CN110176526A - A kind of white-light LED structure with high barrier layer insert layer - Google Patents
A kind of white-light LED structure with high barrier layer insert layer Download PDFInfo
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- CN110176526A CN110176526A CN201910507115.2A CN201910507115A CN110176526A CN 110176526 A CN110176526 A CN 110176526A CN 201910507115 A CN201910507115 A CN 201910507115A CN 110176526 A CN110176526 A CN 110176526A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 67
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- 239000010410 layer Substances 0.000 claims description 244
- 239000002346 layers by function Substances 0.000 claims description 67
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- 241001062009 Indigofera Species 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 23
- 239000000843 powder Substances 0.000 abstract description 11
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- 238000001228 spectrum Methods 0.000 abstract description 4
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- 229910000069 nitrogen hydride Inorganic materials 0.000 description 41
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 29
- 230000026267 regulation of growth Effects 0.000 description 20
- 239000011777 magnesium Substances 0.000 description 18
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000013256 coordination polymer Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Abstract
The present invention improves a kind of white-light LED structure with high barrier layer insert layer, the white-light LED structure with high barrier layer insert layer by generating two waveband mqw layer on substrate, so that the white-light LED structure excites blue light and yellow light simultaneously, blue light and yellow light mixing generate white light, and (trap two sides or side) is inserted into the structure of high barrier layer insert layer in blue wave band mqw layer, can be to avoid because of blue light emitting area energy band the problem of, the problem of causing blue spectrum that cannot excite, and then successful growth goes out luminous efficiency height, stability is good and the white light LEDs of evenness.Compared with existing White light LED technology, the application does not have to fluorescence light powder, the process that can not only reduce encapsulation in this way, but also can be reduced the stability problem generated by fluorescent powder aging.
Description
Technical field
The present invention relates to LED technology fields, more specifically to a kind of white light LEDs with high barrier layer insert layer
Structure.
Background technique
The wave-length coverage of visible light is 380nm-760nm, is the seven-colour-light that human eye can be experienced, i.e., red, orange, yellow,
It is green, green, blue, purple, but the seven-colour-light is all a kind of monochromatic light, since white light is not monochromatic light, in the spectrum of visible light
In there is no white light, be by a variety of photosynthetic complex lights of monochrome.
So, LED is made to issue white light, its spectral characteristic should include entire visible spectral region.According to visible
The research of light, the white light that human eye can be shown at least need the mixing of two kinds of light, i.e. two wavelength shine (blue light+yellow light) or three waves
The mode of long luminous (blue light+green light+feux rouges).
For general illumination, on process structure, white light LEDs generally use two methods and are formed, the first is to utilize " indigo plant
Light technology " and fluorescent powder cooperatively form white light；Second is a variety of monochromatic light mixed methods.Both methods all can have been produced successfully
Raw exposure device.The white light systems that first method generates, issue sodium yellow, blue light and yellow light after fluorescent powder is excited by blue light
It is mixed to form white light.Second method uses the chip package of different color light together, is blended to produce white light by white light.
Wherein, the white light LEDs that first method fluorescent powder is converted is most common methods, but since white light frequency reducing causes
Light efficiency loss be 10%-30%, be additionally present of the stability problem and packing cost problem of fluorescent powder aging, and to GaN
The dependency problem of base LED.The production process of second method is more complicated, and production cost is high.
Therefore, how to provide the white light LEDs of high efficiency and low cost is those skilled in the art's urgent problem to be solved.
Summary of the invention
In view of this, to solve the above problems, the present invention provides a kind of white light LEDs knot with high barrier layer insert layer
Structure, technical solution are as follows:
A kind of white-light LED structure with high barrier layer insert layer, the white-light LED structure include:
Substrate；
Set gradually N-type layer, two waveband mqw layer and P-type layer over the substrate；
Wherein, the two waveband mqw layer includes: at least one layer of yellow band for stacking gradually setting of the adjacent substrate
At least one layer of blue wave band mqw layer for stacking gradually setting of mqw layer and the adjacent P-type layer；
The yellow band mqw layer includes the first functional layer and the second functional layer set gradually in a first direction, institute
Stating blue wave band mqw layer includes the third functional layer and the 4th functional layer set gradually in said first direction, and described first
The P-type layer is directed toward perpendicular to the substrate, and by the substrate in direction；
The high barrier layer insert layer of setting is successively overlapped with the 4th functional layer.
Preferably, in above-mentioned white-light LED structure, the substrate is ternary InxGa(1-x)N substrate, wherein 0.05 < x <
0.4, including endpoint value.
Preferably, in above-mentioned white-light LED structure, the N-type layer is InxGa(1-x)N layers, wherein 0.05 < x < 0.4,
Including endpoint value；
The doped chemical of the N-type layer is Si and In, wherein the doping concentration of Si is 2 × 1018/cm3-9×1018/cm3,
Including endpoint value；
The N-type layer with a thickness of 0.2 μm -1 μm, including endpoint value.
Preferably, in above-mentioned white-light LED structure, the number of plies of the two waveband mqw layer is 2 layers -8 layers, including endpoint value；
Wherein, the number of plies of the yellow band mqw layer is 1 layer -7 layers, including endpoint value；
The number of plies of the blue wave band mqw layer is 1 layer -7 layers；Including endpoint value.
Preferably, in above-mentioned white-light LED structure, first functional layer is InxGa(1-x)N layers, wherein 0.2 < x <
0.4, including endpoint value；
First functional layer with a thickness of 3nm-10nm, including endpoint value.
Preferably, in above-mentioned white-light LED structure, second functional layer is InyGa(1-y)N layers, wherein 0.05 < y <
0.4, including endpoint value；
Second functional layer with a thickness of 5nm-15nm, including endpoint value.
Preferably, in above-mentioned white-light LED structure, the third functional layer is InxGa(1-x)N layers, wherein 0.10 < x <
0.3, including endpoint value；
The third functional layer with a thickness of 3nm-10nm, including endpoint value.
Preferably, in above-mentioned white-light LED structure, the 4th functional layer is InyGa(1-y)N layers, wherein 0.05 < y <
0.4, including endpoint value；
4th functional layer with a thickness of 5nm-15nm, including endpoint value.
Preferably, in above-mentioned white-light LED structure, the number of plies of the high barrier layer insert layer is 1 layer -5 layers, including endpoint
Value；
The high barrier layer insert layer with a thickness of 0.5nm-2nm, including endpoint value；
The high barrier layer insert layer is the high barrier layer insert layer of AlGaN or the high barrier layer insert layer of AlInGaN or the pole AlN
High barrier layer insert layer, wherein Al group is divided into 0.005-0.04, and In group is divided into 0.05-0.4.
Preferably, in above-mentioned white-light LED structure, the P-type layer is InxGa(1-x)N layers, wherein 0.05 < x < 0.4,
Including endpoint value；
The doped chemical of the P-type layer is Mg and In, wherein the doping concentration of Si is 1 × 1018/cm3-8×1018/cm3,
Including endpoint value；
The P-type layer with a thickness of 0.2 μm -1 μm, including endpoint value.
Compared to the prior art, what the present invention realized has the beneficial effect that
The white-light LED structure with high barrier layer insert layer by generating two waveband mqw layer on substrate, so that described
White-light LED structure excites blue light and yellow light simultaneously, and blue light and yellow light mixing generate white light, the and (trap in blue wave band mqw layer
Two sides or side) the high barrier layer insert layer of insertion structure, can be to avoid because of blue light emitting area energy band the problem of, lead to blue light light
Spectrum the problem of cannot exciting, and then successful growth goes out that luminous efficiency is high, stability is good and the white light LEDs of evenness.
Compared with existing White light LED technology, the application is without fluorescence light powder, the process that can both reduce encapsulation in this way,
It can be reduced the stability problem generated by fluorescent powder aging again.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural representation of the white-light LED structure with high barrier layer insert layer provided in an embodiment of the present invention
Figure；
Fig. 2 is that the structure of another white-light LED structure with high barrier layer insert layer provided in an embodiment of the present invention is shown
It is intended to；
Fig. 3 is that the structure of another white-light LED structure with high barrier layer insert layer provided in an embodiment of the present invention is shown
It is intended to；
Fig. 4 is that the structure of another white-light LED structure with high barrier layer insert layer provided in an embodiment of the present invention is shown
It is intended to；
Fig. 5 is that the structure of another white-light LED structure with high barrier layer insert layer provided in an embodiment of the present invention is shown
It is intended to.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
With reference to Fig. 1, Fig. 1 is a kind of white-light LED structure with high barrier layer insert layer provided in an embodiment of the present invention
Structural schematic diagram, the white-light LED structure include:
Substrate 11；
N-type layer 12, two waveband mqw layer 13 and the P-type layer 14 being successively set on the substrate 11；
Wherein, the two waveband mqw layer 13 includes: at least one layer of yellow light for stacking gradually setting of the adjacent substrate 11
At least one layer of blue wave band mqw layer 16 for stacking gradually setting of wave band mqw layer 15 and the adjacent P-type layer 14；
The yellow band mqw layer 15 includes the first functional layer 17 and the second functional layer set gradually in a first direction
18, the blue wave band mqw layer 16 includes the third functional layer 19 and the 4th functional layer set gradually in said first direction
20, the first direction is directed toward the P-type layer 14 perpendicular to the substrate 11, and by the substrate 11；
The high barrier layer insert layer 21 of setting is successively overlapped with the 4th functional layer 20.
In this embodiment, the white-light LED structure of high barrier layer insert layer should be had by generating double wave on substrate 11
Section mqw layer 13, so that the white-light LED structure excites blue light and yellow light simultaneously, blue light and yellow light, which mix, generates white light, and
(trap two sides or side) is inserted into the structure of high barrier layer insert layer 21 in blue wave band mqw layer 16, can be to avoid because of blue light emitting
The problem of area's energy band, the problem of causing blue spectrum that cannot excite, and then successful growth go out that luminous efficiency is high, stability is good and color
Spend uniform white light LEDs.
Compared with existing White light LED technology, the application is without fluorescence light powder, the process that can both reduce encapsulation in this way,
It can be reduced the stability problem generated by fluorescent powder aging again.
Further, it is based on the above embodiment of the present invention, the substrate 11 includes, but are not limited to ternary InxGa(1-x)N lining
Bottom, wherein 0.05 < x < 0.4, including endpoint value.
Further, it is based on the above embodiment of the present invention, the N-type layer 12 is InxGa(1-x)N layers, wherein 0.05 < x <
0.4, including endpoint value；
The doped chemical of the N-type layer 12 is Si and In, wherein the doping concentration of Si is 2 × 1018/cm3-9×1018/
cm3, including endpoint value；
The N-type layer 12 with a thickness of 0.2 μm -1 μm, including endpoint value.
It should be noted that the concentration of In and the ternary In in the N-type layer 12xGa(1-x)In concentration phase in N substrate
Together.
Further, it is based on the above embodiment of the present invention, the number of plies of the two waveband mqw layer 13 is 2 layers -8 layers, including end
Point value；
Wherein, the number of plies of the yellow band mqw layer 15 is 1 layer -7 layers, including endpoint value；
The number of plies of the blue wave band mqw layer 16 is 1 layer -7 layers.Including endpoint value.
In this embodiment, for example, the number of plies of the yellow band mqw layer 15 is 1 layer, the blue wave band mqw layer 16
The number of plies be 3 layers.
Further, it is based on the above embodiment of the present invention, first functional layer 17 is InxGa(1-x)N layers, wherein 0.2
< x < 0.4, including endpoint value；
First functional layer 17 with a thickness of 3nm-10nm, including endpoint value.
In this embodiment, first functional layer 17 with a thickness of 5nm or 7nm or 9nm.
Further, it is based on the above embodiment of the present invention, second functional layer 18 is InyGa(1-y)N layers, wherein 0.05
< y < 0.4, including endpoint value；
Second functional layer 18 with a thickness of 5nm-15nm, including endpoint value.
In this embodiment, the component of In is identical with the component of In in the substrate in second functional layer 18, described
Second functional layer 18 with a thickness of 8nm or 10nm or 12nm.
It should be noted that second functional layer 18 can adulterate Si or the Si that undopes, when adulterating Si, Si's
Doping concentration is 2 × 1018/cm3-9×1018/cm3, including endpoint value.
Further, it is based on the above embodiment of the present invention, the third functional layer 19 is InxGa(1-x)N layers, wherein 0.10
< x < 0.3, including endpoint value；
The third functional layer 19 with a thickness of 3nm-10nm, including endpoint value.
In this embodiment, the third functional layer 19 with a thickness of 5nm or 7nm or 9nm.
Further, it is based on the above embodiment of the present invention, the 4th functional layer 20 is InyGa(1-y)N layers, wherein 0.05
< y < 0.4, including endpoint value；
4th functional layer 20 with a thickness of 5nm-15nm, including endpoint value.
In this embodiment, the component of In is identical with the component of In in the substrate in the 4th functional layer 20, described
4th functional layer 20 with a thickness of 8nm or 10nm or 12nm.
It should be noted that the 4th functional layer 20 can adulterate Si or the Si that undopes, when adulterating Si, Si's
Doping concentration is 2 × 1018/cm3-9×1018/cm3, including endpoint value.
Further, it is based on the above embodiment of the present invention, the number of plies of the high barrier layer insert layer 21 is 1 layer -5 layers, packet
Include endpoint value；
The high barrier layer insert layer 21 with a thickness of 0.5nm-2nm, including endpoint value；
The high barrier layer insert layer 21 is the high barrier layer insert layer of AlGaN or the high barrier layer insert layer of AlInGaN or AlN
High barrier layer insert layer or the high barrier layer insert layer of N-AlGaN, wherein Al group is divided into 0.005-0.04, and In group is divided into 0.05-
0.4。
In this embodiment, the component of In is identical with the component of In in the substrate in the high barrier layer insert layer 21,
The high barrier layer insert layer 21 with a thickness of 0.7nm or 1nm or 1.3nm.
Further, it is based on the above embodiment of the present invention, the P-type layer 14 is InxGa(1-x)N layers, wherein 0.05 < x <
0.4, including endpoint value；
The doped chemical of the P-type layer 14 is Mg and In, wherein the doping concentration of Si is 1 × 1018/cm3-8×1018/
cm3, including endpoint value；
The P-type layer 14 with a thickness of 0.2 μm -1 μm, including endpoint value.
In this embodiment, the component of In is identical with the component of In in the substrate 11 in the P-type layer 14, the p-type
Layer 14 with a thickness of 0.4 μm or 0.6 μm or 0.8 μm.
Based on the above-mentioned whole embodiments of the present invention, illustrated below by way of example of specific embodiment.
Embodiment one
With reference to Fig. 2, Fig. 2 is another white-light LED structure for having high barrier layer insert layer provided in an embodiment of the present invention
Structural schematic diagram.
Step 1: equipment MOCVD is used, with trimethyl gallium TMGa, triethyl-gallium TEGa, ammonia NH3For the source Ga, the source N, N2For
Carrier gas, N-type and p-type doped source are silane SiH respectively4With two luxuriant magnesium CP2Mg, using InGaN ternary substrate, In group is divided into 0.1.
Step 2: InGaN substrate 11 being put into MOCVD reaction chamber, TMGa, TMIn, SIH are passed through4、NH3Grow N-type layer
12, Si concentration is 6 × 1018/cm3, In group is divided into 0.1；0.5 μm of thickness.
Step 3: being passed through TEGa, TMIn, NH3One functional layer 17 of growth regulation, thickness 4nm, In component 0.35.
Step 4: being passed through TEGa, TMIn, NH3Two functional layer 18 of growth regulation, thickness 6nm, In component 0.1, SiH4Concentration be
5×1018/cm3。
Step 5: being passed through TEGa, TMIn, NH3Three functional layer 19 of growth regulation, thickness 4nm, In component 0.2.
Step 6: being passed through TEGa, TMIn, NH3、SIH4Four functional layer 20 of growth regulation, thickness 2nm, In component 0.1, SiH4's
Concentration is 5 × 1018/cm3。
Step 7: being passed through TEGa, TMIn, NH3, TMAl grow high barrier layer insert layer AlInGaN structure 21, with a thickness of
1nm, Al group are divided into 0.1.
Step 8: repeating step 6 and step 7.
Step 9: being passed through TEGa, TMIn, NH3Three functional layer 19 of growth regulation, thickness 4nm, In component 0.2.
Step 10: being passed through TEGa, TMIn, NH3、SIH4Four functional layer 20 of growth regulation, thickness 2nm, In component 0.1, SiH4's
Concentration is 5 × 1018/cm3。
Step 11: being passed through TEGa, TMIn, NH3, TMAl grow high barrier layer insert layer AlInGaN structure 21, with a thickness of
1nm, Al group are divided into 0.1.
Step 12: repeating step 10 and step 11.
Step 13: being passed through TEGa, TMIn, NH3, TMAl grow current barrier layer 22, with a thickness of 0.02nm, Al group is divided into
0.3。
Step 14: being passed through TEGa, TMIn, NH3, Mg growing P-type layer 14, the concentration of structure P-InGaN, Mg is 5 ×
1018/cm3, the concentration 0.1 of In, 0.6 μm of thickness.
Embodiment two
With reference to Fig. 3, Fig. 3 is another white-light LED structure with high barrier layer insert layer provided in an embodiment of the present invention
Structural schematic diagram.
Step 1: equipment MOCVD is used, with trimethyl gallium TMGa, triethyl-gallium TEGa, ammonia NH3For the source Ga, the source N, N2For
Carrier gas, N-type and p-type doped source are silane SiH respectively4With two luxuriant magnesium CP2Mg, using InGaN ternary substrate, In group is divided into 0.1.
Step 2: InGaN substrate 11 being put into MOCVD reaction chamber, TMGa, TMIn, SIH4, NH are passed through3Grow N-type layer
12, Si concentration is 6 × 1018/cm3, In group is divided into 0.1；0.5 μm of thickness.
Step 3: being passed through TEGa, TMIn, NH3One functional layer 17 of growth regulation, thickness 4nm, In component 0.35.
Step 4: being passed through TEGa, TMIn, NH3Two functional layer 18 of growth regulation, thickness 6nm, In component 0.1, SiH4Concentration be
5×1018/cm3。
Step 5: being passed through TEGa, TMIn, NH3, three functional layer 19 of growth regulation, thickness 4nm, In component 0.2.
Step 6: being passed through TEGa, TMIn, NH3、SIH4Four functional layer 20 of growth regulation, thickness 2nm, In component 0.1, SiH4's
Concentration is 5 × 1018/cm3。
Step 7: being passed through TEGa, TMIn, NH3, TMAl grow high barrier layer insert layer AlN structure 21, with a thickness of 1nm, Al
Group is divided into 0.1.
Step 8: repeating step 6 and step 7.
Step 9: being passed through TEGa, TMIn, NH3Three functional layer 19 of growth regulation, thickness 4nm, In component 0.2.
Step 10: being passed through TEGa, TMIn, NH3、SIH4Four functional layer 20 of growth regulation, thickness 2nm, In component 0.1, SiH4's
Concentration is 5 × 1018/cm3。
Step 11: being passed through TEGa, TMIn, NH3, TMAl growth 1nm high barrier layer insert layer AlN structure 21, with a thickness of
1nm, Al group are divided into 0.1.
Step 12: repeating step 10 and step 11.
Step 13: being passed through TEGa, TMIn, NH3, TMAl growth current barrier layer 22, with a thickness of 0.02nm, Al group is divided into
0.3。
Step 14: being passed through TEGa, TMIn, NH3, Mg growing P-type layer 14, the concentration of structure P-InGaN, Mg is 5 ×
1018/cm3, the concentration 0.1 of In, 0.6 μm of thickness.
By the comparison of embodiment one and embodiment two it is found that its high barrier layer insert layer is different, but purpose is all in indigo plant
At light barrier, the differential raising of trap barrier energy of blue light is made by way of adulterating Al, to improve the restriction effect of carrier, increases blue light
Luminous probability.
Embodiment three
With reference to Fig. 4, Fig. 4 is another white-light LED structure with high barrier layer insert layer provided in an embodiment of the present invention
Structural schematic diagram.
Step 1: equipment MOCVD is used, with trimethyl gallium TMGa, triethyl-gallium TEGa, ammonia NH3For the source Ga, the source N, N2For
Carrier gas, N-type and p-type doped source are silane SiH respectively4With two luxuriant magnesium CP2Mg, using InGaN ternary substrate, In group is divided into 0.1.
Step 2: InGaN substrate 11 being put into MOCVD reaction chamber, TMGa, TMIn, SIH are passed through4、NH3Grow N-type layer
12, Si concentration is 6 × 1018/cm3, In group is divided into 0.1；0.5 μm of thickness.
Step 3: being passed through TEGa, TMIn, NH3One functional layer 17 of growth regulation, thickness 4nm, In component 0.35.
Step 4: being passed through TEGa, TMIn, NH3Two functional layer 18 of growth regulation, thickness 6nm, In component 0.1, SiH4Concentration be
5×1018/cm3。
Step 5: being passed through TEGa, TMIn, NH3Three functional layer 19 of growth regulation, thickness 4nm, In component 0.2.
Step 6: being passed through TEGa, TMIn, NH3, TMAl grow high barrier layer insert layer AlInGaN structure 21, with a thickness of
8nm, Al group are divided into 0.1.
Step 7: being passed through TEGa, TMIn, NH3Three functional layer 19 of growth regulation, thickness 4nm, In component 0.2.
Step 8: being passed through TEGa, TMIn, NH3, TMAl grow high barrier layer insert layer AlInGaN structure 21, with a thickness of
8nm, Al group are divided into 0.1.
Step 9: being passed through TEGa, TMIn, NH3, TMAl grow current barrier layer 22, with a thickness of 0.02nm, Al group is divided into
0.3。
Step 10: being passed through TEGa, TMIn, NH3, Mg growing P-type layer 14, the concentration of structure P-InGaN, Mg is 5 ×
1018/cm3, the concentration 0.1 of In, 0.6 μm of thickness.
By the comparison of embodiment three and embodiment one it is found that the thickness of high barrier layer insert layer is different, in embodiment three
High barrier layer insert layer it is thicker, although can play the role of improve blue light emitting probability, due to high barrier layer be inserted into
Layer is thicker, may result in the higher and electrical deviation of voltage.
Example IV
With reference to Fig. 5, Fig. 5 is another white-light LED structure with high barrier layer insert layer provided in an embodiment of the present invention
Structural schematic diagram.
Step 1: equipment MOCVD is used, with trimethyl gallium TMGa, triethyl-gallium TEGa, ammonia NH3For the source Ga, the source N, N2For
Carrier gas, N-type and p-type doped source are silane SiH respectively4With two luxuriant magnesium CP2Mg, using InGaN ternary substrate, In group is divided into 0.1.
Step 2: InGaN substrate 11 being put into MOCVD reaction chamber, TMGa, TMIn, SIH are passed through4、NH3Grow N-type layer
12, Si concentration is 6 × 1018/cm3, In group is divided into 0.1；0.5 μm of thickness.
Step 3: being passed through TEGa, TMIn, NH3One functional layer 17 of growth regulation, thickness 4nm, In component 0.35.
Step 4: being passed through TEGa, TMIn, NH3、SIH4Two functional layer 18 of growth regulation, thickness 2nm, In component 0.1, SiH4's
Concentration is 5 × 1018/cm3。
Step 5: being passed through TEGa, TMIn, NH3Three functional layer 19 of growth regulation, thickness 4nm, In component 0.2.
Step 6: being passed through TEGa, TMIn, NH3Four functional layer 20 of growth regulation, thickness 6nm, In component 0.1, SiH4Concentration be
5×1018/cm3。
Step 7: repeating step 5 and step 6.
Step 8: being passed through TEGa, TMIn, NH3, TMAl grow current barrier layer 22, with a thickness of 0.02nm, Al group is divided into
0.3。
Step 9: being passed through TEGa, TMIn, NH3, Mg growing P-type layer 14, the concentration of structure P-InGaN, Mg is 5 ×
1018/cm3, the concentration 0.1 of In, 0.6 μm of thickness.
By the comparison of embodiment three and embodiment one it is found that there is no high base in example IV in blue wave band mqw layer
Layer insert layer, which may cause blue light and cannot excite, and then lead to the generation of not white light；The nanometer of yellow band MQW
Line, which can add, to be not added, because the In component of yellow band MQW is enough, energy level difference is enough.
As can be seen from the above description, present invention employs the production that blue wave band and yellow band mixing generate white light LEDs
Method is produced effects a lot of compared to the white light that the excitation of existing fluorescent powder and multi-colored led chip hybrid generate.
This structure is particular in that the growth two waveband LED on the substrate of ternary InGaN, the double wave on ternary substrate
The significant decrease for 75%, the Yu Yingli that the stress of section InGaN/InGaN MQW structure can be reduced to traditional structure results in pressure
Electric polarization effect and built in field weaken, to inhibit the separation effect of space charge, improve luminous efficiency.
But it is higher by the In component of yellow band MQW, therefore trap barrier energy is differential larger, can limit more current-carrying
Son, and the energy level difference that blue light trap is built is smaller, the ability of limiting carrier is smaller, and almost without carrier, which results in blue lights
It is not easy to be excited, and white light cannot be generated.
Therefore the present invention provides a kind of structure of high barrier layer insert layer, the structure growth is at least the last one is close
It is said from energy band angle its purpose is to shorten hole migration to the distance of blue light trap in the two sides or side of P-type layer blue light trap
It is differential that conduction band trap barrier energy can be improved, effectively control carrier mobility rate, allow to be limited in blue light trap, thus multiple
Blue light is launched in conjunction.This high barrier layer insert layer is to generate the key factor of white light.
Detailed Jie has been carried out to a kind of white-light LED structure with high barrier layer insert layer provided by the present invention above
It continues, used herein a specific example illustrates the principle and implementation of the invention, and the explanation of above embodiments is only
It is to be used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, according to this hair
Bright thought, there will be changes in the specific implementation manner and application range, in conclusion the content of the present specification should not manage
Solution is limitation of the present invention.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
For the device disclosed in the embodiment, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, phase
Place is closed referring to method part illustration.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that the element that the process, method, article or equipment including a series of elements is intrinsic,
It further include either the element intrinsic for these process, method, article or equipments.In the absence of more restrictions,
The element limited by sentence "including a ...", it is not excluded that in the process, method, article or equipment including the element
In there is also other identical elements.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of white-light LED structure with high barrier layer insert layer, which is characterized in that the white-light LED structure includes:
Substrate；
Set gradually N-type layer, two waveband mqw layer and P-type layer over the substrate；
Wherein, the two waveband mqw layer includes: at least one layer of yellow band MQW for stacking gradually setting of the adjacent substrate
At least one layer of blue wave band mqw layer for stacking gradually setting of layer and the adjacent P-type layer；
The yellow band mqw layer includes the first functional layer and the second functional layer set gradually in a first direction, the indigo plant
Optical band mqw layer includes the third functional layer and the 4th functional layer set gradually in said first direction, the first direction
The P-type layer is directed toward perpendicular to the substrate, and by the substrate；
The high barrier layer insert layer of setting is successively overlapped with the 4th functional layer.
2. white-light LED structure according to claim 1, which is characterized in that the substrate is ternary InxGa(1-x)N substrate,
Wherein, 0.05 < x < 0.4, including endpoint value.
3. white-light LED structure according to claim 1, which is characterized in that the N-type layer is InxGa(1-x)N layers, wherein
0.05 < x < 0.4, including endpoint value；
The doped chemical of the N-type layer is Si and In, wherein the doping concentration of Si is 2 × 1018/cm3-9×1018/cm3, including
Endpoint value；
The N-type layer with a thickness of 0.2 μm -1 μm, including endpoint value.
4. white-light LED structure according to claim 1, which is characterized in that the number of plies of the two waveband mqw layer is 2 layer -8
Layer, including endpoint value；
Wherein, the number of plies of the yellow band mqw layer is 1 layer -7 layers, including endpoint value；
The number of plies of the blue wave band mqw layer is 1 layer -7 layers；Including endpoint value.
5. white-light LED structure according to claim 1, which is characterized in that first functional layer is InxGa(1-x)N layers,
Wherein, 0.2 < x < 0.4, including endpoint value；
First functional layer with a thickness of 3nm-10nm, including endpoint value.
6. white-light LED structure according to claim 1, which is characterized in that second functional layer is InyGa(1-y)N layers,
Wherein, 0.05 < y < 0.4, including endpoint value；
Second functional layer with a thickness of 5nm-15nm, including endpoint value.
7. white-light LED structure according to claim 1, which is characterized in that the third functional layer is InxGa(1-x)N layers,
Wherein, 0.10 < x < 0.3, including endpoint value；
The third functional layer with a thickness of 3nm-10nm, including endpoint value.
8. white-light LED structure according to claim 1, which is characterized in that the 4th functional layer is InyGa(1-y)N layers,
Wherein, 0.05 < y < 0.4, including endpoint value；
4th functional layer with a thickness of 5nm-15nm, including endpoint value.
9. white-light LED structure according to claim 1, which is characterized in that the number of plies of the high barrier layer insert layer is 1
- 5 layers of layer, including endpoint value；
The high barrier layer insert layer with a thickness of 0.5nm-2nm, including endpoint value；
The high barrier layer insert layer is the high barrier layer insert layer of AlGaN or the high barrier layer insert layer of AlInGaN or the high base AlN
Layer insert layer, wherein Al group is divided into 0.005-0.04, and In group is divided into 0.05-0.4.
10. white-light LED structure according to claim 1, which is characterized in that the P-type layer is InxGa(1-x)N layers, wherein
0.05 < x < 0.4, including endpoint value；
The doped chemical of the P-type layer is Mg and In, wherein the doping concentration of Si is 1 × 1018/cm3-8×1018/cm3, including
Endpoint value；
The P-type layer with a thickness of 0.2 μm -1 μm, including endpoint value.
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| US6163038A (en) * | 1997-10-20 | 2000-12-19 | Industrial Technology Research Institute | White light-emitting diode and method of manufacturing the same |
| US20030080343A1 (en) * | 2000-06-07 | 2003-05-01 | Sanyo Electric Co., Ltd. | Semiconductor light-emitting device and methods for fabricating the same |
| CN210224058U (en) * | 2019-06-12 | 2020-03-31 | 江西乾照光电有限公司 | White light LED structure with high barrier layer insertion layer |
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2019
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|---|---|---|---|---|
| US6163038A (en) * | 1997-10-20 | 2000-12-19 | Industrial Technology Research Institute | White light-emitting diode and method of manufacturing the same |
| US20030080343A1 (en) * | 2000-06-07 | 2003-05-01 | Sanyo Electric Co., Ltd. | Semiconductor light-emitting device and methods for fabricating the same |
| CN210224058U (en) * | 2019-06-12 | 2020-03-31 | 江西乾照光电有限公司 | White light LED structure with high barrier layer insertion layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113394313A (en) * | 2020-03-13 | 2021-09-14 | 华为技术有限公司 | LED chip, manufacturing method thereof, display module and terminal |
| WO2021180096A1 (en) * | 2020-03-13 | 2021-09-16 | 华为技术有限公司 | Led chip and manufacturing method therefor, display module, and terminal |
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