CN103956404B - A kind of Radix Rumicis photodetector of photodetector preparation method and preparation - Google Patents
A kind of Radix Rumicis photodetector of photodetector preparation method and preparation Download PDFInfo
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- CN103956404B CN103956404B CN201410131694.2A CN201410131694A CN103956404B CN 103956404 B CN103956404 B CN 103956404B CN 201410131694 A CN201410131694 A CN 201410131694A CN 103956404 B CN103956404 B CN 103956404B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 230000007704 transition Effects 0.000 claims abstract description 10
- 230000012010 growth Effects 0.000 claims abstract description 9
- 238000002161 passivation Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 11
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 description 9
- 239000002210 silicon-based material Substances 0.000 description 5
- 238000002835 absorbance Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- -1 SOI Chemical compound 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The preparation method that the invention discloses a kind of photodetector, comprises the steps: to grow one layer of p-GaN in the photosurface of photodetector structure as transition zone; Described transition zone grows the one layer of p-GaN seed layer as structure structure again; Be rapidly heated one layer of p-GaN of growth after having grown seed layer, forms structure photosurface again. The beneficial effects of the present invention is: the preparation method providing a kind of Radix Rumicis photodetector, high efficient and reliable, by at photodetector surfaces structure again, break the restriction of Fresnel reflection coefficient angle of incidence, reduce the sensitivity to incident wavelength, do not need to add extra system, only realize Radix Rumicis detection by single photodetector.
Description
Technical field
The present invention relates to the Radix Rumicis photodetector of a kind of photodetector preparation method and preparation, belong to field of semiconductor photoelectron technique.
Background technology
Photodetector is used widely in fields such as biomedicine, data storage medium, flame monitoring, ultraviolet dosage measurement, high-energy ray detection, medical treatment, safety check, industrial flaw detections. When incident illumination energy is more than photodetector material energy gap, electronics will being made to transit to conduction band from valence band, produce electron hole pair, the electron hole pair of generation is collected by electrode, is the formation of photoelectric current output. Quantum efficiency is one of most important performance indications weighing photodetector, is mainly determined by photon incidence efficiency, internal quantum efficiency and carrier collection efficiency. Owing to the refractivity of quasiconductor and air is big, suitable light is reflected by interface, it is impossible to enters in device and is collected, and causes that device efficiency reduces. Generally according to incident illumination and reflection interference of light cancellation principle, design and prepare anti-reflection film so that the vertical incidence light incidence efficiency of single wavelength reaches more than 95%. But the problem that this design brings is, when incident wavelength offset design wavelength, or angle of incidence offset from perpendicular, detection efficient sharply declines.
According to Theory of Electromagnetic Field, for TE ripple electric field being perpendicular to the plane of incidence, the Fresnel reflection coefficient that can derive TE ripple according to the seriality of interface is:
Wherein, θ0For angle of incidence, θ1For the angle of emergence, θ0With θ1Meet:
Wherein n0For the refractive index of incident medium, n1Refractive index for emergent medium. For the incident illumination (TE ripple) of 650nm from air incidence to silicon materials surface, as shown in Figure 1, can showing that TE wave reflection rate increases with the increase of angle of incidence, illustrate that photon incidence efficiency is relevant with angle, the photon incidence in vertical normal incidence direction is most effective. The anti-reflection film that usual people adopt, when being λ/4 according to anti-reflection film thickness the light transmission that wavelength is λ is the highest, silicon dioxide at one layer of 100nm of silicon materials superficial growth is used for the incident illumination of anti-reflection 600nm, the silicon dioxide of 100nm is become with silicon materials equivalence an interface, its admittance is Y, defines its eigenmatrix and is:
Wherein, n1And n2The respectively refractive index of silicon dioxide and silicon,
For the phase thickness of silicon dioxide, d1For the actual (real) thickness of silicon dioxide, Y=C/B, the reflection coefficient after therefore adding anti-reflection film is:
Wherein, n0Refractive index for air.
Result of calculation is as shown in fig. 2, it can be seen that along with angle of incidence increases to 60 ° from 0 °, to 600nm wavelength, absorbance is reduced to 75% from 91%, and transmittance peak wavelength is also with the centre wavelength of the increase off-design of angle, being reduced to 470nm from 600nm, absorbance constantly declines.
At present, in space optical communication, weak light detection, return laser beam detection etc., all Radix Rumicis photodetection is had strong demand, such as, due to echo scattering etc. that laser beam divergence causes in diffuse-reflectance detection in space optical communication, return laser beam detection, it is characterized in that the ranges of incidence angles of incident illumination is big, intensity is faint, therefore these application all require that photodetector is while receiving the incident illumination of wider angle scope, has high sensitivity and quantum efficiency.
Just because of current anti-reflection film designing requirement incident illumination vertical incidence, in actual detection system, need extra detector Rotable Control System, owing to being subject to the restriction of Rotable Control System speed, scan efficiency is too low, therefore further provide the Focused Optical system coordinated with photodetector and become focal plane arrays (FPA) by increasing detector set, realize the detection to all directions signal, but extra system not only increases the volume of whole photodetector module, more increase and realize difficulty.
Summary of the invention
Present invention aim at solving above-mentioned technical problem, it is provided that the photodetector structure of a kind of Radix Rumicis and preparation method.
The technical solution used in the present invention is:
The preparation method of a kind of photodetector, comprises the steps:
Transition zone preparation process, with the p-GaN of one layer of 200nm of 800-1200 DEG C of growth in the photosurface of photodetector structure, as transition zone;
Seed layer preparation process, with the p-GaN of one layer of 50nm of 600-900 DEG C of growth on described transition zone, as the seed layer of structure structure again;
Structure step again, is rapidly heated after having grown seed layer, with the p-GaN of one layer of 150nm of 950-1200 DEG C of growth, forms structure photosurface again.
Preferably, after the described step of structure again, also include passivation layer preparation process, structure photosurface again formed by electron beam evaporation plating/sputtering the ITO formation passivation layer of 100nm, described passivation layer envelope completely described in structure photosurface again.
Preferably, the upper surface of the described photosurface of structure again is out-of-flatness surface, in order to make the part of the reflection light produced after structure photosurface again described in oblique incident ray contact again enter in described photodetection structure as oblique incident ray.
Preferably, the out-of-flatness surface of the described photosurface of structure again is the continuous cross section of rule.
Preferably, the continuous cross section of the described photosurface of structure again is taper, trapezoidal, rectangle, spherical, bulb-shaped recess shape, its figure dutycycle 50% to 100%.
Preferably, the thickness of the described photosurface of structure again is between 0.1 μm to 50 μm.
Present invention further teaches a kind of Radix Rumicis photodetector, including for producing photoelectric photodetection structure, the upper surface of described photodetection structure is provided with structure photosurface again, and the part of the reflection light that the upper surface of the described photosurface of structure again is out-of-flatness surface in order to produce after making described in oblique incident ray contact structure photosurface again enters in described photodetection structure as oblique incident ray again.
Preferably, the upper surface of the described photosurface of structure again is additionally provided with passivation layer, described passivation layer cover all described in structure photosurface again, the material of described passivation layer is SiO2、SiNx、MgF2、ITO。
Preferably, the described photosurface of structure again can be applicable in the photodetection structure prepared by silicon, polysilicon, GaAs, GaN, InP, SiC, ZnO, SOI, mercury cadmium telluride.
Preferably, described photodetection structure is the avalanche photodetector of linear model and Geiger mode angular position digitizer, or is PIN photoelectric detector, or is MSM photoelectric detector.
The beneficial effects of the present invention is: the preparation method providing a kind of Radix Rumicis photodetector, high efficient and reliable, by at photodetector surfaces structure again, break the restriction of Fresnel reflection coefficient angle of incidence, reduce the sensitivity to incident wavelength, do not need to add extra system, only realize Radix Rumicis detection by single photodetector.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described:
Fig. 1: TE ripple is from air incidence to silicon materials surface, and reflectance is with the change curve of angle of incidence.
Fig. 2: containing 100nmSiO2The silicon materials substrate of the anti-reflection film transmission curve figure to the incident illumination of 0 °, 30 ° and 60 ° angle of incidence.
Fig. 3: the structural representation of the Radix Rumicis photodetector of the present invention.
Fig. 4: oblique incident ray input path schematic diagram on the photosurface of structure again of the present invention.
Fig. 5 to Fig. 9: the cross-sectional schematic of the photosurface of structure again of the present invention.
Figure 10: the profile that each step of the preparation method of the Radix Rumicis photodetector of the present invention is corresponding.
Detailed description of the invention
Present invention is disclosed a kind of Radix Rumicis photodetector, its structure is as it is shown on figure 3, include successively from top to bottom: passivation layer 101, again structure photosurface 102 and photodetection structure 103. Described photodetection structure 103 is used for producing photoelectric effect, and this is prior art, does not repeat them here. Shown in Fig. 4, the part of the reflection light that the upper surface of the described photosurface of structure again 102 is out-of-flatness surface in order to produce after making described in oblique incident ray contact structure photosurface 102 again enters in described photodetection structure 103 as oblique incident ray again, described passivation layer 101 envelope completely described in structure photosurface 102 again.
Concrete, when incident illumination incides the photosurface of structure again 102 of photodetection structure 103 according to certain angle, owing to the actual incident angle in incidence point place changes, actual incident angle is reduced for inclined plane, therefore, it is possible to improve the absorbance of oblique incidence light. Meanwhile, the light of reflection reflects in multiple interfaces, increases the probability being transmitted into quasiconductor, thus increasing absorbance, breaking the restriction of Fresnel reflection coefficient angle of incidence, reducing the sensitivity to incident wavelength, it is achieved Radix Rumicis detects.
The photosurface of structure again 102 in the present invention, it is possible to formed by methods such as chemical attack, laser grooving, reactive ion etching, mechanical carving groove, epitaxial growths, deeper 0.1 μm to 50 μm of structure structure. The surface topography of the described photosurface of structure again is the continuous cross section of rule, it is possible to for the taper of such as Fig. 5 to Fig. 9 announcement, trapezoidal, rectangle, spherical, bulb-shaped recess etc., its figure dutycycle 50% to 100%.
The photodetection structure 103 of the present invention can be repaired because of the surface damage that structure introduces again by increase passivation layer 101 on structure photosurface 102 again, reduces surface recombination, reduces dark current. Further, owing to described passivation layer 101 has certain thickness, between 1nm to 10 μm, therefore it can as the existence of a kind of anti-reflection film. This passivation layer 101 material can be SiO2、SiNx、MgF2, ITO etc. Certainly, if being in the consideration of cost, also this passivation layer 101 can be saved, namely Radix Rumicis photodetector only includes photodetection structure and the structure photosurface again being provided thereon, at least part of surface of the described photosurface of structure again is out-of-flatness surface, in order to make the part of the reflection light produced after structure photosurface 102 again described in oblique incident ray contact again enter in described photodetection structure 103 as oblique incident ray.
The photosurface of structure again 102 of the present invention is applicable to the photodetector prepared by various materials such as silicon, polysilicon, GaAs, GaN, InP, SiC, ZnO, SOI, mercury cadmium tellurides.
The photosurface of structure again 102 of the present invention is applicable to the avalanche photodetector of linear model and Geiger mode angular position digitizer, is also applied for PIN photoelectric detector, MSM photoelectric detector etc.
The preparation method that the Radix Rumicis photodetector of the present invention once is described below.
As shown in Figure 10, photodetection structure 203 adopts the MOCVD GaN base photodetector grown, and structure photosurface 202 is to form pyramidal structure by epitaxially grown method again for it, and preparation process and method are as follows:
Step (a), in the photosurface 202 of photodetector structure 203 using the 800-1200 DEG C of p-GaN growing one layer of 200nm as transition zone 204;
Step (b), on described transition zone 204 using the 600-900 DEG C of p-GaN growing one layer of 50nm as the seed layer 205 of structure structure again;
Step (c), it is rapidly heated after having grown seed layer 205, with the 950-1200 DEG C of p-GaN growing one layer of 150nm, forms structure photosurface 202 again;
Step (d), on structure photosurface 202 again, formed the ITO formation passivation layer 201 of 100nm by electron beam evaporation plating/sputtering, namely obtain the Radix Rumicis photodetector of the present invention.
Wherein, electron beam evaporation plating/be sputtered to prior art, do not repeat them here.
The present invention still has numerous embodiments, all employing equivalents or equivalent transformation and all technical schemes of being formed, all falls within protection scope of the present invention.
Claims (10)
1. the preparation method of a photodetector, it is characterised in that: comprise the steps,
Transition zone preparation process, with the p-GaN of one layer of 200nm of 800-1200 DEG C of growth in the photosurface (202) of photodetector structure (203), as transition zone (204);
Seed layer preparation process, with the p-GaN of one layer of 50nm of 600-900 DEG C of growth on described transition zone (204), as the seed layer (205) of structure structure again;
Structure step again, is rapidly heated after having grown seed layer (205), with the p-GaN of one layer of 150nm of 950-1200 DEG C of growth, forms structure photosurface (202) again.
2. the preparation method of a kind of photodetector according to claim 1, it is characterized in that: after the described step of structure again, also include passivation layer preparation process, structure photosurface (202) again forms the ITO of 100nm by electron beam evaporation plating/sputtering and forms passivation layer (201), described passivation layer (201) envelope completely described in structure photosurface (202) again.
3. the preparation method of a kind of photodetector according to claim 1 and 2, it is characterized in that: the upper surface of the described photosurface of structure again (102,202) is out-of-flatness surface, in order to make the part of the reflection light that structure photosurface (102,202) produces afterwards again described in oblique incident ray contact again enter in described photodetection structure (103,203) as oblique incident ray.
4. the preparation method of a kind of photodetector according to claim 3, it is characterised in that: the out-of-flatness surface of the described photosurface of structure again (102,202) is the continuous cross section of rule.
5. the preparation method of a kind of photodetector according to claim 4, it is characterized in that: the continuous cross section of the described photosurface of structure again (102,202) is taper, trapezoidal, rectangle, spherical, bulb-shaped recess shape, its figure dutycycle 50% to 100%.
6. the preparation method of a kind of photodetector according to claim 1, it is characterised in that: the thickness of the described photosurface of structure again (102,202) is between 0.1 μm to 50 μm.
7. the Radix Rumicis photodetector that prepared by a preparation method according to claim 1, it is characterized in that: include for producing photoelectric photodetector structure (103), the upper surface of described photodetector structure (103) is provided with structure photosurface (102) again, the upper surface of the described photosurface of structure again (102) is out-of-flatness surface, and the continuous cross section that this out-of-flatness surface is rule, in order to make the part of the reflection light that structure photosurface (102) produces afterwards again described in oblique incident ray contact again enter in described photodetector structure (103) as oblique incident ray.
8. Radix Rumicis photodetector according to claim 7, it is characterized in that: the upper surface of the described photosurface of structure again (102) is additionally provided with passivation layer (101), described passivation layer (101) envelope completely described in structure photosurface (102) again, the material of described passivation layer (101) is SiO2, SiNx, MgF2 or ITO.
9. Radix Rumicis photodetector according to claim 7, it is characterised in that: the described photosurface of structure again (102) can be applicable in the photodetector structure (103) prepared by silicon, polysilicon, GaAs, GaN, InP, SiC, ZnO, SOI or mercury cadmium telluride.
10. Radix Rumicis photodetector according to claim 7, it is characterised in that: avalanche photodetector that described photodetector structure (103) is linear model and Geiger mode angular position digitizer or be PIN photoelectric detector or for MSM photoelectric detector.
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| CN1846378A (en) * | 2003-09-05 | 2006-10-11 | 新科实业有限公司 | Free space MSM photodetector assembly |
| CN102800717A (en) * | 2012-08-30 | 2012-11-28 | 中山大学 | PIN structural ultraviolet photoelectric detector for avalanche and preparation method thereof |
| CN103681899A (en) * | 2013-12-18 | 2014-03-26 | 无锡中微晶园电子有限公司 | Photosensor with photosensitive density improved and manufacturing method thereof |
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| US7553687B2 (en) * | 2006-06-28 | 2009-06-30 | Intel Corporation | Dual seed semiconductor photodetectors |
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| CN1846378A (en) * | 2003-09-05 | 2006-10-11 | 新科实业有限公司 | Free space MSM photodetector assembly |
| CN102800717A (en) * | 2012-08-30 | 2012-11-28 | 中山大学 | PIN structural ultraviolet photoelectric detector for avalanche and preparation method thereof |
| CN103681899A (en) * | 2013-12-18 | 2014-03-26 | 无锡中微晶园电子有限公司 | Photosensor with photosensitive density improved and manufacturing method thereof |
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