CN110416375A - Epitaxial structure, production method and LED chip with composite electron barrier layer - Google Patents
Epitaxial structure, production method and LED chip with composite electron barrier layer Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000010410 layer Substances 0.000 claims abstract description 287
- 239000002356 single layer Substances 0.000 claims abstract description 40
- 239000004615 ingredient Substances 0.000 claims abstract description 10
- 230000012010 growth Effects 0.000 claims description 59
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 12
- 230000003247 decreasing effect Effects 0.000 claims description 6
- 230000026267 regulation of growth Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
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- 230000005428 wave function Effects 0.000 abstract description 4
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- 230000001186 cumulative effect Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Abstract
The present invention provides a kind of epitaxial structure with composite electron barrier layer, production method and LED chip, by being formed in epitaxial structure by AlxGa1‑xN/GaN superlattices electronic barrier layer, InmAlnGa1‑m‑nN single layer and InyAlzGa1‑y‑zThe composite electron barrier layer of N/GaN superlattices electronic barrier layer composition, increases electronics effective barrier height, effectively reduces electronics leakage；And reduce hole and overflow the probability of recombination of electronics, improve hole injection efficiency；In AlxGa1‑xN/GaN superlattices electronic barrier layer and InyAlzGa1‑y‑zIt is inserted into the InAlGaN single layer of high Al and high In ingredient between N/GaN superlattices electronic barrier layer, realize Stress match, band-gap tuning and reduces polarized electric field, increases wave function and is folded degree, reduce non-radiative rate, promote the luminous efficiency of LED chip entirety.
Description
Technical field
The present invention relates to light emitting diode field more particularly to a kind of epitaxial structures with composite electron barrier layer, system
Make method and LED chip.
Background technique
The luminous efficiency of LED is not still high at present, and especially with the reduction of the size of chip, current density gradually increases
Greatly, electronics is due to its lower effective mass and higher mobility, it is easier to spill into P-type layer from active layer and answer with hole
It closes, to increase ratio shared by non-radiative recombination, and then reduces luminous efficiency.Therefore design electronic barrier layer is realized to electricity
The blocking of son.
Traditional electronic barrier layer, such as AlGaN/GaN electronic barrier layer, InAlGaN/GaN superlattices electronic barrier layer,
Since it is serious by mismatch between Quantum Well, so as to cause band curvature, the effective barrier height of electronics, aggravation electricity are reduced
Son leakage；On the other hand, the effective potential barrier in higher hole hinders hole injection.
Summary of the invention
In view of this, it is an object of the present invention to: a kind of epitaxial structure with composite electron barrier layer, production method are provided
And LED chip, to solve the problems, such as that electronics leakage and hole injection are insufficient.
The technical solution adopted by the present invention are as follows:
A kind of epitaxial structure with composite electron barrier layer, including stack gradually substrate, the first type semiconductor layer, have
Active layer, composite electron barrier layer and the second type semiconductor layer；
The composite electron barrier layer includes AlxGa1-xN/GaN superlattices electronic barrier layer, InyAlzGa1-y-zN/GaN is super
The In of lattice electron barrier layer and high Al contents and high In ingredientmAlnGa1-m-nN single layer, wherein 0 < x < 1,0 < y < 1,0 < z <
1,0 < m < 1,0 < n < 1, y+z < 1, m+n < 1；
The AlxGa1-xN/GaN superlattices electronic barrier layer, InmAlnGa1-m-nN single layer and InyAlzGa1-y-zN/GaN is super
Lattice electron barrier layer stacks gradually, the AlxGa1-xN/GaN superlattices electronic barrier layer is arranged close to active layer, described
InyAlzGa1-y-zN/GaN superlattices electronic barrier layer is arranged close to the second type semiconductor layer.
Further, the In of the high Al contents and high In ingredientmAlnGa1-m-nN single layer are as follows: the InmAlnGa1-m-nN
The Al component of single layer is respectively higher than AlxGa1-xN/GaN superlattices electronic barrier layer and InyAlzGa1-y-zN/GaN superlattices electronics
The Al component on barrier layer, the InmAlnGa1-m-nThe In component of N single layer is respectively higher than AlxGa1-xN/GaN superlattices electronic blocking
Layer and InyAlzGa1-y-zThe In component of N/GaN superlattices electronic barrier layer.
Further, the AlxGa1-xAl component in N/GaN superlattices electronic barrier layer increase with growth cycle or
It reduces or remains unchanged, the InyAlzGa1-y-zThe thickness of GaN increases with growth cycle in N/GaN superlattices electronic barrier layer
It adds deduct less or remains unchanged.
Further, the AlxGa1-xAl component in N/GaN superlattices electronic barrier layer increase with growth cycle or
It reduces or remains unchanged, the InyAlzGa1-y-zAl component in N/GaN superlattices electronic barrier layer increases with growth cycle
It adds deduct less or remains unchanged.
It further, further include buffer layer and u-GaN layers, the buffer layer and u-GaN layers stack gradually and are set to substrate
And first between type semiconductor layer, buffer layer is arranged close to substrate, and u-GaN layer close to the settings of the first type semiconductor layers.
Further, the AlxGa1-xN/GaN superlattices electronic barrier layer and InyAlzGa1-y-zN/GaN superlattices electronics
The period on barrier layer is respectively 5-20.
Another technical solution used in the present invention are as follows:
A kind of LED chip, including first electrode and second electrode further include above-mentioned outer with composite electron barrier layer
Prolong structure, the first electrode is set in first type semiconductor layer, and the second electrode is set to the second type semiconductor
On layer.
Another technical solution that the present invention uses are as follows:
A kind of production method of the epitaxial structure of the epitaxial structure with composite electron barrier layer, comprising:
In successively one type semiconductor layer of growth regulation and active layer on substrate；
Deviate from the growing mixed electronic barrier layer in side of the first type semiconductor layer, the composite electron resistance in the active layer
Barrier includes AlxGa1-xN/GaN superlattices electronic barrier layer, InyAlzGa1-y-zN/GaN superlattices electronic barrier layer and high Al
The In of component and high In ingredientmAlnGa1-m-nN single layer, wherein 0 < x < 1,0 < y < 1,0 < z < 1,0 < m < 1,0 < n < 1, y+z < 1, m+
n<1；The AlxGa1-xN/GaN superlattices electronic barrier layer, InmAlnGa1-m-nN single layer and InyAlzGa1-y-zN/GaN superlattices
Electronic barrier layer stacks gradually, the AlxGa1-xN/GaN superlattices electronic barrier layer is arranged close to active layer；
In the InyAlzGa1-y-zN/GaN superlattices electronic barrier layer deviates from InmAlnGa1-m-nThe side setting the of N single layer
Two type semiconductor layers.
Further, growing mixed electronic barrier layer specifically includes:
Alternating growth AlxGa1-xN layers and several period-producer Al of GaN layerxGa1-xN/GaN superlattices electronic barrier layer；
In AlxGa1-xN/GaN superlattices electronic barrier layer grows In away from the side of active layermAlnGa1-m-nN single layer；
In InmAlnGa1-m-nN single layer deviates from AlxGa1-xThe side of N/GaN superlattices electronic barrier layer, alternating growth
InyAlzGa1-y-zN and several period-producer In of GaN layeryAlzGa1-y-zN/GaN superlattices electronic barrier layer；
Wherein, the InmAlnGa1-m-nThe Al component of N single layer is respectively higher than AlxGa1-xN/GaN superlattices electronic barrier layer
And InyAlzGa1-y-zThe Al component of N/GaN superlattices electronic barrier layer, InmAlnGa1-m-nThe In component of N single layer is respectively higher than
AlxGa1-xN/GaN superlattices electronic barrier layer and InyAlzGa1-y-zThe In component of N/GaN superlattices electronic barrier layer.
Further, growing mixed electronic barrier layer specifically includes:
At a temperature of 800-900 DEG C, it is passed through the source Ga, the source N, the source Al and H2Growth thickness is the Al of 1-5nmxGa1-xN layers；It is logical
Enter the source Ga, the source N and H2Growth thickness is the GaN layer of 1-3nm, and the 5-20 period of such alternating growth forms AlxGa1-xN/GaN
Superlattices electronic barrier layer；
At a temperature of 900-950 DEG C, it is passed through the source Ga, the source N, the source Al, the source In and N2Growth thickness is 1-5nm's
InmAlnGa1-m-nN single layer；
At a temperature of 900-950 DEG C, it is passed through the source Ga, the source N, the source Al, the source In and N2Growth thickness is 1-3nm's
InyAlzGa1-y-zN layers, it is passed through the source Ga, the source N and N2Growth thickness is the GaN layer of 1-3nm；5-20 week of such alternating growth
Phase forms InyAlzGa1-y-zN/GaN superlattices electronic barrier layer.
As can be seen from the above description:
(1) epitaxial structure of the invention, by being formed by AlxGa1-xN/GaN superlattices electronic barrier layer,
InmAlnGa1-m-nN single layer and InyAlzGa1-y-zThe composite electron barrier layer of N/GaN superlattices electronic barrier layer composition, on the one hand,
Electronics effective barrier height is increased, electronics leakage is effectively reduced；On the other hand, it reduces hole and overflows the compound general of electronics
Rate improves hole injection efficiency；In another aspect, by AlxGa1-xN/GaN superlattices electronic barrier layer and InyAlzGa1-y- zIt is inserted into the InAlGaN single layer of high Al and high In ingredient between N/GaN superlattices electronic barrier layer, plays Stress match, energy band tune
Section and the effect for reducing polarized electric field make wave function be folded degree increase, and non-radiative rate is reduced, and finally promote LED chip
Whole luminous efficiency.
(2) production method of the invention, by growing Al between active layer and the second type semiconductor layerxGa1-xN/GaN
Superlattices electronic barrier layer, InmAlnGa1-m-nN single layer and InyAlzGa1-y-zN/GaN superlattices electronic barrier layer is formed compound
Electronic barrier layer, so that manufactured epitaxial structure reaches, electronics leakage is reduced, raising, Stress match, band-gap tuning are injected in hole
Well, the effect that polarized electric field is small and rate of irradiation reduces.
(3) LED chip of the invention has the advantages that electronics is revealed less, hole injection is high, rate of irradiation is small, especially exists
In the case of small size, high current, efficiency rapid drawdown is few, and whole lighting efficiency is high.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the structural schematic diagram of the epitaxial structure with composite electron barrier layer of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the epitaxial structure with composite electron barrier layer of another embodiment of the present invention；
Fig. 3 a-3f is the structural schematic diagram of the epitaxial structure with composite electron barrier layer of the embodiment of the present invention three；
Fig. 4 is the structural schematic diagram of the LED chip of the embodiment of the present invention.
Label declaration:
1, substrate；2, the first type semiconductor layer；3, active layer；4, composite electron barrier layer；41, AlxGa1-xN/GaN is super
Lattice electron barrier layer；42,InyAlzGa1-y-zN/GaN superlattices electronic barrier layer； 43,InmAlnGa1-m-nN single layer；5, second
Type semiconductor layer；6, buffer layer；7, u-GaN layers；8, first electrode；9, second electrode.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment one
Fig. 1 and Fig. 2 are please referred to, the present embodiment provides a kind of epitaxial structures with composite electron barrier layer 4, including successively
Substrate 1, buffer layer 6, u-GaN layer 7, the first type semiconductor layer 2, active layer 3, composite electron barrier layer 4 and the second type of stacking
Semiconductor layer 5, first type semiconductor layer 2 are n type semiconductor layer, and the second type semiconductor layer 5 is p type semiconductor layer.It is described
Active layer 3 includes but is not limited to the Quantum Well being made of InGaN/GaN, and the u-GaN layer 7 is undoped GaN layer, the N
Type semiconductor layer includes but is not limited to mix silicon n type semiconductor layer.
The composite electron barrier layer 4 includes AlxGa1-xN/GaN superlattices electronic barrier layer 41, InyAlzGa1-y-zN/
The In of GaN superlattices electronic barrier layer 42 and high Al contents and high In ingredientmAlnGa1-m-nN single layer 43, wherein 0 < x < 1,0
< y < 1,0 < z < 1,0 < m < 1,0 < n < 1, y+z < 1, m+n < 1.The In of high Al contents and high In ingredientmAlnGa1-m-nN single layer plays
Stress match, band-gap tuning and the effect for reducing polarized electric field, so that wave function is folded degree increase, non-radiative rate reduces,
It is final to promote LED whole lighting efficiency.The high Al contents and high In ingredient of the present embodiment meaning refer to that Al component is respectively higher than
AlxGa1-xN/GaN superlattices electronic barrier layer 41 and InyAlzGa1-y-zThe Al component of N/GaN superlattices electronic barrier layer 42, with
And In component is respectively higher than AlxGa1-xN/GaN superlattices electronic barrier layer 41 and InyAlzGa1-y-zN/GaN superlattices electronic blocking
The In component of layer 42.
The AlxGa1-xN/GaN superlattices electronic barrier layer 41 and InyAlzGa1-y-zN/GaN superlattices electronic barrier layer 42
Period be respectively 5-20.5-20 period be it is of the invention be preferably provided with so that superlattice structure thickness is best.
The AlxGa1-xN/GaN superlattices electronic barrier layer 41, InmAlnGa1-m-nN single layer 43 and InyAlzGa1-y-zN/
GaN superlattices electronic barrier layer 42 stacks gradually, the AlxGa1-xN/GaN superlattices electronic barrier layer 41 is set close to active layer 3
It sets, the InyAlzGa1-y-zN/GaN superlattices electronic barrier layer 42 is arranged close to the second type semiconductor layer 5.
Embodiment two
Fig. 3 a-3f is please referred to, the present embodiment provides a kind of epitaxial structures with composite electron barrier layer, with above-mentioned implementation
The difference of example one is, the AlxGa1-xAl component (i.e. the value of x) in N/GaN superlattices electronic barrier layer 41 is being grown
It increases or decreases or remains unchanged with growth cycle in the process, the InyAlzGa1-y-zN/GaN superlattices electronic barrier layer 42
The thickness of middle GaN is increased or decreased or is remained unchanged with growth cycle during the growth process.
The present embodiment adjusts Al by every one or several periods of growthxGa1-xIn N/GaN superlattices electronic barrier layer
Al, Ga component, and adjust InyAlzGa1-y-zThe thickness of GaN in N/GaN, to realize different composite electron barrier layer knots
Structure.Such as:
Structure 1, AlxGa1-xAl component in N/GaN superlattices electronic barrier layer during the growth process with growth cycle by
It is cumulative to add, InyAlzGa1-y-zGaN thickness in N/GaN superlattices electronic barrier layer is protected with growth cycle during the growth process
It holds constant.Such as: in first to fourth period, InyAlzGa1-y-zGaN thickness in N/GaN superlattices electronic barrier layer is protected
Hold constant, and AlxGa1-xAl component in N/GaN superlattices electronic barrier layer gradually increases.Its " growth cycle-AlxGa1-xN/
Al component/In in GaN superlattices electronic barrier layeryAlzGa1-y-zGaN thickness in N/GaN superlattices electronic barrier layer "
Schematic diagram is as shown in Figure 3a.
Structure 2, AlxGa1-xAl component in N/GaN superlattices electronic barrier layer during the growth process with growth cycle by
It is decrescence few, InyAlzGa1-y-zGaN thickness in N/GaN superlattices electronic barrier layer is protected with growth cycle during the growth process
Hold constant, " growth cycle-AlxGa1-xAl component/In in N/GaN superlattices electronic barrier layeryAlzGa1-y-zN/GaN is super brilliant
The schematic diagram of GaN thickness in lattice electronic barrier layer " is as shown in Figure 3b.
Structure 3, AlxGa1-xAl component in N/GaN superlattices electronic barrier layer during the growth process with growth cycle by
It is decrescence few, InyAlzGa1-y-zGaN thickness in N/GaN superlattices electronic barrier layer during the growth process with growth cycle and by
It is cumulative to add, " growth cycle-AlxGa1-xAl component/In in N/GaN superlattices electronic barrier layeryAlzGa1-y-zN/GaN is super brilliant
The schematic diagram of GaN thickness in lattice electronic barrier layer " is as shown in Figure 3c.
Structure 4, AlxGa1-xAl component in N/GaN superlattices electronic barrier layer during the growth process with growth cycle by
It is decrescence few, InyAlzGa1-y-zGaN thickness in N/GaN superlattices electronic barrier layer during the growth process with growth cycle and by
It is decrescence few, " growth cycle-AlxGa1-xAl component/In in N/GaN superlattices electronic barrier layeryAlzGa1-y-zN/GaN is super brilliant
The schematic diagram of GaN thickness in lattice electronic barrier layer " is as shown in Figure 3d.
Structure 5, AlxGa1-xAl component in N/GaN superlattices electronic barrier layer during the growth process with growth cycle by
It is cumulative to add, InyAlzGa1-y-zGaN thickness in N/GaN superlattices electronic barrier layer during the growth process with growth cycle and by
It is cumulative to add, " growth cycle-AlxGa1-xAl component/In in N/GaN superlattices electronic barrier layeryAlzGa1-y-zN/GaN is super brilliant
The schematic diagram of GaN thickness in lattice electronic barrier layer " is as shown in Figure 3 e.
Structure 6, AlxGa1-xAl component in N/GaN superlattices electronic barrier layer during the growth process with growth cycle by
It is cumulative to add, InyAlzGa1-y-zGaN thickness in N/GaN superlattices electronic barrier layer during the growth process with growth cycle and by
It is decrescence few, " growth cycle-AlxGa1-xAl component/In in N/GaN superlattices electronic barrier layeryAlzGa1-y-zN/GaN is super brilliant
The schematic diagram of GaN thickness in lattice electronic barrier layer " is as illustrated in figure 3f.
It is understood that above structure is merely illustrative, rather than limitation of the present invention.
Embodiment three
The present embodiment provides a kind of epitaxial structure with composite electron barrier layer, the difference with above-described embodiment one exists
In the AlxGa1-xAl component (i.e. the value of x) in N/GaN superlattices electronic barrier layer 41 is during the growth process with growth
Period and increase or decrease or remain unchanged, the InyAlzGa1-y-zAl component in N/GaN superlattices electronic barrier layer 42
(i.e. the value of z) is increased or decreased or is remained unchanged with growth cycle during the growth process.
The present embodiment adjusts Al by every one or several periods of growthxGa1-xIn N/GaN superlattices electronic barrier layer
Al, Ga component, and adjust InyAlzGa1-y-zIn, Al, Ga component of GaN in N/GaN, to realize different composite electrons
Barrier layer structure.Specific structure example refers to above-described embodiment two, and details are not described herein again.
Example IV
Referring to FIG. 4, a kind of LED chip, including first electrode 8, second electrode 9 and any reality of above-described embodiment one to three
The epitaxial structure described in example with composite electron barrier layer is applied, the first electrode 8 is set to first type semiconductor layer 2
On, the second electrode 9 is set in second type semiconductor layer 5.The first electrode 8 is N electrode, the second electrode 9
For P electrode.The material of the N electrode includes but is not limited to Ti/Al, and the material of the P electrode includes but is not limited to Ni/Au.
Embodiment five
A kind of production method of the epitaxial structure with composite electron barrier layer, for making above-described embodiment one to three
With the epitaxial structure on composite electron barrier layer described in one embodiment, include the following steps:
S1, in successively grown buffer layer, u-GaN layers, n type semiconductor layer and active layer on substrate.
S2, Yu Suoshu active layer deviate from the growing mixed electronic barrier layer in side of n type semiconductor layer, the composite electron resistance
Barrier includes the Al successively grownxGa1-xN/GaN superlattices electronic barrier layer, InmAlnGa1-m-nN single layer and InyAlzGa1-y- zN/GaN superlattices electronic barrier layer, wherein 0 < x < 1,0 < y < 1,0 < z < 1,0 < m < 1,0 < n < 1, y+z < 1, m+n < 1；It is described
InmAlnGa1-m-nThe Al component of N single layer is respectively higher than AlxGa1-xN/GaN superlattices electronic barrier layer and InyAlzGa1-y-zN/
The Al component of GaN superlattices electronic barrier layer, InmAlnGa1-m-nThe In component of N single layer is respectively higher than AlxGa1-xN/GaN is super brilliant
Lattice electronic barrier layer and InyAlzGa1-y-zThe In component of N/GaN superlattices electronic barrier layer.
S3, Yu Suoshu InyAlzGa1-y-zN/GaN superlattices electronic barrier layer deviates from InmAlnGa1-m-nThe side of N single layer is set
Set the second type semiconductor layer.
Embodiment six
A kind of production method of the epitaxial structure with composite electron barrier layer, for making above-described embodiment one to three
With the epitaxial structure on composite electron barrier layer described in one embodiment, include the following steps:
S01, it places the substrate into MOCVD reaction chamber, is passed through H at a temperature of 1100 DEG C2About 10 minutes miscellaneous to remove surface
Matter and oxide.
S02, after being cooled to 800 DEG C, TMGa, NH are passed through3And H2, growth thickness is the GaN buffer layer of 20nm-40nm.
S03, after being warming up to 1100 DEG C or so, TMGa, NH are passed through3And H2, growth thickness is the undoped GaN layer of 2-4um,
It is i.e. u-GaN layers above-mentioned.
S04,1100 DEG C or so are maintained the temperature at, is passed through TMGa, NH3、SiH4And H2Growth thickness is (2-4um), silicon adulterates
Concentration is 1-10*1018cm-3GaN layer, i.e., above-mentioned n type semiconductor layer.
S05, after being cooled to 750-850 DEG C, TEGa, TMIn, NH are passed through3And N2, growth thickness is the InGaN amount of 2-5nm
Sub- trap；TEGa, SiH are passed through after then heating to 850-900 DEG C4、NH3And N2Growth thickness is 10-12nm, doping concentration 1-
10*1018cm-3GaN quantum build, so repeat the 5-15 period of alternating growth, formation by InGaN/GaN multiple quantum wells barrier layer
The active area of composition.
S06, at a temperature of 800-900 DEG C, be passed through TEGa, NH3, TMAl and H2Growth thickness is the Al of 1-5nmxGa1-xN
Layer；It is passed through TEGa, NH3And H2Growth thickness is the GaN layer of 1-3nm, and the 5-20 period of such alternating growth forms AlxGa1- xN/GaN superlattices electronic barrier layer；Wherein 0 < x < 1.
S07, at a temperature of 900-950 DEG C, be passed through TMGa (or TEGa), TMAl, TMIn, NH3And N2Growth thickness is 1-
The In of 5nmmAlnGa1-m-nN single layer；Wherein 0 < m < 1,0 < n < 1, m+n < 1.
S08, at a temperature of 900-950 DEG C, be passed through TMGa (or TEGa), TMAl, TMIn, NH3And N2Growth thickness is 1-
The In of 3nmyAlzGa1-y-zN layers, it is passed through TMGa (or TEGa), NH3And N2Growth thickness is the GaN layer of 1-3nm；So alternately give birth to
The long 5-20 period forms InyAlzGa1-y-zN/GaN superlattices electronic barrier layer；Wherein, 0 < y < 1,0 < z < 1, y+z < 1.
S09, at a temperature of 900-1000 DEG C, be passed through TMGa (or TEGa), CP2Mg、NH3、 N2, growth thickness 10-
50nm, doping concentration 1-10*1019cm-3P-type GaN layer, i.e. aforementioned p-type semiconductor layer.
S10, at a temperature of 750-800 DEG C, be passed through N2It is made annealing treatment, continues 20-30min.
Above-mentioned S06, S07 and S08 combine to form composite electron barrier layer, and reaction chamber growth pressure is 100-300torr.
It should be noted that above-mentioned TMGa, TEGa, NH3、SiH4、TMAl、TMIn、H2、 N2Only each reaction source and reaction
Atmosphere for example, rather than limitation of the present invention.
In conclusion the present invention is designed using special composite electron barrier layer, effectively reduces electronics leakage, enhances
Hole injection efficiency, and by AlGaN/GaN superlattices electronic barrier layer and InAlGaN/GaN superlattices electronic blocking
It is inserted into the InAlGaN/GaN single layer of high In and high Al contents between layer, reach Stress match, band-gap tuning and reduces polarized electric field
Effect, increase wave function and be folded degree, reduce non-radiative rate.Especially in small size, high current, effectively
Improve LED efficiency rapid drawdown, it is final to promote LED whole lighting efficiency.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of epitaxial structure with composite electron barrier layer, which is characterized in that including substrate, the first type half stacked gradually
Conductor layer, active layer, composite electron barrier layer and the second type semiconductor layer；
The composite electron barrier layer includes AlxGa1-xN/GaN superlattices electronic barrier layer, InyAlzGa1-y-zN/GaN superlattices
The In of electronic barrier layer and high Al contents and high In ingredientmAlnGa1-m-nN single layer, wherein 0 < x < 1,0 < y < 1,0 < z < 1,0 < m
< 1,0 < n < 1, y+z < 1, m+n < 1；
The AlxGa1-xN/GaN superlattices electronic barrier layer, InmAlnGa1-m-nN single layer and InyAlzGa1-y-zN/GaN superlattices
Electronic barrier layer stacks gradually, the AlxGa1-xN/GaN superlattices electronic barrier layer is arranged close to active layer, described
InyAlzGa1-y-zN/GaN superlattices electronic barrier layer is arranged close to the second type semiconductor layer.
2. the epitaxial structure according to claim 1 with composite electron barrier layer, which is characterized in that described
InmAlnGa1-m-nThe Al component of N single layer is respectively higher than AlxGa1-xN/GaN superlattices electronic barrier layer and InyAlzGa1-y-zN/GaN
The Al component of superlattices electronic barrier layer, the InmAlnGa1-m-nThe In component of N single layer is respectively higher than AlxGa1-xN/GaN is super brilliant
Lattice electronic barrier layer and InyAlzGa1-y-zThe In component of N/GaN superlattices electronic barrier layer.
3. the epitaxial structure according to claim 1 with composite electron barrier layer, which is characterized in that the AlxGa1-xN/
Al component in GaN superlattices electronic barrier layer is increased or decreased or is remained unchanged with growth cycle, the InyAlzGa1-y- zThe thickness of GaN is increased or decreased or is remained unchanged with growth cycle in N/GaN superlattices electronic barrier layer.
4. the epitaxial structure according to claim 1 with composite electron barrier layer, which is characterized in that the AlxGa1-xN/
Al component in GaN superlattices electronic barrier layer is increased or decreased or is remained unchanged with growth cycle, the InyAlzGa1-y- zAl component in N/GaN superlattices electronic barrier layer is increased or decreased or is remained unchanged with growth cycle.
5. the epitaxial structure according to claim 1 with composite electron barrier layer, which is characterized in that further include buffer layer
With u-GaN layers, the buffer layer and u-GaN layers are stacked gradually and are set between substrate and the first type semiconductor layer, and buffer layer leans on
Nearly substrate setting, u-GaN layers are arranged close to the first type semiconductor layer.
6. the epitaxial structure according to claim 1 with composite electron barrier layer, which is characterized in that the AlxGa1-xN/
GaN superlattices electronic barrier layer and InyAlzGa1-y-zThe period of N/GaN superlattices electronic barrier layer is respectively 5-20.
7. a kind of LED chip, including first electrode and second electrode, which is characterized in that further include claim 1-6 any one
The epitaxial structure with composite electron barrier layer, the first electrode is set in first type semiconductor layer, described
Second electrode is set in second type semiconductor layer.
8. a kind of production method of the epitaxial structure of the epitaxial structure with composite electron barrier layer characterized by comprising
In successively one type semiconductor layer of growth regulation and active layer on substrate；
Deviate from the growing mixed electronic barrier layer in side of the first type semiconductor layer, the composite electron barrier layer in the active layer
Including AlxGa1-xN/GaN superlattices electronic barrier layer, InyAlzGa1-y-zN/GaN superlattices electronic barrier layer and high Al contents
With the In of high In ingredientmAlnGa1-m-nN single layer, wherein 0 < x < 1,0 < y < 1,0 < z < 1,0 < m < 1,0 < n < 1, y+z < 1, m+n < 1；
The AlxGa1-xN/GaN superlattices electronic barrier layer, InmAlnGa1-m-nN single layer and InyAlzGa1-y-zN/GaN superlattices electronics
Barrier layer stacks gradually, the AlxGa1-xN/GaN superlattices electronic barrier layer is arranged close to active layer；
In the InyAlzGa1-y-zN/GaN superlattices electronic barrier layer deviates from InmAlnGa1-m-nSecond type is arranged in the side of N single layer
Semiconductor layer.
9. the production method of the epitaxial structure according to claim 8 with composite electron barrier layer, which is characterized in that raw
Long composite electron barrier layer specifically includes:
Alternating growth AlxGa1-xN layers and several period-producer Al of GaN layerxGa1-xN/GaN superlattices electronic barrier layer；
In AlxGa1-xN/GaN superlattices electronic barrier layer grows In away from the side of active layermAlnGa1-m-nN single layer；
In InmAlnGa1-m-nN single layer deviates from AlxGa1-xThe side of N/GaN superlattices electronic barrier layer, alternating growth
InyAlzGa1-y-zN and several period-producer In of GaN layeryAlzGa1-y-zN/GaN superlattices electronic barrier layer；
Wherein, the InmAlnGa1-m-nThe Al component of N single layer is respectively higher than AlxGa1-xN/GaN superlattices electronic barrier layer and
InyAlzGa1-y-zThe Al component of N/GaN superlattices electronic barrier layer, InmAlnGa1-m-nThe In component of N single layer is respectively higher than
AlxGa1-xN/GaN superlattices electronic barrier layer and InyAlzGa1-y-zThe In component of N/GaN superlattices electronic barrier layer.
10. the production method of the epitaxial structure according to claim 9 with composite electron barrier layer, which is characterized in that
Growing mixed electronic barrier layer specifically includes:
At a temperature of 800-900 DEG C, it is passed through the source Ga, the source N, the source Al and H2Growth thickness is the Al of 1-5nmxGa1-xN layers；It is passed through Ga
Source, the source N and H2Growth thickness is the GaN layer of 1-3nm, and the 5-20 period of such alternating growth forms AlxGa1-xN/GaN is super brilliant
Lattice electronic barrier layer；
At a temperature of 900-950 DEG C, it is passed through the source Ga, the source N, the source Al, the source In and N2Growth thickness is the In of 1-5nmmAlnGa1-m-nN
Single layer；
At a temperature of 900-950 DEG C, it is passed through the source Ga, the source N, the source Al, the source In and N2Growth thickness is the In of 1-3nmyAlzGa1-y-zN
Layer, is passed through the source Ga, the source N and N2Growth thickness is the GaN layer of 1-3nm；It in such 5-20 period of alternating growth, is formed
InyAlzGa1-y-zN/GaN superlattices electronic barrier layer.
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| US20220131043A1 (en) * | 2020-10-27 | 2022-04-28 | Nikkiso Co., Ltd. | Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element |
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| CN103367581A (en) * | 2013-07-26 | 2013-10-23 | 东南大学 | Light emitting diode with electronic barrier layer structure |
| CN109524517A (en) * | 2018-11-13 | 2019-03-26 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
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| US20090065762A1 (en) * | 2007-09-10 | 2009-03-12 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved structure |
| CN103367581A (en) * | 2013-07-26 | 2013-10-23 | 东南大学 | Light emitting diode with electronic barrier layer structure |
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