CN110164983A - A kind of Junction Barrier Schottky diode being gradually increased from center to edge Schottky contacts - Google Patents
A kind of Junction Barrier Schottky diode being gradually increased from center to edge Schottky contacts Download PDFInfo
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- CN110164983A CN110164983A CN201910459859.1A CN201910459859A CN110164983A CN 110164983 A CN110164983 A CN 110164983A CN 201910459859 A CN201910459859 A CN 201910459859A CN 110164983 A CN110164983 A CN 110164983A
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- Prior art keywords
- schottky
- center
- edge
- schottky diode
- type ion
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- 230000004888 barrier function Effects 0.000 title claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000002347 injection Methods 0.000 claims abstract description 30
- 239000007924 injection Substances 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 description 18
- 239000000463 material Substances 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 229910019142 PO4 Inorganic materials 0.000 description 4
- 239000010452 phosphate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of Junction Barrier Schottky diodes being gradually increased from center to edge Schottky contacts, comprising: N‑Epitaxial layer, several P-type ion injection regions and the first metal layer, wherein several P-type ion injection regions are set to N‑Epitaxial layer inner surface, and the center on each P-type ion injection region surface is provided with a groove, the first metal layer is set to N‑On epitaxial layer and cover P-type ion injection region, the N between two neighboring P-type ion injection region‑Epitaxial layer and the first metal layer form the first Schottky contact region, and the area of the first Schottky contact region is gradually increased from the center of Junction Barrier Schottky diode to edge.The area of first Schottky contact region of the invention is gradually increased from the center of Junction Barrier Schottky diode to edge, guarantee that reverse leakage current and forward conduction resistance are not degenerated, reduce the temperature difference at device center and edge, the generation of local ELECTROMIGRATION PHENOMENON is effectively inhibited, to improve the reliability of device.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of to be gradually increased from center to edge Schottky contacts
Junction Barrier Schottky diode.
Background technique
Wide bandgap semiconductor materials silicon carbide has biggish forbidden bandwidth, higher critical breakdown electric field, high heat conductance
With desirable physicals and the chemical characteristic such as high electronics saturation drift velocity, it is suitble to production high temperature, high pressure is high-power, and the half of Flouride-resistani acid phesphatase
Conductor device.In field of power electronics, JBS (Junction barrier schottky diode, junction barrier schottky two
Pole pipe) the features such as diode has been widely used, it has good forward conduction characteristic, and reverse leakage current is small.
Compared to traditional Junction Barrier Schottky diode, groove profile Junction Barrier Schottky diode (TJBS, Trench
Junction barrier schottky diode) due to reducing the electric field of schottky region, so diode leakage current is obvious
Reduce.
But since the package area that TJBS diode different location is contacted is different, lead to TJBS diode different location
Radiating condition is different, eventually leads to TJBS diode center temperature greater than TJBS diode ambient temperature.This temperature difference can be led
Cause TJBS diode different location carrier mobility different, current distribution is uneven is even, and local electromigration occurs in TJBS diode
Phenomenon influences device reliability.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides one kind from center to edge schottky junctions
Touch the Junction Barrier Schottky diode being gradually increased.The technical problem to be solved in the present invention is achieved through the following technical solutions:
A kind of Junction Barrier Schottky diode being gradually increased from center to edge Schottky contacts, comprising: N-Extension
Layer, several P-type ion injection regions and the first metal layer, wherein
Several P-type ion injection regions are set to the N-Epitaxial layer inner surface, and each P-type ion injection region
The center on surface is provided with a groove, and the first metal layer is set to the N-On epitaxial layer and cover the P-type ion
Injection region, the N between the two neighboring P-type ion injection region-Epitaxial layer and the first metal layer form the first Schottky
The area of contact zone, the first Schottky contact region is gradually increased from center to the edge of the Junction Barrier Schottky diode.
In one embodiment of the invention, the area of first Schottky contact region is from the Junction Barrier Schottky
The center of diode is sequentially increased one by one to edge.
In one embodiment of the invention, the area of first Schottky contact region is from the Junction Barrier Schottky
The center of diode to edge increases primary every n first Schottky contact regions, wherein n is whole more than or equal to 2
Number.
In one embodiment of the invention, the width of all grooves and depth are equal.
In one embodiment of the invention, the depth of all P-type ion injection regions is equal.
In one embodiment of the invention, the P-type ion injection region and the first metal layer form the second Xiao Te
Base contact zone or ohmic contact regions.
It in one embodiment of the invention, further include N+Substrate layer is located at the N-The lower surface of epitaxial layer.
In one embodiment of the invention, further include two silica separation layers, be located at the N-Epitaxial layer
The surface at both ends.
In one embodiment of the invention, further include second metal layer, be located on the first metal layer.
Beneficial effects of the present invention:
The area of first Schottky contact region of the invention from the center of Junction Barrier Schottky diode to edge gradually
Increase, under the premise of guaranteeing that reverse leakage current and forward conduction resistance are not degenerated, reduces the temperature at device center and edge
It is poor to spend, and the generation of local ELECTROMIGRATION PHENOMENON is effectively inhibited, to improve the reliability of device.
The present invention is described in further details below with reference to accompanying drawings and embodiments.
Detailed description of the invention
Fig. 1 is a kind of junction barrier Xiao being gradually increased from center to edge Schottky contacts provided in an embodiment of the present invention
The structural schematic diagram of special based diode；
Fig. 2 is a kind of junction barrier Xiao being gradually increased from center to edge Schottky contacts provided in an embodiment of the present invention
The structural schematic diagram of special based diode；
Fig. 3 is a kind of junction barrier Xiao being gradually increased from center to edge Schottky contacts provided in an embodiment of the present invention
The top view of special based diode.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
Referring to Figure 1, Fig. 1 is provided in an embodiment of the present invention a kind of is gradually increased from center to edge Schottky contacts
The structural schematic diagram of Junction Barrier Schottky diode.The embodiment of the present invention provide one kind from center to edge Schottky contacts by
Cumulative big Junction Barrier Schottky diode, which includes: N+Substrate layer 1, N-If epitaxial layer 2,
The dry silica separation layer 5 of P-type ion injection region 3, two, the first metal layer 6 and second metal layer 8.
Specifically, the N+Substrate layer 1 is highly doped N-shaped silicon carbide, and the N-shaped silicon carbide is phosphate material and silicon carbide
The doping of material, the doping concentration of phosphate material are >=1 × 1019/cm-3。
Further, the N-shaped silicon carbide with a thickness of 200 μm -500 μm.
Further, Ohmic contact is formed after the highly doped N-shaped silicon carbide lower surface grows one layer of first metal
Area, then one layer of second metal is grown in the first metal underlying surface, it is formed after the second metallic surface is extracted with conducting wire later
Cathode.
Preferably, first metal is W metal, with a thickness of 50-100nm；
Preferably, second metal is that the metal of Ti/Ni/Ag stacks gradually to be formed, with a thickness of 2-5 μm.
Preferably, the conducting wire can be metallic copper perhaps the aluminium copper or aluminum conductor be bimetallic from described
G layers of surface A extract after form the cathode.
Specifically, N- epitaxial layer 2 is located at the N+On substrate layer 1.
Further, the N- epitaxial layer 2 is the doping of phosphate material and carbofrax material, wherein the doping of phosphate material is dense
Degree is determining according to the breakdown voltage of required Junction Barrier Schottky diode, such as: the Junction Barrier Schottky diode
When breakdown voltage is 1200V, the phosphorus doping density is 1 × 1015/cm-3。
Further, the thickness of the N- epitaxial layer 2 is true according to the breakdown voltage of required Junction Barrier Schottky diode
It is fixed, such as: when the breakdown voltage of the Junction Barrier Schottky diode is 1200V, the N- epitaxial layer 2 with a thickness of 10 μ
m。
Specifically, several P-type ion injection regions 3 are set to the N-2 inner surface of epitaxial layer, and each p-type
The center on 3 surface of ion implanted region is provided with a groove 4.
The P-type ion injection region 3 forms the second Schottky contact region or ohmic contact regions with the first metal layer 6.
Further, the width D of all grooves 4, depth P1 are equal to each other.
Preferably, depth P1 >=1 μm of the groove 4, width D≤5 μm of the groove 4；
Preferably, the width D of the groove 4 is 2.5 μm.
Further, the junction depth of the groove 4, that is, groove 4 depth.
Preferably, depth P2 >=2.5 μm of the P-type ion injection region 3.
Preferably, the width D of all P-type ion injection regions 3PIt is equal, and its width DP≤6.2μm。
Preferably, Fig. 3 is referred to, the injection shape of the P-type ion injection region 3 includes rectangle and square.
Specifically, two silica separation layers 5, are located at N-The surface at 2 both ends of epitaxial layer.
Preferably, the silica separation layer 6 with a thickness of 200-500nm.
Specifically, the first metal layer 6 is set to the N-On the epitaxial layer 2 and covering P-type ion injection region 3, it is adjacent
N between two P-type ion injection regions 3-Epitaxial layer 2 and the first metal layer 6 form the first Schottky contact region 7,
The area of first Schottky contact region 7 is gradually increased from center to the edge of the Junction Barrier Schottky diode.
Further, the area of first Schottky contact region 7 is from the center of the Junction Barrier Schottky diode
It is sequentially increased one by one to edge.For example, referring to Fig. 2, which is provided with 10 P-type ion injections
Area 3, and the area of the first Schottky contact region 7 is denoted as W from the left side of Junction Barrier Schottky diode to right side respectivelyS1-
WS9, wherein the area relationship of the first Schottky contact region 7 are as follows: WS1>WS2>WS3>WS4>WS5<WS6<WS7<WS8<WS9, i.e. first Xiao
The area of special base contact zone 7 is sequentially increased from the center of the Junction Barrier Schottky diode to edge one by one.
Further, the area of first Schottky contact region 7 is from the center of the Junction Barrier Schottky diode
Increase once to edge every n first Schottky contact regions 7, wherein n is the integer more than or equal to 2.For example, please again
Secondary the Junction Barrier Schottky diode is provided with 10 P-type ion injection regions 3 referring to fig. 2, and n value is 2, and by first
The area of Schottky contact region 7 is denoted as W from the left side of Junction Barrier Schottky diode to right side respectivelyS1-WS9, wherein it is described
The area relationship of first Schottky contact region 7 are as follows: WS1=WS2>WS3=WS4>WS5<WS6=WS7<WS8=WS9, i.e., described first Xiao
The area of special base contact zone 7 is from the center of the Junction Barrier Schottky diode to edge every 2 first Schottky
Contact zone 7 increases once.The implementation of the present invention is not limited to this, and n can also be with value for 3,4 or 5 etc., as long as meeting first Xiao
The area of special base contact zone 7 is increased from device center to device edge.
Preferably, the first metal layer 6 is metal Ti, with a thickness of 50-100nm.
Specifically, second metal layer 8 are located on the first metal layer 6.
Preferably, the second metal layer is metal Al or Ag, with a thickness of 2-5 μm.
The area of first Schottky contact region of the present embodiment from the center of Junction Barrier Schottky diode to edge by
It is cumulative big, the Schottky contact area of Junction Barrier Schottky diode center is reduced, two pole of Junction Barrier Schottky is increased
The Schottky contact area of tube edges, to reduce the center of Junction Barrier Schottky diode and the temperature difference at edge, simultaneously
Under the premise of no increase reverse leakage current, conducting resistance when improving the work of Junction Barrier Schottky diode forward is special
Property, improve the Performance And Reliability of device.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
What can be combined in any suitable manner in one or more embodiment or examples.In addition, those skilled in the art can say this
Different embodiments or examples described in bright book are engaged and are combined.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (9)
1. a kind of Junction Barrier Schottky diode being gradually increased from center to edge Schottky contacts, which is characterized in that packet
It includes: N-Epitaxial layer (2), several P-type ion injection regions (3) and the first metal layer (6), wherein
Several P-type ion injection regions (3) are set to the N-Epitaxial layer (2) inner surface, and each P-type ion injection
The center on area (3) surface is provided with a groove (4), and the first metal layer (6) is set to the N-On epitaxial layer (2) and
Cover the P-type ion injection region (3), the N between the two neighboring P-type ion injection region (3)-Epitaxial layer (2) with it is described
The first metal layer (6) forms the first Schottky contact region (7), and the area of the first Schottky contact region (7) is from the junction barrier
The center of Schottky diode to edge is gradually increased.
2. Schottky diode according to claim 1, which is characterized in that the face of first Schottky contact region (7)
Product is sequentially increased from the center of the Junction Barrier Schottky diode to edge one by one.
3. Schottky diode according to claim 1, which is characterized in that the face of first Schottky contact region (7)
Product increases one from the center of the Junction Barrier Schottky diode to edge every n first Schottky contact regions (7)
It is secondary, wherein n is the integer more than or equal to 2.
4. Schottky diode according to claim 1, which is characterized in that the width and depth of all grooves (4)
It is equal.
5. Schottky diode according to claim 1, which is characterized in that the depth of all P-type ion injection regions (3)
Degree is equal.
6. Schottky diode according to claim 1, which is characterized in that the P-type ion injection region (3) and described the
One metal layer (6) forms the second Schottky contact region or ohmic contact regions.
7. Schottky diode according to claim 1, which is characterized in that further include N+Substrate layer (1) is located at the N-
The lower surface of epitaxial layer (2).
8. Schottky diode according to claim 1, which is characterized in that it further include two silica separation layers (5),
It is located at the N-The surface at epitaxial layer (2) both ends.
9. Schottky diode according to claim 1, which is characterized in that further include second metal layer (8), be located at described
On the first metal layer (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910459859.1A CN110164983A (en) | 2019-05-29 | 2019-05-29 | A kind of Junction Barrier Schottky diode being gradually increased from center to edge Schottky contacts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910459859.1A CN110164983A (en) | 2019-05-29 | 2019-05-29 | A kind of Junction Barrier Schottky diode being gradually increased from center to edge Schottky contacts |
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| Publication Number | Publication Date |
|---|---|
| CN110164983A true CN110164983A (en) | 2019-08-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910459859.1A Pending CN110164983A (en) | 2019-05-29 | 2019-05-29 | A kind of Junction Barrier Schottky diode being gradually increased from center to edge Schottky contacts |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010003841A (en) * | 2008-06-19 | 2010-01-07 | Toyota Motor Corp | Vertical type schottky diode |
| CN106298469A (en) * | 2015-05-13 | 2017-01-04 | 国网智能电网研究院 | A kind of ion injection method of SiC JBS device |
| US20180358478A1 (en) * | 2017-06-09 | 2018-12-13 | AZ Power, Inc | Trench type junction barrier schottky diode with voltage reducing layer and manufacturing method thereof |
-
2019
- 2019-05-29 CN CN201910459859.1A patent/CN110164983A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010003841A (en) * | 2008-06-19 | 2010-01-07 | Toyota Motor Corp | Vertical type schottky diode |
| CN106298469A (en) * | 2015-05-13 | 2017-01-04 | 国网智能电网研究院 | A kind of ion injection method of SiC JBS device |
| US20180358478A1 (en) * | 2017-06-09 | 2018-12-13 | AZ Power, Inc | Trench type junction barrier schottky diode with voltage reducing layer and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 袁昊 等: "1200V 4H-SiC结势垒肖特基二极管温度特性研究", 《大功率变流技术》 * |
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