CN110147171B - Liquid crystal writing film local erasing voltage generation and control method - Google Patents
Liquid crystal writing film local erasing voltage generation and control method Download PDFInfo
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- CN110147171B CN110147171B CN201810621598.4A CN201810621598A CN110147171B CN 110147171 B CN110147171 B CN 110147171B CN 201810621598 A CN201810621598 A CN 201810621598A CN 110147171 B CN110147171 B CN 110147171B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0414—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using force sensing means to determine a position
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
Abstract
The invention discloses a method for generating and controlling local erasing voltage of a liquid crystal writing film, wherein the liquid crystal writing film is positioned between two conducting layers, a first conducting layer and a second conducting layer are respectively divided into two or more conducting areas, and A voltage is applied to the conducting area of the first conducting layer covering a local erasing area; applying a voltage of B to a conductive region of the second conductive layer covering the partially erased area; or, the first conductive layer is divided into two or more conductive regions, the second conductive layer is not divided, and a voltage is applied to the conductive region of the first conductive layer covering the partial erasing region; applying a voltage B to the second conductive layer; the invention can erase the local area of the written content, and the other areas are not affected by the erasure, thereby overcoming the defect that the traditional technology can only erase the written content completely, improving the working efficiency and the use experience of users, and improving the commercial value of the liquid crystal writing film and the application equipment thereof.
Description
Technical Field
The invention relates to the technical field of liquid crystal film structures, in particular to a method for generating and controlling local erasing voltage of a liquid crystal writing film.
Background
The liquid crystal writing film on the market at present has the working principle that the bistable characteristic of liquid crystal is utilized to display and/or erase the writing content on the liquid crystal writing board. For example, the cholesteric liquid crystal is used as a writing film, the writing pressure trace of a writing pen is recorded by the pressure acting on a liquid crystal writing board, and the corresponding writing content is displayed; the cholesteric liquid crystal structure is changed by applying an electric field, so that the writing pressure track on the liquid crystal writing board disappears to realize erasing.
The existing product adopting the liquid crystal writing film can only use a power-on mode to erase all handwriting in the whole liquid crystal writing board when the handwriting is erased, if a user only needs to erase part of the handwriting, the existing power-on erasing mode cannot meet the requirement, especially when the part with the error is modified, the existing integral erasing mode can cause the loss of other information which does not need to be modified, and how to use the power-on mode to realize the partial erasing becomes a problem which needs to be solved urgently by the user.
The writing film voltage control method disclosed in the prior art can only provide a single voltage for the conductive layers, and the whole erasing of the writing area is realized by using an electric field formed between the two conductive layers. This voltage control method cannot realize applying voltages to different conductive regions, cannot form effective voltage control to different local erase regions, and cannot realize the purpose of local erase.
Disclosure of Invention
The first purpose of the invention is to disclose a method for generating and controlling the local erasing voltage of a liquid crystal writing film, which utilizes different voltage values applied to different conductive areas to form a required electric field in an erasing area so as to realize local erasing.
In order to achieve the purpose, the invention adopts the following technical scheme:
the liquid crystal writing film is positioned between two conducting layers, and the two conducting layers are respectively divided into two or more conducting areas; it is characterized in that the process is as follows:
applying an a voltage to a conductive region of the first conductive layer covering the partially erased area; applying a voltage of B to a conductive region of the second conductive layer covering the partially erased area; the voltage A and the voltage B form an erasing electric field at the overlapped position of the two conductive areas to realize local erasing.
Further, the absolute value of the difference between the voltage A and the voltage B is greater than zero.
Further, a compensation voltage is applied to the conductive areas arranged outside the conductive areas of the two conductive layers covering the local erasing area, so that the electric field formed by the voltage difference between the conductive areas arranged outside the local erasing area on the two conductive layers can not cause the disappearance of the liquid crystal indentation.
Further, a voltage C is applied to a conductive area set outside the conductive area of each of the two conductive layers covering the local erasing area, and the voltage A, the voltage B and the voltage C satisfy the following relations by taking the voltage B as a reference value:
| A voltage-B voltage | > | A voltage-C voltage | A circuit
Voltage | A voltage-B voltage | > | C voltage-B voltage |;
preferably, the first and second electrodes are formed of a metal,
voltage | a-voltage | B voltage | C voltage-B voltage | 2.
Further, two or more compensation voltages are applied to the conductive areas set outside the conductive areas of the two conductive layers covering the local erasing area, so that the electric field formed by the voltage difference between the conductive areas set outside the local erasing area on the two conductive layers cannot cause the macroscopic lightening or disappearance of the liquid crystal indentation.
Further, a D voltage is applied to a conductive region set outside the conductive region on the first conductive layer covering the partial erasing region, and an E voltage is applied to a conductive region set outside the conductive region on the second conductive layer covering the partial erasing region; the voltage A, the voltage B, the voltage D and the voltage E satisfy the following relations by taking the voltage B as a reference value:
| A voltage-B voltage | > | D voltage-B voltage |
| A voltage-B voltage | > | A voltage-E voltage | A current conducting circuit
Voltage | A voltage-B voltage | > | D voltage-E voltage |;
preferably, the first and second electrodes are formed of a metal,
voltage | a-voltage | B-voltage | D-voltage | B-voltage | 3
Voltage | E-voltage | B-voltage | D-voltage-B-voltage | 2.
The second objective of the present invention is to disclose a multi-voltage output circuit for implementing the method for generating and controlling the local erasing voltage of the liquid crystal writing film, comprising: the boost circuit comprises a main controller and a boost circuit, wherein the main controller generates a control signal; the booster circuit generates corresponding voltage required by erasing the indentation according to the control signal generated by the main controller, the booster circuit outputs two or more voltages required by erasing the indentation, and an erasing electric field is formed by utilizing the relative voltage difference formed by the two or more voltages required by erasing the indentation, so that the indentation erasing is realized.
Further, the boost circuit comprises one or more voltage generating units, and the voltage generating unit comprises one or more inductance boost circuits; the input end of each inductance booster circuit receives a control signal of the main controller, and the output end outputs a required voltage;
preferably, the number of the inductive voltage boosting circuits is two, the input end of each inductive voltage boosting circuit receives a control signal of the master controller, and the output ends of the two inductive voltage boosting circuits are superposed to output a required voltage signal.
Further, the voltage generation unit comprises two inductance boosting circuits, and the specific structure is as follows:
a base electrode of the triode Q1 is connected with the resistor R2 in series, a collector electrode of the triode Q1 is connected with a tap of the inductor L2, and an emitter electrode of the triode Q1 is grounded; one end of the inductor L2 is connected with a power supply, the other end of the inductor L2 is connected with the anode of the diode D2, and the cathode of the diode D2 is grounded after being sequentially connected with the resistor R1 and the resistor R4 in series; the polar capacitor E1 and the capacitor C2 are respectively connected in parallel at two ends of a series branch of the resistor R1 and the resistor R4, the anode of the polar capacitor E1 is connected with the cathode of the diode D2, and the other end of the polar capacitor E1 is grounded; one end of the capacitor C2 is connected with the cathode of the diode D2, and the other end of the capacitor C2 is grounded;
the cathode of the diode D2 is connected with the cathode of the diode D1, the anode of the diode D1 is connected with one end of the inductor L1, and the other end of the inductor L1 is connected with a power supply; the base of the triode Q2 is connected in series with the resistor R3, the collector of the triode Q2 is connected with the tap of the inductor L1, and the emitter of the triode Q2 is grounded.
The invention realizes the local erasing by controlling the booster circuit to generate one or more set voltage values and forming an erasing electric field in the local erasable area.
According to the invention, by means of at least two paths of boosting, two paths of voltages are superposed and complemented to obtain the finally required local erasing voltage, and the problem of unstable output voltage caused by single-path boosting can be solved.
Furthermore, the voltage at the output end of the voltage generation unit is divided and then input to the main controller, and the main controller adjusts the output of the control signal in real time according to the received voltage, so that the voltage at the output end of the voltage generation unit is stable.
The voltage of the output end is divided and then fed back to the main controller, and the main controller adjusts the output of the control signal in real time according to the fed back voltage so as to ensure that the voltage of the output end is always stabilized at the voltage required by the indentation erasure.
Furthermore, the control signal output by the main controller is a PWM signal, and the control of the output voltage amplitude is realized by controlling the frequency and duty ratio of the PWM signal.
The third purpose of the invention is to disclose a writing film adopting the method for generating and controlling the local erasing voltage of the liquid crystal writing film, which comprises the following steps: dividing one of the first conductive layer or the second conductive layer of the writing film into two or more strip-shaped conductive areas which are insulated from each other;
the part where the conductive area, the liquid-proof layer and the undivided conductive layer are overlapped together is an erasable area.
The invention changes the current situation that only the whole body can be erased, the writing film is divided into a plurality of local erasable areas by dividing the conductive layer, and different electric fields are respectively formed on the local erasable areas by controlling the applied voltage, thereby realizing the local erasing.
In consideration of the processing cost and the difficulty degree of the process, the conductive layer is divided into the strip-shaped conductive areas, so that the processing efficiency is improved, the process cost is reduced, and the mass production is facilitated.
The fourth purpose of the invention is to disclose another writing film adopting the method for generating and controlling the local erasing voltage of the liquid crystal writing film, which comprises the following steps: the first conducting layer and the second conducting layer of the writing film are respectively divided into two or more mutually insulated conducting areas;
each conductive area of the first conductive layer is distributed along a first direction and is parallel to each other; each conductive area of the second conductive layer is distributed along a second direction and is parallel to each other, and the first direction and the second direction are mutually staggered in space; the conductive areas of the first conductive layer and the second conductive layer form an erasing area together with the liquid crystal layer area corresponding to the overlapped part of the space;
preferably, the first direction is perpendicular to the second direction.
The upper conducting layer and the lower conducting layer are respectively divided, so that different voltages can be applied to different conducting areas of the upper conducting layer and the lower conducting layer, the electric field control mode is more flexible, and the accuracy of local erasing is improved.
The segmentation mode provided by the invention is convenient for industrial batch processing, and meanwhile, the segmentation area can be miniaturized according to actual needs, and more accurate local erasing is realized by electrifying different conductive strips.
A fifth object of the present invention is to disclose a tablet, comprising: the writing film adopts the method for generating and controlling the local erasing voltage of the liquid crystal writing film;
further, the air conditioner is provided with a fan,
the tablet further comprises:
the handwriting storage unit is used for directly recording and storing writing track information; or converting the writing track into a standard character or a standard graph and storing the standard character or the standard graph;
furthermore, the tablet further comprises:
the handwriting storage unit is used for directly recording and storing writing track information; or converting the writing track into a standard character or a standard graph and storing the standard character or the standard graph;
and the communication unit is used for communicating with the external equipment and transmitting the stored writing track information or the standard characters or the standard graphics to the external equipment.
A sixth object of the present invention is to disclose a blackboard, comprising: the writing film adopts the method for generating and controlling the local erasing voltage of the liquid crystal writing film;
further, the air conditioner is provided with a fan,
the blackboard still include:
the handwriting storage unit is used for directly recording and storing writing track information; or converting the writing track into a standard character or a standard graph and storing the standard character or the standard graph;
further, the black also includes:
the handwriting storage unit is used for directly recording and storing writing track information; or converting the writing track into a standard character or a standard graph and storing the standard character or the standard graph;
and the communication unit is used for communicating with the external equipment and transmitting the stored writing track information or the standard characters or the standard graphics to the external equipment.
A seventh object of the present invention is to disclose a drawing board, comprising: the writing film adopts the method for generating and controlling the local erasing voltage of the liquid crystal writing film;
further, the air conditioner is provided with a fan,
the drawing board further comprises:
the handwriting storage unit is used for directly recording and storing writing track information; or converting the writing track into a standard character or a standard graph and storing the standard character or the standard graph;
furthermore, the drawing board further comprises:
the handwriting storage unit is used for directly recording and storing writing track information; or converting the writing track into a standard character or a standard graph and storing the standard character or the standard graph;
and the communication unit is used for communicating with the external equipment and transmitting the stored writing track information or the standard characters or the standard graphics to the external equipment.
Compared with the prior art, the invention has the beneficial effects that:
the invention applies different voltages to different conductive areas to form different electric fields in each erasing area respectively, and realizes the complete erasing of the pre-erasing area by controlling the applied voltages, while the rest erasing areas can not be completely erased, thereby realizing the purpose of local erasing.
According to the invention, a double-path boosting mode is adopted, and the finally required local erasing voltage is obtained after the two paths of voltages are superposed and complemented, so that the defect of unstable output voltage can be made up.
The liquid crystal writing film is divided into the plurality of erasing areas, the set voltage is applied to each erasing area of the liquid crystal writing film under the control of the multi-voltage output circuit, local area erasing of the written content can be realized, other areas are not affected by erasing, the defect that the traditional technology can only realize complete erasing is overcome, the working efficiency and the use experience of a user are improved, and the commercial value of the liquid crystal writing film and the application equipment thereof is improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application.
FIG. 1 is a schematic diagram of erasing a conductive region of a writing film by applying a voltage to a first half field according to an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating erasing by applying a voltage in a back field of each conductive region of a writing film according to an embodiment of the present invention;
FIG. 3 illustrates an example erase operation according to one embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating the erasing effect of FIG. 3;
FIG. 5 is a schematic diagram of erasing by applying a voltage to the first half field of each conductive region of the writing film according to the second embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating erasing by applying a voltage in a back field of each conductive region of a writing film according to a second embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating an erasing effect according to a second embodiment of the present invention;
fig. 8(a) is a schematic diagram of a four-way inductor boost circuit according to an embodiment of the present invention;
FIG. 8(b) is a schematic diagram of a four-way inductor boosting principle according to an embodiment of the present invention;
fig. 9(a) is a schematic structural diagram of a four-way inductor boost circuit according to an embodiment of the present invention;
fig. 9(b) is a schematic diagram of a four-way inductor boosting principle according to an embodiment of the present invention;
FIG. 10 is a diagram of a four-master controller according to an embodiment of the present invention;
FIG. 11 is a schematic structural view of a writing film according to a fifth embodiment of the present invention;
fig. 12 is a schematic structural view of a writing film according to a sixth embodiment of the present invention.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
Example one
The embodiment of the invention discloses a method for generating and controlling local erasing voltage of a liquid crystal writing film, wherein the liquid crystal writing film is positioned between two conducting layers, and the two conducting layers are respectively divided into two or more conducting regions;
applying an a voltage to a conductive region of the first conductive layer covering the partially erased area; applying a voltage of B to a conductive region of the second conductive layer covering the partially erased area; the voltage A and the voltage B form an erasing electric field at the overlapped position of the two conductive areas to realize local erasing.
C voltage is applied to the conductive areas which are set outside the conductive areas of the two conductive layers covering the partial erasing area, wherein the set conductive areas can be all the conductive areas except the conductive areas of the two conductive layers covering the partial erasing area, and can also be the conductive areas which are adjacent to the conductive areas covering the partial erasing area and are selected according to requirements.
The voltage A, the voltage B and the voltage C satisfy the following relations by taking the voltage B as a reference value:
| A voltage-B voltage | > | A voltage-C voltage | A circuit
Voltage | A voltage-B voltage | > | C voltage-B voltage |;
preferably, the first and second electrodes are formed of a metal,
voltage | a-voltage | B voltage | C voltage-B voltage | 2.
In the embodiment of the invention, the voltage A is set as an erasing high voltage Vh, the voltage B is set as a zero voltage, and the voltage C is set as an auxiliary voltage Va; the erasing high voltage Vh refers to the voltage required for completely erasing the handwriting.
Thus, the electric field formed across the liquid crystal writing film satisfies: the electric field of the area to be erased is an erasing high voltage Vh; the electric field of the erase region in the cross direction with the region to be erased as the center is set as the auxiliary voltage Va, and the electric fields of the remaining erase regions are set to be zero.
The relationship that needs to be satisfied between the erase high voltage Vh and the auxiliary voltage Va is as follows:
|Vh|＞|Vh-Va|
|Vh|＞|Va|；
as a preferred embodiment, we set:
|Vh|＝|Va|*2。
it should be noted that the voltages applied to the two conductive layers are interchanged at set intervals, so that the electric fields formed on the entire liquid crystal writing film are the same in magnitude but opposite in direction, thereby preventing the occurrence of the phenomenon of liquid crystal polarization caused by applying an electric field in the same direction to the liquid crystal writing film for a long time. Hereinafter, we refer to two periods in which the electric field direction is different as a first half field and a second half field, respectively.
The voltages applied to the conductive regions of the writing film are shown in fig. 1 or fig. 2. Wherein, fig. 1 is the voltage applied to the front half field of each conductive area of the writing film, and fig. 2 is the voltage applied to the back half field of each conductive area of the writing film; the order of the first half field and second half field supply voltages may be interchanged.
As can be seen from fig. 1, only the region with the electric field of 2Va is completely erased, and the region with the electric field of 0 is not erased; the area with the electric field of Va is not completely erased, but due to the same existence of the electric field, the molecular arrangement mode of the writing film can be changed to a certain degree under the action of the applied electric field, because the complete erasing voltage is not reached, the molecules can not be completely changed from the plane structure to the focal conic structure, but the display effect can be influenced to a certain degree, and the writing of the area is lightened visually, and the local erasing is not desirable.
As can be seen from fig. 2, the electric field formed on the writing film is reversed, and only the region with the electric field of-2 Va is completely erased, the region with the electric field of 0 is not erased, and the region with the electric field of-Va is not completely erased, but there is also the problem described in fig. 1.
Specific examples are given in fig. 3 and 4 to illustrate the writing film local erase voltage generation and control method of the present invention. In fig. 3, if only erasing the "medium" word is desired, it is necessary to apply an erasing high voltage 2Va to the conductive region corresponding to h in the first half field, apply a zero voltage to the conductive region corresponding to c, and apply an auxiliary voltage Va to the remaining conductive regions, so that the electric field formed by the erasing region where the "medium" word is located is 2Va, a condition of complete erasing is achieved, and complete erasing can be achieved; the four characters of the four characters, i.e. upper, lower, left and right, will be lighter and affect the visual effect, as shown in fig. 4. The latter half field is the same.
Example two
The embodiment of the invention discloses another method for generating and controlling the local erasing voltage of a liquid crystal writing film, which overcomes the defects of the control method in the second embodiment and specifically comprises the following steps:
the liquid crystal writing film is positioned between two conductive layers, and the two conductive layers are respectively divided into two or more conductive regions;
applying an a voltage to a conductive region of the first conductive layer covering the partially erased area; applying a voltage of B to a conductive region of the second conductive layer covering the partially erased area; the voltage A and the voltage B form an erasing electric field at the overlapped position of the two conductive areas to realize local erasing.
Applying a D voltage to a conductive region set outside a conductive region on a first conductive layer covering the partial erase region, and applying an E voltage to a conductive region set outside a conductive region on a second conductive layer covering the partial erase region; the conductive area may be all conductive areas except the conductive areas of the two conductive layers covering the partial erasing area, or may be a conductive area adjacent to the conductive area covering the partial erasing area, which is selected according to the need.
The voltage A, the voltage B, the voltage D and the voltage E satisfy the following relations by taking the voltage B as a reference value:
| A voltage-B voltage | > | D voltage-B voltage |
| A voltage-B voltage | > | A voltage-E voltage | A current conducting circuit
The | A voltage-B voltage | > | D voltage-E voltage | A current conducting device
Preferably, the first and second electrodes are formed of a metal,
voltage | a-voltage | B-voltage | D-voltage | B-voltage | 3
Voltage | E-voltage | B-voltage | D-voltage | B-voltage | 2
In the embodiment of the present invention, the voltage a is set as the erase high voltage Vh, the voltage B is set as the zero voltage, the voltage D is set as the second auxiliary voltage Va2, and the fifth voltage is set as the first auxiliary voltage Va 1; the erasing high voltage is the voltage required for completely erasing the handwriting.
Thus, the electric field formed across the writing film satisfies: the voltage difference of the to-be-erased area is the erase high voltage, and the voltage difference of the rest erase areas is the second auxiliary voltage Va 2.
The relationship that needs to be satisfied between the erase high voltage Vh and the auxiliary voltages Va1, Va2 is as follows:
|Vh|＞|Va2|
|Vh|＞|Vh-Va1|
|Vh|＞|Va2-Va1|；
as a preferred embodiment, we set:
|Vh|＝|Va2|*3；
|Va1|＝|Va2|*2；
the voltages applied to the conductive regions of the writing film are shown in fig. 5 or fig. 6, wherein fig. 5 is the voltage applied to the first half field of the conductive regions of the writing film, and fig. 6 is the voltage applied to the second half field of the conductive regions of the writing film; the first half field and second half field supply voltages may be interchanged in sequence. The first half field and the second half field in this embodiment have the same meaning as in embodiment one.
As can be seen from fig. 5, at this time, only the region with the electric field of 3Va2 is completely erased, the region with the electric field of Va2 is not erased, and although the liquid crystal film molecules in the region with the electric field of Va2 are also affected by the electric field, since the electric field is the same and the change rule of the molecules is the same, the effect is uniform and no visual display difference is caused, it can be considered that the region with the electric field of Va2 is not erased. In this way, a complete erasure of the pre-erased partial area is achieved, while the handwriting of the area outside the pre-erased partial area is not affected by the erasure.
As can be seen from fig. 6, the electric field formed on the liquid crystal writing film was reversed, and only the region with the electric field of-3 Va2 was completely erased, and the region with the electric field of-Va 2 was not erased.
Also taking fig. 3 as an example, if one wants to erase only the "medium" word:
for the first conductive layer, it is necessary to apply the erasing high voltage 3Va2 to the conductive area corresponding to h in the first half field, and apply the second auxiliary voltage Va2 to the conductive areas corresponding to f, g, i and j; applying zero voltage to the conductive area corresponding to h in the second half field, and applying a first auxiliary voltage 2Va2 to the conductive areas corresponding to f, g, i and j;
for the second conductive layer, zero voltage needs to be applied to the conductive area corresponding to c in the first half field, and the first auxiliary voltage 2Va2 needs to be applied to the conductive areas corresponding to a, b, d and e; applying auxiliary high voltage 3Va2 to the conductive area corresponding to c in the second half field, and applying second auxiliary voltage Va2 to the conductive areas corresponding to a, b, d and e;
thus, no matter the first half field or the second half field, the electric field of the crossed region of the conductive regions corresponding to h and c, namely the region of the middle word is 3Va2, the erasing voltage is reached, and the whole body is erased; the electric field in the rest areas is the same, namely Va2, and the writing is almost unchanged visually, as shown in figure 7. The purpose of erasing only the "middle" word is achieved, while the rest of the area is erased.
Similarly, in fig. 3, if only "middle and lower" words are to be erased, the voltages applied in the first half field are: h corresponds to a conductive region of 3Va 2; the conductive areas corresponding to c and d are 0; a. b and e correspond to conductive regions of 2Va 2; f. the conductive areas corresponding to g, i and j are Va 2;
the voltages required to be applied in the second half field are respectively: h corresponds to a conductive area of 0; c and d correspond to a conductive region of 3Va 2; a. b and e correspond to conductive areas Va 2; f. the conductive area corresponding to g, i and j is 2Va 2.
Thus, the "middle and bottom" words are completely erased regardless of the first half field or the second half field, while the rest of the writing is not visually affected.
If one wants to erase only the three words "2 on 1", the first half field needs to be applied with voltages: g. h and i correspond to conductive regions of 3Va 2; b corresponds to the conductive area is 0; a. c, d and e correspond to conductive regions 2Va 2; f. j corresponds to conductive region Va 2;
the voltages required to be applied in the second half field are respectively: the corresponding conductive area is 0; b corresponds to a conductive region of 3Va 2; a. c, d and e correspond to conductive areas Va 2; f. j corresponds to a conductive region of 2Va 2.
This enables the three words "2 on 1" to be completely erased, while the rest of the writing is visually unaffected.
EXAMPLE III
The embodiment of the invention discloses a method for generating and controlling local erasing voltage of a liquid crystal writing film, wherein the liquid crystal writing film is positioned between two conducting layers, and a first conducting layer is divided into two or more conducting regions;
applying an a voltage to a conductive region of the first conductive layer covering the partially erased area; applying a voltage B to the second conductive layer; and the voltage A and the voltage B form an erasing electric field at the overlapped position of the conductive area of the first conductive layer and the second conductive layer to realize local erasing.
In this way, the overlapping portions of each conductive region of the first conductive layer and the second conductive layer form local erase regions, respectively.
The first conductive layer can be divided into two conductive areas with the same size, namely an upper conductive area, a lower conductive area and a left conductive area, as required, in such a way, an erasing high voltage Vh is applied to one conductive area, wherein the erasing high voltage is a voltage required for completely erasing the written handwriting, and zero voltage is respectively applied to the other conductive area and the second conductive area, so that an electric field formed on the whole liquid crystal writing film meets the following requirements: an electric field of a local erasing area formed by a part of the conductive area applying the erasing high voltage and the second conductive layer which are mutually overlapped is Vh; the electric field of the remaining erased areas is zero. It is possible to achieve complete erasure of the conductive area to which the erase high voltage is applied, i.e. erasure of half the area of the writing board.
Or, the first conductive layer is divided into four conductive regions with the same size, and erasing high voltage Vh is applied to one of the conductive regions, and zero voltage is applied to the other conductive region and the second conductive layer, respectively, so that the electric field formed on the entire liquid crystal writing film satisfies: an electric field of a local erasing area formed by a part of the conductive area applying the erasing high voltage and the second conductive layer which are mutually overlapped is Vh; the electric field of the remaining erased areas is zero. Complete erasure of the conductive area to which the erase high voltage is applied, i.e. erasure of the 1/4 area of the writing board, can be achieved.
Or the first conductive layer is divided into conductive areas in any form, so that the written handwriting in different areas can be erased.
Example four
The embodiment of the invention discloses a multi-voltage output circuit for realizing the writing film local erasing voltage generation and control method in the first embodiment or the second embodiment or the third embodiment, which comprises the following steps: a master controller and a booster circuit connected to each other.
The main controller is a main control MCU and is used for generating control signals and outputting the control signals to the booster circuit.
The booster circuit comprises one or more voltage generating units, and each voltage generating unit can generate one path of voltage according to a control signal of the main controller.
The main controller outputs PWM signals to each voltage generation unit, and controls the voltage value generated by the voltage generation unit by controlling the phase difference and the duty ratio of the PWM signals.
Each voltage generating unit comprises one or more than one inductance boosting circuit; the input end of each inductance booster circuit receives the PWM signal output by the main controller, and the output end outputs a required voltage.
The voltage generation unit of the invention can realize boosting by one path of inductance booster circuit, the schematic diagram of one path of inductance booster circuit is shown in fig. 8(a), and the voltage amplitude output by the output end Vout is controlled by controlling the phase difference and the duty ratio of PWM 11; when one path of the inductor booster circuit is used, the principle equivalent diagram of the control waveform is shown in fig. 8(b), and it can be known from the diagram that the fluctuation of the voltage amplitude of the output terminal Vout is large, which is not favorable for voltage stabilization.
The voltage generating unit can also realize boosting by two or more than two paths of inductance boosting circuits, and the output voltage of each path of inductance boosting circuit is superposed into a voltage value to be output, so that the voltage generating unit is favorable for stabilizing the voltage and avoids the voltage fluctuation of the output end.
As a preferred embodiment, when the voltage generating unit of the present invention is in the form of a two-way inductor boosting circuit, a specific structure thereof is as shown in fig. 9(a), and includes: a base electrode of the triode Q1 is connected with the resistor R2 in series, a collector electrode of the triode Q1 is connected with a middle tap of the inductor L2, and an emitter electrode of the triode Q1 is grounded; one end of the inductor L2 is connected with an input power supply, the other end of the inductor L2 is connected with the anode of the diode D2, and the cathode of the diode D2 is grounded after being sequentially connected with the resistor R1 and the resistor R4 in series; the polar capacitor E1 and the capacitor C2 are respectively connected in parallel at two ends of a series branch of the resistor R1 and the resistor R4, the anode of the polar capacitor E1 is connected with the cathode of the diode D2, and the other end of the polar capacitor E1 is grounded; one end of the capacitor C2 is connected with the cathode of the diode D2, and the other end of the capacitor C2 is grounded;
the cathode of the diode D2 is also connected with the cathode of the diode D1, the anode of the diode D1 is connected with one end of the inductor L1, and the other end of the inductor L1 is connected with an input power supply; the base of the triode Q2 is connected in series with the resistor R3, the collector of the triode Q2 is connected with the middle tap of the inductor L1, and the emitter of the triode Q2 is grounded.
In fig. 9(a), the voltage generating unit includes two inductor boost circuits, which are respectively one of an inductor L1, a diode D1, a resistor R3, and a transistor Q2, and the other of the inductor L2, the diode D2, the resistor R2, and the transistor Q1; the input signals of the two paths of inductance voltage boosting circuits are PWM1-1 and PWM1-2 from the master controller respectively, and the output signals of the two paths of inductance voltage boosting circuits are superposed and then output corresponding voltages at an output end Vout. The amplitude and the phase of the output voltage of each path of the inductance booster circuit are controlled by adjusting the duty ratio and the phase difference of each PWM signal, so that the voltage output by the two paths of the inductance booster circuits can be superposed to obtain the required stable voltage.
If only one of the inductor boosting circuits is used, the fluctuation of the voltage value of the output Vout is large, which is not beneficial to voltage stabilization; after the other boosting network circuit is added, the phase difference and duty ratio distribution condition of the PWM1-1 and the PWM1-2 of the two boosting network circuits are adjusted to enable the finally output voltage to be stabilized at a set value, a control waveform principle equivalent diagram is shown in fig. 9(b), two paths of voltages are respectively formed through the PWM1-1 and the PWM1-2, the two output voltages have fluctuation, and after amplitude superposition is carried out on the two paths of voltages, a stable voltage value can be formed, such as a finally superposed solid line part.
The required voltage is obtained after superposition and is output to Vout, E1 and C2 are filter capacitors, resistors R1 and R4 form a voltage division resistor network for detecting the output voltage value, the output voltage is divided by resistors R1 and R4, an output end adc1 feeds the divided voltage back to a main controller, and the main controller adjusts the duty ratio and the phase difference of PWM1-1 and PWM1-2 in real time according to the received feedback voltage, so that the purpose of stably outputting the required voltage value is achieved.
The embodiment of the invention takes the example that the booster circuit comprises three voltage generating units, each voltage generating unit is boosted by two inductance booster circuits, and the structure and the working principle of the three voltage generating units are the same; in this embodiment, the model of the master control chip is SM59R16A5C, as shown in fig. 10, other master control chips capable of implementing the functions of the present invention, which can be known by those skilled in the art, are also within the protection scope of the present invention.
EXAMPLE five
The embodiment of the invention discloses a writing film adopting a local erasing voltage generation and control method on the basis of the first embodiment, as shown in fig. 11, comprising: the liquid crystal display panel comprises a first conductive layer, a liquid crystal layer and a second conductive layer which are sequentially arranged from top to bottom; the first conducting layer is divided into three strip-shaped conducting areas which are parallel to each other by an etching line, and the second conducting layer is not divided; the portions of the conductive region on the first conductive layer and the second conductive layer that overlap each other form a first erase region, a second erase region, and a third erase region.
Voltages are applied to the conductive regions on the first conductive layer and the second conductive layer, respectively, so that electric fields can be formed in the first erasing region, the second erasing region and the third erasing region, respectively, and local erasing is realized by using different electric fields formed in each erasing region.
In this embodiment, the conductive region is divided only on one of the conductive layers, and the area of the formed local erasing region is determined by the conductive region.
EXAMPLE six
The embodiment of the invention discloses another writing film adopting a local erasing voltage generation and control method on the basis of the second embodiment, as shown in fig. 12, the writing film comprises: the liquid crystal display panel comprises a first conductive layer, a liquid crystal layer and a second conductive layer which are sequentially arranged from top to bottom;
the first conducting layer is divided into two or more transverse conducting areas which are mutually insulated, the second conducting layer is divided into two or more longitudinal conducting areas which are mutually insulated, and the conducting areas are equally spaced; the conductive regions on the first conductive layer are spatially vertically interleaved with the conductive regions on the second conductive layer. By dividing the conductive layer, the writing film is divided into a mesh structure, and each mesh is a separate erasing area.
Applying a voltage to each of the conductive regions on the first conductive layer and the second conductive layer enables an electric field to be formed in each of the erase regions, and local erasing is performed using a different electric field formed in each of the erase regions.
In one embodiment, the first conductive layer is divided into two horizontal conductive regions, the second conductive layer is divided into two vertical conductive regions, and four erase regions are formed at the spatially overlapped portions of the two conductive layers.
In this embodiment, the upper and lower conductive layers are divided into conductive regions, and the area of the formed local erasing region is determined by the spatially staggered region of the conductive regions in the two upper and lower conductive layers.
EXAMPLE seven
The embodiment of the invention discloses a specific application product of a liquid crystal writing film adopting a local erasing voltage generating and controlling method on the basis of the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, the fifth embodiment or the sixth embodiment, such as:
the liquid crystal writing film adopting the local erasing voltage generation and control method is applied to the writing board, and the local erasing function of the writing board is realized.
Further, in the conventional liquid crystal writing board capable of memorizing, for example, when writing, pressure is sensed through a resistance-type touch screen, a pressure position is calculated, a handwriting track is fed back and recorded, and the storage of the writing track is realized; or converting the writing track into a standard character or a standard graph for storage.
The liquid crystal writing film adopting the local erasing voltage generation and control method is applied to the liquid crystal writing board capable of memorizing, and the function of local erasing is realized.
Furthermore, a communication unit is arranged on the writing board with the memory function and the local erasing function, and the communication unit is communicated with external equipment in a wired or wireless communication mode.
The external device may be a mobile terminal such as a mobile phone or PAD, or may be a PC or other device terminal as will occur to those skilled in the art.
Similarly, the liquid crystal writing film adopting the local erasing voltage generating and controlling method of the invention can also be applied to other memorable blackboards or drawing boards, and can transmit the stored writing track information or standard characters or standard graphics to external equipment through the communication unit.
As another embodiment, the liquid crystal writing film using the local erasing voltage generation and control method of the present invention is applied to a light energy writing board, a light energy liquid crystal writing board, a light energy large liquid crystal writing blackboard, a light energy dust-free writing board, a light energy portable blackboard, an electronic drawing board, an lcd electronic writing board, an electronic note book, a doodle board, a child writing board, a child doodle drawing board, an erasing function sketch board, a liquid crystal electronic drawing board, a color liquid crystal writing board, or other related products known to those skilled in the art, so as to implement the local erasing function of the above products.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (23)
1. The liquid crystal writing film local erasing voltage generating and controlling method, the liquid crystal layer locates between two conducting layers, two conducting layers are divided into two or more conducting areas separately; it is characterized in that the process is as follows:
applying an a voltage to a conductive region of the first conductive layer covering the partially erased area; applying a voltage of B to a conductive region of the second conductive layer covering the partially erased area; the voltage A and the voltage B form an erasing electric field at the overlapped position of the two conductive areas to realize local erasing;
applying a compensation voltage to the conductive areas arranged outside the conductive areas of the two conductive layers covering the local erasing area, so that the electric field formed by the voltage difference between the conductive areas arranged outside the local erasing area on the two conductive layers can not cause the disappearance of the liquid crystal indentation;
and the absolute value of the difference value of the voltage A and the voltage B is greater than zero.
2. The method for generating and controlling a partial erasing voltage of a liquid crystal writing film according to claim 1, wherein a voltage C is applied to a conductive area set outside a conductive area of each of two conductive layers covering the partial erasing area, and with the voltage B as a reference value, the following relationships are satisfied among the voltage a, the voltage B, and the voltage C:
| A voltage-B voltage | > | A voltage-C voltage | A circuit
Voltage | a-voltage | pressure | is greater than voltage | C-voltage |.
3. The method for generating and controlling a local erasing voltage of a liquid crystal writing film according to claim 2,
voltage | a-voltage | B voltage | C voltage-B voltage | 2.
4. The liquid crystal writing film local erasing voltage generating and controlling method, the liquid crystal layer locates between two conducting layers, two conducting layers are divided into two or more conducting areas separately; it is characterized in that the process is as follows:
applying an a voltage to a conductive region of the first conductive layer covering the partially erased area; applying a voltage of B to a conductive region of the second conductive layer covering the partially erased area; the voltage A and the voltage B form an erasing electric field at the overlapped position of the two conductive areas to realize local erasing;
and applying two or more compensation voltages to the conductive regions arranged outside the conductive regions of the two conductive layers covering the local erasing area, so that the electric field formed by the voltage difference between the conductive regions arranged outside the local erasing area on the two conductive layers can not cause the visible lightening or disappearance of the liquid crystal indentation.
5. The method for generating and controlling a local erase voltage of a liquid crystal writing film according to claim 4, wherein an absolute value of a difference between the voltage A and the voltage B is greater than zero.
6. The method for generating and controlling a partial erasing voltage of a liquid crystal writing film according to claim 4, wherein a D voltage is applied to a conductive area set outside a conductive area on a first conductive layer covering the partial erasing area, and an E voltage is applied to a conductive area set outside a conductive area on a second conductive layer covering the partial erasing area; the voltage A, the voltage B, the voltage D and the voltage E satisfy the following relations by taking the voltage B as a reference value:
| A voltage-B voltage | > | D voltage-B voltage |
| A voltage-B voltage | > | A voltage-E voltage | A current conducting circuit
Voltage | a-voltage | B voltage | > | D voltage-E voltage |.
7. The method for generating and controlling a local erasing voltage of a liquid crystal writing film according to claim 6,
voltage | a-voltage | B-voltage | D-voltage | B-voltage | 3
Voltage | E-voltage | B-voltage | D-voltage-B-voltage | 2.
8. A multi-voltage output circuit for realizing the method for generating and controlling the local erasing voltage of the liquid crystal writing film according to any one of claims 1 to 7, comprising: the boost circuit comprises a main controller and a boost circuit, wherein the main controller generates a control signal; the booster circuit generates corresponding voltage required by the scratch erasing according to the control signal generated by the main controller.
9. The multi-voltage output circuit according to claim 8, wherein the boosting circuit outputs two or more voltages required for erasing the indentations, and the erasing electric field is formed by a relative voltage difference formed by the two or more voltages required for erasing the indentations, thereby realizing the erasure of the indentations.
10. The multi-voltage output circuit of claim 8, wherein the boost circuit comprises one or more voltage generating units comprising one or more inductive boost circuits; the input end of each inductance booster circuit receives a control signal of the main controller, and the output end outputs a required voltage.
11. The multi-voltage output circuit of claim 10, wherein there are two inductive boost circuits, each having an input terminal receiving a control signal from the master controller, and output terminals overlapping to output a desired voltage signal.
12. The multi-voltage output circuit according to claim 10, wherein the voltage generating unit comprises two inductive boost circuits, which are specifically configured as:
a base electrode of the triode Q1 is connected with the resistor R2 in series, a collector electrode of the triode Q1 is connected with a tap of the inductor L2, and an emitter electrode of the triode Q1 is grounded; one end of the inductor L2 is connected with a power supply, the other end of the inductor L2 is connected with the anode of the diode D2, and the cathode of the diode D2 is grounded after being sequentially connected with the resistor R1 and the resistor R4 in series; the polar capacitor E1 and the capacitor C2 are respectively connected in parallel at two ends of a series branch of the resistor R1 and the resistor R4, the anode of the polar capacitor E1 is connected with the cathode of the diode D2, and the other end of the polar capacitor E1 is grounded; one end of the capacitor C2 is connected with the cathode of the diode D2, and the other end of the capacitor C2 is grounded;
the cathode of the diode D2 is connected with the cathode of the diode D1, the anode of the diode D1 is connected with one end of the inductor L1, and the other end of the inductor L1 is connected with a power supply; the base of the triode Q2 is connected in series with the resistor R3, the collector of the triode Q2 is connected with the tap of the inductor L1, and the emitter of the triode Q2 is grounded.
13. The multi-voltage output circuit of claim 10, wherein the voltage at the output terminal of the voltage generating unit is divided and then inputted to the master controller, and the master controller adjusts the output of the control signal in real time according to the received voltage to stabilize the voltage at the output terminal of the voltage generating unit.
14. A multi-voltage output circuit according to any of claims 8 to 13 wherein the control signal output by the master is a PWM signal.
15. A writing film using the method for generating and controlling a local erasing voltage of a liquid crystal writing film according to any one of claims 1 to 7, comprising: dividing one of the first conductive layer or the second conductive layer of the writing film into two or more strip-shaped conductive areas which are insulated from each other;
the conductive region, the liquid crystal layer and the undivided conductive layer are overlapped together to form an erasable region.
16. A writing film using the method for generating and controlling a local erasing voltage of a liquid crystal writing film according to any one of claims 1 to 7, comprising: the first conducting layer and the second conducting layer of the writing film are respectively divided into two or more mutually insulated conducting areas;
each conductive area of the first conductive layer is distributed along a first direction and is parallel to each other; each conductive area of the second conductive layer is distributed along a second direction and is parallel to each other, and the first direction and the second direction are mutually staggered in space; the conductive areas of the first conductive layer and the second conductive layer form an erasable area together with the corresponding liquid crystal layer area at the overlapped part of the space.
17. The writing film using the liquid crystal writing film local erase voltage generation and control method as claimed in claim 16, wherein the first direction is perpendicular to the second direction.
18. A writing board comprising the writing film according to claim 15 or 16 using the liquid crystal writing film local erasing voltage generating and controlling method;
the tablet further comprises:
the handwriting storage unit is used for directly recording and storing writing track information; or converting the writing track into a standard character or a standard graph and storing the standard character or the standard graph.
19. The tablet of claim 18, further comprising:
and the communication unit is used for communicating with the external equipment and transmitting the stored writing track information or the standard characters or the standard graphics to the external equipment.
20. A blackboard comprising a writing film according to claim 15 or 16, which employs the liquid crystal writing film local erasing voltage generating and controlling method;
the blackboard still include:
the handwriting storage unit is used for directly recording and storing writing track information; or converting the writing track into a standard character or a standard graph and storing the standard character or the standard graph.
21. A blackboard according to claim 20, further comprising:
and the communication unit is used for communicating with the external equipment and transmitting the stored writing track information or the standard characters or the standard graphics to the external equipment.
22. A drawing board comprising the writing film according to claim 15 or 16 using the liquid crystal writing film local erase voltage generation and control method;
the drawing board further comprises:
the handwriting storage unit is used for directly recording and storing writing track information; or converting the writing track into a standard character or a standard graph and storing the standard character or the standard graph.
23. A sketchpad as claimed in claim 22, further comprising:
and the communication unit is used for communicating with the external equipment and transmitting the stored writing track information or the standard characters or the standard graphics to the external equipment.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810621598.4A CN110147171B (en) | 2018-06-15 | 2018-06-15 | Liquid crystal writing film local erasing voltage generation and control method |
| EP19786258.4A EP3605213A4 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film capable of implementing local erasure, local erasure method, multi-voltage output circuit, and positioning system |
| JP2019564923A JP7130676B2 (en) | 2018-05-30 | 2019-01-10 | Partially erasable liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system |
| KR1020197034181A KR102328206B1 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film with partial erasure, partial erasure method, multiple voltage output circuit and positioning system |
| PCT/CN2019/071227 WO2019227942A1 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film capable of implementing local erasure, local erasure method, multi-voltage output circuit, and positioning system |
| CA3057909A CA3057909C (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| US16/492,689 US11137899B2 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| AU2019236746A AU2019236746B2 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
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| CN201810621598.4A CN110147171B (en) | 2018-06-15 | 2018-06-15 | Liquid crystal writing film local erasing voltage generation and control method |
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| CN110703527B (en) * | 2019-09-04 | 2022-11-11 | 陈华丰 | Liquid crystal display device and erasing method thereof |
| CN110928445A (en) * | 2019-10-31 | 2020-03-27 | 山东蓝贝思特教装集团股份有限公司 | Local erasing voltage loading control method for liquid crystal writing film |
| CN112180628A (en) * | 2020-09-11 | 2021-01-05 | 山东蓝贝思特教装集团股份有限公司 | Liquid crystal writing device, local erasing method and display method |
| CN112904606B (en) * | 2020-12-28 | 2022-03-04 | 山东蓝贝思特教装集团股份有限公司 | Bistable liquid crystal writing device with quick electric driving display function and method |
| CN112684647B (en) * | 2021-01-29 | 2021-08-31 | 山东蓝贝思特教装集团股份有限公司 | Local erasing voltage control method and system for liquid crystal writing device |
| CN117452729B (en) * | 2023-12-20 | 2024-04-12 | 山东蓝贝思特教装集团股份有限公司 | Erasing control method and device for liquid crystal writing device |
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