CN110165012A - A kind of photodetector structure and preparation method thereof with the anti-reflection effect of arc - Google Patents
A kind of photodetector structure and preparation method thereof with the anti-reflection effect of arc Download PDFInfo
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- CN110165012A CN110165012A CN201910574152.5A CN201910574152A CN110165012A CN 110165012 A CN110165012 A CN 110165012A CN 201910574152 A CN201910574152 A CN 201910574152A CN 110165012 A CN110165012 A CN 110165012A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
Abstract
The present invention is a kind of photodetector structure and preparation method thereof with the anti-reflection effect of arc.The structure successively includes that substrate, p-type heavily doped material layer, N-type are lightly doped material layer, N-type transition material layer, N-type and material layer, N-type heavily doped material layer and N-type Ohmic electrode are lightly doped along epitaxial growth direction；P-type Ohmic electrode is located on the p-type heavily doped material layer that N-type is lightly doped on the outside of material layer；Wherein, N-type Ohmic electrode is annular shape, positioned at the outer rim of N-type heavily doped material layer, the N-type heavily doped material layer appeared among it is photosensitive area, with a thickness of 0.1~1 μm, arcuate structure is contained in the upper surface of the photosensitive area, and the arcuate structure is arc, folded arc or concave-convex.Preparation method of the present invention is simple, and strong operability is at low cost, and while further enhancing light transmittance, can also make the more uniform of the light distribution for being incident on device inside, reduces device self-heating effect, improves quantum efficiency.
Description
Technical field
The present invention relates to a kind of photodetector structure with the anti-reflection effect of arc and preparation method thereof more particularly to one
The preparation method of kind high-responsivity avalanche photodetector, belongs to semiconductor photoelectronic device technical field.
Background technique
Ultraviolet detection technology is the dual-use photodetection to grow up after infrared and Laser Detection Technique
Technology, and ultraviolet detector is the core component of ultraviolet detection system, in fire monitoring, ultra-violet curing, ultraviolet disinfection, medical treatment
There is very important application prospect in the fields such as health care, national defence early warning, missile warning.In recent years, it is avenged based on wide bandgap semiconductor
The solid-state UV detector of avalanche photo diode (APD) causes international extensive research interest, it is intended to which substitution is largely made at present
Volume is big, expensive and breakable photomultiplier tube (PMT).
Gallium nitride (GaN), silicon carbide (SiC) APD are that be expected to can be same because having unique material and device performance advantage
Shi Shixian high-gain, high-quantum efficiency, low-dark current, low overload noise and small-signal " visible light is blind " ultraviolet detection are partly led
Body device.Common photodetector structure has: metal-semiconductor-metal (MSM) structure, PN/PIN structure, avalanche optoelectronic are visited
Survey device (APD) structure.No matter which kind of device architecture is used, is intended to improve the responsiveness of device to increase the sensitivity of detection,
Based on this, researcher has done a series of research, and the Chinese patent of Patent No. CN106784121A discloses a kind of surface
Metal electrode, is made into the periodic of interdigitation by plasmon photodetector and preparation method thereof, utilizes metal
The charge density wave of free electron and incident electromagnetic wave generate coupling in grating, lead to charge density fluctuation, cause collective
Concussion, causes to increase responsiveness while not reducing detector response speed；The China of Patent No. CN107275441A is specially
Benefit discloses a kind of preparation method of ZnO anti-reflection film photodetector, by changing the parameters systems such as sintering temperature, soaking time
For well-crystallized, smooth fine and close, function admirable ZnO sputtering target material has been gone out, the light transmittance of ZnO anti-reflection film is improved with this, is increased
Add responsiveness.Although detector responsivity has obtained a degree of improvement, with complicated process and high system
Standby cost is cost.
Summary of the invention
It is an object of the present invention to provide a kind of photoelectricity spy with the anti-reflection effect of arc for deficiency existing for current techniques
Survey device structure and preparation method thereof.The structure increases light transmittance by the way that the photosensitive area of device top is etched into arcuate structure.
Preparation method of the present invention is simple, and strong operability is at low cost, and while further enhancing light transmittance, can also make incidence
To device inside light distribution it is more uniform, avoid photo-generated carrier from largely gathering, reduce device self-heating effect, improve quantum
Efficiency.
The present invention solves technical solution used by the technical problem:
A kind of photodetector structure with the anti-reflection effect of arc, the structure successively include lining along epitaxial growth direction
Bottom, p-type heavily doped material layer, N-type are lightly doped material layer, N-type transition material layer, N-type and material layer, N-type heavy doping material are lightly doped
The bed of material and N-type Ohmic electrode；P-type Ohmic electrode is located on the p-type heavily doped material layer that N-type is lightly doped on the outside of material layer；Wherein,
N-type Ohmic electrode is annular shape, and positioned at the outer rim of N-type heavily doped material layer, the N-type heavily doped material layer appeared among it is light
Quick area, with a thickness of 0.1~1 μm, arcuate structure is contained in the upper surface of the photosensitive area, and the arcuate structure is arc, folds
Arc or concave-convex, the projected area of the arcuate structure account for the 70%~100% of upper surface area.
When upper surface is arc, the radian is greater than 0, and is less than π；Preferably between pi/2 0~π/3；The arc
Shape is inner arc or outer arc；
When the shape of upper surface is folded arc, i.e., interlaced arcuate structure, the radian is greater than 0, and less than 2 π；
Preferably between π/6~pi/2；Adjacent arcuate structure overlap proportion is 10%~30%；
When the shape of upper surface is concave-convex, i.e., concave-convex tangent arcuate structure, the radian is greater than 0, and less than 2
π；Preferably between π/6~pi/2；
The substrate, p-type heavily doped material layer be it is round table-like, radius is identical；
The N-type is lightly doped that material layer, N-type transition material layer, that material layer, N-type heavily doped material layer is lightly doped in N-type is whole
Body is trapezoidal rotary table in section；Trapezoidal interior angular region is between 4 °~30 °；
60%~95% that material layer accounts for p-type heavily doped material level product is lightly doped in the N-type；
The width of the p-type Ohmic electrode accounts for p-type heavily doped material layer and exposes the 10%~90% of width；
The width of the N-type Ohmic electrode accounts for the 2%~20% of N-type heavily doped material layer radius；
The material of the substrate is 4H-SiC, sapphire, Si or GaN；
The material of the p-type heavily doped material layer is SiC, GaO, Ala1Inb1Ga1-a1-b1As or Alx1Iny1Ga1-x1-y1N,
Component 0≤a1≤1,0≤b1≤1,0≤1-a1-b1,0≤x1≤1,0≤y1≤1, the 0≤1-x1-y1 of each element in formula are thick
Degree is 1~4 μm, and doping concentration is 1 × 1017cm-3~1 × 1020cm-3；
The material that material layer is lightly doped in the N-type is SiC, GaO, Ala2Inb2Ga1-a2-b2As or Alx2Iny2Ga1-x2-y2N,
Component 0≤a2≤1,0≤b2≤1,0≤1-a2-b2,0≤x2≤1,0≤y2≤1, the 0≤1-x2-y2 of each element in formula are thick
Degree is 0.1~2 μm, and doping concentration is 5 × 1014cm-3~1 × 1017cm-3；
The material of the N-type transition material layer is SiC, GaO, Ala3Inb3Ga1-a3-b3As or Alx3Iny3Ga1-x3-y3N, formula
Component 0≤the a3≤1,0≤b3≤1,0≤1-a3-b3 of middle each element, 0≤x3≤1,0≤y3≤1,0≤1-x3-y3, thickness
It is 0.1~2 μm, doping concentration is 1 × 1017cm-3~5 × 1018cm-3；
The material that material layer is lightly doped in the N-type is SiC, GaO, Ala4Inb4Ga1-a4-b4As or Alx4Iny4Ga1-x4-y4N,
Component 0≤a4≤1,0≤b4≤1,0≤1-a4-b4,0≤x4≤1,0≤y4≤1, the 0≤1-x4-y4 of each element in formula are thick
Degree is 0.1~2 μm, and doping concentration is 5 × 1014cm-3~1 × 1017cm-3；
The material of the N-type heavily doped material layer is SiC, GaO, Ala5Inb5Ga1-a5-b5As or Alx5Iny5Ga1-x5-y5N,
Component 0≤a5≤1,0≤b5≤1,0≤1-a5-b5,0≤x5≤1,0≤y5≤1, the 0≤1-x5-y5 of each element in formula are thick
Degree is 0.1~1 μm, and doping concentration is 1 × 1017cm-3~1 × 1020cm-3；
The material of the N-type Ohmic electrode is Cr/Au or Ti/Au；
The material of the p-type Ohmic electrode is Cr/Au or Ni/Au.
The preparation method of the photodetector structure with the anti-reflection effect of arc, this method comprises the following steps:
The first step successively cleans substrate using acetone, dehydrated alcohol, deionized water in ultrasound, aufwuchsplate court
On, it is cleaned by ultrasonic 5~10 minutes every time；
Second step, in MOCVD MBE reacting furnace, the successively epitaxial growth on the first step treated substrate surface
Material layer is lightly doped with a thickness of 1~4 μm of p-type heavily doped material layer, with a thickness of 0.1~2 μm of N-type, with a thickness of 0.1~2 μm
N-type transition material layer, material layer is lightly doped with a thickness of 0.1~2 μm of N-type, with a thickness of 0.1~1 μm of N-type heavily doped material
Layer；
Third step is carved on the N-type heavily doped material layer that second step obtains by photoresist alternating temperature technique of backflow and dry method
Etching technique makes taper table top, exposes p-type heavily doped material layer, wherein angular region is located at 4 °~30 ° in trapezoidal inclined table
Between, 60%~95% that material layer accounts for p-type heavily doped material level product is lightly doped in the N-type after etching；
4th step obtains vapor deposition preparation N-type Ohmic electrode above table top in third step, is exposing p-type heavily doped material
Layer top vapor deposition preparation p-type Ohmic electrode；
5th step has prepared the remaining photosensitive area of N-type Ohmic electrode for the 4th step N-type heavily doped material layer, has passed through light
It carves and dry etching makes arc patterns shape；
Thus a kind of photodetector structure with the anti-reflection effect of arc is obtained.
Substantive distinguishing features of the invention are as follows:
The photosensitive area of conventional epitaxial structure is planar structure, and light source incidence to plane is understood some light and is reflected into air
Device inside is not entered, finally only small part light is incident on device inside, causes optical responsivity bad, serious to restrict detection
The sensitivity of device；And the photosensitive area of epitaxial structure of the present invention is arcuate structure, according to Fresnel law it is found that incident light it is critical
Angle reduces, and can reduce the reflectivity of light, causes the light for being incident on device inside to increase significantly, and this structure can make to be incident on device
Light distribution inside part it is more uniform, avoid photo-generated carrier from largely gathering, optical responsivity and quantum efficiency obtain effectively
Improve.
The beneficial effects of the present invention are:
(1) photodetector epitaxial structure of the present invention is that the photosensitive area between N-type Ohmic electrode is etched into arcuate structure,
According to Fresnel law, reduce the critical angle of incident light as far as possible, the reflection probability of light can be reduced, can make so more
Light enter device inside, cause incident light transmissivity increase by 10%~50%, to improve the optical responsivity of device
10%~50%, so that faint light source signal all can be detected sensitively.
(2) present invention utilizes the arcuate structure of photosensitive area, the light distribution for being incident on device inside can be made more uniform, then light
Raw carrier can be evenly distributed in device gain area, avoid the crowded generation device self-heating effect of photo-generated carrier, together
When more carriers generate gain, cause quantum efficiency to increase by 10%~50%.
(3) the method for the present invention strong operability, at low cost, simple and reliable process, suitable for industrial popularization and use.
A kind of photodetector structure with the anti-reflection effect of arc of the present invention is specially adapted for opto-electronic semiconductor module,
It is particularly suitable for iii-v wide bandgap semiconductor photodiode.
Detailed description of the invention
Fig. 1 is that schematic diagram is cutd open in the epitaxial structure side of the photodetector of prior art Plays, i.e., it is anti-reflection not have arc
Structure.
Fig. 2 is that there is the present invention a kind of structure side of embodiment of photodetector structure of the anti-reflection effect of arc to cut open signal
Figure.
Fig. 3 is the complete p-type heavily doped material layer of 1 standard photodetector epitaxial growth of embodiment, material layer, N is lightly doped in N-type
Type transition material layer, N-type are lightly doped the structure side after material layer and N-type heavily doped material layer and cut open schematic diagram.
Fig. 4 is product shown in Fig. 3 of embodiment 1, the knot by photoresist alternating temperature technique of backflow, after etching inclined table
Cut open schematic diagram in structure side.
Fig. 5 is a kind of photodetector structure schematic top plan view of the anti-reflection effect of arc used in Example 1.
Fig. 6 is conventional planar epitaxial structure and the photodetector structure with a kind of anti-reflection effect of arc in embodiment 1
The surface of intensity distribution；Wherein Fig. 6 a is the surface of intensity distribution of conventional planar epitaxial structure photodetector structure；Fig. 6 b is to implement
The surface of intensity distribution of photodetector structure in example 1 with a kind of anti-reflection effect of arc；
Fig. 7 is that schematic diagram is cutd open in a kind of photodetector structure side of the anti-reflection effect of arc used in embodiment 2.
Fig. 8 is a kind of photodetector structure schematic top plan view of the anti-reflection effect of arc used in embodiment 2.
Fig. 9 is that schematic diagram is cutd open in a kind of photodetector structure side of the anti-reflection effect of arc used in embodiment 3.
Wherein, material layer, 104.N type transition material is lightly doped in 101. substrate, 102.P type heavily doped material layer, 103.N type
Material layer, 106.N type heavily doped material layer, 107.P type Ohmic electrode, 108.N type Ohmic electrode is lightly doped in layer, 105.N type.
Specific embodiment
Below with reference to examples and drawings, the invention will be further described, but does not want in this, as to the application right
Ask the restriction of protection scope.
A kind of photodetector structure (abbreviation epitaxial structure, referring to fig. 2) with the anti-reflection effect of arc of the present invention along
Epitaxial growth direction successively includes that material layer 103, N-type transition material is lightly doped in substrate 101, p-type heavily doped material layer 102, N-type
Material layer 105, N-type heavily doped material layer 106, N-type Ohmic electrode 108 and p-type Ohmic electrode 107 is lightly doped in layer 104, N-type；Institute
Stating N-type heavily doped material layer 106 is photosensitive area, with a thickness of 0.1~1 μm, according to different device structure design demands, upper surface
Shape is that arc (radian is greater than 0, and less than 2 π, preferably between π/6~3 pi/2s), folded arc, concave-convex etc. have cambered surface knot
The irregular pattern of structure.
The material of substrate 101 described in epitaxial structure of the present invention can be, but not limited to, 4H-SiC, sapphire, Si or GaN；
The substrate, p-type heavily doped material layer be it is round table-like, radius is identical；
The N-type is lightly doped that material layer 103, N-type transition material layer 104, that material layer 105, N-type is lightly doped in N-type is heavily doped
The tapered rotary table of miscellaneous material layer 106 (section by center is trapezoidal)；Trapezoidal interior angular region is between 4 °~30 °；
The p-type Ohmic electrode 107 accounts for p-type heavily doped material layer 102 and exposes the 10%~90% of width；(explanation,
The distance of outer in i.e. circular p-type Ohmic electrode 107, divided by (material is lightly doped in radius-N-type of p-type heavily doped material layer 102
The radius of the bed of material 103) obtained ratio)
The width (distance of outer in i.e.) of the N-type Ohmic electrode 108 accounts for 106 radius of N-type heavily doped material layer
2%~20%；
The material of p-type heavily doped material layer 102 described in epitaxial structure of the present invention is SiC, GaO, Ala1Inb1Ga1-a1-b1As or
Alx1Iny1Ga1-x1-y1N, the component 0≤a1≤1,0≤b1≤1,0≤1-a1-b1,0≤x1≤1,0≤y1 of each element in formula≤
1,0≤1-x1-y1, with a thickness of 1~4 μm, doping concentration is 1 × 1017cm-3~1 × 1020cm-3；
The material that material layer 103 is lightly doped in N-type described in epitaxial structure of the present invention is SiC, GaO, Ala2Inb2Ga1-a2-b2As or
Alx2Iny2Ga1-x2-y2N, the component 0≤a2≤1,0≤b2≤1,0≤1-a2-b2,0≤x2≤1,0≤y2 of each element in formula≤
1,0≤1-x2-y2, with a thickness of 0.1~2 μm, doping concentration is 5 × 1014cm-3~1 × 1017cm-3；
The material of N-type transition material layer 104 described in epitaxial structure of the present invention is SiC, GaO, Ala3Inb3Ga1-a3-b3As or
Alx3Iny3Ga1-x3-y3N, the component 0≤a3≤1,0≤b3≤1,0≤1-a3-b3,0≤x3≤1,0≤y3 of each element in formula≤
1,0≤1-x3-y3, with a thickness of 0.1~2 μm, doping concentration is 1 × 1017cm-3~5 × 1018cm-3；
The material that material layer 105 is lightly doped in N-type described in epitaxial structure of the present invention is SiC, GaO, Ala4Inb4Ga1-a4-b4As or
Alx4Iny4Ga1-x4-y4N, the component 0≤a4≤1,0≤b4≤1,0≤1-a4-b4,0≤x4≤1,0≤y4 of each element in formula≤
1,0≤1-x4-y4, with a thickness of 0.1~2 μm, doping concentration is 5 × 1014cm-3~1 × 1017cm-3；
The material of N-type heavily doped material layer 106 described in epitaxial structure of the present invention is SiC, GaO, Ala5Inb5Ga1-a5-b5As or
Alx5Iny5Ga1-x5-y5N, the component 0≤a5≤1,0≤b5≤1,0≤1-a5-b5,0≤x5≤1,0≤y5 of each element in formula≤
1,0≤1-x5-y5, with a thickness of 0.1~1 μm, doping concentration is 1 × 1017cm-3~1 × 1020cm-3；
The material of the N-type Ohmic electrode 108 is Cr/Au or Ti/Au；
The material of the p-type Ohmic electrode 107 is Cr/Au or Ni/Au.
A kind of the step of preparation method of the photodetector structure with the anti-reflection effect of arc of the present invention, this method, is such as
Under:
The first step successively cleans substrate using acetone, dehydrated alcohol, deionized water in ultrasound, aufwuchsplate court
On, it is cleaned by ultrasonic 5~10 minutes every time, to remove the foreign matter for being attached to 101 surface of substrate；
Second step, in MOCVD MBE reacting furnace, the successively epitaxial growth on the first step treated substrate surface
It is 1 × 10 with a thickness of 1~4 μm, doping concentration17cm-3~1 × 1020cm-3P-type heavily doped material layer 102, with a thickness of 0.1~2
μm, doping concentration be 5 × 1014cm-3~1 × 1017cm-3N-type material layer 103 is lightly doped, with a thickness of 0.1~2 μm, doping it is dense
Degree is 1 × 1017cm-3~5 × 1018cm-3N-type transition material layer 104, with a thickness of 0.1~2 μm, doping concentration be 5 ×
1014cm-3~1 × 1017cm-3N-type material layer 105 is lightly doped, with a thickness of 0.1~1 μm, doping concentration be 1 × 1017cm-3~1
×1020cm-3N-type heavily doped material layer 106；
Third step by photoresist alternating temperature technique of backflow and is done on the N-type heavily doped material layer 106 that second step obtains
Method etching technics makes inclined table, exposes p-type heavily doped material layer 102, wherein angular region is located in trapezoidal inclined table
Between 4 °~30 °, 60%~95% that material layer 103 accounts for 102 area of p-type heavily doped material layer is lightly doped in the N-type after etching；
4th step obtains vapor deposition preparation N-type Ohmic electrode 108 above table top N-type heavily doped material layer 106 in third step,
Exposing vapor deposition preparation p-type Ohmic electrode 107 above p-type heavily doped material layer 102；
5th step has prepared the remaining photosensitive area of N-type Ohmic electrode 108 for the 4th step N-type heavily doped material layer 106,
Arc patterns shape is made by photoetching and dry etching, according to different device structure design demands, upper surface shape is
Arc (radian is greater than 0, and less than 2 π, preferably between π/6~3 pi/2s), folded arc, concave-convex etc. have globoidal structure not
Regular pattern；
Thus a kind of photodetector structure with the anti-reflection effect of arc is obtained.
By we have discovered that, since most of probe source is not source of parallel light, then planar structure can exist it is tight
The reflex of weight, according to Fresnel law, can greatly increase light transmittance if sensitive detection parts photosensitive area is made into arcuate structure,
Anti-reflection film complex process steps are prepared to save.
The present invention reduces reflectivity, increases light source using the critical angle for reducing incident light with the anti-reflection structure of arc
Transmissivity, thus enhance the optical responsivity of device, detectivity of the Lai Tigao detector for small-signal light source.
Fig. 1 is that schematic diagram is cutd open in the epitaxial structure side of the photodetector of prior art Plays, along epitaxial growth direction
It successively include: substrate 101, p-type heavily doped material layer 102, that material layer 103, N-type transition material layer 104, N-type is lightly doped in N-type is light
Dopant material layer 105, N-type heavily doped material layer 106, N-type Ohmic electrode 108 and p-type Ohmic electrode 107.
Fig. 2 is that there is the present invention a kind of structure side of embodiment of photodetector structure of the anti-reflection effect of arc to cut open signal
Figure successively includes: that material layer 103, N-type is lightly doped in substrate 101, p-type heavily doped material layer 102, N-type along epitaxial growth direction
Material layer 105, N-type heavily doped material layer 106, N-type Ohmic electrode 108 and p-type ohm electricity is lightly doped in transition material layer 104, N-type
Pole 107.
Fig. 3 is 1 standard photodetector of embodiment along the complete p-type heavily doped material layer 102 of 101 epitaxial growth of substrate, N-type
The knot that material layer 103, N-type transition material layer 104, N-type are lightly doped after material layer 105 and N-type heavily doped material layer 106 is lightly doped
Cut open schematic diagram in structure side.
Fig. 4 is product shown in Fig. 3 of embodiment 1, the knot by photoresist alternating temperature technique of backflow, after etching inclined table
Schematic diagram is cutd open in structure side, successively includes: that material is lightly doped in substrate 101, p-type heavily doped material layer 102, N-type along epitaxial growth direction
Material layer 105 and N-type heavily doped material layer 106 is lightly doped in the bed of material 103, N-type transition material layer 104, N-type.
Fig. 5 is a kind of photodetector structure schematic top plan view of the anti-reflection effect of arc used in Example 1, by extroversion
It inside successively include: that material layer 103, N-type transition material layer is lightly doped in p-type Ohmic electrode 107, p-type heavily doped material layer 102, N-type
104, material layer 105, N-type heavily doped material layer 106 and N-type Ohmic electrode 108 is lightly doped in N-type.
Fig. 6 is the light of the photodetector structure in conventional planar epitaxial structure and embodiment 1 with the anti-reflection effect of arc
Strong distribution map, for Cong Tuzhong it is apparent that for conventional planar epitaxial structure, light is incident on master after device inside
It is gathered in device middle position, and after using the anti-reflection structure of arc, incident light is relatively more equal in the distribution of device inside
It is even, effectively photo-generated carrier is avoided largely to gather, reduces device self-heating effect caused by carrier accumulation, make more carriers
Collide ionization, improves the optical responsivity and quantum efficiency of detector.
Fig. 7 is that schematic diagram is cutd open in a kind of photodetector structure side of the anti-reflection effect of arc used in embodiment 2, along outer
Prolong the direction of growth successively and include: substrate 101, p-type heavily doped material layer 102, N-type and material layer 103, N-type transition material is lightly doped
Material layer 105, N-type heavily doped material layer 106, N-type Ohmic electrode 108 and p-type Ohmic electrode 107 is lightly doped in layer 104, N-type.
Fig. 8 is a kind of photodetector structure schematic top plan view of the anti-reflection effect of arc used in embodiment 2, by extroversion
It inside successively include: that material layer 103, N-type transition material layer is lightly doped in p-type Ohmic electrode 107, p-type heavily doped material layer 102, N-type
104, material layer 105, N-type heavily doped material layer 106 and N-type Ohmic electrode 108 is lightly doped in N-type.
Fig. 9 is that schematic diagram is cutd open in a kind of photodetector structure side of the anti-reflection effect of arc used in embodiment 3, along outer
Prolong the direction of growth successively and include: substrate 101, p-type heavily doped material layer 102, N-type and material layer 103, N-type transition material is lightly doped
Material layer 105, N-type heavily doped material layer 106, N-type Ohmic electrode 108 and p-type Ohmic electrode 107 is lightly doped in layer 104, N-type.
Embodiment 1
A kind of photodetector structure with the anti-reflection effect of arc of the present embodiment, the epitaxial structure is along epitaxial growth
Direction successively includes: that material layer 103, N-type transition material layer 104, N is lightly doped in substrate 101, p-type heavily doped material layer 102, N-type
Material layer 105, N-type heavily doped material layer 106, N-type Ohmic electrode 108 and p-type Ohmic electrode 107 is lightly doped in type, wherein N-type weight
Dopant material layer 106 is 1 × 10 with a thickness of 0.3 μm, doping concentration19cm-3, the shape of photosensitive area is the single recessed of the radian of π/3
Shape cambered surface, the projected area of arcuate structure account for the 100% of upper surface area.Wherein, the diameter of substrate 101 is 800 μm, and N-type is light
The diameter of dopant material layer 103 is 700 μm, and the width of p-type Ohmic electrode 107 is 50 μm, and the width of N-type Ohmic electrode 108 is
50μm。
Among the above, substrate 101 is 4H-SiC；The material of p-type heavily doped material layer 102 be SiC, with a thickness of 3 μm, doping it is dense
Degree is 1 × 1019cm-3；N-type is lightly doped 103 material of material layer and is SiC, is 1 × 10 with a thickness of 0.3 μm, doping concentration15cm-3；N
104 material of type transition material layer is SiC, is 1 × 10 with a thickness of 0.1 μm, doping concentration18cm-3；Material layer 105 is lightly doped in N-type
Material is SiC, is 1 × 10 with a thickness of 0.3 μm, doping concentration15cm-3；106 material of N-type heavily doped material layer be SiC, with a thickness of
0.3 μm, doping concentration be 1 × 1019cm-3；The material of N-type Ohmic electrode 108 is Ti/Au；The material of p-type Ohmic electrode 107 is
Ni/Au。
A kind of above-mentioned photodetector structure with the anti-reflection effect of arc, preparation method are as follows:
The first step successively cleans substrate using acetone, dehydrated alcohol, deionized water in ultrasound, aufwuchsplate court
On, it is cleaned by ultrasonic 8 minutes every time, to remove the foreign matter for being attached to 101 surface of substrate；
Second step, in MOCVD reacting furnace, on the first step treated substrate surface successively epitaxial growth with a thickness of 3 μ
M, doping concentration is 1 × 1019cm-3Silicon carbide p-type heavily doped material layer 102, with a thickness of 0.3 μm, doping concentration be 1 ×
1015cm-3Silicon carbide N type material layer 103 is lightly doped, with a thickness of 0.2 μm, doping concentration be 1 × 1018cm-3N-type transition material
The bed of material 104 is 1 × 10 with a thickness of 0.3 μm, doping concentration15cm-3N-type material layer 105 is lightly doped, with a thickness of 0.3 μm, doping
Concentration is 1 × 1019cm-3N-type heavily doped material layer 106, growth temperature be 1500 DEG C, air pressure 80mbar；
Third step by photoresist alternating temperature technique of backflow and is done on the N-type heavily doped material layer 106 that second step obtains
Method etching technics makes inclined table, exposes p-type heavily doped material layer 102, wherein trapezoidal inclined table interior angle is 8 °, is carved
89% that material layer 103 accounts for p-type heavily doped material level product 102 is lightly doped in N-type after erosion；
4th step obtains vapor deposition preparation N-type Ohmic electrode 108 above table top N-type heavily doped material layer 106 in third step,
Exposing vapor deposition preparation p-type Ohmic electrode 107 above p-type heavily doped material layer 102, wherein p-type Ohmic electrode 107 accounts for p-type
Heavily doped material layer 102 exposes the 50% of width, and p-type Ohmic electrode 107 and N-type Ohmic electrode 108 are annular shape；
5th step has prepared the remaining photosensitive area of N-type Ohmic electrode 108 for the 4th step N-type heavily doped material layer 106,
By coating photoresist, exposure and imaging will not need the local local light for photoresist protection is carried out, needing to etch of etching
Photoresist removal, then uses ICP dry etching, is made by the etching power of the rate travel and ICP equipment that adjust objective table
Make arc patterns shape, according to device structure design demand, photosensitive area upper surface shape is the concave-shaped arc surface of the radian of π/3；
Thus a kind of photodetector structure with the anti-reflection effect of arc of the present embodiment is obtained.
Fig. 6 is light distribution schematic diagram, and Cong Tuzhong is it is apparent that for conventional planar epitaxial structure, light
It is incident on device inside and is mainly gathered in device middle position later, and after using the anti-reflection structure of arc, incident light is in device
Internal distribution is relatively more uniform, effectively photo-generated carrier is avoided largely to gather, improves the optical responsivity and quantum of detector
Efficiency.
Embodiment 2
A kind of photodetector structure with the anti-reflection effect of arc of the present embodiment, the epitaxial structure is along epitaxial growth
Direction successively includes: that material layer 103, N-type transition material layer 104, N is lightly doped in substrate 101, p-type heavily doped material layer 102, N-type
Material layer 105, N-type heavily doped material layer 106, N-type Ohmic electrode 108 and p-type Ohmic electrode 107 is lightly doped in type, wherein N-type weight
Dopant material layer 106 is 1 × 10 with a thickness of 0.3 μm, doping concentration19cm-3, the shape of photosensitive area is that the radian bumps of π/4 are alternate
Cambered surface, wherein the diameter (i.e. the diameter of circular arc itself) of each cambered surface be 100 μm, the projected area of arcuate structure accounts for upper surface
The 95% of area, adjacent concave-shaped arc surface and convex-shaped arc surface are just tangent.
Among the above, substrate 101 is sapphire；The material of p-type heavily doped material layer 102 is Al0.4Ga0.6N, with a thickness of 2.5 μ
M, doping concentration is 2 × 1018cm-3；It is Al that 103 material of material layer, which is lightly doped, in N-type0.4Ga0.6N, with a thickness of 0.2 μm, doping concentration
It is 1 × 1016cm-3；104 material of N-type transition material layer is Al0.4Ga0.6It N, is 1 × 10 with a thickness of 0.1 μm, doping concentration18cm-3；
It is Al that 105 material of material layer, which is lightly doped, in N-type0.4Ga0.6It N, is 1 × 10 with a thickness of 0.2 μm, doping concentration16cm-3；N-type heavy doping
106 material of material layer is Al0.45Ga0.55It N, is 2 × 10 with a thickness of 0.3 μm, doping concentration18cm-3；The material of N-type Ohmic electrode 108
Matter is Cr/Au；The material of p-type Ohmic electrode 107 is Cr/Au.
A kind of above-mentioned photodetector structure with the anti-reflection effect of arc, preparation method are as follows:
The first step successively cleans substrate using acetone, dehydrated alcohol, deionized water in ultrasound, aufwuchsplate court
On, it is cleaned by ultrasonic 8 minutes every time, to remove the foreign matter for being attached to 101 surface of substrate；
Second step, in MOCVD reacting furnace, on the first step treated substrate surface successively epitaxial growth with a thickness of
2.5 μm, doping concentration be 2 × 1018cm-3Al0.4Ga0.6N material layer 102, with a thickness of 0.2 μm, doping concentration be 1 ×
1016cm-3Al0.4Ga0.6N material layer 103 is 1 × 10 with a thickness of 0.1 μm, doping concentration18cm-3Al0.4Ga0.6N material layer
104, it is 1 × 10 with a thickness of 0.2 μm, doping concentration16cm-3Al0.4Ga0.6N material layer 105, with a thickness of 0.3 μm, doping concentration
It is 2 × 1018cm-3Al0.45Ga0.55N material layer 106, growth temperature are 970 DEG C, air pressure 90mbar；
Third step by photoresist alternating temperature technique of backflow and is done on the N-type heavily doped material layer 106 that second step obtains
Method etching technics makes inclined table, exposes p-type heavily doped material layer 102, wherein trapezoidal inclined table interior angle is 8 °, is carved
89% that material layer 103 accounts for p-type heavily doped material level product 102 is lightly doped in N-type after erosion；
4th step obtains vapor deposition preparation N-type Ohmic electrode 108 above table top N-type heavily doped material layer 106 in third step,
Exposing vapor deposition preparation p-type Ohmic electrode 107 above p-type heavily doped material layer 102, wherein p-type Ohmic electrode 107 accounts for p-type
Heavily doped material layer 102 exposes the 50% of width；
5th step has prepared the remaining photosensitive area of N-type Ohmic electrode 108 for the 4th step N-type heavily doped material layer 106,
By coating photoresist, exposure and imaging will not need the local local light for photoresist protection is carried out, needing to etch of etching
Photoresist removal, then uses ICP dry etching, is made by the etching power of the rate travel and ICP equipment that adjust objective table
Make convex patterned shape；Then sample is coated into photoresist again, exposure and imaging, by convex pattern structure with carrying out photoetching
Glue protection, the local photoresist removal for needing to etch, equally uses ICP dry etching, by the rate travel for adjusting objective table
Female pattern shape is made with the etching power of ICP equipment, obtains the pattern form of device structure design demand, photosensitive area
Shape be the concave-convex alternate cambered surface of the radian of π/4；
Thus a kind of photodetector structure with the anti-reflection effect of arc of the present embodiment is obtained.
Embodiment 3
The present embodiment each section composition and connection are with embodiment 1, the difference is that wherein top N-type in the present embodiment
The shape of the photosensitive area of heavily doped material layer 106 is the superimposed globoidal structure of the concave curved surface of the radian of π/6, wherein each arc
The diameter in face is 150 μm, is overlapped 10% between adjacent cambered surface, and the projected area of arcuate structure accounts for the 98% of upper surface area,
The more current planar structure of the transmissivity of incident light increases by 20%, to improve the optical responsivity 10% of device.
Above-described embodiment can reach, and reduce the light reflectivity on surface, increase the transmissivity of light, and the light for improving detector is rung
Response and sensitivity, and the method for the present invention strong operability, simple process and low cost, it is easy to accomplish.
Raw material according to the present invention can be obtained by known approach, and the operating procedure in preparation method is this skill
What the technical staff in art field will appreciate that.
The present invention does not address place and is suitable for the prior art.
Claims (5)
1. a kind of photodetector structure with the anti-reflection effect of arc, it is characterized in that the structure along epitaxial growth direction successively
Material layer, N-type transition material layer, N-type is lightly doped including substrate, p-type heavily doped material layer, N-type, material layer, N-type weight is lightly doped
Dopant material layer and N-type Ohmic electrode；P-type Ohmic electrode is located at the p-type heavily doped material layer that N-type is lightly doped on the outside of material layer
On；Wherein, N-type Ohmic electrode is annular shape, positioned at the outer rim of N-type heavily doped material layer, the N-type heavy doping material that appears among it
The bed of material is photosensitive area, and with a thickness of 0.1~1 μm, arcuate structure is contained in the upper surface of the photosensitive area, the arcuate structure
Projected area accounts for the 70%~100% of upper surface area.
2. as described in claim 1 with the photodetector structure of the anti-reflection effect of arc, it is characterized in that the arc knot
Structure is arc, folded arc or concave-convex；
When upper surface is arc, the radian is greater than 0, and is less than π；Preferably between pi/2 0~π/3；The arc is
Inner arc or outer arc；
When the shape of upper surface is folded arc, i.e., interlaced arcuate structure, the radian is greater than 0, and less than 2 π；It is preferred that
Between π/6~pi/2；Adjacent arcuate structure overlap proportion is 10%~30%；
When the shape of upper surface is concave-convex, i.e., concave-convex tangent arcuate structure, the radian is greater than 0, and less than 2 π；It is excellent
It is selected as between π/6~pi/2.
3. as described in claim 1 with the photodetector structure of the anti-reflection effect of arc, it is characterized in that the substrate, P
Type heavily doped material layer be it is round table-like, radius is identical；
The N-type is lightly doped that material layer is lightly doped in material layer, N-type transition material layer, N-type, N-type heavily doped material layer is integrally in
Section is trapezoidal rotary table；Trapezoidal interior angular region is between 4 °~30 °；
60%~95% that material layer accounts for p-type heavily doped material level product is lightly doped in the N-type；
The width of the p-type Ohmic electrode accounts for p-type heavily doped material layer and exposes the 10%~90% of width；
The width of the N-type Ohmic electrode accounts for the 2%~20% of N-type heavily doped material layer radius.
4. as described in claim 1 with the photodetector structure of the anti-reflection effect of arc, it is characterized in that the material of the substrate
Matter is 4H-SiC, sapphire, Si or GaN；
The material of the p-type heavily doped material layer is SiC, GaO, Ala1Inb1Ga1-a1-b1As or Alx1Iny1Ga1-x1-y1N, it is each in formula
Component 0≤a1≤1,0≤b1≤1,0≤1-a1-b1,0≤x1≤1,0≤y1≤1, the 0≤1-x1-y1 of element, with a thickness of 1~
4 μm, doping concentration is 1 × 1017cm-3~1 × 1020cm-3；
The material that material layer is lightly doped in the N-type is SiC, GaO, Ala2Inb2Ga1-a2-b2As or Alx2Iny2Ga1-x2-y2N, it is each in formula
Component 0≤a2≤1,0≤b2≤1,0≤1-a2-b2,0≤x2≤1,0≤y2≤1, the 0≤1-x2-y2 of element, with a thickness of 0.1
~2 μm, doping concentration is 5 × 1014cm-3~1 × 1017cm-3；
The material of the N-type transition material layer is SiC, GaO, Ala3Inb3Ga1-a3-b3As or Alx3Iny3Ga1-x3-y3N, each member in formula
Component 0≤a3≤1,0≤b3≤1,0≤1-a3-b3,0≤x3≤1,0≤y3≤1, the 0≤1-x3-y3 of element, with a thickness of 0.1~
2 μm, doping concentration is 1 × 1017cm-3~5 × 1018cm-3；
The material that material layer is lightly doped in the N-type is SiC, GaO, Ala4Inb4Ga1-a4-b4As or Alx4Iny4Ga1-x4-y4N, it is each in formula
Component 0≤a4≤1,0≤b4≤1,0≤1-a4-b4,0≤x4≤1,0≤y4≤1, the 0≤1-x4-y4 of element, with a thickness of 0.1
~2 μm, doping concentration is 5 × 1014cm-3~1 × 1017cm-3；
The material of the N-type heavily doped material layer is SiC, GaO, Ala5Inb5Ga1-a5-b5As or Alx5Iny5Ga1-x5-y5N, it is each in formula
Component 0≤a5≤1,0≤b5≤1,0≤1-a5-b5,0≤x5≤1,0≤y5≤1, the 0≤1-x5-y5 of element, with a thickness of 0.1
~1 μm, doping concentration is 1 × 1017cm-3~1 × 1020cm-3；
The material of the N-type Ohmic electrode is Cr/Au or Ti/Au；
The material of the p-type Ohmic electrode is Cr/Au or Ni/Au.
5. the preparation method of the photodetector structure with the anti-reflection effect of arc, this method include as described in claim 1
Following steps:
The first step successively cleans substrate using acetone, dehydrated alcohol, deionized water in ultrasound, and growth is face-up, often
Secondary ultrasonic cleaning 5~10 minutes；
Second step, in MOCVD MBE reacting furnace, the successively epitaxial growth thickness on the first step treated substrate surface
Material layer is lightly doped for 1~4 μm of p-type heavily doped material layer, with a thickness of 0.1~2 μm of N-type, with a thickness of 0.1~2 μm of N-type
Material layer is lightly doped, with a thickness of 0.1~2 μm of N-type with a thickness of 0.1~1 μm of N-type heavily doped material layer in transition material layer；
Third step passes through photoresist alternating temperature technique of backflow and dry etching work on the N-type heavily doped material layer that second step obtains
Skill make taper table top, expose p-type heavily doped material layer, wherein in trapezoidal inclined table angular region be located at 4 °~30 ° it
Between, 60%~95% that material layer accounts for p-type heavily doped material level product is lightly doped in the N-type after etching；
4th step obtains vapor deposition preparation N-type Ohmic electrode above table top in third step, on exposing p-type heavily doped material layer
Side's vapor deposition preparation p-type Ohmic electrode；
5th step has prepared the remaining photosensitive area of N-type Ohmic electrode for the 4th step N-type heavily doped material layer, by photoetching and
Dry etching makes arc patterns shape；
Thus a kind of photodetector structure with the anti-reflection effect of arc is obtained.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676327A (en) * | 2019-09-05 | 2020-01-10 | 中国电子科技集团公司第十三研究所 | Ultraviolet detector integrated with antireflection film layer and preparation method thereof |
| CN110690235A (en) * | 2019-09-05 | 2020-01-14 | 中国电子科技集团公司第十三研究所 | Detector array chip and preparation method thereof |
| WO2023087376A1 (en) * | 2021-11-18 | 2023-05-25 | 中国科学院长春光学精密机械与物理研究所 | Photoelectric detector having light-splitting structure and preparation method therefor |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11195810A (en) * | 1997-12-26 | 1999-07-21 | Sanyo Electric Co Ltd | Semiconductor light receiving element |
| JP2000232234A (en) * | 1999-02-12 | 2000-08-22 | Kanegafuchi Chem Ind Co Ltd | Silicon thin film photoelectric conversion device |
| CN107180889A (en) * | 2017-06-27 | 2017-09-19 | 上海集成电路研发中心有限公司 | A kind of quantum trap infrared detector for improving absorptivity and preparation method thereof |
| CN108231919A (en) * | 2017-12-31 | 2018-06-29 | 厦门大学 | A kind of silicon carbide avalanche photodetector with graphene transparent electrode |
| CN108400197A (en) * | 2018-04-28 | 2018-08-14 | 厦门大学 | 4H-SiC UV photodetectors with spherical cap structure and preparation method |
| CN109037385A (en) * | 2018-08-09 | 2018-12-18 | 镇江镓芯光电科技有限公司 | A kind of ultraviolet avalanche photodiode |
| US20190058073A1 (en) * | 2017-08-18 | 2019-02-21 | Hamamatsu Photonics K.K. | Photodetection element |
| CN209880636U (en) * | 2019-06-28 | 2019-12-31 | 河北工业大学 | Photoelectric detector structure with arc anti-reflection effect |
-
2019
- 2019-06-28 CN CN201910574152.5A patent/CN110165012A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11195810A (en) * | 1997-12-26 | 1999-07-21 | Sanyo Electric Co Ltd | Semiconductor light receiving element |
| JP2000232234A (en) * | 1999-02-12 | 2000-08-22 | Kanegafuchi Chem Ind Co Ltd | Silicon thin film photoelectric conversion device |
| CN107180889A (en) * | 2017-06-27 | 2017-09-19 | 上海集成电路研发中心有限公司 | A kind of quantum trap infrared detector for improving absorptivity and preparation method thereof |
| US20190058073A1 (en) * | 2017-08-18 | 2019-02-21 | Hamamatsu Photonics K.K. | Photodetection element |
| CN108231919A (en) * | 2017-12-31 | 2018-06-29 | 厦门大学 | A kind of silicon carbide avalanche photodetector with graphene transparent electrode |
| CN108400197A (en) * | 2018-04-28 | 2018-08-14 | 厦门大学 | 4H-SiC UV photodetectors with spherical cap structure and preparation method |
| CN109037385A (en) * | 2018-08-09 | 2018-12-18 | 镇江镓芯光电科技有限公司 | A kind of ultraviolet avalanche photodiode |
| CN209880636U (en) * | 2019-06-28 | 2019-12-31 | 河北工业大学 | Photoelectric detector structure with arc anti-reflection effect |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676327A (en) * | 2019-09-05 | 2020-01-10 | 中国电子科技集团公司第十三研究所 | Ultraviolet detector integrated with antireflection film layer and preparation method thereof |
| CN110690235A (en) * | 2019-09-05 | 2020-01-14 | 中国电子科技集团公司第十三研究所 | Detector array chip and preparation method thereof |
| WO2023087376A1 (en) * | 2021-11-18 | 2023-05-25 | 中国科学院长春光学精密机械与物理研究所 | Photoelectric detector having light-splitting structure and preparation method therefor |
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