CN110147171A - Liquid crystal writing film selective erase voltage generates and control method - Google Patents
Liquid crystal writing film selective erase voltage generates and control method Download PDFInfo
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- CN110147171A CN110147171A CN201810621598.4A CN201810621598A CN110147171A CN 110147171 A CN110147171 A CN 110147171A CN 201810621598 A CN201810621598 A CN 201810621598A CN 110147171 A CN110147171 A CN 110147171A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0414—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using force sensing means to determine a position
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
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- Theoretical Computer Science (AREA)
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Abstract
The invention discloses a kind of generation of liquid crystal writing film selective erase voltage and control methods, liquid crystal writing film is located between two conductive layers, first conductive layer and the second conductive layer are divided into two or more conduction regions respectively, apply A voltage to the conduction region of first conductive layer in covering selective erase region；B voltage is applied to the conduction region of second conductive layer in covering selective erase region；Alternatively, the first conductive layer is divided into two or more conduction regions, the second conductive layer is not divided, and applies A voltage to the conduction region of first conductive layer in covering selective erase region；B voltage is applied to the second conductive layer；The present invention can be realized the regional area erasing for written contents, and other regions are not influenced then by erasing, the deficiency all wiped can only be realized by overcoming traditional technology, improve the working efficiency and usage experience of user, improve the commercial value of liquid crystal writing film and its application apparatus.
Description
Technical field
The present invention relates to liquid crystal film technical field of structures, generate more particularly to a kind of liquid crystal writing film selective erase voltage
And control method.
Background technique
Liquid crystal writing film on the market at present, its working principle is that using the bistable characteristic of liquid crystal realize display and/or
Wipe the written contents on liquid crystal board.Such as using cholesteric liquid crystal as writing film, by acting on liquid crystal board
Pressure record the writing pressure trajectories of lettering pen, and then show corresponding written contents；Make cholesteric phase by applying electric field
Liquid crystal structure changes, and so that the writing pressure trajectories on liquid crystal board is disappeared to realize erasing.
The existing product using liquid crystal writing film is only capable of using the power on mode and realize entirely when carrying out handwriting erasing
The erasing of all person's handwritings in liquid crystal writing plate, when only needing erasing part writing such as user, then existing energization erasing mode can not
Meet needs, when especially modifying to the vicious part of writing, existing entirety erasing mode will will cause remaining not
The loss of modification information is needed, the mode that how to use the power on realizes that part wipes, becomes user's problem in the urgent need to address.
Writing film voltage control method disclosed in the prior art is only conductive layer and provides single voltage, leads using two
The electric field formed between electric layer realizes the whole erasing to region is write.This voltage control mode, which can not achieve, leads difference
Electric region applies voltage respectively, can not form the effective voltage control to different selective erase regions, can not achieve selective erase
Purpose.
Summary of the invention
The first object of the present invention is to disclose a kind of liquid crystal writing film selective erase voltage to generate and control method, the control
Method forms required electric field using the different voltages value for being applied to different conductive regions, in erasing region, to realize that part is wiped
It removes.
To achieve the goals above, the present invention adopts the following technical scheme:
Liquid crystal writing film selective erase voltage generates and control method, and liquid crystal writing film is located between two conductive layers, and two
A conductive layer is divided into two or more conduction regions respectively；It is characterized in that, its process are as follows:
A voltage is applied to the conduction region of first conductive layer in covering selective erase region；To covering selective erase region
The conduction region of second conductive layer applies B voltage；A voltage and B voltage are formed two conduction region space overlap positions wipes electric field,
Realize selective erase.
Further, the absolute value of A voltage and B voltage difference is greater than zero.
Further, the conduction region set except two conductive layers for covering the selective erase region respectively conduction region
Apply an offset voltage, forms the voltage difference between the conduction region set except selective erase region on two conductive layers
Electric field can not cause liquid crystal impression to disappear.
Further, the conduction region set except two conductive layers for covering the selective erase region respectively conduction region
Apply C voltage and meet following relationship between A voltage, B voltage and C voltage using B voltage as reference data value:
| A voltage-B voltage | > | A voltage-C voltage |
| A voltage-B voltage | > | C voltage-B voltage |；
Preferably,
| A voltage-B voltage |=| C voltage-B voltage | * 2.
Further, the conduction region set except two conductive layers for covering the selective erase region respectively conduction region
Apply two or more offset voltages, makes the electricity between the conduction region set except selective erase region on two conductive layers
The electric field that pressure difference is formed can not cause liquid crystal impression is macroscopic to shoal or disappear.
Further, the conduction region set except the conduction region on the first conductive layer for covering the selective erase region
Apply D voltage, the conduction region set except the conduction region on the second conductive layer for covering the selective erase region applies E electricity
Pressure；Using B voltage as reference data value, meet following relationship between A voltage, B voltage, D voltage and E voltage:
| A voltage-B voltage | > | D voltage-B voltage |
| A voltage-B voltage | > | A voltage-E voltage |
| A voltage-B voltage | > | D voltage-E voltage |；
Preferably,
| A voltage-B voltage |=| D voltage-B voltage | * 3
| E voltage-B voltage |=| D voltage-B voltage | * 2.
The second object of the present invention is to disclose a kind of to realize that above-mentioned liquid crystal writing film selective erase voltage generates and control
The multivoltage output circuit of method, comprising: main controller and booster circuit, wherein main controller generates control signal；Booster circuit root
Voltage needed for generating corresponding erasing impression according to the control signal that main controller generates, the booster circuit export two or two
Voltage needed for above erasing impression is formed relatively electric using voltage needed for above-mentioned two or more than two erasing impressions
Pressure difference constitutes erasing electric field, realizes impression erasing.
Further, the booster circuit includes one or more than one voltage generating unit, and the voltage generates
Unit includes one or more than one inductance boost circuit；The input terminal of each inductance boost circuit receives main controller
Signal is controlled, output end exports a required voltage；
Preferably, the inductance boost circuit is two, and the input terminal of each inductance boost circuit receives main controller
Signal is controlled, the output end superposition of two inductance boost circuits exports a required voltage signal.
Further, the voltage generating unit includes two inductance boost circuits, specific structure are as follows:
The tap of the collector connection inductance L2 of the base series resistor R2 of triode Q1, triode Q1, triode Q1's
Emitter ground connection；One end of inductance L2 connects power supply, and the other end connects the anode of diode D2, and the cathode of diode D2 is successively gone here and there
It is grounded after connection resistance R1 and resistance R4；Polar capacitor E1 and capacitor C2 is connected in parallel on the series arm of resistance R1 and resistance R4 respectively
The anode at both ends, polar capacitor E1 is connect with the cathode of diode D2, other end ground connection；One end of capacitor C2 is with diode D2's
Cathode connection, other end ground connection；
The cathode of diode D2 is connect with the cathode of diode D1, one end of the anode connection inductance L1 of diode D1, electricity
The other end for feeling L1 connects power supply；The pumping of the collector connection inductance L1 of the base series resistor R3 of triode Q2, triode Q2
Head, the emitter ground connection of triode Q2.
The present invention generates the voltage value of one or more than one setting by control booster circuit, in local erasable area
Domain forms erasing electric field, realizes selective erase.
Two-way voltage is overlapped the office finally needed after complementation in such a way that at least two-way boosts by the present invention
Portion's erasing voltage is able to solve the unstable problem of output voltage caused by single channel boosting.
Further, the output end voltage of the voltage generating unit is input to main controller, main controller root after partial pressure
The output for adjusting control signal in real time according to the voltage received stablizes the output end voltage of voltage generating unit.
Master controller is fed back to after output end voltage is divided, master controller adjusts control letter according to the voltage of feedback in real time
Number output, to guarantee output end voltage all-the-time stable voltage needed for wiping impression.
Further, the control signal of the main controller output is pwm signal, by controlling the frequency of pwm signal and accounting for
Empty ratio realizes the control to output voltage amplitude.
The third object of the present invention is to disclose a kind of generate using above-mentioned liquid crystal writing film selective erase voltage and control
The writing film of method, comprising: by one of them of the first conductive layer of writing film or the second conductive layer be divided into two or two with
The strip-shaped conductive region of upper mutually insulated；
The part that the conductive region, exhausted liquid crystal layer and undivided conductive layer are overlapped jointly is erasable region.
The present invention changes the status that can only integrally wipe, and by the segmentation to conductive layer, writing film is divided into several
The erasable region in part applies voltage by control and is respectively formed different electric fields on the erasable region in above-mentioned part, can
Realize selective erase.
In view of processing cost and the complexity of technique, conductive layer is divided into strip-shaped conductive region, had by the present invention
Conducive to processing efficiency is improved, process costs are reduced, convenient for batch production.
The fourth object of the present invention be disclose another generated using above-mentioned liquid crystal writing film selective erase voltage and
The writing film of control method, comprising: the first conductive layer of writing film and the second conductive layer are divided into two or two respectively
The conductive region of the above mutually insulated；
Each conductive region of first conductive layer is distributed along first direction, is parallel to each other；Second conductive layer it is each
Conductive region is distributed in a second direction, is parallel to each other, and first direction and second direction are spatially interlaced；Described first leads
Wiping is collectively formed in lap of the conductive region of electric layer and the second conductive layer in space liquid crystal layer region corresponding with the part
Except region；
Preferably, the first direction is vertical with second direction.
Upper layer and lower layer conductive layer is split respectively, can be applied in the different conductive regions of upper and lower two conductive layer in this way
Add different voltage, electric field controls mode is more flexible, while improving the accuracy of selective erase.
The partitioning scheme that the present invention provides can make cut zone convenient for industrial mass processing according to actual needs
Miniaturization realizes more accurate selective erase by the energization to different conductive strips.
The fifth object of the present invention is to disclose a kind of board, comprising: using above-mentioned liquid crystal writing film selective erase electricity
Pressure generates and the writing film of control method；
Further,
The board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
Further, the board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character of storage or
Test pattern is sent to external equipment.
The sixth object of the present invention is to disclose a kind of blackboard, comprising: uses above-mentioned liquid crystal writing film selective erase voltage
The writing film of generation and control method；
Further,
The blackboard further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
It is further, described black further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character of storage or
Test pattern is sent to external equipment.
The seventh object of the present invention is to disclose a kind of drawing board, comprising: uses above-mentioned liquid crystal writing film selective erase voltage
The writing film of generation and control method；
Further,
The drawing board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
Further, the drawing board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character of storage or
Test pattern is sent to external equipment.
Compared with prior art, the beneficial effects of the present invention are:
The present invention is by applying different voltage in different conductive regions, so that being respectively formed difference in each erasing region
Electric field, by applied alive control, realizing the complete erasing to pre- erasing region, and remaining erasing region then cannot
It is completely erased, the purpose of selective erase is realized with this.
Two-way voltage is overlapped the part finally needed after complementation and is wiped by the present invention by the way of two-way boosting
Except voltage, the unstable deficiency of output voltage can make up for it.
Liquid crystal writing film is divided into several erasing regions by the present invention, is controlled by multivoltage output circuit to liquid crystal writing
Each erasing region of film applies the voltage of setting, can be realized and the regional area of written contents is wiped, and other regions
Do not influenced by erasing then, the deficiency all wiped can only be realized by overcoming traditional technology, improve user working efficiency and
Usage experience improves the commercial value of liquid crystal writing film and its application apparatus.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.
Fig. 1 is that each conduction region first half application voltage of writing film realizes erasing schematic diagram in the embodiment of the present invention one；
Fig. 2 is that the voltage that each conduction region second half court of writing film applies in the embodiment of the present invention one realizes erasing schematic diagram；
Fig. 3 is specifically to wipe example in the embodiment of the present invention one；
Fig. 4 is the erasing effect diagram in Fig. 3；
Fig. 5 is that each conduction region first half application voltage of writing film realizes erasing schematic diagram in the embodiment of the present invention two；
Fig. 6 is that the voltage that each conduction region second half court of writing film applies in the embodiment of the present invention two realizes erasing schematic diagram；
Fig. 7 is the erasing effect diagram of the embodiment of the present invention two；
Fig. 8 (a) is four single channel inductance boost electrical block diagram of the embodiment of the present invention；
Fig. 8 (b) is four single channel inductance boost schematic illustration of the embodiment of the present invention；
Fig. 9 (a) is four two-way inductance boost electrical block diagram of the embodiment of the present invention；
Fig. 9 (b) is four two-way inductance boost schematic illustration of the embodiment of the present invention；
Figure 10 is four main controller schematic diagram of the embodiment of the present invention；
Figure 11 is the writing membrane structure diagram of the embodiment of the present invention five；
Figure 12 is the writing membrane structure diagram of the embodiment of the present invention six.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
Embodiment one
The embodiment of the invention discloses a kind of generation of liquid crystal writing film selective erase voltage and control methods, wherein liquid crystal
Writing film is located between two conductive layers, and two conductive layers are divided into two or more conduction regions respectively；
A voltage is applied to the conduction region of first conductive layer in covering selective erase region；To covering selective erase region
The conduction region of second conductive layer applies B voltage；A voltage and B voltage are formed two conduction region space overlap positions wipes electric field,
Realize selective erase.
The conduction region set except two conductive layers for covering selective erase region respectively conduction region applies C voltage,
In, the conduction region of setting can be all leading in addition to two respective conduction regions of conductive layer in covering selective erase region
Electric area is also possible to the conduction region adjoining with the conduction region in covering selective erase region selected as needed.
Using B voltage as reference data value, meet following relationship between A voltage, B voltage and C voltage:
| A voltage-B voltage | > | A voltage-C voltage |
| A voltage-B voltage | > | C voltage-B voltage |；
Preferably,
| A voltage-B voltage |=| C voltage-B voltage | * 2.
In the embodiment of the present invention, setting A voltage to wipe high pressure Vh, B voltage is no-voltage, and C voltage is boost voltage Va；
The erasing high pressure Vh is voltage required for referring to completely wipe written handwriting.
In this way, being formed by electric field satisfaction on entire liquid crystal writing film: the electric field in region to be wiped is erasing high pressure Vh；
The electric field in the erasing region in ten word directions centered on region to be wiped is boost voltage Va, the electric field in remaining erasing region
It is zero.
The relationship for needing to meet between erasing high pressure Vh and boost voltage Va is as follows:
| Vh | > | Vh-Va |
| Vh | > | Va |；
As a preferred embodiment, we set:
| Vh |=| Va | * 2.
It should be noted that being interchangeable to the voltage applied on two conductive layers every the time of setting, make entire
It is identical but contrary that it is formed by electric field level on liquid crystal writing film, can be avoided in this way and liquid crystal writing film is applied for a long time
Add the generation of liquid crystal polarization phenomenon caused by the electric field in the same direction.Hereinafter, we are by different two of direction of an electric field
Period is referred to as first half and second half court.
To each conduction region of writing film apply voltage as shown in Fig. 1 or Fig. 2.Wherein, Fig. 1 is before each conduction region of writing film
The voltage that half-court applies, Fig. 2 are the voltage that each conduction region second half court of writing film applies；First half and second half court service voltage it is suitable
Sequence can be interchanged.
As shown in Figure 1, only electric field is that the region of 2Va is completely erased at this time, and the region that electric field is 0 is not wiped free of；Electricity
Field is that the region Va is not completely erased, but due to equally existing electric field, writing film molecule under the action of applying electric field is arranged
Certain variation can occur for column mode, because not reaching complete erasing voltage, molecule can not become completely from planar structure
For burnt wimble structure, but certain influence can be generated to display effect, visually from the point of view of, the writing of this partial region shoals
, and this is existing for selective erase is not intended to.
As shown in Figure 2, the electric field formed on writing film is reversed, and only electric field is that the region of -2Va is completely erased, electricity
It not being wiped free of for 0 region, electric field is that the region-Va is not completely erased, but the problem of there is also described in Fig. 1.
Fig. 3 and Fig. 4 gives specific example and illustrates the generation of writing film selective erase voltage and control method of the invention.
In Fig. 3, if it is desired to only wipe " in " word, then it needs to apply erasing high pressure 2Va to conductive region corresponding to h in first half, to c
Corresponding conductive region applies no-voltage, remaining conductive region applies boost voltage Va, in this way, " in " erasing where word
The electric field that region is formed is 2Va, has reached the condition of complete erasing, can be realized complete erasing；And " up and down " four words
Writing can be corresponding thin out, influence visual effect, as shown in Figure 4.Second half court is also the same reason.
Embodiment two
The embodiment of the invention discloses the generation of another liquid crystal writing film selective erase voltage and control methods, overcome
Deficiency present in control method in embodiment two, specifically includes:
Liquid crystal writing film is located between two conductive layers, and two conductive layers are divided into two or more lead respectively
Electric area；
A voltage is applied to the conduction region of first conductive layer in covering selective erase region；To covering selective erase region
The conduction region of second conductive layer applies B voltage；A voltage and B voltage are formed two conduction region space overlap positions wipes electric field,
Realize selective erase.
The conduction region set except the conduction region on the first conductive layer for covering the selective erase region applies D electricity
Pressure, the conduction region set except the conduction region on the second conductive layer for covering the selective erase region apply E voltage；Its
In, the conduction region of setting can be all leading in addition to two respective conduction regions of conductive layer in covering selective erase region
Electric area is also possible to the conduction region adjoining with the conduction region in covering selective erase region selected as needed.
Using B voltage as reference data value, meet following relationship between A voltage, B voltage, D voltage and E voltage:
| A voltage-B voltage | > | D voltage-B voltage |
| A voltage-B voltage | > | A voltage-E voltage |
| A voltage-B voltage | > | D voltage-E voltage |
Preferably,
| A voltage-B voltage |=| D voltage-B voltage | * 3
| E voltage-B voltage |=| D voltage-B voltage | * 2
In the embodiment of the present invention, setting A voltage to wipe high pressure Vh, B voltage is no-voltage, and D voltage is the second auxiliary electricity
Va2 is pressed, the 5th voltage is the first boost voltage Va1；The erasing high pressure is needed for referring to completely wipe written handwriting
The voltage wanted.
In this way, being formed by electric field satisfaction on entire writing film: the voltage difference in region to be erased is erasing high pressure, remaining
The voltage difference for wiping region is the second boost voltage Va2.
The relationship for needing to meet between erasing high pressure Vh and boost voltage Va1, Va2 is as follows:
| Vh | > | Va2 |
| Vh | > | Vh-Va1 |
| Vh | > | Va2-Va1 |；
As a preferred embodiment, we set:
| Vh |=| Va2 | * 3；
| Va1 |=| Va2 | * 2；
To each conduction region of writing film apply voltage as shown in Fig. 5 or Fig. 6, wherein Fig. 5 be each conduction region of writing film before
The voltage that half-court applies, Fig. 6 are the voltage that each conduction region second half court of writing film applies；First half and second half court service voltage sequence
It can be interchanged.The meaning of first half and second half court is identical with embodiment one in the present embodiment.
As shown in Figure 5, only electric field is that the region of 3Va2 is completely erased at this time, and electric field is that the region of Va2 is not wiped free of,
Although electric field is that the liquid crystal membrane molecule in the region of Va2 also will receive the influence of electric field, since electric field is identical, the change of molecule
Law is also identical, and therefore, this influence is consistent, and not will cause visual display difference, it is therefore contemplated that electric field
It is not wiped free of for the region of Va2.The complete erasing of pre- erasing regional area is thereby realized, and is wiped except regional area in advance
Region person's handwriting do not influenced by erasing.
It will be appreciated from fig. 6 that the electric field formed on liquid crystal writing film is reversed, only electric field is that the region of -3Va2 is completely erased,
Electric field is that the region of-Va2 is not wiped free of.
Equally by taking Fig. 3 as an example, if it is desired to only wipe " in " word, then:
For the first conductive layer, need to apply erasing high pressure 3Va2, f, g, i to conductive region corresponding to h in first half
Apply the second boost voltage Va2 with conductive region corresponding to j；No-voltage is applied to conductive region corresponding to h in second half court,
F, conductive region corresponding to g, i and j applies the first boost voltage 2Va2；
For the second conductive layer, need to apply no-voltage to conductive region corresponding to c in first half, a, b, d, e institute are right
The conductive region answered applies the first boost voltage 2Va2；Additional high pressure 3Va2 is applied to conductive region corresponding to c in second half court,
A, conductive region corresponding to b, d, e applies the second boost voltage Va2；
In this way, whether first half or second half court, the staggered region of the conductive region corresponding to h and c, i.e., " in " word
The electric field in the region at place is 3Va2, has reached erasing voltage, has been completely erased；And the electric field in remaining region is identical, is
Va2 visually sees that writing is almost unchanged, as shown in Figure 7.Realize only erasing " in " word, and remaining region be wiped free of
Purpose.
Similarly, in Fig. 3, if it is desired to only two words of erasing " under ", then first half needs to apply voltage to be respectively as follows: h institute right
The conductive region answered is 3Va2；Conductive region corresponding to c and d is 0；A, conductive region corresponding to b and e is 2Va2；f,g,i
It is Va2 with conductive region corresponding to j；
It is 0 that second half court, which needs to apply voltage to be respectively as follows: conductive region corresponding to h,；Conductive region corresponding to c and d is
3Va2；A, conductive region corresponding to b and e is Va2；F, conductive region corresponding to g, i and j is 2Va2.
In this way, whether first half or second half court, " under " two words can be completely erased, and remaining writing is in vision
It is upper unaffected.
If it is desired to only wiping " 2 on 1 " three words, then first half, which needs to apply voltage and is respectively as follows: corresponding to g, h and i, leads
Electric region is 3Va2；Conductive region corresponding to b is 0；A, conductive region corresponding to c, d and e is 2Va2；F, corresponding to j
Conductive region is Va2；
It is 0 that second half court, which needs to apply voltage to be respectively as follows: corresponding conductive region,；Conductive region corresponding to b is 3Va2；
A, conductive region corresponding to c, d and e is Va2；F, the conductive region corresponding to j is 2Va2.
It can be realized " 2 on 1 " three words in this way to be completely erased, and remaining writing is visually unaffected.
Embodiment three
The embodiment of the invention discloses a kind of generation of liquid crystal writing film selective erase voltage and control methods, wherein liquid crystal
Writing film is located between two conductive layers, and the first conductive layer is divided into two or more conduction regions；
A voltage is applied to the conduction region of first conductive layer in covering selective erase region；B electricity is applied to the second conductive layer
Pressure；A voltage and B voltage are formed in the conduction region of first conductive layer and the second conductive layer space overlap position wipes electricity
, realize selective erase.
Under such mode, shape is distinguished in the overlapped part of each conductive region and the second conductive layer of the first conductive layer
At selective erase region.
It can according to need and the first conductive layer is divided into the identical conductive region of two sizes of up and down or left and right, this
Sample, by one of conductive region apply erasing high pressure Vh, the erasing high pressure be refer to written handwriting is complete
Voltage required for wiping, applies no-voltage to another conductive region and the second conductive layer, in this way, in entire liquid crystal respectively
Electric field satisfaction is formed by writing film: the part that the conductive region of application erasing high pressure is overlapped with the second conductive layer is formed
Selective erase region electric field be Vh；The electric field in remaining erasing region is zero.It can be realized to the conduction for applying erasing high pressure
The complete erasing in region, i.e. the half region of erasing writing plate.
Alternatively, the first conductive layer is divided into the identical conductive region of four sizes, by one of conductive region
Apply erasing high pressure Vh, no-voltage is applied respectively to another conductive region and the second conductive layer, in this way, in entire liquid crystal book
Write and be formed by electric field satisfaction on film: the overlapped part of the conductive region and the second conductive layer of application erasing high pressure is formed
The electric field in selective erase region is Vh；The electric field in remaining erasing region is zero.It can be realized to the conduction region for applying erasing high pressure
The complete erasing in domain, i.e. 1/4 region of erasing writing plate.
Alternatively, the first conductive layer is divided into any form of conductive region, to realize to different zones handwriting
Erasing.
Example IV
Writing described in embodiment one or embodiment two or embodiment three is realized the embodiment of the invention discloses a kind of
Film selective erase voltage generates and the multivoltage output circuit of control method, comprising: main controller and booster circuit interconnected.
Main controller is main control MCU, for generating control signal and exporting to booster circuit.
Booster circuit includes one or more than one voltage generating unit, each voltage generating unit can root
Voltage all the way is generated according to the control signal of main controller.
Main controller is to each voltage generating unit output pwm signal, by the phase difference and duty that control pwm signal
Than controlling voltage value caused by voltage generating unit.
Each voltage generating unit includes one or more than one inductance boost circuit；Each inductance boost electricity
The input terminal on road receives the pwm signal of main controller output, and output end exports a required voltage.
Voltage generating unit of the invention can be realized by inductance boost circuit all the way and be boosted that inductance boost circuit is former all the way
Reason figure is as shown in Fig. 8 (a), by controlling the phase difference and duty ratio of PWM11, the voltage magnitude of control output end Vout output；
When using inductance boost circuit all the way, shown in control waveform principle isoboles such as Fig. 8 (b), as seen from the figure, output end Vout voltage
The fluctuation of amplitude is larger, is unfavorable for voltage stabilization.
Voltage generating unit of the invention can also realize boosting by two-way or the above inductance boost circuit of two-way, each
The output voltage of road inductance boost circuit is superimposed as a voltage value output, is conducive to the stabilization of voltage in this way, avoids output
The occurrence of voltage undulation.
As preferred embodiment, when voltage generating unit of the present invention uses the form of two-way inductance boost circuit, tool
Shown in body structure such as Fig. 9 (a), comprising: the collector connection inductance L2's of the base series resistor R2 of triode Q1, triode Q1
Centre tap, the emitter ground connection of triode Q1；One end of inductance L2 connects input power, and the other end is connecting diode D2 just
Pole, the cathode of diode D2 are grounded after being sequentially connected in series resistance R1 and resistance R4；Polar capacitor E1 and capacitor C2 are connected in parallel on electricity respectively
The both ends of the series arm of R1 and resistance R4 are hindered, the anode of polar capacitor E1 is connect with the cathode of diode D2, other end ground connection；
One end of capacitor C2 is connect with the cathode of diode D2, other end ground connection；
The cathode of diode D2 is also connect with the cathode of diode D1, one end of the anode connection inductance L1 of diode D1,
The other end of inductance L1 connects input power；The collector of the base series resistor R3 of triode Q2, triode Q2 connect inductance
The centre tap of L1, the emitter ground connection of triode Q2.
In Fig. 9 (a), voltage generating unit is made of two-way inductance boost circuit, is inductance L1, diode D1, electricity respectively
Hinder R3, triode Q2 composition all the way, inductance L2, diode D2, resistance R2, triode Q1 form another way；Two-way inductance boost
The input signal of circuit is respectively to come the PWM1-1 and PWM1-2 of master, the output signal superposition of two-way inductance boost circuit
Corresponding voltage is exported in output end vo ut afterwards.It is each to control by adjusting the duty ratio and phase difference of each pwm signal
The amplitude and phase of road inductance boost circuit output voltage, to guarantee the voltage of two-way inductance boost circuit output by superposition
Required burning voltage can be obtained afterwards.
If be used only wherein all the way inductance boost circuit when, the fluctuation for exporting the voltage value of Vout is larger, is unfavorable for electricity
Pressure is stablized；And after increasing another way boost network circuit, by adjusting the PWM1-1 and PWM1-2 of two-way boost network circuit
Phase difference and duty ratio distribution condition make the voltage stabilization of final output in setting value, control waveform principle isoboles such as Fig. 9
(b) shown in, two-way voltage is respectively formed by PWM1-1 and PWM1-2, the two-way voltage of output has fluctuation, but two-way is electric
After pressure carries out amplitude superposition, it is capable of forming a stable voltage value, the bold portion being such as finally superimposed.
Voltage required for obtaining after superposition is simultaneously output to Vout, and E1, C2 are filter capacitor, resistance R1 and R4 composition
The resistor voltage divider network of output voltage values detection, output voltage is after resistance R1 and R4 partial pressure, after output end adc1 will be divided
Voltage Feedback to master controller, master controller adjusts accounting for for PWM1-1 and PWM1-2 according to the feedback voltage received in real time
Sky ratio and phase difference, to achieve the purpose that voltage value needed for capable of stablizing output.
The embodiment of the present invention includes three road voltage generating units with booster circuit, per voltage generating unit all the way by two-way electricity
Sense booster circuit is illustrated for being boosted, and the structure of three road voltage generating units is identical with working principle；The present embodiment
In, the model SM59R16A5C of main control chip, as shown in Figure 10, what those skilled in the art can be known can be realized this hair
Other main control chips of bright function are also within protection scope of the present invention.
Main control chip the 18th, 19,20,23,24,25 pins connect respectively with three road voltage generating units, for produce 6
Road pwm signal, control generate the voltage that three tunnel sizes can arbitrarily change, and voltage swing is determined by the frequency and duty ratio of pwm signal
It is fixed；Main control chip the 40th, 41,42 pins respectively with the output voltage values of three road voltage generating units detection voltage-splitter resistance net
Network connection, for the output voltage values of three road inductance boost circuit of real-time detection, adjusts PWM's to feed back to main control chip in real time
Signal output, so that the output specific voltage value in three tunnels can be stablized by reaching.For example, booster circuit includes that 3 voltages generate list
Member receives two-way pwm signal per voltage generating unit all the way respectively, in this way, booster circuit can generate the voltage of three settings,
This 3 voltages are respectively applied to the different conductive regions of two conductive layers of writing film, so that needed for erasing region is formed in advance
Erasing electric field, realize selective erase.
Embodiment five
The embodiment of the present invention on the basis of example 1, discloses a kind of using the generation of selective erase voltage and controlling party
The writing film of method, as shown in figure 11, comprising: the first conductive layer, liquid crystal layer and the second conductive layer successively arranged from top to bottom；Its
In, the first conductive layer line that is etched is divided into three strip-shaped conductive regions being parallel to each other, and the second conductive layer is not divided；First leads
The overlapped part of conductive region and the second conductive layer in electric layer forms the first erasing region, the second erasing region and third
Wipe region.
For on the first conductive layer each conductive region and the second conductive layer apply voltage respectively, in this way in the first scratching area
Domain, the second erasing region and third erasing region can be respectively formed electric field, utilize the difference formed in each erasing region
Electric field realize selective erase.
The division for only carrying out conductive region in the present embodiment on a wherein conductive layer, is formed by selective erase region
Area is determined by conductive region, it is generally the case that selective erase area is larger, is suitable for large area selective erase equipment.
Embodiment six
The embodiment of the present invention on the basis of example 2, discloses another and is generated and controlled using selective erase voltage
The writing film of method processed, as shown in figure 12, comprising: the first conductive layer, liquid crystal layer and the second conduction successively arranged from top to bottom
Layer；
Wherein, the first conductive layer is divided into the transverse conductance region of two or more mutually insulateds, and second is led
Electric layer is divided into longitudinal conductive region of two or more mutually insulateds, and each conductive region is equidistant；The
Conductive region on one conductive layer is spatially mutually perpendicular to interlock with the conductive region on the second conductive layer.By to conductive layer
Division, writing film is divided into reticular structure, each grid be one individually erasing region.
Apply voltage respectively for each conductive region on the first conductive layer and the second conductive layer, in this way in each erasing region energy
It is enough respectively formed electric field, using the different electric fields formed in each erasing region, realizes selective erase.
As an implementation, the first conductive layer is divided into two lateral conductive regions, the second conductive layer is drawn
It is divided into two longitudinal conductive regions, the spatially overlapped part of two conductive layers forms four erasing regions, uses
Selective erase voltage in embodiment one or embodiment two generates and control method, is on the first conductive layer and the second conductive layer
Each conductive region apply voltage respectively, be respectively formed electric field in four erasing regions, can be realized to any one wipe region
Erasing.
Carry out the division of conductive region, the face in the selective erase region of formation in the present embodiment respectively to upper and lower two conductive layer
Product determined by the interlaced area of conductive region spatially in about two two conductive layers, it is generally the case that selective erase area compared with
Small, erasing precision is high, especially suitable for the selective erase equipment compared with small area.
Embodiment seven
The embodiment of the present invention is in embodiment one or embodiment two or embodiment three or example IV or embodiment
Five or embodiment six on the basis of, disclose using selective erase voltage generate and control method liquid crystal writing film it is specific
Application product, such as:
Liquid crystal writing film of the invention using the generation of selective erase voltage and control method is applied on board, it is real
The selective erase function of existing board.
Further, the existing liquid crystal board remembered, for example, being incuded when writing by resistance type touch control screen
Pressure calculates pressure position, feeds back simultaneously pen trace track, realizes the storage of handwriting trace；Alternatively, converting handwriting trace to
Standard character or test pattern are stored.
Liquid crystal writing film of the invention using the generation of selective erase voltage and control method is remembered applied to above-mentioned
Liquid crystal board, realize the function of selective erase.
Further, communication unit is set on the above-mentioned board that there is selective erase function simultaneously with memory function
Member is communicated by way of wired or wireless communication with external equipment.
External equipment can be the mobile terminals such as mobile phone, PAD, and being also possible to PC machine or those skilled in the art can think
The other equipment terminal arrived.
Similarly, the liquid crystal writing film of the invention using the generation of selective erase voltage and control method can also be applied to
Other blackboards that can be remembered are perhaps on drawing board and can be by the handwriting trace information or standard character or test pattern of storage
External equipment is sent to by communication unit.
Alternatively embodiment, by it is of the invention using selective erase voltage generate and control method liquid crystal book
It writes film and is applied to luminous energy board, luminous energy liquid crystal handwriting pad, the big liquid crystal writing blackboard of luminous energy, luminous energy dust-free writing board, luminous energy just
Take blackboard, electronic drawing board, lcd electronic writing plate, electronic handwritten plate, electronic recording notebook, drawing pad, children's handwriting pad, youngster
Child's scribble drawing board, erasing rubber function sketching board, liquid crystal electron drawing boards or color liquid crystal handwriting pad or those skilled in the art
In other Related products that member can be known, to realize the selective erase function of the said goods.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (17)
1. liquid crystal writing film selective erase voltage generates and control method, liquid crystal writing film is located between two conductive layers, two
Conductive layer is divided into two or more conduction regions respectively；It is characterized in that, its process are as follows:
A voltage is applied to the conduction region of first conductive layer in covering selective erase region；To the second of covering selective erase region
The conduction region of conductive layer applies B voltage；A voltage and B voltage are formed two conduction region space overlap positions wipes electric field, realizes
Selective erase.
2. liquid crystal writing film selective erase voltage as described in claim 1 generates and control method, which is characterized in that A voltage
It is greater than zero with the absolute value of B voltage difference.
3. liquid crystal writing film selective erase voltage as described in claim 1 generates and control method, which is characterized in that covering
The conduction region that two conductive layers in the selective erase region are respectively set except conduction region applies an offset voltage, makes two
The electric field that voltage difference between the conduction region set except selective erase region on conductive layer is formed can not lead to liquid crystal impression
It disappears.
4. liquid crystal writing film selective erase voltage as claimed in claim 3 generates and control method, which is characterized in that covering
The conduction region that two conductive layers in the selective erase region are respectively set except conduction region applies C voltage, is reference with B voltage
A reference value meets following relationship between A voltage, B voltage and C voltage:
| A voltage-B voltage | > | A voltage-C voltage |
| A voltage-B voltage | > | C voltage-B voltage |；
Preferably,
| A voltage-B voltage |=| C voltage-B voltage | * 2.
5. liquid crystal writing film selective erase voltage as described in claim 1 generates and control method, which is characterized in that covering
The conduction region that two conductive layers in the selective erase region are respectively set except conduction region applies two or more compensation
Voltage, the electric field for forming the voltage difference between the conduction region set except selective erase region on two conductive layers can not be led
Cause that liquid crystal impression is macroscopic shoals or disappear.
6. liquid crystal writing film selective erase voltage as claimed in claim 5 generates and control method, which is characterized in that covering
The conduction region set except conduction region on first conductive layer in the selective erase region applies D voltage, is covering the office
The conduction region set except conduction region on second conductive layer in portion erasing region applies E voltage；Using B voltage as reference data
Value, meets following relationship between A voltage, B voltage, D voltage and E voltage:
| A voltage-B voltage | > | D voltage-B voltage |
| A voltage-B voltage | > | A voltage-E voltage |
| A voltage-B voltage | > | D voltage-E voltage |
Preferably,
| A voltage-B voltage |=| D voltage-B voltage | * 3
| E voltage-B voltage |=| D voltage-B voltage | * 2.
7. liquid crystal writing film selective erase voltage generates and control method, liquid crystal writing film is located between two conductive layers, first
Conductive layer is divided into two or more conduction regions；It is characterized in that, its process are as follows:
A voltage is applied to the conduction region of first conductive layer in covering selective erase region；B voltage is applied to the second conductive layer；A electricity
Pressure forms erasing electric field in the conduction region of first conductive layer and the second conductive layer space overlap position with B voltage, realizes
Selective erase.
8. it is a kind of realize the described in any item liquid crystal writing film selective erase voltages of claim 1-7 generate and control method it is more
Voltage follower circuit characterized by comprising main controller and booster circuit, wherein main controller generates control signal；Boosting electricity
Voltage needed for the control signal that road is generated according to main controller generates corresponding erasing impression, which is characterized in that the boosting electricity
Voltage needed for road exports two or more erasing impressions, using needed for above-mentioned two or more than two erasing impressions
The relative voltage difference that voltage is formed constitutes erasing electric field, realizes impression erasing.
9. multivoltage output circuit as claimed in claim 8, which is characterized in that the booster circuit includes one or one
Above voltage generating unit, the voltage generating unit include one or more than one inductance boost circuit；Each
The input terminal of inductance boost circuit receives the control signal of main controller, and output end exports a required voltage；
Preferably, the inductance boost circuit is two, and the input terminal of each inductance boost circuit receives the control of main controller
Signal, the output end superposition of two inductance boost circuits, exports a required voltage signal.
10. multivoltage output circuit as claimed in claim 8, which is characterized in that the voltage generating unit includes two electricity
Feel booster circuit, specific structure are as follows:
The tap of the collector connection inductance L2 of the base series resistor R2 of triode Q1, triode Q1, the transmitting of triode Q1
Pole ground connection；One end of inductance L2 connects power supply, and the other end connects the anode of diode D2, and the cathode of diode D2 is sequentially connected in series electricity
It is grounded after resistance R1 and resistance R4；Polar capacitor E1 and capacitor C2 is connected in parallel on the two of the series arm of resistance R1 and resistance R4 respectively
The anode at end, polar capacitor E1 is connect with the cathode of diode D2, other end ground connection；One end of capacitor C2 and bearing for diode D2
Pole connection, other end ground connection；
The cathode of diode D2 is connect with the cathode of diode D1, one end of the anode connection inductance L1 of diode D1, inductance L1
The other end connect power supply；The tap of the collector connection inductance L1 of the base series resistor R3 of triode Q2, triode Q2, three
The emitter of pole pipe Q2 is grounded.
11. multivoltage output circuit as claimed in claim 8, which is characterized in that the output end electricity of the voltage generating unit
Pressure is input to main controller after partial pressure, and main controller adjusts the output of control signal in real time according to the voltage received, makes voltage
The output end voltage for generating unit is stablized.
12. the multivoltage output circuit as described in claim 9-11, which is characterized in that the control signal of the main controller output
For pwm signal.
It is generated using the described in any item liquid crystal writing film selective erase voltages of claim 1-7 and control method 13. a kind of
Writing film characterized by comprising one of them of the first conductive layer of writing film or the second conductive layer are divided into two or two
The strip-shaped conductive region of a above mutually insulated；
The part that the conductive region, exhausted liquid crystal layer and undivided conductive layer are overlapped jointly is erasable region.
It is generated using the described in any item liquid crystal writing film selective erase voltages of claim 1-7 and control method 14. a kind of
Writing film characterized by comprising the first conductive layer of writing film and the second conductive layer are divided into two or two respectively
The conductive region of the above mutually insulated；
Each conductive region of first conductive layer is distributed along first direction, is parallel to each other；Each conduction of second conductive layer
Region is distributed in a second direction, is parallel to each other, and first direction and second direction are spatially interlaced；First conductive layer
Lap liquid crystal layer region corresponding with the part with the conductive region of the second conductive layer in space is collectively formed erasable
Region；
Preferably, the first direction is vertical with second direction.
15. a kind of board, which is characterized in that including using liquid crystal writing film selective erase described in claim 13 or 14
Voltage generates and the writing film of control method,
Further,
The board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Further, the board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character or standard of storage
Figure is sent to external equipment.
16. a kind of blackboard, which is characterized in that including electric using liquid crystal writing film selective erase described in claim 13 or 14
Pressure generates and the writing film of control method,
Further,
The blackboard further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Further, the blackboard further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character or standard of storage
Figure is sent to external equipment.
17. a kind of drawing board, which is characterized in that including electric using liquid crystal writing film selective erase described in claim 13 or 14
Pressure generates and the writing film of control method,
Further,
The drawing board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Further, the drawing board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character or standard of storage
Figure is sent to external equipment.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810621598.4A CN110147171B (en) | 2018-06-15 | 2018-06-15 | Liquid crystal writing film local erasing voltage generation and control method |
| JP2019564923A JP7130676B2 (en) | 2018-05-30 | 2019-01-10 | Partially erasable liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system |
| KR1020197034181A KR102328206B1 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film with partial erasure, partial erasure method, multiple voltage output circuit and positioning system |
| US16/492,689 US11137899B2 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| CA3057909A CA3057909C (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| AU2019236746A AU2019236746B2 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| PCT/CN2019/071227 WO2019227942A1 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film capable of implementing local erasure, local erasure method, multi-voltage output circuit, and positioning system |
| EP19786258.4A EP3605213A4 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film capable of implementing local erasure, local erasure method, multi-voltage output circuit, and positioning system |
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|---|---|---|---|
| CN201810621598.4A CN110147171B (en) | 2018-06-15 | 2018-06-15 | Liquid crystal writing film local erasing voltage generation and control method |
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| CN110147171B CN110147171B (en) | 2021-07-30 |
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