CN110158154B - Current stabilizer and crystal pulling furnace - Google Patents
Current stabilizer and crystal pulling furnace Download PDFInfo
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- CN110158154B CN110158154B CN201910561753.2A CN201910561753A CN110158154B CN 110158154 B CN110158154 B CN 110158154B CN 201910561753 A CN201910561753 A CN 201910561753A CN 110158154 B CN110158154 B CN 110158154B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a current stabilizer and a crystal pulling furnace, wherein the current stabilizer is applied to the crystal pulling furnace and comprises: the first flow stabilizing cover is provided with a plurality of first through holes and used for being installed in an auxiliary furnace chamber of the crystal pulling furnace so as to regulate the flow direction of inert gas introduced into the crystal pulling furnace; and the second flow stabilizing cover is provided with a plurality of second through holes, is used for being installed in an auxiliary furnace chamber of the crystal pulling furnace, is opposite to the first flow stabilizing cover and is used for adjusting the flow direction of the inert gas adjusted by the first flow stabilizing cover. According to the flow stabilizing device disclosed by the invention, the flow direction of inert gas can be restrained, the swing amplitude of the silicon single crystal rod is reduced, the probability of the dislocation phenomenon of the growth of the single crystal is reduced, and the pollution and the erosion of impurities to the side walls of the crystal bar and the thermal field component are avoided.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a current stabilizer and a crystal pulling furnace.
Background
The magnetic Field Czochralski method, MCZ (magnetic Field Applied Czochralski method), is currently the most popular method for pulling crystals to inhibit thermal convection of the polysilicon melt during crystal growth and to reduce the oxygen content in the single crystal silicon rod.
In the prior art, a crystal pulling furnace is adopted to manufacture a single crystal silicon rod, a quartz crucible in the crystal pulling furnace is used for melting a polycrystalline silicon raw material, and the quartz crucible can react with the following substances in a molten state of the polycrystalline silicon raw material: SiO 22(s) → Si (l) +2O, oxygen atoms generated from the quartz crucible wall are uniformly distributed in the silicon solution by the stirring action of natural convection, and part of the oxygen atoms existing on the surface of the silicon solution can react as follows: si (l) + O → SiO (g), which volatilizes away in the form of silicon monoxide (SiO). In order to control impurities in the crystal pulling furnace, the furnace is vacuumized and then argon is introduced. As a protective gas, argon is fed through the upper part of the auxiliary furnace chamber, and devices such as a guide cylinder and the like are arranged in the main furnace chamber to adjust the flow direction and the speed of the argon and improve the oxide transmission direction in the crystal pulling furnace. However, when argon is passed into the side furnace chamber of the crystal pulling furnace, it is due to the presence of argon in the furnaceThe speed range is between 0.9m/s and 8.0m/s, so that the overall turbulence in the auxiliary furnace chamber is more, the pulling rope is longer, the single crystal silicon rod is easy to shake in the initial drawing stage, the stable contact of a crystal growth interface is not facilitated, the crystal dislocation is easy to cause, the remelting frequency of the crystal rod is increased, the cost is increased, and the traditional guide cylinder can cause more turbulence in the main furnace chamber, the impurity is not discharged conveniently, and the impurity is adhered to the side wall of the thermal field component.
Disclosure of Invention
In view of the above, the present invention provides a flow stabilizer, which is installed in an auxiliary furnace chamber of a crystal pulling furnace, so as to adjust the flow direction of an inert gas introduced into the auxiliary furnace chamber, thereby solving the problems that the turbulence of the gas in the auxiliary furnace chamber is large, the single crystal silicon rod is easy to shake in the initial growth stage, the contact between a crystal growth interface and the surface of a melt is unstable, and the crystal is easy to generate dislocation.
In order to solve the technical problem, the invention provides a flow stabilizer.
According to the embodiment of the first aspect of the invention, the flow stabilizer is applied to the crystal pulling furnace and comprises the following components:
the first flow stabilizing cover is provided with a plurality of first through holes and used for being installed in an auxiliary furnace chamber of the crystal pulling furnace so as to regulate the flow direction of inert gas introduced into the crystal pulling furnace;
and the second flow stabilizing cover is provided with a plurality of second through holes, is used for being installed in an auxiliary furnace chamber of the crystal pulling furnace, is opposite to the first flow stabilizing cover and is used for adjusting the flow direction of the inert gas adjusted by the first flow stabilizing cover.
Preferably, the first flow stabilizing cover is formed into a funnel shape with a wide opening at one end and a narrow opening at the other end, the first flow stabilizing cover is used for rectifying the inert gas introduced into the crystal pulling furnace, the inert gas flows in from the wide opening end of the first flow stabilizing cover, and flows out from the narrow opening end;
the second flow stabilizing cover is in a funnel shape with a wide opening at one end and a narrow opening at the other end, the narrow opening end of the second flow stabilizing cover is opposite to the narrow opening end of the first flow stabilizing cover, and the second flow stabilizing cover is used for uniformly distributing the rectified inert gas.
Preferably, the flow stabilizer further comprises:
and the distance adjusting mechanism is used for adjusting the distance between the first flow stabilizing cover and the second flow stabilizing cover so as to enlarge a flow stabilizing interval.
Preferably, the spacing adjustment mechanism includes:
the distance adjusting support is connected with the first flow stabilizing cover and the second flow stabilizing cover respectively, or the distance adjusting support is connected with the first flow stabilizing cover or the second flow stabilizing cover;
the first driving mechanism is connected with the interval adjusting support and used for driving the interval adjusting support to enable the interval adjusting support to drive the first flow stabilizing cover and the second flow stabilizing cover to approach or depart from each other.
Preferably, the flow stabilizer further comprises:
and the height adjusting mechanism is connected with the interval adjusting mechanism and is used for driving the interval adjusting mechanism to move so as to adjust the height of the first flow stabilizing cover and the second flow stabilizing cover in an auxiliary furnace chamber of the crystal pulling furnace.
Preferably, the first driving mechanism is connected with the spacing adjustment bracket through a transmission component, and the transmission component comprises a transmission belt or a transmission chain.
Preferably, each first flow stabilization cover and each second flow stabilization cover are a group, and the flow stabilizer comprises a plurality of groups of first flow stabilization covers and second flow stabilization covers.
Preferably, the aperture ratio of the first flow stabilization cover and the second flow stabilization cover is 80% -95%.
Preferably, the cross section of the first through hole and the second through hole is circular, square, triangular or a mixture thereof.
Preferably, the cross section of the first through hole and the cross section of the second through hole are circular, and the aperture range of the first through hole and the aperture range of the second through hole are between 5 mm and 20 mm.
The crystal pulling furnace comprises a furnace body, wherein the furnace body comprises a main furnace chamber and an auxiliary furnace chamber communicated with the main furnace chamber, and the auxiliary furnace chamber is internally provided with a flow stabilizer according to the embodiment.
Preferably, the flow stabilizer comprises an interval adjusting mechanism for adjusting the distance between the first flow stabilization cover and the second flow stabilization cover to enlarge a flow stabilization interval;
one ends of the first flow stabilizing cover and the second flow stabilizing cover penetrate through the furnace body of the auxiliary furnace chamber, and one end of the first flow stabilizing cover and/or one end of the second flow stabilizing cover are/is connected with the interval adjusting mechanism.
Preferably, the spacing adjustment mechanism includes:
the distance adjusting support is connected with one end of the first flow stabilizing cover and one end of the second flow stabilizing cover respectively, or the distance adjusting support is connected with one end of the first flow stabilizing cover or one end of the second flow stabilizing cover;
and the first driving mechanism is connected with the interval adjusting support and is used for driving the interval adjusting support to move so that the first flow stabilizing cover and the second flow stabilizing cover are arranged in the auxiliary furnace chamber to approach or depart from each other.
The technical scheme of the invention has the following beneficial effects:
1) according to the flow stabilizing device provided by the embodiment of the invention, the flow direction of the inert gas introduced into the auxiliary furnace chamber of the crystal pulling furnace can be regulated so as to reduce the turbulence intensity of the inert gas inside the auxiliary furnace chamber of the crystal pulling furnace, the swinging of the silicon single crystal rod caused by gas flow is reduced by restricting the flow direction of the inert gas, the stable contact of the silicon single crystal rod and a molten liquid level is facilitated, the probability of phenomena such as dislocation of growth of the silicon single crystal is reduced, and meanwhile, impurities in the main furnace chamber are carried to the auxiliary furnace chamber by turbulent flow to cause pollution and erosion to the side walls of the silicon single crystal rod and thermal field components;
2) the first flow stabilizing cover and the second flow stabilizing cover have higher opening rates and can be set according to actual conditions, the flow velocity of inert gas in the furnace is further controlled, impurities in the main furnace chamber are reduced and carried to the auxiliary furnace chamber by turbulent flow, and pollution and erosion to the side walls of the crystal bar and the thermal field component are prevented;
3) the distance between the first flow stabilizing cover and the second flow stabilizing cover can be changed through the distance adjusting mechanism, the flow stabilizing interval is enlarged, the single crystal growth environment of the main furnace chamber is further improved, the occurrence of turbulent flow is inhibited, and the probability of crystal remelting is reduced;
4) the first flow stabilizing cover and the second flow stabilizing cover are positioned at the height of the auxiliary furnace chamber, so that the growth of crystal bars with different lengths can be adapted.
Drawings
FIG. 1a is a front view of one configuration of a flow stabilizer of the present invention;
FIG. 1b is a top view of the flow stabilizer of FIG. 1;
FIG. 1c is a front view of another configuration of the flow stabilizer of the present invention;
FIG. 1d is a top view of the flow stabilizer of FIG. 1 c;
FIG. 1e is a front view of yet another configuration of a flow stabilizer of the present invention;
FIG. 1f is a top view of the flow stabilizer of FIG. 1 e;
FIG. 1g is a front view of yet another configuration of a flow stabilizer of the present invention;
FIG. 2a is a schematic structural view of a first flow stabilizer cap and a second flow stabilizer cap of the present invention;
FIG. 2b is another schematic structural view of the first and second flow stabilizer covers of the present invention;
FIG. 2c is yet another schematic structural view of the first and second flow stabilizer covers of the present invention;
FIG. 2d is yet another schematic structural view of the first and second flow stabilizer covers of the present invention;
FIG. 2e is yet another schematic structural view of the first and second flow stabilizer covers of the present invention;
FIG. 2f is yet another schematic structural view of the first and second flow stabilizer covers of the present invention;
FIG. 2g is yet another schematic structural view of the first and second flow stabilizer covers of the present invention;
FIG. 2h is yet another schematic structural view of the first and second flow stabilizer covers of the present invention;
FIG. 2i is yet another schematic structural view of the first and second flow stabilizer covers of the present invention;
FIG. 3a is a schematic view of a transmission component of the present invention;
FIG. 3b is another schematic structural view of the transmission member of the present invention;
FIG. 3c is a further schematic view of the transmission component of the present invention;
FIG. 3d is a further schematic view of the transmission component of the present invention;
FIG. 4 is a view showing the state of gas flow in a crystal pulling furnace according to the present invention;
FIG. 5 is a view showing the state of gas flow in another crystal pulling furnace according to the present invention.
Reference numerals
A flow stabilizer 100;
a first flow stabilizer cap 110; a first through-hole 111;
a second flow stabilization cap 120; a second through hole 121;
a spacing adjustment mechanism 130; a spacing adjustment bracket 131; a first drive mechanism 132;
a height adjustment mechanism 140;
a crystal pulling furnace 200;
a furnace body 210; a main furnace chamber 211; a sub-furnace chamber 212; a draft tube 213;
an inert gas 300;
an impurity 400.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
The following first describes the flow stabilizer 100 according to an embodiment of the present invention in detail with reference to the drawings.
As shown in fig. 1a to 5, a flow stabilizer 100 according to an embodiment of the present invention, which is applied to a crystal pulling furnace 200, includes a first flow stabilizer cap 110 and a second flow stabilizer cap 120.
Specifically, a plurality of first through holes 111 are arranged on the first flow stabilizing hood 110, and the first flow stabilizing hood 110 is used for being installed in the auxiliary furnace chamber 212 of the crystal pulling furnace 200 so as to regulate the flow direction of the inert gas 300 introduced into the crystal pulling furnace 200; the second flow stabilizing hood 120 is provided with a plurality of second through holes 121, and the second flow stabilizing hood 120 is used for being installed in the auxiliary furnace chamber 212 of the crystal pulling furnace 200, is arranged opposite to the first flow stabilizing hood 110, and is used for adjusting the flow direction of the inert gas 300 adjusted by the first flow stabilizing hood 110.
That is, after the inert gas 300 is introduced into the sub-furnace chamber 212 of the crystal pulling furnace 200, the inert gas 300 firstly passes through the first through hole 111 of the first flow stabilizing cover 110, the flowing direction is combed, the original turbulent flow is changed into the vertical downward flowing direction, so that the turbulence phenomenon of the inert gas 300 is reduced, then the gas flows out from the second through hole 121 of the second flow stabilizing cover 120 and is combed at the same time, a more stable and ordered gas flow is formed, when the combed gas flows through the surface of the monocrystalline silicon rod of the main furnace chamber 211, the swinging amplitude of the monocrystalline silicon rod caused by the influence of the silicon rod gas flow can be reduced, the stable contact between the monocrystalline silicon rod and the molten liquid level is facilitated, the occurrence probability of phenomena of monocrystalline growth dislocation and the like is reduced, and the production efficiency of. Meanwhile, because the airflow flows uniformly and stably, the impurity 400 in the main furnace chamber 211 can be reduced to be carried to the auxiliary furnace chamber 212 by random flow, which is beneficial to discharging the impurity 400 and avoids the problems of pollution and erosion of the impurity 400 to the side walls of the crystal bar and the thermal field component.
Therefore, according to the flow stabilizer 100 provided by the embodiment of the invention, the flow direction of the inert gas 300 introduced into the auxiliary furnace chamber 212 of the crystal pulling furnace 200 can be combed, the gas flow direction is more orderly, the turbulence intensity of the inert gas 300 in the auxiliary furnace chamber 212 of the crystal pulling furnace 200 can be reduced, the flow direction of the inert gas 300 is restricted, the swinging of the silicon single crystal rod caused by the gas flow is reduced, the stable contact of the silicon single crystal rod and the molten liquid level is facilitated, the probability of occurrence of phenomena such as dislocation of the growth of the silicon single crystal is reduced, the production efficiency of the silicon single crystal rod is improved, the impurities 400 in the main furnace chamber 211 can be reduced from being carried to the auxiliary furnace chamber 212 by turbulence, and the problems of pollution, erosion and the like of the impurities 400 to the.
Preferably, as shown in fig. 1c, 4 and 5, the first flow stabilization cover 110 is formed in a funnel shape with one wide end and the other narrow end, the first flow stabilization cover 110 is used for rectifying the inert gas 300 introduced into the crystal pulling furnace 200, the inert gas 300 flows in from the wide end of the first flow stabilization cover 110 and flows out from the narrow end, the second flow stabilization cover 120 is formed in a funnel shape with one wide end and the other narrow end, the narrow end of the second flow stabilization cover 120 is arranged opposite to the narrow end of the first flow stabilization cover 110, and the second flow stabilization cover 120 is used for evenly distributing the rectified inert gas 300.
That is, the first flow stabilizing cover 110 and the second flow stabilizing cover 120 are funnel-shaped, that is, one end is a wide mouth, the other end is a narrow mouth, the narrow mouth end of the first flow stabilizing cover 110 is adjacent to the narrow mouth end of the second flow stabilizing cover 120, when in flow stabilization, the inert gas 300 firstly flows in from the wide-mouth end of the first flow stabilizing cover 110 and flows out from the narrow-mouth end, the flow direction of the inert gas 300 is combed and rectified after passing through the first through hole 111, the turbulence phenomenon of the gas flow of the inert gas 300 is reduced, then the gas flow flows in from the narrow-mouth end of the second flow stabilizing cover 120 and flows out from the wide-mouth end, the rectified gas flow is evenly divided through the second through hole 121, more stable and ordered air flow is formed, the swinging amplitude of the single crystal silicon rod due to the influence of the air flow is further reduced, the occurrence probability of phenomena such as single crystal growth dislocation and the like is reduced, the production efficiency of the single crystal silicon rod is further improved, the discharge of impurities 400 is more facilitated, and the crystal bar and the thermal field component are better protected.
In the present invention, the shapes of the first flow stabilization cover 110 and the second flow stabilization cover 120 are not limited thereto, and in other embodiments of the present invention, other shapes of flow stabilization covers, such as a cone, may be adopted, and the shape may be designed according to the shape of the crystal pulling furnace sub-furnace chamber 212, and the shapes of the first flow stabilization cover 110 and the second flow stabilization cover 120 may also be different.
The inert gas 300 in the present invention may preferably be argon, which has better stability as a protective gas.
According to one embodiment of the present invention, the flow stabilizer 100 further includes a spacing adjustment mechanism 130 for adjusting the distance between the first and second flow stabilization caps 110, 120 to expand the flow stabilization interval.
In other words, the first flow stabilizing cover 110 is connected to the second flow stabilizing cover 120 through the distance adjusting mechanism 130, and the distance between the first flow stabilizing cover 110 and the second flow stabilizing cover 120 can be adjusted by the distance adjusting mechanism 130, so that the airflow passing through the first flow stabilizing cover 110 flows to the second flow stabilizing cover 120 after passing through a longer flow stabilizing interval, the flow rate of the gas is further stabilized, and the airflow passes through the second flow stabilizing cover 120 to be more stable and orderly, so as to further improve the growth environment of the single crystal silicon rod in the main furnace chamber 211.
Preferably, the distance adjusting mechanism 130 includes a distance adjusting support 131 and a first driving mechanism 132, the distance adjusting support 131 is connected with the first flow stabilizing cover 110 and the second flow stabilizing cover 120 respectively, or the distance adjusting support 131 is connected with the first flow stabilizing cover 110 or the second flow stabilizing cover 120, the first driving mechanism 132 is connected with the distance adjusting support 131 for driving the distance adjusting support 131, so that the distance adjusting support 131 drives the first flow stabilizing cover 110 and the second flow stabilizing cover 120 to approach to each other or depart from each other.
That is to say, first stationary flow cover 110 and second stationary flow cover 120 can be connected with interval regulation support 131 respectively, also can first stationary flow cover and interval regulation leg joint, or second stationary flow cover 120 is connected with interval regulation support 131, when interval regulation support 131 is connected with first stationary flow cover 110 and second stationary flow cover 120, first actuating mechanism 132 can drive interval regulation support 131 and drive first stationary flow cover 110 and second stationary flow cover 120 and draw close to each other or keep away from each other, and then adjust the distance between first stationary flow cover 110 and the second stationary flow cover 120, this distance can effectual improvement airflow's stationary flow effect, make the airflow adjust the direction once more after this interval, not only be convenient for control the velocity of flow, the flow direction of regulation airflow that can be better again. The distance adjusting bracket 131 may be connected to the first flow stabilization cover 110 and the second flow stabilization cover 120 may be fixed, or the first flow stabilization cover 110 may be fixed and the distance adjusting bracket 131 may be connected to the second flow stabilization cover 120, and the distance between the first flow stabilization cover 110 and the second flow stabilization cover 120 may be adjusted by driving the first flow stabilization cover 110 or the second flow stabilization cover 120.
Preferably, the first driving mechanism 132 is connected with the spacing adjustment bracket 131 through a transmission member, which includes a transmission belt or a transmission chain.
As shown in fig. 3a to 3d, the first driving mechanism 132 and the spacing adjusting bracket 131 may be connected by a transmission belt or a transmission chain, the transmission belt may be a transmission mode of a gear and a transmission belt, or a transmission mode of a transmission chain and a gear, and the structure has a better transmission effect and moves more stably. Of course, other structures may be adopted in other embodiments of the present invention to implement that the first driving mechanism 132 drives the interval adjusting bracket 131 to move, and further implement that the first driving mechanism 132 drives the first flow stabilizing cover 110 or the second flow stabilizing cover 120 to move, where the first driving mechanism 132 may adopt a motor. A driving method such as a cylinder may be adopted, and the present invention is not limited thereto.
According to another embodiment of the invention, the flow stabilizer 100 further comprises a height adjustment mechanism 140, and the height adjustment mechanism 140 is connected with the spacing adjustment mechanism 130 for driving the spacing adjustment mechanism 130 to move to adjust the height of the first flow stabilization cap 110 and the second flow stabilization cap 120 in the sub furnace chamber 212 of the crystal pulling furnace 200.
As shown in FIG. 5, the height adjusting mechanism 140 is connected with the spacing adjusting mechanism 130, and the height adjusting mechanism 140 can drive the spacing adjusting mechanism 130 to move up and down so as to adjust the heights of the first flow stabilizing hood 110 and the second flow stabilizing hood 120 in the crystal pulling furnace sub-furnace chamber 212, so that the crystal pulling furnace can adapt to the growth of crystal bars with different lengths, and the use flexibility of the crystal pulling furnace is improved.
Preferably, the height adjusting mechanism 140 and the spacing adjusting mechanism 130 may also be connected by a transmission component, and the specific structure can refer to the transmission component of the above embodiments, which is not described herein again.
According to some embodiments of the present invention, each first flow stabilizer cap 110 and each second flow stabilizer cap 120 are in a group, and the flow stabilizer 100 includes multiple groups of first flow stabilizer caps 110 and second flow stabilizer caps 120.
As shown in fig. 1e to fig. 1g, the flow stabilizer 100 includes a combination of a plurality of sets of the first flow stabilization covers 110 and the second flow stabilization covers 120, that is, a combination of a plurality of sets of the first flow stabilization covers 110 and the second flow stabilization covers 120 may be disposed in the auxiliary furnace chamber 212 of the crystal pulling furnace according to actual conditions during use, or a combination of a plurality of sets of the first flow stabilization covers 110 and the second flow stabilization covers 120 may be provided, so that the flow direction and the flow rate of the inert gas 300 in the auxiliary furnace chamber 212 of the crystal pulling furnace may be better adjusted under appropriate conditions, and the flexibility of use of the flow stabilizer 100 may be further improved.
Optionally, the aperture ratio of the first flow stabilizing cover 110 and the second flow stabilizing cover 120 is 80% to 95%.
That is, the opening ratio of the first flow stabilizing cover 110 and the second flow stabilizing cover 120 can be controlled between 80% and 95%, and the opening ratio can better control the flow speed and the distribution uniformity of the inert gas 300, so as to ensure the smooth and orderly flow condition of the gas, wherein the opening ratio of the first flow stabilizing cover 110 is the percentage of the sum of the cross-sectional areas of all the first through holes 111 on the first flow stabilizing cover 110 to the surface area of the outer peripheral wall of the first flow stabilizing cover 110, and the opening ratio of the second flow stabilizing cover 120 is the percentage of the sum of the cross-sectional areas of all the second through holes 121 on the second flow stabilizing cover 120 to the surface area of the outer peripheral wall of the second flow stabilizing cover 120.
Further, the cross-sections of the first through-hole 111 and the second through-hole 211 are circular, square, triangular, or a mixture thereof.
As shown in fig. 2a to 2e, the cross-sectional shapes of the first through hole 111 and the second through hole 211 can be set according to actual conditions, and different shapes and sizes can affect the opening ratio, so that a circular shape, a triangular shape, a square shape or other shapes can be selected according to actual conditions, or a mixture of several shapes can be selected to ensure that the opening ratio is controlled to 80% to 95%, wherein the cross-sectional shapes of the holes are not limited.
In a preferred embodiment of the present invention, the cross-sections of the first through hole 111 and the second through hole 211 are circular, and the aperture of the first through hole 111 and the aperture of the second through hole 211 are in the range of 5-20 mm.
That is, the size of the aperture in the present invention can be limited within a certain range, the aperture ratio can be ensured by controlling the size of the aperture, and preferably, when the cross-sections of the first through hole 111 and the second through hole 211 are circular, the aperture range is controlled between 5 mm to 20mm, so as to better control the flow direction and the flow rate of the air flow. Of course, in other embodiments of the present invention, the cross-sectional shapes and the sizes of the apertures of the first through hole 111 and the second through hole 120 may be adjusted according to the sizes of the surface areas of the first flow stabilization cover 110 and the second flow stabilization cover 120, which is not limited herein.
In summary, according to the flow stabilizer 100 of the embodiment of the invention, the flow direction of the inert gas 300 introduced into the auxiliary furnace chamber 212 of the crystal pulling furnace 200 can be combed, so that the gas flow direction is more orderly, the turbulence intensity of the inert gas 300 in the auxiliary furnace chamber 212 can be reduced, the flow direction of the inert gas 300 is restricted, the swinging of the single crystal silicon rod caused by the gas flow is reduced, the stable contact of the single crystal silicon rod and the molten liquid level is facilitated, the occurrence probability of phenomena such as dislocation of the growth of the single crystal is reduced, the production efficiency of the single crystal silicon rod is improved, the impurity 400 in the main furnace chamber 211 can be reduced to be carried to the auxiliary furnace chamber 212 by turbulence, and the problems of pollution and erosion of the impurity 400 to the side walls of the crystal rod. Meanwhile, the distance between the first flow stabilizing cover 110 and the second flow stabilizing cover 120 can be adjusted to further adjust the flow rate of the airflow and ensure the stability of the airflow, the heights of the first flow stabilizing cover 110 and the second flow stabilizing cover 120 in the auxiliary furnace chamber 212 can be adjusted, the crystal bars with different lengths can be adapted to grow, and the use flexibility of the flow stabilizing device 100 is improved.
As shown in fig. 1 and 5, the crystal pulling furnace 200 according to the embodiment of the invention includes a furnace body 210, the furnace body 210 includes a main furnace chamber 211 and an auxiliary furnace chamber 212 communicated with the main furnace chamber 211, and the auxiliary furnace chamber 212 is provided with the flow stabilizer 100 according to the embodiment.
That is, the flow stabilizer 100 is arranged in the auxiliary furnace chamber 212 of the crystal pulling furnace 200, when in steady flow, the inert gas 300 flows in from the upper end of the auxiliary furnace chamber 212 and sequentially passes through the first flow stabilizing cover 110, the second flow stabilizing cover 120 and the guide cylinder 213 of the main furnace chamber 211, after the inert gas 300 passes through the first flow stabilizing cover 110 and the second flow stabilizing cover 120, the flow direction is changed, the gas flow is more orderly, after the redirected inert gas 300 enters the main furnace chamber 211, the flow of the gas flow flows stably and orderly, the phenomenon of gas flow disturbance of the inert gas 300 is reduced, when the gas flow flows to the surface of the single crystal silicon rod through the guide cylinder 213 of the main furnace chamber 211, the swing amplitude of the single crystal silicon rod due to the influence of the gas flow can be reduced, the stable contact of the single crystal silicon rod with the molten liquid level is facilitated, the occurrence probability of phenomena of single crystal growth dislocation and the like is reduced, the production efficiency of the single crystal silicon rod is improved, the impurity 400 in, the impurity 400 can be discharged from the main furnace chamber in time, and the problems of pollution and erosion of the impurity 400 to the side walls of the crystal bar and the thermal field component can be avoided.
Preferably, the flow stabilizer 100 further includes an interval adjusting mechanism 130 for adjusting a distance between the first flow stabilization cover 110 and the second flow stabilization cover 120 to expand a flow stabilization interval, one end of the first flow stabilization cover 110 and one end of the second flow stabilization cover 120 penetrate through a furnace body of the auxiliary furnace chamber 212, and one end of the first flow stabilization cover 110 and/or one end of the second flow stabilization cover 120 are connected with the interval adjusting mechanism 130.
That is, one end of the first flow stabilizing cover 110 and one end of the second flow stabilizing cover 120 may pass through the furnace wall of the auxiliary furnace chamber 212 and be connected to the distance adjusting mechanism 130, or one end of the first flow stabilizing cover 110 or one end of the second flow stabilizing cover 120 may pass through the furnace wall of the auxiliary furnace chamber 212 and be connected to the distance adjusting mechanism 130, so as to adjust the distance between the first flow stabilizing cover 110 and the second flow stabilizing cover 120 by the distance adjusting mechanism 130. Of course, in other embodiments of the present invention, one end of the distance adjustment mechanism 130 may pass through the wall of the secondary furnace chamber 212 and be connected to the first flow stabilization cap 110 and/or the second flow stabilization cap 120, which is not limited herein.
Preferably, the distance adjusting mechanism 130 includes a distance adjusting support 131 and a first driving mechanism 132, one end of the distance adjusting support 131 is connected with the first flow stabilizing cover 110 and the second flow stabilizing cover 120, or the distance adjusting support is connected with one end of the first flow stabilizing cover or one end of the second flow stabilizing cover, and the first driving mechanism 132 is connected with the distance adjusting support 131 and is used for driving the distance adjusting support 131 to approach to each other or depart from each other to adjust the distance between the first flow stabilizing cover 110 and the second flow stabilizing cover 120.
That is to say, the spacing adjusting bracket 131 can be arranged outside the auxiliary furnace chamber, one end of the first flow stabilizing cover 110 and/or one end of the second flow stabilizing cover 120 penetrate through the furnace wall of the auxiliary furnace chamber to be connected with the spacing adjusting bracket, the first driving mechanism 132 is connected with the spacing adjusting bracket 131, the first driving mechanism drives the spacing adjusting bracket to move so that the first flow stabilizing cover 110 and the second flow stabilizing cover 120 move up and down in the auxiliary furnace chamber 212, and further controls the spacing between the first flow stabilizing cover 110 and the second flow stabilizing cover 120, so as to better realize the control of the flow direction and the flow rate of the inert gas.
Since the structure and technical effects of the flow stabilizer 100 have been described in detail in the above embodiment, please refer to the flow stabilizer 100 in the above embodiment for other specific structures and effects of the flow stabilizer 100, which is not described herein again.
The crystal pulling furnace 200 can reduce the swing of the silicon single crystal rod caused by airflow, is beneficial to the stable contact of the silicon single crystal rod and the molten liquid level, reduces the probability of phenomena such as crystal growth dislocation and the like, improves the production efficiency of the silicon single crystal rod, can reduce the impurity 400 in the main furnace chamber 211 from being carried to the auxiliary furnace chamber 212 by random flow, and avoids the problems of pollution, erosion and the like of the impurity 400 to the side wall of the crystal rod and the thermal field component.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships are changed accordingly.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (12)
1. A flow stabilizer is applied to a crystal pulling furnace and is characterized by comprising:
the first flow stabilizing cover is provided with a plurality of first through holes and used for being installed in an auxiliary furnace chamber of the crystal pulling furnace so as to regulate the flow direction of inert gas introduced into the auxiliary furnace chamber of the crystal pulling furnace;
the second flow stabilizing cover is provided with a plurality of second through holes, is used for being installed in an auxiliary furnace chamber of the crystal pulling furnace, is opposite to the first flow stabilizing cover and is used for adjusting the flow direction of the inert gas adjusted by the first flow stabilizing cover;
further comprising: and the distance adjusting mechanism is used for adjusting the distance between the first flow stabilizing cover and the second flow stabilizing cover so as to enlarge a flow stabilizing interval.
2. The flow stabilizer of claim 1, wherein the first flow stabilizer shroud is formed as a funnel having a wide end at one end and a narrow end at the other end, the first flow stabilizer shroud being configured to rectify the inert gas introduced into the crystal puller, the inert gas flowing in from the wide end of the first flow stabilizer shroud and out from the narrow end;
the second flow stabilizing cover is in a funnel shape with a wide opening at one end and a narrow opening at the other end, the narrow opening end of the second flow stabilizing cover is opposite to the narrow opening end of the first flow stabilizing cover, and the second flow stabilizing cover is used for uniformly distributing the rectified inert gas.
3. The flow stabilizer of claim 1, wherein the spacing adjustment mechanism comprises:
the distance adjusting support is connected with the first flow stabilizing cover and the second flow stabilizing cover respectively, or the distance adjusting support is connected with the first flow stabilizing cover or the second flow stabilizing cover;
the first driving mechanism is connected with the interval adjusting support and used for driving the interval adjusting support to enable the interval adjusting support to drive the first flow stabilizing cover and the second flow stabilizing cover to approach or depart from each other.
4. The flow stabilizer of claim 3, wherein the first drive mechanism is connected with the spacing adjustment bracket through a transmission member, the transmission member comprising a transmission belt or a transmission chain.
5. A flow stabilizer according to claim 3, further comprising:
and the height adjusting mechanism is connected with the interval adjusting mechanism and is used for driving the interval adjusting mechanism to move so as to adjust the height of the first flow stabilizing cover and the second flow stabilizing cover in an auxiliary furnace chamber of the crystal pulling furnace.
6. The flow stabilizer of claim 1, wherein each of the first and second flow stabilization covers is a set, the flow stabilizer including a plurality of sets of first and second flow stabilization covers.
7. The flow stabilizer of claim 1, wherein the first and second flow stabilizers have an aperture ratio of 80% to 95%.
8. The flow stabilizer of claim 1, wherein the cross-section of the first through hole and the second through hole is circular, square, triangular, or a mixture thereof.
9. The flow stabilizer according to claim 8, wherein the cross section of the first through hole and the cross section of the second through hole are circular, and the aperture range of the first through hole and the aperture range of the second through hole are between 5 mm and 20 mm.
10. A crystal pulling furnace, comprising a furnace body, wherein the furnace body comprises a main furnace chamber and an auxiliary furnace chamber communicated with the main furnace chamber, and the auxiliary furnace chamber is provided with a flow stabilizing device according to any one of claims 1 to 9.
11. A crystal puller as set forth in claim 10 wherein the flow stabilizer includes a spacing adjustment mechanism for adjusting the distance between the first flow stabilizer cap and the second flow stabilizer cap to expand the flow stabilizer zone;
one ends of the first flow stabilizing cover and the second flow stabilizing cover penetrate through the furnace body of the auxiliary furnace chamber, and one end of the first flow stabilizing cover and/or one end of the second flow stabilizing cover are/is connected with the interval adjusting mechanism.
12. A crystal puller as set forth in claim 11 wherein the spacing adjustment mechanism includes:
the distance adjusting support is connected with one end of the first flow stabilizing cover and one end of the second flow stabilizing cover respectively, or the distance adjusting support is connected with one end of the first flow stabilizing cover or one end of the second flow stabilizing cover;
and the first driving mechanism is connected with the interval adjusting support and is used for driving the interval adjusting support to move so that the first flow stabilizing cover and the second flow stabilizing cover are arranged in the auxiliary furnace chamber to approach or depart from each other.
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| CN102011176B (en) * | 2010-11-30 | 2012-06-27 | 江苏华盛天龙光电设备股份有限公司 | Silicon single crystal growth furnace with gas cold traps |
| CN102312283B (en) * | 2011-07-04 | 2013-11-13 | 浙江晶盛机电股份有限公司 | Single crystal furnace having double auxiliary furnace chamber structure and production method for monocrystalline silicon |
| CN202968745U (en) * | 2012-12-26 | 2013-06-05 | 江苏华盛天龙光电设备股份有限公司 | Single crystal furnace structure with two lifting chambers |
| JP5942931B2 (en) * | 2013-06-27 | 2016-06-29 | 信越半導体株式会社 | Single crystal manufacturing apparatus and single crystal manufacturing method |
| CN104213185B (en) * | 2014-08-20 | 2017-01-25 | 浙江晶盛机电股份有限公司 | Argon branching device for monocrystalline silicon growing furnaces |
| CN104562185B (en) * | 2014-12-26 | 2017-05-10 | 华中科技大学 | Czochralski crystal growth furnace |
| CN104562184B (en) * | 2015-01-26 | 2017-03-29 | 麦斯克电子材料有限公司 | A kind of argon gas fills constant-current stabilizer |
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