CN110158149B - 一种太阳能电池原材料加工用单晶炉 - Google Patents
一种太阳能电池原材料加工用单晶炉 Download PDFInfo
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- CN110158149B CN110158149B CN201910565178.3A CN201910565178A CN110158149B CN 110158149 B CN110158149 B CN 110158149B CN 201910565178 A CN201910565178 A CN 201910565178A CN 110158149 B CN110158149 B CN 110158149B
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- single crystal
- seed
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- solar cell
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- 239000013078 crystal Substances 0.000 title claims abstract description 105
- 239000002994 raw material Substances 0.000 title claims abstract description 13
- 230000003014 reinforcing effect Effects 0.000 claims description 4
- 230000006978 adaptation Effects 0.000 claims description 2
- 239000013013 elastic material Substances 0.000 claims description 2
- 238000003913 materials processing Methods 0.000 claims 1
- 230000002829 reductive effect Effects 0.000 abstract description 8
- 238000004321 preservation Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- OFCNXPDARWKPPY-UHFFFAOYSA-N allopurinol Chemical compound OC1=NC=NC2=C1C=NN2 OFCNXPDARWKPPY-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
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CN201910565178.3A CN110158149B (zh) | 2019-06-27 | 2019-06-27 | 一种太阳能电池原材料加工用单晶炉 |
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CN201910565178.3A CN110158149B (zh) | 2019-06-27 | 2019-06-27 | 一种太阳能电池原材料加工用单晶炉 |
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CN110158149A CN110158149A (zh) | 2019-08-23 |
CN110158149B true CN110158149B (zh) | 2020-06-30 |
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CN201910565178.3A Active CN110158149B (zh) | 2019-06-27 | 2019-06-27 | 一种太阳能电池原材料加工用单晶炉 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113122911B (zh) * | 2021-03-29 | 2022-02-18 | 浙江晶阳机电股份有限公司 | 一种单晶炉热场加热装置及其加热方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2108619B1 (en) * | 2008-03-21 | 2011-06-22 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
CN102758249B (zh) * | 2012-08-13 | 2015-08-05 | 登封市蓝天石化光伏电力装备有限公司 | 一种无色刚玉单晶的制备方法 |
CN204022993U (zh) * | 2014-08-28 | 2014-12-17 | 无锡鼎晶光电科技有限公司 | 籽晶夹具 |
CN105805111B (zh) * | 2016-05-06 | 2020-03-31 | 周兆弟 | 上螺下锁自动化插杆可调式连接件 |
CN109371460B (zh) * | 2018-12-13 | 2023-10-20 | 中国电子科技集团公司第十三研究所 | 一种籽晶杆的可调式稳定装置 |
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Effective date of registration: 20200605 Address after: 010000 main building 3007-2, drawing review center, open street, ShaErQin Industrial Zone, Hohhot Economic and Technological Development Zone, Inner Mongolia Autonomous Region Applicant after: Inner Mongolia Heguang new energy Co.,Ltd. Address before: 510000 Room 301, No. 7, Helong Road, Helong Street, Baiyun District, Guangzhou City, Guangdong Province Applicant before: Chen Qijian |
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GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A single crystal furnace for processing solar cell raw materials Effective date of registration: 20230518 Granted publication date: 20200630 Pledgee: Industrial Bank Co.,Ltd. Hohhot Branch Pledgor: Inner Mongolia Heguang new energy Co.,Ltd. Registration number: Y2023150000074 |
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Address after: 010000 North Siyuan Middle Road West Ruyi Street South, Shaerqin Industrial Zone, Hohhot Economic and Technological Development Zone, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Heguang New Energy Co.,Ltd. Country or region after: China Address before: 010000 3007-2, main building, map review center, Kaifang street, ShaErQin Industrial Zone, Hohhot Economic and Technological Development Zone, Inner Mongolia Autonomous Region Patentee before: Inner Mongolia Heguang new energy Co.,Ltd. Country or region before: China |