CN110176526B - A white LED structure with extremely high barrier layer insertion layers - Google Patents

Abstract

The invention improves the white light LED structure with the extremely high barrier layer insertion layer, and the white light LED structure with the extremely high barrier layer insertion layer enables the white light LED structure to simultaneously excite blue light and yellow light by generating the dual-band MQW layer on the substrate, the blue light and the yellow light are mixed to generate white light, and the extremely high barrier layer insertion layer is inserted into the blue light band MQW layer (two sides or one side of a trap), so that the problem that a blue light spectrum cannot be excited due to the problem of energy bands of a blue light emitting region can be avoided, and the white light LED with high luminous efficiency, good stability and uniform chromaticity can be successfully grown. Compared with the existing white light LED technology, the fluorescent powder is not used, so that the packaging process can be reduced, and the stability problem caused by aging of the fluorescent powder can be reduced.

Description

A white LED structure with extremely high barrier layer insertion layers

Technical field

The present invention relates to the field of LED technology, and more specifically, to a white light LED structure with an extremely high barrier layer insertion layer.

Background technique

The wavelength range of the visible light spectrum is 380nm-760nm. It is seven colors of light that can be felt by the human eye, namely red, orange, yellow, green, cyan, blue, and violet. However, the seven colors of light are all monochromatic light. Since white light It is not monochromatic light, so there is no white light in the spectrum of visible light. It is a composite light synthesized from multiple monochromatic lights.

Then, for an LED to emit white light, its spectral characteristics should include the entire visible spectral range. According to the research on visible light, the white light that the human eye can see requires the mixing of at least two kinds of light, that is, a two-wavelength light emission (blue light + yellow light) or a three-wavelength light emission (blue light + green light + red light) mode.

For general lighting, in terms of process structure, white LEDs are usually formed using two methods. The first is to use "blue light technology" and phosphors to form white light; the second is to mix multiple monochromatic lights. Both methods have successfully produced exposed devices. The white light system produced by the first method emits yellow light when the phosphor is excited by blue light, and the blue light and yellow light mix to form white light. The second method uses chips of different colors of light to be packaged together, and white light is generated by mixing the colors of light.

Among them, the first method, phosphor-converted white light LED, is the most commonly used method, but the loss of light efficiency due to white light frequency reduction is 10%-30%. In addition, there are stability issues with phosphor aging and packaging cost issues, and Dependence on GaN-based LEDs. The production process of the second method is more complicated and the production cost is high.

Therefore, how to provide high-efficiency and low-cost white light LEDs is an urgent problem that needs to be solved by those skilled in the art.

Contents of the invention

In view of this, in order to solve the above problems, the present invention provides a white light LED structure with an extremely high barrier layer insertion layer. The technical solution is as follows:

A white light LED structure with an extremely high barrier layer insertion layer, the white light LED structure includes:

substrate;

An N-type layer, a dual-band MQW layer and a P-type layer are arranged on the substrate in sequence;

Wherein, the dual-band MQW layer includes: at least one yellow-band MQW layer that is stacked in sequence adjacent to the substrate, and at least one blue-band MQW layer that is stacked in sequence adjacent to the P-type layer. ;

The yellow light band MQW layer includes a first functional layer and a second functional layer arranged sequentially in the first direction, and the blue light band MQW layer includes a third functional layer and a fourth functional layer arranged sequentially in the first direction. Functional layer, the first direction is perpendicular to the substrate and directed from the substrate to the P-type layer;

An extremely high barrier layer insertion layer is provided sequentially overlapping with the fourth functional layer.

Preferably, in the above white light LED structure, the substrate is a ternary In _x Ga _(1-x) N substrate, where 0.05<x<0.4, including endpoint values.

Preferably, in the above white light LED structure, the N-type layer is an In _x Ga _(1-x) N layer, where 0.05<x<0.4, including endpoint values;

The doping elements of the N-type layer are Si and In, where the doping concentration of Si is 2×10 ¹⁸ /cm ³ -9×10 ¹⁸ /cm ³ , including endpoint values;

The thickness of the N-type layer is 0.2 μm-1 μm, inclusive.

Preferably, in the above white light LED structure, the number of layers of the dual-band MQW layer is 2-8 layers, including endpoint values;

Wherein, the number of layers of the yellow light band MQW layer is 1-7 layers, including endpoint values;

The number of layers of the blue-light band MQW layer ranges from 1 to 7, including endpoint values.

Preferably, in the above white light LED structure, the first functional layer is an In _x Ga _(1-x) N layer, where 0.2<x<0.4, including endpoint values;

The thickness of the first functional layer is 3nm-10nm, inclusive.

Preferably, in the above white light LED structure, the second functional layer is an In _y Ga _(1-y) N layer, where 0.05<y<0.4, including endpoint values;

The thickness of the second functional layer is 5nm-15nm, inclusive.

Preferably, in the above white light LED structure, the third functional layer is an In _x Ga _(1-x) N layer, where 0.10<x<0.3, including endpoint values;

The thickness of the third functional layer is 3nm-10nm, inclusive.

Preferably, in the above white light LED structure, the fourth functional layer is an In _y Ga _(1-y) N layer, where 0.05<y<0.4, including endpoint values;

The thickness of the fourth functional layer is 5nm-15nm, inclusive.

Preferably, in the above-mentioned white light LED structure, the number of layers of the extremely high barrier layer insertion layer is 1-5 layers, including endpoint values;

The thickness of the extremely high barrier layer insertion layer is 0.5nm-2nm, including endpoint values;

The extremely high barrier layer insertion layer is an AlGaN extremely high barrier layer insertion layer or an AlInGaN extremely high barrier layer insertion layer or an AlN extremely high barrier layer insertion layer, wherein the Al component is 0.005-0.04, and the In component is 0.05-0.4 .

Preferably, in the above white light LED structure, the P-type layer is an In _x Ga _(1-x) N layer, where 0.05<x<0.4, including endpoint values;

The doping elements of the P-type layer are Mg and In, wherein the doping concentration of Si is 1×10 ¹⁸ /cm ³ -8×10 ¹⁸ /cm ³ , including endpoint values;

The thickness of the P-type layer is 0.2 μm-1 μm, inclusive.

Compared with the existing technology, the beneficial effects achieved by the present invention are:

This white LED structure with an extremely high barrier layer insertion layer generates a dual-band MQW layer on the substrate, so that the white LED structure excites blue light and yellow light at the same time, and the blue light and yellow light are mixed to produce white light, and in the blue light band The structure of inserting an extremely high barrier layer into the MQW layer (on both sides or one side of the well) can avoid the problem of inability to excite the blue light spectrum due to the energy band problem of the blue light emitting region, and then successfully grow high luminous efficiency and stability. Good and uniform chromaticity white LED.

Compared with the existing white light LED technology, this application does not use fluorescent powder, which can not only reduce the packaging process, but also reduce the stability problems caused by the aging of the fluorescent powder.

Description of the drawings

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are only These are embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on the provided drawings without exerting creative efforts.

Figure 1 is a schematic structural diagram of a white LED structure with an extremely high barrier layer insertion layer provided by an embodiment of the present invention;

Figure 2 is a schematic structural diagram of another white light LED structure with an extremely high barrier layer insertion layer provided by an embodiment of the present invention;

Figure 3 is a schematic structural diagram of another white LED structure with an extremely high barrier layer insertion layer provided by an embodiment of the present invention;

Figure 4 is a schematic structural diagram of another white LED structure with an extremely high barrier layer insertion layer provided by an embodiment of the present invention;

FIG. 5 is a schematic structural diagram of another white LED structure with an extremely high barrier layer insertion layer provided by an embodiment of the present invention.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.

In order to make the above objects, features and advantages of the present invention more obvious and understandable, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.

Referring to Figure 1, Figure 1 is a schematic structural diagram of a white light LED structure with an extremely high barrier layer insertion layer provided by an embodiment of the present invention. The white light LED structure includes:

substrate 11;

The N-type layer 12, the dual-band MQW layer 13 and the P-type layer 14 are sequentially provided on the substrate 11;

Wherein, the dual-band MQW layer 13 includes: at least one yellow-band MQW layer 15 that is stacked in sequence adjacent to the substrate 11, and at least one layer of yellow-band MQW layer 15 that is stacked in sequence adjacent to the P-type layer 14. Blue band MQW layer 16;

The yellow light band MQW layer 15 includes a first functional layer 17 and a second functional layer 18 arranged sequentially in the first direction, and the blue light band MQW layer 16 includes a third functional layer arranged sequentially in the first direction. layer 19 and the fourth functional layer 20, the first direction is perpendicular to the substrate 11 and directed from the substrate 11 to the P-type layer 14;

A very high barrier layer insertion layer 21 is provided sequentially overlapping the fourth functional layer 20 .

In this embodiment, the white LED structure with an extremely high barrier layer insertion layer is generated by generating a dual-band MQW layer 13 on the substrate 11, so that the white LED structure simultaneously excites blue light and yellow light, and blue light and yellow light. Mixing produces white light, and inserting a very high barrier layer insertion layer 21 into the blue light band MQW layer 16 (on both sides or one side of the well) can avoid the problem that the blue light spectrum cannot be excited due to the energy band problem of the blue light emitting region. Then, white light LEDs with high luminous efficiency, good stability and uniform chromaticity were successfully grown.

Compared with the existing white light LED technology, this application does not use fluorescent powder, which can not only reduce the packaging process, but also reduce the stability problems caused by the aging of the fluorescent powder.

Further, based on the above embodiments of the present invention, the substrate 11 includes but is not limited to a ternary In _x Ga _(1-x) N substrate, where 0.05<x<0.4 includes endpoint values.

Further, based on the above embodiments of the present invention, the N-type layer 12 is an In _x Ga _(1-x) N layer, where 0.05<x<0.4, including endpoint values;

The doping elements of the N-type layer 12 are Si and In, where the doping concentration of Si is 2×10 ¹⁸ /cm ³ -9×10 ¹⁸ /cm ³ , including endpoint values;

The thickness of the N-type layer 12 is 0.2 μm-1 μm, inclusive.

It should be noted that the In concentration in the N-type layer 12 is the same as the In concentration in the ternary In _x Ga _(1-x) N substrate.

Further, based on the above embodiments of the present invention, the number of layers of the dual-band MQW layer 13 is 2-8 layers, including endpoint values;

Wherein, the number of layers of the yellow light band MQW layer 15 is 1-7 layers, including endpoint values;

The number of layers of the blue-band MQW layer 16 ranges from 1 to 7 layers. Include endpoint values.

In this embodiment, for example, the number of layers of the yellow light band MQW layer 15 is one layer, and the number of layers of the blue light band MQW layer 16 is three layers.

Further, based on the above embodiments of the present invention, the first functional layer 17 is an In _x Ga _(1-x) N layer, where 0.2<x<0.4, including endpoint values;

The thickness of the first functional layer 17 is 3 nm-10 nm, inclusive.

In this embodiment, the thickness of the first functional layer 17 is 5 nm or 7 nm or 9 nm.

Further, based on the above embodiment of the present invention, the second functional layer 18 is an In _y Ga _(1-y) N layer, where 0.05＜y＜0.4, including endpoint values;

The thickness of the second functional layer 18 is 5 nm-15 nm, inclusive.

In this embodiment, the composition of In in the second functional layer 18 is the same as the composition of In in the substrate, and the thickness of the second functional layer 18 is 8 nm, 10 nm, or 12 nm.

It should be noted that the second functional layer 18 may be doped with Si or not. When doped with Si, the doping concentration of Si is 2×10 ¹⁸ /cm ³ -9×10 ¹⁸ /cm ³ , including endpoint values.

Further, based on the above embodiment of the present invention, the third functional layer 19 is an In _x Ga _(1-x) N layer, where 0.10<x<0.3, including endpoint values;

The thickness of the third functional layer 19 is 3 nm-10 nm, inclusive.

In this embodiment, the thickness of the third functional layer 19 is 5 nm or 7 nm or 9 nm.

Further, based on the above embodiments of the present invention, the fourth functional layer 20 is an In _y Ga _(1-y) N layer, where 0.05<y<0.4, including endpoint values;

The thickness of the fourth functional layer 20 is 5 nm-15 nm, inclusive.

In this embodiment, the composition of In in the fourth functional layer 20 is the same as the composition of In in the substrate, and the thickness of the fourth functional layer 20 is 8 nm, 10 nm, or 12 nm.

It should be noted that the fourth functional layer 20 may be doped with Si or not. When doped with Si, the doping concentration of Si is 2×10 ¹⁸ /cm ³ -9×10 ¹⁸ /cm ³ , including endpoint values.

Further, based on the above embodiments of the present invention, the number of layers of the extremely high barrier layer insertion layer 21 is 1-5 layers, including endpoint values;

The thickness of the extremely high barrier layer insertion layer 21 is 0.5nm-2nm, including endpoint values;

The extremely high barrier layer insertion layer 21 is an AlGaN extremely high barrier layer insertion layer or an AlInGaN extremely high barrier layer insertion layer or an AlN extremely high barrier layer insertion layer or an N-AlGaN extremely high barrier layer insertion layer, wherein the Al component is 0.005-0.04, In component is 0.05-0.4.

In this embodiment, the composition of In in the extremely high barrier layer insertion layer 21 is the same as the composition of In in the substrate, and the thickness of the extremely high barrier layer insertion layer 21 is 0.7nm or 1nm or 1.3 nm.

Further, based on the above embodiments of the present invention, the P-type layer 14 is an In _x Ga _(1-x) N layer, where 0.05<x<0.4, including endpoint values;

The doping elements of the P-type layer 14 are Mg and In, wherein the doping concentration of Si is 1×10 ¹⁸ /cm ³ -8×10 ¹⁸ /cm ³ , including endpoint values;

The thickness of the P-type layer 14 is 0.2 μm-1 μm, inclusive.

In this embodiment, the composition of In in the P-type layer 14 is the same as the composition of In in the substrate 11 , and the thickness of the P-type layer 14 is 0.4 μm, 0.6 μm, or 0.8 μm.

Based on all the above-mentioned embodiments of the present invention, specific embodiments will be explained below in the form of examples.

Embodiment 1

Referring to Figure 2, Figure 2 is a schematic structural diagram of another white light LED structure with an extremely high barrier layer insertion layer provided by an embodiment of the present invention.

Step 1: Use MOCVD equipment, use trimethylgallium TMGa, triethylgallium TEGa, ammonia NH ₃ as Ga source, N source, N ₂ as carrier gas, N-type and P-type doping sources are silane SiH ₄ respectively and CP ₂ Mg, using an InGaN ternary substrate with an In composition of 0.1.

Step 2: Place the InGaN substrate 11 into the MOCVD reaction chamber, pass in TMGa, TMIn, SIH ₄ and NH ₃ to grow the N-type layer 12. The concentration of Si is 6×10 ¹⁸ /cm ³ and the In composition is 0.1; Thickness 0.5μm.

Step 3: Pass TEGa, TMIn, and NH ₃ to grow the first functional layer 17 with a thickness of 4 nm and an In composition of 0.35.

Step 4: Pass TEGa, TMIn, and NH ₃ to grow the second functional layer 18 with a thickness of 6 nm, an In component of 0.1, and a concentration of SiH ₄ of 5×10 ¹⁸ /cm ³ .

Step 5: Pass TEGa, TMIn, and NH ₃ to grow the third functional layer 19 with a thickness of 4 nm and an In composition of 0.2.

Step 6: Pass TEGa, TMIn, NH ₃ and SIH ₄ to grow the fourth functional layer 20, with a thickness of 2 nm, an In component of 0.1, and a concentration of SiH ₄ of 5×10 ¹⁸ /cm ³ .

Step 7: Pass TEGa, TMIn, NH ₃ and TMAl to grow an extremely high barrier layer insertion layer AlInGaN structure 21 with a thickness of 1 nm and an Al composition of 0.1.

Step 8: Repeat steps 6 and 7.

Step 9: Pass TEGa, TMIn, and NH ₃ to grow the third functional layer 19 with a thickness of 4 nm and an In composition of 0.2.

Step 10: Pass TEGa, TMIn, NH ₃ and SIH ₄ to grow the fourth functional layer 20, with a thickness of 2 nm, an In component of 0.1, and a concentration of SiH ₄ of 5×10 ¹⁸ /cm ³ .

Step 11: Pass TEGa, TMIn, NH ₃ and TMAl to grow an extremely high barrier layer insertion layer AlInGaN structure 21 with a thickness of 1 nm and an Al composition of 0.1.

Step 12: Repeat steps 10 and 11.

Step 13: Pass TEGa, TMIn, NH ₃ and TMAl to grow the current blocking layer 22 with a thickness of 0.02nm and an Al composition of 0.3.

Step 14: Pass in TEGa, TMIn, NH ₃ and Mg to grow the P-type layer 14. Its structure is P-InGaN, the concentration of Mg is 5×10 ¹⁸ /cm ³ , the concentration of In is 0.1, and the thickness is 0.6 μm.

Embodiment 2

Referring to FIG. 3 , FIG. 3 is a schematic structural diagram of another white light LED structure with an extremely high barrier layer insertion layer provided by an embodiment of the present invention.

Step 1: Use MOCVD equipment, use trimethylgallium TMGa, triethylgallium TEGa, ammonia NH ₃ as Ga source, N source, N ₂ as carrier gas, N-type and P-type doping sources are silane SiH ₄ respectively and CP ₂ Mg, using an InGaN ternary substrate with an In composition of 0.1.

Step 2: Put the InGaN substrate 11 into the MOCVD reaction chamber, pass in TMGa, TMIn, SIH4, and NH ₃ to grow the N-type layer 12. The concentration of Si is 6×10 ¹⁸ /cm ³ and the In composition is 0.1; thickness 0.5μm.

Step 3: Pass TEGa, TMIn, and NH ₃ to grow the first functional layer 17 with a thickness of 4 nm and an In composition of 0.35.

Step 4: Pass TEGa, TMIn, and NH ₃ to grow the second functional layer 18 with a thickness of 6 nm, an In composition of 0.1, and a concentration of SiH ₄ of 5×10 ¹⁸ /cm ³ .

Step 5: Pass in TEGa, TMIn, and NH ₃ to grow the third functional layer 19 with a thickness of 4 nm and an In composition of 0.2.

Step 6: Pass TEGa, TMIn, NH ₃ and SIH ₄ to grow the fourth functional layer 20, with a thickness of 2 nm, an In composition of 0.1, and a concentration of SiH ₄ of 5×10 ¹⁸ /cm ³ .

Step 7: Pass TEGa, TMIn, NH ₃ and TMAl to grow an extremely high barrier layer insertion layer AlN structure 21 with a thickness of 1 nm and an Al composition of 0.1.

Step 8: Repeat steps 6 and 7.

Step 9: Pass TEGa, TMIn, and NH ₃ to grow the third functional layer 19 with a thickness of 4 nm and an In composition of 0.2.

Step 10: Pass TEGa, TMIn, NH ₃ and SIH ₄ to grow the fourth functional layer 20, with a thickness of 2 nm, an In component of 0.1, and a concentration of SiH ₄ of 5×10 ¹⁸ /cm ³ .

Step 11: Pass TEGa, TMIn, NH ₃ and TMAl to grow a 1 nm extremely high barrier layer insertion layer AlN structure 21 with a thickness of 1 nm and an Al composition of 0.1.

Step 12: Repeat steps 10 and 11.

Step 13: Pass TEGa, TMIn, NH3, and TMAl to grow the current blocking layer 22 with a thickness of 0.02 nm and an Al composition of 0.3.

Step 14: Pass in TEGa, TMIn, NH ₃ and Mg to grow the P-type layer 14. Its structure is P-InGaN, the concentration of Mg is 5×10 ¹⁸ /cm ³ , the concentration of In is 0.1, and the thickness is 0.6 μm.

From the comparison between Embodiment 1 and Embodiment 2, it can be seen that the extremely high barrier layer insertion layer is different, but the purpose is to increase the well barrier energy level difference of blue light by doping Al at the blue light barrier to increase carriers. The limiting effect increases the probability of blue light emission.

Embodiment 3

Referring to FIG. 4 , FIG. 4 is a schematic structural diagram of another white light LED structure with an extremely high barrier layer insertion layer provided by an embodiment of the present invention.

Step 1: Use MOCVD equipment, use trimethylgallium TMGa, triethylgallium TEGa, ammonia NH ₃ as Ga source, N source, N ₂ as carrier gas, N-type and P-type doping sources are silane SiH ₄ respectively and CP ₂ Mg, using an InGaN ternary substrate with an In composition of 0.1.

Step 2: Place the InGaN substrate 11 into the MOCVD reaction chamber, pass in TMGa, TMIn, SIH ₄ and NH ₃ to grow the N-type layer 12. The concentration of Si is 6×10 ¹⁸ /cm ³ and the In composition is 0.1; Thickness 0.5μm.

Step 3: Pass TEGa, TMIn, and NH ₃ to grow the first functional layer 17 with a thickness of 4 nm and an In composition of 0.35.

Step 4: Pass TEGa, TMIn, and NH ₃ to grow the second functional layer 18 with a thickness of 6 nm, an In component of 0.1, and a concentration of SiH ₄ of 5×10 ¹⁸ /cm ³ .

Step 5: Pass TEGa, TMIn, and NH ₃ to grow the third functional layer 19 with a thickness of 4 nm and an In composition of 0.2.

Step 6: Pass TEGa, TMIn, NH ₃ and TMAl to grow an extremely high barrier layer insertion layer AlInGaN structure 21 with a thickness of 8 nm and an Al composition of 0.1.

Step 7: Pass TEGa, TMIn, and NH ₃ to grow the third functional layer 19 with a thickness of 4 nm and an In composition of 0.2.

Step 8: Pass TEGa, TMIn, NH ₃ and TMAl to grow an extremely high barrier layer insertion layer AlInGaN structure 21 with a thickness of 8 nm and an Al composition of 0.1.

Step 9: Pass TEGa, TMIn, NH ₃ and TMAl to grow the current blocking layer 22 with a thickness of 0.02nm and an Al composition of 0.3.

Step 10: Pass in TEGa, TMIn, NH ₃ and Mg to grow the P-type layer 14. Its structure is P-InGaN, the concentration of Mg is 5×10 ¹⁸ /cm ³ , the concentration of In is 0.1, and the thickness is 0.6 μm.

From the comparison between Embodiment 3 and Embodiment 1, it can be seen that the thickness of the extremely high barrier layer insertion layer is different. The extremely high barrier layer insertion layer in Embodiment 3 is thicker. Although it can increase the probability of blue light emission, due to the extremely high barrier layer insertion layer, The high barrier layer insertion layer is thicker, which may lead to higher voltage and electrical deviation.

Embodiment 4

Referring to FIG. 5 , FIG. 5 is a schematic structural diagram of another white light LED structure with an extremely high barrier layer insertion layer provided by an embodiment of the present invention.

Step 1: Use MOCVD equipment, use trimethylgallium TMGa, triethylgallium TEGa, ammonia NH ₃ as Ga source, N source, N ₂ as carrier gas, N-type and P-type doping sources are silane SiH ₄ respectively and CP ₂ Mg, using an InGaN ternary substrate with an In composition of 0.1.

Step 2: Place the InGaN substrate 11 into the MOCVD reaction chamber, pass in TMGa, TMIn, SIH ₄ and NH ₃ to grow the N-type layer 12. The concentration of Si is 6×10 ¹⁸ /cm ³ and the In composition is 0.1; Thickness 0.5μm.

Step 3: Pass TEGa, TMIn, and NH ₃ to grow the first functional layer 17 with a thickness of 4 nm and an In composition of 0.35.

Step 4: Pass TEGa, TMIn, NH ₃ and SIH ₄ to grow the second functional layer 18, with a thickness of 2 nm, an In composition of 0.1, and a concentration of SiH ₄ of 5×10 ¹⁸ /cm ³ .

Step 5: Pass TEGa, TMIn, and NH ₃ to grow the third functional layer 19 with a thickness of 4 nm and an In composition of 0.2.

Step 6: Pass TEGa, TMIn, and NH ₃ to grow the fourth functional layer 20 with a thickness of 6 nm, an In composition of 0.1, and a concentration of SiH ₄ of 5×10 ¹⁸ /cm ³ .

Step 7: Repeat steps 5 and 6.

Step 8: Pass in TEGa, TMIn, NH ₃ and TMAl to grow the current blocking layer 22 with a thickness of 0.02nm and an Al composition of 0.3.

Step 9: Pass in TEGa, TMIn, NH ₃ and Mg to grow the P-type layer 14. Its structure is P-InGaN, the concentration of Mg is 5×10 ¹⁸ /cm ³ , the concentration of In is 0.1, and the thickness is 0.6 μm.

From the comparison between Example 3 and Example 1, it can be seen that in Example 4, there is no extremely high barrier layer insertion layer in the blue light band MQW layer. This structure may cause the blue light to be unable to be excited, thereby leading to no generation of white light; the nanometer yellow light band MQW Lines can be added or not, because the In component of MQW in the yellow light band is sufficient and the energy level difference is sufficient.

It can be seen from the above description that the present invention adopts a manufacturing method of mixing blue light band and yellow light band to produce white light LED, which is more effective than the white light produced by existing phosphor excitation and mixing of multi-color LED chips.

The special feature of this structure is that dual-band LEDs are grown on a ternary InGaN substrate. The stress of the dual-band InGaN/InGaN MQW structure on the ternary substrate can be reduced to 75% of that of the traditional structure. The significant reduction in stress leads to The piezoelectric polarization effect and the built-in electric field are weakened, thereby suppressing the separation effect of space charge and improving the luminous efficiency.

However, the In component of MQW in the yellow light band is higher, so the energy level difference of the well barrier is larger, which can confine more carriers, while the energy level difference of the blue light well barrier is smaller, and the ability to confine carriers is smaller, almost Without carriers, blue light is difficult to be excited and cannot produce white light.

Therefore, the present invention provides a structure of an extremely high barrier layer insertion layer, which is grown on both sides or one side of at least the last blue light well close to the P-type layer. The purpose is to shorten the distance for holes to migrate to the blue light well. From an energy band perspective, it can increase the conduction band well barrier energy level difference, effectively control the carrier migration rate, so that it can be confined in the blue light well, thereby recombinantly emitting blue light. This extremely high barrier intercalation layer is a key factor in producing white light.

The white light LED structure with an extremely high barrier layer insertion layer provided by the present invention has been introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only for reference. To help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the field, there will be changes in the specific implementation and application scope based on the idea of the present invention. In summary, this specification The contents should not be construed as limitations of the invention.

It should be noted that each embodiment in this specification is described in a progressive manner. Each embodiment focuses on its differences from other embodiments. The same and similar parts between the various embodiments are referred to each other. Can. As for the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple. For relevant details, please refer to the description in the method section.

It should also be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that these entities or operations There is no such actual relationship or sequence between them. Furthermore, the terms "comprises," "comprises," or any other variation thereof are intended to cover a non-exclusive inclusion such that a list of elements inherent in, or otherwise included in, a process, method, article, or apparatus includes , elements inherent in a method, article or device. Without further limitation, an element defined by the statement "comprises a..." does not exclude the presence of additional identical elements in a process, method, article, or apparatus that includes the stated element.

The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be practiced in other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (7)

1. A white light LED structure with an extremely high barrier layer insertion layer, characterized in that the white light LED structure includes: substrate; An N-type layer, a dual-band MQW layer and a P-type layer are arranged on the substrate in sequence; Wherein, the dual-band MQW layer includes: at least one yellow-band MQW layer that is stacked in sequence adjacent to the substrate, and at least one blue-band MQW layer that is stacked in sequence adjacent to the P-type layer. ; The yellow light band MQW layer includes a first functional layer and a second functional layer arranged sequentially in the first direction, and the blue light band MQW layer includes a third functional layer and a fourth functional layer arranged sequentially in the first direction. Functional layer, the first direction is perpendicular to the substrate and directed from the substrate to the P-type layer; An extremely high barrier layer insertion layer is provided sequentially overlapping with the fourth functional layer; Wherein, the third functional layer is an In _x Ga _(1-x) N layer, where 0.10<x<0.3, including endpoint values; the thickness of the third functional layer is 3nm-10nm, including endpoint values; The fourth functional layer is an In _y Ga _(1-y) N layer, where 0.05<y<0.4, including endpoint values; the thickness of the fourth functional layer is 5nm-15nm, including endpoint values; The number of layers of the extremely high barrier layer insertion layer is 1-5 layers, including endpoint values; the thickness of the extremely high barrier layer insertion layer is 0.5nm-2nm, including endpoint values; the extremely high barrier layer insertion layer It is an AlInGaN extremely high barrier layer insertion layer, in which the Al component is 0.005-0.04 and the In component is 0.05-0.4. 2. The white light LED structure according to claim 1, wherein the substrate is a ternary _{InxGa (1-x)} N substrate, wherein 0.05<x<0.4, including endpoint values. 3. The white light LED structure according to claim 1, wherein the N-type layer is an In _x Ga _(1-x) N layer, wherein 0.05<x<0.4, including endpoint values; The doping elements of the N-type layer are Si and In, where the doping concentration of Si is 2×10 ¹⁸ /cm ³ -9×10 ¹⁸ /cm ³ , including endpoint values; The thickness of the N-type layer is 0.2 μm-1 μm, inclusive. 4. The white light LED structure according to claim 1, wherein the number of layers of the dual-band MQW layer is 2-8 layers, including endpoint values; Wherein, the number of layers of the yellow light band MQW layer is 1-7 layers, including endpoint values; The number of layers of the blue-light band MQW layer ranges from 1 to 7, including endpoint values. 5. The white light LED structure according to claim 1, wherein the first functional layer is an _{InxGa (1-x)} N layer, where 0.2<x<0.4, including endpoint values; The thickness of the first functional layer is 3nm-10nm, inclusive. 6. The white light LED structure according to claim 1, wherein the second functional layer is an In _y Ga _(1-y) N layer, wherein 0.05<y<0.4, including endpoint values; The thickness of the second functional layer is 5nm-15nm, inclusive. 7. The white light LED structure according to claim 1, wherein the P-type layer is an _{InxGa (1-x)} N layer, where 0.05<x<0.4, including endpoint values; The doping elements of the P-type layer are Mg and In, wherein the doping concentration of Si is 1×10 ¹⁸ /cm ³ -8×10 ¹⁸ /cm ³ , including endpoint values; The thickness of the P-type layer is 0.2 μm-1 μm, inclusive.