CN110164982A - A kind of Junction Barrier Schottky diode - Google Patents
A kind of Junction Barrier Schottky diode Download PDFInfo
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- CN110164982A CN110164982A CN201910459154.XA CN201910459154A CN110164982A CN 110164982 A CN110164982 A CN 110164982A CN 201910459154 A CN201910459154 A CN 201910459154A CN 110164982 A CN110164982 A CN 110164982A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 85
- 238000002347 injection Methods 0.000 claims abstract description 45
- 239000007924 injection Substances 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 description 36
- 239000000463 material Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 5
- 229910019142 PO4 Inorganic materials 0.000 description 4
- 239000010452 phosphate Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
The invention discloses a kind of Junction Barrier Schottky diodes, including N- epitaxial layer；P-type ion injection region, position are stated in N- epitaxial layer, and the depth of P-type ion injection region is gradually reduced from the edge of Junction Barrier Schottky diode to center；The first metal layer, positioned at the upper surface of N- epitaxial layer, and the interface of each P-type ion injection region and the first metal layer forms first Schottky contact region, the interface of N- epitaxial layer and the first metal layer between adjacent several P-type ion injection regions forms the second Schottky contact region, and the Schottky contact area of the second Schottky contact region is gradually reduced from the edge of Junction Barrier Schottky diode to center.Junction Barrier Schottky diode of the invention can reduce leakage current, reduces the temperature difference of Junction Barrier Schottky diode, effectively inhibits the generation of local ELECTROMIGRATION PHENOMENON, improve the reliability of Junction Barrier Schottky diode.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of Junction Barrier Schottky diode.
Background technique
Wide bandgap semiconductor materials silicon carbide has biggish forbidden bandwidth, higher critical breakdown electric field, high heat conductance
With desirable physicals and the chemical characteristic such as high electronics saturation drift velocity, it is suitble to production high temperature, high pressure, high-power, Flouride-resistani acid phesphatase half
Conductor device.
In field of power electronics, JBS diode (Junction Barrier Schottky diode, Junction Barrier
Schottky Diode) it has been widely used, have the characteristics that good forward conduction characteristic, reverse leakage current are small.
But since the package area that JBS diode different location is contacted is different, lead to JBS diode different location
Radiating condition is different, eventually leads to JBS diode center temperature greater than its peripheral region temperature, and this temperature difference will lead to
JBS diode different location carrier mobility is different, and current distribution is uneven is even, and local ELECTROMIGRATION PHENOMENON occurs in JBS diode,
To influence the reliability of JBS diode.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of two poles of Junction Barrier Schottky
Pipe.The technical problem to be solved in the present invention is achieved through the following technical solutions:
A kind of Junction Barrier Schottky diode, comprising:
N- epitaxial layer；
Several P-type ion injection regions are located in the N- epitaxial layer, and the depth of the P-type ion injection region is from the knot
The edge of type barrier Schottky diode to center is gradually reduced according to first trend or second trend；
The first metal layer, positioned at the upper surface of the N- epitaxial layer, and each P-type ion injection region and described first
The interface of metal layer forms first Schottky contact region, the N- extension between adjacent several P-type ion injection regions
The interface of layer and the first metal layer forms the second Schottky contact region or ohmic contact regions, wherein second Xiao Te
The Schottky contact area of base contact zone or the Ohmic contact area of ohmic contact regions are from the Junction Barrier Schottky diode
Edge to center be gradually reduced according to third trend or the 4th trend.
In one embodiment of the invention, the first trend is from the edge of the Junction Barrier Schottky diode
Depth to each of the center P-type ion injection region is sequentially reduced.
In one embodiment of the invention, the second trend is from the edge of the Junction Barrier Schottky diode
Depth to the every M P-type ion injection regions at center reduces primary, wherein M is more than or equal to 2.
In one embodiment of the invention, the P-type ion injection region is of same size.
In one embodiment of the invention, the third trend is from the edge of the Junction Barrier Schottky diode
Ohm of Schottky contact area or each ohmic contact regions to each of center second Schottky contact region connects
Contacting surface product is sequentially reduced.
In one embodiment of the invention, the 4th trend is from the edge of the Junction Barrier Schottky diode
To ohm of the Schottky contact area or every N number of ohmic contact regions per N number of second Schottky contact region at center
Contact area reduces primary, wherein N is more than or equal to 2.
It in one embodiment of the invention, further include SiO2Spacer medium layer is located at the N- epitaxial layer and described the
Between one metal layer, and it is located at the end of the N- epitaxial layer.
In one embodiment of the invention, further include N+ substrate layer, be located at N- epitaxial layer lower surface.
In one embodiment of the invention, further include third metal layer, be located at N+ substrate layer lower surface.
Beneficial effects of the present invention:
The Schottky contact area of second Schottky contact region of Junction Barrier Schottky diode proposed by the invention
Or the Ohmic contact area of ohmic contact regions is gradually reduced from the edge of Junction Barrier Schottky diode to center, thus protecting
Under the premise of card reverse leakage current and forward conduction resistance are not degenerated, the temperature of Junction Barrier Schottky diode is reduced
Difference effectively inhibits the generation of local ELECTROMIGRATION PHENOMENON, improves the reliability of Junction Barrier Schottky diode.Junction type simultaneously
The depth of the P-type ion injection region of barrier Schottky diode gradually subtracts from the edge of Junction Barrier Schottky diode to center
It is small, it can guarantee that Junction Barrier Schottky diode under the premise of reducing its temperature difference and forward conduction resistance is not degenerated, subtracts
The reverse leakage current of small junction type barrier Schottky diode.
The present invention is described in further details below with reference to accompanying drawings and embodiments.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of Junction Barrier Schottky diode provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of another Junction Barrier Schottky diode provided in an embodiment of the present invention；
Fig. 3 is a kind of schematic top plan view of Junction Barrier Schottky diode provided in an embodiment of the present invention.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
Referring to Figure 1, Fig. 1 is a kind of structural representation of Junction Barrier Schottky diode provided in an embodiment of the present invention
Figure, the present embodiment provides a kind of Junction Barrier Schottky diode, which includes:
N- epitaxial layer 3；
Several P-type ion injection regions 4 are located in the N- epitaxial layer 4, and the depth of the P-type ion injection region 4 is from described
The edge of Junction Barrier Schottky diode to center is gradually reduced according to first trend or second trend；
The first metal layer 6, positioned at the upper surface of the N- epitaxial layer 3, and each P-type ion injection region 4 with it is described
The interface of the first metal layer 6 forms first Schottky contact region 7, between adjacent several P-type ion injection regions 4
The interface of N- epitaxial layer 3 and the first metal layer 6 forms the second Schottky contact region 8 or ohmic contact regions 8, wherein institute
The Schottky contact area of the second Schottky contact region 8 or the Ohmic contact area 8 of ohmic contact regions are stated from the junction barrier
The edge of Schottky diode to center is gradually reduced according to third trend or the 4th trend.
The schottky junctions contacting surface of second Schottky contact region of the Junction Barrier Schottky diode that the present embodiment is proposed
Long-pending or ohmic contact regions Ohmic contact areas are gradually reduced from the edge of Junction Barrier Schottky diode to center, thus
Under the premise of guaranteeing that reverse leakage current and forward conduction resistance are not degenerated, the temperature of Junction Barrier Schottky diode is reduced
Difference effectively inhibits the generation of local ELECTROMIGRATION PHENOMENON, improves the reliability of Junction Barrier Schottky diode.Junction type simultaneously
The depth of the P-type ion injection region of barrier Schottky diode gradually subtracts from the edge of Junction Barrier Schottky diode to center
It is small, it can guarantee that Junction Barrier Schottky diode under the premise of reducing its temperature difference and forward conduction resistance is not degenerated, subtracts
The reverse leakage current of small junction type barrier Schottky diode.
Further, the N-Epitaxial layer 3 is the doping of phosphate material and carbofrax material, wherein the doping of phosphate material is dense
Degree is determining according to the breakdown voltage of required Junction Barrier Schottky diode, such as: the Junction Barrier Schottky diode
When breakdown voltage is 1200V, the phosphorus doping density is 1 × 1015/cm-3。
Further, the N-The thickness of epitaxial layer 3 is determining according to the breakdown voltage of required Schottky diode, such as:
When the breakdown voltage of the Schottky diode is 1200V, the N-Epitaxial layer 2 with a thickness of 10 μm.
Further, the first metal layer 6 of the present embodiment for example can be metallic nickel or Titanium.
Further, one layer of second metal layer can also be set on the first metal layer 6, and the second metal layer is metal
Al or Ag, with a thickness of 2-5 μm.
In one embodiment, first trend is each of from the edge of the Junction Barrier Schottky diode to center
The depth of the P-type ion injection region 4 is sequentially reduced.For example, referring to Fig. 2, Junction Barrier Schottky diode is set altogether in Fig. 2
10 P-type ion injection regions 4 are equipped with, the depth of P-type ion injection region 4 from left to right is successively denoted as DP1、DP2、DP3、DP4、
DP5、DP6、DP7、DP8、DP9、DP10, when it meets first trend variation, the P-type ion note of the Junction Barrier Schottky diode
The depth relationship for entering area 4 meets following relationship:
DP1>DP2>DP3>DP4>DP5=DP6<DP7<DP8<DP9<DP10
In one embodiment, second trend is every M from the edge of the Junction Barrier Schottky diode to center
The depth of a P-type ion injection region reduces primary, wherein M is more than or equal to 2.For example, Junction Barrier Schottky diode is total
10 P-type ion injection regions 4 are provided with, the depth of P-type ion injection region 4 from left to right is successively denoted as DP1、DP2、DP3、
DP4、DP5、DP6、DP7、DP8、DP9、DP10, when it meets second trend variation, M takes 2, then two pole of Junction Barrier Schottky
The depth relationship of the P-type ion injection region 4 of pipe meets following relationship:
DP1=DP2>DP3=DP4>DP5=DP6<DP7=DP8<DP9=DP10
The M of the present embodiment can also take other values, for example, 3,4 or 5 etc., and the present embodiment is not specifically limited it, this
Field technical staff can select according to actual needs.
The generation type of 4 different depth of P-type ion injection region of the present embodiment can be the mode of multiple ion implanting,
It can be and formed by the oxidation layer mask for growing different-thickness in Junction Barrier Schottky diode different location.
The present embodiment is pressed by the depth of P-type ion injection region 4 from the edge of Junction Barrier Schottky diode to center
According to the mode that first trend or second trend are gradually reduced, so that the leakage current and forward conduction of Junction Barrier Schottky diode
Resistance can also change, even if its reverse leakage current reduces, forward conduction resistance increases, when the depth of P-type ion injection region 4
When the trend being gradually reduced from the edge of Junction Barrier Schottky diode to center according to first trend or second trend is bigger,
Then reverse leakage current is smaller, and forward conduction resistance is then bigger.
Further, the doping concentration of P-type ion injection region 4 for example can be for more than or equal to 1*1017cm-3。
Further, the depth of P-type ion injection region 4 for example can be for more than or equal to 0.5 μm.
Further, P-type ion injection region 4 is of same size, such as can be for more than or equal to 2 μm.
Further, the distance between two neighboring P-type ion injection region 4 for example can be for more than or equal to 2 μm.
The Schottky contact area of second Schottky contact region or the Ohmic contact area of ohmic contact regions are from the junction type
The edge of barrier Schottky diode to center is gradually reduced according to third trend or the 4th trend, i.e. JBS primitive unit cell is from the knot
The edge of type barrier Schottky diode to center is gradually reduced according to third trend or the 4th trend, and each JBS primitive unit cell is served as reasons
The region that the center line of the center line of one P-type ion injection region 4 to P-type ion injection region 4 adjacent thereto is constituted.
In one embodiment, third trend is each of from the edge of the Junction Barrier Schottky diode to center
The Schottky contact area of second Schottky contact region 8 or the Ohmic contact area of ohmic contact regions 8 are sequentially reduced.Example
Such as, referring again to Fig. 2, Junction Barrier Schottky diode is provided with 10 P-type ion injection regions 4 altogether in Fig. 2, then includes altogether
9 the second Schottky contact regions 8 or 9 ohmic contact regions 8, by the Schottky of 9 the second Schottky contact regions 8 from left to right
The Ohmic contact area of contact area or 9 ohmic contact regions 8 is successively denoted as WS1、WS2、WS3、WS4、WS5、WS6、WS7、WS8、WS9,
When it meets third Long-term change trend, the Schottky contacts of the second Schottky contact region 8 of the Junction Barrier Schottky diode
Area or the Ohmic contact area of ohmic contact regions 8 meet following relationship:
WS1>WS2>WS3>WS4>WS5<WS6<WS7<WS8<WS9
In one embodiment, the 4th trend is every N from the edge of the Junction Barrier Schottky diode to center
The Schottky contact area of a second Schottky contact region or the Ohmic contact area of every N number of ohmic contact regions 8 subtract
It is small primary, wherein N is more than or equal to 2.For example, Junction Barrier Schottky diode is provided with 10 P-type ion injection regions 4 altogether, then
It include altogether 9 the second Schottky contact regions 8 or 9 ohmic contact regions 8, by 9 the second Schottky contact regions 8 from left to right
Schottky contact area or the Ohmic contact area of 9 ohmic contact regions 8 are successively denoted as WS1、WS2、WS3、WS4、WS5、WS6、WS7、
WS8、WS9, when it meets four Long-term change trends, N takes 2, the second Schottky contact region of the Junction Barrier Schottky diode
8 Schottky contact area or the Ohmic contact area of ohmic contact regions 8 meet following relationship:
WS1=WS2>WS3=WS4>WS5<WS6=WS7<WS8=WS9
The N of the present embodiment can also take other values, for example, 3,4 or 5 etc., and the present embodiment is not specifically limited it, this
Field technical staff can select according to actual needs.
The present embodiment passes through the Schottky contact area of the second Schottky contact region or the Ohmic contact face of ohmic contact regions
It accumulates from the edge of Junction Barrier Schottky diode to center in such a way that third trend or the 4th trend are gradually reduced, not only
Under the premise of the reverse leakage current and forward conduction resistance for guaranteeing Junction Barrier Schottky diode are not degenerated, also reduce
The temperature difference of Junction Barrier Schottky diode, so that the mobility of the carrier of Junction Barrier Schottky diode different location
It is identical, so that homogeneous current distribution, to effectively inhibit the hair of the local ELECTROMIGRATION PHENOMENON of Junction Barrier Schottky diode
It is raw, improve the reliability of Junction Barrier Schottky diode.
Further, Fig. 3 is referred to, the shape of P-type ion injection region 4 can be bar shaped, rectangular or square, can be with
For other shapes, the present embodiment does not do specific restriction to the shape of P-type ion injection region 4.
In one embodiment, the Junction Barrier Schottky diode of the present embodiment can also include SiO2Spacer medium layer
5, between the N- epitaxial layer 3 and the first metal layer 6, and it is located at the end of the N- epitaxial layer 3.
Preferably, SiO2Spacer medium layer 5 with a thickness of 200-500nm.
In one embodiment, the Junction Barrier Schottky diode of the present embodiment further includes N+ substrate layer 2, is located at described
3 lower surface of N- epitaxial layer.
Preferably, the N+Substrate layer 2 is highly doped N-shaped silicon carbide, and the N-shaped silicon carbide is phosphate material and silicon carbide
The doping of material, the doping concentration of phosphate material are >=1 × 1019/cm-3。
Preferably, the N+Substrate layer 2 with a thickness of 200 μm -500 μm.
In one embodiment, the Junction Barrier Schottky diode of the present embodiment further includes third metal layer 1, is located at institute
State 2 lower surface of N+ substrate layer, and third metal layer 1 and N+Substrate layer 2 forms Ohmic contact.
Preferably, the third metal layer 1 is W metal, with a thickness of 50-100nm.
Further, one layer of the 4th metal layer can also be set in the lower surface of third metal layer 1, the 4th metal layer can be with
It stacks gradually and to be formed for the metal of Ti/Ni/Ag, with a thickness of 2-5 μm.
The present embodiment can with the copper or aluminum conductor from Ag layers of second metallic surface extract after form institute
State cathode.
The schottky junctions contacting surface of second Schottky contact region of the Junction Barrier Schottky diode that the present embodiment is proposed
Long-pending or ohmic contact regions Ohmic contact areas are gradually reduced from the edge of Junction Barrier Schottky diode to center, thus
Under the premise of guaranteeing that reverse leakage current and forward conduction resistance are not degenerated, the temperature of Junction Barrier Schottky diode is reduced
Difference effectively inhibits the generation of local ELECTROMIGRATION PHENOMENON, improves the reliability of Junction Barrier Schottky diode.Junction type simultaneously
The depth of the P-type ion injection region of barrier Schottky diode gradually subtracts from the edge of Junction Barrier Schottky diode to center
It is small, it can guarantee that Junction Barrier Schottky diode under the premise of reducing its temperature difference and forward conduction resistance is not degenerated, subtracts
The reverse leakage current of small junction type barrier Schottky diode.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
What can be combined in any suitable manner in one or more embodiment or examples.In addition, those skilled in the art can say this
Different embodiments or examples described in bright book are engaged and are combined.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (9)
1. a kind of Junction Barrier Schottky diode characterized by comprising
N- epitaxial layer；
Several P-type ion injection regions are located in the N- epitaxial layer, and the depth of the P-type ion injection region is from the junction type gesture
Edge to the center for building Schottky diode is gradually reduced according to first trend or second trend；
The first metal layer, positioned at the upper surface of the N- epitaxial layer, and each P-type ion injection region and first metal
The interface of layer forms first Schottky contact region, the N- epitaxial layer between adjacent several P-type ion injection regions with
The interface of the first metal layer forms the second Schottky contact region or ohmic contact regions, wherein second schottky junctions
The Schottky contact area in area or the Ohmic contact area of ohmic contact regions are touched from the side of the Junction Barrier Schottky diode
Edge is gradually reduced to center according to third trend or the 4th trend.
2. Schottky diode according to claim 1, which is characterized in that the first trend is from the junction barrier
The depth of each of the edge of Schottky diode to the center P-type ion injection region is sequentially reduced.
3. Schottky diode according to claim 1, which is characterized in that the second trend is from the junction barrier
The depth of the every M P-type ion injection regions at the edge of Schottky diode to center reduces primary, wherein M is more than or equal to
2。
4. Schottky diode according to claim 2 or 3, which is characterized in that the width phase of the P-type ion injection region
Together.
5. Schottky diode according to claim 1, which is characterized in that the third trend is from the junction barrier
The Schottky contact area of each of the edge of Schottky diode to center second Schottky contact region is each described
The Ohmic contact area of ohmic contact regions is sequentially reduced.
6. Schottky diode according to claim 1, which is characterized in that the 4th trend is from the junction barrier
The Schottky contact area of every N number of second Schottky contact region at the edge of Schottky diode to center or every N number of institute
The Ohmic contact area for stating ohmic contact regions reduces once, wherein N is more than or equal to 2.
7. Schottky diode according to claim 1, which is characterized in that further include SiO2Spacer medium layer is located at described
Between N- epitaxial layer and the first metal layer, and it is located at the end of the N- epitaxial layer.
8. Schottky diode according to claim 1, which is characterized in that further include N+ substrate layer, be located at outside the N-
Prolong a layer lower surface.
9. Schottky diode according to claim 8, which is characterized in that further include third metal layer, be located at the N+
Substrate layer lower surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN112531007A (en) * | 2019-09-19 | 2021-03-19 | 中国科学院长春光学精密机械与物理研究所 | Junction barrier Schottky diode with gradient depth P-type region and preparation method |
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| US20080277669A1 (en) * | 2007-05-10 | 2008-11-13 | Denso Corporation | SiC semiconductor having junction barrier Schottky device |
| CN102084487A (en) * | 2008-05-21 | 2011-06-01 | 克里公司 | Junction barrier schottky diodes with current surge capability |
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| CN112531007A (en) * | 2019-09-19 | 2021-03-19 | 中国科学院长春光学精密机械与物理研究所 | Junction barrier Schottky diode with gradient depth P-type region and preparation method |
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