CN110147029A - The manufacturing method of photomask and photomask - Google Patents

The manufacturing method of photomask and photomask Download PDF

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Publication number
CN110147029A
CN110147029A CN201910348874.9A CN201910348874A CN110147029A CN 110147029 A CN110147029 A CN 110147029A CN 201910348874 A CN201910348874 A CN 201910348874A CN 110147029 A CN110147029 A CN 110147029A
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China
Prior art keywords
pattern
photomask
film
transfer
semi
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CN201910348874.9A
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CN110147029B (en
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山口昇
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Hoya Corp
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Hoya Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The manufacturing method of photomask and photomask.Photomask has the 1st transfer pattern for being used to form the 1st Thinfilm pattern on the transparent substrate, the manufacturing method of the photomask is with the following process: preparing the process of photomask blank, which is obtained from having sequentially formed semi-transparent film and photomask on the transparent substrate；And the 1st transfer use pattern formation process, use photo-mask process, the 1st transfer pattern is formed according to semi-transparent film and photomask, wherein, 1st transfer has following shape with pattern, the shape is used for the 1st Thinfilm pattern formed in electronic device by exposure, and the indicia patterns for the line width that the exposure device used when including exposure can not be differentiated, the shape are the 2nd Thinfilm pattern in order to be formed in electronic device and the shape of a part of the 1st transfer pattern that can be delimited by additional processing removal by indicia patterns.

Description

The manufacturing method of photomask and photomask
Present patent application is entitled " manufacturing method of electronic device and display device, photomask and its system Make method ", the applying date be on October 12nd, 2013, the division Shen application No. is the application for a patent for invention of " 201310475805.7 " Please.
Technical field
It the present invention relates to the use of the manufacturing method of the electronic device of photoetching more particularly to the manufacturing method of display device.Also It is related to the photomask used in above-mentioned manufacturing method and its manufacturing method.
Background technique
In patent document 1, describe in the manufacturing process of electro-optical device or semiconductor device with good right The method that position precision forms pattern.Following method is described in patent document 1: measuring the center phase of the alignment mark of upper layer side For the departure at the center of the alignment mark of lower layer side, repeat scheduled operation until departure be in permissible value with It is interior.
Gray scale mask (the gray tone that can manufacture the TFT (thin film transistor (TFT)) of high-quality is described in patent document 2 Mask) the manufacturing method for (being also referred to as " multi-gray scale photomas " in the present invention).
The evaluation method and its device of optical mask pattern are described in patent document 3.
[patent document 1] Japanese Unexamined Patent Publication 2003-209041 bulletin
[patent document 2] Japanese Unexamined Patent Publication 2005-37933 bulletin
No. 3136218 bulletins of [patent document 3] Japanese Patent
Patent document 1 is related to the manufacturing method of electro-optical device, the manufacturing method of semiconductor device, in particular in forming layer In the method for folded pattern, the pattern forming method of registration accuracy can be improved compared with the existing methods.
Such as in the manufacturing process of the semiconductor devices such as the electro-optical devices such as liquid crystal display device or LSI, by various Conductive film and insulating film are laminated to form the elements such as transistor, diode, capacitor, resistance or wiring etc. (hereinafter referred to as " electronic device ").At this point, for example having the electronic device for the electrical characteristic being consistent with design in order to obtain, the electronics device is constituted Multiple layers of mutual aligning accuracy of part is particularly significant.For example, for institute in the liquid crystal display device of active matrix mode For the thin film transistor (TFT) (Thin Film Transistor, be simply denoted as " TFT " below) used, the multiple of TFT are being constituted In the respective pattern of layer, if be formed in the contact hole of passivation layer (insulating layer) not accurately with the interconnecting piece that is in its lower layer side Alignment, then it cannot be guaranteed that the correct movement of liquid crystal display device.Such situation also complete phase in the semiconductor devices such as LSI Together.
In these lit-par-lit structures, following process is utilized mostly: suitably repeating film forming and composition, using with not The same transfer photomask of pattern, is patterned each film application photo-mask process being stacked.At this point, as each structure Contraposition when figure reference can be set to the alignment mark of lower layer side in the composition of upper layer side to be aligned.
But even if method disclosed in patent document 1 for alignment error measurement, evaluation be it is useful, can not Say only can just be such that alignment error itself effectively reduces with this method.
In addition, the research of people according to the present invention, the original of the alignment error generated in the electronic device with lit-par-lit structure Multiple because having, these alignment errors are shown cumulatively in the electronic device produced.
Patent document 2 describes following method, and this method is used in the manufacturing process of gray scale mask, prevents due to multiple The coincidence deviation of the photo-mask process of progress, the description process for needing to be performed a plurality of times, and there may be use the photomask to manufacture The malfunction of TFT out.
In addition, describing following method in patent document 3: in the description process of photomask, to resist film depiction It is not necessarily completely the same with the pattern based on design coordinate data when case.Therefore, it describes in patent document 3 from overall diagram The whether good method of mask pattern is evaluated from the perspective of the configuration deviation of case.
That is, for the position deviation for the alignment error for showing as electronic device, it is multiple in addition to what is referred in patent document 1 Other than position deviation caused by the registration accuracy of layer, the grid deviation for the transfer pattern that used photomask has had Caused position deviation can also have an impact.
In addition, different photomasks is placed into exposure device according to every layer when forming the multi-ply construction of electronic device, Read alignment mark and lamination pattern.The research of people is it is found that alignment caused by the exposure device used at this time according to the present invention Error (EA) is about ± 0.6 μm or so.
In addition, according to the present invention known to the research of people: alignment error ingredient that used photomask has itself (about The explanation that patent document 3 is done, describe for 1 time in occur and ideal coordinates coincidence of the deviation ingredient in repeatedly describe due to The alignment error ingredient EM of error after synthesis, i.e. mask itself) it is the level roughly the same with above-mentioned EA, i.e. ± 0.5 μm of left side It is right.
In addition, to be concerned with herein, for commenting for the alignment error that is generated in the electronic device with lit-par-lit structure Valence, compared to the coordinate absolute value of each layer, the evaluation by the relative deviation of interlayer is more appropriate to carry out the evaluation of alignment error. That is, if layer 1 and layer 2 have same amount of alignment error ingredient relative to imaginary ideal coordinates in the same direction, Registration accuracy will not generate deterioration, to the performance of electronic device also without biggish adverse effect.But when with different directions Alignment error ingredient when, be possibly realized the alignment error amount for making device generate malfunction since it is cumulative sometimes.
Summary of the invention
Therefore, in the present invention, it is contemplated that above situation is especially studied and realizes the side for reducing alignment error ingredient EM Method.That is, it is an object of the invention to obtain the manufacturing method of following electronic device: this method can reduce in electronic device Alignment error ingredient, i.e. 1 time that photomask used in manufacturing process has itself describe in the grid deviation ingredient that occurs because Coincidence in repeatedly describing and the alignment error ingredient EM that synthetically generates.
In order to solve the above problems, the present invention has following structure.The present invention is the system of the photomask of following structures 1~2 Make the photomask of method and following structures 3~5.
(structure 1)
Structure 1 of the invention is a kind of manufacturing method of photomask, which has following stacking structure for manufacturing The electronic device made, the lit-par-lit structure be laminated on the same substrate the 1st film is patterned made of the 1st film figure Obtained from case and the 2nd Thinfilm pattern made of being patterned to the 2nd film, the manufacturing method of the photomask is characterized in that, The photomask has the 1st transfer pattern for being used to form the 1st Thinfilm pattern, the system of the photomask on the transparent substrate It is with the following process to make method: preparing the process of photomask blank, which is the successively shape on the transparent substrate At obtained from semi-transparent film and photomask；And the 1st transfer use pattern formation process, using photo-mask process, according to described Semi-transparent film and the photomask form the 1st transfer pattern, wherein and the 1st transfer has following shape with pattern, The shape is used to form the 1st Thinfilm pattern in the electronic device by exposure, and use when including the exposure The indicia patterns of line width that can not differentiate of exposure device, the shape is to form the described 2nd in the electronic device Thinfilm pattern and a part of the 1st transfer pattern that can be delimited by additional processing removal by the indicia patterns Shape.
(structure 2)
Structure 2 of the invention is in the manufacturing method of the photomask described in structure 1, which is characterized in that the photomask Green body be the etching characteristic semi-transparent film different from each other and the photomask have been stacked gradually on the transparent substrate and At.
(structure 3)
Structure 3 of the invention is a kind of photomask, is used to manufacture the electronic device with following lit-par-lit structure, described Lit-par-lit structure be laminated on the same substrate the 1st film is patterned made of the 1st Thinfilm pattern and to the 2nd film into Obtained from 2nd Thinfilm pattern made of row composition, which is characterized in that, which has use on the transparent substrate In the 1st transfer pattern for forming the 1st Thinfilm pattern, the 1st transfer pattern is by being formed by semi-transparent film and shading Film is constituted, and the 1st transfer pattern has following shape, which is used to form the described of the electronic device by exposure 1st Thinfilm pattern, and the indicia patterns of line width that the exposure device that uses of while including the exposure can not be differentiated, can pass through A part for the 1st transfer pattern that additional processing removal delimited by the indicia patterns, with described as being used to form Pattern is used in 2nd transfer of the 2nd Thinfilm pattern of electronic device.
(structure 4)
Structure 4 of the invention is in the photomask described in structure 3, which is characterized in that the 2nd transfer has with pattern By semi light transmitting part round transmittance section, by light shielding part round transmittance section, by light shielding part round semi light transmitting part, by semi light transmitting part Round light shielding part, by transmittance section round light shielding part, by transmittance section round semi light transmitting part in any one.
(structure 5)
Structure 5 of the invention is in the photomask described in structure 3 or structure 4, which is characterized in that the indicia patterns by Round the light shielding part of the 1st transfer pattern a part, the semi light transmitting part or transmittance section structure of 0.3 μm~1.5 μm width At.
Invention effect
The manufacture of electronic device according to the present invention directly using same photomask or passes through addition for multiple layers Processing changes transfer and is carried out with pattern using each possessed by the photomask used for multiple layers thus, it is possible to make Position deviation trend is consistent, to improve registration accuracy.For this purpose, will to different layers carry out photo-mask process condition change or The change (additional processing) for the transfer pattern that photomask has, and in the latter case, it will not be produced due to additional processing Raw new alignment error ingredient.It is each to multiple layers in any one shown as the embodiment of the present invention The edge for the transfer pattern that layer is transferred all is to describe to delimit by 1 time in the manufacturing process of photomask.
In accordance with the invention it is possible to obtain the manufacturing method of following electronic device, this method can at least reduce in electronics The coordinate occurred in the description of alignment error ingredient EM, i.e. 1 time possessed by photomask used in the manufacturing process of device itself Alignment error after being synthesized due to coincidence deviation of the deviation ingredient in repeatedly describe.
Detailed description of the invention
Fig. 1 is a mode for showing the photomask used in the process of the manufacture electronic device of the embodiment of the present invention 1 Schematic diagram.(a) it is schematic top plan view, is (b) schematic cross-section, the transmission light quantity point on chain-dotted line shown in (a) (c) is shown Cloth and resolution threshold for the anticorrosive additive material used in the 1st Thinfilm pattern formation process.
Fig. 2 is to show showing for the 1st Thinfilm pattern formation process in the process of the manufacture electronic device of the embodiment of the present invention 1 It is intended to.
Fig. 3 is the schematic diagram of the photomask used in the 2nd Thinfilm pattern formation process of the embodiment of the present invention 1, the light Mask is photomask identical with photomask shown in FIG. 1.(a) it is schematic top plan view, is (b) schematic cross-section, (c) shows (a) transmission light quantity on chain-dotted line shown in is distributed and for the anticorrosive additive material used in the 2nd Thinfilm pattern formation process Resolution threshold.
Fig. 4 is to show showing for the 2nd Thinfilm pattern formation process in the process of the manufacture electronic device of the embodiment of the present invention 1 It is intended to.
Fig. 5 is a mode for showing the photomask used in the process of the manufacture electronic device of the embodiment of the present invention 2 Schematic diagram.(a) it is schematic top plan view, is (b) schematic cross-section, the transmission light quantity point on chain-dotted line shown in (a) (c) is shown Cloth and resolution threshold for the anticorrosive additive material used in the 1st Thinfilm pattern formation process.
Fig. 6 is to show showing for the 1st Thinfilm pattern formation process in the process of the manufacture electronic device of the embodiment of the present invention 2 It is intended to.
Fig. 7 is the schematic diagram of the photomask used in the 2nd Thinfilm pattern formation process of the embodiment of the present invention 2, the light Mask is photomask identical with photomask shown in fig. 5.(a) it is schematic top plan view, is (b) schematic cross-section, (c) shows (a) transmission light quantity on chain-dotted line shown in is distributed and for the anticorrosive additive material used in the 2nd Thinfilm pattern formation process Resolution threshold.
Fig. 8 is to show showing for the 2nd Thinfilm pattern formation process in the process of the manufacture electronic device of the embodiment of the present invention 2 It is intended to.
Fig. 9 is a mode for showing the photomask used in the process of the manufacture electronic device of the embodiment of the present invention 3 Schematic diagram.(a) it is schematic top plan view, is (b) schematic cross-section, the transmission light quantity point on chain-dotted line shown in (a) (c) is shown Cloth and resolution threshold for the anticorrosive additive material used in the 1st Thinfilm pattern formation process.
Figure 10 is the 1st Thinfilm pattern formation process shown in the process of the manufacture electronic device of the embodiment of the present invention 3 Schematic diagram.
Figure 11 is after carrying out additional processing to photomask shown in Fig. 9, the embodiment of the present invention 3 the 2nd Thinfilm pattern shape At the schematic diagram of photomask used in process.(a) it is schematic top plan view, is (b) schematic cross-section, (c) shows shown in (a) Transmission light quantity distribution on chain-dotted line and the differential threshold for the anticorrosive additive material used in the 2nd Thinfilm pattern formation process Value.
Figure 12 is the 2nd Thinfilm pattern formation process shown in the process of the manufacture electronic device of the embodiment of the present invention 3 Schematic diagram.
Figure 13 is the work for showing the additional processing for obtaining photomask shown in Figure 11, illustrating as embodiment 4 The schematic diagram of sequence.
Figure 14 is the work for showing the additional processing for obtaining photomask shown in Figure 11, illustrating as embodiment 5 The schematic diagram of sequence.
Figure 15 is the 1st Thinfilm pattern shape shown in the process of the manufacture electronic device of the comparative example 1 as conventional example At the schematic diagram used in process as the photomask of mask A.(a) it is schematic top plan view, is (b) schematic cross-section, (c) shows The transmission light quantity on chain-dotted line shown in (a) is distributed and for the resist material used in the 1st Thinfilm pattern formation process out The resolution threshold of material.
Figure 16 is that the 1st Thinfilm pattern being shown as in the process of the manufacture electronic device of the comparative example 1 of conventional example is formed The schematic diagram of process.
Figure 17 is the 2nd Thinfilm pattern shape shown in the process of the manufacture electronic device of the comparative example 1 as conventional example At the schematic diagram used in process as the photomask of mask B.(a) it is schematic top plan view, is (b) schematic cross-section, (c) shows The transmission light quantity on chain-dotted line shown in (a) is distributed and for the resist material used in the 1st Thinfilm pattern formation process out The resolution threshold of material.
Figure 18 is that the 2nd Thinfilm pattern being shown as in the process of the manufacture electronic device of the comparative example 1 of conventional example is formed The schematic diagram of process.
Figure 19 is the photomask manufacture shown for reducing the alignment error ingredient EM generated in photomask manufacturing process The schematic diagram of 1 embodiment of method.
Figure 20 be then Figure 19 and show for reducing the alignment error ingredient EM generated in photomask manufacturing process The schematic diagram of 1 embodiment of photo mask manufacturing method.
Figure 21 is shown in the photo mask manufacturing method carried out using Twi-lithography process, for determining each process The mutual deviation of the alignment of transfer pattern distance D1 and D2 schematic diagram.
Label declaration
10: transparent substrate；11: transmittance section；12: semi light transmitting part；13: light shielding part；15: alignment mark；20: semi-transparent film； 21: semi-transparent film figure；31: shading film figure；40a: the 1 resist film (positivity)；40b: the 1 resist film (negativity)； 41a: the 1 resist pattern (positivity)；41b: the 1 resist pattern (negativity)；45: additional processing resist film；46: additional Resist pattern is used in processing；47: additional processing resist film；48: additional processing resist pattern；50: device substrate； 60: the 1 films；61: the 1 Thinfilm patterns；70: the 2 films；70a: the 2 film (positivity)；70b: the 2 film (negativity)；71: 2nd Thinfilm pattern；71a: the 2 Thinfilm pattern (positivity)；71b: the 2 Thinfilm pattern (negativity)；80: indicia patterns；90: contact Hole.
Specific embodiment
In the present invention, it visualizes in the manufacture for the multi-ply construction that electronic device has, if it is possible to realize available The photomask being patterned by the photomask that same description process is formed to multiple layers, then can reduce above-mentioned alignment error. That is, even if 1 photomask has the alignment error ingredient determined when compared with the design data with the photomask, if passed through Photomask with identical alignment error ingredient is respectively patterned the multiple layers for including in the lit-par-lit structure of electronic device, then Above-mentioned alignment error ingredient EM will not be displayed actually in the electronic device as final products.That is, theoretically making EM Ingredient be zero be not impossible.
For example, even if being difficult to manufacture the photomask of multiple alignment error trend having the same, if use can transfer it is logical Transfer 1 photomask of pattern (as needed while carrying out additional processing) that same description process delimited out is crossed, and should Photomask is applied to multiple layers, then the alignment error trend that transfer pattern has is identical, thus enable to alignment error at EM is divided to essentially become zero.
Therefore, the manufacturing method of electronic device of the invention is with the following process: the 1st Thinfilm pattern formation process, to shape Implement at the 1st film on substrate or the 1st resist film being formed on the 1st film comprising having used the 1st photomask The 1st exposure the 1st photo-mask process, thus the 1st film is patterned；And the 2nd Thinfilm pattern formation process, to shape Implement at the 2nd film on the substrate or the 2nd resist film being formed on the 2nd film comprising using Thus 2nd patterning thin film is different from the 1st Thinfilm pattern by the 2nd photo-mask process of the 2nd exposure of the 2nd photomask Shape.The manufacturing method of electronic device of the invention is characterized in that the 1st photomask and the 2nd photomask have The 1st transfer pattern comprising transmittance section, light shielding part and semi light transmitting part, and the 2nd photomask is with the 1st photomask Same photomask or the 2nd photomask are implemented with the 1st transfer pattern having to the 1st photomask Additional processing and the 2nd transfer formed the photomask of pattern.
Specifically, the manufacturing method of electronic device of the invention can be with the following process: forming the 1st film on substrate Process；1st Thinfilm pattern formation process, it is real to the 1st film or the 1st resist film being formed on the 1st film The 1st the 1st photo-mask process exposed comprising having used the 1st photomask is applied, thus the 1st film is patterned；It is being formed There is the process that the 2nd film is formed on the substrate of the 1st Thinfilm pattern；And the 2nd Thinfilm pattern formation process, to described 2nd film or the 2nd resist film being formed on the 2nd film are implemented to include to have used the 2nd of the 2nd photomask to expose Thus 2nd patterning thin film is the shape different from the 1st Thinfilm pattern by the 2nd photo-mask process.Electronics device of the invention The manufacturing method of part is characterized in that the 1st photomask and the 2nd photomask have comprising transmittance section, light shielding part and half 1st transfer pattern of transmittance section, and the 2nd photomask and the 1st photomask are same photomask or described the 2 photomasks are to implement the 2nd of additional processing and formation with pattern with the 1st transfer having to the 1st photomask The transfer photomask of pattern.
2nd photomask used in the manufacturing method of electronic device of the invention and the 1st photomask are same photomasks, Or the 2nd photomask is implemented additional processing with the 1st transfer pattern having to the 1st photomask and is formed The 2nd transfer use pattern.That is, the 1st photomask and the 2nd photomask are formed in same transfer area on same transparent substrate Obtained from transfer pattern.Also, it, can be by being used to form the 1st transfer pattern according to aftermentioned method Describe process to delimit the 2nd transfer pattern.Therefore, the photomask used in the manufacturing process of electronic device can be reduced certainly Alignment error ingredient EM caused by body.In addition, transfer area, which refers to, will be in the transfer pattern in the region by exposing It is transferred to the region on transfer printing body.
In the manufacturing method of existing electronic device, for multiple layers that electronic device has, using being respectively provided with not Same transfer multiple photomasks of pattern, or (polychrome light modulation is covered using having multiple 1 photomask for transferring patterns Mould).In above-mentioned two situations, with the grid deviation generated when description is all separately included in pattern, the coordinate is inclined for multiple transfers Difference is revealed as alignment error due to overlapping.± 0.5 μ is not generated for reducing as the alignment error ingredient EM The means of the error of m or so.Therefore, have to bear alignment error ingredient EM and exposure device causes ± 0.6 μm of (above-mentioned EA) The alignment error of the alignment error of left and right maximum left and right more than 1 μm after being added.In addition, alignment error caused by exposure device be Photomask is carried to the alignment mark in the stage of exposure device reading accuracy and mask substrate corresponding with the reading Table assembly mechanical precision total error.According to the present invention, it theoretically can be realized following result: not producing substantially Alignment error other than alignment error caused by raw exposure device.
It, can be using any in dry ecthing and wet etching when being etched in the manufacturing process of electronic device of the invention A kind of engraving method.In view of the isotropism of etching and manufacturing cost etc., more preferable wet etch.In fabrication mask Same more preferable wet etch.In addition, in the case where application dry ecthing, caused by needing to consider the etching because of film in advance The film reduction amount of resist (photosensitive material).
Photomask of the invention is that have the photomask comprising light shielding part, semi light transmitting part and the transfer of transmittance section pattern. As illustrated in aftermentioned structure, the light for having sequentially formed semi-transparent film and photomask on the transparent substrate can be used Mask blank manufactures the photomask.
In addition, as illustrated in the later-described embodiments, as in lit-par-lit structure possessed by contemplated electrical device Any one layer, there is the case where using photosensitive material, on the other hand, there is also use without photosensitive material Situation.For example, can be patterned by photo-mask process to the 1st film itself in the case where the 1st film is photosensitive material To form destination layer.On the other hand, in the case where the 1st film is without photosensitive material, in order to be carried out to the 1st film Composition, can the 1st film surface formed resist film (photoresist film), it is patterned and as etching mask pair 1st film is etched.Such situation is also same for the 2nd film.In this sense, it shows in the above description For " the 1st film or the 1st resist film being formed on the 1st film ".That is, refer to " the 1st film (be have it is photosensitive Property film the case where) or be formed in the 1st resist film (the 1st film do not have photosensitive situation) on the 1st film " The meaning.
In addition, the resist film on the 1st film or resist film or the 2nd film or the 2nd film on the 1st film, i.e., The each film for being successively patterned and becoming the 1st Thinfilm pattern and the 2nd Thinfilm pattern is different material, thus generally has Different etching characteristics is but it is also possible to be identical material.In addition it is also possible to be formed in a film formation process.
In the manufacturing method of electronic device of the invention, the 2nd photomask and the 1st photomask are that same light is covered Mould, and the 1st transfer light shielding part for being included with pattern and the edge of semi light transmitting part delimited by 1 description process 's.That is, not needing to carry out multiple coincidences for describing process, therefore will not generate and be retouched by different when forming the 1st transfer pattern Draw the coincidence deviation of the pattern of process formation.
In the manufacturing method of electronic device of the invention, it is preferred that the 1st Thinfilm pattern formation process with it is described 2nd Thinfilm pattern formation process applies different conditions.
" different conditions " include difference, the difference of resist technique, conditions of exposure of resist (photosensitive material) film Difference etc..
As the difference of resist (photosensitive material) film and resist technique, comprising the 1st Thinfilm pattern formation process and The type of the anticorrosive additive material used respectively in 2nd Thinfilm pattern formation process and the development conditions of resist be (developer solution Composition, concentration and developing time etc.) etc. different situations.Therefore, even if being that same light is covered in the 1st photomask and the 2nd photomask In the case where mould, also it is able to use the same photomask and forms 2nd Thinfilm pattern different from the 1st Thinfilm pattern.In addition, making It is (also referred to as " additional to add with the 2nd transfer pattern processed and formed additional to the 1st transfer pattern implementation of the 1st photomask 2nd transfer pattern of work ".) in the case where, also it is capable of forming 2nd Thinfilm pattern different from the 1st Thinfilm pattern.
Alternatively, the difference as above-mentioned resist (photosensitive material) film, the 1st film or described 1st anti-can be set as It loses agent film and the coating film thickness of the 2nd film or the 2nd resist film is mutually different.
The difference of conditions of exposure includes the 1st exposure situation different with the application conditions of the 2nd exposure.For example, can be by making The exposure intensity of light source used in 1st exposure and the 2nd exposure is different or keeps irradiation time different, to make irradiate light quantity not Together.For example, the irradiate light quantity of the 1st exposure can be made bigger than the irradiate light quantity of the 2nd exposure or opposite.
In the manufacturing method of electronic device of the invention, it is preferred that the 1st film or the 1st resist film There is different photonasty from the 2nd film or the 2nd resist film.
" different photonasty " are one of difference of anticorrosive additive material, for example, it may be the difference of negativity and positivity, or It is also possible to the difference (for the photosensitive characteristic difference of light quantity) of sensitivity characteristic, can also be for developer Developability difference.It is different photosensitive by having the 1st film or the 1st resist film and the 2nd film or the 2nd resist film Property, even if in the case where having used the photomask of the 2nd transfer pattern after same photomask or additional processing, it also being capable of shape The 2nd different Thinfilm pattern of 1 Thinfilm pattern of Cheng Yu.
In the manufacturing method of electronic device of the invention, can be, the 1st film or the 1st resist film by Positive photosensitive material is constituted, the 2nd film or the 2nd resist film the being negative property photosensitive material.Because the 1st film or 1st resist film is made of Positive photosensitive material, and the 2nd film or the 2nd resist film being negative property photosensitive material are as a result, Make in the case where having used the photomask of the 2nd transfer pattern after same photomask or additional processing, it also can be reliably Form 2nd Thinfilm pattern different from the 1st Thinfilm pattern.
In the manufacturing method of electronic device of the invention, can be, the 1st film or the 1st resist film by Negative photosensitive material is constituted, the 2nd film or the 2nd resist film the being positive property photosensitive material.Because the 1st film or 1st resist film is made of Positive photosensitive material, and the 2nd film or the 2nd resist film being negative property photosensitive material are as a result, Make in the case where having used the photomask of the 2nd transfer pattern after same photomask or additional processing, it also can be reliably Form 2nd Thinfilm pattern different from the 1st Thinfilm pattern.
It in the manufacturing method of electronic device of the invention, can be, the 2nd transfer that the 2nd photomask has It is that the 1st transfer pattern having to the 1st photomask is implemented to transfer use obtained from the additional processing with pattern Pattern, the additional processing is to form the 2nd transfer pattern by removing a part of the 1st transfer pattern.
2nd transfer has in the stage for manufacturing the 1st photomask with pattern, forms the 1st transfer figure The pattern edge formed when case, the pattern edge as the 2nd transfer pattern.That is, being used to form the 2nd transfer pattern In the process of additional processing, though in the case where carrying out new description process, in the new description process, also not shape again At the pattern edge of the 2nd transfer pattern.That is, the description process carried out in the formation process of the 2nd transfer pattern does not have Form the function of the pattern edge of the 2nd transfer pattern.2nd transfer pattern can be set as implementing the 1st transfer pattern of removal In isolated portions additional processing after transfer pattern.Therefore, the 2nd transfer is actually drawn by being described by 1 time with pattern The pattern made is constituted, which is to be delimited in the description of the 1st transfer pattern, therefore there is no two transfers figures The mutual description position deviation of case.Therefore, can reduce photomask used in the manufacturing process of electronic device itself has Alignment error caused by alignment error ingredient EM.
In the manufacturing method of electronic device of the invention, it is preferred that the 1st transfer pattern, which has, is using institute State the indicia patterns for the line width that the exposure device used when the 1st photomask is exposed can not be differentiated.
In the additional processing, when a part for removing the 1st transfer pattern transfers to form the described 2nd with figure When case, the indicia patterns can be used.That is, the indicia patterns can be set as that two sides are clipped by light shielding part, can not use exposure dress (transparent substrate exposes for the semi light transmitting part (part that the semi-transparent film on transparent substrate exposes) for setting the line width of resolution or transmittance section Part)., can be using the indicia patterns as boundary in additional processing, the 1st transfer of side of the removal in the indicia patterns is used A part of pattern.As a result, the 2nd transfer pattern is included in the 1st transfer pattern originally, therefore between the two not There are mutual description position deviations.Therefore, in the manufacturing process of electronic device, above-mentioned alignment error ingredient can be reduced EM。
In addition, forming photomask using the mask blank on the transparent substrate successively with semi-transparent film and photomask Under above situation, indicia patterns can be set as removing photomask and the semi light transmitting part that is formed according to the shape of indicia patterns.In addition, should In the case of, indicia patterns can be set as the semi-transparent film being laminated according to the shape removal of indicia patterns and photomask both sides and be formed Transmittance section.Since it is desired that indicia patterns can not be differentiated in exposure, (what not up to anticorrosive additive material had is photosensitive Threshold value), thus preferably the former.
When the line width of the indicia patterns is excessive, can generate can tell the indicia patterns in the 1st exposure The unfavorable condition of line width.On the other hand, when the line width of the indicia patterns is too small, the required description process in additional processing In (aftermentioned), it is difficult to absorb and have been formed in the alignment error between the 1st transfer pattern on photomask.In view of this Point, the line width of the indicia patterns are preferably 0.3 μm~1.5 μm, more preferably 0.3 μm~1.0 μm.
Here, exposure device is well known exposure device as LCD exposure device or liquid crystal exposure device, such as The equimultiple for the range that NA (numerical aperture) with its optical system is 0.06~0.10, σ (coherence) is 0.5~1.0 exposes Optical system, more preferably, NA be in 0.08~0.1 range, σ be in 0.8~0.9 range.It is filled in such exposure In setting, the minimum widith (limit of resolution) of distinguishable pattern can be set as 3 μm or so.The present invention can also use more greatly It is applied when the transfer of the exposure device of range.For example, can be set to the model that NA is in 0.06~0.14 or 0.06~0.15 In enclosing.Also there is demand for the NA high-resolution exposure device for being more than 0.08, these exposure machines can also be applied to.As exposure Light optical wavelength, usable includes the exposure light of i line, h line, g line.From the aspect of irradiate light quantity, whole i lines, h are preferably comprised The exposure light of line, g line, but also can according to need, make it is expected that the light other than wavelength (such as i line) is cut using optical light filter etc. Only.
In the case where carrying out additional processing, the 1st film or the 1st resist film and the 2nd film or the 2nd resist film are equal It can be set as Positive photosensitive material.In addition, the 1st film or the 1st resist film and the 2nd film or the 2nd resist film can be set Being negative property photosensitive material.
The type of the 1st film and the 2nd film can be properly selected according to the type for the electronic device to be manufactured.For example, 1st film and the 2nd film may respectively be electrode layer and insulating layer.
The photomask of the manufacturing method manufacture of photomask through the invention is that have following lit-par-lit structure for manufacturing Electronic device photomask, the lit-par-lit structure be laminated on the same substrate the 1st film is patterned made of the 1st Thinfilm pattern and the 2nd Thinfilm pattern made of being patterned to the 2nd film are obtained.The photomask is that have comprising shading The transfer in portion, the semi light transmitting part and transmittance section photomask of pattern.
The manufacturing method of photomask of the invention is characterized in that, with the following process:
Prepare the process of photomask blank, which is to have sequentially formed semi-transparent film and screening on the transparent substrate Obtained from light film；
The 1st resist is formed by carrying out the 1st description to the 1st resist film being formed on the photomask The process of pattern, the 1st resist pattern are used to form the light shielding part and delimit the tentative figure of the semi light transmitting part Case；
1st resist pattern is etched the photomask as mask by the 1st etching work procedure；
The work of the 2nd resist film is formed in the entire surface comprising being formed by the light shielding part and the tentative pattern Sequence；
It is described by carrying out the 2nd process described to form the 2nd resist pattern to the 2nd resist film 2nd time resist pattern is used to form the semi light transmitting part；
The tentative pattern and the 2nd resist pattern are etched described half as mask by the 2nd etching work procedure Light-transmissive film；And
2nd resist pattern is etched the removal tentative pattern as mask by the 3rd etching work procedure.
The manufacturing method of photomask through the invention, can produce can form desired electricity by same photomask The photomask of 1st Thinfilm pattern and the 2nd Thinfilm pattern of sub- device.Further, it is possible to make the mutual of these Thinfilm patterns Alignment error ingredient EM caused by the transfer pattern being had as photomask is not generated substantially.
In these cases, " semi-transparent film and photomask are stacked gradually " and refers not only to the case where being directly laminated, do not interfered It can be with other films of sandwiched in the range of function and effect of the invention.For example, similar to the etching characteristic of photomask in semi-transparent film In the case where (etching selectivity is insufficient), sandwiched barrier film can also be etched between semi-transparent film and photomask.
In addition, with the 1st resist film, the 1st resist pattern phase used in the explanation for manufacturing the process of electronic device It distinguishes, the 1st resist film, the 1st resist pattern in above description etc. state the manufacturing process for illustrating photomask.
The photomask of the manufacturing method manufacture of photomask through the invention is that have following lit-par-lit structure for manufacturing Electronic device photomask, the lit-par-lit structure be laminated on the same substrate the 1st film is patterned made of the 1st Thinfilm pattern and the 2nd Thinfilm pattern made of being patterned to the 2nd film are obtained.The photomask has on the transparent substrate There is the 1st transfer pattern for being used to form the 1st Thinfilm pattern.The manufacturing method of photomask of the invention has following work Sequence: preparing the process of photomask blank, which is that semi-transparent film and screening have been sequentially formed on the transparent substrate Obtained from light film；And the 1st transfer use pattern formation process, by implementing respectively to the semi-transparent film and the photomask Photo-mask process and be patterned, formed it is described 1st transfer uses pattern.Herein, the 1st transfer has following shape with pattern, The shape is used to form the 1st Thinfilm pattern in the electronic device by exposure, and use when including the exposure The indicia patterns of line width that can not differentiate of exposure device.In photomask of the invention, which is characterized in that the shape be for The 2nd Thinfilm pattern in the formation electronic device and can be delimited by additional processing removal by the indicia patterns Described 1st transfer a part of pattern shape.
The manufacturing method of photomask through the invention can manufacture following photomask, in the photomask, the 1st transfer It is the shape comprising scheduled indicia patterns with pattern, and can be by additional processing removal as described in indicia patterns delimitation 1st transfer a part of pattern.By the system that the photomask is used for the above-mentioned electronic device comprising scheduled additional processing Method is made, can obtain reducing the manufacturing method of the electronic device of alignment error ingredient EM as caused by photomask.
In the manufacturing method of the photomask of each mode of the invention, it is preferred that the photomask blank is described It has been stacked gradually on transparent substrate obtained from the etching characteristic semi-transparent film and the photomask different from each other.Because institute Stating photomask blank is that the etching characteristic semi-transparent film different from each other and described has been stacked gradually on the transparent substrate Obtained from photomask, thus, it is possible to easily remove the 1st transfer figure delimited by indicia patterns by additional processing A part of case.
Etching characteristic is different from each other to be referred in the etching environment of a side, and another party has patience.Specifically, photomask With semi-transparent film preferably to mutual etchant (etching solution or etching gas) the indefatigable material of tool.
It can be used in the manufacturing method of the electronic device of the photomask and each mode of the invention of each mode of the invention Photomask in, when illustrating the material of specific semi-transparent film, in addition to Cr compound (oxide of Cr, nitride, carbonization Object, nitrogen oxides, carbon oxynitride etc.), Si compound (SiO2, SOG), metal silicide (TaSi, MoSi, WSi or they Nitride, nitrogen oxides etc.) other than, the Ti compounds such as TiON also can be used.
Shading membrane material is in addition to can be used Cr Cr compound (oxide of Cr, nitride, carbide, nitrogen oxidation Object, carbon oxynitride etc.) except, Ta, Mo, W or their compound (including above-mentioned metal silicide) etc. can also be used.
Therefore, when considering the etching selectivity of each film, such as in semi-transparent film Si compound, metallic silicon have been used In the case where compound or Ti compound, shading membrane material is preferably the combination of Cr or Cr compound.Also it can be set in contrast Combination.
Photomask and semi-transparent film preferably in the state of stacking substantially impermeable overexposure light (optical density OD be 3 with On), but the difference of the purposes according to photomask, it can also be through a part (such as transmissivity≤20%) of exposure light.This Outside, in the present specification, photomask is not required have complete light-proofness.Preferably, and the stacking with light-transmissive film As optical density OD3 or more.It is further preferred that only the optical density OD of photomask is 3 or more.Such as in the representative for setting exposure wavelength When wavelength is g line, OD can be the optical density that wavelength is represented for this.
As semi-transparent film, it is preferred to use exposure light transmission be 20~80%, more preferably 30~70% it is semi-transparent Film, it is preferred to use phase-shift phase is 90 degree or less, is more preferably 60 degree of semi-transparent films below.Exposure light transmission herein be The transmissivity of semi-transparent film when if the transmissivity of transparent substrate is 100%, which be can be for used in exposure The transmissivity of the representative wavelength of light.The phase-shift phase of semi-transparent film is the light through transparent substrate and penetrates the light of semi-transparent film each other Phase difference.If indicated with radian, phase-shift phase is that " 90 degree or less " refer to that above-mentioned phase difference is " (2n-1/2) π~(2n+ 1/2) π (n is integer here) ".
As light is exposed used in transfer, preferably include i line, h line, g line wave band exposure light.By This can also not reduce production efficiency even if the area of transfer printing body is larger (such as being on one side the rectangular etc. of 300mm or more) In the case where be exposed.The representative wavelength of above-mentioned exposure light can be i line, h line, any one in g line, such as can be set as G line.Preferably, for any one in i line, h line, g line, above-mentioned transmissivity and phase-shift phase are all enough sufficiently.
Well known etchant can be used in the etchant (etching solution or etching gas) used each membrane material.Containing Cr or It, can in the case where film (such as there is the Cr photomask of antireflection layer etc. realized by Cr compound on surface) of Cr compound The etching solution well known, comprising ammonium ceric nitrate used as chromium etchant.In addition, can also be to containing Cr or Cr compound Film using chlorine system gas dry ecthing.
Also, it for the film of MoSi or its compound, may be used in the fluorides such as hydrofluoric acid, fluosilicic acid, ammonium acid fluoride Etching solution added with oxidants such as hydrogen peroxide, nitric acid, sulfuric acid.Alternatively, fluorine can also be used to the film of MoSi or its compound The etching gas of system.
In addition, in the process of etching removal pattern, preferably making in the case where foring pattern using these membrane materials Use wet etching.Moreover, all using wet etching more preferably in all etching work procedures.
Then, workable photomask in the manufacturing method of electronic device of the invention is illustrated.Light of the invention Mask is the photomask for manufacturing the electronic device with following lit-par-lit structure, and the lit-par-lit structure is on the same substrate 2nd Thinfilm pattern made of the 1st Thinfilm pattern made of being patterned to the 1st film has been laminated and has been patterned to the 2nd film It is obtained.Photomask of the invention has the 1st transfer pattern on the transparent substrate, and the 1st transfer is to institute's shape with pattern At semi-transparent film and photomask difference composition made of, be used to form the 1st Thinfilm pattern.Herein, the 1st transfer is used Pattern has following shape, which is used to be formed the 1st Thinfilm pattern of the electronic device by exposure, and includes The indicia patterns for the line width that the exposure device used when the exposure can not be differentiated.Photomask of the invention is characterized in that, energy A part of enough the 1st transfer patterns delimited by additional processing removal by the indicia patterns, is used for shape to become At the 2nd transfer pattern of the 2nd Thinfilm pattern of the electronic device.Because photomask of the invention can pass through addition A part of pattern is used in processing removal the 1st transfer, therefore is suitable for inclusion in this hair of the additional processing of the 1st transfer pattern The manufacturing method of bright electronic device.
The 2nd transfer pattern preferably have by semi light transmitting part round transmittance section, by light shielding part round transmittance section, By light shielding part round semi light transmitting part, by semi light transmitting part round light shielding part, by transmittance section round light shielding part, enclosed by transmittance section Semi light transmitting part in any one.The 2nd transfer that addition through the invention is processed into is by removal the 1st with pattern A part of transfer pattern and form pattern as described above.
The indicia patterns are preferably by 0.3 μm~1.5 μm of a part of the light shielding part round the 1st transfer pattern The semi light transmitting part of width or transmittance section are constituted, and are preferably made of the semi light transmitting part of 0.3 μm~1.0 μm width or transmittance section.Institute State indicia patterns line width it is excessive when, can generate can tell the line width of the indicia patterns and turned in the 1st exposure The unfavorable condition of print.On the other hand, when the line width of the indicia patterns is too small, the required description process in additional processing In, it is difficult to absorb and have been formed in the alignment error between the 1st transfer pattern on photomask.Because of the line of indicia patterns Width is preset width as described above, and thus, it is possible to avoid unfavorable condition and difficulty.In addition, in indicia patterns by being pressed from both sides by light shielding part Semi light transmitting part constitute in the case where, the 1st exposure when be difficult to differentiate, thus more preferably.
Present invention can apply to use the manufacturing method of the display device of the manufacturing method of electronic device of the invention. " display device " includes liquid crystal display device (LCD), plasma display (PDP), organic EL display device etc..According to the present invention The manufacturing method of electronic device can accurately form transistor, two poles by the way that various conductive films and insulating film is laminated The electronic devices such as the elements such as pipe, capacitor, resistance or wiring.These electronic devices are applied to the semiconductors such as integrated circuit, liquid Crystal device, organic EL display device, plasma display etc..Therefore, the manufacturing method of electronic device of the invention is suitble to It is used when manufacture has the display device of these electronic devices.
In addition, in display device (including liquid crystal display device, plasma display, organic EL display device), with The imperceptibility of pattern, the trend and the increased trend of stacking number for arranging fine pattern to high-density in small area become aobvious It writes.In such a case, the meaning of the present invention industrially is increasing.
[embodiment]
<embodiment 1>
Fig. 1 shows a mode of the photomask that can be used in the manufacturing method of the electronic device of the embodiment of the present invention 1. The 1st transfer comprising transmittance section 11, semi light transmitting part 12, light shielding part 13 that (a) of Fig. 1 vertical view illustrates the photomask and has is used Pattern, (b) of Fig. 1 show the section in the chain-dotted line portion in (a).
Preparation has sequentially formed photomask blank obtained from semi-transparent film 20 and photomask on the transparent substrate 10, passes through Photo-mask process is patterned the semi-transparent film 20 and photomask to form photomask shown in FIG. 1 respectively.Therefore, transparent base Plate 10 exposes at transmittance section 11, and semi light transmitting part 12 is to be formed made of semi-transparent film figure 21 on the transparent substrate 10, shading Portion 13 is made of the semi-transparent film figure 21 of stacking and shading film figure 31.
In addition, the lamination order of semi-transparent film 20 and photomask may be reversed.In this case, can be transparent to being formed in After photomask on substrate 10 is patterned, forms semi-transparent film 20 and manufacture photomask of the invention to its composition.
Photomask applied to photomask of the invention can have the antireflection layer that function is prevented with reflection on surface. It is also the same such below in an example.
It herein, can be using the quartz glass substrate ground to surface as the transparent substrate 10 for constituting photomask Plate etc..The size of transparent substrate 10 is not particularly limited, can (such as plate is aobvious according to the substrate for using the mask to be exposed Show device substrate etc.) it is appropriate selected.As transparent substrate 10, for example, by using the rectangular substrate of one side 300mm or more.
In addition, having used using Cr as material in the photomask for embodiment 1 and being provided with Cr oxide on surface Antireflection layer film as photomask, in addition, having used MoSi as the material of semi-transparent film 20.That is, photomask and half Light-transmissive film 20 has etching selectivity each other, and for the etchant (etching solution or etching gas) of the film of a side, another party has resistance to Property, this is suitable for the manufacture of the photomask of Fig. 1.In the case where not having etching selectivity each other, can be arranged between two kinds of films Etch barrier film.
(c) of Fig. 1, which is shown, to be placed into exposure device for photomask of the invention shown in (a) of Fig. 1 and has irradiated exposure Transmission light quantity distribution on chain-dotted line shown in light time, Fig. 1 (a).Resist film on transfer printing body is by according to this point The irradiation of the light quantity of cloth.Horizontal dotted line shown in (c) of Fig. 1 indicates the photosensitive threshold value that anticorrosive additive material has.With Under example in it is also the same so.
Hereinafter, being illustrated using process of the FIG. 1 to FIG. 4 to the electronic device using photomask manufacture embodiment 1.
Fig. 2 shows the 1st Thinfilm pattern formation process carried out on transfer printing body.Herein, in the TFT for display device In array, the layer, the contact hole 90 with the layer of source/drain that form connection pixel electrode (referring to (c) of Fig. 4).But this hair It is bright to be not limited to the purposes, in the wiring of multi-ply construction, it can be applied to the contact hole 90 of connection upper layer side and lower layer side.
The contact hole 90 can have 1.5 μm~5 μm or so of diameter, here, with 2.5 μm of diameter in obtained electricity Aperture in the insulating layer (such as passivation layer) of sub- device, is consequently formed the contact hole 90.In addition, being designed in source/drain There is the generally square interconnecting piece that one side is 7 μm and the wiring portion with interconnecting piece connection, in interconnecting piece center in layer Configure above-mentioned contact hole 90.In addition, when the size of interconnecting piece is in the range substantially with 3 μm~10 μm or so one side, Significant effect of the invention.
As shown in (a) of Fig. 2, first in the 1st film being formed on substrate 50 (following to be also referred to as " device substrate 50 ") The 1st resist film 40a is formed on 60.1st resist film 40a is positive corrosion-resisting agent.Then, using photomask shown in FIG. 1 1st resist film 40a is exposed, pattern is used in the 1st transfer of transfer.As the exposure device for exposure, LCD has been used Exposure device, and used the light source comprising i line~g line wave band.Then, the development of the 1st resist film 40a has been carried out ((b-2) sectional view of (b-1) top view of Fig. 2, Fig. 2).Here, in region corresponding with the semi light transmitting part 12 of photomask and In region corresponding with light shielding part 13, the different resist pattern 41a of resist residual film value can be obtained.Then, this is against corrosion Agent pattern 41a is etched ((c) of Fig. 2) to the 1st film 60 as etching mask.That is, only leaving the portion for remaining resist Divide and remove the 1st film 60, to form the 1st Thinfilm pattern 61.1st Thinfilm pattern 61, which has, includes obtained electricity The shape of the interconnecting piece of sub- device.((d-1) top view of Fig. 2, (d-2) of Fig. 2 are cut the 1st resist pattern 41a of removing removal Face figure).
Then, the 2nd film 70 is formed in the entire surface of the device substrate 50 comprising obtained 1st Thinfilm pattern 61 ((a-2) sectional view of (a-1) top view of Fig. 4, Fig. 4).And herein, thin using the 2nd of the material of photonasty (negativity) the Film 70b is as the 2nd film 70.
Then, the 2nd film 70b is patterned, forms the 2nd Thinfilm pattern 71b.That is, using the photomask of Fig. 3 (with Fig. 1 Photomask be same photomask) by the 1st transfer pattern exposure to above-mentioned 2nd film 70b.Used exposure device can It is identical as above-mentioned exposure device.Moreover, light quantity is adjusted as shown in (b-1) of Fig. 4 and (b-2) of Fig. 4, so that with The 2nd film 70b in the corresponding region of light shielding part 13 of photomask becomes blank pattern (order I パ タ ー Application).It is thin the 2nd as a result, The 2nd Thinfilm pattern 71b (contact hole pattern) of fine diameter (1.5 μm~5 μm or so) is formd in film 70b.
It should be noted that the case where the 2nd film 70 is photonasty (negativity) is explained above, but photosensitive by not having Property material constitute the 2nd film 70 in the case where, the 2nd resist film (negativity) can also be formed on the 2nd film 70, right After 2nd resist film is patterned, the 2nd film is etched using obtained resist pattern as mask, thus shape At the 2nd Thinfilm pattern.
From the foregoing it may be appreciated that although the composition of the 1st film 60 and the 2nd film 70 to be used to form shape different from each other The composition of pattern, but used same photomask.Although that is, being double exposed using same transfer with pattern, by making The condition of its film formation process is different, can form the pattern and sectional hole patterns of contact portion on different layers.
Herein, it is contemplated that there are its manufacturing processes (specifically describing process) in the 1st transfer pattern of photomask The case where description deviation ingredient of middle generation.That is, sometimes, the 1st transfer with pattern with its describe the data shown in, in ideal coordinates The two-dimensional pattern of upper expansion is not quite identical.But even if at the arbitrary coordinate on the 1st transfer pattern exist with it is imaginary The deviation ingredient of ideal coordinates, in the 1st Thinfilm pattern 61 and the 2nd Thinfilm pattern 71, which is only generated to the same direction Same amount of deviation, therefore coincidence deviation is not generated between each other at it.
In addition, the 1st transfer with pattern be have light shielding part 13, semi light transmitting part 12, transmittance section 11 mask, and its system It makes and needs to describe twice in process.Describe in process twice at this, it is expected that inhibiting the pattern to be described (specifically semi-transparent Light film figure 21 and shading film figure 31) coincidence deviation is generated each other.I.e. it is desired to delimit semi-transparent portion by 1 description process 12, the edge of light shielding part 13.The manufacturing method of such photomask can be illustrated below.
By the above method, the high electricity of the registration accuracy of the 1st Thinfilm pattern 61 and the 2nd Thinfilm pattern 71 can be produced Sub- device ((c) of Fig. 4).
<embodiment 2>
In example 2, similarly to Example 1, the structure of the 1st film 60 and the 2nd film 70 is carried out using same photomask Figure, to form electronic device same as Example 1.But the shape for the 1st transfer pattern having about photomask, And it is formed in the photonasty of the 1st resist and the 2nd film 70 on transfer printing body, it is different from embodiment 1.
As the 1st transfer pattern of photomask used herein, using the 1st transfer shown in fig. 5 with pattern (its with it is rear The photomask of the Fig. 7 stated is same photomask).(a) of Fig. 5 is top view, and (b) of Fig. 5 is sectional view, and (c) of Fig. 5 shows exposure The transmission light quantity of light light is distributed.
Same as the photomask of embodiment 1, preparation has sequentially formed semi-transparent film 20 and photomask on the transparent substrate 10 Obtained from photomask blank, the semi-transparent film 20 and photomask are patterned to forming Fig. 7 respectively by photo-mask process Shown in photomask.Therefore, transparent substrate 10 exposes at transmittance section 11, and semi light transmitting part 12 is to form half on the transparent substrate 10 Made of light transmission film figure 21, light shielding part 13 is made of the semi-transparent film figure 21 of stacking and shading film figure 31.
In addition, the lamination order of semi-transparent film 20 and photomask may be reversed, this is same as Example 1.Photomask and The material of semi-transparent film 20 is also set as same as Example 1.
It is illustrated using process of Fig. 5~Fig. 8 to the electronic device using photomask manufacture embodiment 2.Wanted shape At the 1st Thinfilm pattern 61 and the 2nd Thinfilm pattern 71 it is same as Example 1.In addition, being omitted and embodiment 1 sometimes in process Identical part and recorded.
Fig. 6 shows the 1st Thinfilm pattern formation process carried out on transfer printing body.
As shown in (a) of Fig. 6, the 1st resist film 40b is formed first on the 1st film 60 being formed on substrate 50.It should 1st resist film 40b is negative resist.Then, 1st resist film 40b is exposed using photomask shown in fig. 5 Pattern is used in light, the 1st transfer of transfer.Exposure device is same as Example 1.
Then, the development ((b-2) sectional view of (b-1) top view of Fig. 6, Fig. 6) of the 1st resist film 40b has been carried out. Here, and the corresponding region of semi light transmitting part 12 and region corresponding with transmittance section 11 of photomask in, obtain resist residual film It is worth the 1st different resist pattern 41b.Then, the 1st film 60 is carried out using the 1st resist pattern 41b as etching mask It etches ((c) of Fig. 6).That is, only leaving the part for remaining resist and removing the 1st film 60, to form the 1st Thinfilm pattern 61.1st Thinfilm pattern 61 has the shape of the interconnecting piece comprising obtained electronic device.Removing the 1st resist of removal Pattern 41b ((d-2) sectional view of (d-1) top view of Fig. 6, Fig. 6).
Then, the 2nd film 70 is formed in the entire surface of the device substrate 50 comprising obtained 1st Thinfilm pattern 61 ((a-2) sectional view of (a-1) top view of Fig. 8, Fig. 8).And herein, the 2nd of the material of photonasty (positivity) has been used Film 70a is as the 2nd film 70.
Then, the 2nd film 70a is patterned, forms the 2nd Thinfilm pattern 71a.That is, using the photomask of Fig. 7 (with Fig. 5 Photomask be same photomask) by the 1st transfer pattern exposure to above-mentioned 2nd film 70a.Used exposure device with Above-mentioned exposure device is identical.Moreover, as shown in (b-1) of Fig. 8 and (b-2) of Fig. 8, it is corresponding with the light shielding part 13 of photomask The 2nd film 70a in region becomes blank pattern.
In addition, similarly to Example 1, it, can also if the 2nd film 70 is that do not have photosensitive material in above-mentioned narration It will be obtained against corrosion after being patterned to the 2nd resist film to form the 2nd resist film (positivity) on the 2nd film Agent pattern is etched the 2nd film as mask, to form the 2nd Thinfilm pattern.
From the foregoing it may be appreciated that in example 2, although the composition of the 1st film 60 and the 2nd film 70a are also for shape The composition of forming shape pattern different from each other, but also use same photomask.Therefore, the 1st Thinfilm pattern 61 can be produced The electronic device ((c) of Fig. 8) high with the registration accuracy of the 2nd Thinfilm pattern 71a.
< reference example >
In addition, the photomask used in above-described embodiment 1 and embodiment 2 is that have comprising light shielding part 13, semi light transmitting part 12 and transmittance section 11 pattern ((a) reference of (a) referring to Fig.1, Fig. 5), the so-called multi-gray scale photomas of transfer.It is making During making such photomask, as mentioned above, respectively to semi-transparent film and the photomask being formed on substrate Implement composition using photo-mask process.But it in the description process of the Twi-lithography, if producing position deviation, deposits There is the risk of alignment error ingredient EM in photomask itself.
About this point, the inventors discovered that can produce and not generated in Twi-lithography process by the following method The multi-gray scale photomas of mutual position deviation.
The mask manufacture method 1 for being not aligned with error is the manufacturing method with the photomask of following transfer pattern, should Transfer is that the lower membrane and upper layer film difference mutually different to exposure light transmission is arranged with being laminated on the transparent substrate with pattern Lower layer's film figure and upper layer film figure made of being patterned are obtained, and the manufacturing method of the photomask is characterized in that, tool There is following process:
Prepare the process of photomask blank, which is that stacking is etched by having each other on the transparent substrate The lower membrane of the material composition of selectivity and the upper layer film form obtained from the 1st resist film in turn；
It is described by carrying out the 1st process described to form the 1st resist pattern to the 1st resist film 1st resist pattern is used to form the upper layer film figure and delimit the tentative pattern in the region of lower layer's film figure；
1st resist pattern is etched the upper layer film as mask by the 1st etching work procedure；
The 2nd resist film is formed in the entire surface comprising being formed by the upper layer film figure and the tentative pattern Process；
It is described by carrying out the 2nd process described to form the 2nd resist pattern to the 2nd resist film 2nd time resist pattern is used to form lower layer's film figure；
2nd etching work procedure, using the tentative pattern and the 2nd resist pattern etched as mask it is described under Tunic；And
2nd resist pattern is etched the removal tentative pattern as mask by the 3rd etching work procedure.
More specifically, the above-mentioned mask manufacture method 1 for being not aligned with error can be used as the following error that is not aligned with Mask manufacture method 2.
The mask manufacture method 2 for being not aligned with error is that have to use comprising light shielding part, semi light transmitting part and the transfer of transmittance section The manufacturing method of the photomask of pattern, which is characterized in that with the following process:
Prepare the process of photomask blank, which be laminated on the transparent substrate by having etching selection each other Property the semi-transparent film that constitutes of material and photomask, and then form obtained from the 1st resist film；
It is described by carrying out the 1st process described to form the 1st resist pattern to the 1st resist film 1st resist pattern is used to form the light shielding part and delimit the tentative pattern of the semi light transmitting part；
1st resist pattern is etched the photomask as mask by the 1st etching work procedure；
The work of the 2nd resist film is formed in the entire surface comprising being formed by the light shielding part and the tentative pattern Sequence；
It is described by carrying out the 2nd process described to form the 2nd resist pattern to the 2nd resist film 2nd time resist pattern is used to form the semi light transmitting part；
The tentative pattern and the 2nd resist pattern are etched described half as mask by the 2nd etching work procedure Light-transmissive film；And
2nd resist pattern is etched the removal tentative pattern as mask by the 3rd etching work procedure.
In above-mentioned two method (mask manufacture method (1) and (2) that are not aligned with error), preferably further it is following that Sample is constituted.I.e., which is characterized in that
(1) in the 2nd resist pattern formation process, so that a part of the tentative pattern is from the described 2nd The mode that the edge of secondary resist pattern exposes carries out the 2nd description, in the etching removing step of the tentative pattern In, wet etching is implemented to the tentative pattern for the state for exposing a part from the edge of the 2nd resist pattern.
(2) making the width of the tentative pattern becomes 2 μm or less.
(3) the transfer pattern is made to become sectional hole patterns or dot pattern.
(4) in the 2nd resist pattern formation process, so that the tentative pattern is located at the transmittance section side Edge in such a way that 0.1~1.0 μm of width exposes, carry out the 2nd description.
It is illustrated using embodiment of the Figure 19 and Figure 20 to the manufacturing method of such photomask.
Here, can by photomask to be formed transfer with pattern be set as Figure 21 shown in transfer pattern.In order to comment Whether valence produces the mutual of the light shielding part that transfer pattern is included and semi light transmitting part (result is certainly also comprising transmittance section) Alignment error, the size of D1, D2 shown in Figure 21 can be used to be determined.In following reference implementation modes, show The method that pattern is used in the transfer of (A) of Figure 21 therein is manufactured in the case where not generating alignment error, i.e. manufacture has by light transmission Portion round semi light transmitting part and by semi light transmitting part round light shielding part transfer pattern method.
In Figure 19 and Figure 20, using formed semi light transmitting part as lower layer's film figure, form light shielding part as upper layer film figure In case where be illustrated.In addition, showing top view in Figure 19, Tu20Zhong, and in upside, downside shows its sectional view. Moreover, being carried out in a manner of it can have an X-rayed the photomask for being hidden in lower section in the case where resist film is in top layer It is schematical to describe.
Firstly, carrying out the be patterned to photomask the 1st as shown in (C) of (A)~Figure 19 of Figure 19 and (D) of Figure 20 Secondary photo-mask process.
In Figure 19, prepares to stack gradually semi-transparent film and photomask on the transparent substrate first and then be formed on Photomask blank (9 (A) referring to Fig.1) 1st resist film (being made of positive corrosion-resisting agent) herein obtained from.Herein, Semi-transparent film and photomask have etching selectivity each other.That is, photomask has patience for the etchant of semi-transparent film, it is semi-transparent Light film has patience for the etchant of photomask.In addition, about specific material, can be set as it is stated that material.
Then, describe and develop by carrying out the 1st time, form the 1st resist pattern.1st time resist pattern is drawn Determine the region of light shielding part.Also, become semi light transmitting part region in, delimit the outer rim of semi light transmitting part, be used to form by hiding The part for the tentative pattern that light film is constituted is also contained in the 1st resist pattern (9 (B) referring to Fig.1).
The tentative pattern will be etched removal below in process.Preferably, excellent by the effect of isotropic etching Different wet etching is removed.Therefore, it is desirable to the width of tentative pattern is set as not needing in the removing step excessive Time in the case where the width of degree that is reliably removed.Specifically, it is preferable that being set as 2 μm of width below.
Moreover, the tentative pattern can absorb the width as describing deviation of the alignment amount caused by process twice.Therefore, it is desirable to It is determined according to the size of issuable deviation of the alignment.Therefore, it when the maximum value for setting deviation of the alignment is ± 0.5 μm, fixes tentatively The width of pattern is preferably 0.5 μm~2 μm, more preferably 0.5 μm~1.5 μm of width, further preferably 0.5 μm~1.0 μ m。
Also, as described above, the 1st resist pattern includes the portion for forming the part of light shielding part and forming tentative pattern Point, therefore, describing the data when determining to describe for the 1st time based on this.
As described above, the width (such as 2 μm or less) of tentative pattern is suitably determined according to the maximum value of deviation of the alignment, thus In the etching work procedure (the 3rd etching work procedure) for removing tentative pattern, excessive time and efforts is not needed, therefore can be realized The manufacture of efficient photomask.
Then, the 1st resist pattern is etched into photomask (the 1st etching) as etching mask.Herein, it delimit and hide The region in light portion, and the outer rim (9 (C) referring to Fig.1) for wanting the semi light transmitting part of composition later by fixing tentatively pattern delimitation.Then It enters Figure 20, removes the 1st resist pattern (referring to (D) of Figure 20).By the above process, photomask is patterned 1st time photo-mask process terminates.
Then, resist film is coated in the entire surface on substrate again (referring to (E) of Figure 20).Then, it carries out the 2nd time Describe and develop, form the 2nd resist pattern (referring to (F) of Figure 20).2nd time resist pattern makes as transmittance section Expose part.
2nd resist pattern is by different retouching from description process when forming above-mentioned 1st resist pattern Process formation is drawn, therefore cannot be formed in substantially with respect to the position deviation of the position of above-mentioned 1st resist pattern Zero.But according to the present invention, changed despite the presence of the alignment, also can in final transfer pattern to be formed, make It obtains and the deviation of design value becomes zero.
That is, the 2nd resist pattern exposes the region as transmittance section and cover the region as semi light transmitting part, this 2 times resist pattern is the following size: in the part as semi light transmitting part and the boundary of transmittance section, being reduced to semi light transmitting part side Predetermined allowance size (such as 0.1 μm~1.0 μm, more preferably 0.2 μm~0.8 μm) corresponding with the width of tentative pattern.That is, Retreat the edge of resist pattern to semi light transmitting part side (left side in the section J-J of (F) of Figure 20).Therefore, above-mentioned tentative Slightly expose (ginseng from the edge of the 2nd resist pattern in the edge (or side of at least transmittance section side) of the transmittance section side of pattern According to (F) of Figure 20).
Therefore, describing the data in view of this point is used when describing for the 2nd time.For example, can be by making resist pattern The design of the edge width midway that is located at tentative pattern form the 2nd resist pattern.
As a result, by revealing the edge of the transmittance section side of tentative pattern with the width for making a reservation for (such as 0.1 μm~1.0 μm) Out, the deviation of the alignment between different photo-mask process can reliably be absorbed, and in the etching work procedure (for removing tentative pattern 3 etching work procedures) in, do not need excessive time and efforts.
The edge of the transmittance section side of the tentative pattern is as the accurate outer of the semi light transmitting part delimited in the 1st etching work procedure The part of edge, therefore be used together using the part as etching mask with the 2nd resist pattern, use the etching of semi-transparent film Agent carries out the etching (the 2nd etching) (referring to (G) of Figure 20) of semi-transparent film.Herein, because tentative pattern is by photomask shape At, therefore will not disappear with the contact of the etchant of semi-transparent film.
Then, in the state of remaining the 2nd resist pattern, tentative pattern is removed using the etchant of photomask (the 3rd etching work procedure).In addition, the light shielding part formed is protected by the 2nd resist pattern, therefore in tentative pattern It is not damaged when removal.Herein, it is effective for carrying out lateral erosion from the side of tentative pattern, therefore does not preferably use dry corrosion The wet etching carved, and use the effect of isotropic etching excellent.Then, make tentative pattern loss.At this point, due to semi-transparent film There is patience for the etchant of photomask, therefore will not disappear (referring to (H) of Figure 20).Then, be finally peeled away the 2nd time it is against corrosion Agent pattern (referring to (I) of Figure 20).
As described above, identical as design by the photomask that process shown in Figure 19 and Figure 20 obtains, light shielding part is configured At the center of semi light transmitting part.That is, the side of the shading film figure formed in different description processes respectively and semi-transparent film figure Edge will not be generated deviates such previous unfavorable condition in X-direction, Y-direction, and becomes the position being consistent with design.
Even if producing the relative position deviation described with the 1st time in the 2nd description, also become tentative pattern from the 2nd The edge of secondary resist pattern exposes at least part of state.In other words, tentative pattern is sized to, even if In the case where producing above-mentioned relative position deviation, the side for also becoming tentative pattern is revealed from the edge of the 2nd resist pattern State out.Therefore, the outer rim of semi light transmitting part can be reliably delimited by tentative pattern, therefore can be realized and is resisted with the 1st time The configuration being consistent with design that erosion agent pattern is formed.Furthermore it is possible to protect light shielding part by the 2nd resist pattern, will not In the case where being had an impact due to etching selectivity to semi light transmitting part, etching removes tentative pattern (the 3rd etching work procedure), therefore The further photo-mask process for removing tentative pattern is not needed.In addition it is also possible to repeat photo-mask process, again to remove Tentative pattern.
As described above, in the present invention, being capable of providing the manufacturing method of following photomask: the photomask needs repeatedly to describe And there is transfer pattern, which can accurately carry out the alignment in each region possessed by transfer pattern with pattern, and It is able to suppress the implementation number of photo-mask process.
In addition, it is formed so that a part of tentative pattern is exposed from the edge of the 2nd resist pattern, it can be by wet The effect of isotropic etching possessed by etching removes all tentative patterns for the tentative pattern that a part is exposed.Cause This, can be reliably suppressed the implementation number of photo-mask process.
In the present invention, can the method documented by above-mentioned reference example formed documented by embodiment 1 and embodiment 2 Pattern is used in 1st transfer of multi-gray scale photomas.In this case, the 1st transfer pattern included light shielding part, semi light transmitting part side Edge delimited by the 1st description.Thereby, it is possible to provide the manufacturing method of the photomask with following transfer pattern, the transfer The alignment in each region possessed by transfer pattern can be accurately carried out with pattern, and be able to suppress the implementation of photo-mask process Number.
<embodiment 3>
Fig. 9 shows other modes of the invention, the photomask used in the process of the manufacture electronic device of embodiment 3 An example.
The photomask has the 1st transfer pattern, and the 1st transfer is obtained in the following way with pattern: being prepared Semi-transparent film 20 is formed on transparent substrate 10 and then forms photomask blank obtained from photomask, and structure is carried out to photomask Figure, thus obtains the 1st transfer pattern.Membrane material is same as Example 1.
1st transfer is used to form the 1st Thinfilm pattern 61 with pattern, forms the interconnecting piece in the layer of source/drain, another Aspect can be used to form the 2nd of the 2nd Thinfilm pattern 71 the by implementing to be process after forming the 1st Thinfilm pattern 61 Pattern is used in transfer.
There is light shielding part 13 and semi light transmitting part 12 in 1st transfer pattern.Also, it is formed in the region of the light shielding part 13 There is the semi light transmitting part 12 (indicia patterns 80) of the slit-shaped of subtle width (width is 1 μm herein), exists by the half of the slit-shaped Transmittance section 12 round light shielding part 13 ((b) sectional view of (a) top view of Fig. 9, Fig. 9).In this mode, slit-shaped is semi-transparent Light portion 12 has shape corresponding with the periphery of the contact hole pattern of obtained electronic device, is rendered as with 1 μm of width Round the quadrangle of the contact hole pattern.
Indicia patterns 80 are formed as semi light transmitting part, but can also be formed as transmittance section.The former is difficult into resolution, therefore more excellent Choosing.
Hereinafter, using Fig. 9~Figure 12 to manufactured using the photomask similarly to Example 1, the electronics device of embodiment 3 The process of part is illustrated.But difference from example 1 is that, to used in the 1st Thinfilm pattern formation process Photomask implements additional processing, and is used for the 2nd Thinfilm pattern formation process.
Figure 10 shows the 1st Thinfilm pattern formation process.As shown in (a) of Figure 10, first in the 1st be formed on substrate 50 The 1st resist film 40a is formed on film 60.1st resist film 40a is positive corrosion-resisting agent.Then, using light shown in Fig. 9 Mask is exposed the 1st resist film 40a, and pattern is used in the 1st transfer of transfer.Exposure device can be used same as Example 1 Exposure device, but the time for exposure is preferably extended into predetermined amount and increases the irradiate light quantity to photomask.Then, the 1st has been carried out The development ((b-2) sectional view of (b-1) top view of Figure 10, Figure 10) of resist film 40a.
Herein, due to increasing irradiate light quantity, thus the 1st resist in region corresponding with the semi light transmitting part of photomask 12 Film 40a is sufficiently photosensitive, and passes through development dissolution.On the other hand, the 1st resist film 40a shape in region corresponding with light shielding part 13 At the 1st resist pattern 41a for remaining scheduled residual film.Further, since the line width of 1 μm of width of semi light transmitting part 12 is to expose Therefore the limit of resolution of electro-optical device hereinafter, can not make the 1st resist film 40a subtract film, substantially without transfer substantially.
Then, ((c) of Figure 10) is etched to the 1st film 60 using the 1st resist pattern 41a as etching mask. That is, only leaving the part for remaining resist and removing the 1st film 60, to form the 1st Thinfilm pattern 61.1st film figure Case 61 has the shape of the interconnecting piece comprising obtained electronic device.The 1st resist pattern 41a of removing removal be (Figure 10's (d-1) (d-2) sectional view of top view, Figure 10).
Then, the 2nd film 70 is formed in the entire surface of the device substrate 50 comprising obtained 1st Thinfilm pattern 61 ((a-2) sectional view of (a-1) top view of Figure 12, Figure 12).And herein, using the 2nd of the material of photonasty (positivity) the Film 70a is as the 2nd film 70.
Then, the 2nd film 70a is patterned, forms the 2nd Thinfilm pattern 71a.At this point, real using the photomask to Fig. 9 The photomask of Figure 11 obtained from additional processing is applied.Addition processing removal is in the slit-shaped by being formed as subtle width Semi light transmitting part 12 round position at light shielding part 13, to be converted to transmittance section 11.That is, etching removal constitutes light shielding part 13 Photomask, around the light shielding part 13 by the semi light transmitting part 12 of slit-shaped round, and then etch removal expose here it is semi-transparent Light film 20.Then the transmittance section 11 for exposing transparent substrate 10 is formed.The transmittance section 11, which has, to be used to form in electronic device The shapes and sizes of sectional hole patterns.In addition, the details of additional processing technology will be described hereinafter.
By above-mentioned additional processing, the 1st transfer of the photomask of Fig. 9 is converted to the 2nd of the photomask of Figure 11 with pattern Pattern is used in transfer.It but, is side present in the 1st transfer pattern with the edge of the light shielding part 13 in pattern as the 2nd transfer Edge (also include the edge adjacent with the semi light transmitting part 12 of subtle width), therefore the edge of pattern that the 2nd transfer pattern has is (special It is not the edge of light shielding part 13) it is not the edge re-formed in above-mentioned conversion process.
When the 2nd transfer is transferred to above-mentioned 2nd film 70a with pattern, exposure identical with above-mentioned exposure device can be used Electro-optical device.Moreover, being adjusted to light quantity, as shown in (b-1) of Figure 12 and (b-2) of Figure 12 so that saturating with photomask The 2nd film 70a in the corresponding region in light portion 11 becomes blank pattern.The 2nd Thinfilm pattern 71a (contact hole pattern) is consequently formed.
In addition, the case where being above photonasty (positivity) to the 2nd film 70, is illustrated, but by not having photonasty Material constitute the 2nd film 70 in the case where, the 2nd resist film (positivity) can also be formed on the 2nd film 70 and carried out Photo-mask process, this puts identical as the 1st embodiment.
As shown in the above description, the composition of the 1st film 60 and the 2nd film 70 is to be used to form shape pattern different from each other Composition.Transfer pattern on photomask used in the composition is converted by additional processing, nevertheless, still The transfer is the transfer pattern only delimited by 1 photo-mask process (i.e. 1 time description process) with pattern.Therefore, even if light 1st transfer of mask contains the description deviation ingredient generated in its manufacturing process (describing process) with pattern, in the 1st film In pattern 61 and the 2nd Thinfilm pattern 71, ingredient is also identical, therefore will not generate the alignment error of coincidence.
As a result, it is possible to the electronic device that the registration accuracy for producing the 1st Thinfilm pattern 61 and the 2nd Thinfilm pattern 71 is high ((c) of Fig. 4).
<embodiment 4>
As embodiment 4, the additional processing of the photomask carried out in embodiment 3 is illustrated.
Figure 13 ((a-1) top view, (a-2) sectional view) is used in embodiment 3 with the 1st transfer pattern Photomask.After the 1st Thinfilm pattern formation process, needs to remove and be enclosed by the indicia patterns being made of the semi light transmitting part of subtle width Light shielding part 13 (also referred to as following removal pattern) photomask and semi-transparent film in its lower layer side.The process can be such as Lower progress.
Firstly, coating resist in the entire surface of the transparent substrate 10 comprising the 1st transfer pattern, additional processing is formed With resist film 45 ((b-2) sectional view of (b-1) top view of Figure 13, Figure 13).Then, described simultaneously using description machine Development, being consequently formed, which makes to remove pattern part, exposes and covers the addition processing resist pattern of light shielding part 13 in addition to this 46 ((c) of Figure 13).
And at this point, need reliably to cover the light shielding part 13 of the part other than removal pattern as depicting pattern.But It is, even if carrying out so that the marginal position of additional processing resist pattern 46 and the size of the light shielding part 13 other than removal pattern Consistent description, due to being to re-start to retouch on the same transparent substrate 10 of description that the 1st transfer pattern has been carried out It draws, therefore, the consistent risk of its marginal position inaccuracy is led to there is also the phase mutual deviation due to caused by being overlapped.If Marginal position generates deviation, then removes the light shielding part 13 (edge of the light shielding part 13 in the i.e. the 2nd transfer pattern) other than pattern It may partly expose from additional processing resist pattern 46, and be dissolved out in etching.
Therefore, adjustment describes the data so that additional processing to be formed be in the marginal position of resist pattern 46 In the region of the semi light transmitting part 12 of the slit-shaped of subtle width.In addition, the grid deviation as caused by description machine is up to 0.5 μm of left side The right side, so if the width that the semi light transmitting part 12 of subtle width is 1 μm, then can reliably make additional processing resist pattern 46 edge is located in the line width of the semi light transmitting part 12 (indicia patterns 80).In (c) of Figure 13, additional process with anti-is shown Lose the situation after agent pattern 46 enters distance d1 to the inside of the semi light transmitting part 12 of subtle width.
Therefore, it as describing the data, carries out expanding the edge of additional processing resist pattern 46 towards removal patterned side The size adjusting (additional 0.5 μm of alignment allowance) of 0.5 μm of exhibition.That is, being described as follows at the part: compared to the 2nd transfer With the size in the design of pattern, 0.5 μm is deviated to 12 side of semi light transmitting part of subtle width.
As a result, removal pattern reliably exposes from additional processing resist pattern 46, on the other hand, pattern is removed Light shielding part 13 (light shielding part 13 of the 2nd transfer pattern) in addition is reliably added the covering of processing resist pattern 46.
Furthermore, it is contemplated that the size for the grid deviation ingredient that description machine has determines the size of the size adjusting.Wherein, If the maximum value of grid deviation is ± X μm (such as ± 5 μm), adjustment size is set as X μm (such as 5 μm).Wherein, The size should be formed in the 1st transfer pattern, this, which is associated with, is set as 2X μm for the width of the semi light transmitting part 12 of subtle width.And It, can be close to the distinguishable line width of exposure device and when the width of the semi light transmitting part 12 is excessive.It therefore here, can be with as X It says and is preferably set to 0.3 μm~0.8 μm or so.
Then, will be formed by additional processing uses resist pattern 46 as etching mask, is etched to removal pattern It removes ((d) of Figure 13).Herein, using the etchant of shading membrane material (if shading membrane material is using Cr as principal component The etchant of Cr).
Then, the etching ((e) of Figure 13) for removing the semi-transparent film 20 exposed is carried out.For example, if semi-transparent Film 20 is using MoSi as principal component, then using the etchant of MoSi.At this time, it is preferred that do not remove the erosion in above-mentioned photomask Additional processing resist pattern 46 used in quarter changes etchant only in this case to remove semi-transparent film 20.
At this point, additional processing has been become larger with the edge of resist pattern 46 carries out above-mentioned size tune as shown in (e) of Figure 13 0.5 μm after whole, it is thus possible to generate the wind that some semi-transparent film 20 is remained in the transmittance section 11 of the 2nd transfer pattern Danger.But if the etch application wet etching to semi light transmitting part 12 passes through progress side as illustrated in (e) of Figure 13 Etching, semi-transparent film 20 are sufficiently etched.Moreover, can more reliably obtain contact hole pattern shape if carrying out overetch At light shielding part 13.Which imply that, it is possible to so that reducing this present invention of the alignment error of obtained electronic device Project reach higher level.
That is, as in Examples 1 to 3 verify as, if it is possible to so that the alignment error EM as caused by photomask at Dividing theoretically becomes zero, then the alignment error of finally obtained electronic device can be compressed to the journey that do not imagined in the past Degree.
<embodiment 5>
As embodiment 5, the another way of the additional processing of the photomask carried out in embodiment 3 is illustrated.
Figure 14 ((a-1) top view, (a-2) sectional view) is used in embodiment 3 with the 1st transfer pattern Photomask.After the 1st Thinfilm pattern formation process, needs to remove and be enclosed by the indicia patterns being made of the semi light transmitting part of subtle width Light shielding part 13 (following also referred to as " removal pattern ".) photomask and semi-transparent film in its lower layer side.The process It can carry out as follows.
Firstly, similarly to Example 4, being coated in the entire surface of the transparent substrate 10 comprising the 1st transfer pattern against corrosion Agent forms additional processing with resist film 45 ((b-2) sectional view of (b-1) top view of Figure 14, Figure 14).Then, with reality It is same to apply example 4, is described and is developed using description machine, being consequently formed, which makes to remove pattern part, exposes and cover in addition to this The addition processing of light shielding part 13 is with resist pattern 46 ((c) of Figure 14).
Then, similarly to Example 4, will be formed by additional processing uses resist pattern 46 as etching mask, to going ((d) of Figure 14) is removed it except pattern is etched.Herein, used the etchant of shading membrane material (if shading Membrane material is then the etchant of Cr using Cr as principal component).
In turn, in the additional processing of the photomask of embodiment 5, remove additional processing with resist pattern 46 (Figure 14's (e)).Then, semi-transparent film 20 is removed, partly with the transmittance section 11 formed in the 2nd transfer pattern.
Specifically, forming new addition processing resist film in the entire surface of photomask as shown in (f) of Figure 14 47, and described using description machine.The description is with carrying out the following size adjustment in data: making additional processing resist figure The edge of case 48 retreats 0.5 μm relative to the marginal position of the light shielding part 13 of the 2nd transfer pattern and (alignment allowance is cut down 0.5 μ M) ((g) of Figure 14).As a result, as shown in (g) of Figure 14, the edge of additional processing resist pattern 48 is from the side of light shielding part 13 Edge has retreated distance d2.If using resist pattern 48 as mask the addition processing formed in this way, double of light-transmissive film 20 into Row etching, then since the edge of the light shielding part 13 formed as the 1st transfer pattern plays a role as etching mask, because This only removes the semi-transparent film 20 in its lower layer side, to accurately form the sectional hole patterns in the 2nd transfer pattern.
That is, showing following method in embodiment 4 and embodiment 5: although increasing due to the adding processing of photomask Description process, but not the alignment error ingredient as caused by the pattern registration of photomask generated due to the new description (EM)。
<comparative example 1>
The method that electronic device same as Example 1 is manufactured using existing method is said using Figure 15 and Figure 16 It is bright.
(a) of Figure 15 is by well known method to forming the case where photomask on the transparent substrate 10 is patterned, It has the light shielding part 13 (the 1st transfer pattern) comprising interconnecting piece.The binary mask is set as mask A.
Interconnecting piece is formed on device substrate 50 using mask A first.That is, as shown in (a-1) of Figure 16, in device The 1st film 60 is formed on substrate 50, and then forms the 1st resist film 40a (positivity).Then, it using mask A, is filled by exposure It sets and the 1st transfer is exposed with pattern.Exposure device is same as the previously described embodiments.Then, such as (b-1) of Figure 16 and (b- 2) shown in, develop to the 1st resist film 40a, using obtained 1st resist pattern 41a as mask to the 1st film 60 It is etched ((c) of Figure 16).
After removing the 1st resist pattern 41a, the with interconnecting piece shown in (d-1) and (d-2) of Figure 16 is completed 1 Thinfilm pattern 61.
Then, the 2nd film 70a is formed in the entire surface of the device substrate 50 comprising above-mentioned 1st Thinfilm pattern 61.This 2 film 70a are made of the ((a- of (a-1) top view of Figure 18, Figure 18 the 2nd film 70a of the material with Positive photosensitive 2) sectional view).
Then, it using the 2nd mask (mask B) shown in Figure 17, is exposed by exposure device.Mask B is that have It is used to form the binary mask of the 2nd transfer pattern of sectional hole patterns.
When being developed after exposure, contact hole 90 ((c) of Figure 18) is formed on the 2nd film 70a.
But mask A and mask B are the photomasks formed in independent process respectively, even if using identical description Machine, the trend of the grid deviation generated in the photo-mask process carried out in the manufacture of each mask (especially description process) is not yet It is completely the same.In (c) of Figure 18, show produce Δ x in the x direction and produce in y-direction Δ y coordinate it is inclined The situation of difference.
For example, if the 1st transfer that mask A has is offset to+M μm relative to design coordinate with the arbitrary coordinate on pattern Position, mask B be offset to-M μm of position, then the alignment error generated when being overlapped is 2M μm.That is, with party's legal system In the electronic device produced, it is not avoided that the EM ingredient of the alignment error as caused by the coincidence of two patterns leads to electronic device The case where precision deteriorates ((c) of Figure 18).

Claims (5)

1. a kind of manufacturing method of photomask, which is used to manufacture the electronic device with following lit-par-lit structure, described Lit-par-lit structure be laminated on the same substrate the 1st film is patterned made of the 1st Thinfilm pattern and to the 2nd film into Obtained from 2nd Thinfilm pattern made of row composition, the manufacturing method of the photomask is characterized in that,
The photomask has the 1st transfer pattern for being used to form the 1st Thinfilm pattern on the transparent substrate,
The manufacturing method of the photomask is with the following process:
Prepare the process of photomask blank, which is that semi-transparent film and screening have been sequentially formed on the transparent substrate Obtained from light film；And
1st transfer pattern formation process forms described the according to the semi-transparent film and the photomask using photo-mask process 1 transfer pattern,
Wherein, the 1st transfer pattern has following shape, which is used to be formed in the electronic device by exposure 1st Thinfilm pattern, and the indicia patterns of line width that the exposure device that uses of while including the exposure can not be differentiated,
The shape be in order to form the 2nd Thinfilm pattern in the electronic device and can by additional processing removal by The shape of a part for the 1st transfer pattern that the indicia patterns delimited.
2. the manufacturing method of photomask according to claim 1, which is characterized in that
The photomask blank is that the etching characteristic semi-transparent film different from each other has been stacked gradually on the transparent substrate With made of the photomask.
3. a kind of photomask is used to manufacture the electronic device with following lit-par-lit structure, the lit-par-lit structure is same The 2nd is thin made of the 1st Thinfilm pattern made of being patterned to the 1st film has been laminated on substrate and has been patterned to the 2nd film Obtained from film figure, which is characterized in that,
The photomask has the 1st transfer pattern for being used to form the 1st Thinfilm pattern, the 1st transfer on the transparent substrate It is constituted with pattern by being formed by semi-transparent film and photomask,
1st transfer pattern has following shape, which is used to form the described 1st of the electronic device by exposure Thinfilm pattern, and the indicia patterns of line width that the exposure device that uses of while including the exposure can not be differentiated,
A part for the 1st transfer pattern that can be delimited by additional processing removal by the indicia patterns, to become It is used to form the 2nd transfer pattern of the 2nd Thinfilm pattern of the electronic device.
4. photomask according to claim 3, which is characterized in that
2nd transfer with pattern have by semi light transmitting part round transmittance section, by light shielding part round transmittance section, by light shielding part Round semi light transmitting part, by semi light transmitting part round light shielding part, by transmittance section round light shielding part, by transmittance section round it is semi-transparent Any one in light portion.
5. photomask according to claim 3 or 4, which is characterized in that
The indicia patterns by the light shielding part round the 1st transfer pattern a part, 0.3 μm~1.5 μm width Semi light transmitting part or transmittance section are constituted.
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