CN108549169A - Using writing film and processing technology that selective erase can be achieved made of etching technics and application - Google Patents
Using writing film and processing technology that selective erase can be achieved made of etching technics and application Download PDFInfo
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- CN108549169A CN108549169A CN201810541991.2A CN201810541991A CN108549169A CN 108549169 A CN108549169 A CN 108549169A CN 201810541991 A CN201810541991 A CN 201810541991A CN 108549169 A CN108549169 A CN 108549169A
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- 238000005530 etching Methods 0.000 title claims abstract description 46
- 238000012545 processing Methods 0.000 title claims abstract description 11
- 238000005516 engineering process Methods 0.000 title abstract description 13
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 189
- 238000003860 storage Methods 0.000 claims description 14
- 238000004891 communication Methods 0.000 claims description 9
- 238000000608 laser ablation Methods 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 13
- 230000007812 deficiency Effects 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003098 cholesteric effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a kind of using the writing film that selective erase can be achieved made of etching technics and processing technology and application, including：The first conductive layer, liquid crystal layer and the second conductive layer arranged successively；Using lithographic method, which is divided into the strip-shaped conductive region of two or more mutually insulateds；The part that conductive region, liquid crystal layer and undivided conductive layer are overlapped jointly is erasable region；Alternatively, using lithographic method, the first conductive layer and the second conductive layer are divided into the conductive region of two or more mutually insulateds respectively；Erasing region is collectively formed in lap of the conductive region of first conductive layer and the second conductive layer in space liquid crystal layer region corresponding with the part；Advantageous effect of the present invention：It can realize the regional area erasing for written contents, and other regions are not influenced then by erasing, the deficiency all wiped can only be realized by overcoming traditional technology, improve the commercial value of liquid crystal writing film and its application apparatus.
Description
Technical field
The present invention relates to liquid crystal writing technical field of membrane, more particularly to a kind of using achievable office made of etching technics
The writing film and processing technology of portion's erasing and application.
Background technology
Liquid crystal writing film described in this patent shows film in liquid crystal components, work with common liquid crystal display film and plasma
Make principle, application range, occupation mode etc. and there is significant difference, especially in terms of writing, common liquid crystal display
Film and plasma show that film cannot achieve impression and write and wipe trace.
Liquid crystal writing film on the market at present, operation principle be using the bistable characteristic of liquid crystal realize display and/or
Wipe the written contents on liquid crystal board.Such as using cholesteric liquid crystal as writing film, by acting on liquid crystal board
Pressure record the writing pressure trajectories of lettering pen, and then show corresponding written contents；Make cholesteric phase by applying electric field
Liquid crystal structure changes, and so that the writing pressure trajectories on liquid crystal board is disappeared to realize erasing.
The existing product using liquid crystal writing film is only capable of using the power on mode and realize entirely when carrying out handwriting erasing
The erasing of all person's handwritings in liquid crystal writing plate, when only needing erasing part writing such as user, then existing energization erasing mode can not
Meet needs, when especially modifying to writing vicious part, existing entirety erasing mode will cause remaining not
The loss of modification information, the mode that how to use the power on is needed to realize that part wipes, become user's problem in the urgent need to address.
Invention content
The first object of the present invention is to disclose a kind of writing film using achievable selective erase made of etching technics, should
Selective erase can be realized using internal field in writing film, and erasing speed is fast, with wipe with writing, promptness is good, selective erase and
That writes is efficient.
To achieve the goals above, the present invention adopts the following technical scheme that：
A kind of writing film using achievable selective erase made of etching technics, including：
The first conductive layer, liquid crystal layer and the second conductive layer arranged successively；
Using lithographic method, at least one is etched on one of them in the first conductive layer of writing film or the second conductive layer
The conductive layer is divided into the strip-shaped conductive of two or more mutually insulateds by the etched line by the etched line of insulation
Region；
The part that the conductive region, exhausted liquid crystal layer and undivided conductive layer are overlapped jointly is erasable region.
The present invention changes the present situation that can only integrally wipe, and is split to conductive layer by lithographic method, by writing film
It is divided into the erasable region in several parts, is superimposed to form voltage difference using the electric field in these regions, can realize selective erase.
Further, each strip-shaped conductive region is mutually parallel.
In view of processing cost and the complexity of technique, conductive layer is divided into strip-shaped conductive region by the present invention, into
One step, each strip-shaped conductive region is arranged in parallel, is conducive to improve processing efficiency, reduces process costs, raw convenient for batch
Production.
Further, each conductive region should at least include the part at its said conductive layer edge, be conducive to be each
Conductive region provides voltage, and does not influence the writing quality of writing film.
Further, the line width of the etched line is not more than 1mm；
Preferably, the line width of the etched line is between 10 μm~200 μm.
The setting of etched line line width has very important influence for the writing of writing film and display effect, and etched line is too
Tolerance easily lead to erasing it is not clean, influence display effect；Etched line is too carefully higher to the required precision of production technology, is unfavorable for industry
Production.
Further, each conductive region is of same size；
Preferably, the width of the conductive region is 1mm-15mm.
The second object of the present invention is to disclose another using the writing that selective erase can be achieved made of etching technics
Film, including：
The first conductive layer, liquid crystal layer and the second conductive layer arranged successively；
Using lithographic method, at least one insulation is etched respectively on the first conductive layer and the second conductive layer of writing film
First conductive layer and the second conductive layer are divided into two or more mutually by etched line respectively by the etched line
The conductive region of insulation；
Lap with the part corresponding liquid of the conductive region of first conductive layer and the second conductive layer in space
Erasing region is collectively formed in crystal layer region；
Each conductive region of first conductive layer is distributed along first direction, is mutually parallel；Second conductive layer it is each
Conductive region is distributed in a second direction, is mutually parallel, and first direction and second direction are spatially interlaced.
Preferably, the first direction is vertical with second direction.
Upper layer and lower layer conductive layer is split respectively by lithographic method, it is conductive in the difference of upper and lower two conductive layer in this way
Region can apply different voltage, and electric field controls mode is more flexible, while improve the accuracy of selective erase.
The partitioning scheme that the present invention provides is processed convenient for industrial mass, while can make cut zone according to actual needs
Miniaturization realizes more accurate selective erase by the energization to different conductive strips.
Further, the line width of the etched line is not more than 1mm；
Preferably, the line width of the etched line is between 10 μm~200 μm.
Further, each conductive region of first conductive layer should at least include one of first conductive layer edge
Point；Each conductive region of second conductive layer should at least include the part at second conductive layer edge.
Further, the conductive region on first conductive layer or on the second conductive layer is of same size；Equidistantly
The mode of segmentation so that segmentation is more uniform, can effectively control erasing region；Also, spacing is smaller, selective erase accuracy
It is higher.
Preferably, the width of the conductive region is preferably 1mm-15mm.The range can ensure the same of erasing effect
The balance of Shi Tigao service lifes realizes the balance between the display effect of writing film and service life.
Further, at least one setting is on the base layer in first conductive layer and the second conductive layer.Basal layer
It can be that conductive layer plays supporting role, improve writing film overall stability.
Further, at least one in first conductive layer and the second conductive layer to be equipped with insulating layer with liquid crystal interlayer.If
The isolation of liquid crystal layer and conductive layer can be better achieved by setting insulating layer, extend writing film service life.
The third object of the present invention be disclose it is a kind of using made of etching technics can be achieved selective erase writing film add
Work technique, which can carry out the first conductive layer or the second conductive layer the separation of conductive region, to realize part
Erasing.To achieve the goals above, the present invention adopts the following technical scheme that：
Method using laser ablation either wet etching either plasma etching is conductive by the first conductive layer or second
Layer one of them be divided into the strip-shaped conductive regions of two or more mutually insulateds；
The conductive region and the overlapped part liquid crystal layer region corresponding with the part of undivided conductive layer are total
With scratching area domain is formed, selective erase is realized.
Alternatively,
Using the method for laser ablation either wet etching or plasma etching, by the first conductive layer and the second conductive layer
It is separated into the strip-shaped conductive region of two or more mutually insulateds respectively；
Conductive region on first conductive layer and the second conductive layer is spatially interlaced, and each conductive region is in space
Erasing region is collectively formed in lap liquid crystal layer region corresponding with the part, realizes selective erase.
The fourth object of the present invention is to disclose a kind of handwriting pad, which includes the book of above-mentioned achievable selective erase
Write film.
Further,
The board further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard
Character simultaneously stores；
Further, the board further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard
Character simultaneously stores；
Handwriting trace information or standard character are sent to outside by communication unit for being communicated with external equipment
Equipment.
The fifth object of the present invention is to disclose a kind of blackboard, which includes the writing of above-mentioned achievable selective erase
Film.
Further,
The blackboard further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard
Character simultaneously stores；
Further, the blackboard further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard
Character simultaneously stores；
Handwriting trace information or standard character are sent to outside by communication unit for being communicated with external equipment
Equipment.
The sixth object of the present invention is to disclose a kind of drawing board, which includes the writing of above-mentioned achievable selective erase
Film.
Further,
The drawing board further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard
Character simultaneously stores；
Further, the drawing board further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard
Character simultaneously stores；
Handwriting trace information or standard character are sent to outside by communication unit for being communicated with external equipment
Equipment.
Can be achieved selective erase writing film compared with prior art, the beneficial effects of the invention are as follows：
Liquid crystal writing film disclosed by the invention forms the conduction of mutually insulated by the way that at least one conductive layer to be split
Region forms erasing electric field by the control to each conductive region voltage, can realize the regional area wiping for written contents
It removes, and other regions are not influenced then by erasing, the deficiency all wiped can only be realized by overcoming traditional technology, improve user's
Working efficiency and usage experience improve the commercial value of liquid crystal writing film and its application apparatus.
The present invention realizes the mutually insulated between each conductive region by etching technics, has at low cost, pollution-free, easy
The advantages such as operation, yields height, etching pattern diversification.
The adaptable field of the present invention includes：Board, luminous energy board, luminous energy liquid crystal handwriting pad, the big liquid crystal of luminous energy
Writing blackboard, luminous energy dust-free writing board, luminous energy Portable blackboard, electronic drawing board, LCD electronic writings plate, electronic handwritten plate, electronics note
Thing notebook, drawing pad, children's handwriting pad, allowing child daubing drawing board, erasing rubber function sketching board, liquid crystal electron drawing boards, colour
Liquid crystal handwriting pad etc..
Description of the drawings
The accompanying drawings which form a part of this application are used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation do not constitute the improper restriction to the application for explaining the application.
Fig. 1 is the writing membrane structure diagram one of the embodiment of the present invention one；
Fig. 2 is the writing membrane structure diagram two of the embodiment of the present invention one；
Fig. 3 is the writing membrane structure diagram of the embodiment of the present invention two；
Fig. 4 is the conductive coating structure schematic diagram that the present invention carries etched line.
Specific implementation mode
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific implementation mode, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or combination thereof.
Embodiment one
The embodiment of the present invention is in order to solve the technology that liquid crystal writing film existing in the prior art can not achieve selective erase
Problem, it is proposed that it is a kind of using the writing film that selective erase can be achieved made of etching technics, including：It arranges successively from top to bottom
The first conductive layer, liquid crystal layer and the second conductive layer；Using lithographic method, in the first conductive layer or the second conductive layer of writing film
The conductive layer is divided into two or two by the etched line that at least one insulation is etched on one of them by the etched line
The strip-shaped conductive region of a above mutually insulated；The lap of the conductive region of first conductive layer and the second conductive layer in space
Erasing region is collectively formed in liquid crystal layer region corresponding with the part.
Preferably, the width of the conductive region is preferably 1mm-15mm.The range can ensure the same of erasing effect
The balance of Shi Tigao service lifes realizes the balance between the display effect of writing film and service life.
When being divided by the first conductive layer of etched line pair, the shape of etched line is unlimited, is formed by conductive region
Shape is determined according to etching wire shaped and arrangement mode.Preferable scheme is that conductive layer ensures each conduction region when being divided
Domain should at least include the part at the conductive layer edge, be attached convenient for each conductive region and external circuit structure.
Fig. 1 gives the one of which embodiment of writing film：First conductive layer, which is divided into four shown in figure, leads
The shape in electric region, each conductive region is irregular, each conductive region contains the first conductive layer edge
A part；Second conductive layer is not divided；The first conductive region, the second conductive region, third conduction region on first conductive layer
Domain and the 4th conductive region distinguish the overlapped part of the second conductive layer and form First partial erasing region, the second selective erase
Region, third selective erase region and the 4th erasing region.
By each conductive region on the first conductive layer by electrode and corresponding conducting wire respectively with voltage application device
Electrical connection, in order to apply voltage for each conductive region.Second conductive layer is passed through into electrode and corresponding conducting wire and voltage
Bringing device is electrically connected, and applies voltage for the second conductive layer.By applying voltage, in each conductive region of the first conductive layer
And second form electric field between conductive layer, and different voltages difference that each erasing region is formed is utilized to realize selective erase.
In view of the processing technology of writing film and the complexity of conductive region lead, the first conductive layer is divided into band
Shape conductive region；Further, each strip-shaped conductive region is mutually parallel.Be conducive to improve processing efficiency, reduce process costs,
Convenient for batch production.
Fig. 2 gives a kind of more preferred embodiment of writing film：First conductive layer, which is divided into three, mutually puts down
Capable strip-shaped conductive region, the second conductive layer are not divided；Conductive region and the second conductive layer on first conductive layer is overlapped
Part formed first erasing region, second erasing region and third wipe region.
Each conductive region on first conductive layer is passed through into electrode and corresponding conducting wire and voltage application device respectively
Electrical connection, in order to apply voltage for each conductive region.Second conductive layer is passed through into electrode and corresponding conducting wire and voltage
Bringing device is electrically connected, in order to apply voltage for the second conductive layer.
For on the first conductive layer each conductive region and the second conductive layer apply voltage respectively, in this way in the first scratching area
Domain, the second erasing region and third erasing region can be respectively formed the superposition of electric field, be formed using in each erasing region
Different electric fields realize selective erases.
The division for only carrying out conductive region in the present embodiment on a conductive layer wherein, is formed by selective erase region
Area is determined by conductive region, it is generally the case that selective erase area is larger, is suitable for large area selective erase equipment.
Embodiment two
The embodiment of the present invention is in order to solve the technology that liquid crystal writing film existing in the prior art can not achieve selective erase
Problem, it is proposed that it is a kind of using the writing film that selective erase can be achieved made of etching technics, including：It arranges successively from top to bottom
The first conductive layer, liquid crystal layer and the second conductive layer；Using lithographic method, in the first conductive layer and the second conductive layer of writing film
The upper etched line for etching at least one insulation respectively is distinguished the first conductive layer and the second conductive layer by the etched line
It is divided into the conductive region of two or more mutually insulateds；Lap of each conductive region in space is corresponding with the part
Liquid crystal layer region be collectively formed erasing region, realize selective erase.
Preferably, the width of the conductive region is preferably 1mm-15mm.The range can ensure the same of erasing effect
The balance of Shi Tigao service lifes realizes the balance between the display effect of writing film and service life.
By each conductive region on the first conductive layer by electrode and corresponding conducting wire respectively with voltage application device
Electrical connection, in order to apply voltage for each conductive region.Each conductive region on second conductive layer is passed through into electrode
And corresponding conducting wire is electrically connected with voltage application device respectively, in order to apply voltage for the second conductive layer.
Apply voltage respectively for each conductive region on the first conductive layer and the second conductive layer, in this way in each erasing region energy
It is enough respectively formed the superposition of electric field, using the different pressure differences formed in each erasing region, realizes selective erase.
When being divided to conductive layer by etched line, the shape of etched line is unlimited, is formed by the shape of conductive region
It is determined according to etching wire shaped and arrangement mode.Preferred scheme is that conductive layer ensures each conductive region when being divided extremely
The part that the conductive layer edge should be included less, is attached convenient for each conductive region and external circuit structure.
As preferred embodiment, as shown in figure 3, the first conductive layer is divided into several transverse conductances in the present embodiment
Second conductive layer is divided into several longitudinal conductive regions by region, and each conductive region is equidistant；On first conductive layer
Conductive region and the second conductive layer on conductive region be spatially mutually perpendicular to staggeredly；Conduction on first conductive layer
Region forms erasing region with the overlapped part of the conductive region on the second conductive layer.
In Fig. 3, by the division to conductive layer, writing film is divided into reticular structure, each grid is a list
Only erasing region；This partitioning scheme is convenient for industrialized batch machining, while can make cut zone according to actual needs
It more minimizes, by the energization to different conductive strips, realizes more accurate selective erase.
Carry out the division of conductive region, the face in the selective erase region of formation in the present embodiment respectively to upper and lower two conductive layer
Product is determined by the interlaced area of conductive region spatially in upper and lower two conductive layer, it is generally the case that selective erase area is smaller,
It is high to wipe precision, especially suitable for the selective erase equipment compared with small area.
Embodiment three
The embodiment of the present invention advanced optimizes the structure of writing film on the basis of embodiment one or embodiment two,
Including：On the base layer by least one setting in the first conductive layer and the second conductive layer.Such as：The setting of first conductive layer exists
In first substrate or the second conductive layer is arranged in the second substrate, alternatively, two conductive layers are arranged on corresponding base.
Alternatively,
Insulating layer is arranged at least one in first conductive layer or the second conductive layer and liquid crystal interlayer.Such as：First
Insulating layer is arranged with liquid crystal interlayer in conductive layer；Alternatively, insulating layer is arranged in the second conductive layer and liquid crystal interlayer；Alternatively, first
The first insulating layer is arranged with liquid crystal interlayer in conductive layer, and second insulating layer is arranged in the second conductive layer and liquid crystal interlayer.
Good supporting role can be played to two conductive layers by increasing basal layer, convenient for writing the monolithic stability of membrane structure.
The mutually insulated of two conductive layers and liquid crystal layer can be better achieved by increasing insulating layer, played certain protection to liquid crystal layer and made
With extension writing film service life.
Example IV
For the embodiment of the present invention in the either embodiment two or on the basis of embodiment three of embodiment one, further disclosing can
The processing technology for realizing the writing film of selective erase, specifically includes：
Using laser ablation either wet etching or plasma etching or those skilled in the art can know its
His lithographic method, forms several etched lines, etched line is complete by adjacent conductive region on the first conductive layer or the second conductive layer
It is complete to disconnect two conductive regions for forming mutually insulated.
Due to the advantages such as laser etching process is at low cost, pollution-free, easy to operate, yields is high, etching pattern is diversified, therefore
The preferred laser ablation scheme of liquid crystal film of internal field's erasing, i.e., carry out laser ablation on the conductive layer of PET film base material, lead
Electric layer material is generally ITO, nano silver, conducting polymer etc., and sheet resistance resistance value is in 1000 Ω and hereinafter, sheet resistance resistance value is smaller more
It is suitble to etching to make more large-sized liquid crystal writing film with selective erase function.
Since the flexibility of laser ablation is higher, etching pattern can be arbitrary, and simplest etching pattern is just
It is strip etching conductive region, etched line is etched by laser ablation equipment between adjacent two conductive regions, it will be adjacent
Two conductive region mutually insulateds, and so on, equidistant etching conductive region is etched, as shown in Figure 4.
It is easy to roll-to-roll etching production and the production of selective erase liquid crystal film, one layer preferably wherein of the present embodiment to realize
Film base material etching conductive region is lateral etching, and another tunic base material etching conductive region is longitudinal etching, and subsequent production has
When selective erase liquid crystal film, the etching conductive region intersecting vertical of this two layers of film base material is used.It the line width of etched line and leads
Electric peak width can be adjusted according to product electric stability design requirement and selective erase pixel required precision.
The width of conductive region is preferably 1mm-15mm.The range can improve while ensureing to wipe effect and use the longevity
The balance of life realizes the balance between the display effect of writing film and service life.
The width of etched line is generally no greater than 1mm, and the preferred scope The present invention gives etching line width is：10 μm~
200μm.The setting of etched line line width has very important influence, etched line too wide the writing of writing film and display effect
It is not clean to be easy to cause erasing, influences display effect；Etched line is too carefully higher to the required precision of production technology, is unfavorable for industrial life
Production.
Embodiment five
The embodiment of the present invention is public in the either embodiment two or on the basis of embodiment three or example IV of embodiment one
The concrete application product of the writing film of achievable selective erase has been opened, such as：
By being applied on board using the writing film that selective erase can be achieved made of etching technics for the present invention, realize
The selective erase function of board.
Further, the existing liquid crystal board remembered is incuded for example, when writing by resistance type touch control screen
Pressure calculates pressure position, feeds back simultaneously pen trace track, realizes the storage of handwriting trace；Alternatively, converting handwriting trace to
Standard character is stored.
The present invention is applied to above-mentioned remember using the writing film that selective erase can be achieved made of etching technics
Liquid crystal board realizes the function of selective erase.
Further, communication unit is set on the above-mentioned board that there is selective erase function simultaneously with memory function
Member is communicated by way of wired or wireless communication with external equipment.
External equipment can be the mobile terminals such as mobile phone, PAD, and can also be PC machine or those skilled in the art can think
The other equipment terminal arrived.
Similarly, of the invention that it can also be applied to using the writing film that selective erase can be achieved made of etching technics
The blackboard that he can remember can either be sent out on drawing board and by communication unit the handwriting trace information or standard character of storage
It send to external equipment.
Alternatively embodiment, by the present invention using the writing that selective erase can be achieved made of etching technics
It is portable that film is applied to luminous energy board, luminous energy liquid crystal handwriting pad, the big liquid crystal writing blackboard of luminous energy, luminous energy dust-free writing board, luminous energy
Blackboard, electronic drawing board, LCD electronic writings plate, electronic handwritten plate, electronic recording notebook, drawing pad, children's handwriting pad, children
Scribble drawing board, erasing rubber function sketching board, liquid crystal electron drawing boards either color liquid crystal handwriting pad or those skilled in the art
In other Related products that can be known, to realize the selective erase function of the said goods.
The foregoing is merely the preferred embodiments of the application, are not intended to limit this application, for the skill of this field
For art personnel, the application can have various modifications and variations.Within the spirit and principles of this application, any made by repair
Change, equivalent replacement, improvement etc., should be included within the protection domain of the application.
Claims (17)
1. a kind of using the writing film that selective erase can be achieved made of etching technics, which is characterized in that including：
The first conductive layer, liquid crystal layer and the second conductive layer arranged successively；
Using lithographic method, at least one insulation is etched on one of them in the first conductive layer of writing film or the second conductive layer
The conductive layer is divided into the strip-shaped conductive area of two or more mutually insulateds by the etched line by etched line
Domain；
The part that the conductive region, exhausted liquid crystal layer and undivided conductive layer are overlapped jointly is erasable region.
2. as described in claim 1 a kind of using the writing film that selective erase can be achieved made of etching technics, feature exists
In each strip-shaped conductive region is mutually parallel.
3. as described in claim 1 a kind of using the writing film that selective erase can be achieved made of etching technics, feature exists
In each conductive region should at least include the part at its said conductive layer edge.
4. as described in claim 1 a kind of using the writing film that selective erase can be achieved made of etching technics, feature exists
In the line width of the etched line is not more than 1mm；
Preferably, the line width of the etched line is between 10 μm~200 μm.
5. as described in claim 1 a kind of using the writing film that selective erase can be achieved made of etching technics, feature exists
In the of same size of, each conductive region；
Preferably, the width of each conductive region is 1mm-15mm.
6. a kind of using the writing film that selective erase can be achieved made of etching technics, which is characterized in that including：
The first conductive layer, liquid crystal layer and the second conductive layer arranged successively；
Using lithographic method, at least one insulation is etched respectively on the first conductive layer and the second conductive layer of writing film
First conductive layer and the second conductive layer are divided into two or more mutually insulateds by etched line respectively by the etched line
Conductive region；
Lap with the part corresponding liquid crystal layer of the conductive region of first conductive layer and the second conductive layer in space
Erasing region is collectively formed in region；
Each conductive region of first conductive layer is distributed along first direction, is mutually parallel；Each conduction of second conductive layer
Region is distributed in a second direction, is mutually parallel, and first direction and second direction are spatially interlaced.
7. as claimed in claim 6 a kind of using the writing film that selective erase can be achieved made of etching technics, feature exists
In the first direction is vertical with second direction.
8. as claimed in claim 6 a kind of using the writing film that selective erase can be achieved made of etching technics, feature exists
In the line width of the etched line is not more than 1mm；
Preferably, the line width of the etched line is between 10 μm~200 μm.
9. as claimed in claim 6 a kind of using the writing film that selective erase can be achieved made of etching technics, feature exists
In each conductive region of first conductive layer should at least include the part at first conductive layer edge；Described second leads
Each conductive region of electric layer should at least include the part at second conductive layer edge.
10. as claimed in claim 6 a kind of using the writing film that selective erase can be achieved made of etching technics, feature exists
In the of same size of, conductive region on first conductive layer；Conductive region on second conductive layer it is of same size；
Preferably, the width of the conductive region is 1mm-15mm.
11. a kind of writing film using achievable selective erase made of etching technics as described in claim 1 or 6,
It is characterized in that, first conductive layer or the setting of the second conductive layer are on the base layer；
Alternatively,
First conductive layer is arranged on the first basal layer, and the second conductive layer is arranged on the second basal layer.
12. a kind of writing film using achievable selective erase made of etching technics as described in claim 1 or 6,
It is characterized in that, it is at least one in first conductive layer and the second conductive layer to be equipped with insulating layer with liquid crystal interlayer.
13. a kind of processing work as described in claim 1 using the writing film that selective erase can be achieved made of etching technics
Skill, which is characterized in that including：
Using laser ablation either wet etching either plasma etching method by the first conductive layer or the second conductive layer its
In a strip-shaped conductive region for being divided into two or more mutually insulateds；
The conductive region and the overlapped part common shape of liquid crystal layer region corresponding with the part of undivided conductive layer
At erasing region, selective erase is realized.
14. a kind of processing work as claimed in claim 6 using the writing film that selective erase can be achieved made of etching technics
Skill, which is characterized in that including：Using the method for laser ablation either wet etching or plasma etching, by the first conductive layer
It is separated into the strip-shaped conductive region of two or more mutually insulateds respectively with the second conductive layer；
Conductive region on first conductive layer and the second conductive layer is spatially interlaced, overlapping of each conductive region in space
Erasing region is collectively formed in part liquid crystal layer region corresponding with the part, realizes selective erase.
15. a kind of board, which is characterized in that can realize the writing of selective erase including claim 1-10 any one of them
Film；
Further,
The board further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard character
And it stores；
Further, the board further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard character
And it stores；
Handwriting trace information or standard character are sent to external equipment by communication unit for being communicated with external equipment.
16. a kind of blackboard, which is characterized in that can realize the writing of selective erase including claim 1-10 any one of them
Film；
Further,
The blackboard further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard character
And it stores；
Further, the blackboard further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard character
And it stores；
Handwriting trace information or standard character are sent to external equipment by communication unit for being communicated with external equipment.
17. a kind of drawing board, which is characterized in that can realize the writing of selective erase including claim 1-10 any one of them
Film；
Further,
The drawing board further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard character
And it stores；
Further, the drawing board further includes：
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting handwriting trace to standard character
And it stores；
Handwriting trace information or standard character are sent to external equipment by communication unit for being communicated with external equipment.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810541991.2A CN108549169A (en) | 2018-05-30 | 2018-05-30 | Using writing film and processing technology that selective erase can be achieved made of etching technics and application |
| CA3057909A CA3057909C (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| KR1020197034181A KR102328206B1 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film with partial erasure, partial erasure method, multiple voltage output circuit and positioning system |
| PCT/CN2019/071227 WO2019227942A1 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film capable of implementing local erasure, local erasure method, multi-voltage output circuit, and positioning system |
| AU2019236746A AU2019236746B2 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| US16/492,689 US11137899B2 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| EP19786258.4A EP3605213A4 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film capable of implementing local erasure, local erasure method, multi-voltage output circuit, and positioning system |
| JP2019564923A JP7130676B2 (en) | 2018-05-30 | 2019-01-10 | Partially erasable liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810541991.2A CN108549169A (en) | 2018-05-30 | 2018-05-30 | Using writing film and processing technology that selective erase can be achieved made of etching technics and application |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108549169A true CN108549169A (en) | 2018-09-18 |
Family
ID=63511451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810541991.2A Pending CN108549169A (en) | 2018-05-30 | 2018-05-30 | Using writing film and processing technology that selective erase can be achieved made of etching technics and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108549169A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109613735A (en) * | 2019-01-31 | 2019-04-12 | 深圳中电数码显示有限公司 | It is a kind of can selective erase liquid crystal blackboard |
| CN110147006A (en) * | 2018-11-30 | 2019-08-20 | 山东蓝贝思特教装集团股份有限公司 | Realize voltage application system, method, liquid crystal writing film, board, blackboard and the drawing board of liquid crystal writing plate selective erase |
| WO2019227942A1 (en) * | 2018-05-30 | 2019-12-05 | 山东蓝贝思特教装集团股份有限公司 | Liquid crystal writing film capable of implementing local erasure, local erasure method, multi-voltage output circuit, and positioning system |
| CN114585992A (en) * | 2020-09-29 | 2022-06-03 | 京东方科技集团股份有限公司 | Writing track processing method, touch control equipment, writing system and storage medium |
| CN114755853A (en) * | 2022-04-26 | 2022-07-15 | 义乌市百变电子科技有限公司 | Local erasing method for liquid crystal handwriting board applying virtual keyboard |
| CN115268146A (en) * | 2022-07-06 | 2022-11-01 | 山东蓝贝思特教装集团股份有限公司 | Bistable liquid crystal writing device based on high-temperature-resistant hard substrate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1423717A (en) * | 1972-05-10 | 1976-02-04 | Olivetti & Co Spa | Liquid crystal display system |
| CN105467708A (en) * | 2016-02-03 | 2016-04-06 | 京东方科技集团股份有限公司 | Writing board, electronic writing equipment and manufacturing method |
| CN106646977A (en) * | 2017-01-13 | 2017-05-10 | 深圳市好写科技有限公司 | Local-erasing liquid-crystal display device |
| CN107820582A (en) * | 2015-04-28 | 2018-03-20 | 唯酷有限公司 | Liquid crystal writing equipment |
| CN208351191U (en) * | 2018-05-30 | 2019-01-08 | 山东蓝贝思特教装集团股份有限公司 | Using writing film, board, blackboard and the drawing board that selective erase can be achieved made of etching technics |
-
2018
- 2018-05-30 CN CN201810541991.2A patent/CN108549169A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1423717A (en) * | 1972-05-10 | 1976-02-04 | Olivetti & Co Spa | Liquid crystal display system |
| CN107820582A (en) * | 2015-04-28 | 2018-03-20 | 唯酷有限公司 | Liquid crystal writing equipment |
| CN105467708A (en) * | 2016-02-03 | 2016-04-06 | 京东方科技集团股份有限公司 | Writing board, electronic writing equipment and manufacturing method |
| CN106646977A (en) * | 2017-01-13 | 2017-05-10 | 深圳市好写科技有限公司 | Local-erasing liquid-crystal display device |
| CN208351191U (en) * | 2018-05-30 | 2019-01-08 | 山东蓝贝思特教装集团股份有限公司 | Using writing film, board, blackboard and the drawing board that selective erase can be achieved made of etching technics |
| CN209070267U (en) * | 2018-05-30 | 2019-07-05 | 山东蓝贝思特教装集团股份有限公司 | Using etching technics can selective erase writing film, board, blackboard and drawing board |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019227942A1 (en) * | 2018-05-30 | 2019-12-05 | 山东蓝贝思特教装集团股份有限公司 | Liquid crystal writing film capable of implementing local erasure, local erasure method, multi-voltage output circuit, and positioning system |
| US11137899B2 (en) | 2018-05-30 | 2021-10-05 | Shandong Lanbeisite Educational Equipment Group | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| CN110147006A (en) * | 2018-11-30 | 2019-08-20 | 山东蓝贝思特教装集团股份有限公司 | Realize voltage application system, method, liquid crystal writing film, board, blackboard and the drawing board of liquid crystal writing plate selective erase |
| CN109613735A (en) * | 2019-01-31 | 2019-04-12 | 深圳中电数码显示有限公司 | It is a kind of can selective erase liquid crystal blackboard |
| CN114585992A (en) * | 2020-09-29 | 2022-06-03 | 京东方科技集团股份有限公司 | Writing track processing method, touch control equipment, writing system and storage medium |
| CN114585992B (en) * | 2020-09-29 | 2024-06-11 | 京东方科技集团股份有限公司 | Writing track processing method, touch control equipment, writing system and storage medium |
| CN114755853A (en) * | 2022-04-26 | 2022-07-15 | 义乌市百变电子科技有限公司 | Local erasing method for liquid crystal handwriting board applying virtual keyboard |
| CN115268146A (en) * | 2022-07-06 | 2022-11-01 | 山东蓝贝思特教装集团股份有限公司 | Bistable liquid crystal writing device based on high-temperature-resistant hard substrate |
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Application publication date: 20180918 |