CN110112221A - A kind of Junction Barrier Schottky diode being able to suppress local ELECTROMIGRATION PHENOMENON - Google Patents
A kind of Junction Barrier Schottky diode being able to suppress local ELECTROMIGRATION PHENOMENON Download PDFInfo
- Publication number
- CN110112221A CN110112221A CN201910458057.9A CN201910458057A CN110112221A CN 110112221 A CN110112221 A CN 110112221A CN 201910458057 A CN201910458057 A CN 201910458057A CN 110112221 A CN110112221 A CN 110112221A
- Authority
- CN
- China
- Prior art keywords
- schottky diode
- junction barrier
- type ion
- barrier schottky
- ion injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 64
- 238000002347 injection Methods 0.000 claims abstract description 37
- 239000007924 injection Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 230000002829 reductive effect Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 230000002441 reversible effect Effects 0.000 abstract description 6
- 150000002500 ions Chemical class 0.000 description 28
- 239000000463 material Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 5
- 229910019142 PO4 Inorganic materials 0.000 description 4
- 239000010452 phosphate Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of Junction Barrier Schottky diodes for being able to suppress local ELECTROMIGRATION PHENOMENON, including N- epitaxial layer；Several P-type ion injection regions, are arranged at intervals in N- epitaxial layer, and the interval between two neighboring P-type ion injection region is gradually reduced from the edge of Junction Barrier Schottky diode to center according to first trend or second trend；The first metal layer is located at N- epitaxial layer upper surface, and the interface of the interface of P-type ion injection region and the first metal layer, N- epitaxial layer and the first metal layer is Schottky contacts.Interval between the two neighboring P-type ion injection region of Junction Barrier Schottky diode proposed by the invention is gradually reduced from the edge of Junction Barrier Schottky diode to center, to under the premise of guaranteeing that reverse leakage current and forward conduction resistance are not degenerated, the temperature difference of Junction Barrier Schottky diode is reduced, the generation of local ELECTROMIGRATION PHENOMENON is effectively inhibited.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of junction barrier for being able to suppress local ELECTROMIGRATION PHENOMENON
Schottky diode.
Background technique
Wide bandgap semiconductor materials silicon carbide has biggish forbidden bandwidth, higher critical breakdown electric field, high heat conductance
With desirable physicals and the chemical characteristic such as high electronics saturation drift velocity, it is suitble to production high temperature, high pressure, high-power, Flouride-resistani acid phesphatase half
Conductor device.
In field of power electronics, JBS diode (Junction Barrier Schottky diode, Junction Barrier
Schottky Diode) it has been widely used, have the characteristics that good forward conduction characteristic, reverse leakage current are small.
But since the package area that JBS diode different location is contacted is different, lead to JBS diode different location
Radiating condition is different, eventually leads to JBS diode center temperature greater than its peripheral region temperature, and this temperature difference will lead to
JBS diode different location carrier mobility is different, and current distribution is uneven is even, and local ELECTROMIGRATION PHENOMENON occurs in JBS diode,
To influence the reliability of JBS diode.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, local electromigration is able to suppress the present invention provides one kind and is showed
The Junction Barrier Schottky diode of elephant.The technical problem to be solved in the present invention is achieved through the following technical solutions:
A kind of Junction Barrier Schottky diode being able to suppress local ELECTROMIGRATION PHENOMENON, comprising:
N- epitaxial layer；
Several P-type ion injection regions, are arranged at intervals in the N- epitaxial layer, and the two neighboring P-type ion
Interval between injection region is from the edge of the Junction Barrier Schottky diode to center according to first trend or second trend
It is gradually reduced；
The first metal layer is located at N- epitaxial layer upper surface, and the P-type ion injection region and the first metal layer
Interface be Schottky contacts or Ohmic contact, the interface of the N- epitaxial layer and the first metal layer is schottky junctions
Touching.
In one embodiment of the invention, the first trend is between the two neighboring P-type ion injection region
Interval is sequentially reduced from edge to the center of the Junction Barrier Schottky diode.
In one embodiment of the invention, the second trend is between the two neighboring P-type ion injection region
It is spaced the every M intervals from the edge of the Junction Barrier Schottky diode to center to reduce once, wherein M is greater than
Equal to 2.
In one embodiment of the invention, the depth of the P-type ion injection region is identical.
In one embodiment of the invention, the P-type ion injection region is of same size.
It in one embodiment of the invention, further include SiO2Spacer medium layer is located at the N- epitaxial layer and described the
Between one metal layer, and it is located at the end of the N- epitaxial layer.
In one embodiment of the invention, further include N+ substrate layer, be located at N- epitaxial layer lower surface.
In one embodiment of the invention, further include third metal layer, be located at N+ substrate layer lower surface.
Beneficial effects of the present invention:
Interval between the two neighboring P-type ion injection region of Junction Barrier Schottky diode proposed by the invention from
The edge of Junction Barrier Schottky diode to center is gradually reduced, to not have in guarantee reverse leakage current and forward conduction resistance
Under the premise of having degeneration, the temperature difference of Junction Barrier Schottky diode is reduced, local ELECTROMIGRATION PHENOMENON is effectively inhibited
Occur, improves the Performance And Reliability of Junction Barrier Schottky diode.
The present invention is described in further details below with reference to accompanying drawings and embodiments.
Detailed description of the invention
Fig. 1 is a kind of two pole of Junction Barrier Schottky for being able to suppress local ELECTROMIGRATION PHENOMENON provided in an embodiment of the present invention
The structural schematic diagram of pipe；
Fig. 2 is the Junction Barrier Schottky two that another kind provided in an embodiment of the present invention is able to suppress local ELECTROMIGRATION PHENOMENON
The structural schematic diagram of pole pipe；
Fig. 3 is a kind of two pole of Junction Barrier Schottky for being able to suppress local ELECTROMIGRATION PHENOMENON provided in an embodiment of the present invention
The schematic top plan view of pipe.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
Referring to Figure 1, Fig. 1 is a kind of junction barrier for being able to suppress local ELECTROMIGRATION PHENOMENON provided in an embodiment of the present invention
The structural schematic diagram of Schottky diode, the present embodiment provides a kind of junction barrier Xiao Te for being able to suppress local ELECTROMIGRATION PHENOMENON
Based diode, the Junction Barrier Schottky diode include:
N- epitaxial layer 3；
Several P-type ion injection regions 4, are arranged at intervals in the N- epitaxial layer 3, and the two neighboring p-type from
Interval between sub- injection region 4 becomes from the edge of the Junction Barrier Schottky diode to center according to first trend or second
Gesture is gradually reduced；
The first metal layer 6 is located at 3 upper surface of N- epitaxial layer, and the P-type ion injection region 4 and first gold medal
The interface for belonging to layer 6 is Schottky contacts or Ohmic contact, and the interface of the N- epitaxial layer 3 and the first metal layer 6 is
Schottky contacts.
Further, the N-Epitaxial layer 3 is the doping of phosphate material and carbofrax material, wherein the doping of phosphate material is dense
Degree is determining according to the breakdown voltage of required Junction Barrier Schottky diode, such as: the Junction Barrier Schottky diode
When breakdown voltage is 1200V, the phosphorus doping density is 1 × 1015/cm-3。
Further, the N-The thickness of epitaxial layer 3 is true according to the breakdown voltage of required Junction Barrier Schottky diode
It is fixed, such as: when the breakdown voltage of the Junction Barrier Schottky diode is 1200V, the N-Epitaxial layer 2 with a thickness of 10 μ
m。
Further, the first metal layer 6 of the present embodiment can be for example metallic nickel or Titanium, with a thickness of 50-
100nm。
Further, one layer of second metal layer can also be set on the first metal layer 6, and the second metal layer is metal
Al or Ag, with a thickness of 2-5 μm.
Specifically, it is first Xiao that the interface of P-type ion injection region 4 and the first metal layer 6, which is formed by Schottky contacts,
Special base contact zone 7 or ohmic contact regions, it is that the interface of N- epitaxial layer 3 and the first metal layer 6, which is formed by Schottky contacts,
Two Schottky contact regions 8, interval d between two neighboring P-type ion injection region 4 is from the edge of Junction Barrier Schottky diode
It is gradually reduced to center according to first trend or second trend, i.e. the Schottky contact area of the second Schottky contact region 8 is from knot
The edge of type barrier Schottky diode to center is gradually reduced according to first trend or first trend.
The Schottky contact area of second Schottky contact region 8 is pressed from the edge of Junction Barrier Schottky diode to center
It is gradually reduced according to first trend or second trend, i.e., JBS primitive unit cell is from the edge of the Junction Barrier Schottky diode to center
Be gradually reduced according to third trend or the 4th trend, each JBS primitive unit cell be by a P-type ion injection region 4 center line to
The region that the center line of its adjacent P-type ion injection region 4 is constituted.
Interval between the two neighboring P-type ion injection region for the Junction Barrier Schottky diode that the present embodiment is proposed
It is gradually reduced from the edge of Junction Barrier Schottky diode to center, thus guaranteeing reverse leakage current and forward conduction resistance
Under the premise of not degenerating, the temperature difference of Junction Barrier Schottky diode is reduced, effectively inhibits local ELECTROMIGRATION PHENOMENON
Generation, improve the Performance And Reliability of Junction Barrier Schottky diode.
Further, the first metal layer 6 of the present embodiment for example can be metallic nickel or Titanium.
In one embodiment, interval of the first trend between the two neighboring P-type ion injection region 4 is from institute
Edge to the center for stating Junction Barrier Schottky diode is sequentially reduced, i.e., from the edge of Junction Barrier Schottky diode into
The Schottky contact area of the second Schottky contact region of each of heart 8 is sequentially reduced.For example, Fig. 2 is referred to, junction type gesture in Fig. 2
It builds Schottky diode and is provided with 10 P-type ion injection regions 4 altogether, then altogether include 9 the second Schottky contact regions 8, it will be from a left side
Schottky contact area to 9 right the second Schottky contact regions 8 is successively denoted as WS1、WS2、WS3、WS4、WS5、WS6、WS7、WS8、
WS9, when it meets first trend variation, the schottky junctions of the second Schottky contact region 8 of the Junction Barrier Schottky diode
Contacting surface product meets following relationship:
WS1>WS2>WS3>WS4>WS5<WS6<WS7<WS8<WS9
In one embodiment, interval of the second trend between the two neighboring P-type ion injection region is from institute
The every M intervals for stating edge to the center of Junction Barrier Schottky diode reduce once, wherein M is more than or equal to 2, i.e.,
The Schottky contact area of every M the second Schottky contact regions from the edge of Junction Barrier Schottky diode to center reduces
Once.For example, Junction Barrier Schottky diode is provided with 10 P-type ion injection regions 4 altogether, then it altogether include 9 the second Xiao Te
The Schottky contact area of 9 the second Schottky contact regions 8 from left to right is successively denoted as W by base contact zone 8S1、WS2、WS3、
WS4、WS5、WS6、WS7、WS8、WS9, when it meets second trend variation, M takes 2, and the of the Junction Barrier Schottky diode
The Schottky contact area of two Schottky contact regions 8 meets following relationship:
WS1=WS2>WS3=WS4>WS5<WS6=WS7<WS8=WS9
The M of the present embodiment can also take other values, for example, 3,4 or 5 etc., and the present embodiment is not specifically limited it, this
Field technical staff can select according to actual needs.
The present embodiment is by the Schottky contact area of the second Schottky contact region 8 from Junction Barrier Schottky diode
Edge to center is not only guaranteeing Junction Barrier Schottky diode in such a way that first trend or second trend are gradually reduced
Reverse leakage current and under the premise of forward conduction resistance do not degenerate, also reduce the temperature of Junction Barrier Schottky diode
Difference, so that the mobility of the carrier of Junction Barrier Schottky diode different location is identical, so that homogeneous current distribution, thus
The generation for effectively inhibiting the local ELECTROMIGRATION PHENOMENON of Junction Barrier Schottky diode, improves two pole of Junction Barrier Schottky
The reliability of pipe.
The generation type of the P-type ion injection region 4 of the present embodiment can be the mode of ion implanting, be also possible to by
Junction Barrier Schottky diode corresponding position growth oxidation layer mask is formed.
Further, the doping concentration of P-type ion injection region 4 for example can be for more than or equal to 1*1017cm-3。
Further, P-type ion injection region 4 is of same size, such as can be for more than or equal to 2 μm.
Further, the depth of P-type ion injection region 4 is identical, such as can be for more than or equal to 0.9 μm.
Further, the distance between two neighboring P-type ion injection region 4 for example can be for more than or equal to 2 μm.
Further, Fig. 3 is referred to, the shape of P-type ion injection region 4 can be bar shaped, rectangular or square, can be with
For other shapes, the present embodiment does not do specific restriction to the shape of P-type ion injection region 4.
In one embodiment, the Junction Barrier Schottky diode of the present embodiment can also include SiO2Spacer medium layer
5, between the N- epitaxial layer 3 and the first metal layer 6, and it is located at the end of the N- epitaxial layer 3.
Preferably, SiO2Spacer medium layer 5 with a thickness of 200-500nm.
In one embodiment, the Junction Barrier Schottky diode of the present embodiment further includes N+ substrate layer 2, is located at described
3 lower surface of N- epitaxial layer.
In one embodiment, the Junction Barrier Schottky diode of the present embodiment further includes third metal layer 1, is located at institute
State 2 lower surface of N+ substrate layer.
Preferably, the N+Substrate layer 2 is highly doped N-shaped silicon carbide, and the N-shaped silicon carbide is phosphate material and silicon carbide
The doping of material, the doping concentration of phosphate material are >=1 × 1019/cm-3。
Preferably, the N+Substrate layer 2 with a thickness of 200 μm -500 μm.
In one embodiment, the Junction Barrier Schottky diode of the present embodiment further includes third metal layer 1, is located at institute
State 2 lower surface of N+ substrate layer, and third metal layer 1 and N+Substrate layer 2 forms Ohmic contact.
Preferably, the third metal layer 1 is W metal, with a thickness of 50-100nm.
Further, one layer of the 4th metal layer can also be set in the lower surface of third metal layer 1, the 4th metal layer can be with
It stacks gradually and to be formed for the metal of Ti/Ni/Ag, with a thickness of 2-5 μm.
The present embodiment can with the copper or aluminum conductor from Ag layers of second metallic surface extract after form institute
State cathode.
Interval between the two neighboring P-type ion injection region for the Junction Barrier Schottky diode that the present embodiment is proposed
It is gradually reduced from the edge of Junction Barrier Schottky diode to center, thus guaranteeing reverse leakage current and forward conduction resistance
Under the premise of not degenerating, the temperature difference of Junction Barrier Schottky diode is reduced, effectively inhibits local ELECTROMIGRATION PHENOMENON
Generation, improve the Performance And Reliability of Junction Barrier Schottky diode.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
What can be combined in any suitable manner in one or more embodiment or examples.In addition, those skilled in the art can say this
Different embodiments or examples described in bright book are engaged and are combined.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (8)
1. a kind of Junction Barrier Schottky diode for being able to suppress local ELECTROMIGRATION PHENOMENON characterized by comprising
N- epitaxial layer；
Several P-type ion injection regions, are arranged at intervals in the N- epitaxial layer, and the two neighboring P-type ion injection
Interval between area from the edge of the Junction Barrier Schottky diode to center according to first trend or second trend gradually
Reduce；
The first metal layer is located at N- epitaxial layer upper surface, and the friendship of the P-type ion injection region and the first metal layer
Interface is Schottky contacts or Ohmic contact, and the interface of the N- epitaxial layer and the first metal layer is Schottky contacts.
2. Schottky diode according to claim 1, which is characterized in that the first trend is the two neighboring P
Interval between type ion implanted region is sequentially reduced from edge to the center of the Junction Barrier Schottky diode.
3. Schottky diode according to claim 1, which is characterized in that the second trend is the two neighboring P
Every M of the interval from the edge of the Junction Barrier Schottky diode to the center intervals between type ion implanted region subtract
It is small primary, wherein M is more than or equal to 2.
4. Schottky diode according to claim 1, which is characterized in that the depth of the P-type ion injection region is identical.
5. Schottky diode according to claim 1, which is characterized in that the P-type ion injection region it is of same size.
6. Schottky diode according to claim 1, which is characterized in that further include SiO2Spacer medium layer is located at described
Between N- epitaxial layer and the first metal layer, and it is located at the end of the N- epitaxial layer.
7. Schottky diode according to claim 1, which is characterized in that further include N+ substrate layer, be located at outside the N-
Prolong a layer lower surface.
8. Schottky diode according to claim 7, which is characterized in that further include third metal layer, be located at the N+
Substrate layer lower surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910458057.9A CN110112221A (en) | 2019-05-29 | 2019-05-29 | A kind of Junction Barrier Schottky diode being able to suppress local ELECTROMIGRATION PHENOMENON |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910458057.9A CN110112221A (en) | 2019-05-29 | 2019-05-29 | A kind of Junction Barrier Schottky diode being able to suppress local ELECTROMIGRATION PHENOMENON |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110112221A true CN110112221A (en) | 2019-08-09 |
Family
ID=67492933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910458057.9A Pending CN110112221A (en) | 2019-05-29 | 2019-05-29 | A kind of Junction Barrier Schottky diode being able to suppress local ELECTROMIGRATION PHENOMENON |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110112221A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113937168A (en) * | 2020-07-13 | 2022-01-14 | 珠海格力电器股份有限公司 | Silicon carbide junction barrier schottky semiconductor device and method for manufacturing same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080277669A1 (en) * | 2007-05-10 | 2008-11-13 | Denso Corporation | SiC semiconductor having junction barrier Schottky device |
| JP2010003841A (en) * | 2008-06-19 | 2010-01-07 | Toyota Motor Corp | Vertical type schottky diode |
| CN109244146A (en) * | 2018-11-09 | 2019-01-18 | 无锡新洁能股份有限公司 | Optimize the SiC schottky diode and its manufacturing method of heat distribution |
-
2019
- 2019-05-29 CN CN201910458057.9A patent/CN110112221A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080277669A1 (en) * | 2007-05-10 | 2008-11-13 | Denso Corporation | SiC semiconductor having junction barrier Schottky device |
| JP2010003841A (en) * | 2008-06-19 | 2010-01-07 | Toyota Motor Corp | Vertical type schottky diode |
| CN109244146A (en) * | 2018-11-09 | 2019-01-18 | 无锡新洁能股份有限公司 | Optimize the SiC schottky diode and its manufacturing method of heat distribution |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113937168A (en) * | 2020-07-13 | 2022-01-14 | 珠海格力电器股份有限公司 | Silicon carbide junction barrier schottky semiconductor device and method for manufacturing same |
| WO2022011983A1 (en) * | 2020-07-13 | 2022-01-20 | 珠海格力电器股份有限公司 | Silicon carbide junction barrier schottky semiconductor device and method of manufacturing same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4314277B2 (en) | SiC Schottky barrier semiconductor device | |
| US10396162B2 (en) | Silicon carbide semiconductor device | |
| JP2003523086A (en) | Semiconductor device and method of manufacturing material for semiconductor device | |
| CN110098264A (en) | A kind of Junction Barrier Schottky diode | |
| CN106601789B (en) | A kind of gallium nitride based schottky barrier rectifier | |
| US20150287840A1 (en) | Semiconductor device | |
| CN104981909A (en) | Trench-based device with improved trench protection | |
| CN110197853A (en) | A kind of junction barrier schottky diode | |
| CN104465793B (en) | Schottky barrier diode and method for manufacturing Schottky barrier diode | |
| KR200470297Y1 (en) | Structure of schottky diode | |
| CN103208529B (en) | Semiconductor diode and the method for forming semiconductor diode | |
| CN110112221A (en) | A kind of Junction Barrier Schottky diode being able to suppress local ELECTROMIGRATION PHENOMENON | |
| US20210098579A1 (en) | Schottky diode with high breakdown voltage and surge current capability using double p-type epitaxial layers | |
| CN110098263A (en) | A kind of groove profile Junction Barrier Schottky diode | |
| US11316052B2 (en) | Junction barrier schottky diode | |
| CN110164982A (en) | A kind of Junction Barrier Schottky diode | |
| CN110197852A (en) | A kind of mixing PiN Schottky diode of partial groove ion implanting | |
| US10854762B2 (en) | Semiconductor device | |
| CN110212023B (en) | Junction type barrier Schottky diode capable of reducing reverse leakage current | |
| JP2012182405A (en) | Semiconductor rectifier | |
| CN107275382A (en) | A kind of device that JTE terminal structures are combined based on table top multi-region and preparation method thereof | |
| CN110212021A (en) | A kind of mixing PiN Schottky diode of integrated metal oxide semiconductor | |
| CN110190117A (en) | A kind of groove profile mixing PiN Schottky diode improving forward characteristic | |
| CN110164983A (en) | A kind of Junction Barrier Schottky diode being gradually increased from center to edge Schottky contacts | |
| JP2017027977A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190809 |
|
| RJ01 | Rejection of invention patent application after publication |