CN110147006A - Realize voltage application system, method, liquid crystal writing film, board, blackboard and the drawing board of liquid crystal writing plate selective erase - Google Patents
Realize voltage application system, method, liquid crystal writing film, board, blackboard and the drawing board of liquid crystal writing plate selective erase Download PDFInfo
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- CN110147006A CN110147006A CN201811455640.6A CN201811455640A CN110147006A CN 110147006 A CN110147006 A CN 110147006A CN 201811455640 A CN201811455640 A CN 201811455640A CN 110147006 A CN110147006 A CN 110147006A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
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Abstract
The invention discloses a kind of voltage application system for realizing liquid crystal writing plate selective erase, method, liquid crystal writing film, board, blackboard and drawing boards, liquid crystal layer is located between two conductive layers, and two conductive layers are divided into two or more conduction regions respectively；Its process are as follows: first voltage is applied to the conduction region of first conductive layer in covering selective erase region；No-voltage is applied to the conduction region of second conductive layer in covering selective erase region；Remaining conduction region is in high-impedance state；After setting time, no-voltage is applied to the conduction region of first conductive layer in covering selective erase region；First voltage is applied to the conduction region of second conductive layer in covering selective erase region；Remaining conduction region is in high-impedance state.The invention has the advantages that: only needing to provide erasing voltage when the erasing of the present invention program monolithic region, three kinds of output forms of no-voltage and high-impedance state substantially reduce the complexity of voltage follower circuit.Erasing while can be realized two pieces of regions being diagonally connected, solves the problems, such as the quick erasing of oblique line directions.
Description
Technical field
The present invention relates to liquid crystal writing plate technique fields, more particularly to a kind of electricity for realizing liquid crystal writing plate selective erase
Press application system, method, liquid crystal writing film, board, blackboard and drawing board.
Background technique
Liquid crystal writing plate on the market at present, its working principle is that using the bistable characteristic of liquid crystal realize display and/or
Wipe the written contents on liquid crystal board.Such as using cholesteric liquid crystal as writing film, by acting on liquid crystal board
Pressure record the writing pressure trajectories of lettering pen, and then show corresponding written contents；Make cholesteric phase by applying electric field
Liquid crystal structure changes, and so that the writing pressure trajectories on liquid crystal board is disappeared to realize erasing.
Conductive layer is divided into several conductive regions by clipboard selective erase voltage control method disclosed in the prior art,
By applying different voltage for each conductive region, to achieve the purpose that selective erase；This kind of mode is intended in addition to needing
Conductive region where wiping region applies outside erasing voltage or no-voltage, it is also necessary to by means of one even more than boost voltage
Realize selective erase, each conductive region requires to apply voltage, substantially increase clipboard production and use at
This, meanwhile, needing to postpone the regular hour after erasing can write again.
In such a way that above-mentioned increase boost voltage is wiped, the writing that may will affect neighboring area is shown, also,
Erasing while cannot achieve diagonal adjacent two pieces of regions.
Summary of the invention
The purpose of the disclosure is exactly to solve the above-mentioned problems, to propose a kind of electricity for realizing liquid crystal writing plate selective erase
Application system, method, liquid crystal writing film, board, blackboard and drawing board are pressed, can not only realize the selective erase in single region,
Erasing while can also realizing diagonal adjacent two regional areas, and the writing for not influencing neighboring area is shown.
To achieve the goals above, the present invention adopts the following technical scheme:
A kind of voltage application system for realizing liquid crystal writing plate selective erase disclosed in one or more embodiments,
It include: liquid crystal writing film, the liquid crystal writing film includes the first conductive layer, the second conductive layer and is located between two conductive layers
Liquid crystal layer；Two conductive layers are divided into two or more conduction regions respectively；To the of covering selective erase region
The conduction region of one conductive layer applies first voltage；Second electricity is applied to the conduction region of second conductive layer in covering selective erase region
Pressure；Remaining conduction region is in high-impedance state；First voltage and second voltage are formed two conduction region space overlap positions wipes electricity
, realize selective erase.
Further, the conduction region connects multivoltage output circuit, and the multivoltage output circuit can be as needed
Apply first voltage, second voltage or high-impedance state for conduction region.
Further, the first voltage is at least more than voltage required for capable of wiping completely written handwriting, institute
Stating second voltage is no-voltage.
First voltage is applied to the conduction region of first conductive layer in covering selective erase region；To covering selective erase region
The second conductive layer conduction region apply no-voltage；Remaining conduction region is in high-impedance state；
After setting time, no-voltage is applied to the conduction region of first conductive layer in covering selective erase region；To covering office
The conduction region that second conductive layer in region is wiped in portion applies first voltage；Remaining conduction region is in high-impedance state.
First voltage and no-voltage are formed two conduction region space overlap positions wipes electric field, realizes selective erase.Phase
It only include: first voltage, no-voltage and three kinds of high resistant than in existing selective erase voltage application method, applying alive state
State is not necessarily to boost voltage, save the cost；It does not need to apply voltage for each conductive region, improves application erasing voltage
Delay phenomenon is write caused by afterwards；The writing that will not influence neighboring area simultaneously is shown.
A kind of voltage application method for realizing liquid crystal writing plate selective erase disclosed in one or more embodiments,
Liquid crystal layer is located between two conductive layers, and two conductive layers are divided into two or more conduction regions respectively；Its feature
It is, its process are as follows:
First voltage is applied to the conduction region of first conductive layer in covering selective erase region；To covering selective erase region
The second conductive layer conduction region apply second voltage；Remaining conduction region is in high-impedance state；First voltage and second voltage are two
A conduction region space overlap position forms erasing electric field, realizes selective erase.
A kind of voltage application system for realizing liquid crystal writing plate selective erase disclosed in one or more embodiments,
It include: liquid crystal writing film, the liquid crystal writing film includes two conductive layers and the liquid crystal layer between two conductive layers；Two
A conductive layer is divided into two or more conduction regions respectively；To first conductive layer in covering first partial erasing region
Conduction region apply first voltage；Second voltage is applied to the conduction region of second conductive layer in covering first partial erasing region；
Second voltage is applied to the conduction region of first conductive layer in the local scratching area of covering second domain；To the local scratching area of covering second domain
The second conductive layer conduction region apply first voltage；Remaining conduction region is in high-impedance state；First partial erasing region and
Second local scratching area domain is diagonally adjacent；
The conduction region space overlap position of first voltage and second voltage on two conductive layers forms erasing electric field, realizes
The selective erase of diagonal adjacent area.
Further, the conduction region connects multivoltage output circuit, and the multivoltage output circuit can be as needed
Apply first voltage, second voltage or high-impedance state for conduction region.
Further, the first voltage is at least more than voltage required for capable of wiping completely written handwriting, institute
Stating second voltage is no-voltage.
First voltage is applied to the conduction region of first conductive layer in covering first partial erasing region；To covering first partial
The conduction region for wiping second conductive layer in region applies no-voltage；To leading for the first conductive layer for covering the second local scratching area domain
Electric area applies no-voltage；First voltage is applied to the conduction region of second conductive layer in the local scratching area of covering second domain；Remaining is led
Electric area is in high-impedance state；The first partial erasing region and the second local scratching area domain are diagonally adjacent；
After setting time, no-voltage is applied to the conduction region of first conductive layer in covering first partial erasing region；To covering
The conduction region that lid first partial wipes second conductive layer in region applies first voltage；To the of the local scratching area domain of covering second
The conduction region of one conductive layer applies first voltage；Zero is applied to the conduction region of second conductive layer in the local scratching area of covering second domain
Voltage；Remaining conduction region is in high-impedance state.
First voltage and no-voltage are formed two conduction region space overlap positions wipes electric field, realizes selective erase.On
The erasing while method of stating can be realized diagonal adjacent two regions solves asking of can not directly wiping in oblique line directions
Topic.
A kind of voltage application method for realizing liquid crystal writing plate selective erase disclosed in one or more embodiments,
Liquid crystal writing film is located between two conductive layers, and two conductive layers are divided into two or more conduction regions respectively；It
Process are as follows:
First voltage is applied to the conduction region of first conductive layer in covering first partial erasing region；To covering first partial
The conduction region for wiping second conductive layer in region applies second voltage；To the first conductive layer for covering the second local scratching area domain
Conduction region applies second voltage；First voltage is applied to the conduction region of second conductive layer in the local scratching area of covering second domain；Its
Remaining conduction region is in high-impedance state；The first partial erasing region and the second local scratching area domain are diagonally adjacent；
The conduction region space overlap position of first voltage and second voltage on two conductive layers forms erasing electric field, realizes
The selective erase of diagonal adjacent area.
A kind of liquid crystal writing film disclosed in one or more embodiments, using above-mentioned realization liquid crystal writing plate office
The voltage application method of portion's erasing, realizes the selective erase of liquid crystal writing film；
The liquid crystal writing film includes: the first conductive layer, the second conductive layer and the liquid crystal between two conductive layers
Layer；First conductive layer and the second conductive layer are divided into the conductive region of two or more mutually insulateds respectively；
Each conductive region of first conductive layer is distributed along first direction, each conductive region edge of second conductive layer
Second direction distribution, first direction and second direction are spatially interlaced；First conductive layer and the second conductive layer
Erasable region is collectively formed in lap of the conductive region in space liquid crystal layer region corresponding with the part.
In view of processing cost and the complexity of technique, conductive layer is divided into strip-shaped conductive region, had by the present invention
Conducive to processing efficiency is improved, process costs are reduced, convenient for batch production.
A kind of board disclosed in one or more embodiments, including above-mentioned liquid crystal writing film；
Further, further includes:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
Further, the board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character of storage or
Test pattern is sent to external equipment.
A kind of blackboard disclosed in one or more embodiments, including above-mentioned liquid crystal writing film；
Further, further includes:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
Further, the blackboard further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character of storage or
Test pattern is sent to external equipment.
A kind of drawing board disclosed in one or more embodiments, including above-mentioned liquid crystal writing film.
Further, further includes:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
Further, the drawing board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard for handwriting trace
Character or test pattern simultaneously store；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character of storage or
Test pattern is sent to external equipment.
Compared with prior art, the beneficial effects of the present invention are:
Compared to existing technical solution, the present invention program monolithic region only needs to provide erasing voltage, zero electricity when wiping
The three kinds of form outputs of pressure and high-impedance state, substantially reduce the complexity of voltage follower circuit.
Erasing while can be realized two pieces of regions being diagonally connected, solves the problems, such as the quick erasing of oblique line directions.
Conductive region only where scratching area provides voltage, remaining except the conductive region where erasing region is conductive
High-impedance state is presented in region, can not provide charging and discharging currents；Compared with by the way of boost voltage realization selective erase, this
The writing that inventive method will not influence neighboring area is shown.
The writing delay phenomenon after erasure completion is significantly improved, the user experience is improved spends.
The adaptable field of this programme includes: board, luminous energy board, luminous energy liquid crystal handwriting pad, the big liquid crystal of luminous energy
Writing blackboard, luminous energy dust-free writing board, luminous energy Portable blackboard, electronic drawing board, lcd electronic writing plate, electronic handwritten plate, electronics note
Thing notebook, drawing pad, children's handwriting pad, allowing child daubing drawing board, erasing rubber function sketching board, liquid crystal electron drawing boards, colour
Liquid crystal handwriting pad etc..
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.
Fig. 1 is that each conduction region first half application voltage of liquid crystal writing film realizes erasing schematic diagram in embodiment one；
Fig. 2 is that each conduction region second half court of liquid crystal writing film applies voltage realization erasing schematic diagram in embodiment one；
Fig. 3 is that each conduction region first half application voltage of liquid crystal writing film realizes erasing schematic diagram in embodiment three；
Fig. 4 is that each conduction region second half court of liquid crystal writing film applies voltage realization erasing schematic diagram in embodiment three；
Fig. 5 is liquid crystal writing membrane structure diagram in embodiment five.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
Embodiment one
Present embodiment discloses a kind of voltage application methods for realizing liquid crystal writing plate selective erase, wherein liquid crystal writing
Film includes two conductive layers and the liquid crystal layer that is arranged between two conductive layers；Two conductive layers be divided into respectively two or
More than two conduction regions；
First voltage is applied to the conduction region of first conductive layer in covering selective erase region；To covering selective erase region
The second conductive layer conduction region apply no-voltage；Remaining conduction region is in high-impedance state；
First voltage and no-voltage are formed two conduction region space overlap positions wipes electric field；Wherein, first voltage is
At least more than voltage required for capable of wiping completely written handwriting, in present embodiment, first voltage takes erasing voltage.
After setting time (about 10MS to 200MS), the voltage applied on two conductive layers is exchanged, it may be assumed that is wiped covering part
Except the conduction region of first conductive layer in region applies no-voltage；The conduction region of second conductive layer in covering selective erase region is applied
Add first voltage；Remaining conduction region is in high-impedance state, continues setting time (about 10MS to 200MS).
After voltage exchanges, it is identical but contrary to be formed by electric field level on entire liquid crystal writing film, can keep away in this way
Exempt to apply liquid crystal writing film for a long time the generation of liquid crystal polarization phenomenon caused by the electric field in the same direction.This patent
Kind, two different periods of direction of an electric field are referred to as first half and second half court by us.
It repeats the above process, after recycling several times, using first voltage and no-voltage in two conduction region space overlaps
The erasing electric field that position is formed realizes selective erase.
To conduction region each on liquid crystal writing film apply voltage as shown in Fig. 1 or Fig. 2.Wherein, Fig. 1 is liquid crystal writing film
The voltage that each conduction region first half applies, Fig. 2 are the voltage that each conduction region second half court of liquid crystal writing film applies；First half and later half
The sequence of field service voltage can be interchanged.
It is illustrated by taking Fig. 1 as an example below.
In Fig. 1, HIZ indicates high resistant, and HIGH expression connects erasing voltage, and GND expression connects no-voltage；BLOCK expression is intended to wipe
Region.Wherein, erasing voltage is voltage required for referring to completely wipe written handwriting.
Assuming that the first conductive layer is divided into horizontally-parallel several conductive regions, the second conductive layer is divided into vertical flat
Capable several conductive regions；
Apply no-voltage for the conductive region on the first conductive layer where region BLOCK to be wiped, for region to be wiped
Conductive region on the second conductive layer where BLOCK applies erasing voltage；High-impedance state is presented in remaining conductive region；Though at this point,
Row or column where right region BLOCK to be wiped can generate induced voltage, but column on another conductive layer on the other side or
Row is in high-impedance state, and therefore, the neighboring area in region to be wiped can not provide charging and discharging currents, not will form electric field.
At this point, being formed by electric field satisfaction on entire liquid crystal writing film: the electric field in region to be wiped is erasing voltage
HIGH；And remaining erasing region does not have electric field to be formed.Then, the writing of region BLOCK only to be wiped is wiped free of, and remaining area
The writing in domain is unaffected.
Likewise, it is also such that the voltage of second half court shown in Fig. 2, which applies principle,.
It should be noted that region BLOCK to be wiped can be the selective erase region of minimum unit, it is also possible to multiple offices
The square region that portion erasing region is composed.
Each conductive region of liquid crystal writing film passes through electrode and corresponding conducting wire connection multivoltage output circuit；
Multivoltage output circuit can provide the voltage of three kinds of voltage forms: erasing voltage, zero as needed for each conductive region
Voltage and high-impedance state (disconnecting).
The voltage application method of the realization liquid crystal writing plate selective erase of present embodiment, it is only necessary to which three kinds of states are provided
Voltage form can be realized, and greatly reduce the complexity of circuit, save the cost；Writing after improving selective erase simultaneously is prolonged
Slow phenomenon.
Embodiment two
Present embodiment discloses a kind of voltage application systems for realizing liquid crystal writing plate selective erase, comprising: liquid crystal writing
Film, liquid crystal writing film include the first conductive layer, the second conductive layer and the liquid crystal layer between two conductive layers；Two conductions
Layer is divided into two or more conduction regions respectively；The conduction region of first conductive layer in covering selective erase region is applied
Add first voltage；No-voltage is applied to the conduction region of second conductive layer in covering selective erase region；Remaining conduction region is in height
Resistance state；
After setting time (about 10MS to 200MS), the voltage applied on two conductive layers is exchanged, it may be assumed that is wiped covering part
Except the conduction region of first conductive layer in region applies no-voltage；The conduction region of second conductive layer in covering selective erase region is applied
Add first voltage；Remaining conduction region is in high-impedance state, continues setting time (about 10MS to 200MS).
It repeats the above process, after recycling several times, using first voltage and no-voltage in two conduction region space overlaps
The erasing electric field that position is formed realizes selective erase.
Each conduction region is all connected with multivoltage output circuit, and multivoltage output circuit can be applied as needed for conduction region
Add first voltage, no-voltage or high-impedance state.
In some embodiments, the structure type of multivoltage output circuit includes: main controller and booster circuit, wherein
Main controller generates control signal；Booster circuit generates corresponding erasing voltage or zero electricity according to the control signal that main controller generates
Press or disconnect the connection with conductive region, wherein can control whether to disconnect and conduction by the conducting of control switch pipe
The connection in region.
First voltage be at least more than written handwriting can wipe to required voltage completely, in present embodiment, the
One voltage takes erasing voltage.
Embodiment three
Based on the selective erase voltage application method of region BLOCK to be wiped for monolithic in embodiment one, this embodiment party
Formula discloses a kind of selective erase voltage application method for capableing of simultaneously erased diagonal two pieces of adjacent regions.
The structure of liquid crystal writing film is identical with embodiment one, it is assumed that first partial region BLOCK1 to be wiped and second game
Portion region BLOCK2 to be wiped is diagonally adjacent；To conduction region each on liquid crystal writing film apply voltage as shown in Fig. 3 or Fig. 4.
Wherein, Fig. 3 is the voltage applied liquid crystal writing film each conduction region first half, and Fig. 4 is that each conduction region second half court of liquid crystal writing film is applied
The voltage added；The sequence of first half and second half court service voltage can be interchanged.
It is illustrated by taking Fig. 3 as an example below.
In Fig. 3, HIZ indicates high resistant, and HIGH expression connects erasing voltage, and GND expression connects no-voltage；BLOCK1 indicates first game
Portion region to be wiped, BLOCK2 indicate first partial region to be wiped.Wherein, erasing voltage be refer to written handwriting is complete
Voltage required for wiping.
Assuming that the first conductive layer is divided into horizontally-parallel several conductive regions, the second conductive layer is divided into vertical flat
Capable several conductive regions；
No-voltage is applied to the conduction region of the first conductive layer of covering first partial erasing region BLOCK1；To covering first
The conduction region of the second conductive layer of selective erase region BLOCK1 applies erasing voltage；To the local scratching area of covering second domain
The conduction region of the first conductive layer of BLOCK2 applies erasing voltage；The second of scratching area domain BLOCK2 local to covering second is conductive
The conduction region of layer applies no-voltage；Remaining conduction region is in high-impedance state；
Although at this point, the row or column where region to be wiped can generate induced voltage, another conduction on the other side
Column or row on layer are in high-impedance state, and therefore, the neighboring area in region to be wiped can not provide charging and discharging currents, not will form
Electric field.
At this point, being formed by electric field satisfaction on entire liquid crystal writing film: the electric field in first partial region to be wiped is
HIGH；The electric field of second part region to be wiped is-HIGH；And remaining erasing region does not have electric field to be formed.Then, only first
The writing of the local scratching area domain BLOCK2 of part region BLOCK1 to be wiped and second is wiped free of, and the writing in remaining region will not
It is affected.
After setting time (about 10MS to 200MS), the voltage applied on two conductive layers is exchanged, into after shown in Fig. 4
Half-court voltage applying mode, it may be assumed that erasing is applied to the conduction region of the first conductive layer of covering first partial erasing region BLOCK1
Voltage；No-voltage is applied to the conduction region of the second conductive layer of covering first partial erasing region BLOCK1；To covering second game
The conduction region that the first conductive layer of region BLOCK2 is wiped in portion applies no-voltage；Scratching area domain BLOCK2's local to covering second
The conduction region of second conductive layer applies erasing voltage；Remaining conduction region is in high-impedance state；
It repeats the above process, after recycling several times, using erasing voltage and no-voltage in two conduction region space overlaps
The erasing electric field that position is formed realizes the erasing in first partial erasing region and the second local scratching area domain.
The voltage application method of the realization liquid crystal writing plate selective erase of present embodiment, it is only necessary to which three kinds of states are provided
Voltage form can be realized, and greatly reduce the complexity of circuit, save the cost, the writing delay after improving selective erase is now
As；Meanwhile, it is capable to which erasing while realizing diagonally connected two pieces of conductive regions, solves the problems, such as the quick erasing of oblique line directions.
Example IV
Present embodiment discloses a kind of voltage application systems for realizing liquid crystal writing plate selective erase, comprising: liquid crystal writing
Film, liquid crystal writing film include two conductive layers and the liquid crystal layer between two conductive layers；Two conductive layers are divided respectively
It is segmented into two or more conduction regions；First is applied to the conduction region of first conductive layer in covering first partial erasing region
Voltage；No-voltage is applied to the conduction region of second conductive layer in covering first partial erasing region；To covering the second selective erase
The conduction region of first conductive layer in region applies no-voltage；To the conduction region of second conductive layer in the local scratching area of covering second domain
Apply first voltage；Remaining conduction region is in high-impedance state；The first partial erasing region and the second local scratching area domain are diagonal
It is adjacent；Wherein, first voltage be at least more than written handwriting can wipe to required voltage completely, in present embodiment,
First voltage takes erasing voltage.
After setting time (about 10MS to 200MS), the voltage applied on two conductive layers is exchanged, it may be assumed that covering first game
The conduction region that the first conductive layer of region BLOCK1 is wiped in portion applies erasing voltage；Region BLOCK1 is wiped to covering first partial
The second conductive layer conduction region apply no-voltage；The conduction of the first conductive layer of scratching area domain BLOCK2 local to covering second
Area applies no-voltage；The conduction region of the second conductive layer of scratching area domain BLOCK2 local to covering second applies erasing voltage；Its
Remaining conduction region is in high-impedance state；
The conduction region space overlap position of erasing voltage and no-voltage on two conductive layers forms erasing electric field, realization pair
The selective erase of angle adjacent area.
Conduction region connects multivoltage output circuit, and multivoltage output circuit can apply erasing electricity as needed for conduction region
Pressure, no-voltage or high-impedance state.In some embodiments, the structure type of multivoltage output circuit includes: main controller and liter
Volt circuit, wherein main controller generates control signal；Booster circuit generates corresponding erasing according to the control signal that main controller generates
The connection of voltage or no-voltage or disconnection and conductive region, wherein can be to control by the conducting of control switch pipe
The connection of no disconnection and conductive region.
Embodiment five
Present embodiment discloses a kind of using realization liquid crystal writing plate office on the basis of embodiment one and embodiment three
The liquid crystal writing film of the voltage application method of portion's erasing, as shown in Figure 5, comprising: the first conductive layer for successively arranging from top to bottom,
Liquid crystal layer and the second conductive layer；
Wherein, the first conductive layer is divided into the transverse conductance region of two or more mutually insulateds, and second is led
Electric layer is divided into longitudinal conductive region of two or more mutually insulateds, and each conductive region is equidistant；The
Conductive region on one conductive layer is spatially mutually perpendicular to interlock with the conductive region on the second conductive layer.By to conductive layer
Division, writing film is divided into reticular structure, each grid be one individually erasing region.
Apply voltage respectively for each conductive region on the first conductive layer and the second conductive layer, in this way in each erasing region energy
It is enough respectively formed electric field, using the different electric fields formed in each erasing region, realizes selective erase.
As an implementation, the first conductive layer is divided into two lateral conductive regions, the second conductive layer is drawn
It is divided into two longitudinal conductive regions, two spatially overlapped parts of conductive layer form multiple erasing regions, use
The voltage application method of realization liquid crystal writing plate selective erase in embodiment one or embodiment two, is the first conductive layer and the
Each conductive region on two conductive layers applies voltage respectively, is respectively formed electric field in multiple erasing regions, can be realized to any
The erasing in a erasing region.
Embodiment six
On the basis of embodiment one arrives embodiment five, discloses and applied using the voltage of realization liquid crystal writing plate selective erase
The concrete application product of the liquid crystal writing film of adding method, such as:
It will be applied on board using the liquid crystal writing film for the voltage application method for realizing liquid crystal writing plate selective erase,
Realize the selective erase function of board.
The existing liquid crystal board remembered, for example, by resistance type touch control screen induction pressure, being calculated when writing
Pressure position feeds back simultaneously pen trace track, realizes the storage of handwriting trace；Alternatively, converting standard character for handwriting trace
Or test pattern is stored.
It will be remembered using the liquid crystal writing film for the voltage application method for realizing liquid crystal writing plate selective erase applied to above-mentioned
The liquid crystal board recalled, realizes the function of selective erase.
Further, communication unit is set on the above-mentioned board that there is selective erase function simultaneously with memory function
Member is communicated by way of wired or wireless communication with external equipment.
External equipment can be the mobile terminals such as mobile phone, PAD, and being also possible to PC machine or those skilled in the art can think
The other equipment terminal arrived.
Similarly, use of the invention realizes the liquid crystal writing film of the voltage application method of liquid crystal writing plate selective erase also
Can be applied to blackboard that other can remember perhaps on drawing board and can by the handwriting trace information or standard character of storage or
Person's test pattern is sent to external equipment by communication unit.
Alternatively embodiment, by of the invention using the voltage application side for realizing liquid crystal writing plate selective erase
The liquid crystal writing film of method is applied to that luminous energy board, luminous energy liquid crystal handwriting pad, the big liquid crystal writing blackboard of luminous energy, luminous energy is dustless writes
Plate, luminous energy Portable blackboard, electronic drawing board, lcd electronic writing plate, electronic handwritten plate, electronic recording notebook, drawing pad, children
Handwriting pad, allowing child daubing drawing board, erasing rubber function sketching board, liquid crystal electron drawing boards or color liquid crystal handwriting pad or ability
In other Related products that field technique personnel can be known, to realize the selective erase function of the said goods.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (12)
1. a kind of voltage application system for realizing liquid crystal writing plate selective erase, comprising: liquid crystal writing film, the liquid crystal writing film
Including the first conductive layer, the second conductive layer and the liquid crystal layer between two conductive layers；Two conductive layers are divided respectively
For two or more conduction regions；It is characterized in that, being applied to the conduction region of first conductive layer in covering selective erase region
Add first voltage；Second voltage is applied to the conduction region of second conductive layer in covering selective erase region；Remaining conduction region is in
High-impedance state；First voltage and second voltage are formed two conduction region space overlap positions wipes electric field, realizes selective erase.
2. a kind of voltage application system for realizing liquid crystal writing plate selective erase as described in claim 1, which is characterized in that institute
Conduction region connection multivoltage output circuit is stated, the multivoltage output circuit can apply the first electricity as needed for conduction region
Pressure, second voltage or high-impedance state.
3. a kind of voltage application system for realizing liquid crystal writing plate selective erase as described in claim 1, which is characterized in that institute
Stating first voltage is at least more than voltage required for capable of wiping completely written handwriting, and the second voltage is no-voltage.
4. a kind of voltage application method for realizing liquid crystal writing plate selective erase, liquid crystal layer is located between two conductive layers, two
Conductive layer is divided into two or more conduction regions respectively；It is characterized in that, its process are as follows:
First voltage is applied to the conduction region of first conductive layer in covering selective erase region；To the of covering selective erase region
The conduction region of two conductive layers applies second voltage；Remaining conduction region is in high-impedance state；First voltage and second voltage are led at two
Electric area's space overlap position forms erasing electric field, realizes selective erase.
5. a kind of voltage application system for realizing liquid crystal writing plate selective erase, comprising: liquid crystal writing film, the liquid crystal writing film
Liquid crystal layer including two conductive layers and between two conductive layers；Two conductive layers are divided into two or two respectively
Above conduction region；It is characterized in that, applying the first electricity to the conduction region of first conductive layer in covering first partial erasing region
Pressure；Second voltage is applied to the conduction region of second conductive layer in covering first partial erasing region；To covering the second selective erase
The conduction region of first conductive layer in region applies second voltage；To the conduction of second conductive layer in the local scratching area of covering second domain
Area applies first voltage；Remaining conduction region is in high-impedance state；The first partial erasing region and the second local scratching area domain pair
Angle is adjacent；
The conduction region space overlap position of first voltage and second voltage on two conductive layers forms erasing electric field, realizes diagonal
The selective erase of adjacent area.
6. a kind of voltage application system for realizing liquid crystal writing plate selective erase as claimed in claim 5, which is characterized in that institute
Conduction region connection multivoltage output circuit is stated, the multivoltage output circuit can apply the first electricity as needed for conduction region
Pressure, second voltage or high-impedance state.
7. a kind of voltage application system for realizing liquid crystal writing plate selective erase as claimed in claim 5, which is characterized in that institute
Stating first voltage is at least more than voltage required for capable of wiping completely written handwriting, and the second voltage is no-voltage.
8. a kind of voltage application method for realizing liquid crystal writing plate selective erase, liquid crystal writing film is located between two conductive layers,
Two conductive layers are divided into two or more conduction regions respectively；It is characterized in that, its process are as follows:
First voltage is applied to the conduction region of first conductive layer in covering first partial erasing region；To covering first partial erasing
The conduction region of second conductive layer in region applies second voltage；To the conduction of first conductive layer in the local scratching area of covering second domain
Area applies second voltage；First voltage is applied to the conduction region of second conductive layer in the local scratching area of covering second domain；Remaining is led
Electric area is in high-impedance state；The first partial erasing region and the second local scratching area domain are diagonally adjacent；
The conduction region space overlap position of first voltage and second voltage on two conductive layers forms erasing electric field, realizes diagonal
The selective erase of adjacent area.
9. a kind of liquid crystal writing film, which is characterized in that using realization liquid crystal writing plate selective erase described in claim 4 or 8
Voltage application method, realize liquid crystal writing film selective erase；
The liquid crystal writing film includes: the first conductive layer, the second conductive layer and the liquid crystal layer between two conductive layers；Institute
It states the first conductive layer and the second conductive layer is divided into the conductive region of two or more mutually insulateds respectively；
Each conductive region of first conductive layer is distributed along first direction, and each conductive region of second conductive layer is along second
Directional spreding, first direction and second direction are spatially interlaced；The conduction of first conductive layer and the second conductive layer
Erasable region is collectively formed in lap of the region in space liquid crystal layer region corresponding with the part.
10. a kind of board, which is characterized in that including liquid crystal writing film as claimed in claim 9；
Further, further includes:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Further, the board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character or standard of storage
Figure is sent to external equipment.
11. a kind of blackboard, which is characterized in that including liquid crystal writing film as claimed in claim 9；
Further, further includes:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Further, the blackboard further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character or standard of storage
Figure is sent to external equipment.
12. a kind of drawing board, which is characterized in that including liquid crystal writing film as claimed in claim 9.
Further, further includes:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Further, the drawing board further include:
Person's handwriting storage unit, for directly recording and storing handwriting trace information；Alternatively, converting standard character for handwriting trace
Or it test pattern and stores；
Communication unit, for being communicated with external equipment, by the handwriting trace information or standard character or standard of storage
Figure is sent to external equipment.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811455640.6A CN110147006B (en) | 2018-11-30 | 2018-11-30 | Voltage application system and method for realizing local erasing of liquid crystal writing board, liquid crystal writing film, writing board, blackboard and drawing board |
| CA3057909A CA3057909C (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| KR1020197034181A KR102328206B1 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film with partial erasure, partial erasure method, multiple voltage output circuit and positioning system |
| PCT/CN2019/071227 WO2019227942A1 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film capable of implementing local erasure, local erasure method, multi-voltage output circuit, and positioning system |
| AU2019236746A AU2019236746B2 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| US16/492,689 US11137899B2 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system capable of partial erasing |
| EP19786258.4A EP3605213A4 (en) | 2018-05-30 | 2019-01-10 | Liquid crystal writing film capable of implementing local erasure, local erasure method, multi-voltage output circuit, and positioning system |
| JP2019564923A JP7130676B2 (en) | 2018-05-30 | 2019-01-10 | Partially erasable liquid crystal writing film, partial erasing method, multi-voltage output circuit and positioning system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811455640.6A CN110147006B (en) | 2018-11-30 | 2018-11-30 | Voltage application system and method for realizing local erasing of liquid crystal writing board, liquid crystal writing film, writing board, blackboard and drawing board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110147006A true CN110147006A (en) | 2019-08-20 |
| CN110147006B CN110147006B (en) | 2021-03-19 |
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ID=67589312
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811455640.6A Active CN110147006B (en) | 2018-05-30 | 2018-11-30 | Voltage application system and method for realizing local erasing of liquid crystal writing board, liquid crystal writing film, writing board, blackboard and drawing board |
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| CN (1) | CN110147006B (en) |
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