CN110176526B - White light LED structure with extremely high barrier layer insertion layer - Google Patents
White light LED structure with extremely high barrier layer insertion layer Download PDFInfo
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- 239000013256 coordination polymer Substances 0.000 description 4
- UOSXPFXWANTMIZ-UHFFFAOYSA-N cyclopenta-1,3-diene;magnesium Chemical compound [Mg].C1C=CC=C1.C1C=CC=C1 UOSXPFXWANTMIZ-UHFFFAOYSA-N 0.000 description 4
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Abstract
The invention improves the white light LED structure with the extremely high barrier layer insertion layer, and the white light LED structure with the extremely high barrier layer insertion layer enables the white light LED structure to simultaneously excite blue light and yellow light by generating the dual-band MQW layer on the substrate, the blue light and the yellow light are mixed to generate white light, and the extremely high barrier layer insertion layer is inserted into the blue light band MQW layer (two sides or one side of a trap), so that the problem that a blue light spectrum cannot be excited due to the problem of energy bands of a blue light emitting region can be avoided, and the white light LED with high luminous efficiency, good stability and uniform chromaticity can be successfully grown. Compared with the existing white light LED technology, the fluorescent powder is not used, so that the packaging process can be reduced, and the stability problem caused by aging of the fluorescent powder can be reduced.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a white light LED structure with an extremely high barrier layer insertion layer.
Background
The wavelength range of the visible light spectrum is 380nm-760nm, and the visible light spectrum is seven-color light which can be perceived by human eyes, namely red, orange, yellow, green, cyan, blue and purple, but the seven-color light is one monochromatic light, and the white light is not the monochromatic light, so that the visible light spectrum has no white light, and is composite light synthesized by a plurality of monochromatic lights.
Then, to make an LED emit white light, its spectral characteristics should include the entire visible spectral range. According to studies on visible light, white light visible to the human eye requires at least a mixture of two light modes, i.e., two-wavelength emission (blue light + yellow light) or three-wavelength emission (blue light + green light + red light).
For general illumination, in terms of a process structure, a white light LED is usually formed by two methods, wherein the first method is to form white light by matching a blue light technology with fluorescent powder; the second is a multiple monochromatic light mixing method. Both of these methods have been successful in producing an exposure device. In the white light system generated by the first method, when the fluorescent powder is excited by blue light, yellow light is emitted, and the blue light and the yellow light are mixed to form white light. The second method employs chips of different colors packaged together, and white light is generated by mixing the colors.
Among them, the first method is the most commonly used method for the phosphor-converted white LED, but the light efficiency loss due to the down conversion of white light is 10% -30%, and there are problems of stability of phosphor aging and packaging cost, and dependence on GaN-based LEDs. The second method has complex production procedures and high production cost.
Therefore, how to provide a high-efficiency and low-cost white LED is a problem to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, the present invention provides a white LED structure with an extremely high barrier layer interposed layer, which has the following technical scheme:
a white LED structure with an extremely high barrier layer insertion layer, the white LED structure comprising:
a substrate;
the N-type layer, the dual-band MQW layer and the P-type layer are sequentially arranged on the substrate;
wherein the dual-band MQW layer comprises: at least one yellow light wave band MQW layer which is arranged adjacent to the substrate in a stacking way, and at least one blue light wave band MQW layer which is arranged adjacent to the P-type layer in a stacking way;
the blue light wave band MQW layer comprises a third functional layer and a fourth functional layer which are sequentially arranged in the first direction, and the first direction is perpendicular to the substrate and is directed to the P-type layer by the substrate;
and an extremely high barrier layer insertion layer is sequentially overlapped with the fourth functional layer.
Preferably, in the white LED structure, the substrate is ternary In x Ga (1-x) N substrate, wherein 0.05 < x < 0.4, inclusive.
Preferably, in the above white LED structure, the N-type layer is In x Ga (1-x) N layers, wherein 0.05 < x < 0.4, inclusive;
the doping elements of the N-type layer are Si and In, wherein the doping concentration of Si is 2 multiplied by 10 18 /cm 3 -9×10 18 /cm 3 Including endpoint values;
the thickness of the N-type layer is 0.2-1 μm, inclusive.
Preferably, in the above white LED structure, the number of layers of the dual-band MQW layer is 2-8, including the end point value;
the number of the yellow light wave band MQW layers is 1-7, and the end point values are included;
the number of the blue light wave band MQW layers is 1-7; including the endpoint values.
Preferably, in the above white LED structure, the first functional layer is In x Ga (1-x) N layers, wherein 0.2 < x < 0.4, inclusive;
the thickness of the first functional layer is 3nm-10nm, including the end point value.
Preferably, in the above white LED structure, the second functional layer is In y Ga (1-y) N layers, wherein 0.05 < y < 0.4, inclusive;
the thickness of the second functional layer is 5nm-15nm, including the end point value.
Preferably, in the above white LED structure, the third functional layer is In x Ga (1-x) An N layer, wherein 0.10 < x < 0.3, inclusive;
the thickness of the third functional layer is 3nm-10nm, including the end point value.
Preferably, in the above white LED structure, the fourth functional layer is In y Ga (1-y) N layers, wherein 0.05 < y < 0.4, inclusive;
the thickness of the fourth functional layer is 5nm-15nm, including the end point value.
Preferably, in the above white LED structure, the number of the extremely high barrier layer insertion layers is 1-5, including the end point value;
the thickness of the extremely high barrier layer insertion layer is 0.5nm-2nm, including the end point value;
the extremely high barrier layer insertion layer is an AlGaN extremely high barrier layer insertion layer or an AlInGaN extremely high barrier layer insertion layer or an AlN extremely high barrier layer insertion layer, wherein the Al component is 0.005-0.04, and the in component is 0.05-0.4.
Preferably, in the above white LED structure, the P-type layer is In x Ga (1-x) N layers, wherein 0.05 < x < 0.4, inclusive;
the doping elements of the P-type layer are Mg and In, wherein the doping concentration of Si is 1 multiplied by 10 18 /cm 3 -8×10 18 /cm 3 Including endpoint values;
the thickness of the P-type layer is 0.2 μm to 1 μm, inclusive.
Compared with the prior art, the invention has the following beneficial effects:
according to the white light LED structure with the extremely high barrier layer insertion layer, the dual-band MQW layer is generated on the substrate, so that the white light LED structure simultaneously excites blue light and yellow light, the blue light and the yellow light are mixed to generate white light, and the extremely high barrier layer insertion layer is inserted into the blue light band MQW layer (on two sides or one side of a trap), so that the problem that a blue light spectrum cannot be excited due to the problem of an energy band of a blue light emitting area can be avoided, and a white light LED with high luminous efficiency, good stability and uniform chromaticity can be successfully grown.
Compared with the existing white light LED technology, the fluorescent powder is not used, so that the packaging process can be reduced, and the stability problem caused by aging of the fluorescent powder can be reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a white LED structure with an extremely high barrier layer insertion layer according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another white light LED structure with an extremely high barrier layer insert layer according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a white light LED structure with an extremely high barrier layer insert layer according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a white light LED structure with an extremely high barrier layer insert layer according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of another white LED structure with an extremely high barrier layer insertion layer according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a white LED structure with an extremely high barrier layer insertion layer according to an embodiment of the present invention, where the white LED structure includes:
a substrate 11;
an N-type layer 12, a dual-band MQW layer 13, and a P-type layer 14 sequentially disposed on the substrate 11;
wherein the dual-band MQW layer 13 comprises: at least one yellow light band MQW layer 15 disposed adjacent to the substrate 11 in a sequential stack, and at least one blue light band MQW layer 16 disposed adjacent to the P-type layer 14 in a sequential stack;
the yellow light wave band MQW layer 15 comprises a first functional layer 17 and a second functional layer 18 which are sequentially arranged in a first direction, the blue light wave band MQW layer 16 comprises a third functional layer 19 and a fourth functional layer 20 which are sequentially arranged in the first direction, and the first direction is perpendicular to the substrate 11 and is directed to the P-type layer 14 by the substrate 11;
and a very high barrier layer insertion layer 21 is sequentially overlapped with the fourth functional layer 20.
In this embodiment, the white LED structure with the extremely high barrier layer insertion layer is formed by forming the dual-band MQW layer 13 on the substrate 11, so that the white LED structure simultaneously excites blue light and yellow light, which are mixed to generate white light, and the extremely high barrier layer insertion layer 21 is inserted into the blue band MQW layer 16 (on both sides or one side of the well), so that the problem that the blue light spectrum cannot be excited due to the problem of the blue light emitting region energy band can be avoided, and the white LED with high luminous efficiency, good stability and uniform chromaticity can be successfully grown.
Compared with the existing white light LED technology, the fluorescent powder is not used, so that the packaging process can be reduced, and the stability problem caused by aging of the fluorescent powder can be reduced.
Further, according to the above embodiment of the present invention, the substrate 11 includes, but is not limited to, ternary In x Ga (1-x) N substrate, wherein 0.05 < x < 0.4, inclusive.
Further, according to the above embodiment of the present invention, the N-type layer 12 is In x Ga (1-x) N layers, wherein 0.05 < x < 0.4, inclusive;
the doping elements of the N-type layer 12 are Si and In, wherein the doping concentration of Si is 2×10 18 /cm 3 -9×10 18 /cm 3 Including endpoint values;
the thickness of the N-type layer 12 is 0.2 μm to 1 μm, inclusive.
The concentration of In the N-type layer 12 is equal to the ternary In x Ga (1-x) The In concentration In the N substrate is the same.
Further, according to the above embodiment of the present invention, the number of layers of the dual-band MQW layer 13 is 2-8, including the end point values;
the number of layers of the yellow light wave band MQW layer 15 is 1-7, and the end point value is included;
the number of layers of the blue light wave band MQW layer 16 is 1-7. Including the endpoint values.
In this embodiment, for example, the number of layers of the yellow light band MQW layer 15 is 1, and the number of layers of the blue light band MQW layer 16 is 3.
Further, according to the above embodiment of the present invention, the first functional layer 17 is In x Ga (1-x) N layers, wherein 0.2 < x < 0.4, inclusive;
the thickness of the first functional layer 17 is 3nm to 10nm, inclusive.
In this embodiment, the thickness of the first functional layer 17 is 5nm or 7nm or 9nm.
Further, according to the above embodiment of the present invention, the second functional layer 18 is In y Ga (1-y) N layers, wherein 0.05 < y < 0.4, inclusive;
the thickness of the second functional layer 18 is 5nm to 15nm, inclusive.
In this embodiment, the composition of In the second functional layer 18 is the same as that In the substrate, and the thickness of the second functional layer 18 is 8nm or 10nm or 12nm.
The second functional layer 18 may or may not be doped with Si, and when Si is doped, the doping concentration of Si is 2×10 18 /cm 3 -9×10 18 /cm 3 Including endpoint values.
Further, according to the above embodiment of the present invention, the third functional layer 19 is In x Ga (1-x) An N layer, wherein 0.10 < x < 0.3, inclusive;
the thickness of the third functional layer 19 is 3nm to 10nm, inclusive.
In this embodiment, the thickness of the third functional layer 19 is 5nm or 7nm or 9nm.
Further, according to the above embodiment of the present invention, the fourth functional layer 20 is In y Ga (1-y) N layers, wherein 0.05 < y < 0.4, inclusive;
the thickness of the fourth functional layer 20 is 5nm to 15nm, inclusive.
In this embodiment, the composition of In the fourth functional layer 20 is the same as that In the substrate, and the thickness of the fourth functional layer 20 is 8nm or 10nm or 12nm.
The fourth functional layer 20 may or may not be doped with Si, and when Si is doped, the doping concentration of Si is 2×10 18 /cm 3 -9×10 18 /cm 3 Including endpoint values.
Further, according to the above embodiment of the present invention, the number of layers of the extremely high barrier layer insertion layer 21 is 1-5, including the end point value;
the thickness of the extremely high barrier layer insertion layer 21 is 0.5nm to 2nm, including the end point value;
the extremely high barrier layer insertion layer 21 is an AlGaN extremely high barrier layer insertion layer or an AlInGaN extremely high barrier layer insertion layer or an AlN extremely high barrier layer insertion layer or an N-AlGaN extremely high barrier layer insertion layer, wherein the Al component is 0.005-0.04, and the in component is 0.05-0.4.
In this embodiment, the composition of In the extremely high barrier layer insertion layer 21 is the same as that In the substrate, and the thickness of the extremely high barrier layer insertion layer 21 is 0.7nm or 1nm or 1.3nm.
Further, according to the above embodiment of the present invention, the P-type layer 14 is In x Ga (1-x) N layers, wherein 0.05 < x < 0.4, inclusive;
the doping elements of the P-type layer 14 are Mg and In, wherein the doping concentration of Si is 1×10 18 /cm 3 -8×10 18 /cm 3 Including endpoint values;
the thickness of the P-type layer 14 is 0.2 μm to 1 μm, inclusive.
In this embodiment, the composition of In the P-type layer 14 is the same as that of In the substrate 11, and the thickness of the P-type layer 14 is 0.4 μm or 0.6 μm or 0.8 μm.
Based on all the above embodiments of the present invention, the following description will take specific embodiments as examples.
Example 1
Referring to fig. 2, fig. 2 is a schematic structural diagram of another white LED structure with an extremely high barrier layer interposed layer according to an embodiment of the present invention.
Step 1: adopting equipment MOCVD, using trimethyl gallium TMGa, triethyl gallium TEGa and ammonia gas NH 3 Is Ga source, N 2 The N-type and P-type doping sources are respectively silane SiH 4 And a magnesium-dicyclopentadiene CP 2 Mg, an InGaN ternary substrate was used, and the In composition was 0.1.
Step 2: inGaN substrate 11 is put into MOCVD reaction chamber, and TMGa, TMIn, SIH is introduced 4 、NH 3 Growing N-type layer 12 with Si concentration of 6X10 18 /cm 3 The In component is 0.1; the thickness is 0.5 μm.
Step 3: into TEGa, TMIn, NH 3 The first functional layer 17 was grown to a thickness of 4nm with an in composition of 0.35.
Step 4: into TEGa, TMIn, NH 3 Growing a second functional layer 18, thickness 6nm, in composition 0.1, siH 4 Is 5×10 in concentration 18 /cm 3 。
Step 5: into TEGa, TMIn, NH 3 The third functional layer 19 was grown to a thickness of 4nm with an in composition of 0.2.
Step 6: into TEGa, TMIn, NH 3 、SIH 4 Growing a fourth functional layer 20 with a thickness of 2nm, an in composition of 0.1, siH 4 Is 5×10 in concentration 18 /cm 3 。
Step 7: into TEGa, TMIn, NH 3 TMAL grows an extremely high barrier interlayer AlInGaN structure 21 with a thickness of 1nm and an Al composition of 0.1.
Step 8: and (5) repeating the step 6 and the step 7.
Step 9: into TEGa, TMIn, NH 3 The third functional layer 19 was grown to a thickness of 4nm with an in composition of 0.2.
Step 10: into TEGa, TMIn, NH 3 、SIH 4 Growing a fourth functional layer 20 with a thickness of 2nm, an in composition of 0.1, siH 4 Is 5×10 in concentration 18 /cm 3 。
Step 11: into TEGa, TMIn, NH 3 TMAL grows an extremely high barrier interlayer AlInGaN structure 21 with a thickness of 1nm and an Al composition of 0.1.
Step 12: steps 10 and 11 are repeated.
Step 13: into TEGa, TMIn, NH 3 TMAL grows the current blocking layer 22, thickness is 0.02nm, al composition is 0.3.
Step 14: into TEGa, TMIn, NH 3 The Mg grows a P-type layer 14 with a structure of P-InGaN and a concentration of Mg of 5×10 18 /cm 3 In concentration was 0.1 and thickness was 0.6. Mu.m.
Example two
Referring to fig. 3, fig. 3 is a schematic structural diagram of another white LED structure with an extremely high barrier layer interposed layer according to an embodiment of the present invention.
Step 1: adopting equipment MOCVD, using trimethyl gallium TMGa, triethyl gallium TEGa and ammonia gas NH 3 Is Ga source, N 2 The N-type and P-type doping sources are respectively silane SiH 4 And a magnesium-dicyclopentadiene CP 2 Mg, an InGaN ternary substrate was used, and the In composition was 0.1.
Step 2: placing InGaN substrate 11 into MOCVD reaction chamber, introducing TMGa, TMIn, SIH, NH 3 Growing N-type layer 12 with Si concentration of 6X10 18 /cm 3 The In component is 0.1; the thickness is 0.5 μm.
Step 3: into TEGa, TMIn, NH 3 The first functional layer 17 was grown to a thickness of 4nm with an in composition of 0.35.
Step 4: into TEGa, TMIn, NH 3 Growing a second functional layer 18, thickness 6nm, in composition 0.1, siH 4 Is 5×10 in concentration 18 /cm 3 。
Step 5: into TEGa, TMIn, NH 3 The third functional layer 19 was grown to a thickness of 4nm with an in composition of 0.2.
Step 6: into TEGa, TMIn, NH 3 、SIH 4 Growing a fourth functional layer 20 with a thickness of 2nm, an in composition of 0.1, siH 4 Is 5×10 in concentration 18 /cm 3 。
Step 7: into TEGa, TMIn, NH 3 TMAL grows to a very high barrier layer intercalated AlN structure 21 with a thickness of 1nm and an Al composition of 0.1.
Step 8: and (5) repeating the step 6 and the step 7.
Step 9: into TEGa, TMIn, NH 3 The third functional layer 19 was grown to a thickness of 4nm with an in composition of 0.2.
Step 10: into TEGa, TMIn, NH 3 、SIH 4 Growing a fourth functional layer 20 with a thickness of 2nm, an in composition of 0.1, siH 4 Is 5×10 in concentration 18 /cm 3 。
Step 11: into TEGa, TMIn, NH 3 TMAL grows a very high barrier intercalating layer AlN structure 21 of 1nm, thickness 1nm, al composition 0.1.
Step 12: steps 10 and 11 are repeated.
Step 13: TEGa, TMIn, NH3 and TMAL are introduced to grow the current blocking layer 22, the thickness is 0.02nm, and the Al component is 0.3.
Step 14: into TEGa, TMIn, NH 3 The Mg grows a P-type layer 14 with a structure of P-InGaN and a concentration of Mg of 5×10 18 /cm 3 In concentration was 0.1 and thickness was 0.6. Mu.m.
As can be seen from a comparison between the first embodiment and the second embodiment, the very high barrier layer is different from the first embodiment, but the purpose is to increase the well barrier energy level difference of the blue light by doping Al at the blue light barrier, so as to increase the confinement effect of the carrier and increase the light emission probability of the blue light.
Example III
Referring to fig. 4, fig. 4 is a schematic structural diagram of another white LED structure with an extremely high barrier layer interposed layer according to an embodiment of the present invention.
Step 1: the equipment MOCVD is adopted, so that the equipment MOCVD is adopted,by trimethyl gallium TMGa, triethyl gallium TEGa and ammonia NH 3 Is Ga source, N 2 The N-type and P-type doping sources are respectively silane SiH 4 And a magnesium-dicyclopentadiene CP 2 Mg, an InGaN ternary substrate was used, and the In composition was 0.1.
Step 2: inGaN substrate 11 is put into MOCVD reaction chamber, and TMGa, TMIn, SIH is introduced 4 、NH 3 Growing N-type layer 12 with Si concentration of 6X10 18 /cm 3 The In component is 0.1; the thickness is 0.5 μm.
Step 3: into TEGa, TMIn, NH 3 The first functional layer 17 was grown to a thickness of 4nm with an in composition of 0.35.
Step 4: into TEGa, TMIn, NH 3 Growing a second functional layer 18, thickness 6nm, in composition 0.1, siH 4 Is 5×10 in concentration 18 /cm 3 。
Step 5: into TEGa, TMIn, NH 3 The third functional layer 19 was grown to a thickness of 4nm with an in composition of 0.2.
Step 6: into TEGa, TMIn, NH 3 TMAL grows an extremely high barrier interlayer AlInGaN structure 21 with a thickness of 8nm and an Al composition of 0.1.
Step 7: into TEGa, TMIn, NH 3 The third functional layer 19 was grown to a thickness of 4nm with an in composition of 0.2.
Step 8: into TEGa, TMIn, NH 3 TMAL grows an extremely high barrier interlayer AlInGaN structure 21 with a thickness of 8nm and an Al composition of 0.1.
Step 9: into TEGa, TMIn, NH 3 TMAL grows the current blocking layer 22, thickness is 0.02nm, al composition is 0.3.
Step 10: into TEGa, TMIn, NH 3 The Mg grows a P-type layer 14 with a structure of P-InGaN and a concentration of Mg of 5×10 18 /cm 3 In concentration was 0.1 and thickness was 0.6. Mu.m.
As is clear from the comparison between the third embodiment and the first embodiment, the thickness of the very high barrier layer insertion layer is different, and the very high barrier layer insertion layer in the third embodiment is thicker, which can play a role in improving the blue light emission probability, but may cause a voltage bias and an electrical deviation due to the thicker very high barrier layer insertion layer.
Example IV
Referring to fig. 5, fig. 5 is a schematic structural diagram of another white LED structure with an extremely high barrier layer interposed layer according to an embodiment of the present invention.
Step 1: adopting equipment MOCVD, using trimethyl gallium TMGa, triethyl gallium TEGa and ammonia gas NH 3 Is Ga source, N 2 The N-type and P-type doping sources are respectively silane SiH 4 And a magnesium-dicyclopentadiene CP 2 Mg, an InGaN ternary substrate was used, and the In composition was 0.1.
Step 2: inGaN substrate 11 is put into MOCVD reaction chamber, and TMGa, TMIn, SIH is introduced 4 、NH 3 Growing N-type layer 12 with Si concentration of 6X10 18 /cm 3 The In component is 0.1; the thickness is 0.5 μm.
Step 3: into TEGa, TMIn, NH 3 The first functional layer 17 was grown to a thickness of 4nm with an in composition of 0.35.
Step 4: into TEGa, TMIn, NH 3 、SIH 4 Growing a second functional layer 18 with a thickness of 2nm, an in composition of 0.1, siH 4 Is 5×10 in concentration 18 /cm 3 。
Step 5: into TEGa, TMIn, NH 3 The third functional layer 19 was grown to a thickness of 4nm with an in composition of 0.2.
Step 6: into TEGa, TMIn, NH 3 Growing a fourth functional layer 20 with a thickness of 6nm, an in composition of 0.1, siH 4 Is 5×10 in concentration 18 /cm 3 。
Step 7: and (5) repeating the step 5 and the step 6.
Step 8: into TEGa, TMIn, NH 3 TMAL grows the current blocking layer 22, thickness is 0.02nm, al composition is 0.3.
Step 9: into TEGa, TMIn, NH 3 The Mg grows a P-type layer 14 with a structure of P-InGaN and a concentration of Mg of 5×10 18 /cm 3 In concentration was 0.1 and thickness was 0.6. Mu.m.
As can be seen from a comparison between the third embodiment and the first embodiment, in the fourth embodiment, the blue light band MQW layer has no very high barrier layer interposed layer, and the blue light cannot be excited, so that no white light is generated; nanowires of the yellow-light band MQW may be omitted because the In composition of the yellow-light band MQW is sufficiently large and the energy level difference is sufficient.
As can be seen from the above description, the present invention adopts the method for producing the white light LED by mixing the blue light wave band and the yellow light wave band, and has a considerable effect compared with the existing method for producing the white light by exciting the fluorescent powder and mixing the multicolor LED chips.
The structure is characterized in that a dual-band LED is grown on a substrate of a ternary InGaN, the stress of the dual-band InGaN/InGaN MQW structure on the ternary substrate can be reduced to 75% of that of a traditional structure, and the piezoelectric polarization effect and the built-in electric field are weakened due to the obvious reduction of the stress, so that the separation effect of space charges is restrained, and the luminous efficiency is improved.
However, the In component of the yellow light wave band MQW is higher, so that the energy level difference of the well barrier is larger, more carriers can be limited, the energy level difference of the blue light well barrier is smaller, the capacity of limiting the carriers is smaller, and almost no carriers exist, so that blue light is not easy to excite, and white light cannot be generated.
Therefore, the invention provides a structure of an extremely high barrier layer insertion layer, which grows on two sides or one side of at least the last blue light trap close to a P-type layer, and aims to shorten the distance of holes migrating to the blue light trap, improve the energy level difference of a conduction band trap from the angle of energy band, effectively control the carrier migration rate, and limit the carrier migration rate in the blue light trap, so that blue light is emitted in a composite mode. This very high barrier interlayer is a key factor in generating white light.
The above description of the white LED structure with the very high barrier layer interposed layer provided by the present invention has been made in detail, and specific examples are applied herein to illustrate the principles and embodiments of the present invention, the above examples are only for helping to understand the method and core ideas of the present invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include, or is intended to include, elements inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A white LED structure with an extremely high barrier layer insertion layer, the white LED structure comprising:
a substrate;
the N-type layer, the dual-band MQW layer and the P-type layer are sequentially arranged on the substrate;
wherein the dual-band MQW layer comprises: at least one yellow light wave band MQW layer which is arranged adjacent to the substrate in a stacking way, and at least one blue light wave band MQW layer which is arranged adjacent to the P-type layer in a stacking way;
the blue light wave band MQW layer comprises a third functional layer and a fourth functional layer which are sequentially arranged in the first direction, and the first direction is perpendicular to the substrate and is directed to the P-type layer by the substrate;
an extremely high barrier layer insertion layer is sequentially overlapped with the fourth functional layer;
wherein the third functional layer is In x Ga (1-x) An N layer, wherein 0.10 < x < 0.3, inclusive; the thickness of the third functional layer is 3nm-10nm, including the end point value;
the fourth functional layer is In y Ga (1-y) N layers, wherein 0.05 < y < 0.4, inclusive; the thickness of the fourth functional layer is 5nm-15nm, including the end point value;
the number of the extremely high barrier layer insertion layers is 1-5, including the endpoint value; the thickness of the extremely high barrier layer insertion layer is 0.5nm-2nm, including the end point value; the extremely high barrier layer insertion layer is an AlInGaN extremely high barrier layer insertion layer, wherein the Al component is 0.005-0.04, and the in component is 0.05-0.4.
2. The white LED structure of claim 1, wherein the substrate is ternary In x Ga (1-x) N substrate, wherein 0.05 < x < 0.4, inclusive.
3. The white LED structure of claim 1, wherein the N-type layer is In x Ga (1-x) N layers, wherein 0.05 < x < 0.4, inclusive;
the doping elements of the N-type layer are Si and In, wherein the doping concentration of Si is 2 multiplied by 10 18 /cm 3 -9×10 18 /cm 3 Including endpoint values;
the thickness of the N-type layer is 0.2-1 μm, inclusive.
4. The white LED structure of claim 1, wherein the number of dual-band MQW layers is 2-8, inclusive;
the number of the yellow light wave band MQW layers is 1-7, and the end point values are included;
the number of the blue light wave band MQW layers is 1-7; including the endpoint values.
5. The white LED structure of claim 1, wherein the first functional layer is In x Ga (1-x) N layers, wherein 0.2 < x < 0.4, inclusive;
the thickness of the first functional layer is 3nm-10nm, including the end point value.
6. The white LED structure of claim 1, wherein the second functional layer is In y Ga (1-y) N layers, wherein 0.05 < y < 0.4, inclusive;
the thickness of the second functional layer is 5nm-15nm, including the end point value.
7. The white LED structure of claim 1, wherein the P-type layer is In x Ga (1-x) N layers, wherein 0.05 < x < 0.4, inclusive;
the doping elements of the P-type layer are Mg and In, wherein the doping concentration of Si is 1 multiplied by 10 18 /cm 3 -8×10 18 /cm 3 Including endpoint values;
the thickness of the P-type layer is 0.2 μm to 1 μm, inclusive.
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