶材为高纯度镍,镀锡功率为6.5-8.0kW,时间为60分钟,离子轰击电流为18-20A,镍层的厚度为5-10埃。较佳地,为使产生的镍离子束稳定,在衬底沉积镍层之前,要溅射镍靶100s左右。当然,在其他实施例中,也可采用其他溅射方法进行。
以上所揭露的仅为本发明的较佳实施例而已,当然不能以此来限定本发明之权利范围,因此依本发明申请专利范围所作的等同变化,仍属本发明所涵盖的范围。
Claims (6)
1.一种半导体表面镀镍膜的方法,其特征在于,包括以下步骤:
采用清洗剂对半导体的表面进行预清洗;
采用离子束刻蚀对半导体的表面进行清洗;以及
在半导体的表面上进行真空溅射沉积形成镍层。
2.如权利要求1所述的半导体表面镀镍膜的方法,其特征在于:采用清洗剂对半导体的表面进行预清洗的步骤包括:所述半导体浸泡在清洗剂中并采用超声波震动清洗,继而对所述半导体进行干燥。
3.如权利要求1所述的半导体表面镀镍膜的方法,其特征在于:所述清洗剂为氮甲基吡咯烷酮和异丙醇。
4.如权利要求1所述的半导体表面镀镍膜的方法,其特征在于:采用离子束刻蚀对半导体的表面进行清洗的步骤包括:采用氩离子束刻蚀所述半导体的表面,氩离子束的入射角度为30°,刻蚀速率为
5.如权利要求1所述的半导体表面镀镍膜的方法,其特征在于:在半导体的表面上进行真空溅射沉积形成镍层的步骤包括:在真空腔内通入氩气,离子轰击电流为10-20A,在所述半导体上沉积所述镍层。
6.如权利要求5所述的半导体表面镀镍膜的方法,其特征在于:采用磁控溅射沉积形成所述镍层。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111203606A (zh) * | 2020-03-18 | 2020-05-29 | 宁波江丰电子材料股份有限公司 | 一种金属靶材真空磁控溅射镀镍及焊接方法 |
CN113199106A (zh) * | 2021-05-24 | 2021-08-03 | 宁波江丰电子材料股份有限公司 | 一种半导体用硅靶材的制作方法 |
CN113290293A (zh) * | 2021-05-25 | 2021-08-24 | 宁波江丰电子材料股份有限公司 | 一种提高含钨靶材焊接结合率的方法 |
CN114059026A (zh) * | 2020-08-03 | 2022-02-18 | 东莞新科技术研究开发有限公司 | 一种半导体表面处理方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN205662592U (zh) * | 2016-05-04 | 2016-10-26 | 河南鸿昌电子有限公司 | 等离子溅射致冷件晶板镀膜装置 |
CN106048543A (zh) * | 2016-06-02 | 2016-10-26 | 泉州市依科达半导体致冷科技有限公司 | 半导体晶片表面真空镀膜工艺 |
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- 2018-02-23 CN CN201810155593.7A patent/CN110184563A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN205662592U (zh) * | 2016-05-04 | 2016-10-26 | 河南鸿昌电子有限公司 | 等离子溅射致冷件晶板镀膜装置 |
CN106048543A (zh) * | 2016-06-02 | 2016-10-26 | 泉州市依科达半导体致冷科技有限公司 | 半导体晶片表面真空镀膜工艺 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111203606A (zh) * | 2020-03-18 | 2020-05-29 | 宁波江丰电子材料股份有限公司 | 一种金属靶材真空磁控溅射镀镍及焊接方法 |
CN114059026A (zh) * | 2020-08-03 | 2022-02-18 | 东莞新科技术研究开发有限公司 | 一种半导体表面处理方法 |
CN113199106A (zh) * | 2021-05-24 | 2021-08-03 | 宁波江丰电子材料股份有限公司 | 一种半导体用硅靶材的制作方法 |
CN113290293A (zh) * | 2021-05-25 | 2021-08-24 | 宁波江丰电子材料股份有限公司 | 一种提高含钨靶材焊接结合率的方法 |
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